JP2010205937A5 - - Google Patents

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Publication number
JP2010205937A5
JP2010205937A5 JP2009049922A JP2009049922A JP2010205937A5 JP 2010205937 A5 JP2010205937 A5 JP 2010205937A5 JP 2009049922 A JP2009049922 A JP 2009049922A JP 2009049922 A JP2009049922 A JP 2009049922A JP 2010205937 A5 JP2010205937 A5 JP 2010205937A5
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JP
Japan
Prior art keywords
light
gas
layer
emitting
forming
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JP2009049922A
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English (en)
Japanese (ja)
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JP5366080B2 (ja
JP2010205937A (ja
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Priority claimed from JP2009049922A external-priority patent/JP5366080B2/ja
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Publication of JP2010205937A5 publication Critical patent/JP2010205937A5/ja
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Publication of JP5366080B2 publication Critical patent/JP5366080B2/ja
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JP2009049922A 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法 Expired - Fee Related JP5366080B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009049922A JP5366080B2 (ja) 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009049922A JP5366080B2 (ja) 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法

Publications (3)

Publication Number Publication Date
JP2010205937A JP2010205937A (ja) 2010-09-16
JP2010205937A5 true JP2010205937A5 (enExample) 2012-03-15
JP5366080B2 JP5366080B2 (ja) 2013-12-11

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JP2009049922A Expired - Fee Related JP5366080B2 (ja) 2009-03-03 2009-03-03 発光素子形成用複合基板、発光ダイオード素子、その製造方法

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JP (1) JP5366080B2 (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086840A (ja) * 2001-09-10 2003-03-20 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード
JP4269645B2 (ja) * 2001-11-05 2009-05-27 日亜化学工業株式会社 付活剤を含有した基板を用いた窒化物半導体ｌｅｄ素子、及び成長方法

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