JP5119875B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device, and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  In this type of electro-optical device, a pixel electrode, a scanning line for selectively driving the pixel electrode, a data line, and a TFT (Thin Film Transistor) as a pixel switching element are provided on a substrate. The active matrix driving is possible. In addition, a storage capacitor may be provided between the TFT and the pixel electrode for the purpose of increasing the contrast. On the substrate, a laminated structure in which various functional films such as a conductive film and a semiconductor film constituting the scanning lines, data lines, TFTs, etc. are laminated is formed in each pixel. For example, the pixel electrode is disposed on the uppermost layer in the stacked structure. The pixel electrode is typically formed as a transparent electrode made of an ITO (Indium Tin Oxide) film.

  For example, Patent Document 1 discloses a technique for securing a high aperture ratio by configuring the above-described storage capacitor from a pair of transparent electrodes facing each other with a capacitor insulating film interposed therebetween.

  Here, the active matrix drive controls the operation of the TFT by supplying a scanning signal to the scanning line, and is turned on by the scanning signal by supplying an image signal to the data line. In the driving method, an electric field corresponding to the image signal is applied to the pixel electrode corresponding to the TFT. As a method of supplying the image signal, for example, a method of sequentially supplying an image signal to each of the data lines, or a number of data lines adjacent to each other by serial-parallel conversion of the image signal, There is a method of supplying image signals simultaneously for each group.

  The electro-optical device driven in this way has a technical problem that display unevenness occurs due to push-down of the image signal potential written to the data line. That is, the case where the method of supplying the image signal simultaneously for each of the groups exemplified above will be described as an example. In this case, at the boundary between two adjacent groups, the image is substantially aligned with the data line. There is a problem that uneven display appears.

  In Patent Document 2, as a means for solving such a technical problem, a technique of providing a capacitor by being electrically connected to a part of a data line is disclosed.

Japanese Patent Laid-Open No. 6-148684 Japanese Patent Laid-Open No. 2004-125887

  Here, one of the pair of capacitor electrodes constituting the capacitor as described above is formed of an ITO film disposed in the uppermost layer in the same manner as the pixel electrode, and is a terminal made of, for example, aluminum exposed on the substrate surface. In the manufacturing process, for example, wet etching such as wet etching or photoresist peeling performed when exposing the terminal or patterning the capacitor electrode is performed in the manufacturing process. There is a technical problem that electric corrosion may occur in the treatment process. That is, when a capacitive electrode made of an ITO film disposed on the uppermost layer on the substrate and a terminal made of, for example, aluminum are electrically connected via a data line, an etching solution or resist stripping used in the wet processing step is performed. An electric current flows between the terminal and the capacitor electrode due to the processing liquid such as a liquid, and electric corrosion occurs, for example, the capacity electrode made of an ITO film is dissolved in the processing liquid or corroded. There is a risk that.

  The present invention has been made in view of the above-described problems, for example. An electro-optical device capable of preventing the occurrence of electrolytic corrosion in a wet processing step and capable of performing high-quality display, and such an electro-optical device. It is an object to provide an electronic device provided.

In order to solve the above problems, the electro-optical device of the present invention includes a plurality of pixel electrodes and at least a part of one wiring, electrode, or electronic element electrically connected to the plurality of pixel electrodes, Provided on a lower layer side through the insulating film than the pixel electrode, in a conductive portion made of the same film as the plurality of pixel electrodes, and in a peripheral region located around the pixel region in which the plurality of pixel electrodes are arranged A terminal at least partially exposed from the opening formed in the insulating film, and a first transistor having a source electrically connected to the terminal and a drain electrically connected to the conductive portion. .

  According to the electro-optical device of the present invention, on the substrate, for example, wirings such as scanning lines and data lines and electronic elements such as pixel switching TFTs are insulated from each other via an insulating film as necessary. A circuit for driving the pixel electrode is configured by stacking, and an image electrode is formed on the upper layer side. The pixel electrode is made of a transparent conductive film such as an ITO film. During the operation of the electro-optical device, for example, the switching operation of the pixel switching TFT electrically connected to the pixel electrode is controlled through the scanning line, and an image signal is supplied through the data line. A voltage corresponding to the image signal is applied to the pixel electrode via the. As a result, it is possible to display an image in a pixel region or a pixel array region (or also referred to as an “image display region”) in which a plurality of pixel electrodes are arranged.

  In the present invention, the conductive portion constitutes at least a part of one wiring, electrode, or electronic element for driving a plurality of pixel electrodes. For example, the conductive portion is formed as one capacitance electrode of a pair of capacitance electrodes constituting an additional capacitance electrically connected to the data line. The conductive portion is made of the same film as the plurality of pixel electrodes. Here, the “same film” according to the present invention means films formed on the same occasion in the manufacturing process, and are the same kind of film. That is, the conductive portion is formed of a transparent conductive film such as an ITO film formed on the same occasion as a plurality of pixel electrodes in the manufacturing process. Note that “consisting of the same film” according to the present invention does not mean that it is continuous as a single film, but basically is a part of the same film that is separated from each other. That is enough.

  The terminal is provided in a peripheral region located around the pixel region. The terminal is made of a conductive film containing, for example, aluminum provided on the lower layer side of the pixel electrode with an insulating film interposed therebetween, and is formed so that part or all of the terminal is exposed from the opening formed in the insulating film. . An external circuit can be electrically connected to a portion of the terminal exposed from the opening, and for example, a predetermined potential can be supplied from the external circuit to the terminal.

  In particular, the present invention includes a first transistor having a source electrically connected to the terminal and a drain electrically connected to the conductive portion. The first transistor can function as a switching element that controls switching of electrical connection between the terminal and the conductive portion. Therefore, in the manufacturing process, the first transistor in the off state is electrically cut off between the terminal and the conductive portion (that is, the terminal and the conductive portion are insulated), and at the time of operation of the electro-optical device, the on state is established. By using the first transistor, it is possible to electrically connect the terminal and the conductive portion. Therefore, in the manufacturing process, for example, an etching solution used in the wet treatment process in a state where a conductive portion made of a transparent conductive film such as an ITO film and a terminal made of a conductive film containing aluminum or the like are electrically connected to each other. It can prevent that a terminal and an electroconductive part are exposed to process liquids, such as resist stripping solution, simultaneously. Thereby, the electrolytic corrosion that may occur when the terminal and the conductive part are exposed to the treatment liquid at the same time with the terminal and the conductive part being electrically connected (in other words, the battery effect or the battery action between the terminal and the conductive part). Occurrence of the phenomenon that the conductive part is corroded due to the occurrence of.

  Further, when the electro-optical device is operated, a predetermined potential can be supplied to the conductive portion from, for example, an external circuit through a terminal and a first transistor that is turned on. Therefore, for example, when the conductive portion is formed as one capacitive electrode of a pair of capacitive electrodes constituting an additional capacitor electrically connected to the data line, the conductive portion is reliably used as the one capacitive electrode. Can function. Therefore, for example, by adding the additional capacitance to the wiring capacitance of the data line or the capacitance generated by the overlapping of the data line and another wiring, the capacitance around the data line can be appropriately secured. As a result, it is possible to suppress a change in the potential that the data line should hold, that is, a push-down of the image signal potential written to the data line. As a result, it is possible to reduce or prevent the occurrence of display unevenness along, for example, the data line due to the push-down of the image signal potential written to the data line. That is, at the time of operation of the electro-optical device, the conductive portion and the terminal are electrically connected to each other, so that the conductive portion drives at least a part of one wiring, electrode, or electronic element for driving a plurality of pixel electrodes. Can function reliably.

  As described above, according to the electro-optical device according to the present invention, it is possible to prevent the occurrence of electrolytic corrosion in the wet treatment process and to perform high-quality display.

  In one aspect of the electro-optical device of the present invention, each of the pixel electrode and the conductive portion is made of an ITO film, and the terminal is made of aluminum.

  According to this aspect, for example, in the step of patterning the etching solution used in the step of forming the opening for exposing the terminal containing aluminum in the insulating film, the pixel electrode and the conductive portion made of the ITO film, respectively. It is possible to prevent the terminal and the conductive portion from being simultaneously exposed to a processing solution such as a resist stripping solution used while being electrically connected to each other. Therefore, the occurrence of electrolytic corrosion can be prevented.

  In another aspect of the electro-optical device of the present invention, a constant potential line for supplying a constant potential is provided on the substrate, and the gate of the first transistor is electrically connected to the constant potential line.

  According to this aspect, the gate of the first transistor is electrically connected to the constant potential line that supplies a constant potential (for example, a power supply potential, a ground potential, etc.). Accordingly, the first transistor can be turned off in the wet treatment step in the manufacturing process, and the first transistor can be turned on during the operation of the electro-optical device. That is, in the wet treatment process, a constant potential is not supplied to the gate of the first transistor, and the first transistor is turned off, so that the terminal and the conductive portion can be electrically disconnected, and During operation of the optical device, a constant potential is supplied to the gate of the first transistor and the first transistor is turned on, so that the terminal and the conductive portion can be electrically connected. Therefore, it is possible to prevent the occurrence of electrolytic corrosion in the wet processing step, and to reliably supply a predetermined potential to the conductive portion from the external circuit, for example, via the terminal and the first transistor during the operation of the electro-optical device. it can.

  In another aspect of the electro-optical device according to the aspect of the invention, a data line that is provided in the pixel region and supplies an image signal to the pixel electrode, and the conductive portion is one first capacitance electrode of a pair of first capacitance electrodes. And an additional capacitor electrically connected to the data line.

  According to this aspect, the additional capacitor is electrically connected to the data line. Therefore, by adding the additional capacitance to the wiring capacitance of the data line or the capacitance generated by the overlapping of the data line and another wiring, the capacitance around the data line can be appropriately secured. As a result, it is possible to suppress a change in the potential that the data line should hold, that is, a push-down of the image signal potential written to the data line. As a result, it is possible to reduce or prevent the occurrence of display unevenness along, for example, the data line due to the push-down of the image signal potential written to the data line.

  During operation of the electro-optical device, a predetermined potential is supplied from an external circuit via the terminal and the first transistor to the conductive portion serving as one of the first capacitive electrodes constituting the additional capacitor. Functions as a fixed potential side electrode. The other first capacitor electrode constituting the additional capacitor functions as a pixel potential side electrode by being electrically connected to the data line.

  In the aspect including the additional capacitor described above, the second capacitor electrode provided on the lower layer side of the pixel electrode so as to face the pixel electrode via the capacitor insulating film is provided, and the second capacitor electrode of the pair of first capacitor electrodes is provided. The other first capacitor electrode and the second capacitor electrode may be formed of the same film.

  According to this aspect, the storage capacitor is formed by the pixel electrode and the second capacitor electrode facing the pixel electrode via the capacitor insulating film. The second capacitor electrode is typically made of a transparent conductive film such as ITO, for example, similarly to the pixel electrode. The second capacitor electrode may be connected to the capacitor line, or a part of the capacitor line may be the second capacitor electrode. The second capacitor electrode is connected to a power source or a wiring having a predetermined potential via a capacitor line. By forming the storage capacitor, the potential holding characteristic of the pixel electrode is improved, and the display characteristics such as improvement of contrast and reduction of flicker can be improved.

  Furthermore, according to this aspect, since the second capacitor electrode is provided on the lower layer side than the pixel electrode, the coupling between the pixel electrode and the lower layer side of the second capacitor electrode (that is, electrical coupling such as capacitance coupling) is performed. It can also function as a shield layer that prevents electromagnetic coupling), that is, a conductive layer that performs electromagnetic shielding. By preventing the coupling, it is possible to reduce the possibility of potential fluctuation or the like in the pixel electrode. Therefore, it is possible to display a higher quality image. The “lower layer side of the second capacitor electrode” is, for example, the above-described data line, scanning line, pixel switching TFT, or the like. Moreover, when another conductive layer exists, those layers may be sufficient.

  In addition, in this embodiment, the other first capacitor electrode that constitutes the additional capacitor and the second capacitor electrode that constitutes the storage capacitor are made of the same film. It is possible to form in the same film forming process. Therefore, it is possible to prevent the manufacturing process from becoming long and complicated.

  In another aspect of the electro-optical device of the present invention, the electro-optical device includes a second transistor that is provided corresponding to the pixel electrode and performs switching control of the pixel electrode, and the first semiconductor layer constituting the first transistor and the second transistor The second semiconductor layer constituting the transistor is made of the same film.

  According to this aspect, since the first semiconductor layer constituting the first transistor and the second semiconductor layer constituting the second transistor functioning as a pixel switching TFT are formed of the same film, the first semiconductor layer And the second semiconductor layer can be formed in the same film formation step. Therefore, it is possible to prevent the manufacturing process from becoming long and complicated.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is provided, a projection display device, a television, a mobile phone, an electronic notebook, and a word processor capable of performing high-quality display. Various electronic devices such as a viewfinder type or a monitor direct view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. Further, as the electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  The operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a driving circuit built-in type TFT active matrix driving type liquid crystal device, which is an example of the electro-optical device of the present invention, is taken as an example.

<First Embodiment>
The liquid crystal device according to the first embodiment will be described with reference to FIGS.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2.

  FIG. 1 is a schematic plan view showing a configuration of a liquid crystal device as seen from the side of a counter substrate, together with each component formed on the TFT array substrate, and FIG. 'Cross section.

  1 and 2, the liquid crystal device according to the present embodiment includes a TFT array substrate 10 and a counter substrate 20 that are arranged to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, or a silicon substrate. The counter substrate 20 is also a substrate made of the same material as the TFT array substrate 10, for example. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are image display regions 10a as examples of the “pixel region” according to the present invention. Are adhered to each other by a sealing material 52 provided in a sealing region located around the periphery of the substrate.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. Further, for example, in the sealing material 52, a gap material 56 such as a glass fiber or a glass bead for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. The liquid crystal device according to this embodiment is small and suitable for performing enlarged display for a light valve of a projector.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101, a sampling circuit 7, a scanning line driving circuit 104, and an external circuit connection terminal 102 are formed in the peripheral area located around the image display area 10 a on the TFT array substrate 10.

  In the peripheral region on the TFT array substrate 10, a data line driving circuit 101 and a plurality of external circuit connection terminals 102 are provided along one side of the TFT array substrate 10 on the outer peripheral side of the seal region. The plurality of external circuit connection terminals 102 include a power supply terminal 102c described later, which is an example of the “terminal” according to the present invention.

  Further, a region located on the inner side of the seal region in the peripheral region on the TFT array substrate 10 is covered with the frame light shielding film 53 along one side of the image display region 10 a along one side of the TFT array substrate 10. A sampling circuit 7 is arranged.

  The scanning line driving circuit 104 is provided along two sides adjacent to one side of the TFT array substrate 10 so as to be covered with the frame light shielding film 53. Further, in order to electrically connect the two scanning line driving circuits 104 provided on both sides of the image display region 10a in this way, the TFT array substrate 10 is covered with the frame light shielding film 53 along the remaining side. A plurality of wirings 105 are provided.

  In the peripheral region on the TFT array substrate 10, vertical conduction terminals 106 are disposed in regions facing the four corners of the counter substrate 20, and vertical conduction is provided between the TFT array substrate 10 and the counter substrate 20. A material is provided corresponding to the vertical conduction terminal 106 and electrically connected to the terminal 106.

  In FIG. 2, on the TFT array substrate 10, a laminated structure is formed in which wirings such as TFTs for pixel switching, scanning lines, and data lines are formed. In the image display area 10a, pixel electrodes 9a are provided in a matrix on the upper layer of wiring such as pixel switching TFTs, scanning lines, and data lines. The pixel electrode is formed as a transparent electrode made of an ITO film. An alignment film 16 is formed on the pixel electrode 9a.

  On the other hand, a light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. The light shielding film 23 is formed of, for example, a light shielding metal film or the like, and is patterned, for example, in a lattice shape in the image display region 10a on the counter substrate 20. On the light shielding film 23 (below the light shielding film 23 in FIG. 2), the counter electrode 21 made of an ITO film is formed, for example, in a solid shape so as to face the plurality of pixel electrodes 9a, and further on the counter electrode 21 (FIG. 2, below the counter electrode 21), an alignment film 22 is formed.

  The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. A liquid crystal storage capacitor is formed between the pixel electrode 9 a and the counter electrode 21 by applying a voltage to each of the liquid crystal devices during driving.

  Although not shown here, on the TFT array substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, a plurality of data lines are precharged at a predetermined voltage level prior to the image signal. A precharge circuit to be supplied, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacture or at the time of shipment may be formed.

  Next, the electrical configuration of the liquid crystal device according to the present embodiment will be described with reference to FIG.

  FIG. 3 is a block diagram showing an electrical configuration of the liquid crystal device according to the present embodiment.

  In FIG. 3, the liquid crystal device according to the present embodiment includes a scanning line driving circuit 104, a data line driving circuit 101, a sampling circuit 7, an image signal line in a peripheral region located around the image display region 10a of the TFT array substrate 10. 171 and a capacitor CA.

  The scanning line driving circuit 104 includes a Y clock signal CLY, an inverted Y clock signal CLYinv, and a Y start pulse DY from an external timing control circuit (not shown) via an external circuit connection terminal 102 (see FIG. 1). Is supplied. When the Y start pulse DY is input, the scanning line driving circuit 104 sequentially generates and outputs the scanning signal Gi (i = 1,..., M) at a timing based on the Y clock signal CLY and the inverted Y clock signal CLYinv. To do. The scanning line driving circuit 104 includes a high-potential side power supply potential VDD and a low-potential side having a potential lower than the high-potential side power supply potential from an external power supply circuit (not shown) via the external circuit connection terminal 102. The power supply potential VSS is supplied.

  The data line driving circuit 101 is supplied with an X clock signal CLX, an inverted X clock signal CLXinv, and an X start pulse DX from an external timing control circuit via an external circuit connection terminal 102. When the X start pulse DX is input, the data line driving circuit 101 sequentially generates and outputs a sampling signal Si (i = 1,..., N) at a timing based on the X clock signal CLX and the inverted X clock signal XCLXinv. To do. The data line driving circuit 101 is supplied with a high-potential-side power supply potential VDD and a low-potential-side power supply potential VSS from an external power supply circuit via an external circuit connection terminal 102.

  Each of the scanning line driving circuit 104 and the data line driving circuit 101 includes signal processing means such as a shift register including a plurality of TFTs formed in a peripheral region on the TFT array substrate 10.

  The sampling circuit 7 includes a plurality of sampling switches 77 provided for each data line 6a. Each sampling switch 77 is composed of a P-channel or N-channel single-channel TFT. For this reason, as compared with the case where each sampling switch 77 is composed of complementary TFTs, the area on the TFT array substrate 10 required for disposing each sampling switch 77 can be reduced, so that a plurality of samplings can be obtained. The switches 77 can be arranged at a finer pitch.

  In FIG. 3, the liquid crystal device according to the present embodiment includes data lines 6 a and scanning lines 11 that are wired vertically and horizontally in an image display region 10 a that occupies the center of the TFT array substrate 10. Pixel portions 700 are provided in a matrix at positions corresponding to intersections at which the data lines 6a and the scanning lines 11 intersect each other.

  The pixel unit 700 includes a liquid crystal element 118, a pixel switching TFT 30, and a storage capacitor 70.

  The liquid crystal element 118 includes a pixel electrode 9a, a counter electrode 21, and a liquid crystal layer 50 sandwiched between the pair of electrodes (see FIG. 2). The pixel electrode 9a holds the liquid crystal capacitance formed with the counter electrode 21 for a certain period according to the image signal.

  The TFT 30 is an example of the “second transistor” according to the present invention, and is provided to apply the image signal supplied from the data line 6a to the selected pixel. The gate of the TFT 30 is electrically connected to the scanning line 11, and the source is electrically connected to the data line 6a. The drain of the TFT 30 is electrically connected to the pixel electrode 9a (see FIG. 2) constituting the liquid crystal element 118.

  One capacitor electrode 71 of the storage capacitor 70 is electrically connected to the common potential line 91. The common potential line 91 is electrically connected to a power supply circuit provided outside via a transistor 500 and an external circuit connection terminal 102 (more specifically, a power supply terminal 102c among the plurality of external circuit connection terminals 102). It is connected. The potential of the power source supplied to the common potential line 91 (and the capacitor electrode 71 electrically connected thereto) is the common potential LCCOM supplied to the counter electrode 21 (see FIG. 2) disposed to face the pixel electrode 9a. It is. That is, the potential of one capacitor electrode 71 of the storage capacitor 70 is maintained at the common potential LCCOM when the liquid crystal device is driven. In the present embodiment, the common potential LCCOM has an intermediate potential between the high potential side power source potential VDD and the low potential side power source potential VSS.

  The storage capacitor 70 is added in parallel with the liquid crystal element 118. Since the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is, for example, three orders of magnitude longer than the time when the image signal is applied, the holding characteristics are improved, so that a high contrast ratio is realized. A specific configuration of the storage capacitor 70 will be described later.

  The transistor 500 is an example of the “first transistor” according to the present invention, and its source is electrically connected to the power supply terminal 102 c and its drain is electrically connected to the common potential line 91. A gate of the transistor 500 is electrically connected to a power supply potential line 95 to which a high potential side power supply potential VDD is supplied from an external power supply circuit via an external circuit connection terminal 102 when the liquid crystal device is driven. Therefore, the transistor 500 is turned off in the manufacturing process of the liquid crystal device, and is turned on when the liquid crystal device is driven, so that electrical connection between the power supply terminal 102c and the common potential line 91 is switched. Can be controlled. Note that a specific structure of the transistor 500 will be described in detail later. The power supply potential line 95 is an example of the “constant potential line” according to the present invention.

  Each of the image signal lines 171 is electrically connected to the corresponding data line 6 a via the sampling circuit 7. Image signals of N systems (N = 6, that is, 6 systems in this embodiment) obtained by serial-parallel conversion of one system of input image data VID supplied from an external circuit are turned on / off according to the sampling signal Si. It is supplied to each of the data lines 6a via the sampling switch 77 to be switched. The N system image signals are generated, for example, by converting one system of input image data using signal conversion means such as an image signal supply circuit (not shown). Serial-parallel conversion is also called serial-parallel expansion or phase expansion.

  In this embodiment, six systems, that is, six-phase (N = 6) image signals VID1 to VID6 are generated, and six image signal lines 171 are provided corresponding to these six-phase image signals. Further, in the image signal supply circuit (not shown), each voltage of the image signals VID1 to VID6 is inverted to a positive polarity and a negative polarity with respect to the common potential LCCOM which is a reference potential, and thus the polarity-reversed image signal. VID1 to VID6 are output. Note that the number of phase expansion of the image signal (that is, the number of image signal sequences that are serial-parallel expanded) is not limited to six phases.

  The capacitor part CA is provided on the TFT array substrate 10 on the side opposite to the data line driving circuit 101 with respect to the image display area 10a in the peripheral area of the image display area 10a. The capacitor CA includes a plurality of capacitors 600 as an example of the “additional capacitor” according to the present invention. The plurality of capacitors 600 are electrically connected to the common potential line 91 and each data line 6a. The capacitor 600 is connected to the other end of the data line 6a different from the one end to which the data line driving circuit 101 is connected. That is, the data line driving circuit 101 is disposed at one end of the data line 6a, and the capacitor 600 is disposed at the other end. In the present embodiment, the capacitor CA (in other words, the plurality of capacitors 600) is configured to be provided on the opposite side of the data line driving circuit 101 with respect to the image display area 10a in the peripheral area. The capacitor unit CA may be configured to be provided in another area in the peripheral area or a part of the image display area 10a.

  By such a capacitor 600, when the sampling switch 77 is turned on, the image signal potential supplied to the data line 6a becomes smaller than the original image signal potential (that is, pushdown). It can be reduced or prevented. That is, for example, the capacitance around the data line 6a is appropriately secured by adding the capacitance of the capacitor 600 to the wiring capacitance of the data line 6a or the capacitance generated by the overlapping of the data line 6a and another wiring. Can do. Therefore, it is possible to suppress the fluctuation in the potential that the data line 6a should hold, that is, the push-down of the image signal potential written to the data line 6a. As a result, it is possible to reduce or prevent the occurrence of display unevenness along, for example, the data line 6a due to the push-down of the image signal potential written to the data line 6a.

  In the present embodiment, as will be described later, the plurality of data lines 6a are sequentially driven for each data line group including six data lines 6a as one group.

  Next, the operation principle of the liquid crystal device according to the present embodiment will be described with reference to FIG.

  3, the liquid crystal device according to the present embodiment adopts a TFT active matrix driving method, applies scanning signals G1, G2,..., Gm from the scanning line driving circuit 104 to the respective scanning lines 11 line-sequentially, and TFT 30 An image signal is applied from the data line driving circuit 101 to the data line 11 in the column of the selected pixel region in the horizontal direction in which is turned on. At this time, the image signal may be supplied to each data line 6a line by line. As a result, the image signal is supplied to the pixel electrode 9a in the selected pixel region. In the liquid crystal device according to the present embodiment, the TFT array substrate 10 and the counter substrate 20 are disposed to face each other via the liquid crystal layer 50 (see FIG. 2). By applying an electric field to the layer 50, the amount of transmitted light between the two substrates is controlled for each pixel, and an image is displayed in gradation.

  Image signals VID <b> 1 to VID <b> 6 that are serially and parallelly developed in six phases are supplied to each pixel unit 700 via N image signals 171 in this embodiment. As will be described below, the data lines 6a are sequentially driven for each data line group including six data lines 6a corresponding to the number of image signal lines 171 as a group.

  A sampling signal Si (i = 1, 2,..., N) is sequentially supplied from the data line driving circuit 101 to each sampling switch 77 corresponding to the data line group, and each sampling switch 77 is turned on according to the sampling signal Si. It becomes.

  Therefore, the image signals VID1 to VID6 are simultaneously supplied from each of the six image signal lines 171 to the data lines 6a belonging to the data line group and sequentially for each data line group through the sampling switch 77 switched to the ON state. Thus, the data lines 6a belonging to one data line group are driven simultaneously. Therefore, according to the liquid crystal device according to the present embodiment, since the data line 6a is driven for each data line group, the driving frequency can be suppressed.

  An applied voltage defined by the potentials of the pixel electrode 9 a and the counter electrode 21 is applied to the liquid crystal element 118. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast according to the image signals VID1 to VID6 is emitted from the liquid crystal device according to the present embodiment as a whole, and an image is displayed.

  Next, a specific configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIGS.

  FIG. 4 is a plan view of the pixel portion of the liquid crystal device according to the first embodiment. FIG. 5 is a cross-sectional view taken along line A-A ′ of FIG. 4. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member to have a size that can be recognized on the drawing. 4 and 5, for convenience of explanation, illustration of a portion located above the pixel electrode 9a is omitted. In FIG. 4, some wirings and electrodes such as the scanning lines 11 are transparently illustrated.

  In FIG. 4, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10 (see FIG. 2) and are transparent electrodes made of an ITO film. Data lines 6a and scanning lines 11 are provided along the vertical and horizontal boundaries of the pixel electrode 9a. In other words, the scanning line 11 extends along the X direction, and the data line 6 a extends along the Y direction so as to intersect the scanning line 11. On the upper layer side of the scanning line 11, a pixel switching TFT 30 is provided for each pixel electrode 9a.

  The scanning line 11, the data line 6a, the TFT 30, and the relay electrode 60 to be described later are viewed on the TFT array substrate 10 in plan view, and the opening area of each pixel corresponding to the pixel electrode 9a (that is, each pixel is actually displayed. Is disposed in a non-opening region surrounding a region where light contributing to the light is transmitted or reflected. That is, the scanning line 11, the data line 6a, the TFT 30, and the relay electrode 60 are arranged not in the opening area of each pixel but in the non-opening area so as not to disturb display.

  During the operation of the liquid crystal device according to the present embodiment, the supply of the image signal from the data line 6a to the pixel electrode 9a is controlled, and the so-called active matrix image display is possible. The image signal is data at a predetermined timing when the TFT 30 which is a switching element electrically connected between the data line 6a and the pixel electrode 9a is turned on / off according to the scanning signal supplied from the scanning line 11. The pixel electrode 9a is supplied from the line 6a through the TFT 30.

  As shown in FIG. 5, on the TFT array substrate 10, various components such as the pixel electrode 9a described above have a laminated structure. The various components are, in order from the bottom, the first layer (that is, the first conductive layer) including the scanning line 11 and the like, the second layer (that is, the second conductive layer) including the semiconductor layer 1a, and the data line 6a. Etc., a third layer (ie, a third conductive layer), a fourth layer (ie, a fourth conductive layer) containing the capacitor electrode 71, etc., and a fifth layer (fifth conductive layer) containing the pixel electrode 9a, etc. ). Further, the base insulating film 12 is provided between the first conductive layer and the second conductive layer, and the first interlayer insulating film 41, the third conductive layer, and the fourth conductive layer are provided between the second conductive layer and the third conductive layer. Between the layers, a second interlayer insulating film 42, a capacitive insulating film 75 is provided between the fourth conductive layer and the fifth conductive layer, respectively, to prevent a short circuit between various components. The first interlayer insulating film 41 and the second interlayer insulating film 42 are made of, for example, NSG (non-silicate glass). In addition, the first interlayer insulating film 41 and the second interlayer insulating film 42 may be formed of silicate glass such as PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), silicon nitride, silicon oxide, or the like. Can be used.

  4 and 5, the TFT 30 includes the semiconductor layer 1a and the gate electrode 3a. The semiconductor layer 1a is an example of the “second semiconductor layer” according to the present invention.

  The semiconductor layer 1a is made of a polysilicon film, and includes a channel region 1a ′, a data line side LDD region 1b, a pixel electrode side LDD region 1c, a data line side source / drain region 1d, and a pixel electrode side source provided along the X direction. It consists of a drain region 1e. That is, the TFT 30 has an LDD structure. The data line side source / drain region 1 d is electrically connected to the data line 6 a through a contact hole 81 formed in the first interlayer insulating film 41. The pixel electrode side source / drain region 1e is electrically connected to the pixel electrode 9a through a contact hole 83 formed in the first interlayer insulating film 41, a relay electrode 60 and a contact hole 85 described later.

  The data line side source / drain region 1d and the pixel electrode side source / drain region 1e are formed substantially in mirror symmetry along the X direction with respect to the channel region 1a '. The data line side LDD region 1b is formed between the channel region 1a 'and the data line side source / drain region 1d. The pixel electrode side LDD region 1c is formed between the channel region 1a 'and the pixel electrode side source / drain region 1e. The data line side LDD region 1b, the pixel electrode side LDD region 1c, the data line side source / drain region 1d, and the pixel electrode side source / drain region 1e are formed by implanting impurities into the semiconductor layer 1a by an impurity implantation such as an ion implantation method. This is an impurity region. The data line side LDD region 1b and the pixel electrode side LDD region 1c are formed as low concentration impurity regions with less impurities than the data line side source / drain region 1d and the pixel electrode side source / drain region 1e, respectively. According to such an impurity region, when the TFT 30 is not operating, the off-current flowing between the source region and the drain region can be reduced, and a decrease in the on-current flowing when the TFT 30 is operating can be suppressed. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity implantation is performed in the data line side LDD region 1b and the pixel electrode side LDD region 1c. A self-alignment type in which the data line side source / drain region and the pixel electrode side source / drain region are formed by implanting the concentration may be used.

  4 and 5, the gate electrode 3a is disposed on the upper layer side of the semiconductor layer 1a via the first interlayer insulating film 41, and is formed to face the channel region 1a '. The first interlayer insulating film 41 is formed over almost the entire surface of the TFT array substrate 10. A portion of the first interlayer insulating film 41 formed between the channel region 1a ′ and the gate electrode in the stacked structure on the TFT array substrate 10 serves as a gate insulating film that insulates between the gate electrode 3a and the channel region 1a ′. Function.

  As shown in FIG. 5, the gate electrode 3a is formed as a film having a two-layer structure of a layer 3a1 made of conductive polysilicon in the lower layer and a layer 3a2 containing aluminum in the upper layer. Therefore, a TFT 30 having a gate electrode made of a conductive polysilicon film, which is a traditional or conventional typical TFT in this type of liquid crystal device, is used almost or completely as it is. Can be formed.

  The layer 3a2 containing aluminum may be formed of only an aluminum film. For example, a titanium (Ti) film, a titanium nitride (TiN) film, an aluminum (Al) film, and a titanium nitride (TiN) film may be used. You may form from the multilayer film laminated | stacked from the lower layer side in order. In other words, the gate electrode 3a may be formed by laminating a conductive polysilicon film and an aluminum film in this order from the lower layer side. For example, a conductive polysilicon film, a Ti film, a TiN film The Al film and the TiN film may be formed by laminating from the lower layer side in this order.

  In FIG. 5, a scanning line 11 is provided on the lower layer side of the semiconductor layer 1 a on the TFT array substrate 10 through the base insulating film 12. The scanning line 11 is made of a light-shielding conductive material such as a refractory metal material such as tungsten (W), Ti, or TiN. The scanning line 11 is formed so as to extend along the X direction of FIG. 4 and to include a region facing the channel region 1a 'and the pixel electrode side LDD region 1c of the TFT 30.

  According to such a scanning line 11, the TFT 30 receives the return light such as the back surface reflection on the TFT array substrate 10 or the light emitted from another liquid crystal device by a multi-plate projector or the like and penetrating the composite optical system. The channel region 1a ′ and the pixel electrode side LDD region 1c can be shielded almost or completely.

  In FIG. 5, the base insulating film 12 is made of, for example, a silicon oxide film. In addition to the function of insulating the semiconductor layer 1a from the scanning line 11, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10, so that the surface of the TFT array substrate 10 is roughened during polishing or remains after cleaning. It has a function of preventing deterioration of the characteristics of the TFT 30 due to dirt or the like.

  In FIG. 5, a data line 6a and a relay electrode 60 are provided on the upper layer side of the semiconductor layer 1a on the TFT array substrate 10 via the first interlayer insulating film 41, in addition to the gate electrode 3a described above. .

  The data line 6a is made of the same film as the gate electrode 3a (and the relay layer 60). That is, similarly to the gate electrode 3a, the data line 6a is formed as a film having a two-layer structure of a layer 6a1 made of conductive polysilicon in the lower layer and a layer 6a2 containing aluminum in the upper layer. The data line 6a is formed to extend along the Y direction in FIG. The data line 6 a is electrically connected to the data line side source / drain region 1 d of the TFT 30 through a contact hole 81 opened in the first interlayer insulating film 41. Since the contact hole 81 penetrates only one layer of the interlayer insulating film (that is, the first interlayer insulating film 41), the depth thereof can be relatively short, and the opening is easy by etching or the like. Also, since the aspect ratio is small, it is easy to make a good contact even at the bottom. Further, the electrical connection between the data line 6a and the data line side source / drain region 1d of the TFT 30 is made by connecting the layer 6a1 made of conductive polysilicon constituting the data line 6a and the data line side source / drain region made of polysilicon. This is realized by contact with 6a1, and the electrical connection between them can be improved.

  The relay electrode 60 is made of the same film as the gate electrode 3a (and the data line 6a). That is, like the gate electrode 3a, the relay electrode 60 is formed as a film having a two-layer structure of a layer 61 made of conductive polysilicon in the lower layer and a layer 62 containing aluminum in the upper layer. The relay electrode 60 is electrically connected to the pixel electrode side source / drain region 1e of the TFT 30 through a contact hole 83 formed in the first interlayer insulating film 41, and the second interlayer insulating film 42 and the capacitor insulating film. The pixel electrode 9a is electrically connected through a contact hole 85 opened through 75. Therefore, the relay electrode 60 relays the electrical connection between the pixel electrode 9a and the pixel electrode side source / drain region 1e of the TFT 30. Therefore, it is possible to avoid a situation in which the interlayer distance between the relay electrode 60 and the pixel electrode side source / drain region 1e is long and it is difficult to connect the two using a single contact hole. Further, the relay electrode 60 makes it possible to reduce the electrical resistance between the pixel electrode 9a and the pixel electrode side source / drain region 1e.

  As shown in FIGS. 4 and 5, the gate electrode 3a, the data line 6a, and the relay electrode 60 are formed so as to have a planar shape that is continuous with each other when viewed in plan on the TFT array substrate 10. Instead, each person is formed so as to be divided for patterning. Accordingly, the gate electrode 3a, the data line 6a, and the relay electrode 60 are electrically insulated from each other by the second interlayer insulating film 42. In this way, the gate electrode 3a, the data line 6a, and the relay electrode 60 are formed from the same film, thereby simplifying the configuration of the pixel and manufacturing the pixel as compared with the case where they are formed separately from different materials. The number of steps in the process can also be reduced and simplified.

  In FIG. 5, a capacitor electrode 71 as an example of the “second capacitor electrode” according to the present invention is provided on the upper layer side of the data line 6a on the TFT array substrate 10 via the second interlayer insulating film. Yes. The capacitor electrode 71 is provided so as to cover both the opening region and the non-opening region except for a portion where the contact hole 85 for electrically connecting the pixel electrode 9a and the relay electrode 60 is provided.

  The capacitor electrode 71 is disposed so as to face the pixel electrode 9 a with the capacitor insulating film 75 therebetween, and forms a storage capacitor 70.

  The capacitor electrode 71 is a fixed potential side capacitor electrode that is electrically connected to the common potential line 91 and maintained at the common potential LCCOM as described above with reference to FIG. The capacitor electrode 71 is made of a transparent conductive material such as ITO.

  The capacitor insulating film 75 is, for example, a single layer structure or a multilayer structure formed of a silicon oxide (SiO 2) film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride (SiN) film. have.

  As described above, by forming the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a is improved, and it is possible to improve display characteristics such as improvement of contrast and reduction of flicker. In addition, since the storage capacitor 70 is formed by the pixel electrode 9a and the capacitor electrode 71, the device configuration is compared with a case where, for example, an upper electrode and a lower electrode are provided in addition to the pixel electrode 9a to form a storage capacitor. Can be simplified. Furthermore, since the capacitor electrode 71 is provided on the lower layer side than the pixel electrode 9a, electrical or electromagnetic coupling between the pixel electrode 9a and the lower layer side (for example, the data line 6a) of the capacitor electrode 71 is prevented. It can also function as a shield layer. Therefore, it is possible to reduce the possibility of potential fluctuations or the like in the pixel electrode 9a.

  The configuration of the pixel portion described above is common to each pixel portion as shown in FIG. Such pixel portions are periodically formed in the image display area 10a (see FIG. 1).

  Next, specific configurations of the capacitor 600, the transistor 500, and the power supply terminal 102c described above will be described with reference to FIG. 6 in addition to FIGS.

  FIG. 6 is a cross-sectional view showing a configuration relating to the connection between the capacitor electrically connected to the data line and the power supply terminal. In FIG. 6, the scales of the layers and members are different from each other in order to make the layers and members recognizable on the drawing. 6 conceptually shows a cross section along a path from the power supply terminal 102c to one capacitor 600 of the plurality of capacitors 600 through the transistor 500 and the common potential line 91.

  In FIG. 6, a capacitor 600 includes a fixed potential side electrode 610 and a pixel potential side electrode 620, and a capacitor insulating film 75 is sandwiched between the pair of electrodes.

  The fixed potential side electrode 610 is an example of the “conductive portion” according to the present invention, and is formed from the same film as the pixel electrode 9a described above with reference to FIG. 5 (that is, an ITO film disposed on the capacitor insulating film 75). Is formed. The fixed potential side electrode 610 is formed to have a predetermined planar shape. The fixed potential side electrode 610 is electrically connected to the common potential line 91 through a contact hole 89 opened through the capacitor insulating film 75 and the second interlayer insulating film 42. For this reason, the fixed potential side electrode 610 is maintained at the common potential LCCOM when the liquid crystal device is driven.

  The pixel potential side electrode 620 is formed to face the fixed potential side electrode 610 with the capacitor insulating film 75 interposed therebetween. That is, the pixel potential side electrode 620 is formed of the same film as the capacitor electrode 71 described above with reference to FIG. 5 (that is, a transparent conductive film such as an ITO film disposed on the second insulating film 42). . The pixel potential side electrode 620 is electrically connected to the data line 6 a through a contact hole 88 opened in the second interlayer insulating film 42.

  Thus, in the present embodiment, in particular, the capacitor 600 includes the fixed potential side electrode 610 formed of the same film as the pixel electrode 9a, the pixel potential side electrode 620 formed of the same film as the capacitor electrode 71, and a pair of these. The capacitor insulating film 75 is sandwiched between the electrodes. In other words, the capacitor 600 and the storage capacitor 70 (see FIG. 5) are formed at the same opportunity in the manufacturing process stage. Therefore, since the capacitor 600 and the storage capacitor 70 are manufactured on the same occasion as described above, it is possible to prevent the manufacturing process from being prolonged and complicated and advanced as compared with the case where each of them is manufactured separately. It becomes possible.

  Furthermore, in the present embodiment, the fixed potential side electrode 610 is provided on the upper layer side of the pixel potential side electrode 620, so that an electromagnetic adverse effect is exerted on the pixel potential side electrode 620 from the outermost surface side of the TFT array substrate 10. It can function as a shield layer that prevents it from reaching (in other words, electromagnetic noise is generated in the potential of the pixel potential side electrode 620).

  In FIG. 6, the power supply terminal 102c is formed of the same film as the data line 6a. That is, similarly to the data line 6a, the power supply terminal 102c is formed as a film having a two-layer structure of a layer made of conductive polysilicon in the lower layer and a layer containing aluminum in the upper layer. The power supply terminal 102 c is formed so that a part thereof is exposed from the opening 810 opened in the capacitor insulating film 75 and the second interlayer insulating film 42. The opening 810 is formed by performing wet etching on a predetermined region in the capacitor insulating film 75 and the second interlayer insulating film 41.

  The power supply terminal 102c is formed as one of the plurality of external circuit connection terminals 102 (see FIG. 1).

  When the liquid crystal device according to the present embodiment is driven, a power circuit provided outside is electrically connected to a portion of the power terminal 102c exposed from the opening 810, so that the common potential LCCOM is connected to the power circuit. (See FIG. 3) is supplied to the power supply terminal 102c (and the transistor 500 and further the common potential line 91 through the power supply terminal 102c).

  In FIG. 6, the transistor 500 includes a semiconductor layer 510 and a gate electrode 520. The semiconductor layer 510 is an example of the “first semiconductor layer” according to the present invention.

  The semiconductor layer 510 is formed of the same film as the semiconductor layer 1a described above with reference to FIG. 5 (that is, a polysilicon film disposed on the base insulating film 12), and includes a channel region 511 and a high concentration source region 513. , A high concentration drain region 514, a low concentration source region 515, and a low concentration drain region 516. That is, the transistor 500 has an LDD structure like the pixel switching TFT 30. The high concentration source region 513 is electrically connected to the power supply terminal 102 c through a contact hole 86 opened in the first interlayer insulating film 41. The high concentration drain region 514 is electrically connected to the common potential line 91 through a contact hole 87 formed in the first interlayer insulating film 41. The common potential line 91 is electrically connected to the fixed potential side electrode 610 of the capacitor 600 through the contact hole 89. In other words, the high concentration drain region 514 is electrically connected to the fixed potential side electrode 610 through the contact hole 87, the common potential line 91, and the contact hole 89.

  The high concentration source region 513 and the high concentration drain region 514 are formed on the opposite side to the channel region 511. The low concentration source region 515 is formed between the channel region 511 and the high concentration source region 513. The low concentration drain region 516 is formed between the channel region 511 and the high concentration drain region 514. The high concentration source region 513, the high concentration drain region 514, the low concentration source region 515, and the low concentration drain region 516 are impurity regions formed by implanting impurities into the semiconductor layer 510 by impurity implantation. The low-concentration source region 515 and the low-concentration drain region 516 are formed as low-concentration impurity regions with fewer impurities than the high-concentration source region 513 and the high-concentration drain region 514, respectively. Note that the transistor 500 may have an offset structure in which impurities are not implanted into the low-concentration source region 515 and the low-concentration drain region 516, or impurities are implanted at a high concentration using the gate electrode as a mask. It may be a self-aligned type that forms a concentration drain region.

  In this embodiment, the high-concentration source region 513, the high-concentration drain region 514, the low-concentration source region 515, and the low-concentration drain region 516 are doped with N-type impurity ions such as phosphorus (P) ions, The transistor 500 is formed as an N-channel TFT.

  The gate electrode 520 is formed of the same film as the gate electrode 3a described above with reference to FIG. 5 (in other words, the same film as the data line 6a). That is, the gate electrode 520 is formed as a film having a two-layer structure in which a lower layer is made of conductive polysilicon and an upper layer is a layer containing aluminum. The gate electrode 520 is disposed on the upper layer side of the semiconductor layer 510 with the first interlayer insulating film 41 interposed therebetween, and is formed to face the channel region 520. A portion of the first interlayer insulating film 41 formed between the channel region 511 and the gate electrode 520 in the stacked structure on the TFT array substrate 10 functions as a gate insulating film that insulates between the gate electrode 520 and the channel region 511. To do.

  Note that the gate electrode 520 is electrically connected to the power supply potential line 95 described above with reference to FIG. 3, and is configured to be supplied with the high potential power supply potential VDD during the operation of the liquid crystal device. .

  Thus, in this embodiment, in particular, the transistor 500 includes the semiconductor layer 510 formed from the same film as the semiconductor layer 1a constituting the TFT 30, and the gate electrode 520 formed from the same film as the gate electrode 3a constituting the TFT 30. And a part of the first interlayer insulating film 41 disposed as a gate insulating film between the semiconductor layer 510 and the gate electrode 520. Therefore, the transistor 500 and the TFT 30 can be manufactured at the same opportunity in the manufacturing process. Accordingly, it is possible to prevent the manufacturing process from being prolonged and complicated and advanced, as compared with the case where each of them is manufactured separately.

  In FIG. 6, the common potential line 91 is formed of the same film as the data line. That is, the common potential line 91 is formed as a film having a two-layer structure of a layer made of conductive polysilicon in the lower layer and a layer containing aluminum in the upper layer. As shown in FIG. 3, the common potential line 91 is routed from the transistor 500 to the capacitor 600 in the peripheral region on the TFT array substrate 10. The common potential line 91 is electrically connected to the high concentration drain region 514 of the transistor 500 through the contact hole 87 and electrically connected to the fixed potential side electrode 610 of the transistor 600 through the contact hole 89. Yes.

  3 and 6, in the present embodiment, as described above, the source (ie, the high concentration source region 513) is electrically connected to the power supply terminal 102c and the drain (ie, the high concentration drain region 514). Includes a transistor 500 electrically connected to the fixed potential side electrode 610. In other words, the transistor 500 is capable of switching control of electrical connection between the power supply terminal 102c made of a film containing aluminum and the fixed potential side electrode 610 made of an ITO film. Therefore, in the manufacturing process, the power supply terminal 102c and the fixed potential side electrode 610 are electrically disconnected by the transistor 500 that is turned off, and the power supply terminal 102c and the fixed voltage are fixed by the transistor 500 that is turned on during driving. The potential side electrodes 610 can be electrically connected. In other words, in this embodiment, in the manufacturing process, the power source potential VDD is not supplied to the gate electrode 520, so that the transistor 500 is turned off. As a result, the power source terminal 102c and the fixed potential side electrode 610 are insulated and driven. In some cases, the power supply potential VDD is supplied to the gate electrode 520, whereby the transistor 500 is turned on. As a result, the power supply terminal 102c and the fixed potential side electrode 610 are electrically connected.

  Accordingly, in the manufacturing process, in the state where the fixed potential side electrode 610 made of the ITO film and the power supply terminal 102c made of the film containing aluminum are electrically connected to each other, the wet processing step (for example, for opening the opening 810). The power supply terminal 102c and the fixed potential side electrode 610 are simultaneously exposed to a processing solution such as an etching solution or a resist stripping solution used in a wet etching process or a patterning process of the pixel electrode 9a and the fixed potential side electrode 610). Can be prevented. Accordingly, it is possible to prevent the occurrence of galvanic corrosion that may occur when the power supply terminal 102c and the fixed potential side electrode 610 are simultaneously exposed to the processing liquid in a state where the power supply terminal 102c and the fixed potential side electrode 610 are electrically connected. . In other words, according to the liquid crystal device according to the present embodiment, in the wet processing step, the power supply terminal 102c made of a film containing aluminum and the fixed potential side electrode 610 made of an ITO film are mutually connected by the transistor 500 turned off. Since they are insulated, little or preferably no electrical corrosion occurs even when the power terminal 102c and the fixed potential side electrode 610 are simultaneously exposed to a processing solution such as an etching solution or a resist stripping solution.

  As described above, according to the liquid crystal device according to the present embodiment, it is possible to prevent the occurrence of electrolytic corrosion in the wet treatment process and to perform high-quality display.

  In the present embodiment, the common potential LCCOM is configured to have an intermediate potential between the high potential side power supply potential VDD and the low potential side power supply potential VSS. However, for example, the common potential LCCOM is changed to the high potential side power supply potential VSS. You may comprise so that it may have a potential equal to either VDD or the low potential side power supply potential VSS. When the common potential LCCOM has a potential equal to the high-potential power supply potential VDD, unlike the above-described embodiment, the transistor 500 is formed as a P-channel transistor, and the low-potential power supply is connected to the gate of the transistor 500. It is preferable that the potential VSS be supplied. When the common potential LCCOM has the same potential as the low potential side power supply potential VSS, the transistor 500 is formed as an N-channel transistor as in the above-described embodiment, and the transistor 500 has a gate at the gate. The high potential side power supply potential VDD may be supplied. In any case, the transistor 500 can surely electrically disconnect between the power supply terminal 102c and the fixed potential side electrode 610 in the manufacturing process, and can also be reliably connected to the power supply terminal 102c and the fixed potential side electrode 610 during driving. It is possible to securely connect the gaps.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described.

  FIG. 7 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 7, a projector 1100 includes a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  In addition, since light corresponding to each primary color of R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 7, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic device Examples include a notebook, a calculator, a word processor, a workstation, a videophone, a POS terminal, and a device equipped with a touch panel. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

It is a top view which shows the whole structure of the liquid crystal device which concerns on 1st Embodiment. It is H-H 'sectional drawing of FIG. 1 is a block diagram illustrating an electrical configuration of a liquid crystal device according to a first embodiment. It is a top view of the pixel part of the liquid crystal device concerning a 1st embodiment. FIG. 5 is a cross-sectional view taken along the line A-A ′ of FIG. 4. It is sectional drawing which shows the structure which concerns on the connection of the capacitor | condenser electrically connected to the data line, and a power supply terminal. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1a ... Semiconductor layer, 1a '... Channel region, 1b ... Data line side LDD region, 1c ... Pixel electrode side LDD region, 1d ... Data line side source / drain region, 1e ... Pixel electrode side source / drain region, 3a ... Gate electrode, 6a ... Data line, 9a ... Pixel electrode, 10 ... TFT array substrate, 10a ... Image display area, 11 ... Scanning line, 12 ... Base insulating film, 30 ... TFT, 71 ... Capacitance electrode, 60 ... Relay electrode, 75 ... Capacitance Insulating film, 91 ... Common potential line, 95 ... Power supply potential line, 102 ... External circuit connection terminal, 102c ... Power supply terminal, 171 ... Image signal line, 500 ... Transistor, 510 ... Semiconductor layer, 511 ... Channel region, 513 ... High Concentration source region, 514 ... High concentration drain region, 515 ... Low concentration source region, 516 ... Low concentration drain region, 520 ... Gate electrode, 600 ... Condensate , 610 ... fixed-potential-side electrode, 620 ... pixel-potential-side electrode, 810 ... opening

Claims (6)

A plurality of pixel electrodes;
Forming at least part of one wiring, electrode, or electronic element electrically connected to the plurality of pixel electrodes, and a conductive portion made of the same film as the plurality of pixel electrodes;
Provided in a peripheral region located around the pixel region in which the plurality of pixel electrodes are arranged on a lower layer side through an insulating film than the pixel electrode, and at least partly from an opening formed in the insulating film The exposed terminal,
A first transistor having a source electrically connected to the terminal and a drain electrically connected to the conductive portion;
A constant potential line for supplying a constant potential is provided.
The electro-optical device , wherein the gate of the first transistor is electrically connected to the constant potential line . A plurality of pixel electrodes;
Forming at least part of one wiring, electrode, or electronic element electrically connected to the plurality of pixel electrodes, and a conductive portion made of the same film as the plurality of pixel electrodes;
Provided in a peripheral region located around the pixel region in which the plurality of pixel electrodes are arranged on a lower layer side through an insulating film than the pixel electrode, and at least partly from an opening formed in the insulating film The exposed terminal,
A first transistor having a source electrically connected to the terminal and a drain electrically connected to the conductive portion;
A data line provided in the pixel region and supplying an image signal to the pixel electrode;
An additional capacitor that includes the conductive portion as one of the pair of first capacitor electrodes and is electrically connected to the data line;
You wherein electric optical device that comprises a. A second capacitor electrode provided on the lower layer side of the pixel electrode so as to face the pixel electrode via a capacitor insulating film;
The electro-optical device according to claim 2 , wherein the other first capacitor electrode and the second capacitor electrode of the pair of first capacitor electrodes are made of the same film. A plurality of pixel electrodes;
Forming at least part of one wiring, electrode, or electronic element electrically connected to the plurality of pixel electrodes, and a conductive portion made of the same film as the plurality of pixel electrodes;
Provided in a peripheral region located around the pixel region in which the plurality of pixel electrodes are arranged on a lower layer side through an insulating film than the pixel electrode, and at least partly from an opening formed in the insulating film The exposed terminal,
A first transistor having a source electrically connected to the terminal and a drain electrically connected to the conductive portion;
Provided corresponding to said pixel electrode, and a second transistor for controlling switching of the pixel electrode,
Wherein the first semiconductor layer and the second semiconductor layer constituting the second transistor constituting the first transistor, to that electric-optical device, comprising the same film from one another. Each of the pixel electrode and the conductive portion is made of an ITO film,
The terminal is equipped with an electro-optic device according to any one of claims 1, characterized in that it comprises aluminum 4. An electronic device characterized by being provided with the electro-optical device according to claim 1, any one of 5.

Images