JP2010283650A - Piezoelectric oscillator - Google Patents

Piezoelectric oscillator Download PDF

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JP2010283650A
JP2010283650A JP2009135994A JP2009135994A JP2010283650A JP 2010283650 A JP2010283650 A JP 2010283650A JP 2009135994 A JP2009135994 A JP 2009135994A JP 2009135994 A JP2009135994 A JP 2009135994A JP 2010283650 A JP2010283650 A JP 2010283650A
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base
electrode
wire
electronic component
vibrating piece
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Masatsugu Hirano
雅嗣 平野
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Daishinku Corp
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Daishinku Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric oscillator with which a wire connection between an electronic component and an electrode of a base is stabilized and which is prevented from being disturbed in downsizing and height reduction owing to the wire connection. <P>SOLUTION: This invention relates to a piezoelectric oscillator including a piezoelectric vibrating piece 2, an electronic component 3, a base 4 with which an opening part and an internal housing part are formed, and a cover 5 which covers the opening part of the base. The piezoelectric oscillator is configured by covering the opening part of the base with the cover 5 and air-tightly sealing it. On a first plane 61 of the base, the piezoelectric vibrating piece and the electronic component are packaged so as not to be overlapped with each other, and the piezoelectric vibrating piece is electrically bonded to an electrode of the base via a conductive bonding material D1. The electronic component is electrically connected with an electrode 31 of the electronic component in one terminal portion of a wire W and electrically connected with an electrode 81 of the base in another terminal portion of the wire W and the electrode 81 of the base, to which the other terminal portion of the wire is connected, is formed at a position higher than the first plane of the base and lower than the opening part 43 of the base. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、圧電発振器に関する。   The present invention relates to a piezoelectric oscillator.

現在、圧電発振器では、その筐体が直方体のパッケージでベースと蓋とから構成される。そして、ベースと蓋とが接合されることで、パッケージの内部の圧電振動片やＩＣチップなどの電子部品が気密封止されている。圧電振動片は導電性樹脂接着材や導電バンプなどの導電性接合材を介してベースに電気的機械的に接合されており、ＩＣチップはワイヤボンディングやＦＣＢなどの手法により、前記圧電振動片やベースと電気的に接続されている。このような圧電発振器のうち、特許文献１に開示の圧電発振器では、ベースのキャビティ内において圧電振動片とＩＣチップなどの電子部品とを積層状態とせずに同一平面に配して当該本体筐体の高さ（厚み）を抑えることが考えられている。   Currently, a piezoelectric oscillator has a rectangular parallelepiped package that includes a base and a lid. Then, by joining the base and the lid, the electronic components such as the piezoelectric vibrating piece and the IC chip inside the package are hermetically sealed. The piezoelectric vibrating piece is electrically and mechanically bonded to the base via a conductive bonding material such as a conductive resin adhesive or a conductive bump, and the IC chip is bonded to the piezoelectric vibrating piece or the like by a method such as wire bonding or FCB. It is electrically connected to the base. Among such piezoelectric oscillators, in the piezoelectric oscillator disclosed in Patent Document 1, the piezoelectric resonator element and the electronic component such as an IC chip are arranged in the same plane in the cavity of the base without being laminated, and the main body casing. It is considered to suppress the height (thickness) of the film.

特開２００７−２２８２９５号公報JP 2007-228295 A

しかしながら、特許文献１のように圧電振動片とＩＣチップとを重畳させずに搭載した圧電発振器であって、ＩＣチップをワイヤにより電気的に接続する構成では、本体筐体のさらなる低背化によってワイヤボンディングする際に新たに不具合が発生することがあった。すなわち、ＩＣチップの電極と電気的に接続されるワイヤの一端部からベースの電極と電気的に接続される他端部までの距離をＷとし、ＩＣチップの電極と電気的に接続されるワイヤの一端部からワイヤの頂点までの高さをＴとした場合に、ＩＣチップの上端部とワイヤが接触することなくより安定した状態でワイヤボンディングするためには、前記Ｗ寸法かＴ寸法をできるだけ大きく設定することが必要であった。このように圧電振動片とＩＣチップとを重畳させずに搭載するとともにＩＣチップをワイヤボンディングによりベースの電極と接続する圧電発振器では、圧電発振器の小型化低背化とともにより安定した状態でワイヤボンディングするが困難になってきているのが現状である。   However, in the piezoelectric oscillator in which the piezoelectric vibrating piece and the IC chip are mounted without being overlapped as in Patent Document 1, in the configuration in which the IC chip is electrically connected by the wire, the body casing is further reduced in height. When wire bonding, a new problem sometimes occurred. That is, the distance from one end of the wire electrically connected to the electrode of the IC chip to the other end electrically connected to the base electrode is W, and the wire electrically connected to the electrode of the IC chip When the height from one end of the wire to the apex of the wire is T, in order to perform wire bonding in a more stable state without contact between the upper end of the IC chip and the wire, the W dimension or the T dimension should be set as much as possible. It was necessary to set large. In such a piezoelectric oscillator in which the piezoelectric resonator element and the IC chip are mounted without overlapping and the IC chip is connected to the base electrode by wire bonding, the wire bonding is performed in a more stable state as the piezoelectric oscillator is reduced in size and height. However, the current situation is becoming difficult.

そこで、上記課題を解決するために、電子部品とベースの電極とのワイヤ接続を安定化するとともにワイヤ接続に起因して小型化と低背化が妨げられることがない圧電発振器を提供することを目的とする。   Accordingly, in order to solve the above-described problems, it is desirable to provide a piezoelectric oscillator that stabilizes wire connection between an electronic component and a base electrode and does not hinder downsizing and low profile due to wire connection. Objective.

上記の目的を達成するため、圧電振動片(水晶振動片)と電子部品（ＩＣチップ）と、開口部と内部収納部が形成されたベースと、前記ベースの開口部を覆う蓋とを有し、ベースの開口部に蓋を被せて気密封止してなる圧電発振器（水晶発振器）であって、前記ベースの内部収納部の同一平面である第１平面に前記圧電振動片と電子部品とがお互いに重畳しないように搭載し、前記圧電振動片は導電性接合材を介してベースの電極に電気的に接合されるとともに、電子部品はワイヤの一端部で電子部品の電極と電気的に接続され、ワイヤの他端部でベースの電極と電気的に接続されており、前記ワイヤの他端部が接続されるベースの電極が、前記ベースの第１平面より高く、ベースの開口部より低い位置に形成されたことを特徴とする。   In order to achieve the above object, a piezoelectric vibrating piece (crystal vibrating piece), an electronic component (IC chip), a base on which an opening and an internal storage portion are formed, and a lid that covers the opening of the base A piezoelectric oscillator (quartz oscillator) formed by covering the opening of the base with a lid and hermetically sealed, wherein the piezoelectric vibrating piece and the electronic component are arranged on a first plane that is the same plane as the internal storage portion of the base. Mounted so that they do not overlap each other, the piezoelectric vibrating piece is electrically bonded to the base electrode via a conductive bonding material, and the electronic component is electrically connected to the electrode of the electronic component at one end of the wire The other end of the wire is electrically connected to the base electrode, and the base electrode to which the other end of the wire is connected is higher than the first plane of the base and lower than the opening of the base. It is formed in a position.

具体的な構成の一つとしては、前記ベースの内部収納部で、少なくとも前記電子部品と前記圧電振動片がお互いに隣接する領域を除いた電子部品が搭載される周囲の領域には、前記ベースの第１平面より高く、ベースの開口部より低い第２平面を有し、電子部品と圧電振動片が隣接する領域には前記第２平面が存在しない切欠部を有しており、当該第２平面上面にはワイヤの他端部が接続される電極が形成された構成である。   As a specific configuration, in the internal storage portion of the base, at least a region around the electronic component except the region where the electronic component and the piezoelectric vibrating piece are adjacent to each other is mounted on the base. A second plane that is higher than the first plane and lower than the opening of the base, and has a notch in which the second plane does not exist in a region where the electronic component and the piezoelectric vibrating piece are adjacent to each other. An electrode to which the other end of the wire is connected is formed on the upper surface of the plane.

また、別の具体的な構成としては、前記ワイヤの他端部が接続されるベースの第１平面の電極の厚みが、他の第１平面の電極より厚く形成された構成である。   Another specific configuration is a configuration in which the thickness of the electrode on the first plane of the base to which the other end of the wire is connected is thicker than the electrode on the other first plane.

本発明の構成によれば、前記ベースの内部収納部の同一平面である第１平面に前記圧電振動片と電子部品とがお互いに重畳しないように搭載することで、圧電振動片と電子部品の搭載位置を近接することができ、お互いを接続ライン（配線パターン等）も短くすることができるので不要ノイズの影響がないより性能の高い圧電発振器が得られる。また電子部品をワイヤ接続する際に圧電振動片が障壁となることもない。このような圧電発振器では小型化や低背化に起因してワイヤ接続する際に不具合が生じやすくなるという特有の問題があった。本発明では前記ワイヤの他端部が接続されるベースの電極が、前記ベースの第１平面より高く、ベースの開口部より低い位置に形成されているので、電子部品の電極とベースの電極とをワイヤで電気的に接続する場合に、電子部品の上端部とワイヤが接触することなく、より安定した状態でワイヤボンディングすることができる。また、ワイヤの他端部が接続されるベースの電極が、前記ベースの第１平面より高く、ベースの開口部より低い位置でワイヤボンディングすることで、電子部品の電極とベースの電極の距離を近接した状態で配置形成してもワイヤボンディングが安定した状態で行え、かつ電子部品の電極と電気的に接続されるワイヤの一端部からワイヤの頂点までの高さが低い状態でワイヤボンディングしても安定した状態で行える。結果として、圧電振動片と電子部品とを重畳させずに搭載するとともに電子部品をワイヤボンディングによりベースの電極と接続する圧電発振器に対して、電子部品とベースの電極とのワイヤ接続を安定化するとともにさらなる小型化と低背化が容易になる。   According to the configuration of the present invention, the piezoelectric vibrating piece and the electronic component are mounted on the first plane, which is the same plane of the internal storage portion of the base, so that the piezoelectric vibrating piece and the electronic component do not overlap each other. Since the mounting positions can be close to each other and the connection lines (wiring patterns, etc.) can be shortened, a piezoelectric oscillator with higher performance without the influence of unnecessary noise can be obtained. Further, the piezoelectric vibrating reed does not become a barrier when the electronic component is connected by wire. In such a piezoelectric oscillator, there is a specific problem that a defect is likely to occur when connecting wires due to downsizing and low profile. In the present invention, the electrode of the base to which the other end of the wire is connected is formed at a position higher than the first plane of the base and lower than the opening of the base. Can be bonded in a more stable state without contact between the upper end of the electronic component and the wire. The distance between the electrode of the electronic component and the base electrode is reduced by wire bonding at a position where the base electrode to which the other end of the wire is connected is higher than the first plane of the base and lower than the opening of the base. Wire bonding can be performed in a state where wire bonding is stable even if it is arranged in close proximity, and the height from one end of the wire electrically connected to the electrode of the electronic component to the apex of the wire is low. Can be performed in a stable state. As a result, the wire connection between the electronic component and the base electrode is stabilized with respect to the piezoelectric oscillator in which the piezoelectric vibrating piece and the electronic component are mounted without overlapping and the electronic component is connected to the base electrode by wire bonding. At the same time, further downsizing and height reduction are facilitated.

また、上述の作用効果に加えて、上記第２平面を構成するものでは、電極が形成される土台もベースの一部からなる平坦で安定した高さ寸法の設計が容易な第２平面に対して形成することができる。この第２平面は、電子部品が搭載される周囲の領域に形成され、電子部品と圧電振動片が隣接する領域には前記第２平面が存在しない切欠部を有しているので、電子部品と第２平面を近接配置することでワイヤ接続も近接かつ安定して行えるとともに、電子部品と圧電振動片も近接した状態でお互いに接続し配置することができる。結果として、電子部品とベースの電極とのワイヤ接続を安定化するとともに圧電発振器の小型化と低背化を妨げることもない。   Further, in addition to the above-described effects, in the configuration of the second plane, the base on which the electrode is formed is also a part of the base, and the second plane is easy to design with a flat and stable height dimension. Can be formed. The second plane is formed in a peripheral area where the electronic component is mounted, and the electronic component and the piezoelectric vibrating piece have a notch portion in which the second plane does not exist in the adjacent area. By arranging the second planes close to each other, wire connection can be made close and stable, and the electronic component and the piezoelectric vibrating piece can also be connected to each other and placed close to each other. As a result, the wire connection between the electronic component and the base electrode is stabilized and the piezoelectric oscillator is not hampered in size and height reduction.

また、上述の作用効果に加えて、前記ワイヤの他端部が接続される厚肉のベースの電極を構成するものでは、電子部品と厚肉のベースの電極を近接配置することでワイヤ接続も近接して行えるとともに、厚肉のベースの電極を除いて、電子部品が搭載される周囲の内部収納部を広く形成することができる。ワイヤボンディングする際のボンディングツールの挿入を妨げることなく安定したワイヤ接続が行える。また電子部品と圧電振動片も近接した状態でお互いに接続し配置することができる。結果として、電子部品とベースの電極とのワイヤ接続を安定化するとともに圧電発振器の小型化と低背化を妨げることもない。   In addition to the above-described effects, in the case of constituting a thick base electrode to which the other end of the wire is connected, wire connection is also possible by arranging the electronic component and the thick base electrode close to each other. In addition to being able to be close to each other, it is possible to widely form a surrounding internal storage portion on which electronic components are mounted, except for the thick base electrode. A stable wire connection can be made without hindering the insertion of the bonding tool during wire bonding. In addition, the electronic component and the piezoelectric vibrating piece can be connected to each other and arranged in close proximity. As a result, the wire connection between the electronic component and the base electrode is stabilized and the piezoelectric oscillator is not hampered in size and height reduction.

本発明によれば、電子部品とベースの電極とのワイヤ接続を安定化するとともにワイヤ接続に起因して小型化と低背化が妨げられることがない圧電発振器を提供することができる。   According to the present invention, it is possible to provide a piezoelectric oscillator that stabilizes the wire connection between the electronic component and the base electrode and does not hinder downsizing and height reduction due to the wire connection.

本発明の実施例１にかかる水晶発振器の概略構成を示した平面図。1 is a plan view showing a schematic configuration of a crystal oscillator according to Embodiment 1 of the present invention. 図1のＡ−Ａ線に沿った断面図。Sectional drawing along the AA line of FIG. 本発明の実施例２にかかる水晶発振器の概略構成を示した平面図。The top view which showed schematic structure of the crystal oscillator concerning Example 2 of this invention. 図３のＢ−Ｂ線に沿った断面図。Sectional drawing along the BB line of FIG. 本発明の実施例２の変形例にかかる水晶発振器の概略構成を示した平面図。The top view which showed schematic structure of the crystal oscillator concerning the modification of Example 2 of this invention.

以下、本発明の実施形態について圧電発振器として表面実装型水晶発振器を例にしながら図面を参照して説明する。図１は本発明の実施例１にかかる水晶発振器の概略構成を示した平面図であり、図２は図１のＡ−Ａ線に沿った断面図である。図３は本発明の実施例２にかかる水晶発振器の平面図であり、図４は図３のＢ−Ｂ線に沿った断面図である。図５は本発明の実施例２の変形例にかかる水晶発振器の概略構成を示した平面図である。なお同様の部分については同番号を付すとともに説明の一部を省略している。   Hereinafter, embodiments of the present invention will be described with reference to the drawings, taking a surface-mounted crystal oscillator as an example of a piezoelectric oscillator. 1 is a plan view showing a schematic configuration of a crystal oscillator according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA of FIG. 3 is a plan view of a crystal oscillator according to a second embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along the line BB of FIG. FIG. 5 is a plan view showing a schematic configuration of a crystal oscillator according to a modification of the second embodiment of the present invention. In addition, the same number is attached | subjected about the same part and some description is abbreviate | omitted.

本発明の実施形態にかかる水晶発振器１は、水晶振動片２と集積回路素子としてのＩＣチップ（電子部品）３と、これらを配置して保持するベース４と、ベース４と接合してベース４に配置保持した水晶振動片２とＩＣチップ３を気密封止するための蓋５とを含む構成とである。   A crystal oscillator 1 according to an embodiment of the present invention includes a crystal resonator element 2, an IC chip (electronic component) 3 as an integrated circuit element, a base 4 that arranges and holds them, and a base 4 that is joined to the base 4. And a lid 5 for hermetically sealing the IC chip 3 and the IC chip 3.

図１、図２に示すように、実施例１の水晶発振器１では、ベース４と蓋５とが接合されて本体筐体（図示省略）が成形され、本体筐体の内部のベース４上に水晶振動片２とＩＣチップ３とが配される。またこの時、本体筐体の内部に水晶振動片２とＩＣチップ３とを配するための配置領域であるキャビティ６（内部収納部）が形成される。このキャビティ６は、蓋５とベース４により気密封止されたベース４の内部空間である。また、キャビティ６には、第１平面としての底面部６１とこの底面部６１より上層となる第２平面としての段部６２が設けられ、水晶振動片２とＩＣチップ３とは底面部６１上にお互いに重畳しないように配され、ＩＣチップ３と接続されるワイヤＷは段部６２上で接続されている。   As shown in FIGS. 1 and 2, in the crystal oscillator 1 according to the first embodiment, a base 4 and a lid 5 are joined to form a main body casing (not shown), and the main body casing is formed on the base 4 inside the main body casing. A crystal vibrating piece 2 and an IC chip 3 are arranged. At this time, a cavity 6 (internal storage portion) that is an arrangement region for arranging the crystal vibrating piece 2 and the IC chip 3 is formed inside the main body casing. The cavity 6 is an internal space of the base 4 hermetically sealed by the lid 5 and the base 4. Further, the cavity 6 is provided with a bottom surface portion 61 as a first plane and a step portion 62 as a second plane that is an upper layer above the bottom surface portion 61, and the crystal vibrating piece 2 and the IC chip 3 are located on the bottom surface portion 61. The wires W arranged so as not to overlap each other and connected to the IC chip 3 are connected on the step portion 62.

次に、この水晶発振器の各構成について説明する。   Next, each configuration of the crystal oscillator will be described.

水晶振動片２は、図１に示すように、ＡＴカットの水晶片（図示省略）からなり、平面視矩形上の一枚板の直方体に成形されている。この水晶振動片２の両主面２１，２２には、それぞれ励振電極２３と、これらの励振電極２３を外部電極と電気的に接続するための接続電極２４と、励振電極２３を接続電極に引き出すための引出電極２５とが形成されている。そして、水晶振動片２は、導電性接着剤Ｄ１（本発明でいう導電性接合材）を用いてベース４（キャビティ６の底面部６１）に形成された複数の電極パターン７に電気機械的に接合されている。なお、励振電極２３，接続電極２４，および引出電極２５は、真空蒸着法やスパッタリング法により形成され、例えば、水晶振動板側からクロム、金の順に、あるいはクロム、金、クロムの順に、あるいはクロム、銀、クロムの順に積層して形成されている。なお、本実施例で用いる導電性接着剤Ｄ１は、硬化温度が１８０度程度の導電性シリコーン系樹脂が用いられている。また、導電性接合材として導電性シリコーン系樹脂に限定されるものではなく、導電性ウレタン系樹脂などの他の樹脂であってもよく、また、金などの金属バンプであってもよい。   As shown in FIG. 1, the quartz crystal vibrating piece 2 is formed of an AT-cut quartz piece (not shown), and is formed into a single rectangular parallelepiped on a rectangular plan view. Excitation electrodes 23, connection electrodes 24 for electrically connecting the excitation electrodes 23 to external electrodes, and the excitation electrodes 23 are drawn to the connection electrodes on both main surfaces 21 and 22 of the quartz crystal resonator element 2. For this purpose, an extraction electrode 25 is formed. Then, the quartz crystal vibrating piece 2 is electromechanically applied to the plurality of electrode patterns 7 formed on the base 4 (the bottom surface portion 61 of the cavity 6) using the conductive adhesive D1 (conductive bonding material referred to in the present invention). It is joined. The excitation electrode 23, the connection electrode 24, and the extraction electrode 25 are formed by a vacuum deposition method or a sputtering method. For example, from the quartz diaphragm side in the order of chromium and gold, or in the order of chromium, gold, and chromium, or chromium , Silver and chrome are laminated in this order. The conductive adhesive D1 used in this example is made of a conductive silicone resin having a curing temperature of about 180 degrees. Further, the conductive bonding material is not limited to the conductive silicone resin, and may be another resin such as a conductive urethane resin, or may be a metal bump such as gold.

ＩＣチップ３は、図１に示すように、水晶振動片２とともに発振回路を構成する１チップ集積回路素子であり、接続端子３１が複数形成されている。本実施例では、ＩＣチップ３にベアチップを採用している。ＩＣチップ３は、高硬化性接合材Ｄ２によりベース４（キャビティ６の底面部６１）に機械的に接合される。なお、本実施例では、高硬化性接合材Ｄ２として硬化温度が２９０度程度のポリイミド系樹脂を用いている。また、高硬化性接合材Ｄ２としてポリイミド系樹脂が好ましいがポリイミド系樹脂に限定されるものではなく、エポキシ系樹脂（銀ペースト）であってもよい。そして、ＩＣチップ３の複数の接続端子３１は、ワイヤＷを用いてベース４（キャビティ６の段部６２）に形成された複数の電極パターン８に電気的に接続されている。なお、図１では、６つの接続端子３１について金などからなるワイヤＷを用いて６つの電極パターン８に電気的に接続されている例を示している。また、ワイヤＷは、図１に示すように、キャビティ６内のベース４の平面視上において露出されており、ワイヤＷの一端部（ＩＣチップとの接続端部）から他端部（ベースとの接続部）の配線方向が、水晶振動片２の存在しない方向に偏らせてワイヤＷが配線されるようにベースの電極パターン８に対してＩＣチップの接続端子３１の位置を配置している。   As shown in FIG. 1, the IC chip 3 is a one-chip integrated circuit element that forms an oscillation circuit together with the crystal vibrating piece 2, and a plurality of connection terminals 31 are formed. In this embodiment, a bare chip is employed for the IC chip 3. The IC chip 3 is mechanically bonded to the base 4 (the bottom surface portion 61 of the cavity 6) by a highly curable bonding material D2. In this embodiment, a polyimide resin having a curing temperature of about 290 degrees is used as the highly curable bonding material D2. In addition, a polyimide resin is preferable as the highly curable bonding material D2, but is not limited to the polyimide resin, and may be an epoxy resin (silver paste). The plurality of connection terminals 31 of the IC chip 3 are electrically connected to the plurality of electrode patterns 8 formed on the base 4 (the stepped portion 62 of the cavity 6) using wires W. FIG. 1 shows an example in which the six connection terminals 31 are electrically connected to the six electrode patterns 8 using wires W made of gold or the like. Further, as shown in FIG. 1, the wire W is exposed in a plan view of the base 4 in the cavity 6, and the other end (base and the end) of the wire W from one end (connection end to the IC chip). The position of the connection terminal 31 of the IC chip is arranged with respect to the electrode pattern 8 of the base so that the wire W is wired in such a way that the wiring direction of the connection portion is biased in the direction in which the crystal vibrating piece 2 does not exist. .

ベース４は、アルミナ等のセラミックとタングステン等の導電材料を適宜積層した構成からなる。このベース４は、図１，２に示すように、箱状体に形成され、セラミック材料からなる平面視矩形状の一枚板上に、所定形状からなる導電材料および中空を有するセラミック材料を積層して断面視略凹状に一体的に焼成されている。また、中空を有するセラミック材料は、平面視矩形状の一枚板のセラミック材料の表面外周に沿って成形されている。この中空を有するセラミック材料の上面は、蓋との接合領域４３（開口部）であり、この接合領域４３には、蓋と接合するためのメタライズ層が設けられている。ベース４の平面視四隅を含む外周には、複数のキャスタレーションＣが形成されている。キャスタレーションは、ベース４の半円弧状の切り欠き（半円弧状の凹部）が本体筐体の表面から裏面にかけて形成されている。なお、このキャスタレーションには図示しない電極パターンが形成されている。   The base 4 has a configuration in which a ceramic such as alumina and a conductive material such as tungsten are appropriately laminated. As shown in FIGS. 1 and 2, the base 4 is formed in a box-like body, and a conductive material having a predetermined shape and a ceramic material having a hollow shape are laminated on a single plate having a rectangular shape in plan view made of a ceramic material. Then, it is integrally fired in a substantially concave shape in cross section. Moreover, the ceramic material which has a hollow is shape | molded along the outer periphery of the surface of the ceramic material of the single plate rectangular shape planar view. The upper surface of the hollow ceramic material is a bonding region 43 (opening) with the lid, and a metallized layer for bonding with the lid is provided in the bonding region 43. A plurality of castellations C are formed on the outer periphery including the four corners of the base 4 in plan view. In the castellation, a semicircular cutout (semicircular recess) of the base 4 is formed from the front surface to the back surface of the main body housing. In this castellation, an electrode pattern (not shown) is formed.

また、図１に示すように、ベース４の表面であるキャビティ６の底面部６１（第1平面）には、水晶振動片２の接続電極２４と、外部（外部部品や外部機器）の電極とを電気的に接続するための複数の電極パターン７が形成されている。また、ベース４の表面であり、前記底面部６１より高く、前記接合領域４３より低いキャビティ６の段部６２（第２平面）には、ＩＣチップ３の接続端子３１と、外部（外部部品や外部機器）の電極とを電気的に接続するための複数の電極パターン８が形成されている。また、図２に示すように、ベース４の裏面４５には、外部（外部部品や外部機器）の電極との接続（接合）の外部端子となる複数の端子電極（図示省略）が形成されている。   As shown in FIG. 1, the bottom surface portion 61 (first plane) of the cavity 6, which is the surface of the base 4, includes the connection electrode 24 of the crystal vibrating piece 2, and external (external parts and external devices) electrodes. A plurality of electrode patterns 7 for electrically connecting the two are formed. Further, on the step portion 62 (second plane) of the cavity 6 which is the surface of the base 4 and is higher than the bottom surface portion 61 and lower than the bonding region 43, the connection terminal 31 of the IC chip 3 and the outside (external component or A plurality of electrode patterns 8 for electrically connecting the electrodes of the external device) are formed. In addition, as shown in FIG. 2, a plurality of terminal electrodes (not shown) are formed on the back surface 45 of the base 4 to serve as external terminals for connection (bonding) with external (external parts or external devices) electrodes. Yes.

段部６２は、キャビティ６のうち搭載される水晶振動片２とＩＣチップ３がお互いに隣接する領域を除き、ＩＣチップ３が搭載される周囲の領域に形成されている。具体的に段部６２は、キャビティ６のうち搭載される水晶振動片２とＩＣチップ３がお互いに隣接する領域には底面部６１が露出した切欠部６２１を有しており、この切欠部６２１でＩＣチップ３の水晶振動片側の端部が少しはみ出るように構成されており、この切欠部６２１を除いてＩＣチップ３の周囲に３方向に段部６２２，６２３，６２４が形成されている。この構成によりワイヤＷの他端部が接続されるベース４の電極パターン８が、ベース４の底面部６１より高く、ベース４の接合領域４３（開口部）より低い位置に形成されている。上述のように切欠部６２１でＩＣチップ３の水晶振動片側の端部が少しはみ出るように構成していることで、水晶振動片２とＩＣチップ３をより一層近接配置することができる一方で、ＩＣチップに接続されるワイヤＷについては水晶振動片２から隔離させることができる。このため水晶発振器の小型化に寄与することができるだけでなく、小型化によるワイヤＷの断線の危険性をなくすことも同時に実現できる。   The step portion 62 is formed in a peripheral region where the IC chip 3 is mounted, except for a region where the crystal resonator element 2 and the IC chip 3 mounted in the cavity 6 are adjacent to each other. Specifically, the step portion 62 has a notch portion 621 in which the bottom surface portion 61 is exposed in a region of the cavity 6 where the crystal resonator element 2 and the IC chip 3 to be mounted are adjacent to each other. The end of the IC chip 3 on the side of the crystal vibrating piece protrudes slightly, and step portions 622, 623, and 624 are formed around the IC chip 3 in three directions except for the notch portion 621. With this configuration, the electrode pattern 8 of the base 4 to which the other end portion of the wire W is connected is formed at a position higher than the bottom surface portion 61 of the base 4 and lower than the bonding region 43 (opening portion) of the base 4. As described above, the crystal resonator element 2 and the IC chip 3 can be arranged closer to each other by being configured such that the end portion of the IC chip 3 on the crystal resonator element side protrudes slightly at the notch 621. The wire W connected to the IC chip can be isolated from the crystal vibrating piece 2. For this reason, not only can the crystal oscillator be miniaturized, but also the risk of disconnection of the wire W due to the miniaturization can be eliminated at the same time.

電極パターン７は、水晶振動片２と少なくとも電気的に接続するための電極パッド７１と、これら電極パッド７１をそれぞれに対応した後述するＩＣチップ３と接続される電極パターン８に引き出すための引回電極７２とから構成されている。電極パターン８は、ＩＣチップ３とワイヤＷにより少なくとも電気的に接続するための電極パッド８１と、キャビティ６内からキャスタレーションＣを介してベース２の裏面４５に引き出され、ベース２の裏面４５に形成される端子電極９に引き出すための引回電極８２とから構成されている。   The electrode pattern 7 includes an electrode pad 71 for at least electrical connection with the crystal vibrating piece 2 and a routing for drawing out the electrode pad 71 to an electrode pattern 8 connected to an IC chip 3 to be described later. And an electrode 72. The electrode pattern 8 is drawn out from the cavity 6 to the back surface 45 of the base 2 via the castellation C, and is connected to the back surface 45 of the base 2. It is comprised from the routing electrode 82 for drawing out to the terminal electrode 9 formed.

また、段部６２（第２平面）の複数の電極パターン８のうち、電極キャビティ６内でのＩＣチップ３の電気的接続を行うためのワイヤＷを接続する電極パッド８１の位置については、図１に示すように、キャビティ６を構成する壁面６３から離れるように位置設定されており、搭載されたＩＣチップ３の接続端子３１に対しても、それぞれワイヤＷが接続されて対応する電極パッド８１の形成位置を水晶振動片２の存在しない向きに偏らせて位置設定されている。このため、キャビティ６の壁面６３に接しない状態でワイヤボンディングできる領域を確保することができる。また、ワイヤＷの一端部（ＩＣチップとの接続端部）から他端部（ベースとの接続部）の配線を水晶振動片２の存在しない方向に偏向させることができる。つまり、全てのワイヤＷが水晶振動片２から遠ざかる向きに配線されているので、水晶振動片２とＩＣチップ３とを近接配置したとしても、水晶振動片２を搭載する際に搭載ノズルなどがワイヤＷに接触する危険性が格段におさえられ、水晶振動片２とＩＣチップ３のより安定した安全な実装構造が得られる。   Of the plurality of electrode patterns 8 on the step 62 (second plane), the positions of the electrode pads 81 to which the wires W for electrical connection of the IC chip 3 in the electrode cavity 6 are connected are shown in FIG. 1, the position is set so as to be away from the wall surface 63 constituting the cavity 6, and the wire W is connected to the connection terminal 31 of the mounted IC chip 3, and the corresponding electrode pad 81. The position is set by biasing the forming position of the crystal in the direction in which the crystal vibrating piece 2 does not exist. For this reason, the area | region which can be wire-bonded in the state which does not contact the wall surface 63 of the cavity 6 is securable. Further, the wiring from one end portion (connection end portion to the IC chip) of the wire W to the other end portion (connection portion to the base) can be deflected in a direction where the crystal vibrating piece 2 does not exist. That is, since all the wires W are routed away from the crystal vibrating piece 2, even when the crystal vibrating piece 2 and the IC chip 3 are arranged close to each other, a mounting nozzle or the like is used when the crystal vibrating piece 2 is mounted. The risk of contact with the wire W is greatly reduced, and a more stable and safe mounting structure of the crystal vibrating piece 2 and the IC chip 3 can be obtained.

以上により水晶振動片２およびＩＣチップ３は端子電極から外部（外部部品や外部機器）と接続（接合）される。なお、本実施例では、図１に示すように、これらの電極パターンの一部が、キャビティ６内の平面視上において露出形成されている。本実施例でいう端子電極には、少なくとも、Ｇｎｄ用電極パターンと、出力用電極パターンと、ＯＥ（Ｏｕｔｐｕｔ Ｅｎａｂｌｅ）用電極パターンと、ＶDD用電極パターンと、水晶測定端子用電極パターン（水晶検査端子用電極パターンも含む）等がある。このような電極パターン７，８および端子電極は、例えばタングステンやモリブデンのメタライズ層（図示省略）の上部にニッケルメッキと金メッキが形成されている。 As described above, the crystal resonator element 2 and the IC chip 3 are connected (joined) to the outside (external parts or external devices) from the terminal electrodes. In this embodiment, as shown in FIG. 1, a part of these electrode patterns is exposed and formed in plan view in the cavity 6. The terminal electrode in this embodiment includes at least a Gnd electrode pattern, an output electrode pattern, an OE (Output Enable) electrode pattern, a V DD electrode pattern, and a crystal measurement terminal electrode pattern (crystal inspection). Including terminal electrode patterns). Such electrode patterns 7 and 8 and terminal electrodes are formed with nickel plating and gold plating on the upper part of a metallized layer (not shown) of tungsten or molybdenum, for example.

蓋５は、金属材料からなり、平面視矩形状の一枚板に成形されている。この蓋５は、下面にろう材（図示省略）が形成されており、シーム溶接やビーム溶接等の手法によりベース４に接合されて、蓋５とベース４とによる水晶発振器の本体筐体が成形される。具体的に、蓋５は、コバールからなるコア材に金属層としての金属ろう材が形成された構成であり、より詳しくは、例えば上面からニッケル層、コバールコア材、銅層、銀ろう層の順の多層構成である。ここでいう銀ろう層がベース２のメタライズ層と接合される。また、銀ろう層の一部がベース４のメタライズ層と接合するための溶接領域とされ、この溶接領域は蓋の平面視外周端部に沿って設定されている。蓋５の平面視外形はベース２の外形とほぼ同じであるか、若干小さい構成となっている。   The lid 5 is made of a metal material and is formed into a single plate having a rectangular shape in plan view. The lid 5 has a brazing material (not shown) formed on the lower surface, and is joined to the base 4 by a technique such as seam welding or beam welding to form a crystal oscillator main body casing by the lid 5 and the base 4. Is done. Specifically, the lid 5 has a configuration in which a metal brazing material as a metal layer is formed on a core material made of Kovar. More specifically, for example, a nickel layer, a Kovar core material, a copper layer, and a silver brazing layer are arranged in this order from the upper surface. It is a multilayer structure. The silver brazing layer here is joined to the metallized layer of the base 2. Further, a part of the silver brazing layer is a welding region for joining with the metallized layer of the base 4, and this welding region is set along the outer peripheral end of the lid in plan view. The plan view outline of the lid 5 is substantially the same as or slightly smaller than the outline of the base 2.

上記した構成要件を含んだ水晶発振器１では、ベース４のキャビティ６にＩＣチップ３および水晶振動片２を配してそれぞれ上記したように電気機械的に接合し、これらＩＣチップ３および水晶振動片２を蓋５にて被覆し、ベース４のメタライズ層と蓋５の銀ろう層の一部とを溶融硬化させて接合させ、キャビティ６内のＩＣチップ３および水晶振動片２の気密封止を行う。また、この水晶発振器では、図１に示すように、ベース４のキャビティ６内の底面部６１（第１平面）の平面視上において、ワイヤＷを露出した状態で水晶振動片２とＩＣチップ３とがお互いに重畳しないように搭載されており、水晶振動片２は導電性接着剤Ｄ１を介してベース４の電極パッド７１に電気的に接合される。ＩＣチップ３は高硬化性接合材Ｄ２を介してベース４の底面部６１に機械的に接合され、ワイヤＷの一端部でＩＣチップの接続端子３１と電気的に接続され、ワイヤＷの他端部でベース４の段部６２（第２平面）に形成された複数の電極パターン８に電気的に接続されている。以上により本発明の実施例１による水晶発振器１の完成となる。   In the crystal oscillator 1 including the above-described constituent elements, the IC chip 3 and the crystal vibrating piece 2 are disposed in the cavity 6 of the base 4 and are electromechanically joined as described above. 2 is covered with a lid 5, the metallized layer of the base 4 and a part of the silver brazing layer of the lid 5 are melt-cured and bonded, and the IC chip 3 and the quartz crystal vibrating piece 2 in the cavity 6 are hermetically sealed. Do. Further, in this crystal oscillator, as shown in FIG. 1, the crystal vibrating piece 2 and the IC chip 3 with the wire W exposed in a plan view of the bottom surface portion 61 (first plane) in the cavity 6 of the base 4. Are mounted so as not to overlap each other, and the crystal vibrating piece 2 is electrically bonded to the electrode pad 71 of the base 4 via the conductive adhesive D1. The IC chip 3 is mechanically bonded to the bottom surface portion 61 of the base 4 via the highly curable bonding material D2, and is electrically connected to the connection terminal 31 of the IC chip at one end portion of the wire W, and the other end of the wire W. Are electrically connected to the plurality of electrode patterns 8 formed on the stepped portion 62 (second plane) of the base 4. Thus, the crystal oscillator 1 according to the first embodiment of the present invention is completed.

上述の実施例１により、ベース４のキャビティ６の底面部６１（第1平面）には、水晶振動片２とＩＣチップ３とがお互いに重畳しないように搭載することで、水晶振動片２とＩＣチップ３の搭載位置を近接することができ、お互いを接続ライン（配線パターン等）も短くすることができるので不要ノイズの影響がないより性能の高い水晶発振器が得られる。またＩＣチップ３をワイヤＷで接続する際に水晶振動片２が障壁となることもない。このような水晶発振器では小型化や低背化に起因してワイヤＷを接続する際に不具合が生じやすくなるという特有の問題があった。本発明の実施例１ではワイヤＷの他端部が接続されるベース４の電極パッド８１が、ベース４の底面部６１より高く、ベースの接合領域４３より低い位置に形成されているので、ＩＣチップ３の接続電極３１とベース４の電極パッド８１とをワイヤＷで電気的に接続する場合に、ＩＣチップ３の上端部とワイヤＷが接触することなく、より安定した状態でワイヤボンディングすることができる。また、ワイヤＷの他端部が接続されるベース４の電極パッド８１が、ベース４の底面部６１より高く、ベースの接合領域４３より低い位置でワイヤボンディングすることで、ＩＣチップ３の接続電極３１とベース４の電極パッド８１の距離を近接した状態で配置形成してもワイヤボンディングが安定した状態で行え、かつＩＣチップ３の接続電極３１と電気的に接続されるワイヤＷの一端部からワイヤＷの頂点までの高さが低い状態でワイヤボンディングしても安定した状態で行える。結果として、水晶振動片２とＩＣチップ３とを重畳させずに搭載するとともにＩＣチップ３をワイヤボンディングによりベース４の電極パッド８１と接続する水晶発振器に対して、ＩＣチップ３とベース４の電極パッド８１とのワイヤＷによる接続を安定化するとともにさらなる小型化と低背化が容易になる。   According to the first embodiment, the crystal vibrating piece 2 and the IC chip 3 are mounted on the bottom surface portion 61 (first plane) of the cavity 6 of the base 4 so as not to overlap each other. Since the mounting positions of the IC chip 3 can be close to each other and the connection lines (wiring patterns, etc.) can be shortened, a crystal oscillator with higher performance without the influence of unnecessary noise can be obtained. Further, when the IC chip 3 is connected by the wire W, the crystal vibrating piece 2 does not become a barrier. In such a crystal oscillator, there is a specific problem that a problem is likely to occur when the wire W is connected due to a reduction in size and height. In Embodiment 1 of the present invention, the electrode pad 81 of the base 4 to which the other end of the wire W is connected is formed at a position higher than the bottom surface portion 61 of the base 4 and lower than the bonding region 43 of the base. When the connection electrode 31 of the chip 3 and the electrode pad 81 of the base 4 are electrically connected by the wire W, the upper end portion of the IC chip 3 and the wire W are not in contact with each other and wire bonding is performed in a more stable state. Can do. Further, the electrode pad 81 of the base 4 to which the other end portion of the wire W is connected is wire-bonded at a position higher than the bottom surface portion 61 of the base 4 and lower than the bonding region 43 of the base 4. Even if the electrode pad 81 of the base 4 and the electrode pad 81 of the base 4 are arranged close to each other, wire bonding can be performed in a stable state and from one end of the wire W that is electrically connected to the connection electrode 31 of the IC chip 3 Even if wire bonding is performed in a state where the height to the apex of the wire W is low, it can be performed in a stable state. As a result, the electrodes of the IC chip 3 and the base 4 are mounted on the crystal oscillator in which the crystal vibrating piece 2 and the IC chip 3 are mounted without overlapping and the IC chip 3 is connected to the electrode pad 81 of the base 4 by wire bonding. The connection with the pad 81 by the wire W is stabilized, and further downsizing and low profile are facilitated.

また、ベース４の表面であり、前記底面部６１より高く、前記接合領域４３より低いキャビティ６の段部６２に対して複数の電極パターン８（電極パッド８１と引回電極８２）が形成されているので、電極パターン８が形成される土台もベースの一部からなる平坦で安定した高さ寸法の設計が容易な段部６２に対して形成することができる。また段部６２は、キャビティ６のうち搭載される水晶振動片２とＩＣチップ３がお互いに隣接する領域には底面部６１が露出した切欠部６２１を有しているので、ＩＣチップ３と段部６２を近接配置することでワイヤＷの接続も近接かつ安定して行えるとともに、ＩＣチップ３と水晶振動片２も近接した状態でお互いに接続し配置することができる。結果として、ＩＣチップ３とベース４の電極パッド８１とのワイヤＷの接続を安定化するとともに水晶発振器の小型化と低背化を妨げることもない。   A plurality of electrode patterns 8 (electrode pads 81 and routing electrodes 82) are formed on the step 62 of the cavity 6 which is the surface of the base 4 and is higher than the bottom surface 61 and lower than the bonding region 43. Therefore, the base on which the electrode pattern 8 is formed can also be formed on the stepped portion 62 which is a part of the base and can be easily designed with a flat and stable height dimension. Further, the step portion 62 has a notch portion 621 in which the bottom surface portion 61 is exposed in a region of the cavity 6 where the crystal resonator element 2 and the IC chip 3 to be mounted are adjacent to each other. By arranging the portions 62 close to each other, the wires W can be connected in a close and stable manner, and the IC chip 3 and the crystal vibrating piece 2 can also be connected to each other in a close state. As a result, the connection of the wire W between the IC chip 3 and the electrode pad 81 of the base 4 is stabilized and the size and height of the crystal oscillator are not hindered.

また、上記した実施例１では、底面部６１より高く、前記接合領域４３より低いキャビティ６の段部６２に対して複数の電極パターン８を形成することで、ワイヤＷの他端部が接続されるベース４の電極パッド８１の位置をベース４の底面部６１より高くしている。そこで、図３、図４に示す実施例２では、ワイヤＷの他端部が接続されるベース４の電極パッド８１の厚みが、底面部６１の電極パターン８の引回電極８２、および電極パターン７（電極パッド７１と引回電極７２）より厚く形成することで上記実施例１と同様の効果を生じさせている。なお、実施例１と同様の構成は同番号を付すとともに詳細な説明については省略している。   In the first embodiment described above, the other end portion of the wire W is connected by forming the plurality of electrode patterns 8 on the step portion 62 of the cavity 6 that is higher than the bottom surface portion 61 and lower than the bonding region 43. The position of the electrode pad 81 of the base 4 is higher than the bottom surface portion 61 of the base 4. Therefore, in Example 2 shown in FIGS. 3 and 4, the thickness of the electrode pad 81 of the base 4 to which the other end of the wire W is connected is such that the lead electrode 82 of the electrode pattern 8 of the bottom surface 61 and the electrode pattern 7 (the electrode pad 71 and the routing electrode 72) is formed thicker, and the same effect as in the first embodiment is produced. In addition, the same structure as Example 1 attaches | subjects the same number, and it abbreviate | omits about detailed description.

具体的には、実施例２では、電極パターン８をメタライズで形成する際に、電極パッド８１の領域のみを２層以上にメタライズ層を積層して構成することで、底面部６１に対して搭載されたＩＣチップ３の接続端子３１の高さの５０％以上の高さを確保し、引回電極８２、および電極パターン７（電極パッド７１と引回電極７２）より厚く形成している。   Specifically, in the second embodiment, when the electrode pattern 8 is formed by metallization, only the region of the electrode pad 81 is formed by laminating two or more metallization layers, thereby mounting on the bottom surface portion 61. The height of the connection terminal 31 of the IC chip 3 is 50% or more, and is thicker than the routing electrode 82 and the electrode pattern 7 (electrode pad 71 and routing electrode 72).

なお、実施例２では図５に示す変形例に示すように、ＩＣチップ３の電気的接続を行うためのそれぞれのワイヤＷが接続される電極パッド８１の位置については、搭載されたＩＣチップ３の接続端子３１に対して水晶振動片２の存在しない向きに偏らせて位置設定されていてもよい。このため、ワイヤＷの一端部（ＩＣチップとの接続端部）から他端部（ベースとの接続部）の配線を水晶振動片２の存在しない方向に偏向させることができる。つまり、全てのワイヤＷが水晶振動片２から遠ざかる向きに配線されているので、水晶振動片２とＩＣチップ３とを近接配置したとしても、水晶振動片２を搭載する際に搭載ノズルなどがワイヤＷに接触する危険性が格段におさえられ、水晶振動片２とＩＣチップ３のより安定した安全な実装構造が得られる。   In the second embodiment, as shown in the modification shown in FIG. 5, the positions of the electrode pads 81 to which the wires W for electrical connection of the IC chip 3 are connected are set on the mounted IC chip 3. The position of the connection terminal 31 may be set so as to be biased in a direction in which the crystal vibrating piece 2 does not exist. For this reason, it is possible to deflect the wiring from one end portion (connection end portion to the IC chip) of the wire W to the other end portion (connection portion to the base) in a direction where the crystal vibrating piece 2 does not exist. That is, since all the wires W are routed away from the crystal vibrating piece 2, even when the crystal vibrating piece 2 and the IC chip 3 are arranged close to each other, a mounting nozzle or the like is used when the crystal vibrating piece 2 is mounted. The risk of contact with the wire W is greatly reduced, and a more stable and safe mounting structure of the crystal vibrating piece 2 and the IC chip 3 can be obtained.

上述の実施例２により、ベース４のキャビティ６の底面部６１（第1平面）には、水晶振動片２とＩＣチップ３とがお互いに重畳しないように搭載することで、水晶振動片２とＩＣチップ３の搭載位置を近接することができ、お互いを接続ライン（配線パターン等）も短くすることができるので不要ノイズの影響がないより性能の高い水晶発振器が得られる。またＩＣチップ３をワイヤＷで接続する際に水晶振動片２が障壁となることもない。このような水晶発振器では小型化や低背化に起因してワイヤＷを接続する際に不具合が生じやすくなるという特有の問題があった。本発明の実施例２ではワイヤＷの他端部が接続されるベース４の電極パッド８１が、ベース４の底面部６１より高く、ベースの接合領域４３より低い位置に形成されているので、ＩＣチップ３の接続電極３１とベース４の電極パッド８１とをワイヤＷで電気的に接続する場合に、ＩＣチップ３の上端部とワイヤＷが接触することなく、より安定した状態でワイヤボンディングすることができる。また、ワイヤＷの他端部が接続されるベース４の電極パッド８１が、ベース４の底面部６１より高く、ベースの接合領域４３より低い位置でワイヤボンディングすることで、ＩＣチップ３の接続電極３１とベース４の電極パッド８１の距離を近接した状態で配置形成してもワイヤボンディングが安定した状態で行え、かつＩＣチップ３の接続電極３１と電気的に接続されるワイヤＷの一端部からワイヤＷの頂点までの高さが低い状態でワイヤボンディングしても安定した状態で行える。結果として、水晶振動片２とＩＣチップ３とを重畳させずに搭載するとともにＩＣチップ３をワイヤボンディングによりベース４の電極パッド８１と接続する水晶発振器に対して、ＩＣチップ３とベース４の電極パッド８１とのワイヤＷによる接続を安定化するとともにさらなる小型化と低背化が容易になる。   According to the above-described second embodiment, the crystal vibrating piece 2 and the IC chip 3 are mounted on the bottom surface portion 61 (first plane) of the cavity 6 of the base 4 so as not to overlap each other. Since the mounting positions of the IC chip 3 can be close to each other and the connection lines (wiring patterns, etc.) can be shortened, a crystal oscillator with higher performance without the influence of unnecessary noise can be obtained. Further, when the IC chip 3 is connected by the wire W, the crystal vibrating piece 2 does not become a barrier. In such a crystal oscillator, there is a specific problem that a problem is likely to occur when the wire W is connected due to a reduction in size and height. In the second embodiment of the present invention, the electrode pad 81 of the base 4 to which the other end of the wire W is connected is formed at a position higher than the bottom surface portion 61 of the base 4 and lower than the bonding region 43 of the base. When the connection electrode 31 of the chip 3 and the electrode pad 81 of the base 4 are electrically connected by the wire W, the upper end portion of the IC chip 3 and the wire W are not in contact with each other and wire bonding is performed in a more stable state. Can do. Further, the electrode pad 81 of the base 4 to which the other end portion of the wire W is connected is wire-bonded at a position higher than the bottom surface portion 61 of the base 4 and lower than the bonding region 43 of the base 4. Even if the electrode pad 81 of the base 4 and the electrode pad 81 of the base 4 are arranged close to each other, wire bonding can be performed in a stable state and from one end of the wire W that is electrically connected to the connection electrode 31 of the IC chip 3 Even if wire bonding is performed in a state where the height to the apex of the wire W is low, it can be performed in a stable state. As a result, the electrodes of the IC chip 3 and the base 4 are mounted on the crystal oscillator in which the crystal vibrating piece 2 and the IC chip 3 are mounted without overlapping and the IC chip 3 is connected to the electrode pad 81 of the base 4 by wire bonding. The connection with the pad 81 by the wire W is stabilized, and further downsizing and low profile are facilitated.

また、ＩＣチップ３と厚肉のベース４の電極パッド８１を近接配置することでワイヤＷの接続も近接して行えるとともに、ＩＣチップ３が搭載される周囲の内部収納部を広く形成することができるので、ワイヤボンディングする際のボンディングツールの挿入を妨げることなく安定したワイヤＷの接続が行える。またＩＣチップ３と水晶振動片２もより近接した状態でお互いに接続し配置することができる。結果として、ＩＣチップ３とベース４の電極パッド８１とのワイヤＷの接続を安定化するとともに水晶発振器の小型化と低背化を妨げることもない。   Further, by arranging the IC chip 3 and the electrode pad 81 of the thick base 4 close to each other, the connection of the wires W can be made close to each other, and the surrounding internal storage portion on which the IC chip 3 is mounted can be widely formed. Therefore, the wire W can be stably connected without hindering the insertion of the bonding tool during wire bonding. In addition, the IC chip 3 and the crystal vibrating piece 2 can be connected to each other in a closer state. As a result, the connection of the wire W between the IC chip 3 and the electrode pad 81 of the base 4 is stabilized and the size and height of the crystal oscillator are not hindered.

なお、本発明は、その精神や主旨または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施例はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均など範囲に属する変形や変更は、全て本発明の範囲内のものである。   It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the scope of the claims are within the scope of the present invention.

本発明は、水晶発振器などの圧電発振器に適用できる。   The present invention can be applied to a piezoelectric oscillator such as a crystal oscillator.

１ 表面実装型水晶発振器
２ 水晶振動片
３ ＩＣチップ
４ ベース
５ 蓋
Ｄ１ 導電性接着剤
Ｄ２ 高硬化性接合材
Ｗ ワイヤ DESCRIPTION OF SYMBOLS 1 Surface mount type crystal oscillator 2 Crystal vibrating piece 3 IC chip 4 Base 5 Lid D1 Conductive adhesive D2 High hardening bonding material W Wire

Claims (2)

圧電振動片と電子部品と、開口部と内部収納部が形成されたベースと、前記ベースの開口部を覆う蓋とを有し、ベースの開口部に蓋を被せて気密封止してなる圧電発振器であって、
前記ベースの内部収納部の同一平面である第１平面に前記圧電振動片と電子部品とがお互いに重畳しないように搭載し、前記圧電振動片は導電性接合材を介してベースの電極に電気的に接合されるとともに、電子部品はワイヤの一端部で電子部品の電極と電気的に接続され、ワイヤの他端部でベースの電極と電気的に接続されており、
前記ベースの内部収納部で、少なくとも前記電子部品と前記圧電振動片がお互いに隣接する領域を除いた電子部品が搭載される周囲の領域には、前記ベースの第１平面より高く、ベースの開口部より低い第２平面を有しており、電子部品と圧電振動片が隣接する領域には前記第２平面が存在しない開口部を有しており、当該第２平面上面にはワイヤの他端部が接続される電極が形成されてなることを特徴とする圧電発振器。 A piezoelectric vibration element, an electronic component, a base having an opening and an internal storage portion, and a lid that covers the opening of the base, and the base opening is covered and hermetically sealed. An oscillator,
The piezoelectric vibrating piece and the electronic component are mounted on a first plane which is the same plane of the internal storage portion of the base so as not to overlap each other, and the piezoelectric vibrating piece is electrically connected to the electrode of the base via a conductive bonding material. The electronic component is electrically connected to the electrode of the electronic component at one end of the wire and electrically connected to the base electrode at the other end of the wire,
In the inner storage portion of the base, at least a region around the electronic component excluding a region where the electronic component and the piezoelectric vibrating piece are adjacent to each other is higher than the first plane of the base, and the opening of the base A second plane that is lower than the second plane, and an opening in which the second plane does not exist in a region where the electronic component and the piezoelectric vibrating piece are adjacent to each other. A piezoelectric oscillator comprising an electrode to which a portion is connected. 圧電振動片と電子部品と、開口部と内部収納部が形成されたベースと、前記ベースの開口部を覆う蓋とを有し、ベースの開口部に蓋を被せて気密封止してなる圧電発振器であって、
前記ベースの内部収納部の同一平面である第１平面に前記圧電振動片と電子部品とがお互いに重畳しないように搭載し、前記圧電振動片は導電性接合材を介してベースの電極に電気的に接合されるとともに、電子部品はワイヤの一端部で電子部品の電極と電気的に接続され、ワイヤの他端部でベースの電極と電気的に接続されており、
前記ワイヤの他端部が接続されるベースの第１平面の電極の厚みが、他の第１平面の電極より厚く形成されたことを特徴とする圧電発振器。 A piezoelectric vibration element, an electronic component, a base having an opening and an internal storage portion, and a lid that covers the opening of the base, and the base opening is covered and hermetically sealed. An oscillator,
The piezoelectric vibrating piece and the electronic component are mounted on a first plane which is the same plane of the internal storage portion of the base so as not to overlap each other, and the piezoelectric vibrating piece is electrically connected to the electrode of the base via a conductive bonding material. The electronic component is electrically connected to the electrode of the electronic component at one end of the wire and electrically connected to the base electrode at the other end of the wire,
The piezoelectric oscillator according to claim 1, wherein a thickness of an electrode on a first plane of a base to which the other end of the wire is connected is formed thicker than an electrode on another first plane.
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