JP2010198911A - 光電子増倍管 - Google Patents
光電子増倍管 Download PDFInfo
- Publication number
- JP2010198911A JP2010198911A JP2009042393A JP2009042393A JP2010198911A JP 2010198911 A JP2010198911 A JP 2010198911A JP 2009042393 A JP2009042393 A JP 2009042393A JP 2009042393 A JP2009042393 A JP 2009042393A JP 2010198911 A JP2010198911 A JP 2010198911A
- Authority
- JP
- Japan
- Prior art keywords
- end side
- electron
- substrate
- photomultiplier tube
- dynodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/243—Dynodes consisting of a piling-up of channel-type dynode plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/22—Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind
Landscapes
- Electron Tubes For Measurement (AREA)
- Measurement Of Radiation (AREA)
Abstract
【解決手段】光電子増倍管1は、互いに対向して配置され、それぞれの対向面20a,40aが絶縁材料からなる基板20,40と、基板20,40と共に筐体を構成する基板30と、基板40の対向面40a上の一端側から他端側に向けて順に離間して配列されているダイノードと、第1段のダイノードから一端側に離間して設けられる光電面22と、最終段のダイノードから他端側に離間して設けられる陽極部32とを備える光電子増倍管であって、基板20の対向面20aは各ダイノードを覆うように形成され、該対向面20aには各ダイノードのそれぞれに対向する部位に、互いに電気的に独立したダイノードに対して同電位に設定された複数の導電膜が設けられている。
【選択図】図2
Description
Claims (4)
- 互いに対向して配置され、それぞれの対向面が絶縁材料からなる第1及び第2の基板と、
第1及び第2の基板と共に筐体を構成する側壁部と、
前記第1の基板の前記対向面上の一端側から他端側に向けて順に離間して配列されており、それぞれが該対向面に交差する方向に延びる2次電子面を有する複数段の電子増倍部と、
前記一端側に前記電子増倍部から離間して設けられ、外部からの入射光を光電子に変換して、前記光電子を放出する光電面と、
前記他端側に前記電子増倍部から離間して設けられ、前記電子増倍部によって増倍された電子を信号として取り出す陽極部と、
を備える光電子増倍管であって、
前記第2の基板の前記対向面は、前記複数の電子増倍部を覆うように形成され、
該対向面には、前記複数の電子増倍部のそれぞれに対向する部位に、互いに電気的に独立し、かつそれぞれの対向する前記電子増倍部に対して同電位に設定された複数の導電部材が前記対向面に沿って設けられている、
ことを特徴とする光電子増倍管。 - 前記複数の導電部材は、それぞれ、前記他端側の端部が対向する前記電子増倍部の前記他端側の端部よりも前記他端側に突出して形成されている、
ことを特徴とする請求項1記載の光電子増倍管。 - 前記複数の導電部材は、それぞれ、前記一端側の端部が対向する前記電子増倍部の前記一端側の端部よりも前記他端側に位置するように形成されている、
ことを特徴とする請求項1又は2記載の光電子増倍管。 - 前記複数の導電部材は、前記第2の基板に設けられた複数の給電部に接続され、前記複数の電子増倍部は、それぞれ対向する導電部材に電気的に接続されることにより前記複数の給電部から給電される、
ことを特徴とする請求項1〜3のいずれか1項に記載の光電子増倍管。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042393A JP5290805B2 (ja) | 2009-02-25 | 2009-02-25 | 光電子増倍管 |
US12/709,682 US8115386B2 (en) | 2009-02-25 | 2010-02-22 | Photomultiplier tube |
CN201010123813.1A CN101814414B (zh) | 2009-02-25 | 2010-02-25 | 光电倍增管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042393A JP5290805B2 (ja) | 2009-02-25 | 2009-02-25 | 光電子増倍管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010198911A true JP2010198911A (ja) | 2010-09-09 |
JP5290805B2 JP5290805B2 (ja) | 2013-09-18 |
Family
ID=42621630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009042393A Active JP5290805B2 (ja) | 2009-02-25 | 2009-02-25 | 光電子増倍管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8115386B2 (ja) |
JP (1) | JP5290805B2 (ja) |
CN (1) | CN101814414B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8492694B2 (en) | 2010-10-14 | 2013-07-23 | Hamamatsu Photonics K.K. | Photomultiplier tube having a plurality of stages of dynodes with recessed surfaces |
US8354791B2 (en) | 2010-10-14 | 2013-01-15 | Hamamatsu Photonics K.K. | Photomultiplier tube |
US8587196B2 (en) | 2010-10-14 | 2013-11-19 | Hamamatsu Photonics K.K. | Photomultiplier tube |
EP2557589B1 (en) | 2011-06-03 | 2014-05-14 | Hamamatsu Photonics K.K. | Electron multiplier and photomultiplier tube containing same |
EP3021351A1 (de) * | 2014-11-17 | 2016-05-18 | Bayer Technology Services GmbH | Sekundärelektronenvervielfacher und verfahren zum herstellen eines solchen |
EP3408861A4 (en) | 2016-01-29 | 2019-08-28 | Shenzhen Genorivision Technology Co., Ltd. | PHOTOVREW MAKER AND METHOD FOR THE PRODUCTION THEREOF |
CN114157279B (zh) * | 2021-11-19 | 2022-06-28 | 北京是卓科技有限公司 | 一种门控pmt电路及其控制方法和光电探测器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10208689A (ja) * | 1997-01-27 | 1998-08-07 | Hamamatsu Photonics Kk | 電子管 |
JP2001196023A (ja) * | 2000-01-06 | 2001-07-19 | Hamamatsu Photonics Kk | 光電子増倍管 |
WO2005078760A1 (ja) * | 2004-02-17 | 2005-08-25 | Hamamatsu Photonics K. K. | 光電子増倍管及びその製造方法 |
WO2007017984A1 (ja) * | 2005-08-10 | 2007-02-15 | Hamamatsu Photonics K.K. | 光電子増倍管 |
JP2007048712A (ja) * | 2005-08-12 | 2007-02-22 | Hamamatsu Photonics Kk | 光電子増倍管 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB503211A (en) | 1936-07-04 | 1939-04-03 | Zeiss Ikon Ag | Improvements in or relating to secondary electron multipliers |
US3225239A (en) | 1960-11-15 | 1965-12-21 | Bendix Corp | Electron multiplier |
US4115719A (en) * | 1976-10-04 | 1978-09-19 | Rca Corporation | Electron multiplier with high energy electron filter |
US5264693A (en) | 1992-07-01 | 1993-11-23 | The United States Of America As Represented By The Secretary Of The Navy | Microelectronic photomultiplier device with integrated circuitry |
US5568013A (en) | 1994-07-29 | 1996-10-22 | Center For Advanced Fiberoptic Applications | Micro-fabricated electron multipliers |
US6384519B1 (en) * | 1996-10-30 | 2002-05-07 | Nanosciences Corporation | Micro-dynode integrated electron multiplier |
US7049747B1 (en) | 2003-06-26 | 2006-05-23 | Massachusetts Institute Of Technology | Fully-integrated in-plane micro-photomultiplier |
GB2409927B (en) | 2004-01-09 | 2006-09-27 | Microsaic Systems Ltd | Micro-engineered electron multipliers |
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2009
- 2009-02-25 JP JP2009042393A patent/JP5290805B2/ja active Active
-
2010
- 2010-02-22 US US12/709,682 patent/US8115386B2/en active Active
- 2010-02-25 CN CN201010123813.1A patent/CN101814414B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10208689A (ja) * | 1997-01-27 | 1998-08-07 | Hamamatsu Photonics Kk | 電子管 |
JP2001196023A (ja) * | 2000-01-06 | 2001-07-19 | Hamamatsu Photonics Kk | 光電子増倍管 |
WO2005078760A1 (ja) * | 2004-02-17 | 2005-08-25 | Hamamatsu Photonics K. K. | 光電子増倍管及びその製造方法 |
WO2007017984A1 (ja) * | 2005-08-10 | 2007-02-15 | Hamamatsu Photonics K.K. | 光電子増倍管 |
JP2007048712A (ja) * | 2005-08-12 | 2007-02-22 | Hamamatsu Photonics Kk | 光電子増倍管 |
Also Published As
Publication number | Publication date |
---|---|
US8115386B2 (en) | 2012-02-14 |
CN101814414A (zh) | 2010-08-25 |
US20100213837A1 (en) | 2010-08-26 |
JP5290805B2 (ja) | 2013-09-18 |
CN101814414B (zh) | 2014-03-26 |
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