JP2010251566A - Wiring board, semiconductor device, semiconductor module, and method of manufacturing the module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board capable of narrow pitch wiring and with high reliability in bonding, to provide a semiconductor device, and to provide a semiconductor module and a method of manufacturing the module. <P>SOLUTION: The wiring board 100 having a semiconductor element mounted on a principal plane includes: an insulative substrate 2; a wire 3 provided on a principal plane of the insulative substrate 2 as a routing wire from the semiconductor element to be mounted; external connecting terminals 4 and 6 formed on a partial region of the wire 3 as external connecting terminals connecting with the outside; and insulative resin 7 formed to cover the principal plane of the insulative substrate 2 while at least a mounting region where the semiconductor element is to be mounted on the principal plane of the insulative substrate 2 and connection surfaces of the external connection terminals 4 and 6 are exposed. The thickness of the external connection terminals 4 and 6 in a normal direction on the principal plane of the insulative substrate 2 is larger than that in a normal direction on the principal plane of the insulative substrate 2 on the wire 3. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a wiring board, a semiconductor device and a semiconductor module using the wiring board, and a manufacturing method thereof.

  In recent years, the number of I / O (Input / Output) pins of a semiconductor element has been increasing as the functionality of the semiconductor element has increased. In a semiconductor device corresponding to such a multi-pin semiconductor element, a BGA (Ball Grid Array) having an external connection terminal on the back surface of the semiconductor device is often used as a package system.

  Such a semiconductor device includes a wiring board on which wiring is formed, and a part for joining a semiconductor element and a terminal for external connection are formed on the wiring board. Here, a glass epoxy type or tape type substrate is generally used as the wiring substrate. Further, as a wiring formed on the wiring board, a copper wiring is generally low in resistance value. The external connection terminal is formed on the back surface of the semiconductor device in the BGA. Further, in such a semiconductor device, for example, the semiconductor element is connected to the back surface of the wiring board via metal bumps by a mounting method such as FCB (Flip Chip Bonding) that eliminates the lead and mounts the bare chip itself on the wiring board. It is joined to the external connection terminal formed on the wiring board and connected to the wiring board.

  Further, in a semiconductor device corresponding to a multi-pin semiconductor element, a semiconductor in which a plurality of semiconductor devices of another BGA are mounted on a package in which a plurality of semiconductor devices called POP (Package on Package) are stacked, that is, a BGA semiconductor device. Modules are used in products that require small area multifunctional devices. In POP, for example, as a method of joining an external connection terminal on a wiring board included in a semiconductor device, an external connection terminal of another semiconductor device, a semiconductor element and a wiring board, and wiring boards, solder joining using solder is generally used. Used for.

  An example of a form in which solder bonding is used as a method of bonding a wiring board and another wiring board is disclosed in Patent Document 1 below. The wiring board described in Patent Document 1 will be described with reference to FIG.

  FIG. 9 is a cross-sectional view showing a joint portion to be connected to a solder bump in a conventional wiring board.

  A conventional wiring substrate 900 shown in FIG. 9 includes an insulating base 902, wiring 903, a resin layer 907, a metal layer 921, and solder bumps 922.

  In the wiring substrate 900, external connection terminals are formed on the wiring 903, and solder bumps 922 are formed on the external connection terminals. A glass epoxy or polyimide tape is used for the insulating base material 902 of the base member, and copper or the like is used for the wiring 903. Further, it is preferable to use a nickel material for the metal layer 21.

  As shown in FIG. 9, in the wiring substrate 900, external connection terminals are formed so as to expose a part of the insulating resin layer 907 on the wiring 903. A metal layer 921 is also formed on the side surface of the insulating resin layer 907 in order to prevent the influence of the solder on the wiring and to ensure strength, and a solder bump 922 is formed thereon. Thereby, the solder bump 922 and the wiring 903 can be firmly connected, that is, the strength of the solder joint can be improved.

JP 2004-327628 A

  However, in the above conventional wiring board 900, a sputtering apparatus or a complicated device is used to form the metal layer 921 on both the wiring 903 and the resin layer 907, which are external connection terminals, for the purpose of improving the strength of the solder joint. The electroless plating method must be used, and the process becomes complicated.

  Further, in the conventional wiring substrate 900, when the metal layer 921 is not formed, the following problems are concerned. It is predicted that the pads of the semiconductor chip mounted on the wiring board 900 will be reduced in size and the pad pitch will be reduced. In order to cope with this, it is necessary to reduce the pitch of the wiring 903 of the wiring substrate 900, and the wiring is generally formed by an etching method or the like. Therefore, in order to cope with a narrow pitch using the etching method, the thickness of the copper foil to be the wiring 903 must be reduced. However, although it is possible to cope with a narrow pitch by thinning the copper foil, the wiring 903 of the portion serving as an external connection terminal to be soldered is also thinned by thinning the copper foil. Therefore, in the conventional wiring board 900, when the metal layer 921 is not formed, the conductor of the wiring 903 and the solder are mutually diffused by heating at the time of solder mounting, and the wiring 903 is eroded by the solder. There is a concern that the wiring 903 may be disconnected due to solder erosion.

  Accordingly, the present invention has been made in view of the above-described circumstances, and an object thereof is to provide a wiring board, a semiconductor device, a semiconductor module, and a manufacturing method thereof that enable narrow pitch wiring and have high bonding reliability. And

  In order to achieve the above object, a wiring board according to the present invention is a wiring board on which a semiconductor element is mounted on a main surface, as an insulating base material, and a routing wiring from the semiconductor element to be mounted, Wirings provided on the main surface of the insulating base, external connection terminals connected to the outside, external connection terminal portions formed in a partial region of the wiring, and at least on the main surface of the insulating base An insulating resin formed so as to cover a main surface of the insulating base material in a state where a mounting region in which the semiconductor element is to be mounted and a connection surface of the external connection terminal portion are exposed; and the insulating property The thickness of the external connection terminal portion in the normal direction of the main surface of the base material is greater than the thickness of the main surface of the insulating base material in the wiring in the normal direction.

  With this configuration, it is possible to realize a wiring board with a narrow pitch wiring and high bonding reliability.

  Further, the thickness of the external connection terminal portion is thinner than the thickness in the normal direction of the main surface of the insulating base material in the insulating resin, and the outer periphery of the connection surface of the external connection terminal portion is the insulating material. May be covered with a conductive resin.

  Further, the external connection terminal portion is formed so that the connection surface protrudes from the upper surface of the insulating resin, and the insulating resin is in close contact with a part of the side surface of the external connection terminal portion. It may be formed.

  In order to achieve the above object, a semiconductor device according to the present invention is a wiring board on which a semiconductor element is mounted on a main surface, an insulating base material, and a routing wiring from the semiconductor element to be mounted As the wiring provided on the main surface of the insulating base, the external connection terminal portion formed in a partial region of the wiring as an external connection terminal to be connected to the outside, and at least the main of the insulating base An insulating resin formed so as to cover a main surface of the insulating base material in a state where a mounting area on which the semiconductor element is to be mounted and a connection surface of the external connection terminal portion are exposed, The thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base material is larger than the thickness of the main surface of the insulating base material in the normal direction of the main surface of the wiring, and the wiring board Semiconductor element mounted in the mounting area Equipped with a.

  With this configuration, it is possible to realize a semiconductor device that enables narrow pitch wiring and has high bonding reliability.

  Further, the thickness of the external connection terminal portion is thinner than the thickness of the insulating resin in the normal direction of the main surface of the insulating base, and the outer periphery of the connection surface of the external connection terminal portion is the It may be covered with an insulating resin.

  Further, the external connection terminal portion is formed so that the connection surface protrudes from the upper surface of the insulating resin, and the insulating resin is in close contact with a part of the side surface of the external connection terminal portion. It may be formed.

  In order to achieve the above object, a semiconductor module according to the present invention is a wiring board on which a semiconductor element is mounted on a main surface, an insulating base material, and a routing wiring from the semiconductor element to be mounted As the wiring provided on the main surface of the insulating base, the external connection terminal portion formed in a partial region of the wiring as an external connection terminal to be connected to the outside, and at least the main of the insulating base An insulating resin formed so as to cover a main surface of the insulating base material in a state where a mounting area on which the semiconductor element is to be mounted and a connection surface of the external connection terminal portion are exposed, The thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base material is larger than the thickness of the main surface of the insulating base material in the normal direction of the main surface of the wiring, and the wiring board Semiconductor mounted in the mounting area First and second semiconductor devices each including an element, wherein the second semiconductor device is stacked on the first semiconductor device, and the first semiconductor device is the first semiconductor device. The external connection terminal portion of the device is joined to the second semiconductor device by soldering.

  With this configuration, it is possible to realize a semiconductor module that enables narrow pitch wiring and has high bonding reliability.

  In the first and second semiconductor devices, the thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base is the thickness in the normal direction of the main surface of the insulating base. It is thinner than the insulating resin, and the outer periphery of the connection surface of the external connection terminal portion may be covered with the insulating resin.

  Further, the semiconductor module according to the present invention is a wiring board on which a semiconductor element is mounted on a main surface, and an insulating base material, and as a routing wiring from the semiconductor element to be mounted, the insulating base material Wirings provided on the main surface, external connection terminals connected to the outside, external connection terminal portions formed in a partial region of the wiring, and at least the semiconductor element on the main surface of the insulating substrate are mounted An insulating resin formed so as to cover the main surface of the insulating base material in a state where the mounting area to be connected and the connection surface of the external connection terminal portion are exposed, and the main surface of the insulating base material The thickness of the external connection terminal portion in the normal direction is larger than the thickness in the normal direction of the main surface of the insulating base in the wiring, and the semiconductor mounted in the mounting region of the wiring substrate It may be equipped with an element

  In order to achieve the above object, a method for manufacturing a wiring board according to the present invention is a method for manufacturing a wiring board in which a semiconductor element is mounted on a main surface, and is a routing wiring from the semiconductor element to be mounted. As a first step of providing a wiring made of a conductor on the main surface of the insulating substrate, a second step of forming an external connection terminal portion in a partial region of the wiring as an external connection terminal to be connected to the outside, at least Insulating resin is applied so as to cover the main surface of the insulating base material in a state in which the mounting area on which the semiconductor element is to be mounted on the main surface of the insulating base material and the connection surface of the external connection terminal portion are exposed. A third step of forming, and in the second step, the thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base material is defined as the normal line of the main surface of the insulating base material. Thicker than the wiring thickness in the direction To.

  In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a first step of providing a wiring made of a conductor on a main surface of an insulating base material as a routing wiring from a semiconductor element to be mounted. A second step of forming an external connection terminal portion in a partial region of the wiring as an external connection terminal to be connected to the outside, and a mounting region in which the semiconductor element is to be mounted at least on the main surface of the insulating substrate And a third step of forming an insulating resin so as to cover the main surface of the insulating base material in a state where the connection surface of the external connection terminal portion is exposed, and in the second step, the insulating property By forming the thickness of the external connection terminal portion in the normal direction of the main surface of the base material to be larger than the thickness of the wiring in the normal direction of the main surface of the insulating base material, the semiconductor element is formed on the main surface. The wiring board to be mounted Includes forming wiring board manufacturing process, a semiconductor element mounting step of mounting the semiconductor device on the mounting region of the wiring board by using both the heating and ultrasound.

  In order to achieve the above object, a method for manufacturing a semiconductor module according to the present invention includes a first step of providing a wiring made of a conductor on a main surface of an insulating base material as a routing wiring from a semiconductor element to be mounted. And a second step of forming an external connection terminal portion in a partial region of the wiring as an external connection terminal to be connected to the outside, and a surface opposite to the main surface of the insulating base material in the second step A third step of forming a back surface external connection terminal portion different from the external connection terminal portion, and a connection between the external connection terminal portion and the mounting region where the semiconductor element is to be mounted on at least the main surface of the insulating base A fourth step of forming an insulating resin so as to cover the main surface of the insulating base material with the surface exposed, and a fifth step of mounting the semiconductor element in the mounting region, In the process of By forming the thickness of the external connection terminal portion in the normal direction of the main surface of the conductive base material to be thicker than the thickness of the wiring in the normal direction of the main surface of the insulating base material, the first and second A semiconductor device manufacturing process for manufacturing the semiconductor device, and a stacking process for stacking the second semiconductor device on the first semiconductor device. In the stacking process, the first semiconductor device includes: The external connection terminal portion of the first semiconductor device is joined to the second semiconductor device by soldering.

  According to the present invention, it is possible to realize a wiring board, a semiconductor device, a semiconductor module, and a method for manufacturing the same that enable narrow pitch wiring and have high bonding reliability.

2 is a diagram showing a structure of a wiring board in the first embodiment. FIG. FIG. 3 is a cross-sectional view showing a structure of a semiconductor device when the wiring board in the first embodiment is used. 5 is a diagram for illustrating a method of manufacturing the wiring board in the first embodiment. FIG. It is sectional drawing which shows the structure of the semiconductor device at the time of using the wiring board in Embodiment 2. FIG. FIG. 6 is a cross-sectional view showing a structure of a semiconductor module in which two semiconductor devices in Embodiment 2 are joined. It is sectional drawing which shows the structure of another aspect of the semiconductor module which joined two semiconductor devices in Embodiment 2. FIG. FIG. 6 is a cross-sectional view showing a structure of a semiconductor module in which two semiconductor devices in Embodiment 3 are joined. FIG. 10 is a cross-sectional view showing a structure of a semiconductor device in a fourth embodiment. It is sectional drawing which shows the junction part connected by the solder bump in the conventional wiring board.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a diagram showing a structure of a wiring board in the first embodiment. FIG. 1A shows a cross-sectional view of the structure of the wiring board 100 in the first embodiment, and FIG. 1B shows a plan view thereof. Here, FIG. 1A shows a cross section of the wiring substrate 100 taken along the line AA ′ of FIG.

  A wiring substrate 100 shown in FIG. 1 has a bonding region 1 that is a region to which a semiconductor element is bonded, and includes an insulating substrate 2, a wiring 3 formed on the insulating substrate 2, and a first external connection terminal. 4, a protruding electrode 5 for bonding to a semiconductor element, a second external connection terminal 6, and an insulating resin 7.

  The insulating substrate 2 is a substrate made of a base material having insulating properties such as a glass epoxy type or a tape type. Moreover, the insulating substrate 2 has a through hole (through hole) used for conducting the main surface and the back surface in a subsequent process, for example.

  The wiring 3 is provided on the insulating substrate 2 as a lead wiring of a semiconductor element to be mounted on the wiring board 100 later, and is, for example, a conductor made of copper having a low resistance value. In addition, although copper is common as a material of the wiring 3, if it is a conductive material which has electroconductivity, it may be other than that. Moreover, as thickness of the wiring 3, 3-15 micrometers is preferable. As a method for forming the wiring 3, an etching method is generally used, but a semi-additive method may be used. The semi-additive method as a forming method for fine wiring is an expensive process.

  The first external connection terminal 4 is a connection terminal such as a pad for connecting to another wiring board, for example, and is formed in a partial region on the wiring 3 so as to be thicker than the wiring 3. The material of the first external connection terminal 4 is preferably the same copper as the material of the wiring 3, but any other material may be used as long as it is a conductive material. Further, the thickness of the first external connection terminal 4 is preferably thick, but may be about 1 to 10 μm.

  The protruding electrode 5 is an electrode formed on a part of the wiring 3 in the bonding region 1 as a bonding electrode for electrical connection with a semiconductor element to be mounted. The material of the protruding electrode 5 is preferably the same as the material of the first external connection terminal 4.

  The second external connection terminal 6 is a connection terminal for connecting to, for example, another wiring substrate or a semiconductor device, and is formed on the back surface of the insulating substrate 2. The second external connection terminal 6 is electrically connected to the wiring 3 through a through hole (through hole) formed in the insulating substrate 2. In addition, the thickness of the second external connection terminal 6 is preferably formed to be thicker than the thickness of the wiring 3.

  The insulating resin 7 is formed so as to cover a main surface of the insulating substrate 2 by exposing a part of the first external connection terminal 4 and a desired region such as the bonding region 1. The insulating resin 7 is formed thicker than the thickness of the first external connection terminal 4 so as to cover the outer periphery of the first external connection terminal 4. Thereby, there is an effect that a part of the first external connection terminal 4 which is a thick part can be pressed by the insulating resin 7, and a part of the first external connection terminal 4 which is a thick part. Since only this can be used as a joint portion, the effect of reducing the influence of solder diffusion during solder joining is achieved.

  The wiring board 100 is configured as described above.

  Here, a semiconductor device including the wiring substrate 100 will be described.

  FIG. 2 is a cross-sectional view showing the structure of the semiconductor device when the wiring board according to the first embodiment is used. Elements similar to those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  A semiconductor device 120 shown in FIG. 2 includes an insulating substrate 2, a wiring 3 formed on the insulating substrate 2, a first external connection terminal 4, a protruding electrode 5 for bonding the semiconductor element 8, A wiring board 100 having a second external connection terminal 6 and an insulating resin 7, a semiconductor element 8, a sealing resin 9, and a solder ball 10 are provided.

  The semiconductor element 8 is a CMOS semiconductor element, for example, and has a function such as an analog IC or a logic IC. The semiconductor element 8 is mounted on the bonding region 1 by bonding the protruding electrode 5 and the pad of the semiconductor element 8 using FCB.

  The sealing resin 9 is formed in the bonding region 1 and is formed on the semiconductor element 8, the protruding electrode 5 bonded to the semiconductor element 8, and the wiring 3 exposed from the insulating resin 7 as the bonding region 1.

  The solder ball 10 is joined to the second external connection terminal 6. The solder ball 10 is joined to the second external connection terminal 6 to facilitate mounting of the semiconductor device 120 on a mother board or other semiconductor device. Further, at this time, since the thickness of the first external connection terminal 4 and the second external connection terminal 6 is formed to be thicker than that of the wiring 3, the first external connection terminal 4 and the second external connection terminal are joined at the time of soldering. The connection terminal 6 can reduce the influence of the solder erosion of the wiring 3.

  The semiconductor device 120 is configured as described above.

  Next, a method for manufacturing the wiring board 100 will be described.

  FIG. 3 is a diagram for explaining a method of manufacturing the wiring board according to the first embodiment.

  First, in the insulating substrate 2 (FIG. 3A) having a through hole (through hole), the wiring 3 made of a conductor is formed on the main surface of the insulating substrate 2 which is an element bonding surface of the semiconductor device 120 ( FIG. 3 (b)). Here, the wiring 3 is preferably formed with a thickness of 3 to 15 μm. Further, in FIG. 3B, a plating layer is formed in the through hole (through hole) of the insulating substrate 2.

  Next, a plating layer is further formed by a method such as electrolytic plating or electroless plating at the position of the wiring 3 where the first external connection terminal 4 is to be formed so as to be thicker than the thickness of the wiring 3. 1 external connection terminals 4 are formed (FIG. 3C). In FIG. 3B, when the wiring 3 is formed, a thick metal layer is used, and etching is performed in two stages, whereby the first external connection terminal 4 and the wiring 3 that are thicker than the wiring 3 are formed. May be formed. Here, the first external connection terminal 4 is preferably made of the same copper as the material of the wiring 3, but other conductive materials may be used. Although the thickness of the first external connection terminal 4 is preferably thick, the thickness further formed on the wiring 3 may be about 1 to 10 μm.

  Further, in FIG. 3C, a protruding electrode 5 is formed on a part of the wiring 3 in the bonding region 1 for bonding to the semiconductor element 8 by a method such as electrolytic plating or electroless plating. The second external connection terminal 6 is formed on the back surface. The material of the protruding electrode 5 is preferably the same as the material of the first external connection terminal 4. This is because the bump electrode 5 can be formed at the same time by using the same material as that of the first external connection terminal 4 and the process can be simplified.

  Next, an insulating resin 7 is formed so as to cover the main surface of the insulating substrate 2 but expose a part of the first external connection terminal 4 and a desired region such as the bonding region 1 (FIG. 3C). )). Accordingly, a part of the first external connection terminal 4 which is a thick part can be pressed by the insulating resin 7, and only a part of the first external connection terminal 4 which is a thick part is the semiconductor element 8. Therefore, it is possible to reduce the influence of solder diffusion during bonding.

  The wiring board 100 is manufactured as described above.

  Note that the semiconductor device 120 can be formed by mounting the semiconductor element 8 in the bonding region 1 of the wiring substrate 100 and forming the sealing resin 9.

  The semiconductor element 8 is bonded to the bump electrode 5 and the pad of the semiconductor element 8 using FCB. The sealing resin 9 may be formed before or after the semiconductor element 8 is bonded.

  Further, the solder balls 10 may be joined to the second external connection terminals 6 of the wiring board 100. This facilitates mounting on a mother board or other semiconductor device. In addition, since the first external connection terminal 4 and the second external connection terminal 6 are formed thicker than the wiring 3, the first external connection terminal 4 and the second external connection terminal 6 are formed at the time of soldering. Thus, the influence of the solder erosion of the wiring 3 can be reduced.

  According to the above method, it is possible to ensure stability, that is, high connection reliability, in the solder joint at the first external connection terminal 4 even when the narrow pitch wiring and the narrow pitch semiconductor element are joined.

  As a result, it is possible to realize a wiring board, a semiconductor device, a semiconductor module, and a manufacturing method thereof that enable narrow pitch wiring and have high bonding reliability.

(Embodiment 2)
In the first embodiment, a part of the first external connection terminal 4 is exposed, but is formed so as to be covered by the first external connection terminal 4 and thicker than the thickness of the first external connection terminal 4. Although the insulating resin 7 has been described, it is not limited thereto. The first external connection terminal may be formed to be thicker than the insulating resin 7. Such a case will be described in a second embodiment below.

  FIG. 4 is a cross-sectional view showing the structure of the semiconductor device when the wiring board according to the second embodiment is used. Elements similar to those in FIGS. 1 and 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  A semiconductor device 220 shown in FIG. 4 includes an insulating substrate 2, a wiring 3 formed on the insulating substrate 2, a first external connection terminal 14, a protruding electrode 5 for bonding to the semiconductor element 8, A wiring board 200 having a second external connection terminal 6 and an insulating resin 7, a semiconductor element 8, a sealing resin 9, and a solder ball 10 are provided.

  The semiconductor device 220 shown in FIG. 4 is different from the semiconductor device 120 according to the first embodiment in that the first external connection terminal 14 is thicker than the insulating resin 7.

  The first external connection terminal 14 is, for example, a connection terminal for connecting to another wiring board, and is formed on the wiring 3 so as to be thicker than the wiring 3. The first external connection terminal 14 is formed thicker than the insulating resin 7 and protrudes from the insulating resin 7. The material of the first external connection terminal 14 is preferably the same material as that of the wiring 3, but any other material may be used as long as it is a conductive material. Further, the thickness of the first external connection terminal 4 is preferably thick, but may be about 10 to 500 μm.

  The first external connection terminal 14 is formed, for example, by forming a plating layer on the portion of the wiring 3 to be the first external connection terminal 14 using a method such as electrolytic plating or electroless plating. A gold plating layer may be formed on the surface of the first external connection terminal 14. When forming the wiring 3, the first external connection terminal 14 and the wiring 3 having a thicker thickness than the wiring 3 may be formed by forming a thick metal layer and etching in two stages.

  The insulating resin 7 is formed so as to cover a main surface of the insulating substrate 2 by exposing a desired region such as a part of the first external connection terminal 14 and the bonding region 1. The insulating resin 7 is formed thinner than the first external connection terminal 14 and is formed so as to be in close contact with a part of the side surface of the external connection terminal portion.

  The insulating resin 7 is preferably formed after the wiring 3 and the first external connection terminal 14 are formed, but may be formed after the wiring 3 is formed. In that case, after the insulating resin 7 is formed, the first region thicker than the insulating resin 7 is thickened by plating or the like in the region of the wiring 3 where the exposed first external connection terminal 14 is to be formed. The external connection terminal 14 may be formed.

  As described above, the semiconductor device 220 including the wiring substrate 200 is configured.

  As described above, in the wiring board 200 and the semiconductor device 220 including the wiring board 200, when the narrow pitch wiring and the narrow pitch semiconductor element are joined, the first external connection terminal 14 is soldered with high stability, that is, high. Connection reliability can be ensured.

  As a result, it is possible to realize a wiring substrate, a semiconductor device and a manufacturing method thereof that enable narrow pitch wiring and have high bonding reliability.

  Next, as an example of a POP package using the semiconductor device 220, a semiconductor module in which a plurality of semiconductor devices are mounted will be described.

  FIG. 5 is a cross-sectional view showing a structure of a semiconductor module in which two semiconductor devices according to the second embodiment are joined. Elements similar to those in FIG. 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

  A semiconductor module 250 shown in FIG. 5 is formed by joining a semiconductor device 220 and a semiconductor device 221.

  The semiconductor device 221 is the same as the semiconductor device 220 and has similar components.

  The semiconductor device 221 is joined to the semiconductor device 220 by being joined to the solder ball 10 of the semiconductor device 220 via the first external connection terminal 14.

  Similarly, the semiconductor device 220 is joined to the first external connection terminal 14 of the semiconductor device 221 via the solder ball 12 joined to the second external connection terminal 6 of the semiconductor device 220. Be joined.

  The semiconductor module 250 is configured as described above.

  As described above, in the semiconductor module 250, the first external connection terminal 14 of the semiconductor device 220 and the second external connection terminal 6 of the semiconductor device 220 are joined via the solder ball 10. Then, the semiconductor device 220 and the semiconductor device 221 are joined by a solder joining method in which the solder balls 10 are joined by heating. At this time, the solder of the solder balls 10 in the semiconductor device 220 is diffused to the first external connection terminals 14 of the semiconductor device 221 by heating. However, since the first external connection terminal 14 of the semiconductor device 221 is thicker than the wiring 3 and is formed so as to protrude from the insulating resin 7, its solder joint is stable.

  FIG. 6 is a cross-sectional view showing a structure of another aspect of the semiconductor module in which two semiconductor devices according to the second embodiment are joined. Elements similar to those in FIGS. 4 and 5 are denoted by the same reference numerals, and detailed description thereof is omitted.

  A semiconductor module 260 shown in FIG. 6 is formed by joining a semiconductor device 230 and a semiconductor device 221.

  The semiconductor module 260 shown in FIG. 6 further has a third external connection terminal at a position on the back surface of the insulating substrate 2 corresponding to the semiconductor element 8 mounted on the semiconductor device 230 with respect to the semiconductor module 250 shown in FIG. 16 is formed, and the third external connection terminal 16 and the semiconductor element 8 mounted on the semiconductor device 221 are connected by the adhesive layer 15.

  In the semiconductor device 230, a third external connection terminal 16 is further formed at a position on the back surface of the insulating substrate 2 corresponding to the semiconductor element 8 mounted on the semiconductor device 230.

  The semiconductor device 230 is not only joined to the first external connection terminal 14 of the semiconductor device 221 via the solder ball 12 joined to its second external connection terminal 6, but also to the third external connection terminal. 16 and the semiconductor element 8 mounted on the semiconductor device 221 are connected by the adhesive layer 15, so that the semiconductor device 221 is joined.

  The third external connection terminal 16 is formed at a position on the back surface of the insulating substrate 2 corresponding to the semiconductor element 8 mounted on the semiconductor device 230. The material of the third external connection terminal 16 is preferably the same copper as the material of the wiring 3, but any other material may be used as long as it is a conductive material.

  The adhesive layer 15 is formed on the back surface (upper surface in the drawing) of the semiconductor element 8 mounted on the semiconductor device 221, and connects the third external connection terminal 16 and the semiconductor element 8 mounted on the semiconductor device 221. . The adhesive layer 15 may be formed on the third external connection terminal 16. The adhesive layer 15 is preferably made of conductive solder, resin, or sheet. By making the adhesive layer 15 conductive, the potential of the wiring 3 can be fixed to a ground potential or the like, and the potential can be stabilized.

  As described above, the semiconductor module 260 is configured.

  Next, a method for manufacturing the semiconductor module 260 will be described.

  First, the third external connection terminal 16 is formed at the position of the back surface of the insulating substrate 2 corresponding to the semiconductor element 8 mounted on the semiconductor device 230, and on the back surface of the semiconductor element 8 mounted on the semiconductor device 221. An adhesive layer 15 is formed. Here, the adhesive layer 15 is preferably conductive solder, resin, or sheet. By making it conductive, the potential of the wiring 3 can be fixed to a ground potential or the like, and the potential can be stabilized.

  Next, the first external connection terminal 14 of the semiconductor device 221 and the second external connection terminal 6 of the semiconductor device 230 are joined via the solder ball 10. Here, the first external connection terminal 14 of the semiconductor device 221 and the second external connection terminal 6 of the semiconductor device 230 are joined by a solder joining method in which the solder balls 10 are joined by heating. At the same time as the solder bonding, the semiconductor element 8 of the semiconductor device 221 and the third external connection terminal 16 of the semiconductor device 230 are bonded by the adhesive layer 15.

  In this way, the semiconductor device 220 and the semiconductor device 221 are joined. As a result, the semiconductor module 260 having good stability and electrical stability and high bonding reliability can be formed.

(Embodiment 3)
In the second embodiment, an example in which a plurality of semiconductor devices are bonded using solder balls has been described. In the third embodiment, a mode different from the second embodiment will be described.

  FIG. 7 is a cross-sectional view showing a structure of a semiconductor module in which two semiconductor devices according to the third embodiment are joined. Elements similar to those in FIGS. 4 and 5 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The semiconductor module 350 shown in FIG. 7 differs from the semiconductor module 250 shown in FIG. 5 in the configuration of the first external connection terminal 24 and the second external connection terminal 26, and without using a solder ball. 320 and the semiconductor device 321 are joined.

  The semiconductor device 320 includes the first external connection terminal 24 and the second external connection terminal 26, but the solder ball 10 is not formed on the second external connection terminal 26. On the other hand, the semiconductor device 320 similarly includes a first external connection terminal 24 and a second external connection terminal 26, and a solder ball 10 is formed on the second external connection terminal 26.

  The first external connection terminal 24 is formed on the wiring 3 so as to protrude from the insulating resin 7 so as to be thicker than the wiring 3 and thicker than the insulating resin 7.

  The second external connection terminal 26 is formed on the back surface of the insulating substrate 2 and is electrically connected to the wiring 3 through a through hole (through hole) formed in the insulating substrate 2. Further, the thickness of the second external connection terminal 26 is formed to be greater than the thickness of the wiring 3.

  Here, the value obtained by adding the thickness of the first external connection terminal 24 and the thickness of the second external connection terminal 26 is larger than the value obtained by adding the thickness of the semiconductor element 8 and the thickness of the protruding electrode 5. Accordingly, the semiconductor device 320 and the semiconductor device 321 can be joined using only the first external connection terminal 24 and the second external connection terminal 26 without forming the solder ball 10. In addition, the 1st external connection terminal 24 and the 2nd external connection terminal 26 are joined by the method of metal joining, for example using ultrasonic waves and heating together.

  The semiconductor module 350 is configured as described above.

  Next, a method for manufacturing the semiconductor module 350 will be described.

  First, the bonding region 1, the wiring 3, the first external connection terminal 24 having the thickness as described above, the protruding electrode 5, and the insulating resin 7 are formed on the insulating substrate 2, and the insulating property is increased. By forming the second external connection terminal 26 on the back surface of the substrate 2, the wiring substrate 200 is formed.

  Next, the semiconductor element 8 is mounted on the wiring board 200 and the sealing resin 9 is formed to form the semiconductor device 320. Similarly, the semiconductor device 321 is formed.

  Next, the semiconductor device 320 and the semiconductor device 321 are mounted in a stacked manner to form the semiconductor module 350. That is, the semiconductor module 350 is formed by bonding the first external connection terminal 24 in the semiconductor device 321 and the second external connection terminal 26 in the semiconductor device 320. Here, as a bonding method, the first external connection terminal 24 in the semiconductor device 321 and the second external connection terminal 26 in the semiconductor device 320 are metal-bonded by using ultrasonic waves and heating together. That is, the boundary portion between the first external connection terminal 24 in the semiconductor device 321 and the second external connection terminal 26 in the semiconductor device 320 is melted by using ultrasonic waves and heating together to form the metal joint portion 27. Be joined.

  Thus, since the semiconductor device 320 and the semiconductor device 321 are joined without using solder, the wiring 3, the first external connection terminal 24, and the second external connection terminal 26 are not eroded by solder, for example, solder. It is possible to enable bonding without causing a short circuit between external connection terminals between adjacent semiconductor devices due to swelling.

  Further, since the semiconductor device 320 and the semiconductor device 321 are connected by metal bonding, the bonding is stable and fine pitch bonding is possible. Furthermore, since it can join at low temperature by using an ultrasonic wave and heating together, joining with low joining stress is realizable.

  The surfaces of the first external connection terminal 24 and the second external connection terminal 26 are preferably formed with gold plating or the like. By forming a gold plating layer, stable ultrasonic bonding is possible.

  Further, the solder ball 10 may be formed on the second external connection terminal 26 of the semiconductor device 321. This facilitates mounting on a mother board or a semiconductor device.

(Embodiment 4)
In Embodiment 4, a mode different from the semiconductor device described in Embodiment 2 will be described.

  FIG. 8 is a cross-sectional view showing the structure of the semiconductor device in the fourth embodiment. Elements similar to those in FIG. 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The semiconductor device 420 shown in FIG. 8 differs from the semiconductor device 220 according to the second embodiment in the configuration of the first external connection terminal 34, the adhesive layer 15, and the metal plate 39 having the counterbore part 30.

  A semiconductor device 420 shown in FIG. 8 includes an insulating substrate 2, a wiring 3 formed on the insulating substrate 2, a first external connection terminal 34, a protruding electrode 5, a second external connection terminal 6, and an insulating resin 7. A wiring board 200 having semiconductor elements 8, a semiconductor element 8, a sealing resin 9, solder balls 10, an adhesive layer 15, and a metal plate 39 having a counterbore part 30.

  The metal plate 39 is a metal plate having a counterbore portion 30 which is a recessed portion at a position corresponding to the mounted semiconductor element 8, and is bonded to the first external connection terminal 34 and the mounted semiconductor element 8. Has been. The metal plate 39 is metal-bonded to the first external connection terminal 34 and is connected to the semiconductor element 8 via an adhesive layer 15 formed on the back surface.

  As described above, the semiconductor device 420 is configured.

  Thus, since the first external connection terminal 34 is metal-bonded to the metal plate 39 instead of solder, it is possible to perform bonding without erosion of solder. Moreover, joining at low temperature is also possible by using ultrasonic waves and heating together. The surface of the first external connection terminal 34 is preferably formed with gold plating or the like. This is because the formation of a gold plating layer enables metal bonding by stable ultrasonic waves.

  In the semiconductor device 420, a layer of a heat radiating resin or a heat radiating sheet having a high heat radiating property is formed at a position corresponding to the counterbore part 30 of the metal plate 39 and the semiconductor element 8, and the wiring board 200 and the metal plate 39 are connected to each other. When the first external connection terminal 34 is metal-joined, it may be joined at the same time. In that case, the semiconductor device 420 with excellent heat dissipation can be realized.

  As described above, according to the embodiment, it is possible to arbitrarily increase the thickness of the wiring located in the portion serving as the first external connection terminal on the wiring board of the semiconductor device.

  Further, while realizing a narrow pitch of wiring on the wiring board, the bonding reliability of the first external connection terminal, the second external connection terminal, etc., which become connection pads for stacking a plurality of semiconductor devices in multiple stages is improved. It can be secured.

  In addition to forming the protruding electrodes on the wiring of the wiring board, it is possible to easily join the heat sink by ultrasonic bonding or the like.

  As described above, according to the present invention, it is possible to realize a wiring substrate, a semiconductor device, a semiconductor module, and a manufacturing method thereof that enable narrow pitch wiring and high bonding reliability.

  As mentioned above, although the wiring board, semiconductor device, semiconductor module, and manufacturing method of the present invention have been described based on the embodiment, the present invention is not limited to this embodiment. Unless it deviates from the meaning of this invention, the form which carried out the various deformation | transformation which those skilled in the art can think to this embodiment, and the structure constructed | assembled combining the component in different embodiment is also contained in the scope of the present invention. .

  INDUSTRIAL APPLICABILITY The present invention can be used for a wiring board, a semiconductor device, a semiconductor module, and a method for manufacturing the same, and particularly used for FCB or POP, etc. And the manufacturing method thereof.

DESCRIPTION OF SYMBOLS 1 Junction area | region 2 Insulating board | substrate 3,903 Wiring 4,14,24,34 1st external connection terminal 5 Projection electrode 6,26 2nd external connection terminal 7 Insulating resin 8 Semiconductor element 9 Sealing resin 10 Solder ball DESCRIPTION OF SYMBOLS 15 Adhesion layer 21 Metal layer 27 Metal joint part 30 Counterbore part 39 Metal plate 100, 200, 900 Wiring board 120, 220, 221, 230, 320, 321, 420 Semiconductor device 250, 260, 350 Semiconductor module 902 Insulating base material 907 Resin layer 921 Metal layer 922 Solder bump

Claims (31)

A wiring board on which a semiconductor element is mounted on a main surface,
An insulating substrate;
As routing wiring from the semiconductor element to be mounted, wiring provided on the main surface of the insulating substrate,
As an external connection terminal to be connected to the outside, an external connection terminal portion formed in a partial region of the wiring,
At least the main surface of the insulating base material is formed so as to cover the main surface of the insulating base material in a state where a mounting region in which the semiconductor element is to be mounted and a connection surface of the external connection terminal portion are exposed. With insulating resin,
The thickness of the said external connection terminal part in the normal line direction of the main surface of the said insulating base material is thicker than the thickness of the normal direction of the main surface of the said insulating base material in the said wiring. The thickness of the external connection terminal portion is thinner than the thickness in the normal direction of the main surface of the insulating base in the insulating resin,
The wiring board according to claim 1, wherein an outer periphery of the connection surface of the external connection terminal portion is covered with the insulating resin. The external connection terminal portion is formed such that the connection surface has a height protruding from the upper surface of the insulating resin,
The wiring board according to claim 1, wherein the insulating resin is formed to be in close contact with a part of a side surface of the external connection terminal portion. A method of manufacturing a wiring board on which a semiconductor element is mounted on a main surface,
A first step of providing a wiring made of a conductor on the main surface of the insulating substrate as a routing wiring from the semiconductor element to be mounted;
A second step of forming an external connection terminal portion in a partial region of the wiring as an external connection terminal to be connected to the outside;
Insulating resin so as to cover at least the main surface of the insulating base material in a state where the mounting area on which the semiconductor element is to be mounted on the main surface of the insulating base material and the connection surface of the external connection terminal portion are exposed. A third step of forming
In the second step, the thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base material is thicker than the thickness of the wiring in the normal direction of the main surface of the insulating base material. A method of manufacturing a wiring board to be formed. In the second step, the thickness of the external connection terminal portion is formed to be thinner than the thickness of the insulating resin in the normal direction of the main surface of the insulating base,
further,
The method for manufacturing a wiring board according to claim 4, wherein in the third step, the insulating resin is formed so as to cover an outer periphery of the connection surface of the external connection terminal portion. In the second step, the external connection terminal portion is formed such that the connection surface has a height protruding from the upper surface of the insulating resin,
The method for manufacturing a wiring board according to claim 4, wherein in the third step, the insulating resin is formed so as to be in close contact with a part of a side surface of the external connection terminal portion. The method according to any one of claims 4 to 6, further comprising forming a protruding electrode for electrically connecting to the semiconductor element to be mounted in a partial region of the wiring in the mounting region. A method for manufacturing a wiring board. The wiring board according to claim 1;
A semiconductor device comprising: a semiconductor element mounted on the mounting region of the wiring board. The thickness of the external connection terminal portion is thinner than the thickness of the insulating resin in the normal direction of the main surface of the insulating base,
The semiconductor device according to claim 8, wherein an outer periphery of the connection surface of the external connection terminal portion is covered with the insulating resin. The external connection terminal portion is formed such that the connection surface has a height protruding from the upper surface of the insulating resin,
The semiconductor device according to claim 8, wherein the insulating resin is formed in close contact with a part of a side surface of the external connection terminal portion. The wiring board further includes a protruding electrode for electrically connecting to the semiconductor element in a partial region of the wiring in the mounting region,
The semiconductor device according to claim 8, wherein the protruding electrode is made of the same metal as the external connection terminal portion. The semiconductor device further includes:
The semiconductor device according to claim 8, further comprising a back surface external connection terminal portion different from the external connection terminal portion formed on a surface opposite to the main surface of the insulating base material. The thickness of the back surface external connection terminal portion in the normal direction of the main surface of the insulating base is formed thicker than the thickness of the wiring in the normal direction of the main surface of the insulating base. 12. The semiconductor device according to 12. The semiconductor device further includes:
With a metal plate,
The semiconductor device according to claim 10, wherein the metal plate is metal-bonded at the connection surface of the external connection terminal portion. The semiconductor device further includes:
With a metal plate,
The semiconductor device according to claim 10, wherein the metal plate is joined to the connection surface of the external connection terminal portion by solder. The semiconductor device according to claim 15, wherein the external connection terminal portion is fixed to a ground potential. The first and second semiconductor devices according to claim 8,
The second semiconductor device is stacked on the first semiconductor device,
The first semiconductor device is joined to the second semiconductor device by soldering the external connection terminal portion of the first semiconductor device. In the first and second semiconductor devices,
The thickness of the external connection terminal portion in the normal direction of the main surface of the insulating substrate is thinner than the thickness of the insulating resin in the normal direction of the main surface of the insulating substrate,
The semiconductor module according to claim 17, wherein an outer periphery of the connection surface of the external connection terminal portion is covered with the insulating resin. In the first and second semiconductor devices,
The external connection terminal portion is formed such that the connection surface has a height protruding from the upper surface of the insulating resin,
The semiconductor module according to claim 17, wherein the insulating resin is formed in close contact with a part of a side surface of the external connection terminal portion. The first and second semiconductor devices according to claim 8,
The second semiconductor device is stacked on the first semiconductor device,
The first semiconductor device is joined to the second semiconductor device by metal joining the external connection terminal portion of the first semiconductor device. The semiconductor module further includes:
An adhesive layer is provided between the semiconductor element of the first semiconductor device and the back surface of the wiring substrate of the second semiconductor device;
The semiconductor module according to any one of claims 17 to 20, wherein the first semiconductor device and the second semiconductor device are bonded via the adhesive layer. The semiconductor module according to claim 21, wherein the adhesive layer is made of a conductive material. A first step of providing a wiring made of a conductor on the main surface of the insulating base material as a routing wiring from a semiconductor element to be mounted, and an external connection terminal in a part of the wiring as an external connection terminal connected to the outside The insulating base material in a state in which the second step of forming the portion and at least the mounting region where the semiconductor element is to be mounted on the main surface of the insulating base material and the connection surface of the external connection terminal portion are exposed. A third step of forming an insulating resin so as to cover the main surface, and in the second step, the thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base is A wiring board manufacturing process for manufacturing a wiring board on which a semiconductor element is to be mounted on the main surface, by forming it thicker than the thickness of the wiring in the normal direction of the main surface of the conductive substrate;
A semiconductor device mounting method comprising: mounting a semiconductor element on the mounting region of the wiring board by using ultrasonic waves and heating together. Furthermore, in the second step, forming a back surface external connection terminal portion different from the external connection terminal portion on the surface opposite to the main surface of the insulating base material;
And after the semiconductor element mounting step, forming a solder on the backside external connection terminal portion,
In the second step, the thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base material is greater than the thickness of the insulating resin in the normal direction of the main surface of the insulating base material. Forming thin,
The method for manufacturing a semiconductor device according to claim 23, wherein in the third step, the insulating resin is formed so as to cover an outer periphery of the connection surface of the external connection terminal portion. In the second step, the external connection terminal portion is formed such that the connection surface has a height protruding from the upper surface of the insulating resin,
The method for manufacturing a semiconductor device according to claim 23, wherein, in the third step, the insulating resin is formed so as to be in close contact with a part of a side surface of the external connection terminal portion. Furthermore, in the second step, forming a back surface external connection terminal portion different from the external connection terminal portion on the surface opposite to the main surface of the insulating base material;
The method for manufacturing a semiconductor device according to claim 25, further comprising a step of forming solder on the backside external connection terminal portion after the semiconductor element mounting step. The semiconductor device according to claim 23, further comprising a step of joining the metal plate and the semiconductor device by metal joining the metal plate at the connection surface of the external connection terminal portion after the semiconductor element mounting step. Device manufacturing method. A first step of providing a wiring made of a conductor on the main surface of the insulating base material as a routing wiring from a semiconductor element to be mounted, and an external connection terminal in a part of the wiring as an external connection terminal connected to the outside A second step of forming a portion, and a third step of forming a back surface external connection terminal portion different from the external connection terminal portion on the surface opposite to the main surface of the insulating base material in the second step. Insulating so as to cover at least the main surface of the insulating base material in a state in which the mounting area where the semiconductor element is to be mounted on the main surface of the insulating base material and the connection surface of the external connection terminal portion are exposed. A fourth step of forming a resin; and a fifth step of mounting the semiconductor element in the mounting region. In the second step, the external connection terminal in the normal direction of the main surface of the insulating substrate. The thickness of the insulating substrate By forming thicker than the thickness of the wiring in the normal direction of the surface, the semiconductor device manufacturing process for manufacturing the first and second semiconductor device,
And laminating the second semiconductor device on the first semiconductor device,
In the stacking step, the first semiconductor device is joined to the second semiconductor device by soldering the external connection terminal portion of the first semiconductor device. In the third step, the thickness of the external connection terminal portion in the normal direction of the main surface of the insulating base in the first and second semiconductor devices is determined by the method of the main surface of the insulating base. Forming thinner than the thickness of the insulating resin in the line direction;
29. The manufacturing of a semiconductor module according to claim 28, wherein, in the fourth step, the insulating resin in the first and second semiconductor devices is formed so as to cover an outer periphery of the connection surface of the external connection terminal portion. Method. In the third step, the external connection terminal portions in the first and second semiconductor devices are formed such that the connection surface is at a height protruding from the upper surface of the insulating resin,
29. The method of manufacturing a semiconductor module according to claim 28, wherein, in the fourth step, the insulating resin in the first and second semiconductor devices is formed in close contact with a part of a side surface of the external connection terminal portion. A first step of providing a wiring made of a conductor on the main surface of the insulating base material as a routing wiring from a semiconductor element to be mounted, and an external connection terminal in a part of the wiring as an external connection terminal connected to the outside A second step of forming a portion, and a third step of forming a back surface external connection terminal portion different from the external connection terminal portion on the surface opposite to the main surface of the insulating base material in the second step. Insulating so as to cover at least the main surface of the insulating base material in a state in which the mounting area where the semiconductor element is to be mounted on the main surface of the insulating base material and the connection surface of the external connection terminal portion are exposed. A fourth step of forming a resin; and a fifth step of mounting the semiconductor element in the mounting region. In the second step, the external connection terminal in the normal direction of the main surface of the insulating substrate. The thickness of the insulating substrate By forming thicker than the thickness of the wiring in the normal direction of the surface, the semiconductor device manufacturing process for manufacturing the first and second semiconductor device,
And laminating the second semiconductor device on the first semiconductor device,
In the stacking step, the first semiconductor device is bonded to the second semiconductor device by metal bonding of the external connection terminal portion of the first semiconductor device using a combination of ultrasonic waves and heating. Manufacturing method of semiconductor module.

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