JP2010283040A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2010283040A
JP2010283040A JP2009133473A JP2009133473A JP2010283040A JP 2010283040 A JP2010283040 A JP 2010283040A JP 2009133473 A JP2009133473 A JP 2009133473A JP 2009133473 A JP2009133473 A JP 2009133473A JP 2010283040 A JP2010283040 A JP 2010283040A
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Japan
Prior art keywords
film
high dielectric
dielectric material
semiconductor device
hafnium
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Pending
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JP2009133473A
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English (en)
Japanese (ja)
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JP2010283040A5 (https=
Inventor
Hiroshi Nakagawa
博 中川
Jun Suzuki
純 鈴木
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Panasonic Corp
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Panasonic Corp
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Priority to JP2009133473A priority Critical patent/JP2010283040A/ja
Priority to PCT/JP2010/000103 priority patent/WO2010140278A1/ja
Publication of JP2010283040A publication Critical patent/JP2010283040A/ja
Publication of JP2010283040A5 publication Critical patent/JP2010283040A5/ja
Priority to US13/269,818 priority patent/US20120025326A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/693—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009133473A 2009-06-02 2009-06-02 半導体装置及びその製造方法 Pending JP2010283040A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009133473A JP2010283040A (ja) 2009-06-02 2009-06-02 半導体装置及びその製造方法
PCT/JP2010/000103 WO2010140278A1 (ja) 2009-06-02 2010-01-12 半導体装置及びその製造方法
US13/269,818 US20120025326A1 (en) 2009-06-02 2011-10-10 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009133473A JP2010283040A (ja) 2009-06-02 2009-06-02 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2010283040A true JP2010283040A (ja) 2010-12-16
JP2010283040A5 JP2010283040A5 (https=) 2011-07-28

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Family Applications (1)

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JP2009133473A Pending JP2010283040A (ja) 2009-06-02 2009-06-02 半導体装置及びその製造方法

Country Status (3)

Country Link
US (1) US20120025326A1 (https=)
JP (1) JP2010283040A (https=)
WO (1) WO2010140278A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116517A (ja) * 2012-12-11 2014-06-26 Tokyo Electron Ltd 金属化合物膜の成膜方法、成膜装置、電子製品の製造方法および電子製品
JP2023538535A (ja) * 2020-08-10 2023-09-08 東京エレクトロン株式会社 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629749B2 (en) 2017-11-30 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of treating interfacial layer on silicon germanium

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064032A (ja) * 2003-08-12 2005-03-10 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
JP2005251785A (ja) * 2004-03-01 2005-09-15 Nec Corp 半導体装置およびその製造方法
JP2005317647A (ja) * 2004-04-27 2005-11-10 Toshiba Corp 半導体装置及びその製造方法
WO2006057400A1 (ja) * 2004-11-29 2006-06-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法及び基板処理装置
JP2008072001A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2009038229A (ja) * 2007-08-02 2009-02-19 Nec Electronics Corp 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064032A (ja) * 2003-08-12 2005-03-10 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
JP2005251785A (ja) * 2004-03-01 2005-09-15 Nec Corp 半導体装置およびその製造方法
JP2005317647A (ja) * 2004-04-27 2005-11-10 Toshiba Corp 半導体装置及びその製造方法
WO2006057400A1 (ja) * 2004-11-29 2006-06-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法及び基板処理装置
JP2008072001A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2009038229A (ja) * 2007-08-02 2009-02-19 Nec Electronics Corp 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014116517A (ja) * 2012-12-11 2014-06-26 Tokyo Electron Ltd 金属化合物膜の成膜方法、成膜装置、電子製品の製造方法および電子製品
JP2023538535A (ja) * 2020-08-10 2023-09-08 東京エレクトロン株式会社 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法
JP7743144B2 (ja) 2020-08-10 2025-09-24 東京エレクトロン株式会社 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法
KR102941906B1 (ko) 2020-08-10 2026-03-19 도쿄엘렉트론가부시키가이샤 반도체 디바이스용 선택형 분극을 갖는 유전체 재료의 형성 방법
US12588434B2 (en) 2020-08-10 2026-03-24 Tokyo Electron Limited Methods for forming dielectric materials with selected polarization for semiconductor devices

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WO2010140278A1 (ja) 2010-12-09
US20120025326A1 (en) 2012-02-02

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