JP2010252051A5 - Electronic device and manufacturing method thereof - Google Patents

Electronic device and manufacturing method thereof Download PDF

Info

Publication number
JP2010252051A5
JP2010252051A5 JP2009099389A JP2009099389A JP2010252051A5 JP 2010252051 A5 JP2010252051 A5 JP 2010252051A5 JP 2009099389 A JP2009099389 A JP 2009099389A JP 2009099389 A JP2009099389 A JP 2009099389A JP 2010252051 A5 JP2010252051 A5 JP 2010252051A5
Authority
JP
Japan
Prior art keywords
electrode
electronic device
element layer
recess
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009099389A
Other languages
Japanese (ja)
Other versions
JP5262946B2 (en
JP2010252051A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2009099389A priority Critical patent/JP5262946B2/en
Priority claimed from JP2009099389A external-priority patent/JP5262946B2/en
Publication of JP2010252051A publication Critical patent/JP2010252051A/en
Publication of JP2010252051A5 publication Critical patent/JP2010252051A5/en
Application granted granted Critical
Publication of JP5262946B2 publication Critical patent/JP5262946B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Description

本発明は、特に半田リフローによる外部応力やヒートサイクル等の熱衝撃に対して高い信頼性を有すると共に、中間層の端子電極保持部材の外部端子との貫通電極を介しての電気的接続において接続信頼性を向上させる電子デバイス及びその製造方法に関する。 In particular, the present invention has high reliability against thermal shock such as external stress and heat cycle caused by solder reflow, and in electrical connection via a through electrode between the terminal electrode of the intermediate layer and the external terminal of the holding member. The present invention relates to an electronic device that improves connection reliability and a method for manufacturing the same.

そこで本発明は、上記従来技術の問題点に鑑み成されたものであり、半田リフローによる外部応力やヒートサイクル等の熱衝撃に対して高い信頼性を有すると共に、中間層の端子電極と保持部材の外部端子とを貫通電極を介しての電気的接続において接続信頼性を向上させた電子デバイス及びその製造方法を提供することを目的としている。 Accordingly, the present invention has been made in view of the above-described problems of the prior art, and has high reliability against external stress caused by solder reflow, thermal shock such as heat cycle, and the like, and terminal electrodes and holding members of the intermediate layer It is an object of the present invention to provide an electronic device having improved connection reliability in electrical connection between the external terminal and a through electrode, and a method for manufacturing the same.

本発明は、上記の課題の少なくとも一部を解決するためになされたものであり、以下の形態又は適用例として実現することが可能である。
〔適用例1〕接続電極を備えている電子素子層と、外部電極を備えており、かつ前記接続電極に重なった状態で前記電子素子層の接合面と金属ロウ材を介して固定している被接合部材と、を備え、前記電子素子層は、前記接続電極に前記被接合部材側の面に凹部を有し、前記被接合部材は、前記接続電極と重なっている位置に前記凹部に嵌合し、かつ前記外部電極と前記接続電極と電気的に接続している電極を備えていることを特徴とする電子デバイス。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
Application Example 1 An electronic element layer provided with a connection electrode , an external electrode , and a bonding surface of the electronic element layer and a metal brazing material are fixed in a state of overlapping with the connection electrode. comprising a bonded member, wherein the electronic element layer has a recess on a surface of the bonded member side to the connection electrode, wherein the workpieces are fitted into the recess at a position overlapping with the connecting electrode electronic device engaged, and characterized in that it comprises an electrode that electrically connects the connection electrode and the external electrode.

これによれば、電子素子層と被接合部材の接合の際、凹部と電極の先端が嵌め合うことにより、接続電極と外部電極を電気的に接続させることができるため、半田リフローによる外部応力やヒートサイクル等の熱衝撃に対して高い信頼性を有し、電気的接続の信頼性を向上させることができる。 According to this, when the bonding of the electronic element layer and the workpieces, by mating the tip of the recess and the electrodes, since the connection electrodes and the external electrodes can be electrically connected, Ya external stress by solder reflow It has high reliability against thermal shock such as heat cycle, and can improve the reliability of electrical connection.

〔適用例2〕前記凹部に嵌合している前記電極は、金属ボールを溶融して形成したことを特徴とする適用例1に記載の電子デバイス。
これによれば、金属ボールを封止孔に落とし込んだときに封止孔の底面に位置する凹部で金属ボールを固定することができる。従って、封止孔の内部で金属ボールが転がることがなく、レーザー照射による金属ボールの照射位置決めを容易に行なうことができる。
Application Example 2 The electronic device according to Application Example 1, wherein the electrode fitted in the recess is formed by melting a metal ball.
According to this, when the metal ball is dropped into the sealing hole, the metal ball can be fixed by the recess located on the bottom surface of the sealing hole. Therefore, the metal ball does not roll inside the sealing hole, and the irradiation positioning of the metal ball by laser irradiation can be easily performed.

〔適用例3〕前記凹部に嵌合している前記電極は、前記凹部と対向する前記被接合部材を貫通し、前記凹部側に突出した凸状の電極であることを特徴とする適用例1に記載の電子デバイス。
電子素子層と被接合部材の接合の際、凹部に電極の先端が嵌め合うことにより、接続電極と外部電極を電気的に接続させることができる。これにより電気的接続の信頼性を向上させることができる。
Application Example 3] The electrode that is fitted in the recess, through the bonded members facing the recess, Application Example 1, which is a convex electrode that protrudes into the concave side The electronic device according to.
When the electronic element layer and the member to be bonded are bonded, the connection electrode and the external electrode can be electrically connected by fitting the tip of the electrode into the recess. Thereby, the reliability of electrical connection can be improved.

〔適用例4〕前記被接合部材は、前記接続電極と重なっている位置に前記外部電極と電気的に接続している配線パターンを有し、前記凹部に嵌合している前記電極は、前記配線パターン上に配置されているバンプであることを特徴とする適用例1に記載の電子デバイス。
電子素子層と被接合部材の接合の際、凹部にバンプの先端が嵌め合うことにより、接続電極と外部電極を電気的に接続させることができる。またバンプと凹部の嵌め合いの際に、電極が被接合部材から脱落することを防止できる。
Application Example 4 The member to be joined has a wiring pattern electrically connected to the external electrode at a position overlapping the connection electrode, and the electrode fitted in the recess is electronic device according to application example 1, which is a bump disposed on Sharing, ABS line pattern.
When the electronic element layer and the member to be bonded are bonded, the connection electrode and the external electrode can be electrically connected by fitting the tip of the bump into the recess. Further, it is possible to prevent the electrode from falling off from the bonded member when the bump and the recess are fitted.

〔適用例5〕前記凹部に嵌合している前記電極は、前記電子素子層との前記接合面から前記被接合部材の裏面に向けてテーパ状であることを特徴とする適用例1乃至4の何れか1項に記載の電子デバイス。
これによれば、電極と凹部の嵌め合いの際に、電極が被接合部材から脱落することを防止できる。
Application Example 5] The electrode that is fitted in the recess, applications wherein the a Te over path shape toward the rear surface of the members to be bonded from the bonding surface of the electronic element layer The electronic device according to any one of 1 to 4.
According to this, it is possible to prevent the electrode from dropping from the member to be joined when the electrode and the recess are fitted.

〔適用例6〕前記凹部は、開口から底面に向けて径小であるテーパ状であることを特徴とする適用例3乃至5の何れか1項に記載の電子デバイス。
これによれば、凹部と電極の接触面積を広くすることができるため、電気抵抗率が低下する。従ってCI値の向上を図ることができる。
Application Example 6 The electronic device according to any one of Application Examples 3 to 5, wherein the concave portion has a tapered shape with a diameter decreasing from the opening toward the bottom surface.
According to this, since the contact area between the recess and the electrode can be increased, the electrical resistivity is lowered. Therefore, the CI value can be improved.

〔適用例7〕凹部を有している接続電極を備えている電子素子層と、外部電極を備えており、前記電子素子層の接合面と接合している被接合部材と、備えている電子デバイスの製造方法であって、前記被接合材の接合面側に突出した電極を形成し、前記電子素子層の前記凹部と、前記突出した電極を嵌め合わせて、前記電子素子層と前記被接合部材が積層体を形成する工程を有することを特徴とする電子デバイスの製造方法。 Application Example 7 An electronic element layer including a connection electrode having a recess, and an external electrode and a member to be bonded that is bonded to a bonding surface of the electronic element layer . a method of manufacturing an electronic device, wherein the forming the electrode protruding to the bonding surface side of the material to be joined, the said recess of the electronic element layer, by fitting the electrodes the projecting, the said electronic device layer to be A method for manufacturing an electronic device, wherein the bonding member includes a step of forming a laminate.

これによれば、電子素子層と被接合部材の接合の際、凹部に電極の先端が嵌め合うことにより、接続電極と外部電極を電気的に接続させることができるため、電気的接続の信頼性を向上させた電子デバイスを製造することができる。 According to this, when the electronic element layer and the member to be joined are joined, the connection electrode and the external electrode can be electrically connected by fitting the tip of the electrode into the recess, so that the reliability of electrical connection It is possible to manufacture an electronic device with improved resistance.

本発明に係る電子デバイスの一実施例である実施例1の圧電振動子を第1基板の斜め上方から見た分解斜視図である。It is the disassembled perspective view which looked at the piezoelectric vibrator of Example 1 which is one example of the electronic device concerning the present invention from the slanting upper part of the 1st substrate. 本発明に係る電子デバイスの一実施例である実施例1の圧電振動子の第2基板の斜め下方から見た分解斜視図である。It is the disassembled perspective view seen from the slanting lower part of the 2nd board | substrate of the piezoelectric vibrator of Example 1 which is one Example of the electronic device which concerns on this invention. 実施例1の圧電振動子の断面図である。2 is a cross-sectional view of the piezoelectric vibrator of Example 1. FIG. 第1基板の製造工程図である。It is a manufacturing-process figure of a 1st board | substrate. 第2基板の製造工程図である。It is a manufacturing-process figure of a 2nd board | substrate. 振動体基板の製造工程図である。It is a manufacturing process figure of a vibrating body board. 実施例1の圧電振動子の貫通電極の製造工程図である。6 is a manufacturing process diagram of a through electrode of the piezoelectric vibrator of Example 1. FIG. 実施例2の圧電振動子の断面図である。6 is a cross-sectional view of a piezoelectric vibrator of Example 2. FIG. 実施例2の第2基板の製造工程図である。6 is a manufacturing process diagram of a second substrate of Example 2. FIG. 貫通電極と凹部の接合工程の部分拡大図である。It is the elements on larger scale of the joining process of a penetration electrode and a recessed part. 実施例3の圧電振動子の断面図である。6 is a cross-sectional view of a piezoelectric vibrator of Example 3. FIG. 実施例3の第2基板の製造工程図である。FIG. 12 is a manufacturing process diagram for the second substrate of Example 3. 従来の圧電発振子の説明図である。It is explanatory drawing of the conventional piezoelectric oscillator. 従来の薄型水晶振動子の説明図である。It is explanatory drawing of the conventional thin crystal oscillator. 従来の水晶振動子の説明図である。It is explanatory drawing of the conventional crystal oscillator.

本発明の電子デバイス及びその製造方法の実施形態を添付の図面を参照しながら、以下詳細に説明する。
図1は本発明に係る電子デバイスの一実施例である実施例1の圧電振動子を第1基板の斜め上方から見た分解斜視図である。図2は前記圧電振動子の第2基板の斜め下方から見た分解斜視図である。図3は実施例1の圧電振動子の断面図である。なお図1〜3はいずれも貫通電極を除いた圧電振動子を示している。
Embodiments of an electronic device and a manufacturing method thereof according to the present invention will be described below in detail with reference to the accompanying drawings.
FIG. 1 is an exploded perspective view of a piezoelectric vibrator according to a first embodiment, which is an embodiment of an electronic device according to the present invention, viewed obliquely from above a first substrate. FIG. 2 is an exploded perspective view of the piezoelectric vibrator as viewed from obliquely below the second substrate. FIG. 3 is a cross-sectional view of the piezoelectric vibrator of the first embodiment. 1 to 3 all show a piezoelectric vibrator excluding a through electrode.

Claims (7)

接続電極を備えている電子素子層と、
外部電極を備えており、かつ前記接続電極に重なった状態で前記電子素子層の接合面と金属ロウ材を介して固定している被接合部材と、を備え、
前記電子素子層は、前記接続電極に前記被接合部材側の面に凹部を有し
前記被接合部材は、前記接続電極と重なっている位置に前記凹部に嵌合し、かつ前記外部電極と前記接続電極と電気的に接続している電極を備えていることを特徴とする電子デバイス。
An electronic element layer comprising a connection electrode ;
An external electrode , and a member to be bonded that is fixed via a metal brazing material and a bonding surface of the electronic element layer in a state of overlapping with the connection electrode ,
The electronic element layer has a recess on a surface of the bonded member side to the connecting electrode,
The members to be joined is an electronic, characterized in that it comprises an electrode that is electrically connected to the fitted to the recessed portion at a position overlapping with the connection electrode and said outer electrode and the connection electrode device.
前記凹部に嵌合している前記電極は、金属ボールを溶融して形成したことを特徴とする請求項1に記載の電子デバイス。 The electronic device according to claim 1, wherein the electrode fitted in the recess is formed by melting a metal ball. 前記凹部に嵌合している前記電極は、前記凹部と対向する前記被接合部材を貫通し、前記凹部側に突出した凸状の電極であることを特徴とする請求項1に記載の電子デバイス。 2. The electronic device according to claim 1, wherein the electrode fitted in the concave portion is a convex electrode that penetrates the member to be joined facing the concave portion and protrudes toward the concave portion. . 前記被接合部材は、前記接続電極と重なっている位置に前記外部電極と電気的に接続している配線パターンを有し、
前記凹部に嵌合している前記電極は、前記配線パターン上に配置されているバンプであることを特徴とする請求項1に記載の電子デバイス。
The member to be joined has a wiring pattern electrically connected to the external electrode at a position overlapping the connection electrode,
The electronic device according to claim 1, wherein the electrodes are fitted into the recess is a bump that is disposed in front Sharing, ABS line pattern.
前記凹部に嵌合している前記電極は、前記電子素子層との前記接合面から前記被接合部材の裏面に向けてテーパ状であることを特徴とする請求項1乃至4の何れか1項に記載の電子デバイス。 The electrodes fitted in the recess, one of claims 1 to 4, characterized in that said a tape over path shape toward the rear surface of the members to be bonded from the bonding surface of the electronic element layer The electronic device according to claim 1. 前記凹部は、開口から底面に向けて径小であるテーパ状であることを特徴とする請求項3乃至5の何れか1項に記載の電子デバイス。 The electronic device according to claim 3, wherein the concave portion has a tapered shape having a diameter that decreases from the opening toward the bottom surface. 凹部を有している接続電極を備えている電子素子層と、外部電極を備えており、前記電子素子層の接合面と接合している被接合部材と、備えている電子デバイスの製造方法であって、
前記被接合材の接合面側に突出した電極を形成し、
前記電子素子層の前記凹部と、前記突出した電極を嵌め合わせて、前記電子素子層と前記被接合部材が積層体を形成する工程を有することを特徴とする電子デバイスの製造方法。
A method of manufacturing an electronic device , comprising: an electronic element layer including a connection electrode having a recess; and a member to be bonded that includes an external electrode and is bonded to a bonding surface of the electronic element layer. Because
Forming an electrode protruding on the joining surface side of the material to be joined;
Wherein said recess electronic element layer, by fitting the electrodes the projecting, a method for fabricating an electronic device in which the bonded members and the electronic element layer is characterized by having a step of forming a laminate.
JP2009099389A 2009-04-15 2009-04-15 Electronic devices Expired - Fee Related JP5262946B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009099389A JP5262946B2 (en) 2009-04-15 2009-04-15 Electronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009099389A JP5262946B2 (en) 2009-04-15 2009-04-15 Electronic devices

Publications (3)

Publication Number Publication Date
JP2010252051A JP2010252051A (en) 2010-11-04
JP2010252051A5 true JP2010252051A5 (en) 2012-05-31
JP5262946B2 JP5262946B2 (en) 2013-08-14

Family

ID=43313886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009099389A Expired - Fee Related JP5262946B2 (en) 2009-04-15 2009-04-15 Electronic devices

Country Status (1)

Country Link
JP (1) JP5262946B2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5001393B2 (en) 2009-09-16 2012-08-15 日本電波工業株式会社 Piezoelectric vibration device and method for manufacturing piezoelectric vibration device
JP5839024B2 (en) * 2013-12-20 2016-01-06 株式会社大真空 Piezoelectric vibration device
WO2015093300A1 (en) * 2013-12-20 2015-06-25 株式会社大真空 Piezoelectric oscillation device
JP6481813B2 (en) * 2015-02-17 2019-03-13 セイコーエプソン株式会社 Vibrator, vibrating device, oscillator, electronic device, and moving object
WO2016132765A1 (en) * 2015-02-18 2016-08-25 株式会社村田製作所 Piezoelectric vibration device and production method therefor
JP6052651B1 (en) 2015-03-03 2016-12-27 株式会社村田製作所 Crystal oscillator
WO2016158010A1 (en) 2015-03-27 2016-10-06 株式会社大真空 Piezoelectric vibration device
WO2016199645A1 (en) 2015-06-12 2016-12-15 株式会社大真空 Piezoelectric vibration device
CN108352820B (en) 2015-11-06 2021-12-07 株式会社大真空 Piezoelectric vibration device
JP6358293B2 (en) * 2016-07-27 2018-07-18 株式会社大真空 Method for manufacturing piezoelectric vibration device
WO2018003315A1 (en) * 2016-06-29 2018-01-04 株式会社大真空 Piezoelectric oscillating device, and method of manufacturing piezoelectric oscillating device
US11152911B2 (en) 2016-09-16 2021-10-19 Daishinku Corporation Piezoelectric resonator device
CN109937533B (en) 2016-11-16 2023-06-23 株式会社大真空 Crystal vibration device
JP6795039B2 (en) 2016-11-17 2020-12-02 株式会社大真空 Piezoelectric vibration device
US11637544B2 (en) 2016-11-24 2023-04-25 Daishinku Corporation Piezoelectric resonator device and system-in-package module including the same
JP6979670B2 (en) * 2017-02-17 2021-12-15 リバーエレテック株式会社 Wafer level package manufacturing method
JP6931912B2 (en) * 2017-02-17 2021-09-08 リバーエレテック株式会社 Wafer level package manufacturing method
CN111727563B (en) 2018-03-13 2024-02-06 株式会社大真空 Piezoelectric vibration device
JP6848953B2 (en) 2018-11-26 2021-03-24 株式会社大真空 Piezoelectric vibration device
JP7196934B2 (en) 2018-12-14 2022-12-27 株式会社大真空 piezoelectric vibration device
JP7305971B2 (en) * 2019-01-31 2023-07-11 株式会社大真空 piezoelectric vibration device
JP2020141358A (en) * 2019-03-01 2020-09-03 株式会社大真空 Piezoelectric diaphragm and piezoelectric vibration device
US20240039505A1 (en) 2020-12-16 2024-02-01 Daishinku Corporation Piezoelectric resonator device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606338U (en) * 1983-06-24 1985-01-17 キンセキ株式会社 Crystal oscillator
JP2004096721A (en) * 2002-07-10 2004-03-25 Seiko Epson Corp Package for piezoelectric vibrator, piezoelectric vibrator and piezoelectric device
JP2004208236A (en) * 2002-12-26 2004-07-22 Seiko Epson Corp Piezoelectric device, manufacturing method therefor, portable telephone unit utilizing piezoelectric device and electronic equipment utilizing piezoelectric device
JP4978030B2 (en) * 2006-03-07 2012-07-18 セイコーエプソン株式会社 Piezoelectric device
JP2008166884A (en) * 2006-12-27 2008-07-17 Daishinku Corp Manufacturing method of piezoelectric vibration device and piezoelectric vibration device by the manufacturing method
JP4412506B2 (en) * 2007-09-07 2010-02-10 エプソントヨコム株式会社 Piezoelectric device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JP2010252051A5 (en) Electronic device and manufacturing method thereof
JP6303341B2 (en) Coil parts
JP6721346B2 (en) Semiconductor device
JP2012508461A (en) Multi-layered piezoelectric actuator and method of fixing external electrodes in piezoelectric actuator
JP4920754B2 (en) Wiring board with lead pins
JP2009283628A (en) Method for mounting semiconductor element
JP2009071209A (en) Optical semiconductor device, method of manufacturing the same, and metal cap
JP5036397B2 (en) Manufacturing method of chip embedded substrate
US8830127B2 (en) Patch antenna and method of mounting the same
JP2008177112A (en) Lead terminal connecting method, and printed circuit board
JP2009077341A5 (en)
JP5350962B2 (en) Electronic component, board unit and information processing apparatus
JP2007281292A (en) Semiconductor device mounting structure
TWI595822B (en) Housing and method for making the same and shell
JP6348759B2 (en) Semiconductor module, joining jig, and manufacturing method of semiconductor module
JP2008091692A (en) Manufacturing method for semiconductor circuit module
JP2005244116A (en) Manufacturing method for semiconductor device
JP6334192B2 (en) Piezoelectric device and mounting structure thereof
JP2014086963A (en) Package and method of manufacturing package
JP5804762B2 (en) Piezoelectric device
TWI708478B (en) Surface mount type device and manufacturing method for the same
JP2018152468A (en) Semiconductor device and semiconductor device manufacturing method
JP2008034830A (en) Semiconductor device, and lead frame and its manufacturing method
JP2006140178A5 (en)
JPWO2021019867A5 (en)