JP2010210786A - Electrooptical device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve a high quality display image by forming a capacitor for reducing luminance unevenness in an efficient layout in an electrooptical device. <P>SOLUTION: The electrooptical device is provided with on a substrate (10): a pixel electrode (9a) arranged for each pixel; a capacitor electrode (71) disposed facing the lower layer side of the pixel electrode via a first dielectric film (72) for adding holding capacity to the pixel electrode in the pixel area (10a); a first conductive layer (500) formed of the same film as the capacitor electrode that constitutes one signal line to supply an image signal to the pixel electrode in the peripheral area (10b); and a second conductive layer (600) disposed facing the upper layer side of the first conductive layer via a second dielectric film (700), and formed of the same film as the pixel electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device and an electronic apparatus such as an electronic paper including the electro-optical device.

  In this type of electro-optical device, a pixel electrode, a scanning line for selectively driving the pixel electrode, a data line, and a TFT (Thin Film Transistor) as a pixel switching element are provided on a substrate. Thus, the active matrix driving is possible. In the active matrix driving, the operation of the TFT is controlled by supplying a scanning signal to the scanning line, and image display is performed by sequentially supplying the image signal to the data line at a timing when the TFT is turned on. Realized.

  Here, between the adjacent data lines to which the image signals are respectively supplied, for example, image signals that are serially / parallel-developed simultaneously by pushdown (that is, voltage drop of the image signal potential) due to parasitic capacitance. There is a problem that luminance unevenness occurs at the boundary between driven blocks. With respect to this problem, Patent Document 1 discloses a technique of providing a capacitor on a data line.

Japanese Patent Laid-Open No. 2004-125887

  However, if a capacitor is added as in Patent Document 1, the laminated structure on the substrate becomes complicated, and it becomes difficult to meet the demand for higher definition required for electro-optical devices such as liquid crystal devices. There is a problem. On the other hand, a storage capacitor may be provided between the pixel switching TFT and the pixel electrode for the purpose of increasing the contrast of the display image. Then, the laminated structure on the substrate becomes more complicated, and the above problem becomes more serious.

The present invention has been made in view of the above problems. For example, a high-quality image can be displayed by forming a capacitor with an efficient layout to reduce luminance unevenness generated at the boundary between adjacent blocks. It is an object to provide an electro-optical device and an electronic apparatus including such an electro-optical device.

  In order to solve the above problems, an electro-optical device according to the present invention faces a pixel electrode arranged for each pixel in a pixel region on a substrate and a lower layer side of the pixel electrode through a first dielectric film. A capacitor electrode for adding a storage capacitor to the pixel electrode, and a peripheral region located around the pixel region, and formed of the same film as the capacitor electrode. A first conductive layer constituting one signal line used for supplying an image signal to the electrode, and an upper layer side of the first conductive layer so as to face each other with a second dielectric film interposed therebetween; And a second conductive layer formed of the same film as the electrode.

  In the electro-optical device of the present invention, electronic elements such as wirings such as scanning lines and data lines and pixel switching transistors are stacked on the substrate as needed while being insulated from each other via an insulating film. Thus, a circuit for driving the pixel electrode is configured, and the pixel electrode is disposed on the upper layer side. During the operation of the electro-optical device, for example, the switching operation of the pixel switching TFT electrically connected to the pixel electrode is controlled through the scanning line, and an image signal is supplied through the data line. A voltage corresponding to the image signal is applied to the pixel electrode via the. As a result, it is possible to display an image in a pixel region (or also referred to as an “image display region” or a “pixel array region”) in which a plurality of pixel electrodes are arranged.

  The capacitor electrode is provided on the lower layer side of the pixel electrode so as to oppose the first dielectric film, thereby forming a storage capacitor. That is, the pixel electrode in the present invention has a function as an original pixel electrode for controlling the alignment state of liquid crystal molecules such as liquid crystal, for example, and also has a storage capacitor (or “storage capacitor” and “addition capacitor”). Are formed so as to function as one of the pair of capacitor electrodes. By forming the storage capacitor in this way, it is possible to improve the image quality by enhancing the retention characteristic of the drive voltage and simplify the laminated structure on the substrate, so that the manufacturing cost of the electro-optical device can be reduced. It can contribute to high definition.

  When viewed in plan on the substrate, for example, a drive circuit for driving a pixel switching TFT disposed in the pixel region and a drive voltage corresponding to an image signal are supplied to the pixel electrode around the pixel region. A peripheral region for arranging a voltage supply circuit and the like is provided. The electro-optical device according to the present invention is provided with a second capacitor electrode and a conductive layer described below in the peripheral region.

  The first conductive layer is disposed in the peripheral region and is formed from the same film as the capacitor electrode formed in the pixel region. Here, the “same film” means films formed on the same occasion in the manufacturing process of the electro-optical device, and are the same kind of film. That is, the second capacitor electrode in the peripheral region is formed on the same occasion as the first capacitor electrode in the pixel region in the manufacturing process. Further, in the present invention, “formed from the same film” does not mean that it is continuous as a single film, but is basically a part of the same film that is separated from each other. That is enough. That is, the first conductive layer in the peripheral region and the capacitor electrode in the pixel region are formed on the same occasion, but may be separated from each other. Thereby, since the capacitive electrode and the first conductive layer can be formed by a specific process in the manufacturing process, the manufacturing cost can be reduced and the layout in the stacked structure on the substrate can be simplified or made more efficient. it can.

  Such a first conductive layer constitutes one signal line that is directly used to supply an image signal to the pixel electrode, such as a data line or an image signal line that becomes a conductive path of the image signal. Alternatively, for example, one signal line that is used indirectly to supply an image signal to a pixel electrode, such as for operating a drive circuit that supplies an image signal or a part of the drive circuit, is configured. May be.

  The second conductive layer is provided in the peripheral region so as to face the upper layer side of the first conductive layer via the second dielectric film. That is, the second conductive layer forms a capacitor by sandwiching the second dielectric film between the second conductive layer and the first conductive layer formed on the lower layer side. By connecting the capacitor thus provided directly or indirectly to the data line, pushdown (i.e., due to parasitic capacitance generated between adjacent data lines to which image signals are respectively supplied (that is, The occurrence of uneven brightness at the boundary between the blocks due to the voltage drop of the image signal potential) can be suppressed. The term “block” as used herein typically means a block that is simultaneously driven by an image signal that has been serially or parallel-developed or phase-expanded. It may mean an area corresponding to a series when supplied.

  The second conductive layer formed in the peripheral region is formed of the same film as the pixel electrode formed in the pixel region. Here, since the pixel electrode in the pixel region is formed in an island shape for each pixel due to the property of applying a driving voltage for each pixel, the second conductive layer is continuously formed as one film with the pixel electrode. Instead of being formed, they are separated from each other. By forming the second conductive layer in this manner, the second conductive layer and the pixel electrode can be formed by a specific process in the manufacturing process, so that the manufacturing cost can be reduced and the layout in the stacked structure on the substrate can be achieved. Simplification or efficiency improvement.

As described above, according to the electro-optical device according to the present invention, it is possible to form the storage capacitor for improving the image quality in the pixel region and at the same time to suppress the push-down with the efficient layout in the peripheral region. Can be formed.
As a result, it is possible to realize an electro-optical device capable of displaying a high-quality image while reducing the manufacturing cost and increasing the definition of the electro-optical device.

  In one aspect of the electro-optical device according to the aspect of the invention, the first conductive layer is a conductive layer constituting one signal line that supplies an image signal to the pixel electrode, and the second conductive layer is the one signal. It is a conductive layer for adding wiring capacitance to the line.

  According to this aspect, one signal line for supplying an image signal (that is, a part of the image signal line, a part of the data line, etc.) is configured from the first conductive layer. A wiring capacitance is added to the single signal line by the second conductive layer. Accordingly, the first conductive layer and the second conductive layer in the peripheral region can stably supply an image signal with reduced noise.

  In another aspect of the electro-optical device of the present invention, the second conductive layer is held at a predetermined potential.

  According to this aspect, when the second conductive layer is held at a predetermined potential, the second conductive layer functions as an “electromagnetic shield” with respect to the wirings, elements, and the like disposed on the lower layer side. Here, the “predetermined potential” is, for example, a fixed potential or a predetermined potential, or a potential that is inverted at a predetermined cycle. In other words, even if there is a source of electromagnetic noise on the upper layer side of the second conductive layer, the wiring and elements arranged on the lower layer side of the second conductive layer may cause electromagnetic noise due to the second conductive layer. It is not affected by being blocked. In particular, when a wiring or the like to which an image signal is supplied is affected by electromagnetic noise, the waveform of the image signal or the like is disturbed, causing a reduction in the image quality of the display image. Therefore, in this aspect, the first conductive layer constituting one signal line to which the image signal is supplied is disposed on the lower layer side of the second conductive layer that functions as a shield electrode, so that the first conductive layer The influence of external electromagnetic noise can be reduced or prevented. As a result, since the first conductive layer can stably transmit an image signal as at least a part of one signal line, an electro-optical device capable of displaying a high-quality image can be realized.

  In the aspect in which the above-described second conductive layer is held at a predetermined potential, another signal line to which an image signal is supplied may be disposed on the lower layer side than the second conductive layer.

  According to this aspect, in addition to the one signal line configured to include the first conductive layer, the other signal line to which the image signal is separately supplied below the second conductive layer functioning as an electromagnetic shield. May be arranged. In this case, similarly to the first conductive layer, the other signal lines can block electromagnetic noise by the second conductive layer disposed on the upper layer side, so that the other signal lines disturb the image signal. And can be transmitted stably.

  In another aspect of the electro-optical device of the present invention, the first dielectric film is formed integrally with the second dielectric film.

  According to this aspect, the second capacitor electrode in the peripheral region and the first capacitor electrode in the pixel region, which are formed on the same occasion, are not separated from each other and are continuously formed as a single film. . For this reason, in the manufacturing process of the electro-optical device, the etching process for dividing the first dielectric film and the second dielectric film can be reduced by at least one process. Thus, it is possible to simplify or improve the layout in the laminated structure. Such a dielectric film may be a thermal oxide film that can be manufactured by the same thermal process, or may be a nitride film instead of or in addition to this.

  In another aspect of the electro-optical device of the present invention, the pixel electrode, the capacitor electrode, the first conductive layer, and the second conductive layer are all formed of a transparent conductive material.

  According to this aspect, since the pixel electrode and the capacitor electrode disposed in the pixel region are formed of a transparent material, even if the pixel electrode and the capacitor electrode are disposed in the opening region (that is, the region in the pixel through which the display light is transmitted) Does not block display light. Accordingly, since a storage capacitor including the pixel electrode and the capacitor electrode can be formed widely in the opening region, a storage capacitor having a larger capacitance value can be formed. As a result, the retention characteristics of the pixels can be improved, and an electro-optical device capable of displaying a higher quality image can be realized.

  On the other hand, the display light that contributes to image display is not transmitted in the peripheral region. Therefore, it is not always necessary to form the first conductive layer and the second conductive layer with a transparent conductive material. By forming the pixel electrode and the capacitor electrode with the same film, the manufacturing cost can be further reduced, and the layout in the stacked structure on the substrate can be simplified or made more efficient.

  In another aspect of the electro-optical device of the present invention, the transparent conductive material is ITO.

  According to this aspect, the pixel electrode, the first capacitor electrode, the second capacitor electrode, and the conductive layer are all formed of ITO (Indium Tin Oxide), which is an example of a transparent conductive material.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is provided, a projection display device capable of displaying a high-quality image, a television, a mobile phone, an electronic notebook, Various electronic devices such as a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. Further, as the electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

1 is a plan view of an electro-optical device according to an embodiment. It is HH 'sectional drawing of FIG. FIG. 3 is a block diagram illustrating a main electrical connection configuration of the electro-optical device according to the embodiment. It is a top view of a plurality of pixel parts in a liquid crystal device concerning this embodiment. It is AA 'sectional drawing of FIG. It is sectional drawing which shows the laminated structure of the capacity | capacitance part vicinity in the peripheral region of the liquid crystal device concerning this embodiment compared with the laminated structure in an image display area. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a driving circuit built-in type TFT active matrix driving type liquid crystal device, which is an example of the electro-optical device of the present invention, is taken as an example.

<Liquid crystal device>
First, a specific configuration of the liquid crystal device 1 according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view of the liquid crystal device 1 when the TFT array substrate 10 is viewed from the side of the counter substrate 20 together with each component formed thereon, and FIG. 2 is a schematic diagram of HH ′ of FIG. It is sectional drawing.

  1 and 2, the liquid crystal device 1 includes a TFT array substrate 10 and a counter substrate 20 disposed to face the TFT array substrate 10. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are interposed via a seal material 52 provided in a seal region located around the image display region 10 a. Are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  Of the peripheral region 10b located around the image display region 10a, the data line driving circuit 101 and the external circuit connection terminal 102 are provided on the TFT array substrate 10 in the region located outside the seal region where the sealing material 52 is disposed. It is provided along one side. The scanning line driving circuit 104 is provided along one of the two sides adjacent to the one side so as to be covered with the frame light shielding film 53. The scanning line driving circuit 104 may be provided along two sides adjacent to one side of the TFT array substrate 10 provided with the data line driving circuit 101 and the external circuit connection terminal 102. In this case, the two scanning line driving circuits 104 are electrically connected to each other by a plurality of wirings provided along the remaining one side of the TFT array substrate 10.

  Vertical conductive members 106 functioning as vertical conductive terminals between the two substrates are disposed at the four corners of the counter substrate 20. On the other hand, the TFT array substrate 10 is provided with vertical conduction terminals in a region facing these corner portions. Electrical conduction between the TFT array substrate 10 and the counter substrate 20 can be established by the vertical conduction terminals and the vertical conduction material 106.

  In FIG. 2, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the pixel switching TFT, the scanning line, the data line and the like are formed. On the other hand, on the counter substrate 20, in addition to the counter electrode 21, a lattice-shaped or striped light-shielding film 23 and an alignment film are formed on the uppermost layer portion. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. The liquid crystal device 1 may include a precharge circuit in addition to the sampling circuit.

  Next, an electrical connection configuration of the liquid crystal device 1 will be described with reference to FIG. FIG. 3 is a block diagram showing a main electrical connection configuration of the liquid crystal device 1.

  In FIG. 3, the liquid crystal device 1 includes a scanning line driving circuit 104, a data line driving circuit 101, a sampling circuit 200, an inspection circuit 701, an image signal line 171 and a capacitor CA in the peripheral region 10b of the TFT array substrate 10. .

  When the Y start pulse DY is input, the scanning line driving circuit 104 sequentially generates and outputs the scanning signals Y1,..., Ym at a timing based on the Y clock signal CLY and the inverted Y clock signal CLYinv. When the X start pulse DX is input, the data line driving circuit 101 sequentially generates and outputs sampling signals S1, S2,..., Sn at a timing based on the X clock signal CLX and the inverted X clock signal XCLXinv. . Each of the scanning line driving circuit 104 and the data line driving circuit 101 includes signal processing means such as a shift register including a plurality of TFTs formed in the peripheral area of the image display area 10 a on the TFT array substrate 10.

  The sampling circuit 200 includes a plurality of sampling switches 202 provided for each data line 6. The sampling switch 202 is composed of, for example, two TFTs electrically connected in series, and each of these TFTs is a P-channel type or an N-channel type single-channel TFT.

  The liquid crystal device 1 includes a data line 6a, a scanning line 3a, and a capacitor wiring 400 which are wired vertically and horizontally in an image display region 10a occupying the center of the TFT array substrate 10. The pixel portion 700 is provided in a matrix at positions where the data lines 6a and the scanning lines 3a correspond to each other. The pixel portion 700 includes a liquid crystal element 118, a pixel electrode 9a, a TFT 30 for switching control of the pixel electrode 9a, and a storage capacitor 70. The capacitor wiring 400 is electrically connected to a constant potential source (not shown). The potential of the power supply supplied to the capacitor wiring 400 is the counter electrode potential LCCOM supplied to the counter electrode 21 disposed to face the pixel electrode 9a. The capacitor wiring 400 is electrically connected to one electrode constituting the storage capacitor 70. The potential of the one electrode is maintained at the counter electrode potential LCCOM when the liquid crystal device 1 is driven. Since the storage capacitor 70 is added in parallel with the liquid crystal element 118, the voltage of the pixel electrode 9a is held for a time that is, for example, three orders of magnitude longer than the time when the source voltage is applied. As a result of the improvement, a high contrast ratio is realized.

  Each of the image signal lines 171 is electrically connected to the corresponding data line via the sampling circuit 200. N systems of image signals obtained by serial-parallel conversion of one system of input image data VID supplied from an external circuit are connected to the image signal line 171 via a sampling switch 202 that is switched on and off according to the sampling signal Si. Supplied to each. The N system image signals are generated, for example, by converting one system of input image data using signal conversion means such as an image signal supply circuit (not shown).

  In this embodiment, one series of serial image signals is serial-parallel converted or expanded into 12 series of parallel image signals. That is, twelve systems, that is, twelve phases (N = 12) of image signals VID1 to VID12 are generated from one series of image signals VID, and twelve image signal lines 171 are provided corresponding to the image signals in these twelve phases. ing. Further, in the image signal supply circuit (not shown), the voltages of the image signals VID1 to VID12 are inverted to the positive polarity and the negative polarity with respect to the counter electrode potential LCCOM that is the reference potential, and thus the polarity-inverted image. Signals VID1 to VID12 may be output.

  The inspection circuit 701 is electrically connected to the data line 6 a and supplies an inspection signal to each pixel unit 700.

  Capacitance section CA includes a plurality of capacitors C (i) (i = 1, 2,..., N × N, n is a natural number of 2 or more, and k = 1, 2,..., N). It has. The plurality of capacitors C (i) are electrically connected to the capacitor wiring 400 and each data line 6a, and the image signal potential supplied to the data line 6 when the sampling switch 202 is turned on is changed. A reduction (that is, push-down) is reduced or prevented as compared with the potential of an image signal that is supposed or planned to be supplied.

  The data line 6a in the image display area 10a is electrically connected to the signal line 500 in the peripheral area 10b on the inspection circuit 701 side. A capacitor C (i) is electrically connected to the signal line 500.

  Next, a specific stacked structure in the image display region 10a of the liquid crystal device 1 according to the present embodiment will be described in detail with reference to FIGS. FIG. 4 is a schematic diagram transparently showing the positional relationship between electrodes and wirings arranged for performing an electro-optical operation in the image display region 10a of the liquid crystal device 1 according to this embodiment. FIG. 5 is a cross-sectional view showing a laminated structure taken along the line AA ′ of FIG. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member to have a size that can be recognized on the drawing.

  In FIG. 4, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10 (the outline is indicated by a dotted line portion 9a ′), and data along the vertical and horizontal boundaries of the pixel electrode 9a is provided. Line 6a and scanning line 3a are provided. The data line 6a is made of, for example, a metal film such as an aluminum film or an alloy film, and the scanning line 3a is made of, for example, a conductive polysilicon film. The scanning line 3a is disposed so as to face the channel region 1a ′ of the semiconductor layer 1a constituting the TFT 30, and the scanning line 3a functions as a gate electrode. Each of the intersections of the scanning lines 3a and the data lines 6a is provided with a pixel switching TFT 30 in which the main line portion of the scanning line 3a is disposed opposite to the channel region 1a ′ as a gate electrode.

  The light shielding film 11 formed on the TFT array substrate 10 is formed wider than the semiconductor layer 1 a so as to include the semiconductor layer 1 a of the TFT 30 when viewed in plan on the TFT array substrate 10. Since the light shielding film 11 is disposed on the lower layer side than the semiconductor layer 1 a, the light shielding film 11 is formed wider than the semiconductor layer 1 a of the TFT 30 in this way, thereby reflecting the back surface reflection on the TFT array substrate 10 or a double plate type. The channel region 1a ′ of the TFT 30 can be almost or completely shielded from return light such as light emitted from another liquid crystal device by a projector or the like and penetrating through the composite optical system. As a result, the light leakage current in the TFT 30 is reduced during the operation of the liquid crystal device, the contrast ratio can be improved, and high-quality image display can be performed.

  As shown in FIG. 5, the light shielding film 11 is covered with a base insulating film 12, and the surface thereof is flattened. The underlying insulating film 12 also has a function of preventing changes in the characteristics of the TFT 30 for pixel switching due to roughness during the surface polishing of the TFT array substrate 10 and dirt remaining after cleaning.

  The TFT 30 includes a semiconductor layer 1a and a scanning line 3a that functions as a gate electrode. The semiconductor layer 1a is formed including a source region 1s, a channel region 1a ′, and a drain region 1d. Here, an LDD (Lightly Doped Drain) region may be formed at the interface between the channel region 1a ′ and the source region 1s or between the channel region 1a ′ and the drain region 1d.

  The scanning line 3a functioning as the gate electrode of the TFT 30 is disposed so as to face the region overlapping the channel region 1a ′ of the semiconductor layer 1a through the gate insulating film 2a when viewed in plan on the TFT array substrate 10. Yes. The scanning line 3a is made of, for example, conductive polysilicon, and the TFT 30 is on / off controlled by applying a scanning signal.

  The source region 1 s of the semiconductor layer 1 a is connected to the data line 6 a formed on the upper layer side through a contact hole 81 opened in the gate insulating film 2 a, the first interlayer insulating film 41 and the second interlayer insulating film 42. Electrically connected.

  The drain region 1 d of the semiconductor layer 1 a is electrically connected to the relay layer 8 through a contact hole 83 opened in the gate insulating film 2 a and the first interlayer insulating film 41. Further, the relay layer 8 is electrically connected to the pixel electrode 9 a formed on the upper layer side through a contact hole 85 opened in the second interlayer insulating film 42 and the third interlayer insulating film 43.

  A third interlayer insulating film 43 is laminated on the data line 6a, and a capacitor electrode 71 is formed further thereon. The capacitor electrode 71 is an example of the “capacitor electrode” in the present invention, and is held at a fixed potential by being electrically connected to the capacitor wiring 400 (see FIG. 3).

  A first capacitor insulating film 72, which is an example of the “first dielectric film” in the present invention, is sandwiched between the capacitor electrode 71 and the pixel electrode 9a, and a storage capacitor 70 is formed. Thus, by providing the storage capacitor 70 connected to the pixel electrode 9a to which the voltage corresponding to the image signal is applied, the voltage of the pixel electrode 9a is set to be, for example, longer than the time during which the image signal is actually applied. Since the liquid crystal element can be held for as long as three digits and the holding characteristics of the liquid crystal element are improved, a liquid crystal device having a high contrast ratio can be realized.

  Particularly in the present embodiment, the pixel electrode 9 a is formed so as to also serve as one of the pair of capacitor electrodes constituting the storage capacitor 70. That is, the pixel electrode 9 a functions as one capacitor electrode of the storage capacitor 70 in addition to the function as the original pixel electrode that controls the alignment state of the liquid crystal molecules constituting the liquid crystal 50. Therefore, for example, the stacked structure on the TFT array substrate 10 can be simplified as compared with a case where a storage capacitor having a pair of capacitor electrodes and a pixel electrode are provided separately.

  Further, since the capacitor electrode 71 and the pixel electrode 9a are made of ITO, which is a transparent conductive material, even if they are arranged in the opening region, the transmitted light is not blocked. Therefore, since it can be formed over both the open region and the non-open region, a storage capacitor having a capacitance value can be formed.

  Next, with reference to FIG. 6, a laminated structure near the capacitor CA in the peripheral region 10b in the liquid crystal device according to the present embodiment will be described.

  FIG. 6 is a cross-sectional view showing a laminated structure in the vicinity of the capacitor CA in the peripheral area 10b in comparison with the laminated structure in the image display area 10a. In FIG. 6, the scales of the layers and members are different from each other in order to make the layers and members recognizable on the drawing. In FIG. 6, for the sake of convenience of explanation, the detailed laminated structure other than the TFT 30 and the capacitor electrode 71 in the image display area 10a and the detailed laminated structure other than the capacitor (i) in the peripheral area 10b are not shown. .

  In the image display region 10 a, as described with reference to FIG. 5, the pixel switching TFTs 30 are arranged on the TFT array substrate 10 via the base insulating film 12 for each pixel unit 700. On the upper layer side of the TFT 30, the capacitor electrode 71 is widely formed across the plurality of pixel portions 700 through a predetermined insulating film or the like (not shown in FIG. 6). On the capacitor electrode 71, the first capacitor insulating film 72 is formed widely over the plurality of pixel portions 70, and the pixel electrode 9 a is formed in an island shape for each pixel portion 700 thereon. . Thus, the storage capacitor 70 is formed by stacking the capacitor electrode 71, the first capacitor insulating film 72, and the pixel electrode 9a from the lower layer side.

  On the other hand, in the peripheral region 10b, a signal line 500 for supplying an image signal is formed in the same layer as the capacitor electrode 71 in the image display region 10a. The signal line 500 is an example of the “first conductive layer” in the present invention, and is electrically connected to the data line 6a in the image display region 10a (see FIG. 3).

  The shield electrode 600 is formed in the same layer as the pixel electrode 9a in the image display region 10a. The shield electrode 600 is an example of the “second conductive layer” in the present invention, and is held at a fixed potential by being electrically connected to the capacitor wiring 400 (see FIG. 3) in the image display region 10a. By holding the shield electrode 600 at a fixed potential in this way, it functions as an electromagnetic shield for the signal line 500 and other wirings / elements arranged on the lower layer side. In other words, even if there is a source of electromagnetic noise on the upper layer side of the shield electrode 600, the signal noise 500 and other wirings / elements arranged on the lower layer side of the shield electrode 600 are blocked by the shield electrode 600. Will not be affected. If wiring / elements to which an image signal such as the signal line 500 is supplied are affected by electromagnetic noise, it may cause a reduction in the image quality of the display image. Since it can block | disconnect, the liquid crystal device 1 which can implement | achieve the high quality image display which is hard to be influenced by electromagnetic noise is realizable.

  A second capacitor insulating film 700 is sandwiched between the shield electrode 600 and the signal line 500 to form a capacitor C (i) for suppressing pushdown.

  In the present embodiment, in particular, the second capacitor insulating film 700 is formed integrally with the first capacitor insulating film 72 that forms the storage capacitor 70 in the image display region 10a (that is, the same film). By forming the second capacitor insulating film 700 in this manner, an etching process for separating the first capacitor insulating film 72 and the second capacitor insulating film 700 is performed when the liquid crystal device according to the present embodiment is manufactured. Since at least one step can be reduced, the manufacturing cost can be further reduced, and the layout in the stacked structure on the substrate can be simplified or made more efficient.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. In the following, a projector using a liquid crystal device as a light valve will be described. FIG. 7 is a plan view showing a configuration example of the projector.

  As shown in FIG. 7, a projector 1100 includes a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Accordingly, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R, 1110B.

  Note that since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 7, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, and an electronic notebook Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal device described in the above embodiment, the present invention also includes a reflective liquid crystal device (LCOS) in which elements are formed on a silicon substrate, a plasma display (PDP), a field emission display (FED, SED), The present invention can also be applied to an organic EL display, a digital micromirror device (DMD), an electrophoresis apparatus, and the like.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. The manufacturing method, the electro-optical device and the manufacturing method thereof, and the electronic apparatus including the electro-optical device are also included in the technical scope of the present invention.

  DESCRIPTION OF SYMBOLS 1a ... Semiconductor layer, 1a '... Channel region, 1s ... Source region, 1d ... Drain region, 2a, 2b ... Gate insulating film, 3a ... Scan line, 6a ... Data line, 9a ... Pixel electrode, 10 ... TFT array substrate, DESCRIPTION OF SYMBOLS 10a ... Image display area, 10b ... Peripheral area | region, 11a ... Light shielding film, 30 ... TFT, 41, 42, 43 ... Interlayer insulation film, 50 ... Liquid crystal layer, 70 ... Storage capacity, 71 ... Capacitance electrode, 72 ... 1st capacity | capacitance Insulating film, 500 ... signal line, 600 ... shield electrode, 700 ... second capacitor insulating film

Claims (8)

On the board
In the pixel region, pixel electrodes arranged for each pixel;
A capacitor electrode provided on the lower layer side of the pixel electrode so as to oppose the first dielectric film, and for adding a storage capacitor to the pixel electrode;
A first conductive layer which is formed of the same film as the capacitor electrode in a peripheral region located around the pixel region and constitutes one signal line used for supplying an image signal to the pixel electrode;
An electro-optical device comprising: a second conductive layer provided on the upper layer side of the first conductive layer so as to face the second dielectric film and formed of the same film as the pixel electrode.   The first conductive layer is a conductive layer constituting one signal line for supplying an image signal to the pixel electrode, and the second conductive layer is for adding a wiring capacitance to the one signal line. The electro-optical device according to claim 1, wherein the electro-optical device is a conductive layer.   The electro-optical device according to claim 1, wherein the second conductive layer is held at a predetermined potential.   The electro-optical device according to claim 3, wherein another signal line to which an image signal is supplied is disposed on a lower layer side than the second conductive layer.   5. The electro-optical device according to claim 1, wherein the first dielectric film is formed integrally with the second dielectric film. 6.   6. The pixel electrode, the capacitor electrode, the first conductive layer, and the second conductive layer are all formed of a transparent conductive material. 6. Electro-optic device.   The electro-optical device according to claim 6, wherein the transparent conductive material is ITO.   An electronic apparatus comprising the electro-optical device according to any one of 1 to 7.

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