CN109411591B - Silver alloy wire for LED packaging and manufacturing method thereof - Google Patents
Silver alloy wire for LED packaging and manufacturing method thereof Download PDFInfo
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- CN109411591B CN109411591B CN201811071469.9A CN201811071469A CN109411591B CN 109411591 B CN109411591 B CN 109411591B CN 201811071469 A CN201811071469 A CN 201811071469A CN 109411591 B CN109411591 B CN 109411591B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a silver alloy wire for LED packaging and a manufacturing method thereof, wherein the silver alloy wire for LED packaging comprises a silver alloy bonding wire, a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer, the palladium content of the first mixed layer is more than 50% by weight, and the balance is high-melting-point metal; the second mixed layer contains more than 50% of high-melting-point metal by weight, and the balance is palladium. The silver alloy wire has certain solubility of the high-melting-point metal in the palladium, and the dissolution restricts the diffusion process of the palladium into the silver ball in the ball firing process, so that the palladium and the high-melting-point metal are uniformly distributed on the surface of the free air ball. On the other hand, because the densities of the palladium and the high-melting-point metal are higher than that of the silver, the palladium and the high-melting-point metal are preferentially concentrated at the bottom of the free air ball, so that the diffusion of the aluminum on the aluminum pad to the free air ball can be delayed, and the reliability of the product is improved.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to a silver alloy wire for LED packaging and a manufacturing method thereof.
Background
Bonding wires (bonding wires) are the main connection means for connecting a chip to an external package substrate (substrate) and/or a multilayer circuit board (PCB). The development trend of bonding wires is mainly products with fine wire diameter, long workshop life (floor life) and high linear axis length from the application direction; from the chemical composition, copper wires (including bare copper wires, palladium-plated copper wires and gold-flash palladium-plated copper wires) are mainly used to replace gold wires in the semiconductor field, and silver wires and silver alloy wires are used to replace gold wires in LED and partial IC packaging applications.
The main advantages of silver wires over gold wires are: the product cost is low, but the main problems of the early silver alloy are that the surface of the wire is easy to be vulcanized and oxidized, the wire bonding performance of the silver alloy wire and the high temperature and high humidity reliability (PCT, HAST) are influenced, in addition, the problem of serious electromigration is caused, the circuit short circuit failure is caused, and the reliability is low.
During the ball firing process (EFO) of the ball bond, the arc high voltage breaks down the shielding gas (95% nitrogen and 5% hydrogen) in the ball bond, emitting a large amount of heat. The end of the bonding wire is melted to form a round ball, i.e., a Free air ball (Free air ball), at the end of the bonding wire due to the surface tension, and palladium can be melted into the bulk of the silver alloy ball and disappear on the surface of FAB because palladium can form a solid solution with silver. Therefore, palladium is difficult to be uniformly distributed around FAB, especially cannot be enriched on the part of the FAB bottom contacted with the IC aluminum pad, but the enrichment of palladium in the area is beneficial to the reliability of a subsequent welding point.
The above problems can be improved by introducing palladium (Pd in an amount of 3-4%) into the silver wire, especially its high temperature, high humidity reliability (PCT, HAST) problem. However, the introduction of 3-4% palladium into silver alloy wires leads to increased conductivity and increased wire hardness, both of which are important for high-end IC packages, such as memory (memory) packages.
Disclosure of Invention
Features and advantages of the invention will be set forth in part in the description which follows, or may be obvious from the description, or may be learned by practice of the invention.
The invention provides a silver alloy wire for LED packaging with high reliability and low hardness and a manufacturing method thereof.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention provides a silver alloy wire for LED packaging, which comprises a silver alloy bonding wire, a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer, wherein the first mixed layer contains more than 50% by weight of palladium, and the balance is high-melting-point metal; the second mixed layer contains more than 50% of high-melting-point metal by weight, and the balance is palladium.
The thickness of the first mixed layer is 15-25 nanometers, and the thickness of the second mixed layer is 7-10 nanometers.
The thickness of the first mixed layer is 20 nm, and the thickness of the second mixed layer is 7 nm.
The silver alloy bonding wire comprises, by weight, less than 5ppm of oxygen, 8-100ppm of doping elements and the balance of silver, wherein the doping elements are one or a combination of more of calcium, copper, iron and silicon.
The high-melting-point metal is rhodium, ruthenium, iridium or platinum.
The invention also provides a manufacturing method of the silver alloy wire for LED packaging, which comprises the following steps:
s1, manufacturing a silver alloy bonding wire;
s2, plating palladium on the surface of the silver alloy bonding wire to form a palladium layer;
s3, plating high-melting-point metal on the outer surface of the palladium layer to form a high-melting-point metal layer;
s4, carrying out thermal diffusion treatment on the silver alloy bonding wire plated with the palladium layer and the high-melting-point metal layer to enable atoms between the palladium layer and the high-melting-point metal layer to diffuse mutually, so as to form a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer, and obtain a silver alloy wire; the first mixed layer contains more than 50% of palladium by weight, and the balance is high-melting-point metal; the second mixed layer contains more than 50% of high-melting-point metal by weight, and the balance is palladium.
The conditions of the thermal diffusion treatment in said step S4 are: the nitrogen is used as the annealing atmosphere, the effective length of the annealing furnace is 600mm, the temperature is between 500 ℃ and 700 ℃, and the wiring speed is 100 m/min.
The step of manufacturing the silver alloy bonding wire in the step S1 is as follows:
s11, adding a doping element into silver with oxygen content lower than 5ppm by weight, wherein the content of the doping element is 8-100ppm, the doping element is one or a combination of more of calcium, copper, iron and silicon, and the wire with the diameter of 6-8mm is obtained through a directional continuous drawing process;
s12, drawing the wire obtained in the step S11 to obtain a silver alloy bonding wire with the wire diameter of 15-50 microns;
the wire drawing comprises a plurality of times of wire drawing operations, wherein in the wire drawing process, the wire is subjected to more than one time of intermediate annealing, and nitrogen or Forming gas is adopted as an annealing atmosphere in the intermediate annealing;
and after the wire drawing is finished, carrying out final annealing on the silver alloy bonding wire, wherein nitrogen or Forming gas is adopted as an annealing atmosphere in the final annealing.
The thickness of the first mixed layer is 15-25 nanometers, and the thickness of the second mixed layer is 7-10 nanometers.
The high-melting-point metal is rhodium, ruthenium, iridium or platinum.
The invention has the beneficial effects that: on one hand, because the high-melting-point metal has certain solubility in the palladium, the process that the palladium diffuses into the silver ball in the ball burning process is restricted by the dissolution, so that the palladium and the high-melting-point metal are uniformly distributed on the surface of the free air ball; on the other hand, because the densities of the palladium and the high-melting-point metal are higher than that of the silver, the palladium and the high-melting-point metal are preferentially concentrated at the bottom of the free air ball, so that the diffusion of aluminum on the aluminum pad to the free air ball can be delayed, the reliability of the product is improved, the conductivity of the silver alloy wire is improved, and the hardness is greatly reduced.
Drawings
The advantages and realisation of the invention will be more apparent from the following detailed description, given by way of example, with reference to the accompanying drawings, which are given for the purpose of illustration only, and which are not to be construed in any way as limiting the invention, and in which:
fig. 1 is a schematic structural view of a silver alloy wire in an embodiment of the present invention.
Fig. 2 is a flow chart of manufacturing a silver alloy wire in the embodiment of the invention.
Detailed Description
As shown in fig. 1, the silver alloy wire for LED package according to the embodiment of the present invention includes a silver alloy bonding wire 10, a first mixed layer 20 coated outside the silver alloy bonding wire 10, and a second mixed layer 30 coated outside the first mixed layer 20.
The silver alloy bonding wire 10 has an oxygen content of less than 5ppm by weight, a doping element content of 8-100ppm by weight, and the balance of silver, wherein the purity of the silver is 4N. The doping element is one or the combination of more of calcium, copper, iron and silicon.
In the present embodiment, the first mixed layer 20 contains palladium in an amount of more than 50% by weight, and the remainder is a high-melting-point metal. The second mixed layer 30 contains more than 50% by weight of a high-melting-point metal, and the balance is palladium. On one hand, because the high-melting-point metal has certain solubility in the palladium, the process that the palladium diffuses into the silver ball in the ball burning process is restricted by the dissolution, so that the palladium and the high-melting-point metal are uniformly distributed on the surface of the free air ball; on the other hand, because the densities of the palladium and the high-melting-point metal are higher than that of the silver, the palladium and the high-melting-point metal are preferentially concentrated at the bottom of the free air ball, so that the diffusion of the aluminum on the aluminum pad to the free air ball can be delayed, and the reliability of the product is improved.
In addition, the functions of electromigration resistance, sulfuration resistance and reliability increase of palladium in the silver alloy bonding wire are represented by the functions of palladium on the surface and the interface. The invention utilizes the solubility of the high melting point metal in the palladium and the high melting point characteristic of the high melting point metal, and simultaneously leaves the palladium and the high melting point metal on the surface of a free air ball during ball bonding, thereby ensuring the reliability of the silver alloy wire, improving the conductivity of the silver alloy wire and greatly reducing the hardness.
The thickness of the first mixed layer 20 is 15 to 25 nm, and the thickness of the second mixed layer 30 is 7 to 10 nm.
In this example, the thickness of the first mixed layer was 20 nm, and the thickness of the second mixed layer was 7 nm.
The refractory metal is rhodium (Rh, 2236 deg.C), ruthenium (Ru, 2527 deg.C), iridium (Ir, 2720 deg.C) or platinum (Pt, 2045 deg.C).
As shown in fig. 2, the present invention also provides a method for manufacturing a silver alloy wire for LED package, comprising the following steps:
s1, manufacturing a silver alloy bonding wire;
s2, plating palladium on the surface of the silver alloy bonding wire to form a palladium layer;
s3, plating high-melting-point metal on the outer surface of the palladium layer to form a high-melting-point metal layer;
s4, carrying out thermal diffusion treatment on the silver alloy bonding wire plated with the palladium layer and the high-melting-point metal layer to enable atoms between the palladium layer and the high-melting-point metal layer to diffuse mutually, so as to form a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer, and obtain a silver alloy wire; the first mixed layer contains more than 50% of palladium by weight, and the balance is high-melting-point metal; the second mixed layer contains more than 50% of high-melting-point metal by weight, and the balance is palladium.
The step of manufacturing the silver alloy bonding wire in the step S1 is as follows:
s11, adding doping elements into the silver raw material with the oxygen content lower than 5ppm by weight, wherein the content of the doping elements is 8-100ppm, the doping elements are one or the combination of more of calcium, copper, iron and silicon, and obtaining the wire with the diameter of 6-8mm through a directional continuous drawing process;
s12, drawing the wire obtained in the step S11 to obtain a silver alloy bonding wire with the wire diameter of 15-50 microns;
the wire drawing comprises a plurality of times of wire drawing operations, wherein in the wire drawing process, the wire is subjected to more than one time of intermediate annealing, and nitrogen or Forming gas is adopted as an annealing atmosphere in the intermediate annealing;
and after the wire drawing is finished, carrying out final annealing on the silver alloy bonding wire, wherein nitrogen or Forming gas is adopted as an annealing atmosphere in the final annealing.
In step S2, palladium is uniformly coated on the surface of the silver alloy bonding wire by electroplating.
In step S3, a high melting point metal is uniformly applied to the outer surface of the palladium layer by means of electroplating or electroless plating.
The conditions of the thermal diffusion treatment in step S4 are: the nitrogen is used as the annealing atmosphere, the effective length of the annealing furnace is 600mm, the temperature is between 500 ℃ and 700 ℃, and the wiring speed is 100 m/min.
A specific example of the method for manufacturing the silver alloy wire for LED encapsulation according to the present invention is given below.
The first embodiment is as follows:
s1, selecting 4N silver with oxygen content lower than 5ppm by weight, adding 8ppm of calcium (Ca), and obtaining a wire rod with the diameter of 6-8mm through an oriented continuous drawing process; drawing the obtained wire to obtain a silver alloy bonding wire with the diameter of 23 microns; in the wire drawing process, performing primary intermediate annealing on the wire, wherein nitrogen is used as an annealing atmosphere in the intermediate annealing; after the wire drawing is finished, carrying out final annealing on the silver alloy bonding wire, wherein nitrogen is used as an annealing atmosphere in the final annealing;
s2, plating palladium on the surface of the silver alloy bonding wire, wherein the thickness of the palladium layer is 25 nanometers;
s3, chemically plating ruthenium on the outer surface of the palladium layer (ruthenium flash process), wherein in the chemical ruthenium plating, ruthenium chloride is used as a silver source, the concentration of the ruthenium chloride is 0.02M, Hydrazine (Hydrazine) is used as a reducing agent, the concentration of the Hydrazine is 0.009M, ammonia water (NH3H2O) is used as a main ion complexing agent, the concentration of the ammonia water is 2.0M, NaOH is used as a pH regulator, flash plating is carried out at 60 ℃, the length of a flash plating tank is 2 meters, and the flash plating time is kept at 6 seconds, so that a ruthenium layer with the thickness of 8nm is obtained;
s4, after the ruthenium flash plating is finished, performing thermal diffusion treatment on the silver alloy bonding wire plated with the palladium layer and the high-melting-point metal layer, wherein nitrogen is adopted as an annealing atmosphere in the thermal diffusion treatment, the effective length of an annealing furnace is 600mm, the thermal diffusion temperature is 500-700 ℃, and the wiring speed is 100 m/min; atoms between ruthenium and palladium are diffused mutually to finally obtain a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer to obtain a silver alloy wire; the first mixed layer contains more than 50% of palladium by weight, and the balance is high-melting-point metal; the content of the high-melting-point metal in the second mixed layer is more than 50% by weight, and the balance is palladium; the thickness of the first mixed layer was 20 nm, and the thickness of the second mixed layer was 7 nm.
Two conventional methods for making silver alloy bonding wires are given below, in comparison to example one.
Comparative example one:
s1, adding 4.0% of palladium and 8ppm of Ca into 4N silver (with the purity of 99.99%) by weight, and performing an oriented continuous drawing process to obtain a wire rod with the diameter of 8 mm;
s2, drawing the obtained wire to obtain a silver alloy bonding wire with the diameter of 23um, carrying out primary intermediate annealing on the wire in the wire drawing process, wherein the intermediate annealing is carried out when the wire is drawn to the diameter of 0.0877mm, nitrogen is adopted as an annealing atmosphere in the annealing process, the effective length of an annealing furnace is 600mm, the annealing temperature is 600 ℃, and the annealing rate is 90 m/min;
s3, after wire drawing is completed, final annealing is carried out on the silver alloy bonding wire, nitrogen is used as an annealing atmosphere in the annealing process, the effective length of the annealing furnace is 600mm, the annealing temperature is 450 ℃, the annealing speed is 100m/min, and the tension of the final annealing section of the wire is set to be 0.3 g.
Comparative example two:
s1, adding 8ppm of doping element Ca into 4N silver with the oxygen content lower than 5ppm by weight, and obtaining a wire rod with the diameter of 6-8mm through an oriented continuous drawing process; then, drawing the wire for multiple times (rough drawing, small drawing, fine drawing, micro drawing and other processes) to obtain the 23 micron silver alloy bonding wire; and respectively annealing the wire rods by taking nitrogen as an annealing atmosphere in the wire drawing process and after the wire drawing is finished.
And S2, electroplating palladium on the surface of the silver alloy bonding wire, wherein the thickness of the palladium layer is 25 nanometers.
S3, after palladium electroplating is completed, the bonding wire is subjected to heat treatment at the temperature of 450-650 ℃ by taking nitrogen as annealing atmosphere, atoms between palladium and silver are diffused mutually, a mixed layer coated outside the silver alloy bonding wire is obtained, the content of palladium in the mixed layer is higher than 50%, the balance is silver, and the thickness of the mixed layer is 20 nanometers.
Table 1 below is a comparison of the resistivity of the silver alloy wires fabricated using example one, comparative example one and comparative example two:
table 2 below is a comparison of the hardness of the silver alloy wires manufactured by using the example one, the comparative example one and the comparative example two:
the three wires were sectioned along the central axis and then Vicker hardness measurements were made on the section of the wire. The readings for each set were averaged over ten measurements and were held for 15 seconds at 1 gram force using an FM-810e micro Vickers hardness tester and the hardness was determined by the size of the indentation and the results are as follows.
Table 3 below is a comparison of the reliability of the silver alloy wires manufactured by using the example one, the comparative example one, and the comparative example two:
and performing ball bonding of a first welding point by using three wires (23 microns), and then performing glue pouring and packaging. The High Temperature storage Test (HTS) is carried out for 1000 hours at the Temperature of 200 ℃, the potting adhesive is stripped, and then the shear strength Test of the first welding spot is carried out to evaluate the performances of the three wires on the High Temperature storage reliability. Shear strengths of less than 5 grams are poor, between 5 and 8 grams are good, and greater than 8 grams are excellent.
| Experiment of | Example one | Comparative example 1 | Comparative example 1 |
| Shear strength | Superior food | Superior food | Difference (D) |
According to the invention, the first mixed layer and the second mixed layer are arranged on the surface of the silver alloy bonding wire, the palladium content of the first mixed layer is more than 50% by weight, and the balance is high-melting-point metal; on one hand, the high-melting-point metal has certain solubility in palladium, and the dissolution restricts the diffusion process of palladium into a silver ball in the ball burning process, so that the palladium and the high-melting-point metal are uniformly distributed on the surface of the free air ball. On the other hand, because the density of palladium and the high-melting-point metal is higher than that of silver, the palladium and the high-melting-point metal are preferentially concentrated at the bottom of the free air ball, so that the diffusion of aluminum on the aluminum pad to the free air ball (Freeair ball) can be delayed, and the reliability of the product is improved. The invention also greatly reduces the total consumption of palladium, concentrates palladium and high-melting point metal on the surface of the wire rod, reduces the resistivity of the wire rod body and reduces the hardness of the wire rod and the free air ball (Freeair ball).
While the preferred embodiments of the present invention have been illustrated in the accompanying drawings, those skilled in the art will appreciate that various modifications can be made to the present invention without departing from the scope and spirit of the invention. For instance, features illustrated or described as part of one embodiment, can be used with another embodiment to yield a still further embodiment. The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the present invention, which is defined in the appended claims.
Claims (8)
1. The silver alloy wire for LED packaging is characterized by comprising a silver alloy bonding wire, a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer, wherein the palladium content of the first mixed layer is more than 50% by weight, and the balance is high-melting-point metal; the second mixed layer contains more than 50% of high-melting-point metal by weight and the balance of palladium, and the high-melting-point metal is rhodium, ruthenium, iridium or platinum.
2. The silver alloy wire for LED encapsulation according to claim 1, wherein the thickness of the first mixed layer is 15 to 25 nm, and the thickness of the second mixed layer is 7 to 10 nm.
3. The silver alloy wire for LED encapsulation according to claim 2, wherein the thickness of the first mixed layer is 20 nm, and the thickness of the second mixed layer is 7 nm.
4. The silver alloy wire for LED packaging according to claim 1, wherein the silver alloy bonding wire has an oxygen content of less than 5ppm by weight, a doping element content of 8-100ppm by weight, and the balance being silver, wherein the doping element is one or a combination of more of calcium, copper, iron and silicon.
5. A manufacturing method of a silver alloy wire for LED packaging is characterized by comprising the following steps:
s1, manufacturing a silver alloy bonding wire;
s2, plating palladium on the surface of the silver alloy bonding wire to form a palladium layer;
s3, plating high-melting-point metal on the outer surface of the palladium layer to form a high-melting-point metal layer;
s4, carrying out thermal diffusion treatment on the silver alloy bonding wire plated with the palladium layer and the high-melting-point metal layer to enable atoms between the palladium layer and the high-melting-point metal layer to diffuse mutually, so as to form a first mixed layer coated outside the silver alloy bonding wire and a second mixed layer coated outside the first mixed layer, and obtain a silver alloy wire; the first mixed layer contains more than 50% of palladium by weight, and the balance is high-melting-point metal; the second mixed layer contains more than 50% of high-melting-point metal by weight and the balance of palladium, and the high-melting-point metal is rhodium, ruthenium, iridium or platinum.
6. The method of manufacturing a silver alloy wire for LED package according to claim 5, wherein the conditions of the heat diffusion treatment in step S4 are: the nitrogen is used as the annealing atmosphere, the effective length of the annealing furnace is 600mm, the temperature is between 500 ℃ and 700 ℃, and the wiring speed is 100 m/min.
7. The method for manufacturing the silver alloy wire for the LED package according to claim 5, wherein the step of manufacturing the silver alloy bonding wire in the step S1 is:
s11, adding a doping element into silver with oxygen content lower than 5ppm by weight, wherein the content of the doping element is 8-100ppm, the doping element is one or a combination of more of calcium, copper, iron and silicon, and the wire with the diameter of 6-8mm is obtained through a directional continuous drawing process;
s12, drawing the wire obtained in the step S11 to obtain a silver alloy bonding wire with the wire diameter of 15-50 microns;
the wire drawing comprises a plurality of times of wire drawing operations, wherein in the wire drawing process, the wire is subjected to more than one time of intermediate annealing, and nitrogen is adopted as an annealing atmosphere in the intermediate annealing;
and after the wire drawing is finished, performing final annealing on the silver alloy bonding wire, wherein nitrogen is used as an annealing atmosphere in the final annealing.
8. The method of manufacturing a silver alloy wire for LED encapsulation according to claim 5, wherein the thickness of the first mixed layer is 15 to 25 nm, and the thickness of the second mixed layer is 7 to 10 nm.
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| CN107068572A (en) * | 2017-04-07 | 2017-08-18 | 中国科学院兰州化学物理研究所 | A kind of method for solving silver and the oxidizable problem of silver alloy bonding wire |
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