JP2010258334A - Thin film transistor device, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film transistor device that can form a circuit system in accordance with demands of users and customers in use sites, and to provide a method of manufacturing the thin film transistor device. <P>SOLUTION: The thin film transistor device is provided with a plurality of integrated circuit blocks 1 and 2 composed of TFTs, and matrix interconnects 3, 4, 5 and 6 intersecting one another in meshes so as to interconnect those integrated circuit blocks. The integrated circuit blocks are interconnected by printing a conductive material selectively on interconnect intersection portions of the matrix interconnects and so on in accordance with demands of users and customers in use sites, thereby constituting the circuit system. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a thin film transistor (hereinafter referred to as TFT) device and a method for manufacturing the same.

As a conventional technique, there is an example of an apparatus and a manufacturing method for connecting circuits using coating printing or paste material, which are disclosed in Patent Document 1 and Patent Document 2, for example.
In the example of Patent Document 1, it is possible to form a circuit by correcting and connecting passive elements such as capacitors and inductors by laser CVD or a coated printed conductive film.

  Further, in the example of Patent Document 2, so-called three-dimensional mounting that forms a high-density and large-capacity by filling the through-holes with a conductive paste and connecting the laminated thin film capacitors of the printed wiring board can be performed. .

Japanese Patent Laid-Open No. 07-130954 JP 2004-228190 A

  As a future technology, it is expected to realize an electronic device consisting of a thin-film substrate that can connect circuits by printing at the site of use by printing electrode wiring with a printer and configuring a circuit system based on electronic data. Is done.

  As an application example, when printing letters and pictures on tickets, cards, paper, product labels, etc. on the site of automatic ticket vending machines, vending machines, retail stores, etc. By writing electronic circuit systems and electronic storage information, or by forming electronic circuit systems using a printing machine on paper or film, based on electronic data via electronic storage media or the Internet. is there.

  As described above, these electronic devices are devices having a relatively large area of several centimeters to several tens of centimeters, or added to cards, labels, films, papers, etc. that have been manufactured by conventional printing. Since the device is used, it is necessary to reduce the manufacturing cost per unit area.

  In order to construct a circuit system in response to the demands of users and customers at the site of use using such equipment, a board with a logic circuit and a memory circuit is prepared in advance. It is necessary to selectively connect the wiring according to demands by a simple manufacturing method. As a circuit wiring connection technique, there is an example of the above-mentioned patent document, and a circuit is formed by connecting wiring by coating printing or paste material.

  However, all of the known technologies are connection of passive elements, and the manufacturing method and manufacturing board are printed wiring boards. Therefore, circuit systems including logic circuits and memory circuits can be used for cards, paper, product labels, etc. Further, it is difficult to form on a very thin substrate medium at the site of use.

  An object of the present invention is to provide a thin film transistor device having a plurality of integrated circuit blocks and capable of constructing a circuit system by performing wiring at a use site, and a manufacturing method thereof.

  As one mode for achieving the above object, an integrated circuit block including a first integrated circuit block and a second integrated circuit block in which an integrated circuit constituted by a thin film transistor is arranged, and the first integrated circuit block A plurality of output wirings and a plurality of input wirings of the second integrated circuit block intersect in a mesh pattern, and the output wirings and the input wirings are exposed in the vicinity of the intersection, and each of the output wirings An insulating film that electrically isolates the input wiring at each of the intersections, and a plurality of the intersections using a conductive material on the input wiring and the output wiring exposed at a use site A plurality of the output wirings and the plurality of input wirings are selectively connected by selectively forming connection wirings on the thin film transistor. Apparatus to be.

  In addition, a plurality of integrated circuit blocks including a first integrated circuit block and a second integrated circuit block in which an integrated circuit composed of thin film transistors is arranged, a plurality of output wirings of the first integrated circuit block, and the first A plurality of input wirings of the two integrated circuit blocks are crossed in a mesh pattern, and the output wiring and the input wiring are exposed in the vicinity of the intersection, and the output wiring and the input wiring are connected to each other. A thin film transistor device comprising: an insulating film that is electrically separated at the intersection, and a protective film provided to cover at least the matrix wiring.

  In addition, a plurality of integrated circuit block portions formed of thin film transistors, a matrix wiring having a mesh-shaped intersection that connects the integrated circuit block portions arranged orthogonal to each other, and each of the intersection portions A method of manufacturing a thin film transistor device including a first insulating film that electrically isolates orthogonal wirings, the step of forming a plurality of first wirings constituting the matrix wiring on a substrate, Forming the first insulating film on one wiring; forming the matrix wiring on the first insulating film; forming a second wiring orthogonal to the first wiring; and Removing the first insulating film in the vicinity and exposing the first wiring; and the base in a state where the first wiring and the second wiring are exposed in the vicinity of the intersection. Paste or protective film on, applying a protective to material on the substrate, a manufacturing method of a thin film transistor device characterized by having the steps of forming a protective film and dried.

  It is possible to provide a thin film transistor device having a plurality of integrated circuit blocks and capable of constructing a circuit system by performing wiring at a use site and a manufacturing method thereof.

1 is a plan view of a thin film transistor device according to a first embodiment. 1 is a cross-sectional structural view of a main part of a thin film transistor device according to a first embodiment. It is a principal part top view of the thin-film transistor apparatus which concerns on a 1st Example. 1 is a circuit diagram of a thin film transistor device according to a first embodiment. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor device concerning a 1st Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor device concerning a 1st Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor device concerning a 1st Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor device concerning a 1st Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor device concerning a 1st Example. It is principal part sectional structure drawing which shows the manufacturing process performed on a use site using the thin-film transistor apparatus which concerns on a 1st Example. It is a top view of the thin-film transistor apparatus which concerns on a 2nd Example. It is principal part sectional drawing of the thin-film transistor apparatus which concerns on a 3rd Example. It is principal part sectional drawing of the thin-film transistor apparatus which concerns on a 4th Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor apparatus which concerns on a 5th Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor apparatus which concerns on a 5th Example. It is principal part sectional drawing which shows the manufacturing process of the thin-film transistor apparatus which concerns on a 5th Example. It is a top view of the thin-film transistor apparatus which concerns on a 6th Example. It is a top view of the multifunctional integrated circuit device based on a 7th Example.

The gist of the form for carrying out the invention is as follows.
A thin film substrate having a plurality of integrated circuit blocks constituted by TFTs, horizontal and vertical integrated circuit blocks of a matrix memory, and matrix wiring crossed in a mesh pattern for mutually connecting these integrated circuit blocks Is prepared in advance.

  The connection between the mutual integrated circuit blocks is a method selected from the group of the coating method, the dropping method, and the printing method at each wiring intersection of the matrix wiring according to the request of the user or customer at the use site, Alternatively, a desired circuit system is configured by selectively providing a conductive material by a method combining methods selected from the above group.

  The thin film substrate to be used is a thin film substrate that does not break even when bent, such as a plastic film, paper, a thin film metal substrate, and a thin film glass substrate. A TFT is a TFT that can be formed on a thin film substrate made of an organic semiconductor, an oxide semiconductor, a Si semiconductor, or the like that does not break even when bent. The conductive material is a material that can be formed from a solution, such as a metal ink or an organic conductive material.

  In addition, in order to make it easy to provide the conductive material of the solution at the connection part, the uppermost layer of the insulating film in the vicinity of the opening part of the connection part (near the matrix wiring intersection) is liquid repellent, and the insulating film inside the opening part The structure is lyophilic on the sides. Here, the vicinity means within the range of the alignment accuracy between the connection material forming conductive material supply section (print head or the like) and the connection section.

  Furthermore, on the integrated circuit mounting thin film substrate prepared in advance at the manufacturing site, until the electrode wiring is formed by the coating method, the dropping method, and the printing method at the usage site, the matrix wiring connecting portion intersecting in a mesh shape, In order to protect the wiring exposed portion, a protective film is provided on the thin film substrate. In use, the protective film is peeled off, and the device is destroyed due to charging at that time. Therefore, a structure is used in which a diode for preventing destruction due to static electricity is connected to the matrix wiring intersecting in a mesh pattern.

The gist of the manufacturing method of connecting the matrix wiring crossing in a mesh pattern of this thin film transistor device is as follows.
(1) A first lyophilic insulating film is formed on the first wiring, and then the second wiring is formed so as to intersect the first wiring, and then the second wiring is formed on the second wiring. 2 lyophilic insulating film is formed.
(2) A liquid-repellent third insulating film or a liquid-repellent self-assembled monolayer (Self-Assembled-Monolayer, hereinafter abbreviated as SAM film) is provided on the upper surface of the second insulating film.
(3) Open an insulating film at the intersection of the first wiring and the second wiring.
(4) A film that protects the exposed wiring portion of the opening is attached, or a material that protects the exposed wiring portion is applied and dried, and the protective film is provided on the thin film transistor device substrate.
(5) After the protective film is peeled off at the site where the thin film transistor device is used, a conductive material is provided at a part of the wiring intersection by a coating method, a dropping method, or a printing method, and the first wiring and the second wiring Connect the wires selectively.

As described above, an integrated circuit composed of TFTs and a thin film substrate provided with a memory circuit are prepared in advance, and can be used at the site of use by selectively connecting wiring with a simple manufacturing method such as a printer. The circuit system can be formed on a thin-film substrate medium such as a card, a film, paper, or a product label at a reduced manufacturing cost according to the demands of a person or a customer.
Hereinafter, the embodiment will be described in detail.

  A first embodiment will be described with reference to FIGS. In this embodiment, the integrated circuit block is a combination of logic circuits, and the TFTs constituting the integrated circuit are organic semiconductor transistors formed on a flexible thin film substrate. It is the example connected by the printing manufacturing method using a functional material.

  First, the overall configuration of the present embodiment will be described. FIG. 1 is a schematic plan view for explaining interconnection between integrated circuit blocks, and shows a part of a plurality of integrated circuit blocks. The integrated circuit blocks 1 and 2 are composed of combinations of logic circuits such as NAND circuits, NOR circuits, AND circuits, OR circuits, flip-flop circuits, inverters, and the like. A matrix wiring in which input wirings 4 of a plurality of logic circuits arranged in the integrated circuit block 1 and output wirings 3 of a plurality of logic circuits of another integrated circuit block not shown in the figure intersect in a mesh pattern. At the part of the intersection, the input wiring 4 and the output wiring 3 are connected to the opening of the insulating film with a conductive material by a printing method, and the connection wiring 7 is formed to meet the needs of users and customers. And selectively connected.

  Similarly, the input wiring 6 of the integrated circuit block 2 and the output wiring 5 of the integrated circuit block 1 form a matrix wiring, and at a part of the intersection, the input wiring 6 and the output wiring 5 are filled with a conductive material. The connection wiring 8 formed in this way is selectively connected. In this way, a plurality of integrated circuit blocks are connected to each other to form a desired logic circuit. Reference numerals 50, 51, 52, and 53 denote measurement pads for wiring connection inspection. These pads can be omitted for simple circuits.

  The integrated circuit of this embodiment can be applied to an integrated circuit constituted by single channel TFTs, an integrated circuit constituted by complementary TFTs of bipolar channels, and the like. In this embodiment, an integrated circuit using a p-type TFT is taken as an example.

  FIG. 2 shows a cross-sectional structure of the TFTs constituting the logic circuit of the integrated circuit block and matrix wiring cross-connecting portions. FIG. 4 is a circuit diagram of a two-input NAND circuit given as an example from among logic circuits, and FIG. 3 is a plan view of a circuit constituted by TFTs. In FIG. 3, inputs (IN1) and (IN2) are the gate electrodes 31 of the TFTs. The output (OUT) is the drain electrode 33 of the TFT and is connected to the drain electrode 39 of the power TFT. A part of the TFT is shown in the sectional view of the TFT in FIG. 2, and the gate electrode 101 in FIG. 2 corresponds to the input gate electrode 31 in FIG. Further, the drain electrode 104 corresponds to the reference numeral 33, the source electrode 103 corresponds to the reference numeral 32, and the organic semiconductor 106 corresponds to the reference numeral 34.

  In the integrated circuit block of FIG. 1, a plurality of logic circuits are arranged, the TFT gate electrode 101 corresponds to the input wiring of the integrated circuit block, the drain electrode 104 corresponds to the output wiring of the integrated circuit block, The gate insulating film 102 becomes an insulating film that separates the input wiring and the output wiring. The matrix wiring cross-connection portion shown in FIG. 2 represents a state in which the gate electrode 101 intersects the drain electrode 105 of the TFT constituting the logic circuit of another integrated circuit block. The insulating films 102 and 107 around the connection portion are opened, and the gate electrode 101 and the drain electrode 105 are connected by a connection wiring 109 formed by filling the opening with a conductive material by a printing method.

  In this manner, the interconnection of the input wiring and the output wiring is selectively performed between different integrated circuit blocks. Here, reference numeral 100 shown in FIG. 2 is a thin film substrate, reference numeral 108 is a liquid repellent film, reference numeral 35 shown in FIG. 3 is a source wiring, reference numeral 36 is an output drain wiring, reference numeral 37 is a gate electrode, and reference numeral 38 is a drain. Reference numeral 40 denotes a drain wiring, and reference numeral 41 denotes a wiring connection opening.

[Basic manufacturing process]
The TFT in the first embodiment is an example of an organic semiconductor transistor having a bottom gate structure in which a gate electrode is below the semiconductor layer. In this example, the gate electrode, the source / drain electrode, the semiconductor layer, and the conductive material for wiring connection are processed by, for example, coating, dropping, or printing. For this reason, a TFT can be directly formed on a flexible thin film substrate by a simple method.

  The manufacturing process of this thin film transistor device will be described with reference to the cross-sectional structure diagrams of FIGS. 5a to 5e and FIG. 6, taking the cross-sectional structure of the device shown in FIG. 2 as an example. Since this TFT uses a coating printing method and all process temperatures are 200 ° C. or less, it is possible to directly form a TFT on a thin substrate with low heat resistance.

  First, the manufacturing process of the bottom gate structure TFT will be described. As shown in FIG. 5a, on a flexible thin film substrate 100 such as a thin plastic film or paper having an area of approximately 20 cm × 30 cm and a film thickness of, for example, 100 μm or less, a film thickness of 50 nm to After the gate electrode wiring 101 having a thickness of about 100 nm is provided, a coating type gate insulating film 102 having a thickness of about 100 nm to 500 nm is applied.

  Next, as shown in FIG. 5b, a source having a film thickness of about 10 nm to 100 nm by using a metal ink of, for example, Au, Ag, or Cu material and a high-precision printing patterning technique such as reverse offset printing or inkjet. The drain electrode wirings 103, 104, and 105 are selectively applied. At this time, the width and interval of the source and drain electrodes are about 5 μm or less for the source electrode 32, the drain electrode 33, and the source electrode 39 in FIG. The drain wiring 40 is, for example, 20 μm or more. For this electrode wiring, for example, other wiring materials such as Cu and Al can be patterned by a photolithography technique using a direct exposure apparatus that does not require a mask.

  Next, the coating type low molecular organic semiconductor film 106 is selectively applied by a printing method such as inkjet or flexo. Here, as a method for patterning the semiconductor layer, it is possible to form a semiconductor film by a coating method or a dropping method, and then pattern the semiconductor film or selectively form a semiconductor film by mask vapor deposition. In this way, the main part of the bottom gate TFT is formed.

  Thereafter, as shown in FIG. 5c, a lyophilic protective insulating film 107 having a thickness of about 1 μm and a lyophobic insulating film having a thickness of 20 nm or less, or a SAM film 108 having a lyophobic group are applied. . Here, the liquid repellency and the lyophilic property refer to properties of the conductive material for forming the connection wiring with respect to the solution.

  Next, as shown in FIG. 5d, the insulating films 102, 107, and 108 around the intersection of the gate electrode wiring 101 and the drain electrode wiring 105 are opened by selective etching or laser processing. Thus, a part of the gate electrode wiring 101 and the drain electrode wiring 105 in the wiring connecting portion is exposed.

  Next, in order to protect the partially exposed gate electrode wiring 101 and drain electrode wiring 105 from dust, dirt, scratches and the like until the wiring is connected at the site of use, as shown in FIG. 110 is pasted. This protective film is a film in which a rubber or acrylic adhesive layer is provided on a thin film made of a material such as polyethylene, polypropylene, polyester, polyimide, polyvinyl chloride or the like having a film thickness of approximately 100 μm or less. Yes, it should have a suitable adhesive strength so that it can be easily peeled off during use.

  The area to which the protective film is applied may be the entire surface of the thin film substrate, but the effect of this embodiment can be obtained even in a part including the matrix wiring area that is selectively interconnected at the site of use. The protective film can also be formed by directly applying and drying a coating type insulating film material. However, when the thin film transistor device is packed in a clean room and transported to a use site in a short time to form the connection wiring, the protective film may not be provided.

  In this way, an arbitrary circuit is formed on the integrated circuit mounting thin film substrate prepared in advance at the site of use. First, as shown in FIG. 6, the protective film 110 is peeled off. In the next operation, the peeling may be performed manually before setting the substrate on the printing press, or may be performed automatically by installing a peeling device on the printing press.

  Next, necessary logic circuits are connected for the circuit system configuration according to the user's request. For example, a printing machine 111 such as an ink jet is aligned with the opening, and the coating-type conductive material 109 ′ is selectively filled only in necessary portions. At this time, the horizontal width of the opening is about 50 μm, and even if a misalignment of about 30 μm occurs in the alignment of the printing head of the printing machine 111 with the gate insulating film 102 inside the opening, Since the side surface of the protective insulating film 107 is lyophilic and the uppermost film 108 is liquid repellent, only the opening can be filled with the coating conductive material 109 ′.

  In this way, the opening is selectively filled with metal ink or a coating type conductive organic material, and dried at room temperature or a temperature of 100 ° C. or lower to form the connection wiring 109, which is necessary for forming a circuit. The gate electrode wiring and the drain electrode wiring are connected. For example, in FIG. 3, the gate electrode wiring 37 and the drain electrode wiring 40 are connected by providing the opening 41 in this manufacturing process and filling the conductive material to form the connection wiring 109.

  As a method of aligning the print head of the printing machine 111 and the opening 41, the positional accuracy of the wiring is about several tens of μm. Therefore, in the procedure of supplying paper to a normal printing machine, Alignment of the print head and the opening is performed by alignment, but if it is necessary to do it more reliably, the alignment mark is patterned in advance when the wiring is formed, and the printer recognizes the alignment pattern. It is also possible to provide an alignment mechanism so as to align the opening with higher accuracy when printing the conductive material.

  At this time, the opening not filled with the conductive material 109 ′ may be left as it is, but after the conductive material is printed, a protective film covering the entire opening may be attached. Furthermore, it is also possible to fill the coating-type organic polymer insulating film into the opening not filled with the conductive material 109 ′ by a printing machine such as an ink jet. In this case, a plurality of inkjet heads may be prepared for the conductive material and the insulating film material, and the connection portion and the non-connection portion may be separately applied in the manner of applying a plurality of colors with an inkjet printer.

  In this way, as shown in FIG. 2, the gate electrode wiring 101 and the drain electrode wiring 105 are connected by the connection wiring 109, and as shown in FIG. 1, by the connection wirings 7 and 8 formed using the conductive material, Input wiring and output wiring can be selectively connected.

  Further, in order to inspect the connection state of the wiring at the site of use, a measurement pad is provided in advance at the time of wiring formation, and a probe is applied to this to measure the connection state electrically. For example, when the output wiring 3 and the input wiring 4 are connected by the connection wiring 7 formed using a conductive material, a probe is applied to the measurement pads 50 and 51 to inspect the conduction state. Similarly, when the output wiring 5 and the input wiring 6 are connected by the connection wiring 8 formed using a conductive material, a probe is applied to the measurement pads 52 and 53 to inspect the conduction state. If there is no continuity, the conductive material is filled again. In this way, the input wiring and the output wiring can be reliably connected.

  The thin film substrate 100 used in the present embodiment can be implemented by, for example, a plastic substrate such as polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethersulfone, or paper, but is not limited to this embodiment. However, the TFT of this embodiment can be formed on a metal thin film, a glass substrate, or anything that can be printed.

The electrode wiring materials for the gate electrode 101 and the source / drain electrode wirings 103, 104, 105 are metal inks such as Ag ink, Au ink, Cu ink, conductive organic materials such as PEDOT (polyethylene dioxythiophene), transparent Conductor materials, Al electrode wiring materials, and the like are possible. Coating type insulating films for the gate insulating film 102 and the protective insulating film 107 are organic polymer insulating films such as epoxy, benzocyclobutene, polymethyl methacrylate, polyvinyl alcohol, polyimide, polyperfluoroalkynyl biyl ether, polyacrylate, A coating-type SiO ₂ film or the like is possible.

  Coating type organic semiconductor materials for the semiconductor layer 106 include p-type semiconductors such as pentacene, derivatives thereof, low molecular organic materials such as triisopropylsilylethynylpentacene, triethylsilylethynylanthradithiophene, tetrabenzoporphyrin, P3HT (poly 3 hexylthiophene), F8T2 (fluorenethiophene copolymer), and the like, and n-type semiconductors include hexadecafluorocopper phthalocyanine and perylene diimide derivatives.

  Furthermore, for example, a coating type oxide semiconductor, coating type Si, or the like is also possible. The conductive material for the connection wiring 109 can be a metal ink such as Ag ink, Au ink, or Cu ink, or a conductive organic material such as PEDOT (polyethylene dioxythiophene).

  Examples of the production method of the electrode and the semiconductor layer include an inkjet printing method, a flexographic printing method, an offset printing method, a gravure printing method, an electrophotographic method, and a normal printing production method such as a dispenser method. Sputtering can be used.

  According to the present embodiment, it is possible to provide a thin film transistor device having a plurality of integrated circuit blocks and capable of constructing a circuit system by performing wiring at a use site, and a manufacturing method thereof. In addition, a protective film is formed on the surface of the thin film transistor device and peeled off at the site of use to protect partially exposed gate electrode wiring and drain electrode wiring from dust, dust, scratches, etc. until connection wiring formation. be able to. Further, by providing a measurement pad for inspecting the connection state of the wiring, it is possible to inspect the conduction state of the connection wiring formed at the use site. Further, by forming a liquid repellent material film on the upper surface of the lyophilic protective insulating film provided in the thin film transistor device, even if the conductive material for connection wiring is supplied to a position shifted from the connection opening at the site of use. Then, it can be drawn into the opening and a good connection wiring can be formed.

  A second embodiment will be described with reference to FIG. In addition, it describes in the column of the form for inventing and Example 1, and the matter which is not described in a present Example is the same as those.

  FIG. 7 is a schematic plan view for explaining the connection between the integrated circuits around the memory device (thin film transistor device) according to the present embodiment. The horizontal peripheral circuit 10, the vertical peripheral circuit 11, and the matrix wiring are shown in FIG. Some are shown. A block of the peripheral circuit 10 in the horizontal direction is constituted by a data line selection circuit, a read circuit, a buffer circuit, etc. for each storage bit, and a block of the peripheral circuit 11 in the vertical direction is constituted by each word line selection circuit, a buffer circuit, etc. The block of the integrated circuit 12 includes a decoder circuit, a clock generation circuit, and the like. Wirings 13 arranged in the horizontal direction as data lines and wirings 14 arranged in the vertical direction as word lines form a matrix wiring intersecting in a mesh pattern, and wirings arranged in a horizontal direction at a part of each intersection. Wirings 14 arranged in a direction perpendicular to 13 are selectively connected by connection wirings 15 formed by manually filling conductive material in the openings of the insulating film. One bit is stored depending on the presence or absence of this connection.

  Similarly to the first embodiment, the connection state is also electrically measured by applying a probe to a measurement pad (not shown in FIG. 7 because it is the end of the wirings 13 and 14). As another method, after filling with a conductive material, information can be read and inspected by a reading device of a memory device. In this case, no measurement pad is required. In this way, when the continuity state is inspected and there is no continuity, the wiring can be reliably connected by filling the conductive material again.

  The cross-sectional structure of the TFT constituting the peripheral circuit and integrated circuit of this memory device, the wiring connection portion, and the manufacturing method thereof are the same as in the first embodiment. Also in this embodiment, the wiring arranged in the horizontal direction and the wiring arranged in the vertical direction on the peripheral circuit, the integrated circuit, and the matrix wiring mounting thin film substrate prepared in advance by the printing method using the coating type conductive material. Therefore, it is possible to write an arbitrary storage bit according to a request from the user or customer by a printing method at the use site.

  According to the present embodiment, the same effect as in the first embodiment can be obtained. Further, a memory device can be provided as the thin film transistor device.

  A third embodiment will be described with reference to FIG. In addition, it describes in the column of the form for inventing, Example 1, and Example 2, and the matter which is not described in a present Example is the same as them.

  FIG. 8 shows a cross-sectional structure of TFTs constituting the integrated circuit according to the third embodiment and matrix wiring cross-connecting portions.

  In Example 3, a semiconductor transistor having a top gate structure in which the gate electrode is above the semiconductor layer is taken as an example. The outline of the manufacturing method will be described with reference to FIG. First, source and drain electrode wirings 121 and 122 having a thickness of about 10 nm to 100 nm are provided on a flexible thin film substrate 120.

  Next, after the semiconductor film 123 is selectively provided, a lyophilic gate insulating film 124 with a thickness of about 100 nm to 500 nm is formed. Next, gate electrode wirings 125 and 126 having a film thickness of about 50 nm to 100 nm are formed. Thus, the main part of the top gate structure TFT is formed. Thereafter, a liquid repellent insulating film having a film thickness of 20 nm or less or a SAM film 127 having a liquid repellent group is applied. Note that in the case of using a SAM film that does not provide wettability to both the insulating film and the conductive film, it may be formed at least on the periphery of the opening of the insulating film.

  Next, the insulating films 124 and 127 around the intersection of the drain electrode wiring 122 and the gate electrode wiring 126 are opened by selective etching or laser processing. In this way, the drain electrode wiring 122 and the gate electrode wiring 126 in the wiring connection part are partially exposed.

  In this manner, necessary circuits are connected to the integrated circuit-mounted thin film substrate prepared in advance for an arbitrary system configuration in accordance with the user's request at the site of use. For this purpose, the connection wiring 128 is formed by selectively filling the conductive material only in the opening portions where necessary. Thus, the drain electrode wiring 122 and the gate electrode wiring 126 are connected as shown in FIG. 8, and the matrix wirings can be selectively connected to each other as shown in FIGS.

  According to the present embodiment, the same effect as in the first embodiment can be obtained. In addition, a thin film transistor device including a top-gate semiconductor transistor and a method for manufacturing the same can be provided.

  A fourth embodiment will be described with reference to FIG. In addition, it describes in the column of the form for inventing, Example 1, and Example 2, and the matter which is not described in a present Example is the same as them.

  FIG. 9 shows a cross-sectional structure of a TFT constituting the integrated circuit according to the fourth embodiment and a matrix wiring cross-connecting portion.

  Example 4 is an example of a bottom-gate semiconductor transistor in which the gate electrode is below the semiconductor layer as in Example 1. The outline of the manufacturing method will be described with reference to FIG. First, a gate electrode wiring 141 having a thickness of about 50 nm to 100 nm is provided on a flexible thin film substrate 140, and then a gate insulating film 142 having a thickness of about 100 nm to 500 nm is formed.

  Next, after forming source and drain electrode wirings 143, 144, and 145 having a thickness of about 10 nm to 100 nm, a semiconductor film 146 is selectively provided. In this way, the main part of the bottom gate TFT is formed. Next, after forming a lyophilic protective insulating film 147 having a thickness of about 1 μm, the openings of the insulating films 142 and 147 and the wiring 148 are patterned to form a circuit.

  Next, a liquid repellent insulating film having a thickness of 20 nm or less or a SAM film 149 having a liquid repellent group is provided. Note that in the case of using a SAM film that does not provide wettability to both the insulating film and the conductive film, it may be formed at least on the periphery of the opening of the insulating film. Next, the insulating films 142, 147, and 149 around the intersection of the gate electrode wiring 141 and the drain electrode wiring 145 are opened by selective etching or laser processing. In this way, the gate electrode wiring 141 and the drain electrode wiring 145 in the wiring connection part are partially exposed.

  In this way, necessary circuits are connected to the integrated circuit-mounted thin film substrate prepared in advance for an arbitrary system configuration in accordance with the demands of users and customers at the site of use. For this purpose, only a necessary portion of the opening is selectively filled with a conductive material, and the connection wiring 150 is formed. In this way, the gate electrode wiring 141 and the drain electrode wiring 145 are connected as shown in FIG. 9, and the matrix wirings can be selectively connected to each other as shown in FIGS.

  Also in this embodiment, the same effect as that of Embodiment 1 can be obtained.

  A fifth embodiment will be described with reference to FIGS. 10a to 10c. In addition, it describes in the column of the form for inventing, Example 1, and Example 2, and the matter which is not described in a present Example is the same as them.

  10A to 10C are diagrams showing a manufacturing process of the thin film transistor device according to the fifth embodiment, and show a cross-sectional structure of a TFT constituting an integrated circuit and a matrix wiring cross-connecting portion.

  Example 5 is also an example of a semiconductor transistor having a bottom gate structure. The outline of the manufacturing method will be described with reference to FIGS. First, after a gate electrode wiring 161 having a film thickness of about 50 nm to 100 nm is provided on a flexible thin film substrate 160, a coating type gate insulating film 162 is not formed on the entire surface by using a printing machine such as an inkjet. The film is selectively dropped so that the film thickness is about 100 nm to 500 nm only at the intersection of the gate electrode wiring and the source / drain electrode wiring. At this time, the gate insulating film 162 is not dropped in a portion where it is necessary to connect the gate electrode wiring and the source / drain electrode wiring in the circuit configuration.

  Next, after forming source and drain electrode wirings 163, 164, and 165 having a thickness of about 10 nm to 100 nm, a semiconductor film 166 is selectively provided. Thus, the main part of the bottom gate structure TFT is formed (FIG. 10a).

  Next, after forming a protective insulating film 167 having a thickness of about 1 μm, the insulating films 162 and 167 are opened by etching or laser processing so as to surround the entire matrix wiring region. Thus, the gate electrode wiring 161 and the drain electrode wiring 165 in the matrix wiring region are partially exposed (FIG. 10b).

  In this way, necessary circuits are connected to the integrated circuit-mounted thin film substrate prepared in advance for an arbitrary system configuration in accordance with the demands of users and customers at the site of use. For that purpose, the connection type wiring material 168 is formed by selectively dropping the coating type conductive material only at a necessary portion by a printing machine such as an ink jet (FIG. 10C). In this manner, the gate electrode wiring 161 and the drain electrode wiring 165 are connected, and the matrix wirings can be selectively connected to each other as shown in FIGS.

  Also in this embodiment, the same effect as that of Embodiment 1 can be obtained. Furthermore, it is not necessary to form a liquid repellent film on the protective insulating film, and the manufacturing process is simplified.

  A sixth embodiment will be described with reference to FIG. In addition, it describes in the column of the form for inventing or any of Example 1- Example 5, and the matter which is not described in a present Example is the same as them.

  The sixth embodiment is an example in which an electrostatic breakdown preventing diode for preventing element breakdown due to peeling charging of the protective film is connected to the matrix wiring. FIG. 11 is a schematic plan view when this diode connection is applied to the memory device shown in FIG.

  In this embodiment, a film that protects the partially exposed gate electrode wiring and drain electrode wiring from dust, dirt, scratches, etc. until the wiring is connected at the site of use, such as a coating type polyimide material. The coating type organic insulating film material was formed by coating and drying.

  At the site where the thin film transistor device is used, the protective film is peeled off, and then a conductive material is selectively provided at the wiring intersections to connect the matrix wirings. In order to prevent element destruction due to the above, the electrostatic breakdown preventing diodes 20 and 22 are connected to the wiring 13 arranged in the horizontal direction as data lines and the wiring 14 arranged in the vertical direction as word lines, respectively. This diode was formed by so-called TFT diode connection in which the gate electrode and drain electrode of the TFT constituting the circuit were connected. Reference numerals 21 and 23 denote ground lines.

  In addition, when peeling a protective film, you may operate an ionizer. As a result, static electricity can be quickly eliminated, and dust adhesion due to charging can be reduced.

  According to the present embodiment, the same effect as in the first embodiment can be obtained. Furthermore, by providing an electrostatic breakdown prevention diode, a thin film transistor device can be provided that can prevent element breakdown even when static electricity is generated when the protective film is peeled off from the thin film transistor device.

  A seventh embodiment will be described with reference to FIG. In addition, it describes in the column of the form for inventing and any of Example 1- Example 6, and the matter which is not described in a present Example is the same as them.

The seventh embodiment is an example of an apparatus in which a multifunctional integrated circuit is provided on a flexible thin film substrate. Besides the integrated circuit also includes a display device and batteries, RF-ID; functions and called (R adio F requency ID entification wireless identification device), having both a display function. This device is applied to an electronic card that is thin and light and does not break even when bent, an electronic label attached to a ticket, a product, a tag, an electronic paper, or the like.

  FIG. 12 is a plan view showing the multi-function integrated circuit device according to this embodiment in a block diagram. Each function is provided on a flexible thin film substrate 200. For example, in an example applied to an electronic card, an area is approximately 5 cm × 10 cm, and a thin film substrate having a film thickness of about 1 mm is used and attached to an article. In the example of the attached electronic label, a thin film substrate having an area of about 10 cm × 15 cm and a film thickness of 100 μm or less is used.

  The mounting functions include a resonance circuit 201 composed of an antenna and a capacitor, a rectification / smoothing circuit 202 composed of a diode and a capacitor, a modulation circuit 203 composed of a TFT, a diode and a capacitor, a digital circuit 204, a battery 205, and a display unit 206. The digital circuit 204 includes an oscillator, a code generator, a memory, an arithmetic circuit, and the like, and matrix wiring interconnected by a manufacturing method such as printing at a use site is included in the block of the digital circuit 204. The battery 205 includes a thin and flexible solar battery, a rechargeable secondary battery, and the like.

  These functional blocks can be arranged below the display unit 206 to the extent that there is no problem in realizing the functions. The display unit 206 includes, for example, an electronic display device such as a thin and flexible memory reflective display device, an organic EL display device, and a liquid crystal display device. This is an area where a picture is displayed.

  These integrated circuits and circuits and wirings for driving functional devices such as batteries and display devices are composed of the TFTs described in the above embodiments, electrode wirings constituting the TFTs, TFT capacitors, TFT diodes, and the like. If necessary, the matrix wirings included in the digital circuit 204 are interconnected by a printing method such as inkjet, as required at the site of use.

  In addition, functional devices such as batteries and display devices are formed of a coating material or a laminate film. Therefore, the highly functional flexible integrated circuit device of this embodiment can be easily and inexpensively formed on a flexible thin film substrate by a manufacturing method such as a printing method or a laminate film. Further, by using such an apparatus and manufacturing method, it is possible to form an arbitrary circuit and write to a memory at the site of use.

  In the embodiments described above, various modifications such as the substrate area, material, patterning dimensions, specifications, manufacturing conditions, and manufacturing method can be made without departing from the spirit of the present invention. Also, the application of this apparatus is not limited to these embodiments. For example, a large area sensor array having an area of approximately 50 cm × 50 cm or a large screen active matrix image display device on a glass substrate having an area of approximately 1 m × 1 m can be wired at the site of use. In these embodiments, the coating printing method is used as an example of the TFT manufacturing method. However, the present invention is not limited to this. For example, vacuum film formation such as mask vapor deposition and sputtering, and patterning such as photolithography / etching. TFTs, electrodes, and wiring can also be formed by combining some methods.

  As described above in detail, according to this embodiment, in particular, a TFT integrated circuit substrate and a flexible multi-function integrated circuit device, in particular, excellent in thin and light weight, impact resistance and flexibility, are simple and low in production cost. It is possible to provide a thin film transistor integrated circuit substrate, a multi-function integrated circuit device, and a manufacturing method thereof, which can be connected to an integrated circuit by a printing method of a conductive material that can be reduced. In addition, by applying these electronic devices at various usage sites, on-site formation of integrated circuits and writing of information on storage devices can be performed on thin multi-function integrated circuit devices according to the demands of users and customers. It becomes possible to do.

DESCRIPTION OF SYMBOLS 1, 2 ... Integrated circuit block, 3 ... Output wiring, 4 ... Input wiring, 5 ... Output wiring, 6 ... Input wiring, 7, 8 ... Connection wiring, 10 ... Peripheral circuit, 11 ... Peripheral circuit, 12 ... Integrated circuit, DESCRIPTION OF SYMBOLS 13 ... Wiring, 14 ... Wiring, 15 ... Connection wiring, 20 ... Diode, 21 ... Ground line, 22 ... Diode, 23 ... Ground line, 31 ... Input gate electrode, 32 ... Source electrode, 33 ... Drain electrode, 34 ... Semiconductor Layer ... 35 ... Source wiring, 36 ... Output drain wiring, 37 ... Gate electrode, 38 ... Drain electrode, 39 ... Source electrode, 40 ... Drain wiring, 41 ... Wiring connection opening, 50, 51, 52, 53 ... Wiring connection Measurement pad for inspection, 100 ... thin film substrate, 101 ... gate electrode, 102 ... gate insulating film, 103, 104, 105 ... source / drain electrode wiring, 106 ... semiconductor layer, 107 ... Protective insulating film 108 ... Liquid repellent film 109 '... Conductive material 109 ... Connection wiring 110 ... Protective film 111 ... Printing machine 120 ... Thin film substrate 121, 122 ... Source / drain electrode wiring 123 ... Semiconductor layer 124 ... Gate insulating film 125, 126 ... Gate electrode 127 ... Liquid repellent film 128 ... Connection wiring 140 ... Thin film substrate 141 ... Gate electrode 142 142 Gate insulating film 143 Source / drain electrode wiring, 146... Semiconductor layer, 147... Protective insulating film, 148... Wiring, 149 .. liquid repellent film, 150. 164, 165 ... source / drain electrode wiring, 166 ... semiconductor layer, 167 ... protective insulating film, 168 ... connection wiring, 200 ... thin film substrate, 201 ... resonance Road, 202 ... rectifying and smoothing circuit, 203 ... modulation circuit, 204 ... digital circuit, 205 ... battery, 206 ... display unit.

Claims (16)

An integrated circuit block including a first integrated circuit block and a second integrated circuit block in which an integrated circuit composed of thin film transistors is disposed;
Matrix wiring in which a plurality of output wirings of the first integrated circuit block and a plurality of input wirings of the second integrated circuit block cross like a mesh, and the output wiring and the input wiring are exposed in the vicinity of the intersection. When,
An insulating film that electrically separates each of the output wiring and the input wiring at each of the intersections;
On the use site, a plurality of the output wirings and the plurality of input wirings are formed on the exposed input wirings and the output wirings by selectively forming connection wirings at the plurality of intersections using a conductive material. Are selectively connected to each other. The thin film transistor device according to claim 1.
The thin film transistor device, wherein the first integrated circuit block is a horizontal readout circuit block of a storage device, and the second integrated circuit block is a vertical scanning circuit block. A plurality of integrated circuit blocks including a first integrated circuit block and a second integrated circuit block in which an integrated circuit composed of thin film transistors is disposed;
Matrix wiring in which a plurality of output wirings of the first integrated circuit block and a plurality of input wirings of the second integrated circuit block cross like a mesh, and the output wiring and the input wiring are exposed in the vicinity of the intersection. When,
An insulating film that electrically isolates each of the output wiring and the input wiring at each of the intersections;
A thin film transistor device comprising: a protective film provided to cover at least the matrix wiring. The thin film transistor device according to claim 1 or 2,
The connection wiring is formed of a conductive material formed by a method selected from the group consisting of a coating method, a dropping method, and a printing method, or a method combining the methods selected from the above group. apparatus. The thin film semiconductor device according to claim 4,
The thin film transistor device, wherein the conductive material is a metal material or an organic conductive material. The thin film transistor device according to claim 1,
The region of the matrix wiring is covered with an insulating film having an opening that exposes the output wiring and the input wiring at each of the intersections.
The thin film transistor device, wherein the insulating film has a lower layer having lyophilicity with respect to the solution of the conductive material and a liquid repellent upper insulating film or a liquid repellent self-assembled monolayer . The thin film transistor device according to claim 1,
A semiconductor device constituting the thin film transistor is an organic semiconductor, an oxide semiconductor, or a Si semiconductor. The thin film transistor device according to claim 1,
The thin film transistor device is provided on a plastic film, paper, a thin film metal substrate, or a thin film glass substrate. The thin film transistor device according to claim 1,
2. The thin film transistor device according to claim 1, wherein the matrix wiring is connected to a diode for preventing breakdown due to static electricity. The thin film transistor device according to claim 3.
The thin film transistor device comprises:
A plurality of the output wirings are formed by selectively forming connection wirings at the plurality of intersections using a conductive material on the exposed input wirings and the output wirings after peeling the protective film at a use site. And a plurality of the input wirings are selectively connected to each other. The thin film transistor device according to claim 1,
The thin film transistor has a top gate structure. The thin film transistor device according to claim 1,
The thin film transistor has a bottom gate structure. Electrical connection between a plurality of integrated circuit block parts constituted by thin film transistors, a matrix wiring crossing the mesh circuit connecting the integrated circuit block parts arranged orthogonal to each other, and wirings orthogonal to each other at each of the intersecting parts. A method of manufacturing a thin film transistor device comprising a first insulating film that is isolated in a process,
Forming a plurality of first wirings constituting the matrix wiring on a substrate;
Forming the first insulating film on the first wiring;
Forming the matrix wiring on the first insulating film and forming a second wiring orthogonal to the first wiring;
Removing the first insulating film in the vicinity of the intersection and exposing the first wiring;
In the vicinity of the intersection, a protective film is applied to the substrate with the first wiring and the second wiring exposed, or a protective material is applied to the substrate and dried to form a protective film And a process for manufacturing the thin film transistor device. In the manufacturing method of the thin-film transistor device according to claim 13,
After the step of forming the second wiring,
Forming a second insulating film on the substrate having the first insulating film and the second wiring;
And a step of forming an opening in the vicinity of the intersecting portion of the second insulating film to expose the second wiring. In the manufacturing method of the thin-film transistor device according to claim 13 or 14,
The uppermost layer of the insulating film in the vicinity of the intersection where the protective film is provided is a liquid repellent third insulating film or a liquid repellent self-assembled monolayer, and the first insulating film, the second insulating film A method of manufacturing a thin film transistor device, wherein the insulating film is lyophilic. In the manufacturing method of the thin-film transistor device according to claim 13,
The thin film transistor device comprises:
A plurality of the output wirings are formed by selectively forming connection wirings at the plurality of intersections using a conductive material on the exposed input wirings and the output wirings after peeling the protective film at a use site. And a method of manufacturing a thin film transistor device, wherein the plurality of input wirings are selectively connected.

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