JP2010503238A5 - - Google Patents

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JP2010503238A5
JP2010503238A5 JP2009527564A JP2009527564A JP2010503238A5 JP 2010503238 A5 JP2010503238 A5 JP 2010503238A5 JP 2009527564 A JP2009527564 A JP 2009527564A JP 2009527564 A JP2009527564 A JP 2009527564A JP 2010503238 A5 JP2010503238 A5 JP 2010503238A5
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Priority claimed from PCT/US2007/077759 external-priority patent/WO2008030960A2/en
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デバイスにおける伸縮性コンポーネントであって、
第１の端部と、
第２の端部と、
前記第１の端部と前記第２の端部との間に配置された中心領域と
を備え、
当該伸縮性コンポーネントが基板によって支持され、
当該伸縮性コンポーネントの前記第１の端部及び前記第２の端部が、前記基板に接着されると共に、第１のデバイスコンポーネントを第２のデバイスコンポーネントに電気的に接続し、
当該伸縮性コンポーネントの前記中心領域の少なくとも一部分が、曲がり形態を持っており、この曲がり形態は、前記第１のデバイスコンポーネント及び前記第２のデバイスコンポーネントが互いに対して移動した時、電気的な接続を維持しつつデバイスの伸縮と曲げを可能とするように、湾曲されると共に、物理的に前記基板から分離されている、伸縮性コンポーネント。 An elastic component in the device,
A first end;
A second end;
A central region disposed between the first end and the second end;
The elastic component is supported by the substrate,
The first end and the second end of the stretchable component are bonded to the substrate and electrically connect the first device component to the second device component;
At least a portion of the central region of the stretchable component has a bend configuration that is electrically connected when the first device component and the second device component move relative to each other. A stretchable component that is curved and physically separated from the substrate so as to allow the device to stretch and bend while maintaining . 前記中心領域が、歪みを受けている、請求項１に記載の伸縮性コンポーネント。   The stretchable component of claim 1, wherein the central region is distorted. 前記中心領域が、弧形である、請求項１に記載の伸縮性コンポーネント。 The stretchable component of claim 1 , wherein the central region is arcuate. 当該伸縮性コンポーネントの前記中央領域が、約１００ｎｍ〜１ｍｍの範囲から選ばれた振幅を持っている、請求項３に記載の伸縮性コンポーネント。 The stretchable component of claim 3, wherein the central region of the stretchable component has an amplitude selected from a range of about 100 nm to 1 mm. 前記中心領域が、前記基板と物理的に接触していない複数の異なった湾曲部分領域を形成するように前記基板に接着された１つ又は複数の領域を備える、請求項１に記載の伸縮性コンポーネント。   The stretchability of claim 1, wherein the central region comprises one or more regions bonded to the substrate to form a plurality of different curved subregions that are not in physical contact with the substrate. component. 前記異なった湾曲部分領域の少なくとも１つの振幅が、他の湾曲部分領域の振幅と異なっている、請求項５に記載の伸縮性コンポーネント。 The stretchable component according to claim 5 , wherein the amplitude of at least one of the different curved partial areas is different from the amplitude of the other curved partial areas. 当該伸縮性コンポーネントが、１００ｎｍよりも大きい厚さを持っているリボン構造を備える、請求項１に記載の伸縮性コンポーネント。   The stretchable component of claim 1, wherein the stretchable component comprises a ribbon structure having a thickness greater than 100 nm. 前記リボン構造が、約３００ｎｍ〜１ｍｍの範囲内の厚さを有する、請求項７に記載の伸縮性コンポーネント。 The stretchable component of claim 7 , wherein the ribbon structure has a thickness in the range of about 300 nm to 1 mm. 金属、半導体、絶縁体、圧電性材料、強誘電性材料、磁気歪材料、電気歪材料、超伝導体、強磁性材料及び熱電気材料から成るグループから選ばれた１つ又は複数の材料を備える、請求項１に記載の伸縮性コンポーネント。   Comprising one or more materials selected from the group consisting of metals, semiconductors, insulators, piezoelectric materials, ferroelectric materials, magnetostrictive materials, electrostrictive materials, superconductors, ferromagnetic materials and thermoelectric materials The stretchable component according to claim 1. 電子デバイス、光学デバイス、光電子デバイス、機械デバイス、超小型電気機械デバイス、ナノ電気機械デバイス、超小型流体デバイス及び熱デバイスから成るグループから選ばれたデバイスのコンポーネントを備える、請求項１に記載の伸縮性コンポーネント。   The stretch of claim 1 comprising a component of a device selected from the group consisting of an electronic device, an optical device, an optoelectronic device, a mechanical device, a microelectromechanical device, a nanoelectromechanical device, a microfluidic device and a thermal device. Sex component. 前記曲がり形態によって与えられる前記中心領域の歪みのレベルに従って選択的に変化する少なくとも１つの電子特性、光学特性又は機械特性を持っている調整可能なデバイスコンポーネントである、請求項１０に記載の伸縮性コンポーネント。 11. A stretchable device according to claim 10 , which is an adjustable device component having at least one electronic, optical or mechanical property that selectively varies according to the level of distortion of the central region provided by the bend form. component. 電子デバイスの伸縮性相互接続構造であり、
前記相互接続構造が、前記電子デバイスの２以上のデバイスコンポーネント間の電気接続を確立し、さらに圧縮又は伸張が可能である、請求項１に記載の伸縮性コンポーネント。 A stretch interconnect structure for electronic devices,
The stretchable component of claim 1, wherein the interconnect structure establishes an electrical connection between two or more device components of the electronic device and is further compressible or stretchable. 前記相互接続構造が、３以上の相互接続が延びている中心領域ピークを備えるブリッジ形態を持っている、請求項１２に記載の伸縮性コンポーネント。 The stretchable component of claim 12 , wherein the interconnect structure has a bridge configuration with a central region peak from which three or more interconnects extend. 前記伸縮性相互接続構造が、前記第１の端部、前記第２の端部、又は前記第１と第２の端部の両方と電気的に接触している１つ又は複数のコンタクトパッドをさらに備える、請求項１２に記載の伸縮性コンポーネント。 One or more contact pads wherein the stretch interconnect structure is in electrical contact with the first end, the second end, or both the first and second ends. The stretchable component of claim 12 , further comprising: 前記デバイスコンポーネントの少なくとも１つが、前記コンタクトパッドと電気的に接触している、請求項１４に記載の相互接続。 The interconnect of claim 14 , wherein at least one of the device components is in electrical contact with the contact pad. 当該伸縮性コンポーネントが、電子デバイスの調整可能なデバイスコンポーネントであり、
前記調整可能なデバイスコンポーネントが、前記曲がり形態によって与えられる前記中心領域の歪みのレベルに従って選択的に変化する少なくとも１つの電子特性を持っている、請求項１に記載の伸縮性コンポーネント。 The stretchable component is an adjustable device component of an electronic device;
The stretchable component of claim 1, wherein the adjustable device component has at least one electronic property that selectively varies according to a level of distortion of the central region provided by the bend configuration. 前記少なくとも１つの電子特性が、電子移動度、共振周波数、コンダクタンス、及び抵抗から成るグループから選ばれる、請求項１６に記載の伸縮性コンポーネント。 The stretchable component of claim 16 , wherein the at least one electronic property is selected from the group consisting of electron mobility, resonant frequency, conductance, and resistance. 前記調整可能なデバイスコンポーネントが、トランジスタの半導体チャネルを備える、請求項１６に記載の伸縮性コンポーネント。 The stretchable component of claim 16 , wherein the tunable device component comprises a semiconductor channel of a transistor. 当該伸縮性コンポーネントが、光学デバイスの調整可能なデバイスコンポーネントであり、
前記調整可能なデバイスコンポーネントが、前記曲がり形態によって与えられる前記中心領域の歪みのレベルに従って選択的に変化する少なくとも１つの光学特性を持っている、請求項１に記載の伸縮性コンポーネント。 The stretchable component is an adjustable device component of an optical device;
The stretchable component of claim 1, wherein the adjustable device component has at least one optical property that selectively varies according to a level of distortion of the central region provided by the bend configuration. 前記少なくとも１つの光学特性が、前記調整可能なデバイスコンポーネントの屈折率又は前記中心領域の表面に対する電磁放射の入射ビームの入射角である、請求項１９に記載の伸縮性コンポーネント。 20. A stretchable component according to claim 19 , wherein the at least one optical property is a refractive index of the adjustable device component or an incident angle of an incident beam of electromagnetic radiation relative to a surface of the central region. 前記調整可能なデバイスコンポーネントが、導波路、光変調器、光スイッチ、又は光学フィルタを備える、請求項１９に記載の伸縮性コンポーネント。 The stretchable component of claim 19 , wherein the tunable device component comprises a waveguide, light modulator, optical switch, or optical filter. 当該伸縮性コンポーネントが、デバイスの調整可能なデバイスコンポーネントであり、前記調整可能なデバイスコンポーネントが、前記曲がり形態によって与えられる前記中心領域の歪みのレベルに従って選択的に変化する熱伝導率を持っている、請求項１に記載の伸縮性コンポーネント。   The stretchable component is a tunable device component of the device, and the tunable device component has a thermal conductivity that selectively varies according to the level of strain in the central region provided by the bend configuration. The stretchable component according to claim 1. 当該伸縮性コンポーネントが、デバイスの熱的分離コンポーネントであり、前記中心領域が前記基板と物理的に接触していない、請求項１に記載の伸縮性コンポーネント。   The stretchable component of claim 1, wherein the stretchable component is a thermal isolation component of a device and the central region is not in physical contact with the substrate. 前記中心領域が、前記基板と熱的に接触しておらず、前記中心領域が１つ又は複数のデバイスコンポーネントを支持し、もって、前記中心領域によって支持された前記１つ又は複数のデバイスコンポーネントの、前記基板から熱的に分離する、請求項２３に記載の伸縮性コンポーネント。 The central region is not in thermal contact with the substrate, the central region supports one or more device components, and thus the one or more device components supported by the central region; 24. The stretchable component of claim 23 , wherein the stretchable component is thermally separated from the substrate. 前記デバイスが、長波長撮像システムである、請求項２３に記載の伸縮性コンポーネント。 24. The stretchable component of claim 23 , wherein the device is a long wavelength imaging system. 当該伸縮性コンポーネントが、機械デバイスのアクチュエータであり、
前記中心領域が、湾曲し、さらに、前記伸縮性コンポーネントを圧縮又は伸張することによって、又は前記中心領域に電位を加えることによって、調節が可能な振幅を持っている、請求項１に記載の伸縮性コンポーネント。 The elastic component is an actuator of a mechanical device;
The stretch of claim 1, wherein the central region is curved and further has an adjustable amplitude by compressing or stretching the stretchable component or by applying an electrical potential to the central region. Sex component. 前記機械デバイスが、超小型電気機械デバイス、ナノ電気機械デバイス、及び超小型流体デバイスから成るグループから選ばれる、請求項２６に記載の伸縮性コンポーネント。 27. The stretchable component of claim 26 , wherein the mechanical device is selected from the group consisting of a microelectromechanical device, a nanoelectromechanical device, and a microfluidic device. 前記基板が、エラストマ材料を備える、請求項１に記載の伸縮性コンポーネント。   The stretchable component of claim 1, wherein the substrate comprises an elastomeric material. 電気伝導性及び前記デバイスコンポーネントとの電気的接触を維持しつつ２５％までの基板歪みを許容することができる、請求項１に記載の伸縮性コンポーネント。 The stretchable component of claim 1, wherein the substrate is capable of tolerating up to 25% substrate strain while maintaining electrical conductivity and electrical contact with the device component. 当該伸縮性コンポーネントの少なくとも一部分を埋め込む封入層をさらに備え、  An encapsulating layer that embeds at least a portion of the stretchable component;
前記封入層が前記基板により支持されている、請求項１に記載の伸縮性コンポーネント。  The stretchable component according to claim 1, wherein the encapsulating layer is supported by the substrate. 前記封入層がエラストマである、請求項３０に記載の伸縮性コンポーネント。  The stretchable component according to claim 30, wherein the encapsulation layer is an elastomer. 前記エラストマがポリ（ジメチルシロキサン）である、請求項３１に記載の伸縮性コンポーネント。  32. A stretchable component according to claim 31 wherein the elastomer is poly (dimethylsiloxane). 請求項１に記載の複数の伸縮性コンポーネントを備えるデバイスアレイ。   A device array comprising a plurality of stretchable components according to claim 1. 当該デバイスアレイが、グリッド形態、花模様形態、ブリッジ形態、又はこれらの任意の組合せを持っている、請求項３３に記載のデバイスアレイ。 34. The device array of claim 33 , wherein the device array has a grid shape, a flower pattern shape, a bridge shape, or any combination thereof. 各デバイスコンポーネントが、伸縮性相互接続構造を備える複数の伸縮性コンポーネントによって、隣接のデバイスコンポーネントに接続されている、請求項３３に記載のデバイスアレイ。 34. The device array of claim 33 , wherein each device component is connected to an adjacent device component by a plurality of elastic components comprising an elastic interconnect structure. 少なくとも１つの相互接続構造が、他の相互接続構造と異なる方向に向けられている、請求項３５に記載のデバイスアレイ。 36. The device array of claim 35 , wherein at least one interconnect structure is oriented in a different direction than other interconnect structures. 少なくとも一部分が、互いに平行な方向に並べられた複数の相互接続構造又は２以上の方向に方向付けされた複数の相互接続を備える、請求項３３に記載のデバイスアレイ。 34. The device array of claim 33 , wherein at least a portion comprises a plurality of interconnect structures arranged in a direction parallel to each other or a plurality of interconnects oriented in two or more directions. 前記複数の平行な相互接続の少なくとも１つは、前記相互接続の少なくとも１つの他のものと位相がずれている、請求項３７に記載のデバイスアレイ。 38. The device array of claim 37 , wherein at least one of the plurality of parallel interconnects is out of phase with at least one other of the interconnects. 前記デバイスが、２以上の隣接した層を備え、各層が複数の前記伸縮性コンポーネントを備えている、請求項３３に記載のデバイスアレイ。 34. The device array of claim 33 , wherein the device comprises two or more adjacent layers, each layer comprising a plurality of the stretchable components. 破損することなしに、約１５０％までの歪みを受けることができる、請求項３３に記載のデバイスアレイ。 35. The device array of claim 33 , wherein the device array is capable of undergoing up to about 150% strain without being damaged. 前記基板が、湾曲状、凹形、凸形又は半球形である部分を少なくとも含んだ表面を持っている、請求項３３に記載のデバイスアレイ。 34. The device array of claim 33 , wherein the substrate has a surface that includes at least a portion that is curved, concave, convex, or hemispherical. 前記デバイスが、１つ又は複数の伸縮性の光検出器、フォトダイオードアレイ、ディスプレイ、発光デバイス、光起電力デバイス、センサアレイ、薄板状スキャナ、ＬＥＤディスプレイ、半導体レーザアレイ、光撮像システム、大面積電子デバイス、トランジスタアレイ、論理ゲートアレイ、マイクロプロセッサ又は集積回路である、請求項３３に記載のデバイスアレイ。 The device includes one or more stretchable photodetectors, photodiode arrays, displays, light emitting devices, photovoltaic devices, sensor arrays, thin plate scanners, LED displays, semiconductor laser arrays, optical imaging systems, large areas 34. The device array of claim 33 , wherein the device array is an electronic device, transistor array, logic gate array, microprocessor, or integrated circuit. デバイスの伸縮性コンポーネントの特性を調整する方法であって、
前記伸縮性コンポーネントを持っている前記デバイスを設けるステップであり、前記伸縮性コンポーネントが、第１の端部と、第２の端部と、前記第１の端部と前記第２の端部との間に配置された中心領域とを備え、前記伸縮性コンポーネントが基板によって支持され、前記伸縮性コンポーネントの前記第１の端部及び前記第２の端部が前記基板に接着され、前記伸縮性コンポーネントの前記中心領域の少なくとも一部分が曲がり形態を持ち、前記中心部分があるレベルの歪みを受けているものである、ステップと、
前記伸縮性コンポーネントを圧縮又は伸張することによって、前記伸縮性コンポーネントの歪みの前記レベルを調節し、もって、前記デバイスの前記伸縮性コンポーネントの前記特性を調整するステップと
を含む方法。 A method for adjusting the properties of a stretchable component of a device,
Providing the device having the stretchable component, the stretchable component comprising: a first end; a second end; the first end; and the second end. A central region disposed between the elastic component, the elastic component is supported by a substrate, the first and second ends of the elastic component are bonded to the substrate, and the elastic property At least a portion of the central region of the component has a curved configuration and the central portion is subjected to a level of distortion;
Adjusting the level of distortion of the stretchable component by compressing or stretching the stretchable component, thereby adjusting the properties of the stretchable component of the device. デバイスの１つ又は複数の伸縮性コンポーネントを作製する方法であって、
受容表面を持っているエラストマ基板を設けるステップであり、前記基板が第１のレベルの歪みを受けている状態で設けられるステップと、
前記１つ又は複数のデバイスコンポーネントを、前記第１のレベルの歪みを受ける前記エラストマ基板の前記受容表面に接着するステップと、
前記第１のレベルから前記第１のレベルと異なる歪みの第２のレベルに前記基板の歪みのレベルの変化を引き起こす力を前記エラストマ基板に加えるステップと
を含み、
前記第１のレベルから前記第２のレベルへの前記基板の歪みのレベルの前記変化によって、前記１つ又は複数のコンポーネントを曲げ、もって、前記基板に接着された第１の端部及び第２の端部と、前記基板から物理的に分離された曲がり形態で生成された中心領域とを各々持っている前記１つ又は複数の伸縮性コンポーネントを生成する、方法。 A method of making one or more stretchable components of a device comprising:
Providing an elastomeric substrate having a receiving surface, the substrate being provided with a first level of strain;
Adhering the one or more device components to the receiving surface of the elastomer substrate subject to the first level of strain;
Applying a force to the elastomer substrate that causes a change in the level of strain of the substrate from the first level to a second level of strain different from the first level;
The change in the level of distortion of the substrate from the first level to the second level causes the one or more components to bend and thereby a first end bonded to the substrate and a second Generating the one or more stretchable components each having a central region generated in a bent form physically separated from the substrate . 前記接着するステップが、前記伸縮性コンポーネントの接着領域及び非接着領域のパターンを生成するステップを含み、前記伸縮性コンポーネントの前記接着領域が前記エラストマ基板に接着され、前記伸縮性コンポーネントの前記非接着領域が前記エラストマ基板に接着されない、請求項４４に記載の方法。 The bonding step includes generating a pattern of bonded and non-bonded areas of the stretchable component, wherein the bonded area of the stretchable component is bonded to the elastomer substrate and the non-bonded of the stretchable component 45. The method of claim 44 , wherein a region is not adhered to the elastomer substrate. 前記非接着領域が、前記伸縮性コンポーネントの前記中心領域に対応し、前記１つ又は複数のデバイスコンポーネントの前記第１及び第２の端部が、前記接着領域に対応する、請求項４５に記載の方法。 The non-adhesive region, corresponding to the central region of the stretchable components, said one or said first and second ends of the plurality of device components correspond to the bonding area, according to claim 45 the method of. 前記伸縮性コンポーネント又は前記エラストマ基板の前記受容表面上に、又は前記伸縮性コンポーネント上と前記エラストマ基板の前記受容表面上の両方に接着部位のパターンを生成するステップをさらに含む、請求項４４に記載の方法。 45. The method of claim 44 , further comprising generating a pattern of adhesive sites on the receiving surface of the stretchable component or the elastomer substrate, or on both the stretchable component and the receiving surface of the elastomer substrate. the method of. 前記エラストマ基板が、複数のコンプライアント領域及び複数の剛性領域を備え、前記コンプライアント領域の曲げ剛性が前記剛性領域のそれよりも小さく、前記伸縮性コンポーネントの各々の前記第１の端部及び前記第２の端部が前記剛性領域の少なくとも１つに接着され、さらに前記伸縮性コンポーネントの各々の前記中心領域が前記コンプライアント領域の少なくとも１つに接着される、請求項４４に記載の方法。 The elastomeric substrate comprises a plurality of compliant regions and a plurality of rigid regions, wherein the compliant region has a bending stiffness less than that of the rigid region, and the first end of each of the stretchable components and the 45. The method of claim 44 , wherein a second end is adhered to at least one of the rigid regions and the central region of each of the stretchable components is adhered to at least one of the compliant regions. 前記力を前記エラストマ基板に加える前記ステップが、機械的に実現される、請求項４４に記載の方法。 45. The method of claim 44 , wherein the step of applying the force to the elastomeric substrate is mechanically realized. 前記第１のレベルの歪み、前記第２のレベルの歪み、又は両方が、前記エラストマ基板を伸ばすか圧縮することによって生成される、請求項４９に記載の方法。 50. The method of claim 49 , wherein the first level of strain, the second level of strain, or both are generated by stretching or compressing the elastomer substrate. 前記第１のレベルの歪み、前記第２のレベルの歪み、又は両方が、前記エラストマ基板を硬化することによって生成される、請求項４４に記載の方法。 45. The method of claim 44 , wherein the first level of strain, the second level of strain, or both are generated by curing the elastomeric substrate. 前記力を前記エラストマ基板に加える前記ステップが、熱的に実現される、請求項４４に記載の方法。 45. The method of claim 44 , wherein the step of applying the force to the elastomeric substrate is accomplished thermally. 前記力を前記エラストマ基板に加える前記ステップが、前記エラストマ基板の温度を上げるか下げることによって実現される、請求項５２に記載の方法。 53. The method of claim 52 , wherein the step of applying the force to the elastomer substrate is accomplished by increasing or decreasing the temperature of the elastomer substrate. 前記第１のレベルの歪み、前記第２のレベルの歪み、又は両方が、前記エラストマ基板の熱膨張又は熱誘起収縮によって生成される、請求項４４に記載の方法。 45. The method of claim 44 , wherein the first level of strain, the second level of strain, or both are generated by thermal expansion or thermal induced contraction of the elastomer substrate. 前記第１のレベルの歪み又は前記第２のレベルの歪みが、０に等しい、請求項４４に記載の方法。 45. The method of claim 44 , wherein the first level distortion or the second level distortion is equal to zero. 前記第１のレベルから前記第１のレベルと異なる第２のレベルの歪みに前記基板の歪みのレベルの変化を引き起こす前記力を前記エラストマ基板に加える前記ステップの前に、前記１つ又は複数のデバイスコンポーネントを前記エラストマ基板の前記受容表面に接着する前記ステップが行われる、請求項４４に記載の方法。 Prior to the step of applying the force to the elastomeric substrate from the first level to a second level of strain different from the first level, causing the change in level of strain of the substrate, the one or more 45. The method of claim 44 , wherein the step of adhering a device component to the receiving surface of the elastomer substrate is performed. 前記第１のレベルから前記第１のレベルと異なる第２のレベルの歪みに前記基板の歪みのレベルの変化を引き起こす前記力を前記エラストマ基板に加える前記ステップの後で、前記１つ又は複数のデバイスコンポーネントを前記エラストマ基板の前記受容表面に接着する前記ステップが行われる、請求項４４に記載の方法。 After the step of applying the force to the elastomeric substrate from the first level to a second level of strain different from the first level, causing the change in level of strain of the substrate, the one or more 45. The method of claim 44 , wherein the step of adhering a device component to the receiving surface of the elastomer substrate is performed. ａ）１つ又は複数のレリーフ特徴の付いた受容表面を有する基板を設けるステップと、
ｂ）前記受容表面に少なくとも部分的に共形的に接触するようにデバイスコンポーネントを堆積させるステップと、
ｃ）前記少なくとも部分的に共形的に接触された基板に重合体スタンプを押し付けて成形するステップと、
ｄ）前記基板から前記重合体スタンプを取り除き、それによって、前記デバイスコンポーネントを前記スタンプに転写するステップと
を含む伸縮性デバイス又はデバイスコンポーネントを作製する方法であって、
前記スタンプに転写された前記デバイスコンポーネントが、前記デバイスコンポーネントを前記スタンプに接着する接着部位のパターンを持っている方法。 a) providing a substrate having a receiving surface with one or more relief features;
b) depositing a device component in at least partially conformal contact with the receiving surface;
c) pressing and molding a polymer stamp against the at least partially conformally contacted substrate;
d) removing the polymer stamp from the substrate, thereby transferring the device component to the stamp, the method of making a stretchable device or device component comprising:
The method wherein the device component transferred to the stamp has a pattern of adhesive sites that adheres the device component to the stamp. ａ）基板表面上にコンポーネントを設けるステップと、
ｂ）湾曲ジオメトリを持っているエラストマスタンプを設けるステップと、
ｃ）ｉ）実質的に平らなスタンプ表面を生成するように前記スタンプに変形力を加え、
ｉｉ）前記歪んだスタンプを前記基板上の前記コンポーネントと接触させ、
ｉｉｉ）前記基板から遠ざかる方向に前記スタンプを持ち上げることによって前記基板から前記コンポーネントを取り除き、もって、前記基板表面から前記エラストマスタンプ表面に前記コンポーネントを転写することによって、前記基板から前記スタンプに前記コンポーネントを転写するステップと、
ｄ）前記スタンプを前記湾曲ジオメトリに弛緩させるように前記変形力を取り除き、それによって、ポップアップコンポーネントを作るステップと
を含むスタンプ表面上にポップアップコンポーネントを作製する方法。 a) providing a component on the substrate surface;
b) providing an elastomeric stamp having a curved geometry;
c) i) applying a deforming force to the stamp to produce a substantially flat stamp surface;
ii) contacting the distorted stamp with the component on the substrate;
iii) removing the component from the substrate by lifting the stamp away from the substrate, thereby transferring the component from the substrate to the stamp by transferring the component from the substrate surface to the elastomeric stamp surface. A transcription step;
d) removing the deformation force to relax the stamp into the curved geometry, thereby creating a pop-up component on the stamp surface. 前記湾曲ジオメトリが、前記スタンプが弛緩されたとき少なくとも部分的に半球形である、請求項５９に記載の方法。 60. The method of claim 59 , wherein the curved geometry is at least partially hemispherical when the stamp is relaxed. 前記スタンプが、円形の周囲を持ち、さらに、前記変形力を加えている間に前記スタンプに半径方向の力を与えるために、前記円形周囲のまわりに成形リムをさらに備える、請求項６０に記載の方法。 61. The stamp of claim 60 , wherein the stamp has a circular perimeter and further comprises a molded rim around the circular perimeter to impart a radial force to the stamp while applying the deformation force. the method of. 前記ポップアップコンポーネントをデバイス基板上に転写するステップをさらに含み、前記転写するステップが、
ａ）前記スタンプの湾曲ジオメトリに対応する湾曲表面形状を持っているデバイス基板を設けること、
ｂ）接着剤又は接着剤先駆物質の液状膜層を前記デバイス基板表面上に生成するように前記デバイス基板湾曲表面に接着剤又は接着剤先駆物質を塗布すること、及び、
ｃ）前記ポップアップコンポーネントを持っている前記スタンプ表面を前記デバイス基板上の前記接着剤層と接触させること
を含み、前記接触と同時に、前記接着剤液状層を、前記ポップアップコンポーネントの形に適合し前記コンポーネントを前記デバイス基板に接着するように流動させる、請求項５９に記載の方法。 Transferring the pop-up component onto a device substrate, the transferring step comprising:
a) providing a device substrate having a curved surface shape corresponding to the curved geometry of the stamp;
b) applying an adhesive or adhesive precursor to the curved surface of the device substrate to produce a liquid film layer of adhesive or adhesive precursor on the surface of the device substrate; and
c) contacting the stamp surface having the pop-up component with the adhesive layer on the device substrate, and simultaneously with the contacting, the adhesive liquid layer is adapted to the shape of the pop-up component and 60. The method of claim 59 , wherein a component is flowed to adhere to the device substrate. 前記エラストマスタンプを取り除くステップをさらに含む、請求項６２に記載の方法。 64. The method of claim 62 , further comprising removing the elastomeric stamp. 前記接着剤が、光重合体を含み、前記光重合体接着剤層が、前記スタンプ表面とデバイス基板を接触させる前記ステップ中又は後に、電磁放射を当てることによって硬化される、請求項６２に記載の方法。 63. The adhesive of claim 62 , wherein the adhesive comprises a photopolymer, and the photopolymer adhesive layer is cured by applying electromagnetic radiation during or after the step of contacting the stamp surface with a device substrate. the method of. 前記スタンプが、約４０％までの歪みに対して直線弾性応答を持っているポリ（ジメチルシロキサン）を備える、請求項６２に記載の方法。 64. The method of claim 62 , wherein the stamp comprises poly (dimethylsiloxane) having a linear elastic response to strains up to about 40%. 前記コンポーネントが、伸縮性電極、伸縮性受動マトリックスＬＥＤディスプレイ、又は光検出器アレイの部分である、請求項６２に記載の方法。 64. The method of claim 62 , wherein the component is part of a stretchable electrode, a stretchable passive matrix LED display, or a photodetector array. ａ）基板上に半導体ナノメンブレン材料を設けるステップであって、前記材料の厚さが約４０ｎｍ〜６００ｎｍの範囲内であるステップと、
ｂ）エラストマ基板を設けるステップと、
ｃ）前記エラストマ基板の１つの表面を活性化するステップと、
ｄ）前記エラストマ基板に二軸歪みを加え、もって前記エラストマ基板を２方向に伸張させるステップと、
ｅ）前記活性化され伸張されたエラストマ基板を基板上の前記半導体材料と接触させるステップと、
ｆ）前記半導体を支持する前記基板から前記エラストマ基板を剥がし、もって前記半導体ナノメンブレンを前記エラストマ基板に転写するステップと、
ｇ）前記エラストマ基板の前記二軸歪みを緩和し、もって２次元波形構造を持つナノメンブレンを生成するステップと
を含む二軸伸縮性半導体メンブレンを作製する方法。 a) providing a semiconductor nanomembrane material on a substrate, wherein the thickness of the material is in the range of about 40 nm to 600 nm;
b) providing an elastomer substrate;
c) activating one surface of the elastomer substrate;
d) applying biaxial strain to the elastomer substrate, thereby extending the elastomer substrate in two directions;
e) contacting the activated stretched elastomer substrate with the semiconductor material on the substrate;
f) peeling the elastomer substrate from the substrate supporting the semiconductor, thereby transferring the semiconductor nanomembrane to the elastomer substrate;
g) Relieving the biaxial strain of the elastomer substrate, thereby producing a nanomembrane having a two-dimensional corrugated structure, and producing a biaxial stretchable semiconductor membrane. デバイスを作製する方法であって、
基板の受容表面で支持された１つ又は複数のデバイスコンポーネントが予めパターン形成されている前記基板を設けるステップと、
前記基板の前記受容表面又はその上に形成された１つ又は複数の構造上に印刷可能半導体要素を接触印刷することによって、複数の前記印刷可能半導体要素を前記基板上に組み立てるステップと
を含み、前記印刷可能半導体要素の少なくとも一部分が、前記基板で支持された１つ又は複数の前記デバイスコンポーネントと、又は両方と電気的に接触した状態で空間的に整列されるように位置付けされる方法。 A method of making a device comprising:
Providing the substrate pre-patterned with one or more device components supported on a receiving surface of the substrate;
Assembling a plurality of printable semiconductor elements on the substrate by contact printing the printable semiconductor elements on the receiving surface of the substrate or one or more structures formed thereon; A method wherein at least a portion of the printable semiconductor element is positioned to be spatially aligned in electrical contact with one or more of the device components supported by the substrate, or both. 前記印刷可能半導体要素の少なくとも一部分が、異種半導体要素を備える、請求項６８に記載の方法。 69. The method of claim 68 , wherein at least a portion of the printable semiconductor element comprises a heterogeneous semiconductor element. 多層デバイス構造を作製する方法であって、
基板の受容表面によって支持された１つ又は複数のデバイスコンポーネントが予めパターン形成されている基板を設けるステップと、
前記基板の前記受容表面又はその上に設けられた１つ又は複数の構造上に印刷可能半導体要素を接触印刷することによって、前記基板上に第１の組の前記印刷可能半導体要素を組み立て、もって第１のデバイス層を生成するステップと、
前記第１の組の印刷可能半導体要素上に中間層を設けるステップであって、前記中間層が受容表面を持っているステップと、
前記中間層の前記受容表面又はその上に設けられた１つ又は複数の構造上に印刷可能半導体要素を接触印刷することによって第２の組の前記印刷可能半導体要素を中間層上に組み立て、もって第２のデバイス層を生成するステップと
を含む方法。 A method for making a multilayer device structure comprising:
Providing a substrate pre-patterned with one or more device components supported by a receiving surface of the substrate;
Assembling a first set of the printable semiconductor elements on the substrate by contact printing the printable semiconductor elements on the receiving surface of the substrate or on one or more structures provided thereon; Generating a first device layer;
Providing an intermediate layer on the first set of printable semiconductor elements, the intermediate layer having a receiving surface;
Assembling a second set of the printable semiconductor elements on the intermediate layer by contact printing the printable semiconductor elements on the receiving surface of the intermediate layer or on one or more structures provided thereon; Generating a second device layer. ａ．接触表面を持っている基板と、
ｂ．前記基板の接触表面の少なくとも一部分に接着されたコンポーネントと、を備える２次元伸縮性且つ湾曲性デバイスであって、前記コンポーネントが、少なくとも１つのレリーフ特徴領域及び少なくとも１つの実質的に平らな領域を持ち、前記レリーフ特徴領域が、前記基板から分離された部分を持ち、前記実質的に平らな領域が前記基板に少なくとも部分的に接着されている２次元伸縮性且つ湾曲性デバイス。 a. A substrate having a contact surface;
b. A two-dimensional stretchable and bendable device comprising a component bonded to at least a portion of the contact surface of the substrate, the component comprising at least one relief feature region and at least one substantially flat region. A two-dimensional stretchable and bendable device, wherein the relief feature region has a portion separated from the substrate and the substantially flat region is at least partially bonded to the substrate.
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