JP2010287859A - 貫通電極を有する半導体チップ及びそれを用いた半導体装置 - Google Patents
貫通電極を有する半導体チップ及びそれを用いた半導体装置 Download PDFInfo
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Abstract
【解決手段】半導体チップの半導体基板の貫通電極として、少なくとも一つの信号用の第1の貫通電極(2)の周囲を囲んで、固定電位を有する第2の貫通電極(5)を複数配置した。また半導体装置は、上記構成の第1の半導体チップ(100)と、第1の半導体チップ(100)を電気的に接続した外部端子(13)を有する基板(10)と、少なくとも第1の半導体チップ(100)を覆う封止体(15/16)と、からなる。
【選択図】図1
Description
図1は、本発明の実施例1のCoC型の半導体装置に用いる半導体チップの概略構成を示す平面図であり、図2はそのA−A断面図である。
図3は、実施例1の半導体チップ100を積層搭載したCoC型の半導体装置200の概略構成を示す断面図である。
図4は、半導体チップ100の貫通電極の形成フローを示す断面図である。まず円盤状のSi基板からなり所定の回路が形成されたチップ形成領域を有する半導体ウエハ20が準備される。そして半導体ウエハ20のそれぞれのチップ形成領域の一面(図4では上面)側に、エッチング処理により、図4(a)に示すように複数の凹部21を形成する。
図6は、半導体チップの貫通電極の配置の実施例3〜5である半導体チップ300〜500を示す平面図である。図6(a)〜(c)に示すように、第2の貫通電極5は、信号用の第1の貫通電極2の周囲近傍で、電磁結合するように配置していれば、第1の貫通電極2の周囲に配置される第2の貫通電極5の配置数や配置はどのように構成しても良い。
図7は、実施例6である半導体チップ600を示す平面図である。図7に示すように、貫通電極を等ピッチで配置し、影響を受け易い信号用の第1の貫通電極2の周囲に位置する貫通電極を、GND用の第2の貫通電極5とするように構成しても良い。貫通電極を多列の等ピッチで配置したことで、チップ実装を安定化することも可能となる。
図8は、実施例7である半導体チップ700を示す平面図である。図8に示すように、半導体チップ700の周辺領域に、NC(Non Connect)用の貫通電極(第3の貫通電極)40を配置するように構成しても良い。半導体チップ700の周辺領域に、NC用の貫通電極40を配置したことで、フリップチップ実装時の接続が安定化できる。
図9は、実施例8である半導体チップ800を示す平面図である。図9に示すように、第1の貫通電極2の周囲に配置される第2の貫通電極5の径を、第1の貫通電極2の径より大きく構成することで、より良好にシールドできる。
図10は、半導体チップを搭載した半導体装置900を示す断面図である。図10に示すように、実施例1と同様に構成された貫通電極を有する第1の半導体チップ、例えばメモリチップ50が複数積層配置されている。本実施例では積層されたメモリチップ50の第1の貫通電極2は、メモリチップ50と異なる機能或いは大きさ異なる第2の半導体チップ、例えばロジックチップ60に形成された導体層である電極パッド62に電気的に接続されるように構成されている。また、配線基板10とロジックチップ60とはワイヤ61で接続されている。
2 第1の貫通電極(信号用TSV)
3 第1の貫通電極のバンプ電極
4 第1の貫通電極の貫通配線
5 第2の貫通電極(GND用TSV)
6 第2の貫通電極のバンプ電極
7 第2の貫通電極の貫通配線
8 絶縁膜
9 回路領域
10 配線基板
11 絶縁基材
12 接続パッド(第1の導体部)
13 ランド(外部端子)(第2の導体部)
14 配線
15 第1の封止樹脂層(封止体)
16 第2の封止樹脂層(封止体)
17 半田ボール
20 半導体ウエハ
21 凹部
22 絶縁膜
23 導体層
31 ボンディングツール
32 ディスペンサー
33 ボールマウントツール
34 ダイシングテープ
35 ダイシングブレード
40 第3の貫通電極(NC用TSV)
50 メモリチップ
60 ロジックチップ
61 ワイヤ
62 電極パッド
150 IFチップ
100、300〜800 半導体チップ
200、900 半導体装置
Claims (10)
- 半導体基板に貫通電極を有する半導体チップであって、少なくとも一つの信号用の第1の貫通電極の周囲を囲んで、固定電位を有する第2の貫通電極を複数配置したことを特徴とする、半導体チップ。
- 前記第1の貫通電極と前記第2の貫通電極との間の距離が、該第1の貫通電極の配置ピッチより小さいことを特徴とする、請求項1に記載の半導体チップ。
- 前記第1の貫通電極及び前記第2の貫通電極の周囲がそれぞれ絶縁膜で絶縁されていることを特徴とする、請求項1又は2に記載の半導体チップ。
- 前記第1の貫通電極の径よりも前記第2の貫通電極の径が大きいことを特徴とする、請求項1〜3のいずれか一に記載の半導体チップ。
- 半導体基板に、複数の信号用の第1の貫通電極と、該第1の貫通電極の少なくとも一つの周囲を囲んで配置される固定電位を有する複数の第2の貫通電極とを含む第1の半導体チップと、
該第1の半導体チップを電気的に接続した外部端子を有する基板と、
少なくとも該第1の半導体チップを覆う封止体と、からなる半導体装置。 - 前記第1の貫通電極と前記第2の貫通電極との間の距離が、該第1の貫通電極の配置ピッチより小さいことを特徴とする、請求項5に記載の半導体装置。
- 前記第1の貫通電極及び前記第2の貫通電極の周囲が絶縁膜で絶縁されていることを特徴とする、請求項5又は6に記載の半導体装置。
- 前記第1の貫通電極の径よりも前記第2の貫通電極の径が大きいことを特徴とする、請求項5〜7のいずれか一に記載の半導体装置。
- 前記第1の半導体チップを複数有し、該複数の第1の半導体チップが前記基板上に積層搭載されることを特徴とする、請求項5〜8のいずれか一に記載の半導体装置。
- 前記基板は半導体基板(第2の半導体チップ)又は配線基板であることを特徴とする、請求項5〜9のいずれか一に記載の半導体装置。
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Cited By (3)
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---|---|---|---|---|
JP2014512692A (ja) * | 2011-04-22 | 2014-05-22 | テセラ インコーポレイテッド | 多孔質基板内のビア |
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JP2014512692A (ja) * | 2011-04-22 | 2014-05-22 | テセラ インコーポレイテッド | 多孔質基板内のビア |
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US11664316B2 (en) | 2019-08-07 | 2023-05-30 | Samsung Electronics Co., Ltd. | Semiconductor devices having penetration vias with portions having decreasing widths |
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