JP2010199528A5 - - Google Patents

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Publication number
JP2010199528A5
JP2010199528A5 JP2009094065A JP2009094065A JP2010199528A5 JP 2010199528 A5 JP2010199528 A5 JP 2010199528A5 JP 2009094065 A JP2009094065 A JP 2009094065A JP 2009094065 A JP2009094065 A JP 2009094065A JP 2010199528 A5 JP2010199528 A5 JP 2010199528A5
Authority
JP
Japan
Prior art keywords
bonding wire
copper
core material
mass
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009094065A
Other languages
Japanese (ja)
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JP2010199528A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2009094065A priority Critical patent/JP2010199528A/en
Priority claimed from JP2009094065A external-priority patent/JP2010199528A/en
Priority to PCT/JP2009/065735 priority patent/WO2010087053A1/en
Priority to TW099102279A priority patent/TW201037777A/en
Publication of JP2010199528A publication Critical patent/JP2010199528A/en
Publication of JP2010199528A5 publication Critical patent/JP2010199528A5/ja
Pending legal-status Critical Current

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Claims (3)

集積回路素子の電極（ａ）と回路配線基板の導体配線（ｃ）をボールボンディング法によって接続するための線径（Ｌ）１２μｍ以上５０.８μｍ以下のボンディングワイヤ（Ｐ）であって、
芯材（１）が純度９９．９９質量％以上の銅からなり、その芯材（１）の外周全面に、金、白金、パラジウム、銀の１種以上による厚み（ｔ）０．０４〜０．０９μｍの被覆層（２）を形成したことを特徴とするボンディングワイヤ。 A bonding wire (P) having a wire diameter (L) of 12 μm or more and 50.8 μm or less for connecting the electrode (a) of the integrated circuit element and the conductor wiring (c) of the circuit wiring board by a ball bonding method,
The core material (1) is made of copper having a purity of 99.99% by mass or more, and the thickness (t) of at least one of gold, platinum, palladium, and silver is formed on the entire outer periphery of the core material (1) 0.04 to 0. A bonding wire, wherein a coating layer (2) of .09 μm is formed. 上記被覆層（２）をその融点が上記銅の融点より高いパラジウムとし、その厚み（ｔ）が０．０５〜０．０９μｍであることを特徴とする請求項１に記載のボンディングワイヤ。   The bonding wire according to claim 1, wherein the coating layer (2) is palladium whose melting point is higher than the melting point of the copper, and the thickness (t) is 0.05 to 0.09 µm. 上記芯材（１）の銅純度を９９．９９９質量％以上としたことを特徴とする請求項１又は２に記載のボンディングワイヤ The bonding wire according to claim 1 or 2 , wherein the copper purity of the core material (1) is 99.999 mass% or more.
JP2009094065A 2009-01-27 2009-04-08 Bonding wire Pending JP2010199528A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009094065A JP2010199528A (en) 2009-01-27 2009-04-08 Bonding wire
PCT/JP2009/065735 WO2010087053A1 (en) 2009-01-27 2009-09-09 Bonding wire
TW099102279A TW201037777A (en) 2009-01-27 2010-01-27 Bonding wire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009015265 2009-01-27
JP2009094065A JP2010199528A (en) 2009-01-27 2009-04-08 Bonding wire

Publications (2)

Publication Number Publication Date
JP2010199528A JP2010199528A (en) 2010-09-09
JP2010199528A5 true JP2010199528A5 (en) 2011-05-12

Family

ID=42395321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009094065A Pending JP2010199528A (en) 2009-01-27 2009-04-08 Bonding wire

Country Status (3)

Country Link
JP (1) JP2010199528A (en)
TW (1) TW201037777A (en)
WO (1) WO2010087053A1 (en)

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US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
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US8836136B2 (en) 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
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US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
CN103219247B (en) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 A kind of manufacture method of silver plated bonding copper wire
CN103219246B (en) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 A kind of manufacture method of plating the silver-plated two coating bonding brass wires of palladium
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US10043779B2 (en) 2015-11-17 2018-08-07 Invensas Corporation Packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
CN109411591B (en) * 2018-09-14 2020-09-18 汕头市骏码凯撒有限公司 Silver alloy wire for LED packaging and manufacturing method thereof
JP7412998B2 (en) * 2019-12-12 2024-01-15 ローム株式会社 Semiconductor device and semiconductor device manufacturing method

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