JP2010262225A - Image display device and correction method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device capable of securing high display quality of all displayed images; and to provide the correction method thereof. <P>SOLUTION: The image display device 1 includes: a plurality of light-emitting pixels arranged in a matrix; and a plurality of signal lines 12 arranged corresponding to each light-emitting pixel row. Each of the plurality of light-emitting pixels includes: a drive transistor 22 for generating a drain current corresponding to a signal voltage by applying the signal voltage for determining light emission of each light-emitting pixel from the signal line 12 to a gate; a selection transistor inserted between the signal line 12 and the gate terminal of the drive transistor 22; and a light-emitting element for emitting light when the drain current flows. In the light-emitting pixel 11P, a fixed resistor 25 is provided between the source and the drain of the selection transistor, and the signal line 12 and the gate terminal of the drive transistor 22 is always made conductive with each other via the fixed resistor 25. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an image display device and a correction method thereof, and more particularly to an image display device having a drive circuit for each pixel and a correction method thereof.

  As an image display device using a current-driven light emitting element, an organic EL display using an organic electroluminescence element (hereinafter referred to as an organic EL element) is known. Since this organic EL display has the advantages of good viewing angle characteristics and low power consumption, it has attracted attention as a next-generation FPD (Flat Pan Display) candidate.

  Usually, the organic EL elements constituting the pixels are arranged in a matrix. For example, in an active matrix organic EL display, a thin film transistor (TFT) is provided at the intersection of a plurality of scanning lines and a plurality of data lines, and a storage capacitor element (capacitor) and a gate of a driving transistor are provided in the TFT. And a compensation circuit are connected. Then, the TFT is turned on through the selected scanning line, and a data signal or the like from the data line is input to the driving transistor, the holding capacitor element and the compensation circuit, and the organic EL element emits light by the driving transistor, the holding capacitor element and the compensation circuit. Control brightness and light emission timing. With this pixel drive circuit configuration, in an active matrix organic EL display, the organic EL element can emit light until the next scanning (selection), so that even if the duty ratio is increased, the luminance of the display is reduced. There is nothing wrong.

  However, in the conventional organic EL panel, if any one of the elements and wirings constituting the pixel driving circuit is abnormal, an accurate signal voltage may not be supplied to the gate of the driving transistor. This causes a problem that the drive transistor continues to flow an abnormal current value (bright spot) or does not flow current (dark spot). This is a problem peculiar to an active matrix type organic EL display that requires a complicated pixel drive circuit configuration. In addition, as the pixel drive circuit configuration becomes more complicated and the number of light emitting pixels increases, the thin film stack structure needs to be miniaturized. appear.

  In order to improve this, from the viewpoint that the dark spot is less conspicuous than the bright spot, a part of the pixel drive circuit is cut by laser processing etc. at the time of manufacturing, and the drive element is not driven, thereby making the bright spot dark. It is common to take a method of making it.

  Patent Document 1 proposes a method of correcting a light emitting pixel in which a defect has occurred when forming a pixel driving circuit element or wiring. In order to correct defective light-emitting pixels that are always in a light-emitting state due to a short circuit of a circuit element or the like, a non-overlapping portion electrically connected apart from other conductive portions and wirings is provided in all light-emitting pixel regions. It has been. For the defective light emitting pixels, the non-overlapping portion is cut by irradiating the non-overlapping portion with laser. As a result, the defective pixel is blocked from transmission of electrical signals, and is darkened without being damaged by laser irradiation.

  As a result, it is possible to prevent deterioration in display quality due to defective pixels that have become bright spots.

JP 2008-203636 A

  However, as represented by the correction method of the image display device described in Patent Document 1, in the method of darkening defective pixels that have been brightened, dark dots remain after correction. In this case, for a bright display image, a dark dot pixel exists in the bright display image, so the display quality is not improved, but rather the display quality is deteriorated by correcting the dark dot.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an image display device capable of ensuring high display quality in any display image and a correction method thereof.

  In order to solve the above problems, an image display device according to the present invention includes an image display including a plurality of light emitting pixels arranged in a matrix and a plurality of signal lines arranged corresponding to each light emitting pixel column. Each of the plurality of light emitting pixels includes a driving transistor that generates a drain current corresponding to the signal voltage by applying a signal voltage that determines light emission of the light emitting pixel from the signal line to a gate. A selection transistor inserted between the signal line and the gate terminal of the driving transistor, and a light emitting element that emits light when the drain current flows, and in at least one light emitting pixel of the plurality of light emitting pixels The source-drain of the selection transistor is transformed into a fixed resistor, and the signal line and the gate terminal of the driving transistor are fixed to the fixed transistor. Characterized in that conducting at all times through the resistor.

  According to this configuration, for example, a light-emitting pixel that is determined to be abnormal in operation due to a failure of the selection transistor when the drive circuit is formed, or a light-emitting pixel that is determined to be abnormal in operation due to an open failure of an additional circuit connected to the gate wiring of the drive transistor The source-drain of the selection transistor is transformed into a fixed resistor. Accordingly, the signal voltages of the plurality of light emitting pixels supplied to the light emitting pixel column to which the light emitting pixel belongs are sequentially applied in real time to the light emitting pixel having the abnormal operation from the signal line connected to the light emitting pixel. . In this case, the light emitting pixels that have malfunctioned appear to emit light with the light emission luminance obtained by averaging the respective light emission luminances of the light emission pixel columns in one frame period. Therefore, the light emission operation of the light emitting pixel in which the signal voltage is not supplied to the gate terminal of the drive transistor due to a failure in the selection transistor or the additional circuit when the drive circuit is formed, It becomes possible to emit light with an averaged emission luminance. That is, it is possible to avoid the darkening of the light emitting pixels and to ensure high display quality in any display image.

  The fixed resistor may be transformed by irradiating a laser on a channel layer made of a semiconductor formed between the source and drain of the selection transistor of the one light emitting pixel.

  By irradiating a channel layer made of a semiconductor with a laser under a predetermined condition, the channel layer is locally heated without damaging other circuit elements. This heating makes it possible to change the carrier concentration and the crystal structure of the semiconductor constituting the channel layer. As a result, the resistance value of the semiconductor of the channel layer is reduced and can be transformed into a fixed resistor.

  Each of the plurality of light emitting pixels further includes an additional circuit capable of holding a voltage corresponding to the signal voltage from the signal line, and in the one light emitting pixel, the gate terminal of the driving transistor is provided. And the gate wiring that electrically connects one of the source and the drain of the selection transistor and the additional circuit may be disconnected.

  As a result, for example, in the light emitting pixel that is determined to be abnormal in operation due to a failure of the additional circuit, the source-drain of the selection transistor is transformed into a fixed resistor, and the electrical connection between the additional circuit and the gate wiring is interrupted. Has been. Accordingly, the signal voltages of the plurality of light emitting pixels supplied to the light emitting pixel column to which the light emitting pixel belongs are sequentially applied in real time to the light emitting pixel having the abnormal operation from the signal line connected to the light emitting pixel. . Moreover, the abnormal holding voltage from the additional circuit is not applied to the gate terminal of the driving transistor. Therefore, the light emitting operation of the light emitting pixel in which the abnormal signal voltage is supplied to the gate terminal of the driving transistor due to a failure in the additional circuit when the driving circuit is formed, It becomes possible to emit light with the emitted luminance.

  Further, in the one light emitting pixel, the electrical connection may be interrupted by irradiating a laser to a connection portion between the gate wiring and the additional circuit.

  As a result, it is possible to disconnect the connection portion with high accuracy without damaging other circuit elements. Further, by using laser irradiation, a cutting process can be realized for each light emitting pixel, and a correction process can be simplified.

  In addition, the present invention can be realized not only as an image display apparatus including such characteristic means, but also as a method of correcting the image display apparatus after the above-described image display apparatus is manufactured or completed. be able to.

  Specifically, in the method for correcting a semiconductor device of the present invention, a signal transistor that determines light emission is applied from a signal line to a gate terminal, thereby converting the drive transistor to a drain current corresponding to the signal voltage, and the signal line A plurality of light-emitting pixels each having a driving circuit layer having a selection transistor inserted between the gate terminal of the driving transistor and a light-emitting layer having a light-emitting element that emits light when the drain current flows. A method for correcting an arranged image display device, wherein the signal voltage corresponding to the light emitting pixel is normally applied to the gate terminal of the driving transistor of the light emitting pixel when the driving circuit layer is formed. The inspection step for inspecting all the light emitting pixels, and the signal voltage corresponding to the light emitting pixels is normally applied in the inspection step. One is determined by not the source of the selection transistor of the light emitting pixels - characterized in that it comprises a modified step of transforming the fixed resistor between the drain.

  According to this method, for example, a light emitting pixel that is determined to be abnormal in operation due to a failure of the selection transistor when the driving circuit is formed, or a light emitting pixel that is determined to be abnormal in operation due to an open failure of an additional circuit connected to the gate wiring of the driving transistor. In FIG. 5, the fixed resistor is formed between the source and drain of the selection transistor. Accordingly, the signal voltages of the plurality of light emitting pixels supplied to the light emitting pixel column to which the light emitting pixel belongs are sequentially applied in real time to the light emitting pixel having the abnormal operation from the signal line connected to the light emitting pixel. . In this case, the light-emitting pixels having the abnormal operation appear to emit light with the light emission luminance obtained by averaging the respective light emission luminances of the light-emitting pixel column in one frame period. Therefore, for example, the light emitting operation of the light emitting pixel in which a signal voltage is not supplied to the gate terminal of the drive transistor due to a failure of the selection transistor at the time of formation of the drive circuit or due to an open failure of the additional circuit, It is possible to emit light with the light emission luminance obtained by averaging the light emission luminances of the light emitting pixel columns. That is, it is possible to avoid the darkening of the light emitting pixels and to ensure high display quality in any display image.

  According to the image display device and the correction method thereof of the present invention, the source and the drain of the selection transistor included in the light emitting pixel, which is abnormal in operation when the drive circuit is formed, is transformed into the fixed resistor. Therefore, the light emitting pixels having the abnormal operation are prevented from being constantly brightened or constantly darkened, and become an average light emitting state by a plurality of signal voltages supplied from the signal lines to which the light emitting pixels are connected. It is possible to ensure high display quality in any display image.

(A) is a block diagram which shows the structure of the image display apparatus which concerns on embodiment of this invention. (B) is a main circuit block diagram of the luminescent pixel which concerns on embodiment of this invention. FIG. 4A is a circuit configuration diagram of a light emitting pixel in which a selection transistor is transformed into a fixed resistor according to an embodiment of the present invention. (B) is an example of a cross-sectional view of a light emitting pixel according to an embodiment of the present invention in which a selection transistor is transformed into a fixed resistor. It is an operation | movement timing chart explaining the light emission operation | movement in 1 frame period of the light emission pixel which operates normally. It is an operation | movement timing chart explaining the light emission operation | movement in 1 frame period of the light emission pixel by which the selection transistor was transformed into the fixed resistor. (A) is a pixel top view at the time of a drive circuit layer formation explaining the correction method of the image display apparatus which concerns on embodiment of this invention. (B) is a structure sectional view at the time of forming a drive circuit layer for explaining a correction method of the image display device according to the embodiment of the present invention. It is an operation | movement flowchart which shows the correction method of the image display apparatus of this invention. 1 is an external view of a thin flat TV incorporating an image display device of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments and drawings, the same components will be described with the same reference numerals. In the following, an image display device composed of an organic EL element having a top emission type anode (anode) on the bottom surface and a cathode (cathode) on the top surface will be described as an example. However, the present invention is not limited to this.

(Embodiment)
In the image display device in this embodiment, a plurality of light-emitting pixels are arranged in a matrix, and each of the plurality of light-emitting pixels includes a driving transistor that generates a drain current corresponding to a signal voltage from a signal line, and the signal A selection transistor inserted between the line and the gate terminal of the driving transistor, and a light emitting element that emits light when the drain current flows, and at least one light emitting pixel of the plurality of light emitting pixels A fixed resistor is provided between the source and the drain. Accordingly, it is possible to emit light with a light emission luminance in which the light emission luminance of the light emission pixel column is time-averaged in the light emission operation of the light emission pixel that does not normally operate when the drive circuit is formed. That is, it is possible to avoid dark spots of the light emitting pixels and to ensure high display quality in all display images.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1A is a block diagram showing a configuration of an image display apparatus according to an embodiment of the present invention. The image display device 1 in FIG. 1 includes a display panel 10 and a control circuit 20. The display panel 10 includes a plurality of light emitting pixels 11, a plurality of signal lines 12 arranged for each light emitting pixel column, a plurality of scanning lines 13 arranged for each light emitting pixel row, a scanning line driving circuit 14, and a signal. A line driving circuit 15.

  The light emitting pixels 11 are arranged in a matrix on the display panel 10.

  The scanning line driving circuit 14 outputs a scanning signal to each scanning line 13 to drive circuit elements included in the light emitting pixels.

  The signal line driver circuit 15 outputs a signal voltage and a reference voltage to the signal line 12, thereby realizing light emission of the light emitting pixels corresponding to the luminance signal.

  The control circuit 20 controls the output timing of the scanning signal output from the scanning line driving circuit 14. Further, the control circuit 20 controls the timing at which the signal voltage output from the signal line driving circuit 15 is output.

  FIG. 1B is a main circuit configuration diagram of the light emitting pixel according to the embodiment of the present invention. The light emitting pixel 11 shown in the figure is a light emitting pixel capable of normal operation, and includes a drive circuit layer 11A and a light emitting layer 11B. The drive circuit layer 11 </ b> A includes a selection transistor 21, a drive transistor 22, and a storage capacitor element 23. The drain electrode of the selection transistor 21 is connected to the signal line 12, the gate electrode of the selection transistor 21 is connected to the scanning line 13, and the source electrode of the selection transistor 21 is connected to the gate electrodes of the storage capacitor element 23 and the driving transistor 22. ing. The drain electrode of the drive transistor 22 is connected to the power supply Vdd, and the source electrode is connected to the anode of the light emitting layer 11B.

  In this configuration, when a scanning signal is input to the scanning line 13 and the selection transistor 21 is turned on, the signal voltage supplied via the signal line 12 is written to the storage capacitor element 23. The holding voltage written in the holding capacitor element 23 is held for one frame period, and the holding voltage changes the conductance of the driving transistor 22 in an analog manner, so that the driving current corresponding to the light emission gradation is changed to the light emitting layer 11B. To the anode. Further, the drive current supplied to the anode of the light emitting layer 11B flows to the organic EL element 24 and the cathode of the light emitting layer 11B. Thereby, the organic EL element 24 of the light emitting layer 11B emits light and is displayed as an image.

  The drive circuit layer 11A is not limited to the circuit configuration described above. In other words, the selection transistor 21, the drive transistor 22, and the storage capacitor element 23 are circuit components necessary for flowing a drive current corresponding to the voltage value of the luminance signal to the light emitting layer 11B, but are not limited to the above-described form. Further, a case where another circuit component is added to the circuit components described above is also included in the drive circuit layer 11A according to the present invention. For example, the storage capacitor element 23 connected to the gate wiring of the driving transistor 22 functions as an additional circuit. The additional circuit selects a transistor for the purpose of correcting the threshold voltage of the driving transistor 22 and a control for controlling the selection transistor. Lines and the like may be provided.

  FIG. 2A is a circuit configuration diagram of a light emitting pixel in which a selection transistor is transformed into a fixed resistor according to an embodiment of the present invention. The image display device 1 illustrated in the figure includes a light emitting pixel 11P. The luminescent pixel 11P is a luminescent pixel that has been determined to be abnormal in operation due to a defect in circuit elements or wiring other than the drive transistor 22 constituting the drive circuit layer 11A when the drive circuit layer 11A is formed. As causes of this operation abnormality, there are open / short failure of the storage capacitor element 23, open failure of the selection transistor 21, and the like.

  On the other hand, before the formation of the light emitting layer 11B, the electrical connection between the gate wiring of the driving transistor 22 of the light emitting pixel 11P and the storage capacitor element 23 is cut off, and the selection transistor 21 is transformed into the fixed resistor 25.

  FIG. 2B is an example of a cross-sectional view of a light emitting pixel in which a selection transistor is transformed into a fixed resistor according to an embodiment of the present invention. The light emitting pixel 11P shown in the figure includes a substrate 100, a drive circuit layer 11A, a light emitting layer 11B, and a transparent sealing film 110.

  The substrate 100 is, for example, a glass substrate. The substrate 100 can also be a flexible substrate made of resin. The substrate 100, together with the drive circuit layer 11A, constitutes a thin film transistor (TFT) substrate. In the case of the top emission structure as shown in FIG. 2, the substrate 100 does not need to be transparent, and a non-transparent substrate, for example, a silicon substrate can be used.

  The driving circuit layer 11A included in the light emitting pixel 11P includes a signal line 12 (not shown) formed on the substrate 100, a driving transistor 22, a holding capacitor element 23 (not shown), a fixed resistor 25, a gate. An insulating film 201, an interlayer insulating film 202, a planarization film 203, a drain 211, a source 212, a drain electrode 213, a source electrode 214, and a gate electrode 215 are provided.

  The signal line 12 is connected to the drain electrode 213. In the light emitting pixel 11 that operates normally, the signal line is connected to the drain electrode 213 of the selection transistor 21, whereby a signal voltage corresponding to the light emitting pixel is applied to the gate terminal of the driving transistor, and the organic EL element emits light normally. Light is emitted at the timing and normal light emission luminance.

  On the other hand, the light emitting pixel 11P is in a state in which a normal signal voltage is not supplied to the gate terminal of the drive transistor due to a defect occurring in a circuit element or wiring other than the drive transistor when the drive circuit is formed.

  The drain 211, the source 212, the drain electrode 213, the source electrode 214, and the gate electrode 215 are components of the selection transistor 21 in the light emitting pixel 11 that operates normally.

  On the other hand, in the light emitting pixel 11P, the fixed resistor 25 is formed between the drain 211 and the source 212, not the channel layer, and therefore, between the signal line 12 and the gate terminal of the driving transistor 22 is formed. The fixed resistor 25 is inserted in series instead of the selection transistor 21.

  The fixed resistor 25 is formed on the gate insulating film 201 and has a channel layer of the selection transistor 21 modified. For example, amorphous silicon in which phosphorus (P) is diffused or phosphorus (P) is formed. It is diffused microcrystalline silicon and has a film thickness of 50 nm. The channel layer of the selection transistor 21 is, for example, non-doped amorphous silicon, and a method for transforming the channel layer into a fixed resistor will be described in a method for correcting an image display device described later.

  The drain 211 and the source 212 are formed on the gate insulating film 201, and are, for example, amorphous silicon doped with phosphorus (P) and have a thickness of 150 nm.

  The drain electrode 213 and the source electrode 214 are formed on the drain 211 and the source 212, respectively. For example, an alloy of molybdenum (Mo) and tungsten (W) / aluminum (Al) / molybdenum (Mo) and tungsten (W And a film thickness of 100 nm.

  The gate electrode 215 is formed on the substrate 100 and is made of, for example, an alloy of molybdenum (Mo) and tungsten (W), and has a film thickness of 100 nm.

The gate insulating film 201 is formed on the substrate 100 after forming the gate electrode 215, and is made of, for example, SiN, SiON, or SiO ₂ and has a thickness of 150 nm.

  Although not shown in FIG. 2B, the gate wiring is formed inside and on the surface of the interlayer insulating film 202 so that the source electrode 214 and the gate terminal of the driving transistor are connected.

  Further, the holding capacitor element 23 is a parallel plate type capacitor element sandwiched between two electrode layers facing each other in the stacking direction in the drive circuit layer 11A, although not shown in FIG. It functions as an additional circuit that can be applied to the gate terminal of the driving transistor 22. In the light emitting pixel 11 operating normally, one of the electrode layers is connected to the gate wiring in the drive circuit layer 11A. The other of the electrode layers is connected to a power supply Vdd. The material of the electrode layer is, for example, an alloy of molybdenum (Mo) and tungsten (W), or a laminated structure of an alloy of Mo and W / aluminum (Al) / Mo and W. Is, for example, 150 nm.

  On the other hand, in the light emitting pixel 11P, it is assumed that the storage capacitor element 23 is short-circuited between the two electrodes. In this case, since the voltage of the power supply Vdd is constantly applied to the gate terminal of the driving transistor 22 in a state where the storage capacitor element 23 and the gate wiring are connected, the light emitting pixel 11P is always in the bright spot state. End up.

  In order to avoid this state, in the light emitting pixel 11P, not only the channel layer of the selection transistor 21 is transformed into a fixed resistor, but also the electrical connection between the storage capacitor element 23 and the gate wiring is interrupted. The wiring is disconnected.

  Note that the connection wiring between the gate wiring of the light emitting pixel 11P and the storage capacitor element 23 may not be disconnected. For example, when the electrical connection between the storage capacitor element 23 and the gate wiring is interrupted when the drive circuit is formed, or when the selection transistor 21 is operating abnormally and the additional circuit including the storage capacitor element 23 is operating normally. Etc. In these cases, only by changing the channel layer of the selection transistor 21 to a fixed resistor, it is possible to avoid the constant bright spots and the constant dark spots of the light emitting pixels 11P.

  The drive transistor 22 is a TFT formed on the substrate 100. The driving transistor 22 includes a gate insulating film 201, a drain 221, a source 222, a drain electrode 223, a source electrode 224, a gate electrode 225, a semiconductor layer 226 formed in contact with the source 222. About the material and film thickness of each component mentioned above, it is substantially the same as the component of the selection transistor 21. FIG.

  On the substrate 100, after the formation of the driving transistor 22, an interlayer insulating film 202 and a planarizing film 203 are formed.

  The interlayer insulating film 202 is formed so as to cover the fixed resistor 25, the drain electrode 213, the source electrode 214, the driving transistor 22 and the storage capacitor element 23, whereby the circuit element, the signal line 12, and the gate wiring are formed. The circuit wiring such as can be arranged apart from each other.

  The surface of the planarizing film 203 is planarized, thereby enabling the formation of the light emitting layer 11B made of a multilayer film stacked on the drive circuit layer 11A.

  Note that a protective film may be formed between the interlayer insulating film 202 and the planarization film 203. The protective film has a function of preventing the circuit elements and circuit wirings formed in the drive circuit layer 11A from being deteriorated due to external environmental changes, and the circuit elements, the signal lines 12 and the gate wirings. It is formed so as to cover the circuit wiring.

  The material of the interlayer insulating film 202, the protective film, and the planarizing film 203 is, for example, a silicon oxide film (SiOx) or a silicon nitride film (SiN), and is formed by, for example, a CVD method or a sputtering method. Further, the planarized film 203 is formed by planarizing the formed film by, for example, a CMP (Chemical Mechanical Polishing) method or the like.

  Note that the surface of the interlayer insulating film 202 and the protective film is not necessarily planarized. The flatness of the interlayer insulating film 202 and the protective film may be flat enough that circuit wiring can be continuously formed on the respective surfaces.

  The light emitting layer 11B includes an anode 103, a hole injection layer 104, a hole transport layer 105, an organic light emitting layer 106, a bank layer 107, an electron injection layer 108, and a transparent cathode 109.

  The light emitting pixel 11P illustrated in FIG. 2B has a top emission structure. That is, when a voltage is applied to the light emitting layer 11B, light is generated in the organic light emitting layer 106, and light is emitted upward through the transparent cathode 109 and the transparent sealing film 110. Further, the light emitted from the organic light emitting layer 106 directed downward is reflected by the anode 103, and the light is emitted upward through the transparent cathode 109 and the transparent sealing film 110.

The anode 103 is an electrode that is laminated on the surface of the planarizing film 203 of the drive circuit layer 11A and applies a positive voltage to the light emitting layer 11B with respect to the transparent cathode 109. The source electrode 224 of the anode 103 and the driving transistor 22 are connected by vias A _P formed in the driving circuit layer 11A. As an anode material constituting the anode 103, for example, Al, Ag, or an alloy thereof, which is a highly reflective metal, is preferable. Further, the thickness of the anode 103 is, for example, 100 to 300 nm.

  The hole injection layer 104 is formed on the surface of the anode 103 and has a function of injecting holes into the organic light emitting layer 106 in a stable manner or by assisting generation of holes. Thereby, the drive voltage of the light emitting layer 11B is lowered, and the lifetime of the element is extended by stabilizing the hole injection. As a material of the hole injection layer 104, for example, PEDOT (polyethylenedioxythiophene) can be used. In addition to the hole injection property, the hole injection layer 104 is required to have optical transparency. As the thickness of the hole injection layer 104 increases, the reflectivity of the hole injection layer 104 decreases. Therefore, the thickness of the hole injection layer 104 is preferably about 10 nm to 100 nm, for example.

  The hole transport layer 105 is formed on the surface of the hole injection layer 104, efficiently transports holes injected from the hole injection layer 104 into the organic light emitting layer 106, and the organic light emitting layer 106 and hole injection. It has a function of preventing deactivation of excitons at the interface with the layer 104 and blocking electrons. The hole transport layer 105 is, for example, an organic polymer material having a property of transferring generated holes by intermolecular charge transfer reaction, and examples thereof include triferamine and polyaniline. Moreover, the thickness of the positive hole transport layer 105 is about 5-50 nm, for example.

  Note that the hole transport layer 105 may be omitted depending on the material of the hole injection layer 104 and the organic light emitting layer 106 which are adjacent layers.

  The organic light emitting layer 106 is formed on the surface of the hole transport layer 105, and has a function of emitting light by generating an excited state when holes and electrons are injected and recombined.

  As the organic light emitting layer 106, it is preferable to use a light emitting organic material that can be formed by a wet film forming method such as inkjet or spin coating. Thereby, simple and uniform film formation is possible on a large-screen substrate. Although it does not specifically limit as this material, A polymeric organic material is preferable. Features of the polymer organic material include a simple device structure, excellent film reliability, and a low-voltage driven device.

  Since a polymer having a conjugated system such as an aromatic ring or a condensed ring or a π-conjugated polymer has fluorescence, it can be used as a polymer organic material constituting the organic light emitting layer 106. Examples of the polymer light emitting material constituting the organic light emitting layer 106 include polyphenylene vinylene (PPV) or a derivative thereof (PPV derivative), polyfluorene (PFO) or a derivative thereof (PFO derivative), and a polyspirofluorene derivative. Can do. It is also possible to use polythiophene or a derivative thereof.

  The bank layer 107 is formed on the surface of the hole injection layer 104 and has a function as a bank for forming the hole transport layer 105 and the organic light emitting layer 106 formed by a wet film formation method in a predetermined region. . The material used for the bank layer 107 may be either an inorganic substance or an organic substance, but the organic substance is generally more preferable because it has a higher water repellency. Examples of such materials include resins such as polyimide and polyacryl. A method for patterning the bank layer 107 is not particularly limited, but it is preferable to apply a photolithography method using a photosensitive material. The bank layer 107 has a thickness of, for example, about 100 to 3000 nm.

  The electron injection layer 108 is formed on the organic light emitting layer 106, reduces the barrier for electron injection into the organic light emitting layer 106, lowers the driving voltage of the light emitting layer 11B, and suppresses exciton deactivation. Have As a result, it is possible to stabilize the electron injection and prolong the life of the device, enhance the adhesion with the transparent cathode 109, improve the uniformity of the light emitting surface, and reduce device defects. The electron injection layer 108 is not particularly limited, but is preferably made of barium, aluminum, phthalocyanine, lithium fluoride, and a barium-aluminum laminate. The thickness of the electron injection layer 108 is, for example, about 2 to 50 nm.

  The transparent cathode 109 is laminated on the surface of the electron injection layer 108, and has a function of applying a negative voltage to the light emitting layer 11B with respect to the anode 103 and injecting electrons into the device (particularly the organic light emitting layer 106). The transparent cathode 109 is not particularly limited, but it is preferable to use a substance and structure having a high transmittance. Thereby, a top emission organic EL element with high luminous efficiency can be realized. The configuration of the transparent cathode 109 is not particularly limited, but a metal oxide layer is used. The metal oxide layer is not particularly limited, and a layer made of indium tin oxide (hereinafter referred to as ITO) or indium zinc oxide (hereinafter referred to as IZO) is used. Further, the thickness of the transparent cathode 109 is, for example, about 5 to 200 nm.

  The transparent sealing film 110 is formed on the surface of the transparent cathode 109 and has a function of protecting the element from moisture. Further, the transparent sealing film 110 is required to be transparent. The transparent sealing film 110 is made of, for example, SiN, SiON, or an organic film. Moreover, the thickness of the transparent sealing film 110 is, for example, about 20 to 5000 nm.

  According to the structure of the light emitting pixel 11P described above, an accurate signal voltage is not supplied to the gate electrode 225 of the drive transistor 22 due to a defect in the selection transistor 21 or the additional circuit when the drive circuit is formed. However, since the channel layer of the selection transistor 21 is transformed into a fixed resistor, a signal corresponding to a plurality of light emitting pixels included in the light emitting pixel column is connected to the gate of the driving transistor 22 of the light emitting pixel 11P from the signal line 12. Voltage is applied sequentially. In this case, the light emitting pixel 11P appears to emit light with the light emission luminance obtained by averaging the light emission luminances of the plurality of signal voltages output from the signal line 12 in one frame period. Therefore, the light emitting pixel 11P can emit light with the light emission luminance obtained by averaging the light emission luminance of the light emitting pixel column. That is, it is possible to avoid dark spots and bright spots of the light emitting pixels 11P, and to ensure high display quality in all display images.

  Next, the light emission operation of the image display device 1 described in the present embodiment will be described.

  FIG. 3 is an operation timing chart for explaining a light emission operation in one frame period of a normal operation light emitting pixel. In the figure, the horizontal axis represents the passage of time. In the vertical direction, in order from the top, (n-1) rows of scanning lines 13, n rows of scanning lines 13, (n + 1) rows of scanning lines 13, m columns of signal lines 12, (n-1) rows. A waveform diagram of voltages generated at the anode of the light emitting layer 11B, the anode of the n light emitting layers 11B, and the anode of the (n + 1) light emitting layers 11B is shown. Hereinafter, the light emission operation of normal light emitting pixels arranged in n rows and m columns will be mainly described.

  First, at time t0, the control circuit 20 starts the light emission operation of the (n−1) rows and m columns of light emitting pixels. The control circuit 20 changes the voltage level of the scanning line 13 of (n−1) rows from Vgoff to Vgon, and turns on the selection transistors 21 of (n−1) rows and m columns.

During the period from t0 to t1, the selection transistor 21 of (n-1) rows and m columns maintains the on state, and during this period, the storage capacitor element 23 of the (n-1) rows and m columns of light emitting pixels has m columns. The signal voltage supplied to the signal line 12 is written. The amount of current flowing through the driving transistor 22 of the (n−1) rows and m columns of light emitting pixels is determined by the signal voltage value written in the storage capacitor element 23, and the brightness corresponding to the amount of current (n−1) ) The light emitting layer 11B of the light emitting pixels in the row and m columns emits light. At this time, the potential of the anode of the light emitting layer 11B becomes V _n−1 , and thereafter the voltage is maintained for one frame period to continue light emission.

  Next, at time t1, the control circuit 20 starts the light emitting operation of the light emitting pixels in the n rows and the m columns. The control circuit 20 changes the voltage level of the n-row scanning line 13 from Vgoff to Vgon, and turns on the selection transistor 21 in the n-row and m-column.

During the period from t1 to t2, the selection transistor 21 in the n rows and the m columns maintains the on state, and in this period, the storage capacitor elements 23 of the light emitting pixels in the n rows and the m columns are supplied to the signal lines 12 in the m columns. A signal voltage is written. The amount of current flowing through the driving transistor 22 of the light emitting pixel in the n row and m column is determined by the signal voltage value written in the storage capacitor element 23, and the brightness of the light emitting pixel in the n row and m column is determined with brightness corresponding to the current amount. The light emitting layer 11B emits light. At this time, the potential of the anode of the light emitting layer 11B becomes V _n , and thereafter the voltage is maintained for one frame period to continue light emission.

  Next, at time t2, the control circuit 20 starts the light emission operation of the (n + 1) rows and m columns of light emitting pixels. The control circuit 20 changes the voltage level of the scanning line 13 of (n + 1) rows from Vgoff to Vgon, and turns on the selection transistors 21 of (n + 1) rows and m columns.

During the period from t2 to t3, the selection transistors 21 in the (n + 1) rows and m columns maintain the on state, and in this period, the storage capacitor elements 23 of the light emitting pixels in the (n + 1) rows and m columns are connected to the signal lines 12 in the m columns. The supplied signal voltage is written. The amount of current flowing through the driving transistor 22 of the (n + 1) rows and m columns of light emitting pixels is determined by the signal voltage value written in the storage capacitor element 23, and (n + 1) rows and m columns with brightness corresponding to the current amount. The light emitting layer 11B of the light emitting pixel emits light. At this time, the potential of the anode of the light emitting layer 11B becomes V _{n + 1} , and thereafter the voltage is maintained for one frame period to continue light emission.

  Next, in the period from t4 to t7, the light emission operation in the period from t0 to t3 is repeated. The period from t0 to t4 corresponds to one frame period during which the light emission intensity of all the light emitting pixels of the image display device 1 is rewritten. Thereafter, the light emission operation in the period from t0 to t4 is repeated.

  In the light emitting operation described above, an example is shown in which each light emitting pixel continues to emit light during one frame period by the storage capacitor element 23 included in each light emitting pixel. However, the light emitting operation of the image display device of the present invention is shown. Is not limited to this. For example, the non-light emission period may be provided before and after the light emission period by controlling the voltage level of the power supply Vdd or by separately arranging a selection transistor between the power supply Vdd and the drive transistor 22.

  Further, a period for correcting the threshold voltage of the drive transistor 22 may be provided in one frame period.

  In contrast to the above-described light emitting operation of the normal light emitting pixel, the light emitting operation in one frame period of the light emitting pixel 11P that is abnormally operated when the drive circuit layer 11A and the light emitting layer 11B are formed and the selection transistor is transformed into a fixed resistor is described below. explain.

  FIG. 4 is an operation timing chart for explaining the light emission operation in one frame period of the light emitting pixel in which the selection transistor is transformed into the fixed resistor. In the figure, the horizontal axis represents the passage of time. In the vertical direction, in order from the top, (n-1) rows of scanning lines 13, n rows of scanning lines 13, (n + 1) rows of scanning lines 13, m columns of signal lines 12, (n-1) rows. A waveform diagram of voltages generated at the anode of the light emitting layer 11B, the anode of the n light emitting layers 11B, and the anode of the (n + 1) light emitting layers 11B is shown. Here, the light emitting pixels arranged in the n rows and the m columns operate abnormally when the drive circuit layer 11A and the light emitting layer 11B are formed, and the light emission in which the selection transistor is transformed into a fixed resistor as illustrated in FIG. This is the pixel 11P.

  First, at time t <b> 0, the control circuit 20 starts the light emission operation of normal light emitting pixels in (n−1) rows and m columns. The control circuit 20 changes the voltage level of the scanning line 13 of (n−1) rows from Vgoff to Vgon, and turns on the selection transistors 21 of (n−1) rows and m columns.

During the period from t0 to t1, the selection transistor 21 of (n-1) rows and m columns maintains the on state, and during this period, the storage capacitor element 23 of the (n-1) rows and m columns of light emitting pixels has m columns. The signal voltage supplied to the signal line 12 is written. The amount of current flowing through the driving transistor 22 of the (n−1) rows and m columns of light emitting pixels is determined by the signal voltage value written in the storage capacitor element 23, and the brightness corresponding to the amount of current (n−1) ) The light emitting layer 11B of the light emitting pixels in the row and m columns emits light. At this time, the potential of the anode of the light emitting layer 11B becomes V _n−1 , and thereafter the voltage is maintained for one frame period to continue light emission.

  Next, at time t1, the control circuit 20 changes the voltage level of the n-th scanning line 13 from Vgoff to Vgon. Here, the signal transmission path from the signal line 12 to which the light emitting pixel 11 </ b> P is connected to the gate terminal of the driving transistor 22 is in a state through the fixed resistor 25. Therefore, the signal voltage corresponding to the plurality of light emitting pixels of the light emitting pixel column to which the light emitting pixel 11P belongs is applied to the gate terminal of the driving transistor 22 of the light emitting pixel 11P regardless of the change in the voltage level of the n rows of scanning lines 13. Are sequentially applied through the fixed resistor 25.

Therefore, the light-emitting in the period t1 to t2, the gate terminal of the driving transistor 22 of the light emitting pixel 11P, the signal voltage V _n to be applied to the luminescence pixel 11P is applied, the light emitting pixel 11P is in accordance with the V _n Emits light with brightness. On the other hand, in the period from t0 to t1, since the signal voltage V _n−1 to be applied to the (n−1) rows and m columns of light emitting pixels is applied to the gate terminal of the driving transistor 22 of the light emitting pixel 11P. The pixel 11P emits light with a light emission luminance corresponding to V _n−1 . In the period from t2 to t3, the signal voltage V _{n + 1} to be applied to the normal light emitting pixels of (n + 1) rows and m columns is applied to the gate terminals of the drive transistors 22 of the light emitting pixels 11P. The pixel 11P emits light with a light emission luminance corresponding to V _{n + 1} . Thereafter, the light emitting pixel 11P emits light with light emission luminance reflecting the signal voltage output from the signal lines 12 arranged in the m columns in real time. Here, when the selection transistor is not transformed into the fixed resistor, the light emitting pixel 11P is always in a bright spot state or a constantly dark spot state due to an abnormal operation. On the other hand, the light emitting pixel 11P included in the image display device 1 according to the embodiment of the present invention emits light sequentially corresponding to the signal voltages of the plurality of light emitting pixels included in the light emitting pixel column to which the light emitting pixel 11P belongs. In this case, the light emitting pixel 11P appears to emit light with the light emission luminance obtained by averaging each light emission luminance of the light emission pixel column to which the signal line 12 is connected in one frame period. Therefore, if the selection transistor is not transformed into a fixed resistor, the light emission operation of the light emitting pixel 11P that has been constantly lit or darkened emits light with the light emission luminance obtained by averaging the light emission luminance of the light emitting pixel column. It becomes possible. That is, it is possible to avoid bright spots and dark spots in the luminescent pixels, and to ensure high display quality in all display images.

  Hereinafter, at time t2, the control circuit 20 starts the light emission operation of the light emitting pixels of (n + 1) rows and m columns. The control circuit 20 changes the voltage level of the scanning line 13 of (n + 1) rows from Vgoff to Vgon, and turns on the selection transistors 21 of (n + 1) rows and m columns.

During the period from t2 to t3, the selection transistors 21 in the (n + 1) rows and m columns maintain the on state, and in this period, the storage capacitor elements 23 of the light emitting pixels in the (n + 1) rows and m columns are connected to the signal lines 12 in the m columns. The supplied signal voltage is written. The amount of current flowing through the driving transistor 22 of the (n + 1) rows and m columns of light emitting pixels is determined by the signal voltage value written in the storage capacitor element 23, and (n + 1) rows and m columns with brightness corresponding to the current amount. The light emitting layer 11B of the light emitting pixel emits light. At this time, the potential of the anode of the light emitting layer 11B becomes V _{n + 1} , and thereafter the voltage is maintained for one frame period to continue light emission.

  Next, in the period from t4 to t7, the light emission operation in the period from t0 to t3 is repeated. The period from t0 to t4 corresponds to one frame period during which the light emission intensity of all the light emitting pixels of the image display device 1 is rewritten. Thereafter, the light emission operation in the period from t0 to t4 is repeated.

  In the light emitting operation described above, an example is shown in which each light emitting pixel continues to emit light during one frame period by the storage capacitor element 23 included in each light emitting pixel. However, the light emitting operation of the image display device of the present invention is shown. Is not limited to this. For example, the non-light emission period may be provided before and after the light emission period by controlling the voltage level of the power supply Vdd or by separately arranging a selection transistor between the power supply Vdd and the drive transistor 22.

  Further, a period for correcting the threshold voltage of the drive transistor 22 may be provided in one frame period.

  Next, a correction method for the image display device 1 described in the present embodiment will be described.

  FIG. 5A and FIG. 5B are a pixel top view and a structure sectional view, respectively, at the time of forming a drive circuit layer for explaining a correction method for the image display device according to the embodiment of the present invention.

  FIG. 6 is an operation flowchart showing the correction method of the image display apparatus of the present invention.

  First, in the manufacturing process of the image display device 1 of the present invention, the circuit operation is inspected for all the luminescent pixels in the stage before the interlayer insulating film 202 is formed in the drive circuit layer 11A (S10 in FIG. 6). ). Specifically, for example, a test voltage is sequentially output to each light emitting pixel 11 using an array tester (Agilent: HS100), the scanning line 13 and the signal line 12, and the voltage is written in the storage capacitor element 23. Thereafter, the array tester sequentially reads the voltage written in the storage capacitor element 23 via the signal line 12. Thereby, the light emitting pixel 11P whose read voltage is not a predetermined voltage is specified. Thereby, the pixel specifying process of the light emitting pixel 11P having defects such as an open / short defect of the storage capacitor element 23 and an open defect of the selection transistor 21 is completed.

  Note that this circuit operation inspection step does not have to be performed at a stage before the interlayer insulating film 202 is formed. For example, at a stage after the interlayer insulating film 202 is formed or after the planarization film 203 is formed. There may be.

Next, as shown in FIG. 5A, the selection transistor included in the light emitting pixel 11P determined to be abnormal in the circuit operation specified in step S10 is irradiated with laser to be transformed into a resistor (FIG. 6). S20). Specifically, as described in FIG. 5B, the surface of the channel layer of the selection transistor included in the light emitting pixel 11P is irradiated with laser. As laser irradiation conditions, the following conditions are mentioned, for example. A laser beam having a wavelength of about 308 nm emitted from an excimer laser having an oscillation capability of 200 W or more in continuous oscillation is condensed using a microlens array or the like. The condensed laser light beam L has a light intensity of about ² mW / μm ² . By irradiating the surface of the channel layer with the laser light beam L for 30 μsec, the channel layer is heated to reconstruct amorphous silicon. At the same time, phosphorus (P) as a dopant is thermally diffused toward the channel layer from the drain 211 and the source 212 made of phosphorus (P) -doped amorphous silicon. Due to the crystal reconstruction of the channel layer and the carrier injection, the resistance value of the channel layer, which was a semiconductor, is lowered and transformed into the fixed resistor 25. For example, the fixed resistor 25 has a resistance value of 1 MΩ or less.

  Next, the electrical connection between the gate wiring of the driving transistor 22 of the light emitting pixel 11P and the additional circuit 26 is cut off (S30 in FIG. 6). In FIG. 5A, the cut portion is illustrated as B. As means for cutting off the electrical connection between the gate wiring of the driving transistor 22 and the additional circuit 26, for example, laser irradiation can be applied. As a laser condition to be used, for example, a laser oscillator using a YAG (Yttrium Aluminum Garnet) laser as a light source is used, and for example, the wavelength is 532 nm, the pulse width is 10 ns, and the power is 0.5 mW. In the case of this condition, if the wiring width of the electrical connection is, for example, 4 μm and the film thickness is 150 nm, the electrical connection is interrupted. At this time, as the wiring material for electrical connection, for example, the above-described laminated structure of alloy of Mo and W / aluminum (Al) / alloy of Mo and W can be cited.

  Finally, an interlayer insulating film 202 and a planarizing film 203 are formed so as to cover the fixed resistor 25, the drain electrode 213, the source electrode 214, the driving transistor 22, and the additional circuit 26. Examples of the material of the planarizing film 203 include a silicon oxide film (SiOx) and a silicon nitride film (SiN), and are formed by, for example, a CVD method or a sputtering method. Thereafter, the surface of the formed film is planarized by, for example, a CMP method.

  Note that a protective film may be formed between the interlayer insulating film 202 and the planarization film 203. The protective film has a function of preventing the circuit elements and circuit wirings formed in the drive circuit layer 11A from being deteriorated due to external environmental changes, and the circuit elements, the signal lines 12 and the gate wirings. It is formed so as to cover the circuit wiring.

  Through the above steps, the light emitting pixel that operates abnormally during the formation of the drive circuit is corrected, and the formation of the drive circuit layer 11A is completed. Thereafter, the light emitting layer 11B and the transparent sealing film 110 are sequentially formed on the drive circuit layer 11A.

  According to this correction method, for example, abnormal operation due to an open failure / short failure of a light emitting pixel that is determined to be abnormal in operation due to a failure of the selection transistor 21 or an additional circuit connected to the gate wiring of the drive transistor 22 when the drive circuit is formed. In the light emitting pixel determined to be, a fixed resistor is formed between the source and drain of the selection transistor. Therefore, the signal voltages of the plurality of light emitting pixels supplied to the light emitting pixel column to which the light emitting pixel 11P belongs are sequentially applied in real time from the signal line connected to the light emitting pixel 11P to the light emitting pixel 11P having the abnormal operation. The In this case, the light emitting pixel 11P appears to emit light with the light emission luminance obtained by averaging the respective light emission luminances of the light emitting pixel column in one frame period.

  Thus, for example, a light emitting pixel that is in a state where an accurate signal voltage is not supplied to the gate terminal of the drive transistor due to a failure in the selection transistor at the time of formation of the drive circuit or due to an open / short failure of the additional circuit In this light emitting operation, it is possible to emit light with a light emission luminance obtained by averaging the light emission luminances of the light emitting pixel columns. That is, it is possible to avoid the darkening of the light emitting pixels and to ensure high display quality in any display image.

  The image display in this embodiment is performed by performing the transformation to the fixed resistor 25 in step S20 and the cutting of the connection wiring between the gate wiring and the additional circuit 26 in step S30, all with the same laser processing apparatus. It is possible to simplify the correction process of the apparatus.

  Further, there may be a case where the step of cutting the connection wiring between the gate wiring and the additional circuit 26 in step S30 is not necessary. For example, when the electrical connection between the additional circuit 26 and the gate wiring is already cut off when the drive circuit is formed, or when the additional circuit including the storage capacitor 23 is operating normally due to an abnormal operation of the selection transistor 21 Etc. In these cases, only by changing the channel layer of the selection transistor 21 to a fixed resistor, it is possible to avoid the constant bright spots and the constant dark spots of the light emitting pixels 11P.

  Further, the transformation process to the fixed resistor 25 in step S20 and the cutting process of the connection wiring between the gate wiring and the additional circuit 26 in step S30 may not be performed in this order.

  As described above, the image display device and the correction method thereof according to the present invention have been described based on the embodiments. However, the image display device and the correction method according to the present invention are not limited to the above embodiments. Modifications obtained by various modifications conceived by those skilled in the art within the scope of the present invention without departing from the gist of the present invention and various devices incorporating the image display device according to the present invention are also included in the present invention.

  For example, the image display apparatus according to the present invention is built in a thin flat TV as shown in FIG. As a result, a bright flat or dark spot state of abnormal light emitting pixels is avoided, and a thin flat TV that ensures high display quality in any display image is realized.

  In the above-described embodiment, the selection transistor is changed to a fixed resistor to avoid the constant bright spot and the constant dark spot of the light emitting pixel. For example, the switching transistor included in the additional circuit is fixed resistor. By transforming into a body, the same effect may be obtained. For example, by changing the switching transistor of the additional circuit, which was always open, to a fixed resistor and making it always conductive, the voltage from the additional circuit corresponding to the signal voltage can be applied to the gate of the driving transistor. It becomes possible to improve the light emission state in accordance with the doting, darkening, or the like.

  INDUSTRIAL APPLICABILITY The image display apparatus and the correction method thereof according to the present invention are useful as displays for thin televisions, personal computers, and the like and a correction method thereof that require a large screen and high resolution.

DESCRIPTION OF SYMBOLS 1 Image display apparatus 10 Display panel 11, 11P Light emission pixel 11A Drive circuit layer 11B Light emission layer 12 Signal line 13 Scan line 14 Scan line drive circuit 15 Signal line drive circuit 20 Control circuit 21 Selection transistor 22 Drive transistor 23 Holding capacity element 24 Organic EL element 25 Fixed resistor 100 Substrate 103 Anode 104 Hole injection layer 105 Hole transport layer 106 Organic light emitting layer 107 Bank layer 108 Electron injection layer 109 Transparent cathode 110 Transparent sealing film 201 Gate insulating film 202 Interlayer insulating film 203 Planarization Film 211, 221 Drain 212, 222 Source 213, 223 Drain electrode 214, 224 Source electrode 215, 225 Gate electrode 226 Semiconductor layer

Claims (8)

An image display device comprising a plurality of light emitting pixels arranged in a matrix and a plurality of signal lines arranged corresponding to each light emitting pixel column,
Each of the plurality of light emitting pixels is
A drive transistor that generates a drain current according to the signal voltage by applying a signal voltage that determines light emission of the light emitting pixel from the signal line to the gate;
A selection transistor inserted between the signal line and the gate terminal of the driving transistor;
A light emitting element that emits light when the drain current flows;
In at least one light emitting pixel among the plurality of light emitting pixels,
An image display device in which a source and a drain of the selection transistor are transformed into a fixed resistor, and the signal line and the gate terminal of the driving transistor are always in conduction through the fixed resistor. The image display according to claim 1, wherein the fixed resistor is transformed by irradiating a laser on a channel layer made of a semiconductor formed between a source and a drain of the selection transistor of the one light emitting pixel. apparatus. Each of the plurality of light emitting pixels further includes:
An additional circuit capable of holding a voltage corresponding to the signal voltage from the signal line;
3. The electrical connection between the additional circuit and the gate wiring that electrically connects the gate terminal of the driving transistor and one of the source and the drain of the selection transistor is cut off in the one light emitting pixel. The image display device described. The image display device according to claim 3, wherein, in the one light emitting pixel, the electrical connection is interrupted by irradiating a laser to a connection portion between the gate wiring and the additional circuit. A drive transistor for converting a drain voltage corresponding to the signal voltage by applying a signal voltage for determining light emission from the signal line to the gate terminal, and a selection inserted between the signal line and the gate terminal of the drive transistor A method of correcting an image display device in which a plurality of light emitting pixels each including a driving circuit layer having a transistor and a light emitting layer having a light emitting element that emits light when a drain current flows is arranged in a matrix,
When forming the drive circuit layer,
An inspection step for inspecting all light emitting pixels to determine whether or not the signal voltage corresponding to the light emitting pixels is normally applied to the gate terminals of the drive transistors of the light emitting pixels;
The image display includes a transformation step of transforming the source and drain of the selection transistor of one light emitting pixel to a fixed resistor, in which it is determined that the signal voltage corresponding to the light emitting pixel is not normally applied in the inspection step. Device correction method. 6. The image display device correction according to claim 5, wherein in the transformation step, the channel layer made of a semiconductor formed between the source and drain of the selection transistor is irradiated with a laser to transform the channel layer into a fixed resistor. Method. Furthermore, when forming the drive circuit layer,
Electrical connection between an additional circuit capable of holding a voltage corresponding to the signal voltage from the signal line and a gate wiring electrically connecting the gate terminal of the drive transistor and one of the source and drain of the selection transistor The correction method of the image display apparatus of Claim 5 or 6 including the interruption | blocking step which interrupt | blocks. The method for correcting an image display device according to claim 7, wherein in the blocking step, the wiring is cut by irradiating a laser to the wiring that electrically connects the gate wiring and the additional circuit.

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