JP2010263214A - 低キャパシタンスのフォトダイオード素子及び計算機式断層写真法検出器 - Google Patents
低キャパシタンスのフォトダイオード素子及び計算機式断層写真法検出器 Download PDFInfo
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- JP2010263214A JP2010263214A JP2010104703A JP2010104703A JP2010263214A JP 2010263214 A JP2010263214 A JP 2010263214A JP 2010104703 A JP2010104703 A JP 2010104703A JP 2010104703 A JP2010104703 A JP 2010104703A JP 2010263214 A JP2010263214 A JP 2010263214A
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- 238000002591 computed tomography Methods 0.000 title description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003574 free electron Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- MCVAAHQLXUXWLC-UHFFFAOYSA-N [O-2].[O-2].[S-2].[Gd+3].[Gd+3] Chemical compound [O-2].[O-2].[S-2].[Gd+3].[Gd+3] MCVAAHQLXUXWLC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
【解決手段】フォトダイオード素子(20)が、第一の拡散形式を有する第一の層と、第二の層とを含んでいる。第二の層は電荷収集域(29)を画定している。電荷収集域(29)は、第二の拡散形式の作用領域(32)と、非作用領域(33)とを含んでいる。作用領域(32)は非作用領域(33)を包囲している。フォトダイオード素子(20)はまた、第一の層と第二の層との間に真性半導体層を含んでいる。
【選択図】図3
Description
式中、CPはキャパシタンス係数であり、PTは作用領域(1又は複数)の全周長である。
12 シンチレータ・アレイ
14 フォトダイオード・アレイ
16 寸法
17 フォトダイオード素子
18 フォトダイオード・アレイ
19、20 フォトダイオード素子
22 第一の層
24 第二の層
26 真性半導体層
27 カソード
28 作用容積
29 電荷収集域
30 複数の非作用容積
31 アノード
32 作用領域
33 複数の非作用領域
34 グリッド
35、36、38 寸法
44 フォトダイオード素子
46 第一の層
47 カソード
48 第二の層
49 電荷収集域
50 真性半導体層
52 複数の作用容積
53 アノード
54 非作用容積
55 複数の作用領域
56 複数の伝導性(金属)接点
57 非作用領域
59 寸法
Claims (15)
- 第一の拡散形式を含む第一の層(22)と、
第二の拡散形式の作用領域(32)及び非作用領域(33)を含む電荷収集域(29)を画定する第二の層(24)であって、前記作用領域(32)は前記非作用領域(33)を包囲している、第二の層(24)と、
前記第一の層(22)と前記第二の層(24)との間に配設されている真性半導体層(26)と
を備えたフォトダイオード素子(20)。 - 前記作用領域(32)及び前記非作用領域(33)は、当該フォトダイオード素子(20)のキャパシタンスを低下させるように構成されている、請求項1に記載のフォトダイオード素子(20)。
- 前記第一の拡散形式はP+拡散を含んでいる、請求項1に記載のフォトダイオード素子(20)。
- 前記第二の拡散形式はN+拡散を含んでいる、請求項3に記載のフォトダイオード素子(20)。
- 前記第一の拡散形式はN+拡散を含んでいる、請求項1に記載のフォトダイオード素子(20)。
- 前記第二の拡散形式はP+拡散を含んでいる、請求項5に記載のフォトダイオード素子(20)。
- 前記作用領域(32)はグリッドを構成している、請求項1に記載のフォトダイオード素子(20)。
- 前記非作用領域(33)の寸法は、最短キャリア拡散距離により決定される、請求項1に記載のフォトダイオード素子(20)。
- 前記最短キャリア拡散距離は200μm以下を含んでいる、請求項8に記載のフォトダイオード素子(20)。
- 第一の拡散形式を含む第一の層(22)と、
第二の拡散形式の複数の作用領域(55)及び非作用領域(57)を含む電荷収集域(29)を画定する第二の層(24)であって、前記複数の作用領域(55)は電気的に相互接続されている、第二の層(24)と、
前記第一の層(22)と前記第二の層(24)との間に配設されている真性半導体層(26)と
を備えたフォトダイオード素子(20)。 - 前記第一の拡散形式はP+拡散を含んでいる、請求項10に記載のフォトダイオード素子(20)。
- 前記第一の拡散形式はN+拡散を含んでいる、請求項10に記載のフォトダイオード素子(20)。
- 前記複数の作用領域の二つを接続する伝導性接点(56)をさらに含んでいる請求項10に記載のフォトダイオード素子(20)。
- 前記伝導性接点(56)は金属接点を含んでいる、請求項13に記載のフォトダイオード素子(20)。
- 前記非作用領域(57)は真性半導体を含んでいる、請求項10に記載のフォトダイオード素子(20)。
Applications Claiming Priority (1)
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---|---|---|---|
US12/434,947 US8552466B2 (en) | 2009-05-04 | 2009-05-04 | Low capacitance photodiode element and computed tomography detector |
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JP2010263214A true JP2010263214A (ja) | 2010-11-18 |
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JP2010104703A Pending JP2010263214A (ja) | 2009-05-04 | 2010-04-30 | 低キャパシタンスのフォトダイオード素子及び計算機式断層写真法検出器 |
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US (1) | US8552466B2 (ja) |
JP (1) | JP2010263214A (ja) |
CN (2) | CN101882626B (ja) |
DE (1) | DE102010016700B4 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594182A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体受光装置 |
JPS6059787A (ja) * | 1983-09-13 | 1985-04-06 | Fujitsu Ltd | 半導体受光素子 |
US20080277753A1 (en) * | 2007-05-07 | 2008-11-13 | Peter Steven Bui | Thin active layer fishbone photodiode and method of manufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252852A (en) * | 1989-03-14 | 1993-10-12 | Fujitsu Limited | Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration |
US5796153A (en) * | 1995-05-08 | 1998-08-18 | Analogic Corporation | Variable-response x-ray detection assemblies and methods of using same |
US5587611A (en) * | 1995-05-08 | 1996-12-24 | Analogic Corporation | Coplanar X-ray photodiode assemblies |
US5837995A (en) * | 1996-11-25 | 1998-11-17 | Alan Y. Chow | Wavelength-controllable voltage-phase photodiode optoelectronic switch ("opsistor") |
JP2001027673A (ja) * | 1999-07-15 | 2001-01-30 | Hitachi Medical Corp | X線検出器及びこれを用いるx線ct装置 |
US6753214B1 (en) * | 2001-02-16 | 2004-06-22 | Optical Communication Products, Inc. | Photodetector with isolation implant region for reduced device capacitance and increased bandwidth |
US6707046B2 (en) * | 2002-01-03 | 2004-03-16 | General Electric Company | Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination |
US7161155B1 (en) * | 2003-07-02 | 2007-01-09 | Analogic Corporation | X-ray detector with increased detective quantum efficiency |
US20060289777A1 (en) * | 2005-06-29 | 2006-12-28 | Wen Li | Detector with electrically isolated pixels |
US20070272872A1 (en) * | 2006-05-24 | 2007-11-29 | Bruker Axs, Inc. | X-ray detector with photodetector embedded in scintillator |
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2009
- 2009-05-04 US US12/434,947 patent/US8552466B2/en active Active
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2010
- 2010-04-29 DE DE102010016700.2A patent/DE102010016700B4/de active Active
- 2010-04-30 JP JP2010104703A patent/JP2010263214A/ja active Pending
- 2010-05-04 CN CN201010178129.3A patent/CN101882626B/zh active Active
- 2010-05-04 CN CN201510553548.3A patent/CN105118885B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594182A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体受光装置 |
JPS6059787A (ja) * | 1983-09-13 | 1985-04-06 | Fujitsu Ltd | 半導体受光素子 |
US20080277753A1 (en) * | 2007-05-07 | 2008-11-13 | Peter Steven Bui | Thin active layer fishbone photodiode and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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US20100276777A1 (en) | 2010-11-04 |
CN105118885B (zh) | 2017-10-13 |
CN105118885A (zh) | 2015-12-02 |
DE102010016700B4 (de) | 2017-02-09 |
CN101882626A (zh) | 2010-11-10 |
DE102010016700A1 (de) | 2010-11-18 |
US8552466B2 (en) | 2013-10-08 |
CN101882626B (zh) | 2015-10-07 |
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