JP2010157535A5 - - Google Patents

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Publication number
JP2010157535A5
JP2010157535A5 JP2008333510A JP2008333510A JP2010157535A5 JP 2010157535 A5 JP2010157535 A5 JP 2010157535A5 JP 2008333510 A JP2008333510 A JP 2008333510A JP 2008333510 A JP2008333510 A JP 2008333510A JP 2010157535 A5 JP2010157535 A5 JP 2010157535A5
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JP
Japan
Prior art keywords
semiconductor laser
carrier
bonding region
thermal resistance
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008333510A
Other languages
English (en)
Japanese (ja)
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JP2010157535A (ja
JP5388566B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008333510A priority Critical patent/JP5388566B2/ja
Priority claimed from JP2008333510A external-priority patent/JP5388566B2/ja
Priority to PCT/JP2009/071266 priority patent/WO2010074044A1/ja
Publication of JP2010157535A publication Critical patent/JP2010157535A/ja
Priority to US13/051,274 priority patent/US20110164634A1/en
Publication of JP2010157535A5 publication Critical patent/JP2010157535A5/ja
Application granted granted Critical
Publication of JP5388566B2 publication Critical patent/JP5388566B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008333510A 2008-12-26 2008-12-26 半導体レーザ装置 Expired - Fee Related JP5388566B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008333510A JP5388566B2 (ja) 2008-12-26 2008-12-26 半導体レーザ装置
PCT/JP2009/071266 WO2010074044A1 (ja) 2008-12-26 2009-12-22 半導体レーザ装置
US13/051,274 US20110164634A1 (en) 2008-12-26 2011-03-18 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008333510A JP5388566B2 (ja) 2008-12-26 2008-12-26 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2010157535A JP2010157535A (ja) 2010-07-15
JP2010157535A5 true JP2010157535A5 (cg-RX-API-DMAC7.html) 2011-12-08
JP5388566B2 JP5388566B2 (ja) 2014-01-15

Family

ID=42287653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008333510A Expired - Fee Related JP5388566B2 (ja) 2008-12-26 2008-12-26 半導体レーザ装置

Country Status (3)

Country Link
US (1) US20110164634A1 (cg-RX-API-DMAC7.html)
JP (1) JP5388566B2 (cg-RX-API-DMAC7.html)
WO (1) WO2010074044A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6940750B2 (ja) * 2017-04-28 2021-09-29 日亜化学工業株式会社 レーザ装置
JP7590889B2 (ja) * 2021-02-24 2024-11-27 浜松ホトニクス株式会社 外部共振型レーザモジュール、及び外部共振型レーザモジュールの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223741A (en) * 1989-09-01 1993-06-29 Tactical Fabs, Inc. Package for an integrated circuit structure
JP2002094168A (ja) * 2000-09-19 2002-03-29 Toshiba Corp 半導体レーザ装置及びその製造方法
US6760352B2 (en) * 2001-09-19 2004-07-06 The Furukawa Electric Co., Ltd. Semiconductor laser device with a diffraction grating and semiconductor laser module
JP2004327608A (ja) * 2003-04-23 2004-11-18 Sharp Corp サブマウント、レーザモジュール、光学装置、半導体レーザ装置およびその製造方法
JP2006269846A (ja) * 2005-03-25 2006-10-05 Anritsu Corp サブマウント及びそれを用いた光半導体装置
JP4772560B2 (ja) * 2006-03-31 2011-09-14 住友電工デバイス・イノベーション株式会社 光半導体装置、およびその制御方法

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