JP2010219379A - Method of mounting electronic component - Google Patents

Method of mounting electronic component Download PDF

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JP2010219379A
JP2010219379A JP2009065725A JP2009065725A JP2010219379A JP 2010219379 A JP2010219379 A JP 2010219379A JP 2009065725 A JP2009065725 A JP 2009065725A JP 2009065725 A JP2009065725 A JP 2009065725A JP 2010219379 A JP2010219379 A JP 2010219379A
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slope
electronic component
insulating
mounting
droplets
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Noboru Uehara
昇 上原
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Seiko Epson Corp
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Seiko Epson Corp
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/0555—Shape
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of mounting an electronic component having an insulating slope, provided so as to reduce a step, formed more stably by an ink jet method. <P>SOLUTION: Laminates 32 to 34 are formed in order from a position close to a semiconductor chip 12 by discharging a droplet D to be isolated at landing and laminating a slope element cured each time the droplet is discharged, and a slope 17 is formed of those laminates 32 to 34. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、実装基板の実装面に配置される電子部品と実装面とによって形成される段差部に絶縁性スロープを形成して電子部品を実装する電子部品の実装方法に関する。   The present invention relates to an electronic component mounting method for mounting an electronic component by forming an insulating slope at a stepped portion formed by the electronic component disposed on the mounting surface of the mounting substrate and the mounting surface.

実装基板の電極パッドとこれに実装される半導体チップなどの電極パッドとを接続する配線の形成方法には、近年、導電性インクからなる液滴を乾燥して焼成することにより配線を形成するといったインクジェット法が提案されている。インクジェット法は、配線の形状を液滴の単位で変更できるために、従来のワイヤボンディング法に比べて、配線構造の自由度を大幅に拡張させることができる。そのうえ、ワイヤボンディング法のような空中配線を必要としないために、配線の占有空間を小さくすることもでき、その結果、電子部品の実装スペースそのものを縮小することもできる。   In recent years, a method of forming a wiring for connecting an electrode pad of a mounting substrate and an electrode pad such as a semiconductor chip mounted on the mounting substrate is to form a wiring by drying and firing droplets made of conductive ink. An ink jet method has been proposed. Since the ink jet method can change the shape of the wiring in units of droplets, the degree of freedom of the wiring structure can be greatly expanded compared to the conventional wire bonding method. In addition, since the aerial wiring as in the wire bonding method is not required, the occupied space of the wiring can be reduced, and as a result, the mounting space of the electronic component itself can be reduced.

ところで、上述のようにして電子部品を実装する場合には、実装基板の実装面と電子部品との間に電子部品の厚みに相当する段差が形成されることになる。インクジェット法を利用する場合であれば、このような段差に沿っても配線を形成することはできる。ただし、こうした段差に沿って形成される配線は、屈曲する箇所が段差の分だけ多くなってしまい、配線そのものの機械的さらには電気的な信頼性を損なう虞がある。そのため、配線の接続対象である電極パッド間に段差があるような場合、上述したインクジェット法では、通常、配線へのこうした機械的なストレスを抑えるべく、段差を緩和するための技術が採用されている。   By the way, when the electronic component is mounted as described above, a step corresponding to the thickness of the electronic component is formed between the mounting surface of the mounting substrate and the electronic component. If the inkjet method is used, the wiring can be formed along such a step. However, the wiring formed along such a step has a number of bent portions that are increased by the amount of the step, which may impair the mechanical and electrical reliability of the wiring itself. Therefore, when there is a step between the electrode pads to which the wiring is to be connected, the above-described inkjet method usually employs a technique for reducing the step to suppress such mechanical stress on the wiring. Yes.

このような段差を緩和するための技術には、例えば特許文献１に記載されるように、電子部品のパッド形成面と実装面とを繋ぐように吐出された絶縁性の樹脂材料からなる絶縁性スロープが利用されている。そして上記段差を緩和するかたちに構成された絶縁性スロープ上に導電性インクからなる液滴が吐出されて、この導電性インクが乾燥及び焼成されることにより上記配線が形成される。これにより配線としての屈曲が緩和され、機械的かつ電気的な信頼性も高く維持されるようになる。   As a technique for reducing such a step, for example, as described in Patent Document 1, an insulating property made of an insulating resin material discharged so as to connect a pad forming surface and a mounting surface of an electronic component is used. A slope is used. Then, droplets made of conductive ink are ejected onto an insulating slope configured to relieve the step, and the conductive ink is dried and baked to form the wiring. As a result, the bending as the wiring is eased, and the mechanical and electrical reliability is maintained high.

特開２００６−１４７６５０号公報JP 2006-147650 A

ところで、実装スペースのさらなる縮小化や実装基板の微細化が進行する近年では、上述した絶縁性スロープの位置や形状などにも高い精度が必要とされている。そしてこうした要請に応える絶縁性スロープの製造方法としても上記インクジェット法が検討されている。   By the way, in recent years when the mounting space is further reduced and the mounting substrate is miniaturized, high accuracy is required for the position and shape of the insulating slope described above. The ink jet method has been studied as a method for producing an insulating slope that meets these requirements.

絶縁性インクを微少な液滴として吐出させるインクジェット法では、こうした液滴を形成するために例えば２０ｃＰといった低い粘度の絶縁性インクを使用する必要がある。一方、低粘度のインクからなる液滴が実証面上に着弾した場合には、その液滴の濡れ広がりが大きくなり、着弾した液滴自体の形状や位置に関わる精度が得難くなる。そのため、着弾した液滴自体の形状や位置に関わる精度を確保することを目的として、こうした濡れ広がりを抑えるべく、液滴が着弾する実装面などに予め表面処理を施す検討がなされている。   In the ink jet method in which the insulating ink is ejected as fine droplets, it is necessary to use an insulating ink having a low viscosity of, for example, 20 cP in order to form such droplets. On the other hand, when a droplet made of low-viscosity ink lands on the demonstration surface, the droplet spreads greatly, making it difficult to obtain accuracy related to the shape and position of the landed droplet itself. For this reason, in order to ensure the accuracy related to the shape and position of the landed droplet itself, in order to suppress such wetting and spreading, a surface treatment is performed in advance on the mounting surface on which the droplet landes.

具体的には、図５に示されるように、実装基板４１の実装面４１ａや電子部品４２のパッド形成面４２ａに、まず撥液層４３が形成されることにより、それらの面に均一で高い撥液性が付与される（図５（ａ））。次いでこの撥液層４３に紫外線Ｌが照射されて、撥液層４３に対する液滴の接触角が所望する接触角になるように、撥液層４３の撥液性が調整される。このようにして表面処理が施されると、絶縁性スロープを形成するための液層５０Ｌがそこに形成されて（図５（ｃ），（ｄ））、撥液層４３によって濡れ広がりが軽減された状態でその液層５０Ｌが硬化されることにより、絶縁性スロープ５０Ｄが形成される（図５（ｅ））。   Specifically, as shown in FIG. 5, the liquid repellent layer 43 is first formed on the mounting surface 41 a of the mounting substrate 41 and the pad forming surface 42 a of the electronic component 42, so that the surfaces are uniform and high. Liquid repellency is imparted (FIG. 5A). Next, the liquid repellent layer 43 is irradiated with ultraviolet rays L, and the liquid repellency of the liquid repellent layer 43 is adjusted so that the contact angle of the droplet with respect to the liquid repellent layer 43 becomes a desired contact angle. When the surface treatment is performed in this way, a liquid layer 50L for forming an insulating slope is formed there (FIGS. 5C and 5D), and wetting and spreading are reduced by the liquid repellent layer 43. In this state, the liquid layer 50L is cured to form an insulating slope 50D (FIG. 5E).

だが、上記の方法が利用されたとしても、撥液層４３の撥液作用の発現が撥液層４３と液層５０Ｌとの界面に限られることとなり、こうした界面に対する液量が少ない場合にはその濡れ広がりが抑制可能にもなるが、電子部品４２の厚さが必要とされる上記液層５０Ｌにおいてはその撥液作用が不足してしまう。その結果、図５（ｄ）に示されるように、液層５０Ｌの一部あるいは全部が濡れ広がってしまい、設計位置や設計形状から大きなずれを招くことになってしまう。またこうした液層５０Ｌからなる絶縁性スロープ５０Ｄに積層された配線４８にあっては、絶縁性スロープ５０Ｄの位置や形状に応じてその膜厚が異なることとなり、結局のところ、機械的さらには電気的な信頼性を損なうものとなってしまう。   However, even if the above method is used, the liquid repellent action of the liquid repellent layer 43 is limited to the interface between the liquid repellent layer 43 and the liquid layer 50L. Although the wetting and spreading can be suppressed, the liquid repellent action is insufficient in the liquid layer 50L where the thickness of the electronic component 42 is required. As a result, as shown in FIG. 5 (d), part or all of the liquid layer 50L spreads out, resulting in a large deviation from the design position and design shape. Further, in the wiring 48 laminated on the insulating slope 50D composed of the liquid layer 50L, the film thickness varies depending on the position and shape of the insulating slope 50D. The reliability will be impaired.

本発明は、上記課題を解決するためになされたものであり、その目的は、実装基板の実装面に配置される電子部品と実装面とによって形成される段差部に絶縁性スロープを形成して電子部品を実装する電子部品の実装方法においてその絶縁性スロープの加工精度を向上させる電子部品の実装方法を提供することにある。   The present invention has been made in order to solve the above-described problems, and an object of the present invention is to form an insulating slope at a step portion formed by an electronic component disposed on a mounting surface of a mounting board and the mounting surface. An object of the present invention is to provide an electronic component mounting method for improving the processing accuracy of the insulating slope in the electronic component mounting method for mounting the electronic component.

本発明の電子部品の実装方法は、実装基板の実装面と該実装面に配置された電子部品とにより形成された段差に該段差を緩和する絶縁性スロープを形成して前記電子部品を前記実装面に実装する電子部品の実装方法において、絶縁性インクからなる液滴を吐出してその液滴を孤立した状態で硬化することにより形成するスロープ要素を、前記実装面の面方向に敷き詰めて、かつ、前記絶縁性スロープの厚み方向に積み重ねる態様で、前記液滴の吐出と硬化とを繰り返し、前記スロープ要素を積み重ねるときには、前記実装面に沿って隣接する前記スロープ要素を異なるタイミングで積み重ねることにより前記絶縁性スロープを形成することを要旨とする。   In the electronic component mounting method of the present invention, the electronic component is mounted by forming an insulating slope that relaxes the step in a step formed by the mounting surface of the mounting substrate and the electronic component disposed on the mounting surface. In the mounting method of the electronic component to be mounted on the surface, a slope element formed by discharging a droplet made of insulating ink and curing the droplet in an isolated state is spread in the surface direction of the mounting surface, And, in the aspect of stacking in the thickness direction of the insulating slope, repeating the discharge and curing of the droplets, when stacking the slope elements, by stacking the adjacent slope elements along the mounting surface at different timings The gist is to form the insulating slope.

隣接するように吐出された液滴は、それを構成する液状体の表面張力により、液滴同士が合一するように流動する。そのため上記絶縁性スロープの形成過程において隣接するように液滴が吐出されると、絶縁性インクが有する表面張力によって液滴同士が合一してしまい、本来定着されるべき位置から液滴が流動することとなってしまう。そのため、このようにして形成された絶縁性スロープは、それを構成する液滴自体が流動するために本来形成されるべき位置からずれてしまい、その形状もスロープとしての機能を損なうものになってしまう。これに対して本電子部品の実装方法によれば、絶縁性スロープを構成するスロープ要素が孤立した液滴ごとに形成されるため、実装面の面方向のみならず、絶縁性スロープの厚み方向においても液滴の合一が抑制されることになり、実装面の面方向及び絶縁性スロープの厚み方向の双方において絶縁性スロープの加工精度が向上可能になる。また吐出される液滴がその吐出ごとに硬化されるため、着弾した液滴自体の濡れ広がりが抑制されることにもなり、こうして形成されるスロープ要素の積層体であれば、その位置や形状の再現性も向上可能となる。そして、こうした積層体から絶縁性スロープが構成されることから、たとえ急峻なスロープ形状であっても、絶縁性スロープ全体としての形状が崩されることなく、その形状が実現可能になる。   The droplets discharged so as to be adjacent to each other flow so that the droplets are united by the surface tension of the liquid material constituting the droplets. For this reason, when droplets are ejected adjacent to each other in the process of forming the insulating slope, the droplets coalesce due to the surface tension of the insulating ink, and the droplets flow from the position where they should be fixed. Will end up. Therefore, the insulating slope formed in this way is displaced from the position where it should originally be formed because the liquid droplets constituting the same flow, and the shape of the insulating slope also impairs the function as the slope. End up. On the other hand, according to the mounting method of the electronic component, since the slope element constituting the insulating slope is formed for each isolated droplet, not only in the surface direction of the mounting surface but also in the thickness direction of the insulating slope. In addition, the coalescence of the droplets is suppressed, and the processing accuracy of the insulating slope can be improved both in the surface direction of the mounting surface and in the thickness direction of the insulating slope. In addition, since the discharged droplets are cured for each discharge, the wetting and spreading of the landed droplets themselves is also suppressed. The reproducibility can be improved. And since an insulating slope is comprised from such a laminated body, even if it is a steep slope shape, the shape as the whole insulating slope will not be destroyed, but it becomes realizable.

この電子部品の実装方法は、前記電子部品に近い位置から順に前記スロープ要素を積み重ねてもよい。
電子部品と実装面との段差を緩和する絶縁性スロープは、電子部品に近い位置ほどその厚みが厚くなるかたちに構成される。つまり上述した絶縁性スロープは、電子部品に近い位置ほどそのスロープ要素が多く積み重ねられることになる。この電子部品の実装方法によれば、電子部品に近い側から順にスロープ要素が積み重ねられるため、先行して積み重ねられるスロープ要素の各々が電子部品の側面に直接あるいは間接的に支持され続けることになる。それゆえ上記絶縁性スロープの形成過程においては、積み重ねられたスロープ要素の崩れがこうした支持態様により抑制されることになり、上述した効果がより確実なものとなる。 In this electronic component mounting method, the slope elements may be stacked in order from a position close to the electronic component.
The insulating slope that relaxes the step between the electronic component and the mounting surface is configured such that the closer to the electronic component, the thicker the thickness. In other words, the above-described insulating slope has a larger number of slope elements stacked closer to the electronic component. According to this electronic component mounting method, since the slope elements are stacked in order from the side close to the electronic component, each of the previously stacked slope elements continues to be supported directly or indirectly on the side surface of the electronic component. . Therefore, in the process of forming the insulating slope, the collapse of the stacked slope elements is suppressed by such a support mode, and the above-described effect is more reliable.

この電子部品の実装方法は、実装面に沿って敷き詰められた複数のスロープ要素からなる層に他のスロープ要素を積み重ねる態様が繰り返されることにより前記絶縁性スロープを形成してもよい。   In this electronic component mounting method, the insulating slope may be formed by repeating a mode in which other slope elements are stacked on a layer composed of a plurality of slope elements spread along the mounting surface.

この電子部品の実装方法によれば、実装面に沿う層ごとにスロープ要素が積み重ねられるため、先行して形成された層内では、スロープ要素の各々が実装面に沿って隣接する他のスロープ要素により支持されることになる。それゆえ上記絶縁性スロープの形成過程においては、積み重ねられたスロープ要素の崩れがこうした支持態様により抑制されることになり、上述した効果がより確実なものとなる。   According to this electronic component mounting method, since the slope elements are stacked for each layer along the mounting surface, each of the slope elements is adjacent to the other slope element along the mounting surface in the previously formed layer. It will be supported by. Therefore, in the process of forming the insulating slope, the collapse of the stacked slope elements is suppressed by such a support mode, and the above-described effect is more reliable.

この電子部品の実装方法は、前記絶縁性インクが光硬化性樹脂からなることが好ましい。
吐出ごとの硬化が可能な絶縁性インクとしては、例えば光硬化性樹脂からなるインクや熱硬化性樹脂からなるインクが挙げられる。ただし熱硬化性樹脂からなるインクを用いた場合には、吐出された液滴を加熱する必要があるため、その加熱によって実装基板や電子部品などが熱的な損傷を受けてしまう虞がある。この電子部品の実装方法によれば、吐出された液滴に対して所定波長の光が照射されるだけで液滴が硬化可能となり、上述したような実装基板や電子部品への熱的な影響が回避可能になる。 In this electronic component mounting method, the insulating ink is preferably made of a photocurable resin.
Examples of the insulating ink that can be cured for each discharge include ink made of a photocurable resin and ink made of a thermosetting resin. However, when ink made of a thermosetting resin is used, it is necessary to heat the ejected droplets, which may cause thermal damage to the mounting substrate, electronic components, and the like. According to this electronic component mounting method, the liquid droplets can be cured simply by irradiating the ejected liquid droplets with light of a predetermined wavelength, and the thermal influence on the mounting substrate and the electronic component as described above. Can be avoided.

なお光硬化性樹脂を用いた場合には、先行して積み重ねられたスロープ要素が後続する液滴への照射に対して光学的な障害となる虞がある。この点、電子部品に近い位置から順にスロープ要素が積み重ねられる態様であれば、先行して積み重ねられたスロープ要素が電子部材の側面に張り付いたかたちになるため、上述したような光照射に関わる問題が軽減されることにもなる。また実装面の面方向に沿う層ごとにスロープ要素が積み重ねられる態様であっても、同じく光照射に関わる問題が軽減されることにもなる。   In addition, when using a photocurable resin, there exists a possibility that the slope element previously piled up may become an optical obstacle with respect to irradiation to the subsequent droplet. In this respect, if the slope elements are stacked in order from the position close to the electronic component, the previously stacked slope elements are attached to the side surface of the electronic member. The problem will be reduced. Moreover, even in a mode in which the slope elements are stacked for each layer along the surface direction of the mounting surface, the problem related to light irradiation is also reduced.

この電子部品の実装方法は、導電性インクからなる液滴を前記絶縁性スロープの表面に吐出して前記実装基板の電極パッドと前記電子部品の電極パッドとを結ぶ配線を前記スロープの表面に形成してもよい。   In this electronic component mounting method, a droplet made of conductive ink is ejected onto the surface of the insulating slope to form a wiring connecting the electrode pad of the mounting substrate and the electrode pad of the electronic component on the surface of the slope. May be.

この電子部品の実装方法によれば、絶縁性スロープが高い加工精度の下で形成されることから、それに着弾した液滴も位置ずれなどが軽減されることとなる。その結果、絶縁性スロープに積層される配線に関して、その形状や膜厚のばらつきが抑えられることになり、ひいては機械的さらには電気的な信頼性が向上されることになる。   According to this electronic component mounting method, since the insulating slope is formed with high processing accuracy, the positional deviation of the liquid droplets landing on the slope is reduced. As a result, variations in the shape and film thickness of wirings stacked on the insulating slope are suppressed, and as a result, mechanical and electrical reliability is improved.

（ａ）電子装置を示す平面図、（ｂ）１ｂ−１ｂ線に沿った断面図。(A) The top view which shows an electronic device, (b) Sectional drawing along line 1b-1b. （ａ）（ｂ）絶縁性スロープのパターン格子を模式的に示す図。(A) (b) The figure which shows typically the pattern grid | lattice of an insulating slope. 電子部品の実装方法を示すフローチャート。The flowchart which shows the mounting method of an electronic component. （ａ）〜（ｈ）絶縁性スロープの形成過程を示す図。The figure which shows the formation process of (a)-(h) insulating slope. （ａ）〜（ｅ）従来例の電子部品実装時における各工程を示した図。(A)-(e) The figure which showed each process at the time of the electronic component mounting of a prior art example.

以下、本発明の電子部品の実装方法を具体化した一実施形態について図１〜図４を参照して説明する。図１（ａ）は本実施形態の電子装置１０の平面構造を示す平面図であり、図１（ｂ）は図１（ａ）に示す１ｂ−１ｂ線に沿った断面構造を示す部分断面図である。   Hereinafter, an embodiment embodying the electronic component mounting method of the present invention will be described with reference to FIGS. FIG. 1A is a plan view showing a planar structure of the electronic device 10 of this embodiment, and FIG. 1B is a partial sectional view showing a sectional structure taken along line 1b-1b shown in FIG. It is.

図１（ａ），（ｂ）に示されるように、電子装置１０が具備する矩形板状の実装基板１１にはその最上層に絶縁層が設けられており、この絶縁層の上面である実装面１１ａには矩形状の第１電極パッド１３が同実装面１１ａの四辺に沿って配列されている。実装基板１１の最上層である絶縁層の構成材料としては、可撓性あるいは非可撓性の各種絶縁材料を用いることができる。可撓性を有する具体的な材料としては、ポリイミド系樹脂、エポキシ系樹脂、ポリエステル系樹脂、フェノール系樹脂、フッ素系樹脂などの合成樹脂を用いることが可能である。また非不可撓性を有する具体的な材料としては、低温焼結基材であるガラスセラミックの他、高温焼結基材や誘電体材料などを用いることが可能である。   As shown in FIGS. 1A and 1B, a rectangular plate-shaped mounting substrate 11 provided in the electronic device 10 is provided with an insulating layer as the uppermost layer, and the mounting is the upper surface of the insulating layer. On the surface 11a, rectangular first electrode pads 13 are arranged along the four sides of the mounting surface 11a. As a constituent material of the insulating layer that is the uppermost layer of the mounting substrate 11, various insulating materials that are flexible or inflexible can be used. As a specific material having flexibility, a synthetic resin such as a polyimide resin, an epoxy resin, a polyester resin, a phenol resin, or a fluorine resin can be used. Further, as a specific material having non-flexibility, it is possible to use a high-temperature sintered base material, a dielectric material, or the like, in addition to a glass ceramic that is a low-temperature sintered base material.

なお、上述する実装基板１１は、上記第１電極パッド１３の他、実装基板１１の実装面１１ａに各種配線を有する構成であってもよい。さらに、上述する実装基板１１は、各種配線がプリントされた複数の回路基板を下層に有する多層基板であってもよく、上記実装面１１ａに第１電極パッド１３が形成されているものであればよい。さらにまた、実装基板１１の第１電極パッド１３は、実装面１１ａの四辺に沿って配列されているが、例えば実装面１１ａの１辺にだけ形成される構成でもよい。   Note that the mounting substrate 11 described above may have various wirings on the mounting surface 11 a of the mounting substrate 11 in addition to the first electrode pad 13. Further, the mounting board 11 described above may be a multilayer board having a plurality of circuit boards on which various wirings are printed as a lower layer, as long as the first electrode pad 13 is formed on the mounting surface 11a. Good. Furthermore, the first electrode pads 13 of the mounting substrate 11 are arranged along the four sides of the mounting surface 11a, but may be formed only on one side of the mounting surface 11a, for example.

実装面１１ａには、上記複数の第１電極パッド１３に取り囲まれるように、電子部品としての矩形板状の半導体チップ１２が図示しない接着層を介して接合されている。半導体チップ１２の上面であるパッド形成面１２ａには、矩形状をなす複数の第２電極パッド１５が、実装基板１１の各第１電極パッド１３に対応するかたちで、半導体チップ１２の四辺に沿って配列されている。さらにパッド形成面１２ａには、第２電極パッド１５を囲うかたちで絶縁層が形成されている。第２電極パッド１５を囲う絶縁層は、無機絶縁材料や有機絶縁材料からなる薄膜であって、無機絶縁材料としては、ＳｉＯ２やＳｉＮなどを用いることが可能であり、有機絶縁材料としては、ポリイミド樹脂などを用いることが可能である。 A rectangular plate-like semiconductor chip 12 as an electronic component is bonded to the mounting surface 11a via an adhesive layer (not shown) so as to be surrounded by the plurality of first electrode pads 13. On the pad forming surface 12 a that is the upper surface of the semiconductor chip 12, a plurality of rectangular second electrode pads 15 correspond to the first electrode pads 13 of the mounting substrate 11, along the four sides of the semiconductor chip 12. Are arranged. Further, an insulating layer is formed on the pad forming surface 12 a so as to surround the second electrode pad 15. The insulating layer surrounding the second electrode pad 15 is a thin film made of an inorganic insulating material or an organic insulating material. As the inorganic insulating material, SiO 2 or SiN can be used. As the organic insulating material, A polyimide resin or the like can be used.

なお、上述する電子部品は、半導体チップ１２等の能動部品に限らず、抵抗器やコンデンサなどに代表されるような受動部品であってもよく、パッド形成面１２ａに第２電極パッド１５が形成されて、そのパッド形成面１２ａの反対側面を実装面１１ａに向けた実装、所謂フェイスアップ方式の実装が可能なものであればよい。さらに、半導体チップ１２の第２電極パッド１５は、パッド形成面１２ａの四辺に沿って配列されているが、実装基板１１の第１電極パッド１３と同様に、例えばパッド形成面１２ａの１辺にだけ第２電極パッド１５が形成される構成や第２電極パッド１５が１つだけ形成される構成であってもよい。   The electronic component described above is not limited to an active component such as the semiconductor chip 12, but may be a passive component such as a resistor or a capacitor. The second electrode pad 15 is formed on the pad forming surface 12a. In addition, it is only necessary that the side surface opposite to the pad forming surface 12a can be mounted on the mounting surface 11a, that is, so-called face-up mounting. Furthermore, the second electrode pads 15 of the semiconductor chip 12 are arranged along the four sides of the pad forming surface 12a. However, like the first electrode pads 13 of the mounting substrate 11, for example, on the one side of the pad forming surface 12a. Only the second electrode pad 15 may be formed, or only one second electrode pad 15 may be formed.

上述する実装面１１ａとパッド形成面１２ａとの間には、半導体チップ１２の厚さに相当する段差が存在する。半導体チップ１２の外周には、実装面１１ａとパッド形成面１２ａとをつなぐ連続面を有した絶縁性スロープ１７（以下、単にスロープという。）が設けられている。スロープ１７は半導体チップ１２から離間するにつれてその膜厚が薄くなるかたちに構成されており、またスロープ１７の表面である上記連続面は実装面１１ａとパッド形成面１２ａとの間の段差を緩和するかたちに構成されている。   A step corresponding to the thickness of the semiconductor chip 12 exists between the mounting surface 11a and the pad forming surface 12a. An insulating slope 17 (hereinafter simply referred to as a slope) having a continuous surface connecting the mounting surface 11a and the pad forming surface 12a is provided on the outer periphery of the semiconductor chip 12. The slope 17 is configured in such a manner that the film thickness decreases as the distance from the semiconductor chip 12 increases, and the continuous surface that is the surface of the slope 17 relaxes the step between the mounting surface 11a and the pad forming surface 12a. It is configured in a form.

このスロープ１７は、絶縁材料からなる構造単位（スロープ要素）が積み重なる態様で構成されている。詳述すると、図２（ａ），（ｂ）に示されるように、上記スロープ１７が設けられる空間には、実装面１１ａを構成する２つの独立な方向（行方向と列方向）及び半導体チップ１２の厚み方向（層方向）への所定距離の平行移動により不変な空間格子である３次元のパターン格子２０が規定されている。この３次元のパターン格子２０において上記スロープが占有する空間は、例えば実装面１１ａの面方向において３行ｎ列の単位格子２１で構成されており、また半導体チップ１２の厚み方向において１層〜３層の単位格子２１で構成されている。このパターン格子２０を構成する単位格子２１は、スロープ１７の構造単位であるスロープ要素が占有する空間である。つまり単位格子２１を占有する絶縁材料により構造単位であるスロープ要素が構成されており、このスロープ要素が積み重ねられる態様で上記スロープ１７が構成されている。なお図２では、パターン格子２０の構成を説明する便宜上、単位格子２１を十分に拡大して示している。   The slope 17 is configured such that structural units (slope elements) made of an insulating material are stacked. More specifically, as shown in FIGS. 2A and 2B, the space in which the slope 17 is provided has two independent directions (row direction and column direction) constituting the mounting surface 11a and a semiconductor chip. A three-dimensional pattern lattice 20 that is an invariant spatial lattice is defined by parallel movement of a predetermined distance in the thickness direction (layer direction). The space occupied by the slope in the three-dimensional pattern lattice 20 is composed of, for example, 3 × n unit lattices 21 in the surface direction of the mounting surface 11 a, and one layer to three in the thickness direction of the semiconductor chip 12. It consists of a unit cell 21 of layers. The unit cell 21 constituting the pattern lattice 20 is a space occupied by a slope element which is a structural unit of the slope 17. That is, the slope element which is a structural unit is comprised by the insulating material which occupies the unit cell 21, and the said slope 17 is comprised in the aspect by which this slope element is piled up. In FIG. 2, for convenience of explaining the configuration of the pattern lattice 20, the unit lattice 21 is shown sufficiently enlarged.

なおスロープ１７を構成する絶縁性材料としては、エポキシ系の熱硬化性樹脂やアクリル系の光硬化性樹脂、あるいはこれらを混合させたものを用いることが可能であるが、本実施形態ではスロープ１７を形成する際に加熱による実装基板１１や半導体チップ１２などへの熱的な影響を回避すべく、所定波長の紫外光を一定時間照射することにより硬化される光硬化性樹脂が用いられている。   The insulating material constituting the slope 17 may be an epoxy thermosetting resin, an acrylic photocurable resin, or a mixture thereof. In this embodiment, the slope 17 is used. In order to avoid thermal influence on the mounting substrate 11 and the semiconductor chip 12 due to heating when forming the substrate, a photo-curable resin that is cured by irradiating with ultraviolet light of a predetermined wavelength for a certain period of time is used. .

図１に示されるように、こうしたスロープ１７の表面には、第１電極パッド１３と第２電極パッド１５とを電気的に接続する金属配線１９が積層されている。上述したように実装面１１ａとパッド形成面１２ａとの間の段差がスロープ１７により緩和されているため、こうしたスロープ１７に積層された金属配線１９も、上記段差による屈曲が十分に抑えられたものとなっている。実装基板１１の第１電極パッド１３とそれらに対応する半導体チップ１２の各第２電極パッド１５とが段差による屈曲により機械的な信頼性が低下されることのない、すなわちスロープ１７を介して配置された機械的な信頼性の高い金属配線１９により接続されるようになる。   As shown in FIG. 1, a metal wiring 19 that electrically connects the first electrode pad 13 and the second electrode pad 15 is laminated on the surface of the slope 17. As described above, since the step between the mounting surface 11a and the pad forming surface 12a is relaxed by the slope 17, the metal wiring 19 laminated on the slope 17 is also sufficiently suppressed from bending due to the step. It has become. The first electrode pads 13 of the mounting substrate 11 and the respective second electrode pads 15 of the semiconductor chip 12 corresponding thereto are not lowered in mechanical reliability due to bending due to a step, that is, arranged via the slope 17. The connection is made by the metal wiring 19 having high mechanical reliability.

次に、上述した電子装置１０における半導体チップ１２の実装方法について図３及び図４を参照しながら説明する。図３は、半導体チップ１２の実装方法における各製造工程の流れを示すフローチャートである。図４（ａ）〜（ｈ）は、絶縁性スロープの形成工程を示した工程図である。   Next, a mounting method of the semiconductor chip 12 in the electronic device 10 described above will be described with reference to FIGS. FIG. 3 is a flowchart showing the flow of each manufacturing process in the mounting method of the semiconductor chip 12. FIGS. 4A to 4H are process diagrams showing a process of forming an insulating slope.

図３に示されるように、半導体チップ１２の実装方法においては、配置工程（ステップＳ１１）と、スロープ形成工程（ステップＳ１２）と、配線形成工程（ステップＳ１３）とが順に実施される。   As shown in FIG. 3, in the mounting method of the semiconductor chip 12, an arrangement process (step S <b> 11), a slope formation process (step S <b> 12), and a wiring formation process (step S <b> 13) are sequentially performed.

配置工程は、実装基板１１の実装面１１ａに半導体チップ１２を配置する工程である。この工程ではまず、電子装置１０の設計ルールに基づき、実装面１１ａの所定範囲に図示しない接着層が形成される。次いでチップマウンターなどの搬送装置によって半導体チップ１２が接着層上に載置されて、実装基板１１と半導体チップ１２とが接着層を介して接合される。   The placement step is a step of placing the semiconductor chip 12 on the mounting surface 11 a of the mounting substrate 11. In this step, first, an adhesive layer (not shown) is formed in a predetermined range of the mounting surface 11a based on the design rule of the electronic device 10. Next, the semiconductor chip 12 is placed on the adhesive layer by a transfer device such as a chip mounter, and the mounting substrate 11 and the semiconductor chip 12 are bonded via the adhesive layer.

スロープ形成工程は、インクジェット法を用いてスロープ１７を形成する工程である。本工程においては、図４に示されるように、液滴吐出ヘッド３０から液滴Ｄを吐出して硬化させたスロープ要素を積み重ねた積層体をパターン格子２０の１行目から順に形成することによりスロープ１７が形成される。   A slope formation process is a process of forming the slope 17 using the inkjet method. In this step, as shown in FIG. 4, a stacked body in which slope elements that are cured by ejecting droplets D from the droplet ejection head 30 are stacked is sequentially formed from the first row of the pattern lattice 20. A slope 17 is formed.

詳述すると、絶縁材料が溶媒中に分散した絶縁性インクからなる複数の液滴Ｄは、それ
が他の液滴Ｄから離間する態様で液滴吐出ヘッド３０から単位格子２１に吐出される。次いで単位格子２１内の液滴Ｄが孤立した状態のまま硬化されることにより、１つのスロープ要素が形成される。そして複数のスロープ要素が積み重ねられる態様で複数の液滴Ｄの吐出及び硬化が繰り返されることにより、スロープ１７が形成される。 More specifically, a plurality of droplets D made of an insulating ink in which an insulating material is dispersed in a solvent are ejected from the droplet ejection head 30 to the unit cell 21 in such a manner that they are separated from the other droplets D. Next, the droplet D in the unit cell 21 is cured while being isolated, so that one slope element is formed. And the slope 17 is formed by repeating discharge and hardening of the several droplet D in the aspect in which a several slope element is piled up.

この際、硬化する前の液滴Ｄが隣接する単位格子２１に存在すると、絶縁性インクの表面張力によって液滴Ｄ同士が合一するように流動して本来定着すべき位置から各液滴Ｄが流動してしまう。こうした状況の下で形成されるスロープ１７は、その位置や形状がスロープ１７を構成する液滴Ｄの流動によって本来形成されるべき位置や形状と異なるものとなってしまう。そこで、本実施形態の液滴吐出ヘッド３０は、着弾した液滴Ｄがそれぞれ孤立するように、パターン格子２０における同じ行の奇数列にのみ液滴Ｄが吐出される。（図４（ａ））。１行目の奇数列の単位格子２１に液滴Ｄが着弾すると、その着弾タイミングにあわせて紫外光３１が照射されて同液滴Ｄが硬化し、１行目の奇数列の単位格子２１にスロープ要素３２ａが形成される（図４（ｂ））。   At this time, if the droplet D before being cured exists in the adjacent unit cell 21, the droplets D flow from the position where the droplets D are united by the surface tension of the insulating ink, and each droplet D from the position to be originally fixed. Will flow. The position and shape of the slope 17 formed under such circumstances will be different from the position and shape that should originally be formed by the flow of the droplets D constituting the slope 17. Therefore, the droplet discharge head 30 of the present embodiment discharges the droplets D only to odd columns in the same row in the pattern grid 20 so that the landed droplets D are isolated from each other. (FIG. 4A). When the droplets D land on the odd-numbered unit cells 21 in the first row, the ultraviolet light 31 is irradiated in accordance with the landing timing, and the droplets D are cured, and the unit cells 21 in the odd-numbered columns in the first row are cured. A slope element 32a is formed (FIG. 4B).

続いて、液滴吐出ヘッド３０が同じ位置で再び駆動することにより、先行して形成されたスロープ要素３２ａの上面に他の液滴Ｄが着弾する（図４（ｃ））。そしてこの液滴Ｄの着弾タイミングに合わせて再び紫外光３１が照射されることにより、スロープ要素３２ａに積み重ねられたかたちで、１行目の奇数列の単位格子２１に２層目のスロープ要素３２ｂが形成される（図４（ｄ））。さらに液滴吐出ヘッド３０が同じ位置で再び駆動することにより、先行して形成されたスロープ要素３２ｂの上面に他の液滴Ｄが着弾する。そして液滴Ｄの着弾タイミングに合わせて紫外光３１が照射されることにより、スロープ要素３２ａ，３２ｂにさらに積み重ねたかたちで３層目のスロープ要素３２ｃが形成される。こうして１行目の奇数列には、スロープ１７の膜厚に応じた３つのスロープ要素からなる積層体３２が形成される（図４（ｅ））。   Subsequently, when the droplet discharge head 30 is driven again at the same position, another droplet D is landed on the upper surface of the previously formed slope element 32a (FIG. 4C). By irradiating the ultraviolet light 31 again in accordance with the landing timing of the droplet D, the slope element 32b of the second layer is formed on the unit cell 21 of the odd-numbered column of the first row in the form of being stacked on the slope element 32a. Is formed (FIG. 4D). Furthermore, when the droplet discharge head 30 is driven again at the same position, another droplet D lands on the upper surface of the previously formed slope element 32b. Then, by irradiating the ultraviolet light 31 in accordance with the landing timing of the droplet D, a third-layer slope element 32c is formed in a state of being further stacked on the slope elements 32a and 32b. In this way, in the odd-numbered column of the first row, a stacked body 32 composed of three slope elements corresponding to the film thickness of the slope 17 is formed (FIG. 4E).

上述した各スロープ要素３２ａ〜３２ｃは、孤立するように奇数列にのみ吐出された液滴Ｄをその吐出毎に硬化させていることから、着弾した液滴Ｄの合一や着弾した液滴Ｄ自体の濡れ広がりが抑制されることとなり、その形成位置や形状の再現性が向上されることになる。そして、こうしたスロープ要素３２ａ〜３２ｃを積み重ねて形成される積層体３２においても、その形成位置や形状の再現性が向上されることになる。   Since each of the slope elements 32a to 32c described above hardens the droplets D ejected only in odd rows so as to be isolated each time they are ejected, the landing droplets D are coalesced or the droplets D are landed. As a result, the spread of wetting is suppressed, and the reproducibility of the formation position and shape is improved. And also in the laminated body 32 formed by stacking such slope elements 32a-32c, the reproducibility of the formation position and shape is improved.

続いて、実装基板１１に対して液滴吐出ヘッド３０をパターン格子２０の行方向に沿って移動させて、同様の手順でパターン格子２０における１行目の偶数列に３層からなる積層体３２を形成し、１行目の単位格子２１の全領域に積層体３２が形成される。   Subsequently, the droplet discharge head 30 is moved along the row direction of the pattern grid 20 with respect to the mounting substrate 11, and the laminate 32 composed of three layers in the even-numbered columns of the first row in the pattern grid 20 in the same procedure. The stacked body 32 is formed in the entire region of the unit cell 21 in the first row.

本工程では次に、１行目よりも膜厚の小さい行である２行目に積層体３３が形成される。まず、液滴吐出ヘッド３０を実装基板１１に対して移動させて２行目の直上に位置させる。液滴吐出ヘッド３０が２行目の直上に位置すると、液滴吐出ヘッド３０が駆動されて、パターン格子２０における２行目の奇数列の単位格子２１に向かって液滴Ｄが吐出される。そして液滴Ｄの着弾タイミングに合わせて紫外光３１が照射されることにより、２行目の奇数列に１層目のスロープ要素３３ａが形成される（図４（ｆ））。   Next, in this step, the stacked body 33 is formed in the second row, which is a row having a smaller film thickness than the first row. First, the droplet discharge head 30 is moved with respect to the mounting substrate 11 and is positioned immediately above the second row. When the droplet discharge head 30 is positioned immediately above the second row, the droplet discharge head 30 is driven, and the droplet D is discharged toward the unit lattice 21 of the odd-numbered column of the second row in the pattern lattice 20. Then, by irradiating the ultraviolet light 31 in accordance with the landing timing of the droplet D, a first-layer slope element 33a is formed in the odd-numbered column of the second row (FIG. 4 (f)).

続いて、液滴吐出ヘッド３０が再び同じ位置で駆動することにより、先行して形成されたスロープ要素３３ａの上面に他の液滴Ｄが着弾する。そしてこの液滴Ｄの着弾タイミングに合わせて紫外光３１が照射されることにより、スロープ要素３２ａに積み重ねられたかたちで２層目のスロープ要素３３ｂが形成される（図４（ｇ））。こうして２行目の奇数列に、スロープ１７の膜厚に応じた積層体３３が形成される。そして、実装基板１１に対して液滴吐出ヘッド３０をパターン格子２０の行方向に沿って移動させて、同様の手順でパターン格子２０における２行目の偶数列に２層からなる積層体３３を形成し、２行目
の全領域に積層体３３が形成される。 Subsequently, when the droplet discharge head 30 is driven again at the same position, another droplet D lands on the upper surface of the previously formed slope element 33a. Then, by irradiating with the ultraviolet light 31 in accordance with the landing timing of the droplet D, a second-layer slope element 33b is formed in a form stacked on the slope element 32a (FIG. 4G). Thus, the stacked body 33 corresponding to the film thickness of the slope 17 is formed in the odd-numbered columns of the second row. Then, the droplet discharge head 30 is moved along the row direction of the pattern lattice 20 with respect to the mounting substrate 11, and the stacked body 33 composed of two layers is formed in the even-numbered columns of the second row in the pattern lattice 20 in the same procedure. The stacked body 33 is formed in the entire region of the second row.

上述した各スロープ要素３３ａ，３３ｂは、孤立するように吐出された液滴Ｄをその吐出毎に硬化させていることから、着弾した液滴Ｄの合一や着弾した液滴Ｄ自体の濡れ広がりが抑制されることとなり、その形成位置や形状の再現性が向上されることになる。そして、こうしたスロープ要素３３ａ，３３ｂを積み重ねて形成される積層体３３においても、その形成位置や形状の再現性が向上されることになる。   Since each of the slope elements 33a and 33b described above hardens the droplets D ejected so as to be isolated each time they are ejected, the landing droplets D are united and the landing droplets D themselves are wet and spread. Is suppressed, and the reproducibility of the formation position and shape is improved. And also in the laminated body 33 formed by stacking such slope elements 33a and 33b, the reproducibility of the formation position and shape is improved.

本工程では最後に、最も膜厚の小さい行である３行目の積層体３４が形成される。まず、液滴吐出ヘッド３０を実装基板１１に対して移動させて３行目の直上に位置させる。液滴吐出ヘッド３０が３行目の直上に位置すると、液滴吐出ヘッド３０が駆動して、パターン格子２０における３行目の奇数列の単位格子２１に向かって液滴Ｄが吐出される。そしてこの液滴Ｄの着弾タイミングに合わせて紫外光３１が照射されることにより、スロープ要素３４ａが形成される（図４（ｈ））。こうして３行目の奇数列に、スロープ１７の膜厚に応じた積層体３４が形成される。そして、実装基板１１に対して液滴吐出ヘッド３０をパターン格子２０の行方向に沿って移動させて、同様の手順でパターン格子２０における３行目の偶数列に積層体３４を形成し、３行目の全領域に積層体３４が形成される。   In this step, finally, the stacked body 34 in the third row, which is the row with the smallest film thickness, is formed. First, the droplet discharge head 30 is moved with respect to the mounting substrate 11 and is positioned immediately above the third row. When the droplet discharge head 30 is positioned immediately above the third row, the droplet discharge head 30 is driven to discharge the droplet D toward the unit cell 21 in the odd-numbered column of the third row in the pattern lattice 20. Then, by irradiating the ultraviolet light 31 in accordance with the landing timing of the droplet D, a slope element 34a is formed (FIG. 4 (h)). In this way, the stacked body 34 corresponding to the film thickness of the slope 17 is formed in the odd-numbered column in the third row. Then, the droplet discharge head 30 is moved along the row direction of the pattern grid 20 with respect to the mounting substrate 11, and the stacked body 34 is formed in the even-numbered columns of the third row in the pattern grid 20 by the same procedure. A stacked body 34 is formed in the entire region of the row.

上述したスロープ要素３４ａも、孤立するように吐出された液滴Ｄをその吐出毎に硬化させていることから、着弾した液滴Ｄの合一や着弾した液滴Ｄ自体の濡れ広がりが抑制されることとなり、その形成位置や形状の再現性が向上されることになる。そして、こうしたスロープ要素３４ａからなる積層体３４においても、その形成位置や形状の再現性が向上されることになる。   Since the above-described slope element 34a also hardens the droplet D ejected so as to be isolated each time it is ejected, coalescence of the landed droplet D and wetting and spreading of the landed droplet D itself are suppressed. As a result, the reproducibility of the formation position and shape is improved. And also in the laminated body 34 which consists of such a slope element 34a, the reproducibility of the formation position and shape will be improved.

こうしてパターン格子２０の１〜３行目に形成された積層体３２〜３４によりスロープ１７が形成される。各積層体３２〜３４は、上述したように、それぞれ孤立した状態となるように吐出された液滴Ｄをその吐出毎に硬化させたスロープ要素を積み重ねたものであることから、その形成位置や形状の再現性が向上される。そして、こうした再現性の高い積層体３２〜３４から構成されるスロープ１７もその形成位置や形状の再現性が向上することとなり、実装面１１ａの面方向及びスロープ１７の厚み方向における加工精度が向上される。そのため、たとえ急峻な絶縁性スロープであっても、絶縁性スロープ全体としての形状を崩すことなく、所望の形状に安定して形成することが可能となる。   Thus, the slope 17 is formed by the stacked bodies 32 to 34 formed in the first to third rows of the pattern lattice 20. As described above, each of the stacked bodies 32 to 34 is formed by stacking slope elements obtained by curing the droplets D ejected so as to be in an isolated state for each ejection. Shape reproducibility is improved. And the slope 17 comprised from these highly reproducible laminated bodies 32-34 will also improve the reproducibility of the formation position and shape, and the processing precision in the surface direction of the mounting surface 11a and the thickness direction of the slope 17 will improve. Is done. Therefore, even a steep insulating slope can be stably formed in a desired shape without breaking the shape of the entire insulating slope.

また、スロープ１７を半導体チップ１２に近い位置の１行目から順に積層体を形成することにより、先行して形成されたスロープ要素が半導体チップ１２の側面に直接あるいは間接的に支持されることとなる。それゆえこうしたスロープ要素が積み重ねられた積層体３２〜３４の崩れがそうした支持態様によって抑制されることになり、スロープ１７を所望の形状に安定して形成することが可能となる。一方、半導体チップ１２から遠い位置（パターン格子２０の３行目）から積層体を形成した場合には、先行して形成されたスロープ要素が後続するスロープ要素の形成に対して光学的な障害となってしまい、後続する液滴Ｄへの紫外光３１の照射を阻害する虞がある。これに対し本実施形態では、パターン格子２０において、半導体チップ１２の近い位置の１行目から順にスロープ要素が形成されることから、先行して形成されたスロープ要素が光学的な障害になることが回避され、紫外光３１の照射に関わる問題が軽減されることにもなる。   In addition, by forming the stacked body in order from the first row at a position close to the semiconductor chip 12, the slope element formed in advance is supported directly or indirectly on the side surface of the semiconductor chip 12. Become. Therefore, the collapse of the stacked bodies 32 to 34 in which such slope elements are stacked is suppressed by such a support mode, and the slope 17 can be stably formed in a desired shape. On the other hand, when the laminated body is formed from a position far from the semiconductor chip 12 (the third row of the pattern lattice 20), the slope element formed in advance is an optical obstacle to the formation of the subsequent slope element. As a result, there is a possibility that the irradiation of the ultraviolet light 31 to the subsequent droplet D may be hindered. On the other hand, in the present embodiment, in the pattern grating 20, since the slope elements are formed in order from the first row near the semiconductor chip 12, the previously formed slope elements become an optical obstacle. Can be avoided, and problems associated with irradiation of the ultraviolet light 31 can be reduced.

配線形成工程（ステップＳ１３）は、実装面１１ａの第１電極パッド１３とパッド形成面１２ａの第２電極パッド１５とを電気的に接続する金属配線１９を形成する工程である。すなわち、スロープ形成工程において形成されたスロープ１７の表面に金属配線１９を形成する工程である。金属配線１９は、導電性材料としての導電性微粒子の分散系からなる導電性インクを用いたインクジェット法によって形成される。本実施形態では、実装面
１１ａの第１電極パッド１３の上面からスロープ１７上を通りパッド形成面１２ａの第２電極パッド１５までの各位置に導電性インクからなる液滴が吐出され連続的に配置される。次いで、配置された液滴に加熱処理が施されることにより分散媒の蒸発と導電性微粒子の焼成とが進行して金属配線１９が形成される。 The wiring formation step (step S13) is a step of forming a metal wiring 19 that electrically connects the first electrode pad 13 on the mounting surface 11a and the second electrode pad 15 on the pad formation surface 12a. That is, it is a step of forming the metal wiring 19 on the surface of the slope 17 formed in the slope forming step. The metal wiring 19 is formed by an ink jet method using a conductive ink composed of a dispersion system of conductive fine particles as a conductive material. In the present embodiment, droplets made of conductive ink are continuously discharged from the upper surface of the first electrode pad 13 on the mounting surface 11a to the second electrode pad 15 on the pad forming surface 12a through the slope 17 and continuously. Be placed. Next, the disposed droplets are subjected to heat treatment, whereby the dispersion medium evaporates and the conductive fine particles are fired to form the metal wiring 19.

本実施形態では、スロープ１７の形状が安定していることから、そこに配置される導電性インクの液滴が不用意に移動されることが抑制されるようになり、配線のパターンが安定的に描画されるようにもなる。描画される配線のパターンが安定していることから、形成される配線の膜厚のばらつきが抑制されて、機械的強度の不足や断線などが低減されることになる。すなわち、金属配線１９の機械的な安定性とともに、電気的な安定性も向上されることになる。   In the present embodiment, since the shape of the slope 17 is stable, the conductive ink droplets disposed thereon are prevented from being inadvertently moved, and the wiring pattern is stable. Will also be drawn. Since the pattern of the wiring to be drawn is stable, variations in the film thickness of the wiring to be formed are suppressed, and insufficient mechanical strength, disconnection, and the like are reduced. That is, the electrical stability as well as the mechanical stability of the metal wiring 19 is improved.

なお、導電性インクの導電性微粒子は、数ｎｍ〜数十ｎｍの粒径を有する微粒子であり、例えば銀、金、銅、白金、パラジウム、ロジウム、オスミウム、ルテニウム、イリジウム、鉄、錫、コバルト、ニッケル、クロム、チタン、タンタル、タングステン、インジウム等の金属、あるいはこれらの合金を用いることができる。   The conductive fine particles of the conductive ink are fine particles having a particle diameter of several nanometers to several tens of nanometers, for example, silver, gold, copper, platinum, palladium, rhodium, osmium, ruthenium, iridium, iron, tin, cobalt. Further, metals such as nickel, chromium, titanium, tantalum, tungsten, and indium, or alloys thereof can be used.

一方、分散媒は、導電性微粒子を分散できるもので凝集を起こさないものであれば特に限定されない。例えば、水の他に、メタノール、エタノール、プロパノール、ブタノールなどのアルコール類、ｎ−ヘプタン、ｎ−オクタン、デカン、ドデカン、テトラデカン、トルエン、キシレン、シメン、デュレン、インデン、ジペンテン、テトラヒドロナフタレン、デカヒドロナフタレン、シクロヘキシルベンゼンなどの炭化水素系化合物、またエチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールメチルエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールメチルエチルエーテル、１，２−ジメトキシエタン、ビス（２−メトキシエチル）エーテル、ｐ−ジオキサンなどのエーテル系化合物、さらにプロピレンカーボネート、縺|ブチロラクトン、Ｎ−メチル−２−ピロリドン、ジメチルホルムアミド、ジメチルスルホキシド、シクロヘキサノンなどの極性化合物を例示できる。これらのうち、導電性微粒子の分散性と分散液の安定性、また液滴吐出法への適用の容易さの点で、水、アルコール類、炭化水素系化合物、エーテル系化合物が好ましく、より好ましい分散媒としては、水、炭化水素系化合物を挙げることができる。   On the other hand, the dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, Examples include polar compounds such as tyrolactone, N-methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, and cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferable and more preferable in terms of the dispersibility of the conductive fine particles, the stability of the dispersion, and the ease of application to the droplet discharge method. Examples of the dispersion medium include water and hydrocarbon compounds.

ちなみに、実装面１１ａとパッド形成面１２ａの各電極パッド同士を例えばワイヤボンディング法を用いて接続した場合には、半導体チップ１２及び実装基板１１が高温に加熱されたり、大きな機械的なストレスが局所的に加わったりする。そのため、ワイヤボンディング法を用いた場合には、実装基板１１及び半導体チップ１２に耐熱性や機械的なストレスへの耐久性が高い水準で要求される。しかし、本実施形態のように液滴吐出法を用いて金属配線１９を形成すれば、上述したような実装基板１１及び半導体チップ１２への要求を軽減することができ、これらの材質選定における自由度を拡大することもできる。   Incidentally, when the electrode pads on the mounting surface 11a and the pad forming surface 12a are connected to each other using, for example, a wire bonding method, the semiconductor chip 12 and the mounting substrate 11 are heated to a high temperature, or a large mechanical stress is locally applied. Or join. Therefore, when the wire bonding method is used, the mounting substrate 11 and the semiconductor chip 12 are required to have a high level of heat resistance and durability against mechanical stress. However, if the metal wiring 19 is formed by using the droplet discharge method as in the present embodiment, the requirements for the mounting substrate 11 and the semiconductor chip 12 as described above can be reduced, and the selection of these materials is free. The degree can also be expanded.

以上説明したように本実施形態の電子部品の実装方法によれば、以下のような効果を得ることができる。
（１）上記実施形態によれば、液滴Ｄを孤立するかたちで吐出し、その吐出毎に硬化させたスロープ要素を積み重ねることで積層体３２〜３４を形成し、これらの積層体３２〜３４でスロープ１７を構成した。こうすることにより、吐出された液滴Ｄの合一が抑制されて、スロープ要素の形成位置や形状の再現性が向上し、こうしたスロープ要素から形成される積層体３２〜３４の形成位置や形状もその再現性が向上される。そして、積層体３２〜３４から構成されるスロープ１７も、その形成位置や形状の再現性が向上されることとなり、所望の形状に安定して形成することが可能となる。 As described above, according to the electronic component mounting method of the present embodiment, the following effects can be obtained.
(1) According to the above embodiment, the droplets D are ejected in an isolated form, and the laminated bodies 32 to 34 are formed by stacking the slope elements cured for each ejection, and these laminated bodies 32 to 34 are stacked. A slope 17 was constructed. By doing so, coalescence of the discharged droplets D is suppressed, and the reproducibility of the formation position and shape of the slope elements is improved, and the formation positions and shapes of the stacked bodies 32 to 34 formed from such slope elements. The reproducibility is improved. And the slope 17 comprised from the laminated bodies 32-34 will also improve the reproducibility of the formation position and shape, and it will become possible to form stably in a desired shape.

（２）上記実施形態のスロープ１７は、半導体チップ１２に近い位置からスロープ要素を積層した。こうすることにより、先行して形成されたスロープ要素が半導体チップ１２の側面に直接あるいは間接的に支持されることとなり、スロープ要素が積み重ねられた積層体３２〜３４の崩れを抑制することが可能となる。それゆえスロープ１７の形状を所望の形状に安定して形成することが可能となる。   (2) In the slope 17 of the above embodiment, slope elements are stacked from a position close to the semiconductor chip 12. By doing so, the slope element formed in advance is supported directly or indirectly on the side surface of the semiconductor chip 12, and the collapse of the stacked bodies 32 to 34 on which the slope elements are stacked can be suppressed. It becomes. Therefore, the shape of the slope 17 can be stably formed into a desired shape.

（３）また、半導体チップ１２に近い位置からスロープ要素を積層することにより、先行して形成されたスロープ要素が後続して形成されるスロープ要素の光学的な障害となることが回避されることとなり、光照射に関わる問題を低減することが可能である。   (3) Further, by stacking the slope elements from a position close to the semiconductor chip 12, it is avoided that the slope element formed in advance is an optical obstacle to the slope element formed subsequently. Thus, it is possible to reduce problems related to light irradiation.

（４）上記実施形態によれば、絶縁材料として紫外光硬化樹脂を用いてスロープ１７を形成した。こうすることにより、スロープ１７を形成する際の加熱処理が回避されることとなり、スロープ１７を形成する上での実装基板１１などへの熱的な影響を回避することが可能となる。   (4) According to the embodiment, the slope 17 is formed using an ultraviolet light curable resin as the insulating material. By doing so, the heat treatment at the time of forming the slope 17 is avoided, and it is possible to avoid the thermal influence on the mounting substrate 11 and the like when the slope 17 is formed.

なお、上記実施形態は以下のように変更して実施することもできる。
・上記実施形態では、半導体チップ１２に近い位置から順にスロープ要素を積み重ねてスロープ１７を形成した。これに限らず、液滴Ｄを孤立するように吐出するとともにその吐出毎に硬化させたスロープ要素を実装面１１ａの面方向において異なるタイミングで積み重ねてスロープ１７の加工精度を向上させる上では、各スロープ要素の形成順序を適宜変更してもよい。例えば半導体チップ１２に対して遠い位置（パターン格子２０の３行目）から順にスロープ要素を積み重ねてもよい。 In addition, the said embodiment can also be changed and implemented as follows.
In the above embodiment, the slope 17 is formed by stacking the slope elements in order from the position close to the semiconductor chip 12. In addition to this, in order to improve the processing accuracy of the slope 17 by stacking the slope elements that are ejected so as to be isolated and the slope elements cured for each ejection at different timings in the surface direction of the mounting surface 11a, You may change the formation order of a slope element suitably. For example, the slope elements may be stacked in order from a position far from the semiconductor chip 12 (the third row of the pattern lattice 20).

・また例えば、実装面１１ａに沿って敷き詰められた複数のスロープ要素からなる層に他のスロープ要素を積み重ねる態様が繰り返されることによりスロープ１７を形成してもよい。つまり実装面１１ａに沿って隣接するスロープ要素を異なるタイミングで積み重ねる態様であれば、半導体チップ１２に近い位置から順にスロープ要素を積み重ねることなく、パターン格子２０の１層目から順にスロープ要素を敷き詰める態様であってもよい。こうした構成であれば、先行して積み重ねられたスロープ要素が実装面１１ａの面方向で隣接する他のスロープ要素により支持されることになる。それゆえ積み重ねられたスロープ要素の崩れがそうした支持態様によって抑制されることになる。こうした構成によれば、スロープ１７の加工精度の向上が確実に得られる。   In addition, for example, the slope 17 may be formed by repeating a mode in which other slope elements are stacked on a layer composed of a plurality of slope elements spread along the mounting surface 11a. In other words, if the slope elements adjacent to each other along the mounting surface 11a are stacked at different timings, the slope elements are spread in order from the first layer of the pattern lattice 20 without sequentially stacking the slope elements from the position close to the semiconductor chip 12. It may be. With such a configuration, the slope elements stacked in advance are supported by other slope elements adjacent in the surface direction of the mounting surface 11a. Therefore, the collapse of the stacked slope elements is suppressed by such a support mode. According to such a configuration, the processing accuracy of the slope 17 can be reliably improved.

・上記実施形態では、液滴Ｄが吐出される段差に対してとくに表面処理を行わなかったが、例えば液滴Ｄの接触角を制御するような表面処理を行ってもよい。   In the above embodiment, the surface treatment is not particularly performed on the step where the droplet D is ejected. However, for example, a surface treatment that controls the contact angle of the droplet D may be performed.

Ｄ…液滴、Ｌ…紫外線、Ｐ…第２電極パッド、ＢＰ…第１電極パッド、１０…電子装置、１１…実装基板、１１ａ…実装面、１２…半導体チップ、１２ａ…パッド形成面、１３…第１電極パッド、１５…第２電極パッド、１７…絶縁性スロープ、１９…金属配線、２０…パターン格子、２１…単位格子、３０…液滴吐出ヘッド、３１…紫外光、３２…積層体、３２ａ，３２ｂ，３２ｃ…スロープ要素、３３…積層体、３３ａ，３３ｂ…スロープ要素、３４…積層体、３４ａ…スロープ要素、４１…基板、４１ａ…実装面、４２…電子部品、４２ａ…パッド形成面、４３…撥液層、４８…配線、５０Ｄ…絶縁性スロープ、５０Ｌ…液層。   D ... droplet, L ... ultraviolet light, P ... second electrode pad, BP ... first electrode pad, 10 ... electronic device, 11 ... mounting substrate, 11a ... mounting surface, 12 ... semiconductor chip, 12a ... pad forming surface, 13 DESCRIPTION OF SYMBOLS 1st electrode pad, 15 ... 2nd electrode pad, 17 ... Insulating slope, 19 ... Metal wiring, 20 ... Pattern lattice, 21 ... Unit lattice, 30 ... Droplet discharge head, 31 ... Ultraviolet light, 32 ... Laminate 32a, 32b, 32c ... slope element, 33 ... laminated body, 33a, 33b ... slope element, 34 ... laminated body, 34a ... slope element, 41 ... substrate, 41a ... mounting surface, 42 ... electronic component, 42a ... pad formation Surface, 43 ... liquid repellent layer, 48 ... wiring, 50D ... insulating slope, 50L ... liquid layer.

Claims (5)

実装基板の実装面と該実装面に配置された電子部品とにより形成された段差に該段差を緩和する絶縁性スロープを形成して前記電子部品を前記実装面に実装する電子部品の実装方法において、
絶縁性インクからなる液滴を吐出してその液滴を孤立した状態で硬化することにより形成するスロープ要素を、前記実装面の面方向に敷き詰めて、かつ、前記絶縁性スロープの厚み方向に積み重ねる態様で、前記液滴の吐出と硬化とを繰り返し、
前記スロープ要素を積み重ねるときには、前記実装面に沿って隣接する前記スロープ要素を異なるタイミングで積み重ねることにより前記絶縁性スロープを形成する
ことを特徴とする電子部品の実装方法。 In an electronic component mounting method, an insulating slope that relaxes the step is formed at a step formed by a mounting surface of a mounting substrate and an electronic component disposed on the mounting surface, and the electronic component is mounted on the mounting surface. ,
Slope elements formed by discharging droplets made of insulating ink and curing the droplets in an isolated state are spread in the surface direction of the mounting surface and stacked in the thickness direction of the insulating slope. In an aspect, repeating the ejection and curing of the droplets,
When stacking the slope elements, the insulating slope is formed by stacking the slope elements adjacent along the mounting surface at different timings. 前記電子部品に近い位置から順に前記スロープ要素を積み重ねる
ことを特徴とする請求項１に記載の電子部品の実装方法。 The electronic component mounting method according to claim 1, wherein the slope elements are stacked in order from a position close to the electronic component. 実装面に沿って敷き詰められた複数のスロープ要素からなる層に他のスロープ要素を積み重ねる態様が繰り返されることにより前記絶縁性スロープを形成する
ことを特徴とする請求項１に記載の電子部品の実装方法。 2. The electronic component mounting according to claim 1, wherein the insulating slope is formed by repeating a mode in which another slope element is stacked on a layer composed of a plurality of slope elements spread along a mounting surface. Method. 前記絶縁性インクが光硬化性樹脂からなる
ことを特徴とする請求項１〜３のいずれか一項に記載の電子部品の実装方法。 The said insulating ink consists of photocurable resin. The mounting method of the electronic component as described in any one of Claims 1-3 characterized by the above-mentioned. 導電性インクからなる液滴を前記絶縁性スロープの表面に吐出して前記実装基板の電極パッドと前記電子部品の電極パッドとを結ぶ配線を前記スロープの表面に形成する
ことを特徴とする請求項１〜４のいずれか一項に記載の電子部品の実装方法。 The liquid droplets made of conductive ink are ejected onto the surface of the insulating slope to form a wiring connecting the electrode pad of the mounting substrate and the electrode pad of the electronic component on the surface of the slope. The mounting method of the electronic component as described in any one of 1-4.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113380790A (en) * 2020-05-05 2021-09-10 台湾积体电路制造股份有限公司 Semiconductor device structure and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113380790A (en) * 2020-05-05 2021-09-10 台湾积体电路制造股份有限公司 Semiconductor device structure and method for manufacturing the same

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