JP2010278315A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device whose structure is simplified and which can suppress heat conduction from an LED chip to an optical detection part having a light reception part for receiving part of light emitted by the LED chip although employing constitution wherein the optical detection part is provided to a mounting substrate in one body. <P>SOLUTION: The light emitting device includes the LED chip 1, the mounting substrate 2 where a storage recessed part 2b for storing the LED chip 1 is formed on one surface, the LED chip 1 is mounted, and the optical detection part 4 having the light reception part 4a for receiving part of the light emitted by the LED chip 1 is formed, and a lens part 3 (a light guide part for guiding part of the light emitted by the LED chip 1 to the light reception part 4a) which is provided on the one surface side of the mounting substrate 2 and controls distribution of the light emitted by the LED chip 1. The mounting substrate 2 has the optical detection part 4 formed on a silicon layer 10c on the one surface side of an SOI substrate 10, and also has the storage recessed part 2b formed deeply enough to reach a silicon layer 10a on the other surface side of the SOI substrate 10. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

  Conventionally, as shown in FIG. 4, the LED chip 1 and a package A that houses the LED chip 1 are provided, and the photodiode has a light receiving portion 4 a that receives a part of the light emitted from the LED chip 1. A light emitting device in which the light detection unit 4 is provided integrally with the package A has been proposed (see, for example, Patent Document 1).

  In the package A, the housing recess 2b ′ for housing the LED chip 1 is formed on one surface, and the mounting substrate 2 ′ on which the LED chip 1 is mounted, and the housing recess 2b on the one surface side of the mounting substrate 2 ′. The light-detecting portion 4 is formed in a protruding portion 2c ′ protruding inward from the peripheral portion of the housing recess 2b ′ in the mounting substrate 2 ′. The inside of the storage recess 2b is filled with a sealing portion 9 made of a light-transmitting sealing material (for example, silicone resin) that seals the LED chip 1.

  Here, the mounting substrate 2 ′ is formed using the silicon substrate 20a and the base substrate 20 on which the LED chip 1 is mounted, the silicon substrate 40a is used, the light extraction window 41 is formed, and the light detection unit 4 is formed. Is formed between the base substrate 20 and the photodetection unit forming substrate 40. The photodetection unit forming substrate 40 is formed with an opening window 31 that is formed using the silicon substrate 30a and communicates with the light extraction window 41. The light detection unit 4 is configured for external connection via a through hole wiring 34 formed in the light distribution substrate 30 and a through hole wiring 24 formed in the base substrate 20. It is electrically connected to the electrodes 27c and 27d. The LED chip 1 is electrically connected to an external connection electrode (not shown) through a through-hole wiring (not shown) formed in the base substrate 20.

  In the light emitting device having the configuration shown in FIG. 4 described above, the LED chip 1 emits the projection 2c ′ projecting inward from the peripheral portion of the housing recess 2b ′ that houses the LED chip 1 in the mounting substrate 2 ′. Since the light detecting portion 4 for detecting the light to be detected is formed, it is necessary to separately secure a space for arranging the light detecting portion 4 around the housing recess 2b ′ on the one surface side of the mounting substrate 2 ′. However, there is an advantage that the planar size can be reduced while the light detection unit 4 is provided on the mounting substrate 2 ′. In the light emitting device having the configuration shown in FIG. 4, the silicon substrate 40 a serving as the basis of the light detection unit forming substrate 40 has an n-type conductivity, and the light detection unit 4 receives light from the LED chip 1. The part 4a is constituted by a p-type region.

  Thus, for example, a light emitting device employing a red LED chip as the LED chip 1, a light emitting device employing a green LED chip as the LED chip 1, and a light emitting device employing a blue LED chip as the LED chip 1 are the same circuit. A drive circuit unit that is arranged close to the substrate and drives the LED chip 1 of each light-emitting device on the circuit board, and a drive circuit unit so that the output of each light detection unit 4 is maintained at the target value. By providing a control circuit unit that feedback-controls the current flowing from the LED chip 1 of each emission color to the light output of the LED chip 1 of each emission color based on the output of each light detection unit 4 It is possible to control the accuracy of the light color and color temperature of the mixed color light (here, white light) regardless of the temporal change in the light output of the LED chip 1 for each emission color. It can be. In short, desired mixed color light can be stably obtained. In Patent Document 1, in the light emitting device having the configuration shown in FIG. 4, the translucent member 8 is excited by light (for example, blue light) emitted from the LED chip 1 and is longer than the LED chip. By including a phosphor that emits light of a wavelength (for example, yellow light), it is possible to obtain mixed light (for example, white light) of the light from the LED chip 1 and the light from the phosphor. Are listed.

  Conventionally, as shown in FIG. 5, a light emitting element 101 made of a semiconductor laser chip and a housing recess 2b ″ for housing the light emitting element 101 are formed on one surface so that the light emitting element 101 is mounted and the light emitting element. There has been proposed a light-emitting device including a mounting substrate 2 ″ on which a light detection unit 4 made of a photodiode for detecting light emitted from 101 is formed (see Patent Document 2). Here, in the light emitting device having the configuration shown in FIG. 5, the mounting substrate 2 ″ is formed using one n-type silicon substrate 200, and the housing recess 2b ″ is formed by anisotropic etching. The opening area of the storage recess 2b ″ gradually increases as the distance from the inner bottom surface increases.

  Further, in the light emitting device having the configuration shown in FIG. 5, the light receiving portion 4a composed of the p-type region in the light detecting portion 4 is formed along the inner side surface of the housing recess 2b ″. In the light emitting device having the configuration, the insulating film 23 is formed across one surface of the n-type silicon substrate 200 and the inner bottom surface and the inner side surface of the housing recess 2b ″, and a portion of the insulating film 23 corresponding to the light receiving portion 4a. A metal film 190 ″ made of an Au film having a predetermined thickness (for example, 100 nm to 400 nm) that reflects part of the light from the light emitting element 101 and transmits part of the light is formed on the top. The one-dot chain line indicates the optical path of the light emitted from the light emitting element 101, and the broken line indicates the optical path of the light that passes through the metal film 19 ″ and is absorbed by the light receiving unit 4a.

JP 2007-294834 A JP-A-7-297480

  By the way, in the light emitting device having the configuration shown in FIG. 4, it is necessary to form the mounting substrate 2 ′ using the three silicon substrates 20a, 30a, and 40a, which complicates the structure and increases the cost. End up.

  In the light emitting device having the configuration shown in FIG. 5, the mounting substrate 2 ″ is formed using one n-type silicon substrate 200, and heat generated by the light emitting element 101 is transferred to the n-type silicon substrate 200. Since the heat is also transferred to the light detection unit 4, the temperature of the light detection unit 4 rises and the detection accuracy of the light detection unit 4 decreases, and the light emitting device having the configuration shown in FIG. Since the film 19 ″ needs to transmit part of the light from the light emitting element 101, the choice of material for the metal film 19 ″ is reduced and the light emission efficiency is lowered.

  The present invention has been made in view of the above-mentioned reasons, and its purpose is to adopt a configuration in which a light detection unit having a light receiving unit that receives a part of light emitted from an LED chip is integrally provided on a mounting substrate. However, an object of the present invention is to provide a light emitting device that can simplify the structure and can suppress heat transfer from the LED chip to the light detection unit.

  The invention according to claim 1 has an LED chip and a light receiving portion for receiving a part of the light emitted from the LED chip while the LED chip is mounted on the surface with a housing recess for housing the LED chip. A mounting substrate on which the light detection unit is formed, and a light guide unit that is provided on the one surface side of the mounting substrate and guides a part of the light emitted from the LED chip to the light receiving unit. It is formed using a single SOI substrate having an insulating layer in the middle, and a light detection portion is formed in a silicon layer on one surface side of the SOI substrate, and a storage recess is formed at a depth reaching at least the insulating layer. It is characterized by being made.

  According to the present invention, a mounting substrate in which a housing recess for housing an LED chip is formed on one surface, the LED chip is mounted, and a light detection unit having a light receiving unit that receives light emitted from the LED chip is formed. And a light guide part that is provided on the one surface side of the mounting substrate and guides a part of the light emitted from the LED chip to the light receiving part, so that a part of the light emitted from the LED chip is detected. In addition, the mounting substrate is formed using a single SOI substrate having an insulating layer in the middle in the thickness direction, and light is applied to the silicon layer on the one surface side of the SOI substrate. Since the detection part is formed and the housing recess is formed at a depth reaching at least the insulating layer, the light detection part having a light receiving part for receiving a part of the light emitted from the LED chip is integrated with the mounting substrate. Configuration provided in While employed, Hakare to simplify the structure, and, the heat transfer from the LED chip to the light detection section can be suppressed by preventing the insulating layer of the SOI substrate.

  According to a second aspect of the present invention, in the first aspect of the invention, the depth dimension of the storage recess is set larger than the total dimension of the silicon layer and the insulating layer on the one surface side of the SOI substrate. It is characterized by becoming.

  According to the present invention, it is possible to efficiently dissipate heat generated in the LED chip to the other surface side of the mounting substrate.

  According to a third aspect of the present invention, in the first aspect of the present invention, the depth dimension of the storage recess is set to be the same as the thickness dimension of the silicon layer on the one surface side of the SOI substrate. And

  According to this invention, when the storage recess is formed during manufacturing, the insulating layer of the SOI substrate can be used as an etching stopper layer, so that the accuracy of the depth dimension of the storage recess is improved. it can.

  According to a fourth aspect of the present invention, in the first to third aspects of the invention, the light receiving portion that receives light from the LED chip in the light detecting portion is the storage recess on the one surface side of the SOI substrate. And is formed along the one surface of the SOI substrate.

  According to this invention, compared with the case where the said light-receiving part is formed along the inner surface of the said storage recess in the said mounting substrate, the said light-receiving part can be formed easily.

  According to a fifth aspect of the present invention, in the invention of the fourth aspect, an opening area of the storage recess gradually increases as the distance from the inner bottom surface increases, and the mounting substrate includes the one surface side of the SOI substrate and the surface of the mounting substrate. A reflection film that reflects light emitted from the LED chip is formed on an inner surface side of the housing recess so as to avoid the light receiving portion.

  According to the present invention, the mounting substrate has a reflection film that reflects light emitted from the LED chip on the one surface side of the SOI substrate and the inner surface side of the housing recess, avoiding the light receiving unit. Since it is formed, the degree of freedom in selecting a material for the reflective film is high, absorption loss in the mounting substrate can be reduced, and light emission efficiency can be improved.

  According to a sixth aspect of the present invention, in the first to fifth aspects of the invention, the light guide unit is a lens unit that controls light distribution of light emitted from the LED chip, and is emitted from the LED chip. Formed of a light-transmitting material containing a phosphor that emits light having a wavelength longer than that of the LED chip when excited by the light, and between the lens portion and the light detection portion on the one surface side of the mounting substrate In addition, a translucent heat insulating portion that has translucency and heat insulating properties and prevents heat transfer from the phosphor to the light receiving portion is provided.

  According to the present invention, the light transmitted from the LED chip can be prevented from being transmitted to the light-receiving unit by heat caused by energy loss due to Stokes shift in the phosphor. Heat transfer from the phosphor to the light receiving portion can be suppressed while obtaining mixed color light of the light emitted from the phosphor and the light emitted from the phosphor.

  According to the first aspect of the present invention, the structure can be simplified while adopting a configuration in which the light detection unit for detecting a part of the light emitted from the LED chip is integrally provided on the mounting substrate, and from the LED chip. There is an effect that heat transfer to the light detection unit can be suppressed.

The light-emitting device of Embodiment 1 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. The light-emitting device of Embodiment 2 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. The light-emitting device of Embodiment 3 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. It is a schematic sectional drawing which shows a prior art example. It is a schematic sectional drawing which shows another prior art example.

(Embodiment 1)
As shown in FIG. 1, the light emitting device of the present embodiment has an LED chip 1 and a housing recess 2 b for housing the LED chip 1 formed on one surface so that the LED chip 1 is mounted and radiates from the LED chip 1. A light distribution of the light emitted from the LED chip 1 provided on the one surface side of the mounting substrate 2 and the mounting substrate 2 on which the light detecting portion 4 having the light receiving portion 4a for receiving a part of the emitted light is formed. And a lens unit 3 to be controlled.

  The mounting substrate 2 described above is formed by using a single SOI substrate 10 having an insulating layer 10b in the middle in the thickness direction. Here, the SOI substrate 10 includes a silicon oxide film between a silicon layer 10c on one surface side (upper surface side in FIG. 1A) and a silicon layer 10a on the other surface side (lower surface side in FIG. 1A). An insulating layer 10b made of is interposed, and the surface of the silicon layer 10c on the one surface side is a (100) plane. The silicon layer 10c on the one surface side of the SOI substrate 10 has an n-type conductivity.

  Further, the mounting substrate 2 has a depth at which the light detection portion 4 is formed in the silicon layer 10 c on the one surface side of the SOI substrate 10 and the storage recess 2 b reaches the silicon layer 10 a on the other surface side of the SOI substrate 10. It is formed with. In short, in the light emitting device of this embodiment, the depth dimension of the storage recess 2b is set to be larger than the total dimension of the silicon layer 10c and the insulating layer 10b on the one surface side of the SOI substrate 10.

  Here, the mounting substrate 2 is formed with two conductor patterns 15a and 15b electrically connected to both electrodes (not shown) of the LED chip 1 on the one surface side, and the light detection unit 4 Are formed on the other surface side (the lower surface side in FIG. 1A) of each of the conductor patterns 15a, 15b, 15c, 15d and the SOI substrate 10. The four external connection electrodes 17a, 17b, 17c, and 17d are electrically connected through the through-hole wiring 14, respectively. However, the two conductor patterns 15a and 15b that are electrically connected to the two electrodes of the LED chip 1 are formed on a portion formed on the inner bottom surface of the housing recess 2b in the insulating film 13 described later. Yes.

  The LED chip 1 in this embodiment is an LED chip that emits visible light (for example, red light, green light, blue light, etc.) by using a conductive substrate as a crystal growth substrate and electrodes formed on both sides in the thickness direction. is there. Therefore, the mounting substrate 2 has one of the two conductor patterns 15a and 15b to which the LED chip 1 is electrically connected, a rectangular die pad portion 15aa to which the LED chip 1 is die-bonded, and The lead-out wiring part 15ab is formed integrally with the die pad part 15aa and is connected to the through-hole wiring 14. In short, the LED chip 1 is die-bonded to the die pad portion 15aa of the one conductor pattern 15a, and the electrode on the die pad portion 15aa side is joined and electrically connected to the die pad portion 15aa. The opposite electrode is electrically connected to the other conductor pattern 15b via the bonding wire W1.

  Further, the mounting substrate 2 is formed with a rectangular heat radiation pad portion 18 made of a metal material having a higher thermal conductivity than the SOI substrate 10 on the other surface side of the SOI substrate 10. The pad portion 18 is thermally coupled to a plurality of (in this embodiment, nine) cylindrical thermal vias 16 made of a metal material (for example, Cu) having a higher thermal conductivity than the SOI substrate 10. The heat generated in the LED chip 1 is radiated through the thermal vias 16 and the heat radiating pad portions 18.

  By the way, the mounting substrate 2 is formed on the SOI substrate 10 with four through-holes 12a in which each of the four through-hole wirings 14 described above is formed and nine nine thermal vias 16 are formed on the inside. A through hole 12b is provided in the thickness direction, the one surface of the SOI substrate 10, the inner bottom surface and the inner surface of the storage recess 2b in the SOI substrate 10, the other surface of the SOI substrate 10, and the through holes 12a, 12b. The insulating film 13 made of a thermal oxide film (silicon oxide film) is formed across the inner surface, and each conductor pattern 15a, 15b, 15c, 15d, each external connection electrode 17a, 17b, 17c, 17d, The heat dissipation pad portion 18, each through-hole wiring 14, and each thermal via 16 are electrically insulated from the SOI substrate 10.

  Here, the conductor patterns 15a, 15b, 15c, 15d, the external connection electrodes 17a, 17b, 17c, 17d, and the heat dissipation pad 18 are formed on the Ti film formed on the insulating film 13 and the Ti film. Each conductive pattern 15a, 15b, 15c, 15d on the one surface side of the SOI substrate 10 is formed at the same time, and each external pattern on the other surface side of the SOI substrate 10 is formed by a laminated film with the formed Au film. Connection electrodes 17a, 17b, 17c, and 17d and a heat dissipation pad portion 18 are formed at the same time. In the present embodiment, the thickness of the Ti film on the insulating film 13 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples and are particularly limited. Not what you want. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. Further, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 13, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Further, although Cu is adopted as a material for the through-hole wiring 14 and the thermal via 16, it is not limited to Cu, and for example, Ni may be adopted.

  In addition, the mounting substrate 2 is formed with a photodiode as the above-described light detection unit 4. Here, in the light detection unit 4, the light receiving unit 4 a made of the p-type region of the photodiode is formed on the silicon layer 10 c on the one surface side of the SOI substrate 10, and the two conductor patterns 15 c and 15 d described above are formed. One of the conductor patterns 15c is electrically connected to the light receiving portion 4a, and the other conductor pattern 15d is electrically connected to the silicon layer 10c constituting the n-type region 4b of the photodiode. . The conductor patterns 15c and 15d are electrically connected to the light detection unit 4 through contact holes 13c and 13d formed in the insulating film 13.

  In addition, the light receiving unit 4 a that receives light from the LED chip 1 in the light detecting unit 4 is formed along the one surface of the SOI substrate 10 at the peripheral portion of the storage recess 2 b on the one surface side of the SOI substrate 10. ing. Thus, in the light emitting device of the present embodiment, the light receiving portion 4a is compared with the case where the light receiving portion 4a is formed along the inner surface of the housing recess 2b ″ in the mounting substrate 2 ″ as in the configuration shown in FIG. Can be easily formed. In addition, the planar view shape of the light-receiving part 4a is a frame shape (here, a rectangular frame shape) surrounding the housing recess 2b over the entire circumference.

  The housing recess 2b of the mounting substrate 2 is formed by wet anisotropic etching utilizing the crystal orientation dependence of the etching rate, and the opening area gradually increases as the distance from the inner bottom surface increases. Here, the mounting substrate 2 is formed on the one surface side of the SOI substrate 10 and the inner surface side of the housing recess 2b with a reflection film 19 that reflects light emitted from the LED chip 1 avoiding the light receiving portion 4a. ing. Here, as the material of the reflective film 19, a material having high reflectivity with respect to the light emitted from the LED chip 1 (for example, Al, Ag, etc.) may be appropriately selected. Thus, in the light emitting device of this embodiment, the mounting substrate 2 has the reflective film 19 that reflects the light emitted from the LED chip 1 on the one surface side of the SOI substrate 10 and the inner surface side of the housing recess 2b. Since it is formed so as to avoid the light receiving portion 4a, the degree of freedom in selecting the material of the reflective film 19 is high, the absorption loss in the mounting substrate 2 can be reduced, and the light emission efficiency can be improved.

  The lens unit 3 is formed of a translucent material (for example, silicone resin) and is a hemispherical shape that seals the LED chip 1 and the bonding wire W1 connected to the LED chip 1 on the one surface side of the mounting substrate 2. It is comprised by the lens-shaped sealing part. Here, the translucent material of the lens unit 3 is not limited to a silicone resin, and for example, an acrylic resin, an epoxy resin, a polycarbonate resin, glass, or the like may be employed. In addition, the shape of the lens unit 3 is not limited to a hemispherical shape, and may be a hemispherical spherical shape, for example. In the present embodiment, the mounting substrate 2 and the lens unit 3 constitute a package.

  In manufacturing the light emitting device of this embodiment, an SOI wafer capable of forming a large number of mounting substrates 2 is used as the SOI substrate 10 described above, the LED chip 1 is mounted on the mounting substrate 2, and then the lens unit 3 is formed. The substrate is divided into the size of the mounting substrate 2 by a dicing process.

  In the light emitting device of the present embodiment described above, the housing recess 2b for housing the LED chip 1 is formed on the one surface, the LED chip 1 is mounted, and a part of the light emitted from the LED chip 1 is received. A mounting substrate 2 on which a light detection unit 4 having a light receiving unit 4a is formed, and a lens unit 3 that is provided on the one surface side of the mounting substrate 2 and controls light distribution of light emitted from the LED chip 1 are provided. Therefore, a part of the light emitted from the LED chip 1 and reflected by the interface between the lens unit 3 and the air can be received by the light detection unit 4, and the mounting substrate 2 has an insulating layer in the middle in the thickness direction. In addition to the formation of one SOI substrate 10 having 10b, the photodetecting portion 4 is formed in the silicon layer 10c on the one surface side of the SOI substrate 10, and the depth dimension of the storage recess 2b is set to SOI. The above one of the substrate 10 Since it is set to be larger than the total size of the silicon layer 10c on the surface side and the insulating layer 10b, the light detection unit 4 having the light receiving unit 4a for receiving a part of the light emitted from the LED chip 1 is mounted on the mounting substrate 2. The structure can be simplified while the structure provided integrally with the LED chip 1 and the heat transfer from the LED chip 1 to the light detection unit 4 can be prevented and suppressed by the insulating layer 10b of the SOI substrate 10. It becomes. Therefore, in the light emitting device of this embodiment, the detection accuracy of the light detection unit 4 can be improved. In the present embodiment, the lens unit 3 constitutes a light guide unit that is provided on the one surface side of the mounting substrate 2 and guides part of the light emitted from the LED chip 1 to the light receiving unit 4a. Here, the light guide section only needs to be able to guide a part of the light emitted from the LED chip 1 to the light receiving section 4a, and is not necessarily formed in a lens shape like the lens section 3.

  Further, in the light emitting device of this embodiment, the depth dimension of the storage recess 2b is set larger than the total dimension of the silicon layer 10c and the insulating layer 10b on the one surface side of the SOI substrate 10, so that the LED The heat generated in the chip 1 can be efficiently radiated to the other surface side of the mounting substrate 2.

  In the light emitting device of this embodiment, since the light detection unit 4 is provided on the mounting substrate 2, for example, a light emitting device using a red LED chip as the LED chip 1 and a green LED chip as the LED chip 1 are used. The light emitting device and the light emitting device adopting the blue LED chip as the LED chip 1 are arranged close to each other on the same wiring board (circuit board), and the LED chip 1 of each light emitting apparatus is driven on the wiring board. Provide a drive circuit unit and a control circuit unit that feedback-controls the current flowing from the drive circuit unit to the LED chip 1 of each emission color so that the output of each light detection unit 4 is maintained at the respective target value. Thus, the light output of the LED chip 1 of each emission color can be controlled separately based on the output of each light detection unit 4, and the light output of the LED chip 1 for each emission color can be controlled. Time change difference etc. depending not mixed color light (in this case, white light) can be improved accuracy of the light color and color temperature. In short, desired mixed color light can be stably obtained.

(Embodiment 2)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 2, the depth dimension of the housing recess 2b in the mounting substrate 2 is the same as that on the one surface side of the SOI substrate 10. The difference is that it is set to be the same as the thickness dimension of the silicon layer 10c. Here, the thickness of each of the silicon layers 10a and 10c of the SOI substrate 10 may be appropriately set according to a desired depth dimension of the housing recess 2b defined based on the thickness of the LED chip 1 and the like. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

  Thus, according to the light emitting device of the present embodiment, the insulating layer 10b of the SOI substrate 10 can be used as an etching stopper layer when the storage recess 2b is formed during manufacturing. The accuracy of the depth dimension can be improved.

(Embodiment 3)
The basic configuration of the light emitting device of the present embodiment shown in FIG. 3 is substantially the same as that of the first embodiment, and the lens unit 3 is excited by the light emitted from the LED chip 1 and has a longer wavelength than the LED chip 1. Translucent materials containing phosphors (not shown) that emit light (for example, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, organic component and inorganic component are mixed and bonded at nm level or molecular level) Between the lens part 3 and the light detection part 4 on the one surface side of the mounting substrate 2 and having a light-transmitting property and a heat-insulating property. The point which the translucent heat insulation part 5 which prevents the heat transfer to 4a is provided is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

In the light emitting device of the present embodiment, for example, an LED chip that emits blue light is used as the LED chip 1, and the above-described phosphor is excited by the blue light emitted from the LED chip 1 and has a broad yellow color. If a particulate yellow phosphor that emits light is employed, the blue light emitted from the LED chip 1 and the light emitted from the yellow phosphor are emitted from the lens unit 3 to obtain white light. be able to. If glass is used as the translucent material of the lens unit 3, the thermal conductivity of the lens unit 3 is improved as compared with the case where an organic material such as silicone resin is used. the can be suppressed can suppress a decrease in quantum efficiency due to the temperature quenching of phosphor, moreover, with improved gas barrier properties and moisture impermeability against water vapor and NO _x, can suppress moisture absorption deterioration of the phosphor, trust And durability are improved. Further, the phosphor mixed with the translucent material used as the material of the lens unit 3 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor. Color rendering properties can be improved by using a phosphor and a green phosphor.

  The translucent heat insulating part 5 described above has a rectangular frame shape in plan view along the plan view shape of the light receiving part 4a and a cross-sectional shape formed in a semicircular shape. The shape is not particularly limited. Here, the material of the translucent heat insulating part 5 may be appropriately selected from silicone resin, acrylic resin, epoxy resin, polycarbonate resin, etc. according to the material of the lens part 3 and the material of the insulating film 13. .

  Thus, according to the light emitting device of the present embodiment, the translucent heat insulating portion 5 prevents heat caused by energy loss due to Stokes shift in the phosphor from being transferred to the light receiving portion 4a of the light detecting portion 4. Therefore, it is possible to obtain mixed color light of the light emitted from the LED chip 1 and the light emitted from the phosphor, while suppressing the heat transfer from the phosphor to the light receiving unit 4a. It is possible to improve the detection accuracy of the light detection unit 4.

  In addition, you may apply the lens part 3 and the translucent heat insulation part 5 of this embodiment to the light-emitting device of Embodiment 2. FIG. In short, the housing recess 2b of the mounting substrate 2 only needs to be formed at a depth that reaches at least the insulating layer 10b of the SOI substrate 10.

DESCRIPTION OF SYMBOLS 1 LED chip 2 Mounting board 2b Storage recess 3 Lens part (light guide part)
4 Photodetector 4a Light receiver 10 SOI substrate 10a Silicon layer 10b Insulating layer 10c Silicon layer

Claims (6)

  An LED chip and a housing recess for housing the LED chip are formed on one surface, the LED chip is mounted, and a light detection unit having a light receiving unit that receives a part of the light emitted from the LED chip is formed A mounting substrate; and a light guide portion that is provided on the one surface side of the mounting substrate and guides part of the light emitted from the LED chip to the light receiving portion. The mounting substrate has an insulating layer in the middle in the thickness direction. It is formed using a single SOI substrate, a light detection portion is formed in a silicon layer on one surface side of the SOI substrate, and a storage recess is formed at a depth reaching at least the insulating layer. Light-emitting device.   2. The light emitting device according to claim 1, wherein a depth dimension of the housing recess is set larger than a total dimension of the silicon layer and the insulating layer on the one surface side of the SOI substrate.   2. The light emitting device according to claim 1, wherein a depth dimension of the storage recess is set to be the same as a thickness dimension of the silicon layer on the one surface side of the SOI substrate.   The light receiving portion that receives light from the LED chip in the light detection portion is formed along the one surface of the SOI substrate at a peripheral portion of the storage recess on the one surface side of the SOI substrate. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.   The opening of the storage recess gradually increases as the distance from the inner bottom surface increases, and the mounting substrate radiates from the LED chip on the one surface side of the SOI substrate and the inner side surface of the storage recess. 5. The light emitting device according to claim 4, wherein a reflection film for reflecting the emitted light is formed so as to avoid the light receiving portion.   The light guide unit is a lens unit that controls light distribution of light emitted from the LED chip, and is excited by light emitted from the LED chip to emit light having a longer wavelength than the LED chip. It is formed of a translucent material containing a phosphor, and has a translucency and a heat insulating property between the lens unit and the light detection unit on the one surface side of the mounting substrate, from the phosphor to the light receiving unit. The light-emitting device according to claim 1, further comprising a light-transmitting heat insulating portion that prevents heat transfer.

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