JP2010141196A - Temperature control unit, temperature control method, stage device, and exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature control unit, a temperature control method, a stage device, and an exposure device that save spaces and reduce costs. <P>SOLUTION: The temperature control unit which controls the temperature of a body includes a first space brought into thermal contact with the body, a second space connected to the first space through a constriction portion, and a pressure control unit which controls pressure in at least one of the first space and second space so that gas flows from the second space to the first space through the constriction portion. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a temperature control apparatus, a temperature control method, a stage apparatus, and an exposure apparatus.

  When an electronic device such as a semiconductor element or a liquid crystal display element is manufactured by a photolithography process, a pattern image of a mask or reticle (hereinafter referred to as a reticle) on which a pattern is formed is exposed to a photosensitive material (resist) via a projection optical system. An exposure apparatus that projects onto each projection (shot) region on a substrate coated with is used.

  An exposure apparatus used in a photolithography process includes a stage apparatus that holds a mask and a stage apparatus that holds a substrate. These stage apparatuses move by the operation of a motor apparatus having a coil or the like. When the motor device is operated, the coil generates heat, and the performance of the motor device itself may deteriorate, or the periphery of the motor device may be affected (for example, peripheral members may be thermally deformed). In addition, when the number of times the substrate is irradiated with exposure light increases, the temperature of the substrate rises, causing deformation such as expansion and warping, and the pattern image may be distorted. As a result, an exposure failure occurs, which may cause a defective device.

On the other hand, the structure by which the temperature control apparatus was provided in the stage apparatus is proposed. As a temperature control device, for example, a configuration in which a flow path is arranged in a stage device and a liquid heat medium such as water is circulated in the flow path is known. In the configuration in which the liquid medium is circulated, even if the temperature is controlled with respect to a large amount of heat such as heat generated by the coil, excellent temperature control capability is exhibited.
US Patent Application Publication No. 2005/0057102

  However, the temperature control device as described above becomes large in terms of space and cost when temperature is controlled with respect to a small amount of heat compared to the heat generated by the coil such as heat generated by exposure light exposure. There is a case.

  In view of the circumstances as described above, an object of the present invention is to provide a temperature control device, a temperature control method, a stage device, and an exposure device that can achieve space saving and cost reduction.

In order to achieve the above object, a temperature control device (60) according to the present invention is a temperature control device that controls the temperature of an object (40), and is a first space (K1) that is in thermal contact with the object. The second space (K2) connected to the first space via the restricting portion (43) and the second space (K2) so that gas flows from the second space to the first space via the restricting portion. A pressure adjusting device (50) for adjusting the pressure of at least one of the first space and the second space.
According to the present invention, since the gas is circulated from the second space to the first space via the throttle portion, the temperature of the gas supplied from the second space to the first space is changed by the Joule-Thomson effect. The object that is in thermal contact with the first space is temperature-controlled according to the temperature of the gas supplied to the first space.

The temperature adjustment method according to the present invention is a temperature adjustment method for adjusting the temperature of the object (40), and the first pressure in the first space (K1) in thermal contact with the object is reduced by the throttle (43 ) To lower the second pressure of the second space (K2) connected to the first space, and gas is circulated from the second space to the first space through the throttle portion.
According to the present invention, since the gas is circulated from the second space to the first space via the throttle portion, the temperature of the gas supplied from the second space to the first space is changed by the Joule-Thomson effect. The object that is in thermal contact with the first space is temperature-controlled according to the temperature of the gas supplied to the first space.

A stage apparatus (2) according to the present invention has a substrate holding part (40) for holding a substrate, a stage body (2a) provided to be movable within a predetermined plane, and the substrate holding part as the object. The temperature control device (60) that performs temperature control is provided.
According to the present invention, since the temperature of the substrate holding unit is adjusted by the temperature adjustment device, the temperature of the substrate is adjusted via the substrate holding unit.

An exposure apparatus (EX) according to the present invention is an exposure apparatus that performs exposure using a substrate, and includes the above-described stage apparatus (2).
According to the present invention, in the stage apparatus, since the temperature of the substrate holding unit and the substrate held by the substrate holding unit is controlled, exposure is performed while maintaining the temperature of the substrate at a desired temperature.

  ADVANTAGE OF THE INVENTION According to this invention, the temperature control apparatus and temperature control method which can achieve space saving and cost reduction can be obtained. According to the present invention, it is possible to hold the substrate while appropriately adjusting the temperature of the substrate while reducing the influence of vibration or the like during movement. According to the present invention, the occurrence of exposure failure can be suppressed.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. In each of the following drawings, the predetermined direction in the horizontal plane is the X-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, the direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, the vertical direction). Is the Z-axis direction. The rotation (inclination) directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively.

FIG. 1 is a schematic block diagram that shows the exposure apparatus EX.
In the present embodiment, a case where the exposure apparatus EX is an EUV exposure apparatus that exposes the substrate P with extreme ultra-violet (EUV) light will be described as an example. Extreme ultraviolet light is an electromagnetic wave in a soft X-ray region having a wavelength of about 5 to 50 nm, for example. In the following description, extreme ultraviolet light is appropriately expressed as EUV light. As an example, in the present embodiment, EUV light having a wavelength of 13.5 nm is used as the exposure light EL.

  As shown in FIG. 1, the exposure apparatus EX includes a stage apparatus ST including a mask stage apparatus 1 that can move while holding a mask M on which a pattern is formed, and a substrate stage apparatus 2 that can move while holding a substrate P. A light source device 3 that generates the exposure light EL, an illumination optical system IL that illuminates the mask M with the exposure light EL from the light source device 3, and an image of the pattern of the mask M illuminated with the exposure light EL on the substrate P. A projection optical system PL for projecting and a control device 4 for controlling the operation of the entire exposure apparatus EX are provided. The substrate P includes a substrate in which a film such as a photosensitive material (resist) is formed on the surface of a base material such as a semiconductor wafer. The mask M includes a reticle on which a device pattern projected onto the substrate P is formed.

  In the present embodiment, the mask M is a reflective mask having a multilayer film capable of reflecting EUV light. The exposure apparatus EX illuminates the surface (reflection surface) of the mask M, on which the pattern is formed of the multilayer film, with the illumination light EL (EUV light), and the substrate P having photosensitivity with the exposure light EL reflected by the mask M. Exposure.

  The exposure apparatus EX of the present embodiment has a chamber apparatus 6. The chamber device 6 covers the third space 5 in which the exposure light EL travels, and can set the third space 5 in a predetermined state environment. The chamber device 6 includes a third space forming member 7 that forms the third space 5 and a first adjusting device 8 that adjusts the environment of the third space 5.

The first adjustment device 8 includes a vacuum system and adjusts the third space 5 to a vacuum state. The control device 4 uses the first adjustment device 8 to adjust the third space 5 in which the exposure light EL travels to a substantially vacuum state. As an example, in the present embodiment, the pressure in the third space 5 is adjusted to a reduced pressure atmosphere of about 1 × 10 ⁻⁷ [Pa].

The illumination light emitted from the light source device 3 travels through the third space 5. In the third space 5, at least a part of the illumination optical system IL and the projection optical system PL are arranged. The illumination light emitted from the light source device 3 illuminates the mask M through the illumination optical system IL disposed in the third space 5.
The illumination light illuminated on the mask M becomes exposure light EL including information on the pattern image of the mask M and passes through the projection optical system PL. In the present embodiment, the substrate stage apparatus 2 is disposed in the third space 5.

  In the description of the present embodiment, the EUV light from the light source device 3 until it illuminates the mask M is described as illumination light, and the EUV light that is reflected by the mask M and projected onto the substrate P is described as exposure light EL. However, for convenience of explanation, the names are properly used, and both may be handled as the exposure light EL.

  The third space forming member 7 has a first opening 9 and a first surface 11 provided around the first opening 9. The first opening 9 is formed at a position where illumination light that has traveled through the third space 5 can enter. In the present embodiment, the first opening 9 is formed at a position where illumination light emitted from the illumination optical system IL can enter.

  The mask stage apparatus 1 is configured to move the mask M while holding the mask M, and is arranged to cover the first opening 9. The mask stage apparatus 1 has a second surface 12 facing the first surface 11 provided on the third space forming member 7 (guide member 18), and the second surface 12 is being guided by the first surface 11. Relative movement with the first opening 9 is possible. In the present embodiment, the gas seal mechanism 10 is formed between the first surface 11 of the third space forming member 7 and the second surface 12 of the mask stage apparatus 1. At this time, a predetermined gap G <b> 1 is formed between the first surface 11 and the second surface 12. The gap G1 is adjusted to a predetermined amount (for example, about 0.1 to 1 μm), and the gas is prevented from flowing into the third space 5 through the gap G1. In the present embodiment, the first opening 9 is covered with the mask stage device 1, and as described above, the gas seal mechanism 10 is formed between the first surface 11 and the second surface 12, so that the third The space 5 is almost sealed. Thereby, the chamber apparatus 6 can control the 3rd space 5 to a predetermined state (vacuum state).

  The mask stage apparatus 1 holds the mask M so that the mask M is arranged in the third space 5 through the first opening 9. In the present embodiment, the mask stage apparatus 1 is disposed on the + Z side of the third space 5 and holds the mask M so that the reflective surface of the mask M faces the −Z side (the third space 5 side). In the present embodiment, the mask stage apparatus 1 holds the mask M so that the reflective surface of the mask M and the XY plane are substantially parallel. The illumination light emitted from the illumination optical system IL is applied to the reflection surface of the mask M held by the mask stage apparatus 1.

  The mask stage apparatus 1 will be described in more detail. The mask stage apparatus 1 is configured to be larger than the first opening 9, have a second surface 12, and is configured to be movable with respect to the first surface 11 and the first opening. The first stage 13 includes a second stage 14 that is smaller than the first opening 9 and configured to be movable with respect to the first stage 13 while holding the mask M. The first stage 13 is disposed so as to cover the first opening 9, and the gas seal mechanism 10 is formed between the second surface 12 of the first stage 13 and the first surface 11 of the third space forming member 7. The The first stage 13 is movable with respect to the first surface 11 and the first opening 9 while being guided by the first surface 11. The second stage 14 is disposed on the −Z side (third space 5 side) of the first stage 13. The mask M held on the second stage 14 is disposed in the third space 5 through the first opening 9. The second stage 14 is movable with respect to the first stage 13 while holding the mask M. With such a configuration, the first stage 13 can function as a coarse movement stage for moving the mask M, and the second stage can function as a fine movement stage for moving the mask M. Note that the first stage 13 and the second stage 14 have drive devices that move each stage, although not shown.

The chamber device 6 includes a second member 16 that forms the fourth space 15 between the outer surface of the third space forming member 7 and a second adjustment device 17 that adjusts the environment of the fourth space 15. ing. The fourth space 15 accommodates at least a part of the mask stage apparatus 1 (for example, the first stage 13 or the like). In the present embodiment, the outside of the third space 5 and the fourth space 15 is an atmospheric space, and the pressure is atmospheric pressure. The second adjustment device 17 adjusts the fourth space 15 to a pressure higher than the pressure of the third space 5 and lower than the atmospheric pressure. As an example, in the present embodiment, the pressure in the fourth space 15 is adjusted to a reduced pressure atmosphere of about 1 × 10 ⁻¹ [Pa].

  With the configuration described above, at least a part of the mask stage apparatus 1 is disposed in the fourth space 15, and the mask M held by the mask stage apparatus 1 is disposed in the third space 5.

The exposure apparatus EX is a scanning exposure apparatus (so-called scanning stepper) that projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P in a predetermined scanning direction in synchronization.
In the present embodiment, the scanning direction (synchronous movement direction) of the mask M is the Y-axis direction, and the scanning direction (synchronous movement direction) of the substrate P is also the Y-axis direction. The exposure apparatus EX moves the shot area of the substrate P in the Y-axis direction with respect to the projection area of the projection optical system PL, and synchronizes with the movement of the shot area of the substrate P in the Y-axis direction. While moving the pattern formation region of the mask M with respect to the illumination region of the IL in the Y-axis direction, the mask M is illuminated with the exposure light EL, and the substrate P is irradiated with the exposure light EL from the mask M. Expose P.

  The first stage 13 of the mask stage apparatus 1 is arranged in the Y-axis direction so that the entire pattern formation region of the mask M passes through the illumination region of the illumination optical system IL during scanning exposure of one shot region on the substrate P. It has a relatively large stroke in the scanning direction). As the first stage 13 moves in the Y-axis direction, the second stage 14 supported by the first stage 13 also moves in the Y-axis direction together with the first stage 13. Accordingly, when the first stage 13 moves in the Y-axis direction, the mask M held by the second stage 14 also moves in the Y-axis direction together with the first stage 13. The second stage 14 is slightly movable with respect to the first stage 13, and moves with a stroke smaller than the stroke of the first stage 13. Further, the second stage 14 may be movable with respect to the first stage 13 in the X direction with a small stroke.

  Further, the gas seal mechanism 10 is formed between the first surface 11 of the third space forming member 7 and the second surface 12 of the first stage 13, and the first stage 13 with respect to the third space forming member 7. Even when the gas is moved, the inflow of gas into the third space 5 is suppressed. In the present embodiment, a gap adjusting mechanism for adjusting the gap G 1 between the first surface 11 and the second surface 12 is provided, and the first stage 13 is moved relative to the third space forming member 7. Even in this state, the gap G1 between the first surface 11 and the second surface 12 is maintained at a predetermined amount. Thereby, even when the 1st stage 13 is moved with respect to the 3rd space formation member 7, it is suppressed that gas flows into the 3rd space 5 inside.

  The third space forming member 7 includes a guide member 18 on which the first surface 11 is formed, and a chamber member 19 facing at least a part of the guide member 18. The guide member 18 guides the movement of the mask stage apparatus 1. The mask stage apparatus 1 (first stage 13) moves relative to the first opening 9 while being guided by the first surface 11 of the guide member 18 as described above.

  The chamber device 6 includes a bellows member 20 that connects the guide member 18 and the chamber member 19 in addition to the third space forming member 7 and the first adjusting device 8. The bellows member 20 has flexibility and is elastically deformable. In the present embodiment, the bellows member 20 is made of stainless steel. Stainless steel has less outgassing. Therefore, the influence which the bellows member 20 has on the third space 5 can be suppressed. Note that the bellows member 20 is used as an example, and a material other than stainless steel can be used as long as the influence of degassing is small.

  The third space forming member 7 has a first opening 9 and a first surface 11, and is configured to include a guide member 18 and a chamber member 19. The guide member 18, the chamber member 19, the bellows member 20, the mask stage device 1 (mainly the first stage 13), and the chamber member SC provided in the stage device ST (part of the container, details will be described later). A substantially sealed third space 5 is formed. The chamber member 19 has an upper surface 19A facing the lower surface 18B of the guide member 18, and the bellows member 20 is disposed so as to connect the lower surface 18B of the guide member 18 and the upper surface 19A of the chamber member 19.

  In the present embodiment, the exposure apparatus EX includes a base member 21 and a first support member 23 supported on the base member 21 via a first vibration isolation system 22. The chamber member 19 is supported by the first support member 23. A first frame member 24 is disposed on the base member 21. The first frame member 24 includes a support portion 25 and a support portion 26 connected to the upper end of the support portion 25. A second support member 27 that supports the lower surface of the guide member 18 is connected to the support portion 26. The chamber member 19 and the second support member 27 are separated from each other. The chamber member 19 and the first frame member 24 are separated from each other, and a flexible (elastic) sealing mechanism such as a bellows member is disposed between the chamber member 19 and the first frame member 24. The chamber member 19 has an upper surface 19A facing the lower surface 18B of the guide member 18 supported by the second support member 27. The bellows member 20 is disposed so as to connect the lower surface 18B of the guide member 18 and the upper surface 19A of the chamber member 19.

  The light source device 3 is a so-called LPP (Laser Produced Plasma) light source that irradiates a target material such as xenon (Xe) with laser light, converts the target material into plasma, and generates EUV light. Device. The light source device 3 is a so-called DPP (Discharge Produced Plasma) type light source device that generates discharge in a predetermined gas, plasmifies the predetermined gas, and generates EUV light. Also good. EUV light (illumination light) generated by the light source device 3 enters the illumination optical system IL through a wavelength selection filter (not shown). Here, the wavelength selection filter has a characteristic of selectively transmitting only EUV light having a predetermined wavelength (for example, 13.4 nm) from light supplied from the light source device 3 and blocking transmission of light of other wavelengths. The EUV light that has passed through the wavelength selection filter illuminates a reflective mask (reticle) M on which a pattern to be transferred is formed via the illumination optical system IL.

  The illumination optical system IL illuminates the mask M with the exposure light EL from the light source device 3. The illumination optical system IL includes a plurality of optical elements, and illuminates a predetermined illumination area on the mask M with the exposure light EL having a uniform illuminance distribution. The optical element of the illumination optical system IL includes a multilayer film reflecting mirror including a multilayer film capable of reflecting EUV light. The multilayer film of the optical element includes, for example, a Mo / Si multilayer film.

  The first stage 13 of the mask stage apparatus 1 is movable in three directions, ie, the X axis, the Y axis, and the θZ direction while holding the mask M. The second stage 14 of the mask stage apparatus 1 is movable in six directions including the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions while the mask M is held. In the present embodiment, a laser interferometer (not shown) that can measure the position information of the mask stage apparatus 1 (mask M) and a focus / leveling detection system (not shown) that can detect the surface position information of the reflecting surface of the mask M. The control device 4 controls the position of the mask M held by the mask stage device 1 based on the measurement result of the laser interferometer and the detection result of the focus / leveling detection system.

  The first stage 13 and the second stage 14 of the mask stage apparatus 1 are made of metal. As an example, the first stage 13 and the second stage 14 of the present embodiment are made of stainless steel with less outgassing (outgassing).

  Projection optical system PL includes a plurality of optical elements, and projects an image of the pattern of mask M onto substrate P at a predetermined projection magnification. The optical element of the projection optical system PL includes a multilayer reflector having a multilayer film capable of reflecting EUV light. The multilayer film of the optical element includes, for example, a Mo / Si multilayer film.

  A plurality of optical elements of the projection optical system PL are held by the lens barrel 28. The lens barrel 28 has a flange 29. The lower end of the second frame member 30 is connected to the flange 29. The upper end of the second frame member 30 is connected to the support portion 26 of the first frame member 24 via a vibration isolation system 31. The lens barrel 28 (flange 29) is suspended from the second frame member 30.

FIG. 2 is an external perspective view of the substrate stage apparatus 2.
A substrate stage apparatus 2 shown in FIG. 2 includes a surface plate JB and a main body stage (moving member) 2a that holds a substrate P such as a wafer and is movable in directions of six degrees of freedom. The main body stage 2a can move in the X and Y directions with a relatively large stroke, and can move in the Z, θx, θy, and θz directions with a relatively small stroke. The main body stage 2 a has a substrate holder 40 that holds the substrate P. The substrate holder 40 is disposed on the main body stage 2 a and has a chuck mechanism (not shown) that holds the substrate P.

  The driving device for driving the main body stage 2a drives the main body stage 2a with a long stroke in the X direction, and finely drives in the Y direction, Z direction, θx, θy, θz, the main body stage 2a, Second drive systems 73A and 73B for driving the first drive system 90 with a long stroke in the Y direction are provided. The driving of the first drive system 90 and the second drive systems 73A and 73B is controlled by the control device 4.

  The second drive system 73A has a linear motor, and this linear motor is composed of a stator 74A extending in the Y direction and a mover 75A driven with respect to the stator 74A. The mover 75A can also be called a Y coarse movement stage in the configuration of the present embodiment. The mover 75A has a magnet inside. A plurality of magnets are mounted side by side in the Y-axis direction, and magnets having different magnetic poles are alternately arranged. The stator 90A of the first drive system 90 and the movers 75A and 75B of the second drive systems 73A and 73B are integrally formed via connection members 70 and 71, respectively. The first drive system 90 and the second drive systems 73A and 73B are provided with a cooling device (not shown). The cooling device has a refrigerant flow passage for flowing a refrigerant such as a liquid.

FIG. 3 is a plan view showing the configuration of the substrate stage apparatus 2. FIG. 4 is a diagram showing a configuration along the section AA in FIG.
As shown in FIGS. 3 and 4, the substrate stage device 2 is provided with a temperature adjustment device 60. The temperature adjustment device 60 includes a pressure adjustment device 50, a tube 42, a throttle portion 43, and a groove portion 41. The temperature adjustment device 60 is configured to circulate gas from the pressure adjustment device 50 into the groove portion 41 through the tube 42 and the throttle portion 43.

  The pressure adjusting device 50 includes an electropneumatic regulator 51, a pressure gauge 52, and a flow meter 53, and each is connected by a pipe part 54. In FIG. 3, the detailed configuration of the pressure adjusting device 50 is omitted. The electropneumatic regulator 51 is connected to the pipe 54a and the pipe 54b. The pipe 54a is connected to a gas supply source (not shown) provided in a factory, for example.

  The electropneumatic regulator 51 adjusts the pressure and flow rate of the gas supplied through the pipe 54a and supplies the gas to the pipe 54b. The adjustment of the pressure and the flow rate is performed based on the control of the control device 4, for example. The pressure gauge 52 can detect the pressure in the pipe 54b. The flow meter 53 is connected to the pipe 54b and the pipe 54c, and can detect the flow rate of the gas flowing from the pipe 54b to the pipe 54c. The detection results detected by the pressure gauge 52 and the flow meter 53 are transmitted to the control device 4, for example. The control device 4 controls the electropneumatic regulator 51 based on the detection results of the pressure gauge 52 and the flow meter 53.

  The tube 42 is, for example, a tubular member having a uniform inner diameter, and connects the pressure adjusting device 50 and the groove portion 41. The first end portion 42a side of the tube 42 connected to the pressure adjusting device 50 is provided so as to penetrate the connection member 70 from the lower surface 70a of the connection member 70 to the upper surface 70b, for example. The first end 42 a is connected to the pipe 54 c of the pressure adjusting device 50 on the upper surface 70 b of the connection member 70. The second end portion 42b side of the tube 42 connected to the groove portion 41 is provided so as to penetrate the main body stage 2a, and is exposed to the outside of the main body stage 2a from the lower surface 2c. The space K2 formed in the tube 42 is the second space in the present invention. A part of the tube 42 is exposed in the third space 5. The exposed portion of the tube 42 is covered with, for example, a heat insulating member 46.

  The groove portion 41 is a groove formed, for example, in an annular shape on the upper surface 2b of the main body stage 2a in plan view. The groove portion 41 is a space surrounded by the main body stage 2a and the substrate holder 40 by arranging the substrate holder 40 on the main body stage 2a. This space K1 is the first space in the present invention.

  Since the first space K <b> 1 is formed so as to contact the substrate holder 40, heat is transferred between the first space K <b> 1 and the substrate holder 40. Thus, the first space K1 is in a state of being in thermal contact between the substrate holder 40 and the substrate P. In the present embodiment, the state of being in thermal contact refers to a state of contact so that heat transfer is performed to such an extent that the temperature can be controlled, including, for example, a state of direct contact, If the heat transfer is performed to such an extent that the temperature can be controlled, the state of contact through another solid, liquid, gas, or the like is included.

  The throttle portion 43 is provided at the second end portion 42 b of the tube 42. The throttle portion 43 has an inner diameter that is smaller than the inner diameter of the tube 42. The inside of the tube 42 is connected to the inside of the groove portion 41 via the throttle portion 43. For this reason, the second space K2 is connected to the first space K1 via the aperture 43. A porous body can be used as the diaphragm 43. The material is not particularly limited, but may be formed of, for example, ceramic.

  The main body stage 2 a has an air opening 44. The air opening 44 is an opening provided so as to penetrate the groove 41 and the outer surface of the main body stage 2a. In the present embodiment, the air opening 44 is provided so as to penetrate the main body stage 2a in the Z direction, for example. The atmosphere opening port 44 is connected to the outside of the chamber device 6 via, for example, an atmosphere opening pipe 44a. As described above, the first space K1 and the outside (atmosphere) of the chamber device 6 are connected via the atmosphere opening 44, and the pressure of the first space K1 is maintained at atmospheric pressure. Yes. In the first space K1, the air opening 44 is provided at any position in the first space K1 as long as it is located downstream of the throttle 43 (not provided between the throttle 43 and the groove 41). It doesn't matter.

  A heat exchanger 45 is provided in the connection member 70. The heat exchanger 45 has a temperature control medium (for example, refrigerant) circulation part 45a. For example, a part of the refrigerant flow path constituting the cooling device of the second drive system 73A can be used for the temperature control medium circulation part 45a. The tube 42 is disposed so as to pass through the heat exchanger 45. The inside of the tube 42 is temperature-controlled (for example, cooled) in the heat exchanger 45 by the temperature-control medium circulation part 45a. The temperature control by the heat exchanger 45 is controlled by the control device 4, for example. For example, the temperature adjustment operation can be controlled by adjusting the flow rate of the medium to be circulated through the temperature adjustment medium distribution unit 45a in the heat exchanger 45.

  A temperature sensor 47 is provided in the main body stage 2a. The temperature sensor 47 detects the temperature inside the main body stage 2 a and the temperature of the substrate holder 40, and transmits the detection result to the control device 4. The temperature sensor 47 may be configured to detect the temperature of the substrate P.

Next, an example of the operation of the exposure apparatus EX having the above-described configuration will be described.
The third space 5 is adjusted to a vacuum state (first pressure value) by the first adjusting device 8.
Further, the pressure in the fourth space 15 is approximately the same as the pressure in the third space 5 by the second adjustment device 17 or higher than the pressure in the third space 5 and lower than the atmospheric pressure (second pressure value). Adjusted to Alternatively, the fourth space 15 may be set to a pressure lower than that of the third space 5. The gap G1 between the first surface 11 and the second surface 12 is adjusted to a predetermined amount by the gap adjusting mechanism 35, and by the gas seal mechanism 10 formed between the first surface 11 and the second surface 12, Inflow of gas into the third space 5 is suppressed. Thereby, the vacuum state and environment of the third space 5 are maintained.

  After the mask M is held by the mask stage apparatus 1 and the substrate P is held by the substrate stage apparatus 2, the control device 4 starts an exposure process for the substrate P. In order to illuminate the mask M with illumination light, the control device 4 starts the light emission operation of the light source device 3.

  The EUV light emitted from the light source device 3 by the light emission operation of the light source device 3 enters the illumination optical system IL. The EUV light incident on the illumination optical system IL travels through the illumination optical system IL and is then supplied to the first opening 9. The EUV light supplied to the first opening 9 enters the mask M held by the mask stage apparatus 1 through the first opening 9 as illumination light. That is, the mask M held by the mask stage apparatus 1 is emitted from the light source device 3 and illuminated with illumination light (EUV light) via the illumination optical system IL. Illumination light that is irradiated onto the reflective surface of the mask M and reflected by the reflective surface enters the projection optical system PL that is disposed in the third space 5 as exposure light EL that includes information on the pattern image of the mask M. The exposure light EL that has entered the projection optical system PL travels through the projection optical system PL, and is then irradiated onto the substrate P held by the substrate stage apparatus 2.

  In synchronization with the movement of the mask M in the Y-axis direction, the control device 4 illuminates the mask M with the exposure light EL while scanning and moving the substrate P in the Y-axis direction by driving the second drive systems 73A and 73B. . Thereby, the substrate P is exposed with the exposure light EL, and an image of the pattern of the mask M is projected onto the substrate P. Then, the control device 4 performs step movement of the substrate P in the X-axis direction by driving the first drive system 90 and scanning movement of the substrate P in the Y-axis direction by driving the second drive systems 73A and 73B. By repeating, the pattern of the mask M is exposed to the substrate P.

  When the substrate stage device 2 is moved, the coil device generates heat by the operation of the coil devices of the second drive systems 73A and 73B. Due to this heat generation, for example, the performance of the drive system such as the second drive systems 73A and 73B is deteriorated, members around the drive system are thermally deformed, and the movement of the substrate stage apparatus 2 becomes unstable. There is a case. On the other hand, in this embodiment, the coil jacket in which the coil device is stored is cooled by a cooling device (not shown) to prevent the heat generated by the coil device from being transmitted to the surroundings.

  Further, when the number of exposure light irradiations applied to the substrate P increases, the temperature of the substrate P held by the substrate stage device 2 rises, causing deformation such as expansion and warping, and the pattern image is distorted. There is also. As a result, an exposure failure occurs, which may cause a defective device. In contrast, in the present embodiment, the temperature of the substrate holder 40 is controlled by the temperature control device 60.

  The gas supplied from the utility power supply source to the pressure adjusting device 50 is supplied to the pipe 54 c with the pressure and flow rate adjusted by the electropneumatic regulator 51. The control device 4 adjusts the pressure of the gas supplied to the pipe 54c by the electropneumatic regulator 51 so as to be higher than the atmospheric pressure.

  This gas is supplied from the pipe 54c to the second space K2 while maintaining a pressure higher than the atmospheric pressure. The gas supplied to the second space K2 is temperature-controlled (for example, cooled) to a predetermined temperature by the heat exchanger 45. The gas supplied from the utility supply source to the electropneumatic regulator 51 may not have a constant temperature. By passing the heat exchanger 45, the temperature of the gas flowing through the second space K2 is stabilized. The predetermined temperature at this time is preferably substantially the same as the temperature in the third space 5, for example.

  The gas that has passed through the heat exchanger 45 is supplied to the first space K <b> 1 through the throttle unit 43. The first space K1 is maintained at atmospheric pressure, and the gas flowing through the second space K2 is at a higher pressure than atmospheric pressure. Therefore, the temperature of the gas supplied from the second space K2 to the first space K1 via the throttle portion 43 becomes a state where the temperature has changed due to the Joule-Thompson effect compared to when the gas is circulating in the second space K2.

  The Joule-Thomson effect is a phenomenon in which the temperature changes when a real gas flows from a high pressure side to a low pressure side through a throttle or a porous body. Regarding the temperature change, there are cases where it rises and falls depending on the type of gas. In general, it is known that the temperature decreases when air near normal temperature and normal pressure is used. In the present embodiment, since the power (air) is used as the gas supplied from the second space K2 to the first space K1, the temperature of the gas decreases when supplied to the first space K1.

  The gas flowing through the second space K <b> 2 in the tube 42 is maintained at a temperature substantially the same as the temperature in the third space 5 by the heat exchanger 45. For this reason, the temperature of the gas in the first space K <b> 1 is lower than the temperature in the third space 5. Since the first space K1 is in thermal contact with the substrate holder 40, heat is transferred from the substrate holder 40 to the gas in the first space K1, and the substrate holder 40 is cooled. The gas in the first space K <b> 1 that has received heat from the substrate holder 40 is discharged to the atmosphere via the atmosphere opening port 44.

  Thus, the substrate holder 40 is cooled by the operation of the temperature control device 60. When causing the exposure apparatus EX to perform the exposure operation, the control device 4 keeps cooling the substrate holder 40 over both the period during which the substrate P is irradiated with the exposure light and the period during which the substrate P is replaced. Is preferred. It is preferable that the control device 4 keeps cooling the substrate holder 40 even when lots are switched in the exposure operation, that is, during a period in which the mask M is replaced. When the mask M is replaced, the control device 4 controls the temperature of the gas in the second space K2 by the heat exchanger 45 so that the temperature of the gas in the second space K2 is lower than the temperature in the third space 5. You may adjust it.

  In the Joule-Thompson effect, the temperature of the gas supplied to the downstream side of the throttle unit changes according to the pressure difference between the space connected to the upstream side and the downstream side of the throttle unit. Since the first space K1 is maintained at atmospheric pressure, for example, the control device 4 can adjust the temperature of the gas by adjusting the pressure of the gas supplied to the second space K2. Specifically, the temperature drops by about 0.2 K per 100 kPa pressure difference in air at normal temperature and normal pressure. The control apparatus 4 can also adjust the temperature of the gas supplied to the 1st space K1 using this. In addition, the temperature adjustment can be performed by adjusting the temperature of the gas in the second space K2 by the heat exchanger 45. When adjusting the inside of the first space K1 to a desired temperature, for example, the detection result of the temperature sensor 47 can be used as appropriate.

  As described above, according to this embodiment, since the gas is circulated from the second space K2 to the first space K1 via the throttle portion 43, the temperature of the gas in the second space K2 changes due to the Joule-Thompson effect. (Cooled in this embodiment) and supplied to the first space K1. The substrate holder 40 in thermal contact with the first space K1 is temperature-controlled (cooled in this embodiment) according to the temperature of the gas supplied to the first space K1. As described above, since the temperature control device 60 having a simple configuration is used as compared with the temperature control device that performs temperature control using a liquid heat medium, space saving and cost reduction can be achieved.

  In addition, according to the present embodiment, since the space can be saved by the temperature control device 60 having a simple configuration, the temperature of the substrate P is appropriately adjusted while reducing the influence of vibration and the like during movement. Can be obtained, and an exposure apparatus EX that can suppress the occurrence of exposure failure can be obtained.

  Moreover, in this embodiment, since only gas is distribute | circulated to the tube 42, the internal diameter of the tube 42 can be made small compared with the case where refrigerant | coolants, such as water, are distribute | circulated, for example. Since a thin tube can be used as the tube 42 compared with the refrigerant circulation tube, even if the tube 42 protrudes from the main body stage 2a as in the present embodiment, vibrations applied to the substrate stage device 2 and the like. Is less affected.

  Further, when the exposure apparatus EX is an EUV exposure apparatus that exposes the substrate P using EUV light as in the present embodiment, when a liquid refrigerant is used for cooling the substrate holder 40, the liquid constituting the refrigerant May leak into the third space 5. On the other hand, in this embodiment, since temperature control without using a liquid using the Joule-Thompson effect is performed, the possibility of molecules leaking into the third space 5 can be reduced. Moreover, since the inside of the 3rd space 5 is a pressure reduction atmosphere, it is thought that the influence at the time of the liquid leaking becomes easy to become larger than under normal pressure. Therefore, there is an advantage that the environment in the third space 5 can be easily maintained.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, as the configuration of the main body stage 2a of the substrate stage apparatus 2, as shown in FIG. 5, the rib members 102 are arranged in a lattice shape in the X and Y directions, and the portion 103 surrounded by the rib members 102 is hollow. It does not matter as a configuration. In FIG. 5, two rib members 102 are provided in the X direction and the Y direction in the frame member 101, and the hollow portions 103 are formed in nine places by the frame member 101 and the rib member 102. Of course, the number of rib members 102 and the number of hollow portions 103 formed by the rib members 102 may be other than this.

  When the main body stage 2a shown in FIG. 5 is applied to the substrate stage apparatus 2 of the above-described embodiment, for example, the configuration shown in FIG. 6 is obtained. As shown in FIG. 6, a substrate holder 40 is disposed on the upper surface 2b of the main body stage 2a, for example, at a position closing the hollow portion 103. On the lower surface 2c of the main body stage 2a, for example, a plate member 104 is disposed at a position where the hollow portion 103 is closed. The plate-like member 104 is formed to have a size that substantially matches the main body stage 2a in a plan view, for example. The hollow portion 103 surrounded by the rib member 102, the substrate holder 40, and the plate-like member 104 constitutes the first space K1 in the above embodiment. In the case of the configuration shown in FIG. 6, the first space K1 is provided at nine locations. The plate-like member 104 is formed with the throttle portion 43 and the air opening 44 of the above embodiment for each hollow portion 103. For example, among the three hollow portions 103 shown in FIG. 6, one throttle portion 43 is provided on the left side, two on the center, and one on the right side. One air opening 44 is provided for each hollow portion 103. The atmosphere opening port 44 is connected to the atmosphere via, for example, an atmosphere opening pipe 44a. The space in the tube 42 constitutes the second space K2 as in the above embodiment. The second space K2 is connected to a heat exchanger and a pressure adjusting device, for example, as in the above embodiment. Thus, the hollow portion 103 that is structurally formed in the main body stage 2a can be used as the first space K1.

  Moreover, although the temperature control apparatus 60 demonstrated as a structure which temperature-controls the substrate holder 40 in the said embodiment, it is not restricted to this. Since the substrate P is held by the substrate holder 40, heat is also transferred between the first space K1 and the substrate P via the substrate holder 40. Therefore, for example, if the first space K1 is in contact with the substrate P via the substrate holder 40 so that the heat can be moved to such an extent that the temperature can be controlled, the temperature adjustment device 60 is Needless to say, the substrate P can be temperature-controlled.

  Moreover, in the said embodiment, although it was set as the structure which arrange | positions only one aperture | diaphragm | squeeze part 43 which connects one 1st space K1 and one 2nd space K2, it is not restricted to this, For example, one The first space K <b> 1 and one second space K <b> 2 may be connected via a plurality of throttle portions 43.

  In the above-described embodiment, the configuration in which one atmosphere opening 44 is provided in one first space K1 has been described as an example. However, the present invention is not limited to this, and one first space K1 is included in one first space K1. A configuration in which a plurality of atmosphere opening ports 44 are provided may be employed.

  In the above-described embodiment, the configuration in which the temperature adjustment device 60 is applied to the substrate stage device 2 of the exposure apparatus EX has been described as an example. However, the present invention is not limited to this and may be applied to other parts of the exposure apparatus EX. The temperature controller 60 may be applied. Further, the configuration is not limited to the exposure apparatus EX, and the temperature control apparatus 60 may be applied to other equipment. In these cases, the temperature control device 60 may be used for either cooling or heating.

  In the above embodiment, the gas supplied from the second space K2 to the first space K1 via the throttle portion 43 has been described by taking air as an example. However, the present invention is not limited to this, and other gases are used. It does not matter.

  Moreover, in the said embodiment, although it was set as the structure which maintains 1st space K1 at atmospheric pressure, it is not restricted to this, You may maintain at pressure higher than atmospheric pressure, and pressure lower than atmospheric pressure It does not matter if it is maintained.

  In the above-described embodiment, the example in which the pressure of the gas supplied to the second space K2 is mainly adjusted using the pressure adjusting device 50 has been described. However, the present invention is not limited to this example. It is also possible to adjust the gas flow rate mainly. When the flow rate of the gas flowing into the first space is changed, the amount of heat transfer in the first space K1 can be increased or decreased although it does not contribute to the amount of temperature change due to the Joule-Thompson effect. Specifically, since the amount of heat transfer in the first space K1 increases by increasing the flow rate, the cooling of the substrate holder 40 can be promoted. Moreover, since the amount of heat transfer in the first space K1 is reduced by reducing the flow rate, the cooling of the substrate holder 40 can be suppressed.

  The substrate (object) in each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask or reticle used in an exposure apparatus. The original plate (synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the substrate P.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, two mask patterns are synthesized on a substrate through a projection optical system, and one scanning exposure is performed on one substrate. The present invention can also be applied to an exposure apparatus that performs double exposure of shot areas almost simultaneously.

  The type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto a substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). In addition, the present invention can be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask, or the like.

In this embodiment, the case where the exposure light EL is EUV light has been described as an example. However, as the exposure light EL, for example, bright lines (g-line, h-line, i-line) emitted from a mercury lamp and KrF. It is also possible to use far ultraviolet light (DUV light) such as excimer laser light (wavelength 248 nm), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm), or the like. In that case, the third space 5 is not necessarily adjusted to a vacuum state, and for example, the third space 5 can be filled with the first gas. When the third space 5 is filled with the first gas, the gas seal mechanism 10 of this embodiment can be used to maintain the environment of the third space 5 filled with the first gas. Further, the fourth space 15 formed by the second member 16 can be filled with the second gas.

  The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of substrate stages (wafer stages). The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to the wafer stage disclosed in Japanese Patent Application No. 2004-168482 filed earlier by the present applicant.

  An exposure apparatus to which the present invention is applied assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  Next, an embodiment of a manufacturing method of a micro device using the exposure apparatus and the exposure method according to the embodiment of the present invention in the lithography process will be described. FIG. 7 is a flowchart showing a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micro machine, etc.).

  First, in step S10 (design step), function / performance design (for example, circuit design of a semiconductor device) of a micro device is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S13 (wafer processing step), using the mask and wafer prepared in steps S10 to S12, an actual circuit or the like is formed on the wafer by lithography or the like, as will be described later. Next, in step S14 (device assembly step), device assembly is performed using the wafer processed in step S13. This step S14 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S14 are performed. After these steps, the microdevice is completed and shipped.

FIG. 8 is a diagram illustrating an example of a detailed process of step S13 in the case of a semiconductor device.
In step S21 (oxidation step), the surface of the wafer is oxidized. In step S22 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S24 (ion implantation step), ions are implanted into the wafer. Each of the above steps S21 to S24 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  In each stage of the wafer process, when the above-described pretreatment process is completed, the posttreatment process is executed as follows. In this post-processing process, first, in step S25 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in step S27 (development step), the exposed wafer is developed, and in step S28 (etching step), exposed members other than the portion where the resist remains are removed by etching. In step S29 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.

  Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., from mother reticles to glass substrates and The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a silicon wafer or the like. Here, in an exposure apparatus using DUV (deep ultraviolet), VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. In proximity-type X-ray exposure apparatuses, electron beam exposure apparatuses, and the like, a transmissive mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate. Such an exposure apparatus is disclosed in WO99 / 34255, WO99 / 50712, WO99 / 66370, JP-A-11-194479, JP-A2000-12453, JP-A-2000-29202, and the like. .

1 schematically shows a configuration of an exposure apparatus according to an embodiment of the present invention. FIG. The perspective view which shows the structure of the mask stage apparatus which concerns on this embodiment. The top view which shows the structure of the mask stage apparatus which concerns on this embodiment. The figure which shows the structure along the AA cross section in FIG. The perspective view which shows the other structure of the main body stage which concerns on this invention. The perspective view which shows the other structure of the mask stage apparatus based on this invention. The flowchart which shows an example of the manufacturing process of the microdevice of this invention. The figure which shows an example of the detailed process of step S13 in FIG.

Explanation of symbols

EX ... Exposure device P ... Substrate EL ... Exposure light M ... Mask ST ... Stage device 1 ... Mask stage device 2 ... Substrate stage device 2a ... Main body stage 4 ... Control device 40 ... Substrate holder 41 ... Groove portion 42 ... Tube 43 ... Diaphragm portion 44 ... Air opening 45 ... Heat exchanger 50 ... Pressure adjustment device 60 ... Temperature control device 73A, 73B ... Drive system

Claims (24)

A temperature control device for controlling the temperature of an object,
A first space in thermal contact with the object;
A second space connected to the first space via a diaphragm,
A temperature control device comprising: a pressure adjusting device that adjusts pressure of at least one of the first space and the second space so that gas flows from the second space to the first space through the throttle portion.   The temperature adjustment device according to claim 1, wherein the pressure adjustment device makes the second space have a higher pressure than the first space.   The temperature control device according to claim 1 or 2, further comprising a gas temperature adjustment device that adjusts a temperature of the gas before flowing into the first space.   The temperature control apparatus as described in any one of Claims 1-3 further equipped with the gas flow volume adjusting apparatus which adjusts the flow volume of the said gas which distribute | circulates to the said 1st space via the said narrowing part. A temperature detection device for detecting the temperature of the object;
The pressure adjusting device according to any one of claims 1 to 4, wherein the pressure adjusting device adjusts the pressure of at least one of the first space and the second space according to the temperature of the object detected by the temperature detecting device. The temperature control apparatus according to one item.   The temperature control apparatus according to any one of claims 1 to 5, wherein the pressure in the first space is maintained at atmospheric pressure.   The temperature control device according to claim 6, wherein the first space has an air opening on the downstream side of the gas flow with respect to the throttle portion.   The temperature control device according to any one of claims 1 to 7, wherein a plurality of the narrowing portions are provided. A temperature control method for controlling the temperature of an object,
The first pressure in the first space that is in thermal contact with the object is made lower than the second pressure in the second space that is connected to the first space via the restricting portion, and the throttling is performed from the second space. The temperature control method which distribute | circulates gas to the said 1st space through a part.   The temperature control method according to claim 9, wherein the temperature of the gas before flowing into the first space is adjusted.   The temperature control method according to any one of claims 9 to 10, wherein a flow rate of the gas flowing through the first space through the throttle portion is adjusted. Seeking information about the temperature of the object,
The temperature control method according to any one of claims 9 to 11, wherein the pressure of at least one of the first space and the second space is adjusted according to the information.   The temperature control method according to any one of claims 9 to 12, wherein the pressure of the first space is maintained at atmospheric pressure.   The temperature control method according to claim 13, wherein the first space has an air opening on the downstream side of the gas flow with respect to the throttle portion. Obtaining information about the temperature of the object,
The temperature control method according to any one of claims 9 to 11, wherein a flow rate of the gas flowing through the first space is adjusted according to the information.   The temperature control method according to any one of claims 9 to 15, wherein a plurality of the narrowed portions are provided. The object is
A stage main body having a substrate holding part that is provided so as to be movable within a predetermined plane and holds a wafer that performs exposure processing by exposure light that has passed through a mask,
The temperature control method according to any one of claims 9 to 16, wherein the temperature of the stage body is controlled at least during the exposure process. The object is
It is a wafer that performs exposure processing with exposure light that has passed through a mask,
The temperature control method according to any one of claims 9 to 16, wherein the temperature of the wafer is controlled at least during the exposure process.   The temperature control method according to claim 17 or 18, wherein the temperature of the gas flowing through the first space is changed when the mask is replaced.   The temperature adjustment method according to claim 17, wherein the temperature adjustment is performed with respect to heat generated by irradiating the wafer with the exposure light. A stage main body having a substrate holding section for holding the substrate, and provided so as to be movable in a predetermined plane;
A stage apparatus comprising: the temperature control apparatus according to claim 1, wherein the temperature of the substrate holding unit is adjusted as the object. A driving device for driving the stage body;
A drive temperature control device for controlling the temperature of the drive device,
The stage device according to claim 21, wherein the driving temperature control device performs temperature control of the gas before flowing into the first space.   The stage apparatus according to claim 21 or 22, wherein the stage main body is formed to be capable of coarse movement and fine movement by the driving device. An exposure apparatus that performs exposure using a substrate,
An exposure apparatus comprising the stage apparatus according to any one of claims 21 to 23.

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