JP2010280987A - 蒸着装置及びその制御方法 - Google Patents
蒸着装置及びその制御方法 Download PDFInfo
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- JP2010280987A JP2010280987A JP2010125725A JP2010125725A JP2010280987A JP 2010280987 A JP2010280987 A JP 2010280987A JP 2010125725 A JP2010125725 A JP 2010125725A JP 2010125725 A JP2010125725 A JP 2010125725A JP 2010280987 A JP2010280987 A JP 2010280987A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000008021 deposition Effects 0.000 claims abstract description 166
- 239000000463 material Substances 0.000 claims abstract description 67
- 238000012546 transfer Methods 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims description 190
- 239000000758 substrate Substances 0.000 abstract description 27
- 239000000126 substance Substances 0.000 description 19
- 230000032258 transport Effects 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】被蒸着体に第1蒸着物質を蒸着するように設定された第1チャンバーと、被蒸着体に第1蒸着物質と異なる第2蒸着物質を蒸着するように設定された第2チャンバーと、被蒸着体に第1蒸着物質を蒸着するように設定された第3チャンバーと、第1チャンバーから第3チャンバーと連結され、被蒸着体を第1チャンバーから第3チャンバーのうち少なくとも一つのチャンバーに供給するように備えられた搬送チャンバーと、被蒸着体を、搬送チャンバーから、第1チャンバーから第3チャンバーのうち一つのチャンバーへ移送させて蒸着させる制御部と、を備える蒸着装置。
【選択図】図1
Description
2 第1クラスター
3 第2クラスター
4 第3クラスター
5 搬送チャンバー
5a 搬送機構
6 反応チャンバー
6a 予備チャンバー
7 ストックチャンバー
8 移動用バッファチャンバー
9 回転用バッファチャンバー
11 入口
12 出口
13 基板移送手段
14 基板支持部
15 装着台
20 蒸着源
100 基板
Claims (9)
- 被蒸着体に第1蒸着物質を蒸着するように設定された第1チャンバーと、
前記被蒸着体に前記第1蒸着物質と異なる第2蒸着物質を蒸着するように設定された第2チャンバーと、
前記被蒸着体に前記第1蒸着物質を蒸着するように設定された第3チャンバーと、
前記第1から第3チャンバーと連結され、前記被蒸着体を前記第1から第3チャンバーのうち少なくとも一つのチャンバーに供給するように備えられた搬送チャンバーと、
前記被蒸着体を、前記搬送チャンバーから前記第1から第3チャンバーのうち一つのチャンバーへ移送させて蒸着させる制御部と、
を備える蒸着装置。 - 前記制御部は、前記被蒸着体を前記搬送チャンバーから前記第1チャンバーまたは前記第3チャンバーへ選択的に移送させて蒸着させることを特徴とする請求項1に記載の蒸着装置。
- 前記制御部は、前記被蒸着体を前記搬送チャンバーから前記第1チャンバーと前記第3チャンバーとへ順次に移送させて蒸着させることを特徴とする請求項1に記載の蒸着装置。
- 被蒸着体に相異なる物質を蒸着するように設定された複数の蒸着チャンバーと、
前記蒸着チャンバーのうちいずれか一つと同じ条件で設定された予備チャンバーと、
前記被蒸着体を前記蒸着チャンバーまたは予備チャンバーのうちいずれか一つへ投入させて蒸着を進める制御部と、
を備える蒸着装置。 - 前記制御部は、前記被蒸着体を前記蒸着チャンバーと予備チャンバーとへ順次に投入させて蒸着を進めることを特徴とする請求項4に記載の蒸着装置。
- 第3チャンバーを第1チャンバーと同じ条件で設定するステップと、
第1被蒸着体を第1チャンバーに供給し、第1蒸着物質を蒸着するステップと、
前記第1被蒸着体を第2チャンバーに供給し、前記第1蒸着物質と異なる第2蒸着物質を蒸着するステップと、
第2被蒸着体を前記第1チャンバーまたは第3チャンバーに供給し、前記第1蒸着物質を蒸着するステップと、
前記第2被蒸着体を第2チャンバーに供給し、前記第1蒸着物質と異なる第2蒸着物質を蒸着するステップと、
を含む蒸着装置の制御方法。 - 前記第2被蒸着体は、前記第3チャンバーに供給されて前記第1蒸着物質を蒸着されるものであり、前記第1チャンバーの蒸着条件を調整することをさらに含むことを特徴とする請求項6に記載の蒸着装置の制御方法。
- 前記第2被蒸着体は、前記第1チャンバーまたは第3チャンバーのうち蒸着条件の設定が完了したチャンバーに供給されて、前記第1蒸着物質を蒸着するものであることを特徴とする請求項6に記載の蒸着装置の制御方法。
- 前記第1被蒸着体を第1チャンバーに供給し、前記第1蒸着物質を蒸着するステップの後に、
前記第1被蒸着体を前記第3チャンバーに供給し、第1蒸着物質を蒸着するステップをさらに含み、
前記第2被蒸着体は、前記第1チャンバー及び第3チャンバーへ順次に供給され、第1蒸着物質を蒸着するものであることを特徴とする請求項6に記載の蒸着装置の制御方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0048648 | 2009-06-02 | ||
KR1020090048648A KR101146981B1 (ko) | 2009-06-02 | 2009-06-02 | 증착 장치 및 그 제어 방법 |
Publications (2)
Publication Number | Publication Date |
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JP2010280987A true JP2010280987A (ja) | 2010-12-16 |
JP5258842B2 JP5258842B2 (ja) | 2013-08-07 |
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JP2010125725A Active JP5258842B2 (ja) | 2009-06-02 | 2010-06-01 | 蒸着装置及びその制御方法 |
Country Status (4)
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US (1) | US20100304025A1 (ja) |
JP (1) | JP5258842B2 (ja) |
KR (1) | KR101146981B1 (ja) |
CN (1) | CN101906608B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015023179A (ja) * | 2013-07-19 | 2015-02-02 | 三菱電機株式会社 | 半導体装置の製造方法および製造装置 |
Families Citing this family (9)
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US20120244685A1 (en) * | 2011-03-24 | 2012-09-27 | Nuflare Technology, Inc. | Manufacturing Apparatus and Method for Semiconductor Device |
CN102994983A (zh) * | 2011-09-15 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mocvd设备和利用该mocvd形成白光led的方法 |
KR101876306B1 (ko) * | 2012-07-02 | 2018-07-10 | 주식회사 원익아이피에스 | 기판 처리 시스템 및 그 제어 방법 |
KR102141205B1 (ko) * | 2013-08-16 | 2020-08-05 | 삼성디스플레이 주식회사 | 박막 봉지 제조 장치 및 이를 이용한 표시 장치의 제조 방법 |
KR101673016B1 (ko) * | 2013-08-27 | 2016-11-07 | 삼성디스플레이 주식회사 | 박막봉지 제조장치 및 이를 이용한 표시 장치의 제조방법 |
KR102426712B1 (ko) | 2015-02-16 | 2022-07-29 | 삼성디스플레이 주식회사 | 표시 장치 제조 장치 및 표시 장치 제조 방법 |
KR102171476B1 (ko) * | 2017-07-04 | 2020-10-29 | 한국과학기술원 | 개시제를 이용한 화학 기상 증착의 다층 시스템 및 방법 |
CN110144551B (zh) * | 2019-07-04 | 2022-05-10 | 京东方科技集团股份有限公司 | 一种蒸镀设备及蒸镀方法 |
CN117096048A (zh) * | 2022-05-09 | 2023-11-21 | 华为技术有限公司 | 沉积装置 |
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-
2009
- 2009-06-02 KR KR1020090048648A patent/KR101146981B1/ko active IP Right Grant
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2010
- 2010-04-29 US US12/770,175 patent/US20100304025A1/en not_active Abandoned
- 2010-06-01 CN CN201010193925.4A patent/CN101906608B/zh active Active
- 2010-06-01 JP JP2010125725A patent/JP5258842B2/ja active Active
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Publication number | Publication date |
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CN101906608B (zh) | 2015-09-09 |
CN101906608A (zh) | 2010-12-08 |
JP5258842B2 (ja) | 2013-08-07 |
US20100304025A1 (en) | 2010-12-02 |
KR101146981B1 (ko) | 2012-05-22 |
KR20100130005A (ko) | 2010-12-10 |
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