JP2007234960A - Electronic device, and its manufacturing method - Google Patents

Electronic device, and its manufacturing method Download PDF

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JP2007234960A
JP2007234960A JP2006056341A JP2006056341A JP2007234960A JP 2007234960 A JP2007234960 A JP 2007234960A JP 2006056341 A JP2006056341 A JP 2006056341A JP 2006056341 A JP2006056341 A JP 2006056341A JP 2007234960 A JP2007234960 A JP 2007234960A
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base
side pad
wire
electronic device
bump
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JP4765673B2 (en
JP2007234960A5 (en
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Kazuhiko Shimodaira
和彦 下平
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Miyazaki Epson Corp
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Miyazaki Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic device which is low-profile and is stably manufactured without damaging its IC chip, and to provide its manufacturing method. <P>SOLUTION: The electronic device is composed of an IC chip 14 which has a pad 16 on the component side on its top and is arranged on a package base 20, a pad 26 on the base side which is arranged on the package base 20, a conductive bump 40 which is arranged on the pad 26 on the base side, and a wire 42 which is arranged between the pad 16 on the component side and the bump 40 for conduction of electricity between them. Further, when the bump 40 is multitiered, the lowermost bump 40 on the pad 26 on the base side can be bonded to the pad 26 on the base side more firmly than the other bumps 40. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は電子デバイスおよびその製造方法に係り、特にベースと、このベース上に設けられた電子部品とにワイヤを接合して導通させた電子デバイスおよびその製造方法に関する。   The present invention relates to an electronic device and a method for manufacturing the same, and more particularly, to an electronic device in which a wire is bonded to a base and an electronic component provided on the base to be conducted and a method for manufacturing the electronic device.

近年、電子機器が小型化されているのに伴い、これに搭載される電子デバイスに低背化が要求されている。この電子デバイスとしては、例えば圧電デバイスがあげられる。圧電デバイスは、例えば次のような構成になっている。すなわち圧電デバイスは、凹陥部が設けられたパッケージベースを有している。この凹陥部の底面に集積回路（ＩＣ）チップが搭載され、また凹陥部の側面に設けられた階段部上にベース側パッドが設けられている。そしてＩＣチップの主面（上面）に設けられた部品側パッドとベース側パッドにワイヤが接合されている。なお部品側パッドは、ベース側パッドよりも上方に位置している。またＩＣチップの上方に圧電振動片が配設されている。そしてパッケージベースの上面に蓋体が接合されて、凹陥部が封止されている。   In recent years, as electronic devices have been downsized, electronic devices mounted thereon are required to be reduced in height. An example of this electronic device is a piezoelectric device. The piezoelectric device has the following configuration, for example. That is, the piezoelectric device has a package base provided with a recess. An integrated circuit (IC) chip is mounted on the bottom surface of the recessed portion, and a base-side pad is provided on a stepped portion provided on the side surface of the recessed portion. A wire is bonded to a component side pad and a base side pad provided on the main surface (upper surface) of the IC chip. The component side pad is located above the base side pad. A piezoelectric vibrating piece is disposed above the IC chip. A lid is bonded to the upper surface of the package base to seal the recess.

ところで通常のワイヤボンディングは、まず部品側パッド上にワイヤの一端を接合し（第１ボンディング）、ワイヤを上方に引上げた後、ワイヤを側方に引き出してベース側パッドにワイヤの他端を接合（第２ボンディング）している。図５は従来のワイヤの状態を説明する図である。この通常のワイヤボンディングを行うと、圧電デバイス１の低背化の要求に応じてＩＣチップ２と圧電振動片３の間隔を狭めた場合、図５（Ａ）に示されるようにワイヤ４が圧電振動片３の下面に接触してしまう。またワイヤ４と圧電振動片３の接触を防止するためにワイヤ４のループを低くした場合は、図５（Ｂ）に示されるように、ＩＣチップ２の角部とワイヤ４が接触してしまう。   By the way, in normal wire bonding, first, one end of the wire is bonded onto the component side pad (first bonding), the wire is pulled upward, and then the wire is pulled out to the side to bond the other end of the wire to the base side pad. (Second bonding). FIG. 5 is a diagram for explaining the state of a conventional wire. When this normal wire bonding is performed, when the distance between the IC chip 2 and the piezoelectric vibrating piece 3 is reduced in response to a request for reducing the height of the piezoelectric device 1, the wire 4 is piezoelectric as shown in FIG. It will contact the lower surface of the resonator element 3. Further, when the loop of the wire 4 is lowered in order to prevent the contact between the wire 4 and the piezoelectric vibrating piece 3, as shown in FIG. 5B, the corner portion of the IC chip 2 and the wire 4 come into contact with each other. .

これを解決するためには、逆ボンディングを行うことが考えられる。この逆ボンディングは、まずベース側パッドにワイヤの一端を接合し（第１ボンディング）、この後ワイヤの他端を部品側パッドに接合する（第２ボンディング）工程である。なお逆ボンディングについて開示されたものとしては特許文献１，２がある。しかし、この逆ボンディングでは、ワイヤボンディングを行うキャピラリの押圧が部品側パッドに直接加わることになるので、ＩＣチップに損傷が生じてしまう。   In order to solve this, reverse bonding can be considered. This reverse bonding is a step in which one end of the wire is first bonded to the base side pad (first bonding), and then the other end of the wire is bonded to the component side pad (second bonding). Patent Documents 1 and 2 disclose the reverse bonding. However, in this reverse bonding, the pressure of the capillary for performing wire bonding is directly applied to the component-side pad, so that the IC chip is damaged.

このため、キャピラリの押圧が部品側パッドに直接加わるのを防ぐために、図５（Ｃ）に示されるように、まず部品側パッド５の上にバンプ６を形成し、次にベース側パッド７にワイヤ４の一端を接合し（第１ボンディング）、この後ワイヤ４の他端をバンプ６上に接合（第２ボンディング）すればよい。なお、このような方法について開示されたものとして特許文献３があげられる。
特開昭６３−２４４６３３号公報（第４図） 特開２０００−１１４８７６号公報（段落００１２） 特開平３−２３３９４６号公報 Therefore, in order to prevent the capillary pressure from being directly applied to the component side pad, as shown in FIG. 5C, first, the bump 6 is formed on the component side pad 5, and then the base side pad 7 is applied. One end of the wire 4 may be bonded (first bonding), and then the other end of the wire 4 may be bonded onto the bump 6 (second bonding). Patent Document 3 is disclosed as such a method.
JP 63-244633 A (FIG. 4) JP 2000-114876 A (paragraph 0012) JP-A-3-233946

ところが部品側パッド上にバンプを形成し、その後逆ボンディングによりワイヤを接合する方法であっても、キャピラリの押圧がＩＣチップ上に複数回加わるので、その回数によっては部品側パッドに損傷が生じ、ＩＣチップ自体にも損傷が生じるおそれがある。   However, even if the bump is formed on the component side pad and then the wire is joined by reverse bonding, the capillary is pressed several times on the IC chip. Depending on the number of times, the component side pad is damaged, The IC chip itself may be damaged.

本発明は、低背化され、且つ、ＩＣチップに損傷が生じることなく安定して製造される電子デバイスおよびその製造方法を提供することを目的とする。   It is an object of the present invention to provide an electronic device that is reduced in height and that is stably manufactured without causing damage to an IC chip, and a method for manufacturing the electronic device.

本発明に係る電子デバイスは、部品側パッドが上面に設けられた電子部品をベース上に配設し、ベース上にベース側パッドを設け、ベース側パッド上に導電性部材を設け、部品側パッドと導電性部材とにこれらを導通させるワイヤを設けた、ことを特徴としている。   The electronic device according to the present invention includes an electronic component having a component-side pad provided on the upper surface, a base-side pad provided on the base, a conductive member provided on the base-side pad, and a component-side pad. And a conductive member provided with a wire for conducting them.

これによりベース側パッドの高さを導電性部材によって高くできるので、ワイヤのループを高く形成しなくともワイヤと電子部品の接触を防止できる。またワイヤのループを低く形成できるので、電子デバイスを低背化することができる。さらにベース側パッドの高さを導電性部材によって高くしているので、通常のワイヤボンディングを行う順番、すなわち第１ボンディングを電子部品に行うことができる。このためボンディングを行うキャピラリによって電子部品が損傷を受けることを防止でき、電子デバイスを安定して製造することができる。   As a result, the height of the base-side pad can be increased by the conductive member, so that contact between the wire and the electronic component can be prevented without forming a high wire loop. In addition, since the wire loop can be formed low, the height of the electronic device can be reduced. Further, since the height of the base-side pad is increased by the conductive member, the order in which normal wire bonding is performed, that is, the first bonding can be performed on the electronic component. For this reason, it can prevent that an electronic component is damaged with the capillary which performs bonding, and can manufacture an electronic device stably.

そして前述した導電性部材は、積層方向に多段に設けられたことを特徴としている。導電性部材を多段にすることでベース側パッドをかさ上げする高さを調整することができ、電子部品の上面と導電性部材の最上面との高さを同じまたは同程度にすることができる。したがってワイヤのループをより低く形成できるので、電子デバイスをより低背化することができる。またワイヤと電子部品が接触するのを確実に防止できる。   The conductive member described above is provided in multiple stages in the stacking direction. The height of raising the base side pad can be adjusted by making the conductive member multi-stage, and the height of the upper surface of the electronic component and the uppermost surface of the conductive member can be the same or similar. . Therefore, since the wire loop can be formed lower, the height of the electronic device can be further reduced. Moreover, it can prevent reliably that a wire and an electronic component contact.

また本発明に係る電子デバイスは、周波数信号を出力する圧電振動片をベースに設け、電子部品は、圧電振動片を発振させる回路を備え、圧電振動片と導通している、ことを特徴としている。これにより圧電デバイスを構成することができる。そして圧電振動片と電子部品が積層方向に配置されている場合であっても、また圧電振動片と電子部品が平面方向に配置されている場合であってもワイヤのループを低く形成できるので、圧電デバイスを低背化することができる。   The electronic device according to the present invention is characterized in that a piezoelectric vibrating piece that outputs a frequency signal is provided in a base, and the electronic component includes a circuit that oscillates the piezoelectric vibrating piece and is electrically connected to the piezoelectric vibrating piece. . Thereby, a piezoelectric device can be constituted. Even when the piezoelectric vibrating piece and the electronic component are arranged in the stacking direction, and even when the piezoelectric vibrating piece and the electronic component are arranged in the plane direction, the wire loop can be formed low, The piezoelectric device can be reduced in height.

また本発明に係る電子デバイスは、圧電振動片と電子部品とを積層方向に配置し、電子部品の上面と圧電振動片の下面との間にワイヤを設けたことを特徴としている。ワイヤのループを低く形成できるので、圧電振動片と電子部品の間隔を狭めることができる。よって圧電デバイスを低背化することができる。また圧電振動片と電子部品が積層方向に配置されているので、圧電デバイスの平面サイズを小型化することができる。   The electronic device according to the present invention is characterized in that the piezoelectric vibrating piece and the electronic component are arranged in the stacking direction, and a wire is provided between the upper surface of the electronic component and the lower surface of the piezoelectric vibrating piece. Since the wire loop can be formed low, the distance between the piezoelectric vibrating piece and the electronic component can be reduced. Accordingly, the height of the piezoelectric device can be reduced. In addition, since the piezoelectric vibrating piece and the electronic component are arranged in the stacking direction, the planar size of the piezoelectric device can be reduced.

そして前述したベースは凹陥部を有し、この凹陥部の側面に階段部を設け、凹陥部の底面に電子部品を配設し、部品側パッドよりも低い位置にある階段部の上面にベース側パッドを設けたことを特徴としている。これにより前述したようにワイヤのループを低く形成できるので、電子デバイスを低背化することができる。また階段部は、電子部品よりも低く形成されている。このため電子部品を搭載する際に用いられるコレットがベースに接触するのを防止できるので、電子デバイスの平面方向のサイズを小型化することができる。   The base described above has a recessed portion, a stepped portion is provided on the side surface of the recessed portion, an electronic component is disposed on the bottom surface of the recessed portion, and the base side is placed on the upper surface of the stepped portion located at a position lower than the component side pad. It is characterized by providing a pad. As a result, the wire loop can be formed low as described above, so that the electronic device can be reduced in height. The staircase portion is formed lower than the electronic component. For this reason, the collet used when mounting the electronic component can be prevented from coming into contact with the base, so that the size of the electronic device in the planar direction can be reduced.

また本発明に係る電子デバイスの製造方法は、ベース上に電子部品を搭載し、ベース上に形成されたベース側パッド上に導電性部材を配置し、ベース側パッドよりも高い位置にあり、電子部品の上面に形成された部品側パッドにワイヤの一端を接合し、導電性部材にワイヤの他端を接合する、ことを特徴としている。   The electronic device manufacturing method according to the present invention includes mounting an electronic component on a base, disposing a conductive member on a base-side pad formed on the base, and being higher than the base-side pad. One end of the wire is bonded to the component side pad formed on the upper surface of the component, and the other end of the wire is bonded to the conductive member.

これによりベース側パッドの高さを導電性部材によって高くできるので、ワイヤのループを高く形成しなくともワイヤと電子部品の接触を防止できる。またワイヤのループを低く形成できるので、電子デバイスを低背化することができる。さらに第１ボンディングを部品側パッドに行うことができるので、ボンディングを行うキャピラリによって部品側パッドおよび電子部品が損傷を受けることを防止でき、安定して電子デバイスを製造することができる。   As a result, the height of the base-side pad can be increased by the conductive member, so that contact between the wire and the electronic component can be prevented without forming a high wire loop. In addition, since the wire loop can be formed low, the height of the electronic device can be reduced. Further, since the first bonding can be performed on the component-side pad, it is possible to prevent the component-side pad and the electronic component from being damaged by the capillary for bonding, and it is possible to manufacture the electronic device stably.

また本発明に係る電子デバイスの製造方法は、前述した導電性部材をバンプとし、このバンプを積層方向に多段に配置し、ベース側パッド上にある最下のバンプを他のバンプに比べて強くベース側パッドに接合することを特徴としている。これにより最下のバンプとベース側パッドとを確実に接合できるので、バンプがベース側パッドに接合できなかったり、バンプがベース側パッドから剥がれたりすることを防止できる。またバンプを重ねる数によってバンプ全体の高さを調整することができ、電子部品の上面とバンプの最上面との高さを同じまたは同程度にすることができる。したがってワイヤのループをより低く形成できるので、電子デバイスをより低背化することができる。   The electronic device manufacturing method according to the present invention uses the conductive member described above as a bump, arranges the bump in multiple layers in the stacking direction, and the lowermost bump on the base-side pad is stronger than the other bumps. It is characterized by bonding to the base side pad. As a result, the lowermost bump and the base-side pad can be reliably bonded, so that it is possible to prevent the bump from being bonded to the base-side pad or the bump from being peeled off from the base-side pad. Further, the height of the entire bump can be adjusted by the number of bumps to be stacked, and the height of the upper surface of the electronic component and the uppermost surface of the bump can be made the same or similar. Therefore, since the wire loop can be formed lower, the height of the electronic device can be further reduced.

以下に、本発明に係る電子デバイスおよびその製造方法の最良の実施形態について説明する。なお以下では、電子デバイスの一例として圧電デバイスを用いた形態について説明する。
図１は圧電デバイスの断面図である。圧電デバイス１０は、ＩＣチップ１４（電子部品）および圧電振動片１８が搭載されるパッケージベース２０（ベース）を有している。具体的には、パッケージベース２０は、底面上の周囲に側壁部が設けられることによって、上方に向かって開口した凹陥部２２が形成されている。この凹陥部２２の側面は階段状に形成されており、下側階段部２４および上側階段部２８が設けられている。この下側階段部２４の上面にベース側パッド２６が設けられている。なおベース側パッド２６は複数設けられているが、図１では１つだけ示されている。また上側階段部２８の上面にマウント電極３０が設けられている。そしてベース側パッド２６の一部とマウント電極３０が導通している。 Hereinafter, an electronic device and a method for manufacturing the same according to the present invention will be described. In the following, a mode using a piezoelectric device as an example of an electronic device will be described.
FIG. 1 is a cross-sectional view of a piezoelectric device. The piezoelectric device 10 has a package base 20 (base) on which an IC chip 14 (electronic component) and a piezoelectric vibrating piece 18 are mounted. Specifically, the package base 20 is provided with a recessed portion 22 opened upward by providing a side wall portion around the bottom surface. The side surface of the recessed portion 22 is formed in a step shape, and a lower step portion 24 and an upper step portion 28 are provided. A base side pad 26 is provided on the upper surface of the lower stepped portion 24. A plurality of base side pads 26 are provided, but only one is shown in FIG. A mount electrode 30 is provided on the upper surface of the upper stepped portion 28. A part of the base side pad 26 and the mount electrode 30 are electrically connected.

そして凹陥部２２の底面は、ＩＣチップ１４の平面方向の大きさと、ＩＣチップ１４の搭載精度とを考慮した面積を少なくとも有していればよい。また下側階段部２４と上側階段部２８の間に形成される凹陥部２２の側面同士の間隔Ａは、図２に示されるように、コレット３６の平面方向の大きさと、ＩＣチップ１４の搭載精度とを考慮した間隔を少なくとも有していればよい。なおコレット３６は、ＩＣチップ１４を吸着保持する治具であり、ＩＣチップ１４をパッケージベース２０に搭載するときに用いられる。   The bottom surface of the recessed portion 22 only needs to have at least an area in consideration of the size of the IC chip 14 in the planar direction and the mounting accuracy of the IC chip 14. Further, as shown in FIG. 2, the distance A between the side surfaces of the recessed portion 22 formed between the lower stepped portion 24 and the upper stepped portion 28 is the size of the collet 36 in the plane direction and the mounting of the IC chip 14. It is only necessary to have at least an interval in consideration of accuracy. The collet 36 is a jig that holds the IC chip 14 by suction, and is used when the IC chip 14 is mounted on the package base 20.

また図１に示されるように、パッケージベース２０の裏面に外部端子３２が設けられている。この外部端子３２は、マウント電極３０に接続していないベース側パッド２６と導通している。   As shown in FIG. 1, external terminals 32 are provided on the back surface of the package base 20. The external terminal 32 is electrically connected to the base side pad 26 that is not connected to the mount electrode 30.

そしてＩＣチップ１４は、主面（上面）に部品側パッド１６を備えている。このＩＣチップ１４は、主面を上方に向けて凹陥部２２の底面に配設されている。ＩＣチップ１４がパッケージベース２０に搭載されると、部品側パッド１６（ＩＣチップ１４の主面）は、ベース側パッド２６よりも上方に位置しているとともに、マウント電極３０よりも下方に位置している。このＩＣチップ１４は、圧電振動片１８を発振させる回路を備えていればよい。なおＩＣチップ１４は、圧電振動片１８から出力される周波数信号の周波数を可変させるための電圧制御回路や、圧電振動片１８の周囲温度に応じて発振周波数を補正するための温度補償回路等を備えることもできる。   The IC chip 14 includes component-side pads 16 on the main surface (upper surface). The IC chip 14 is disposed on the bottom surface of the recessed portion 22 with the main surface facing upward. When the IC chip 14 is mounted on the package base 20, the component-side pad 16 (the main surface of the IC chip 14) is positioned above the base-side pad 26 and positioned below the mount electrode 30. ing. The IC chip 14 only needs to include a circuit that oscillates the piezoelectric vibrating piece 18. The IC chip 14 includes a voltage control circuit for changing the frequency of the frequency signal output from the piezoelectric vibrating piece 18, a temperature compensation circuit for correcting the oscillation frequency according to the ambient temperature of the piezoelectric vibrating piece 18, and the like. It can also be provided.

またベース側パッド２６の上面に導電性部材（バンプ４０）が設けられている。このバンプ４０は、図１に示されるように多段に設けられていてもよく、１段だけ設けられていてもよい。このバンプ４０は、ベース側パッド２６の高さをかさ上げするために用いられる。そしてバンプ４０の高さは、部品側パッド１６（ＩＣチップ１４の主面）と同じ高さまたは同程度の高さであるのが好ましい。   In addition, a conductive member (bump 40) is provided on the upper surface of the base side pad 26. The bumps 40 may be provided in multiple stages as shown in FIG. 1, or only one stage may be provided. The bump 40 is used to raise the height of the base side pad 26. The height of the bump 40 is preferably the same height as the component-side pad 16 (main surface of the IC chip 14) or about the same height.

このバンプ４０と部品側パッド１６にワイヤ４２が接合されて、これらが導通している。なおワイヤ４２は、最上段に位置するバンプ４０の上に接合されていればよい。これにより外部端子３２とＩＣチップ１４とが導通する。   Wires 42 are joined to the bumps 40 and the component-side pads 16 so that they are electrically connected. The wire 42 only needs to be bonded onto the bump 40 located at the uppermost stage. Thereby, the external terminal 32 and the IC chip 14 are electrically connected.

また圧電振動片１８は、導電性接着剤４４によってマウント電極３０上に搭載され、ＩＣチップ１４と導通している。これにより圧電振動片１８とＩＣチップ１４は積層方向（図１では上下方向）に配置されている。この圧電振動片１８は、電気信号が供給されると発振して、この発振周波数を有する信号（周波数信号）を出力するものである。なおワイヤ４２は、圧電振動片１８の下面とＩＣチップ１４の主面との間にあるので、圧電振動片１８またはＩＣチップ１４に接触することはない。   The piezoelectric vibrating piece 18 is mounted on the mount electrode 30 by the conductive adhesive 44 and is electrically connected to the IC chip 14. Thereby, the piezoelectric vibrating piece 18 and the IC chip 14 are arranged in the stacking direction (vertical direction in FIG. 1). The piezoelectric vibrating piece 18 oscillates when an electrical signal is supplied, and outputs a signal having this oscillation frequency (frequency signal). Since the wire 42 is between the lower surface of the piezoelectric vibrating piece 18 and the main surface of the IC chip 14, it does not contact the piezoelectric vibrating piece 18 or the IC chip 14.

またパッケージベース２０の上にシームリング等の接合材４６を介して蓋体４８が接合されている。これにより凹陥部２２は気密封止されている。   Further, a lid 48 is joined to the package base 20 via a joining material 46 such as a seam ring. As a result, the recessed portion 22 is hermetically sealed.

次に、圧電デバイス１０の製造方法について説明する。まずパッケージベース２０を形成する。このパッケージベース２０は、例えば枠幅の異なる複数の枠型絶縁シートを平板絶縁シート上に積層することにより形成される。なおベース側パッド２６やマウント電極３０、外部端子３２は、例えば枠型絶縁シートや平板絶縁シートの上にメタライズ印刷をした後、このメタライズ上にメッキを施すことにより形成される。   Next, a method for manufacturing the piezoelectric device 10 will be described. First, the package base 20 is formed. The package base 20 is formed, for example, by laminating a plurality of frame type insulating sheets having different frame widths on a flat plate insulating sheet. The base-side pad 26, the mount electrode 30, and the external terminal 32 are formed by, for example, performing metallization printing on a frame type insulating sheet or a flat plate insulating sheet and then plating on the metallization.

この後、パッケージベース２０に設けられた凹陥部２２の底面上にＩＣチップ１４が搭載される。これは図２に示されるように、コレット３６の下面に設けられた角錐形状（側面断面視して三角形）の吸着部でＩＣチップ１４を吸着保持し、これをパッケージベース２０の上方に移動させ、その後ＩＣチップ１４を凹陥部２２の底面上に搭載している。   Thereafter, the IC chip 14 is mounted on the bottom surface of the recessed portion 22 provided in the package base 20. As shown in FIG. 2, the IC chip 14 is sucked and held by a pyramid-shaped suction portion (triangle when viewed from the side) provided on the lower surface of the collet 36, and moved above the package base 20. Thereafter, the IC chip 14 is mounted on the bottom surface of the recessed portion 22.

なお凹陥部２２の開口は、コレット３６が接触することのない最低限の大きさを有しているので、この搭載時にコレット３６とパッケージベース２０が接触することはない。すなわち下側階段部２４と上側階段部２８の間における凹陥部２２の側面の間隔Ａは、コレット３６の平面方向の大きさとＩＣチップ１４の搭載精度とを考慮した最低限の間隔を有していればよいので、コレット３６と凹陥部２２の側面とが接触することはない。また凹陥部２２の側面に形成される下側階段部２４の高さは低く形成されているので、コレット３６と下側階段部２４が接触することはない。   Since the opening of the recessed portion 22 has a minimum size that the collet 36 does not contact, the collet 36 and the package base 20 do not contact at the time of mounting. That is, the distance A between the side surfaces of the recessed portion 22 between the lower stepped portion 24 and the upper stepped portion 28 has a minimum distance considering the size of the collet 36 in the planar direction and the mounting accuracy of the IC chip 14. Therefore, the collet 36 and the side surface of the recessed portion 22 do not come into contact with each other. Further, since the lower stepped portion 24 formed on the side surface of the recessed portion 22 is formed at a low height, the collet 36 and the lower stepped portion 24 do not contact each other.

この後、ベース側パッド２６の上にバンプ４０を設ける。このバンプ４０は、コレット３６との接触を防止するために下側階段部２４が低く形成されているので、ベース側パッド２６の高さをかさ上げするために形成される。そしてバンプ４０は、例えばワイヤボンディングを行うキャピラリの先端において、このキャピラリから出ているワイヤ４２を溶かしてボール形状にし、超音波や熱、荷重等を加えることによりこのボールをベース側パッド２６に溶着し、このボールをワイヤ４２から切り離して形成される。そして、これを繰り返し行うことで、多段バンプ４０が形成される。   Thereafter, bumps 40 are provided on the base side pads 26. The bump 40 is formed to raise the height of the base side pad 26 because the lower step 24 is formed low in order to prevent contact with the collet 36. For example, the bump 40 is welded to the base side pad 26 by applying ultrasonic waves, heat, load or the like by melting the wire 42 coming out from the capillary at the tip of the capillary for wire bonding. The ball is formed separately from the wire 42. Then, by repeating this, the multi-stage bump 40 is formed.

なお多段バンプ４０を形成する場合、ベース側パッド２６の直上に形成されるバンプ４０（最下のバンプ）を通常よりも強く溶着し、その上に形成される他のバンプ４０を通常通り溶着することができる。ベース側パッド２６直上のバンプ４０（最下のバンプ）を強く溶着する理由は以下の通りである。すなわちパッケージベース２０を保管しているときには、ベース側パッド２６の表面に様々な汚染物質が付く。この汚染物質は、例えば酸化物やメッキの残さである。ベース側パッド２６の表面に汚染物質が付いていると、ボンディング時に通常用いられている超音波や熱、荷重等を加えてもバンプ４０（前記ボール）を接合できない。このため、通常よりも強い超音波や高い熱、大きな荷重等を加えて最下のバンプ４０をベース側パッド２６の上に溶着すると汚染物質が取り除かれるので、バンプ４０とベース側パッド２６の接合強度を向上させることができる。そして最下のバンプ４０の上に形成される他のバンプ４０は、通常通りの超音波や熱、荷重等を加えることで形成することができる。   When the multi-stage bump 40 is formed, the bump 40 (lowermost bump) formed immediately above the base-side pad 26 is welded more strongly than usual, and the other bumps 40 formed thereon are welded as usual. be able to. The reason for strongly welding the bump 40 (lowermost bump) immediately above the base side pad 26 is as follows. That is, when the package base 20 is stored, various contaminants are attached to the surface of the base-side pad 26. This contaminant is, for example, oxide or plating residue. If a contaminant is attached to the surface of the base side pad 26, the bump 40 (the ball) cannot be bonded even if an ultrasonic wave, heat, load, or the like that is normally used at the time of bonding is applied. For this reason, when the lowermost bump 40 is welded onto the base-side pad 26 by applying a stronger ultrasonic wave, higher heat, larger load, etc. than usual, the contaminants are removed, so that the bump 40 and the base-side pad 26 are joined. Strength can be improved. The other bumps 40 formed on the lowermost bumps 40 can be formed by applying normal ultrasonic waves, heat, loads, and the like.

この後、通常のワイヤボンディングにより、ワイヤ４２の一端が部品側パッド１６に接合され（第１ボンディング）、ワイヤ４２の他端がバンプ４０上に接合される（第２ボンディング）。すなわちキャピラリの先端から出ているワイヤ４２をボール形状にした後、このボールをＩＣチップ１４に設けられた部品側パッド１６の上に溶着する。そしてワイヤ４２を上方に引き出した後、側方に引き出してバンプ４０の上にワイヤ４２を溶着し、ワイヤ４２を切断する。   Thereafter, one end of the wire 42 is bonded to the component-side pad 16 (first bonding) and the other end of the wire 42 is bonded to the bump 40 (second bonding) by normal wire bonding. That is, after the wire 42 protruding from the tip of the capillary is formed into a ball shape, this ball is welded onto the component side pad 16 provided on the IC chip 14. Then, after the wire 42 is pulled out upward, the wire 42 is pulled out to the side, and the wire 42 is welded onto the bump 40, and the wire 42 is cut.

なおバンプ４０やワイヤ４２の材料は、ベース側パッド２６の表面材料と同じであってもよい。一例としては、ベース側パッド２６の表面が金メッキされていれば、金バンプや金ワイヤを用いればよい。これによりベース側パッド２６とバンプ４０の接合強度およびバンプ４０とワイヤ４２の接合強度が向上する。またベース側パッド２６の上にバンプ４０を形成する装置と、ＩＣチップ１４とバンプ４０とにワイヤ４２を接合する装置とは別々の装置である必要はなく、一つの装置でバンプ形成とワイヤ接合を兼用してもよい。   The material of the bump 40 and the wire 42 may be the same as the surface material of the base side pad 26. As an example, if the surface of the base side pad 26 is gold-plated, gold bumps or gold wires may be used. Thereby, the bonding strength between the base-side pad 26 and the bump 40 and the bonding strength between the bump 40 and the wire 42 are improved. Further, the apparatus for forming the bumps 40 on the base side pads 26 and the apparatus for bonding the wires 42 to the IC chip 14 and the bumps 40 do not have to be separate apparatuses. May also be used.

この後、マウント電極３０の上に導電性接着剤４４が塗布され、この導電性接着剤４４の上に圧電振動片１８が搭載される。これにより圧電振動片１８がパッケージベース２０に搭載される。この後、パッケージベース２０の上に接合材４６を介して蓋体４８が接合される。このようにして圧電デバイス１０が形成される。   Thereafter, a conductive adhesive 44 is applied on the mount electrode 30, and the piezoelectric vibrating piece 18 is mounted on the conductive adhesive 44. As a result, the piezoelectric vibrating piece 18 is mounted on the package base 20. Thereafter, the lid body 48 is bonded onto the package base 20 via the bonding material 46. In this way, the piezoelectric device 10 is formed.

このような圧電デバイス１０およびその製造方法によれば、ベース側パッド２６の上にバンプ４０を設けて、このベース側パッド２６の高さをかさ上げしている。このため通常の第１ボンディングと第２ボンディングの順番により、ワイヤループを高くせずに部品側パッド１６とバンプ４０にワイヤ４２を接合しても、ワイヤ４２とＩＣチップ１４が接触するのを防止できる。またワイヤ４２のループを低くできるので、圧電振動片１８とＩＣチップ１４の間隔を狭めてもワイヤ４２と圧電振動片１８が接触するのを防止できる。したがって圧電振動片１８とＩＣチップ１４の間隔を狭めることにより、圧電デバイス１０を低背化できる。またＩＣチップ１４や圧電振動片１８とワイヤ４２とが接触することがないので、高信頼性の圧電デバイス１０を得ることができる。   According to the piezoelectric device 10 and the manufacturing method thereof, the bump 40 is provided on the base side pad 26, and the height of the base side pad 26 is raised. For this reason, even if the wire 42 is bonded to the component side pad 16 and the bump 40 without increasing the wire loop by the normal order of the first bonding and the second bonding, the contact between the wire 42 and the IC chip 14 is prevented. it can. Further, since the loop of the wire 42 can be lowered, it is possible to prevent the wire 42 and the piezoelectric vibrating piece 18 from contacting each other even if the interval between the piezoelectric vibrating piece 18 and the IC chip 14 is reduced. Therefore, the height of the piezoelectric device 10 can be reduced by narrowing the interval between the piezoelectric vibrating piece 18 and the IC chip 14. Further, since the IC chip 14 or the piezoelectric vibrating piece 18 and the wire 42 do not come into contact with each other, the highly reliable piezoelectric device 10 can be obtained.

また多段のバンプ４０を形成した場合、最下のバンプ４０を他のバンプ４０に比べて強くベース側パッド２６に接合すれば、ベース側パッド２６の表面に付いている汚染物質を取り除くことができる。このためバンプ４０がベース側パッド２６から剥がれ難くなり、高信頼性の圧電デバイス１０を得ることができる。   Further, when the multi-stage bump 40 is formed, if the lowermost bump 40 is bonded to the base side pad 26 more strongly than the other bumps 40, the contaminants attached to the surface of the base side pad 26 can be removed. . For this reason, the bumps 40 are difficult to peel off from the base-side pad 26, and the highly reliable piezoelectric device 10 can be obtained.

また第１ボンディングを行う場合、キャピラリから出ているワイヤ４２の先端をボール形状にしている。このため第１ボンディングを行うためにＩＣチップ１４（部品側パッド１６）の上にキャピラリを下ろしても、キャピラリの押圧がボールを介してＩＣチップ１４（部品側パッド１６）に伝わるので、この押圧がＩＣチップ１４（部品側パッド１６）に直接加わることがない。そしてＩＣチップ１４には、第１ボンディングを行うために１回だけキャピラリによる押圧が加えられる。このため部品側パッド１６に損傷が生じるのを防ぐことができるとともに、ＩＣチップ１４に損傷が生じるのを防ぐことができる。そしてＩＣチップ１４に不良が発生するのを防止でき、圧電デバイス１０を安定して製造することができる。   When performing the first bonding, the tip of the wire 42 coming out from the capillary is formed into a ball shape. For this reason, even if the capillary is lowered onto the IC chip 14 (component side pad 16) for performing the first bonding, the pressure of the capillary is transmitted to the IC chip 14 (component side pad 16) via the ball. Is not directly applied to the IC chip 14 (component side pad 16). The IC chip 14 is pressed by the capillary only once for the first bonding. For this reason, it is possible to prevent the component-side pad 16 from being damaged and to prevent the IC chip 14 from being damaged. Further, it is possible to prevent the IC chip 14 from being defective, and the piezoelectric device 10 can be manufactured stably.

また凹陥部２２の開口は、キャピラリを入れることができる最低限の大きさを有していればよいので、圧電デバイス１０の平面サイズを小型化することができる。なお圧電デバイス１０の平面サイズを小型化した場合であっても、下側階段部２４の高さを低くしているので、コレット３６と下側階段部２４が接触することはない。   Moreover, since the opening of the recessed part 22 should just have the minimum magnitude | size which can put a capillary, the plane size of the piezoelectric device 10 can be reduced in size. Even when the plane size of the piezoelectric device 10 is reduced, the collet 36 and the lower stepped portion 24 do not come into contact with each other because the height of the lower stepped portion 24 is lowered.

そして前述した実施形態では圧電デバイス１０を例にして説明したが、本発明にあってはこれに限定されることはない。すなわち電子デバイスは、例えば図３に示される構成にすることができる。この電子デバイス５０は、パッケージベース２０（ベース）を有している。このパッケージベース２０に凹陥部２２が設けられており、この凹陥部２２の底面にベース側パッド２６が設けられている。またパッケージベース２０の裏面に、ベース側パッド２６と導通する外部端子３２が設けられている。このパッケージベース２０に設けられた凹陥部２２の底面上にＩＣチップ１４（電子部品）が搭載されるとともに、ベース側パッド２６の上にバンプ４０（導電性部材）が設けられている。   In the above-described embodiment, the piezoelectric device 10 has been described as an example. However, the present invention is not limited to this. That is, the electronic device can be configured as shown in FIG. 3, for example. The electronic device 50 has a package base 20 (base). The package base 20 is provided with a recessed portion 22, and a base-side pad 26 is provided on the bottom surface of the recessed portion 22. An external terminal 32 that is electrically connected to the base-side pad 26 is provided on the back surface of the package base 20. The IC chip 14 (electronic component) is mounted on the bottom surface of the recess 22 provided in the package base 20, and the bump 40 (conductive member) is provided on the base side pad 26.

そしてＩＣチップ１４の主面に設けられた部品側パッド１６にワイヤ４２の一端が接合され、バンプ４０の上にワイヤ４２の他端が接合されている。なおワイヤボンディングは、通常通り第１ボンディングとしてワイヤ４２の一端を部品側パッド１６に接合した後、第２ボンディングとしてワイヤ４２の他端をバンプ４０に接合すればよい。そして、このパッケージベース２０の上に蓋体４８が設けられている。これによりワイヤ４２のループを低く形成できるので、ＩＣチップ１４の主面と蓋体４８の下面との距離を縮めて電子デバイス５０を低背化することができる。   One end of the wire 42 is bonded to the component side pad 16 provided on the main surface of the IC chip 14, and the other end of the wire 42 is bonded to the bump 40. In wire bonding, as usual, one end of the wire 42 is bonded to the component-side pad 16 as the first bonding, and then the other end of the wire 42 is bonded to the bump 40 as the second bonding. A lid 48 is provided on the package base 20. As a result, the loop of the wire 42 can be formed low, so that the distance between the main surface of the IC chip 14 and the lower surface of the lid 48 can be reduced to reduce the height of the electronic device 50.

また電子デバイスは、図４（Ａ）に示される構成にすることもできる。この電子デバイス５２は、平板状の基板５４（ベース）を有している。この基板５４には、ベース側パッド２６がその上面に設けられるとともに、ベース側パッド２６と導通する外部端子３２がその下面に設けられている。そしてＩＣチップ１４（電子部品）が基板５４の上面に搭載され、またベース側パッド２６の上にバンプ４０（導電性部材）が設けられている。このＩＣチップ１４の主面に設けられた部品側パッド１６にワイヤ４２の一端が接合され、バンプ４０の上にワイヤ４２の他端が接合されている。このワイヤボンディングは、図３の例と同様に第１ボンディングおよび第２ボンディングを行えばよい。そしてＩＣチップ１４やバンプ４０、ワイヤ４２の周囲がモールド樹脂５６等で封止されている。これによりワイヤ４２のループを低く形成できるので、ＩＣチップ１４の主面とモールド樹脂５６の上面との距離を縮めて電子デバイス５２を低背化することができる。   In addition, the electronic device can have a structure illustrated in FIG. The electronic device 52 has a flat substrate 54 (base). The substrate 54 is provided with a base-side pad 26 on its upper surface and an external terminal 32 that is electrically connected to the base-side pad 26 on its lower surface. The IC chip 14 (electronic component) is mounted on the upper surface of the substrate 54, and the bump 40 (conductive member) is provided on the base side pad 26. One end of the wire 42 is bonded to the component side pad 16 provided on the main surface of the IC chip 14, and the other end of the wire 42 is bonded to the bump 40. In this wire bonding, the first bonding and the second bonding may be performed as in the example of FIG. The periphery of the IC chip 14, the bump 40, and the wire 42 is sealed with a mold resin 56 or the like. As a result, the loop of the wire 42 can be formed low, so that the distance between the main surface of the IC chip 14 and the upper surface of the mold resin 56 can be reduced to reduce the height of the electronic device 52.

さらに電子デバイス（圧電デバイス）は、図４（Ｂ）に示される構成にすることもできる。圧電デバイス５８は、裏面に外部端子６０が設けられた圧電振動子６２（ベース）を有している。この圧電振動子６２は圧電振動片（不図示）を収容しており、前記圧電振動片と外部端子６０が導通している。そして圧電振動子６２の裏面にＩＣチップ１４が搭載されるとともに、リード端子６４が接合されている。この外部端子６０およびリード端子６４の上にバンプ４０（導電性部材）が設けられている。   Further, the electronic device (piezoelectric device) can be configured as shown in FIG. The piezoelectric device 58 has a piezoelectric vibrator 62 (base) having an external terminal 60 provided on the back surface. The piezoelectric vibrator 62 accommodates a piezoelectric vibrating piece (not shown), and the piezoelectric vibrating piece and the external terminal 60 are electrically connected. The IC chip 14 is mounted on the back surface of the piezoelectric vibrator 62, and lead terminals 64 are joined. A bump 40 (conductive member) is provided on the external terminal 60 and the lead terminal 64.

そしてＩＣチップ１４の主面に設けられた部品側パッド１６にワイヤ４２の一端が接合され、バンプ４０の上にワイヤ４２の他端が接合されて、圧電振動子６２やリード端子６４とＩＣチップ１４とが導通されている。このワイヤボンディングは、図３の例と同様に第１ボンディングおよび第２ボンディングを行えばよい。この圧電振動子６２やＩＣチップ１４、ワイヤ４２、バンプ４０等の周囲はモールド樹脂５６等で封止されている。そしてリード端子６４は、モールド樹脂５６から露出した部分が下方に折り曲げられて、その先端部の下面が実装端子６６とされている。これによりワイヤ４２のループを低く形成できるので、ＩＣチップ１４の主面とモールド樹脂５６の上面との間隔を縮めて電子デバイス（圧電デバイス５８）を低背化することができる。   Then, one end of the wire 42 is joined to the component side pad 16 provided on the main surface of the IC chip 14, and the other end of the wire 42 is joined to the bump 40, so that the piezoelectric vibrator 62 and the lead terminal 64 are connected to the IC chip. 14 is conducted. In this wire bonding, the first bonding and the second bonding may be performed as in the example of FIG. The periphery of the piezoelectric vibrator 62, the IC chip 14, the wire 42, the bump 40, and the like are sealed with a mold resin 56 or the like. In the lead terminal 64, the portion exposed from the mold resin 56 is bent downward, and the lower surface of the tip portion is used as the mounting terminal 66. As a result, the loop of the wire 42 can be formed low, so that the distance between the main surface of the IC chip 14 and the upper surface of the mold resin 56 can be reduced to reduce the height of the electronic device (piezoelectric device 58).

なお上述した実施形態および変形例では、導電性部材としてバンプ４０を用いた構成であるが、ベース側パッド２６の高さをかさ上げするために用いられるのはバンプ４０に限定されることはない。すなわち導電性部材としては、導電性を有する材料や部品等を用いることができる。   In the above-described embodiment and modification, the bump 40 is used as the conductive member. However, the bump 40 is not limited to be used for raising the height of the base-side pad 26. . That is, as the conductive member, conductive materials, parts, and the like can be used.

圧電デバイスの断面図である。It is sectional drawing of a piezoelectric device. ＩＣチップをパッケージベースに搭載するときの説明図である。It is explanatory drawing when mounting an IC chip in a package base. 第１の変形例に係る電子デバイスの断面図である。It is sectional drawing of the electronic device which concerns on a 1st modification. 第２の変形例に係る電子デバイスの断面図である。It is sectional drawing of the electronic device which concerns on a 2nd modification. 従来のワイヤの状態を説明する図である。It is a figure explaining the state of the conventional wire.

符号の説明Explanation of symbols

１０………圧電デバイス、１４………ＩＣチップ、１６………部品側パッド、１８………圧電振動片、２０………パッケージベース、２２………凹陥部、２４………下側階段部、２６………ベース側パッド、２８………上側階段部、４０………バンプ、４２………ワイヤ。 10 ......... Piezoelectric device, 14 ......... IC chip, 16 ......... Part side pad, 18 ......... Piezoelectric vibrating piece, 20 ......... Package base, 22 ......... Recessed portion, 24 ......... Lower side Stairs, 26 ......... Base side pad, 28 ......... Upper staircase, 40 ...... Bump, 42 ......... Wire.

Claims (7)

部品側パッドが上面に設けられた電子部品をベース上に配設し、
前記ベース上にベース側パッドを設け、
前記ベース側パッド上に導電性部材を設け、
前記部品側パッドと前記導電性部材とにこれらを導通させるワイヤを設けた、
ことを特徴とする電子デバイス。 An electronic component having a component-side pad provided on the upper surface is disposed on the base,
A base side pad is provided on the base,
A conductive member is provided on the base side pad,
Provided a wire for conducting the component side pad and the conductive member,
An electronic device characterized by that. 前記導電性部材は、多段に設けられたことを特徴とする請求項１に記載の電子デバイス。   The electronic device according to claim 1, wherein the conductive member is provided in multiple stages. 周波数信号を出力する圧電振動片を前記ベースに設け、
前記電子部品は、圧電振動片を発振させる回路を備え、前記圧電振動片と導通している、
ことを特徴とする請求項１または２に記載の電子デバイス。 A piezoelectric vibrating piece for outputting a frequency signal is provided on the base,
The electronic component includes a circuit that oscillates a piezoelectric vibrating piece, and is electrically connected to the piezoelectric vibrating piece.
The electronic device according to claim 1, wherein the electronic device is an electronic device. 前記圧電振動片と前記電子部品とを積層方向に配置し、前記電子部品の上面と前記圧電振動片の下面との間に前記ワイヤを設けたことを特徴とする請求項３に記載の電子デバイス。   The electronic device according to claim 3, wherein the piezoelectric vibrating piece and the electronic component are arranged in a stacking direction, and the wire is provided between an upper surface of the electronic component and a lower surface of the piezoelectric vibrating piece. . 前記ベースは凹陥部を有し、前記凹陥部の側面に階段部を設け、前記凹陥部の底面に前記電子部品を配設し、前記部品側パッドよりも低い位置にある前記階段部の上面に前記ベース側パッドを設けたことを特徴とする請求項１ないし４のいずれかに記載の電子デバイス。   The base has a recessed portion, a stepped portion is provided on a side surface of the recessed portion, the electronic component is disposed on a bottom surface of the recessed portion, and the upper surface of the stepped portion is positioned lower than the component-side pad. The electronic device according to claim 1, wherein the base side pad is provided. ベース上に電子部品を搭載し、
前記ベース上に形成されたベース側パッド上に導電性部材を配置し、
前記ベース側パッドよりも高い位置にあり、前記電子部品の上面に形成された部品側パッドにワイヤの一端を接合し、
前記導電性部材に前記ワイヤの他端を接合する、
ことを特徴とする電子デバイスの製造方法。 Electronic components are mounted on the base,
Arranging a conductive member on a base-side pad formed on the base;
At one position higher than the base side pad, one end of the wire is joined to the component side pad formed on the upper surface of the electronic component,
Bonding the other end of the wire to the conductive member;
The manufacturing method of the electronic device characterized by the above-mentioned. 前記導電性部材をバンプとし、このバンプを多段に配置し、前記ベース側パッド上にある最下のバンプを他のバンプに比べて強く前記ベース側パッドに接合することを特徴とする請求項６に記載の電子デバイスの製造方法。   The conductive member is a bump, the bumps are arranged in multiple stages, and a lowermost bump on the base side pad is strongly bonded to the base side pad as compared with other bumps. The manufacturing method of the electronic device of description.
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JP2010283650A (en) * 2009-06-05 2010-12-16 Daishinku Corp Piezoelectric oscillator
US11784201B2 (en) 2020-02-28 2023-10-10 Canon Kabushiki Kaisha Package and semiconductor device

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JP2010283650A (en) * 2009-06-05 2010-12-16 Daishinku Corp Piezoelectric oscillator
US11784201B2 (en) 2020-02-28 2023-10-10 Canon Kabushiki Kaisha Package and semiconductor device

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