JP2006287160A - Exposure device and manufacturing method therefor - Google Patents

Exposure device and manufacturing method therefor Download PDF

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Publication number
JP2006287160A
JP2006287160A JP2005108538A JP2005108538A JP2006287160A JP 2006287160 A JP2006287160 A JP 2006287160A JP 2005108538 A JP2005108538 A JP 2005108538A JP 2005108538 A JP2005108538 A JP 2005108538A JP 2006287160 A JP2006287160 A JP 2006287160A
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Prior art keywords
stage
exposure
space
air
wafer
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JP2005108538A
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Japanese (ja)
Inventor
Shigeru Hagiwara
Satonami Hayashiyama
Ryochi Nagahashi
Yosuke Shirata
才斗南 林山
陽介 白田
茂 萩原
良智 長橋
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Nikon Corp
株式会社ニコン
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Priority to JP2005108538A priority Critical patent/JP2006287160A/en
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Abstract

PROBLEM TO BE SOLVED: To provide an exposure apparatus capable of supplying a substantially uniform flow of gas to a space in which a stage apparatus is accommodated and maintaining the same easily.
An exposure apparatus EX includes a stage 22 that can move while holding an object W, a space in which the stage 22 is disposed, a first space 46b in which the stage 22 is accommodated, and a gas A from a gas supply source 70. The sheet member 100 is partitioned into a second space 46a into which the air flows, and the sheet member 100 includes a plurality of air holes communicating the first space 46b and the second space 46a, with respect to the first space 46b. While forming the gas supply surface which supplies the gas A, it forms with a flexible raw material.
[Selection] Figure 1

Description

  The present invention relates to an exposure apparatus and a device manufacturing method.

In lithography processes for manufacturing semiconductor elements, liquid crystal display elements, etc., step-and-repeat reduction projection exposure apparatuses (so-called steppers), step-and-scan scanning projection exposure apparatuses (so-called scanning steppers), etc. The exposure apparatus is used.
In these exposure apparatuses, miniaturization of circuit patterns formed on a photosensitive substrate is demanded as semiconductor elements and the like are highly integrated. In order to realize miniaturization of circuit patterns, it is necessary to control the temperature state of an exposure apparatus, which is a very precise apparatus, to be constant and to exhibit desired performance.
For this reason, for example, as shown in Patent Document 1, in an exposure apparatus, the exposure apparatus main body is accommodated in a chamber, and the space inside the chamber is controlled to have a uniform temperature distribution.
International Publication No. 02/101804 Pamphlet

In the above-described technique, in order to supply the temperature control gas to the space in which the substrate stage on which the photosensitive substrate is placed is accommodated, an aluminum duct into which the temperature control gas flows is disposed in the ceiling portion of the space. . For this reason, at the time of maintenance of the substrate stage or the like, it is necessary to remove the duct in order to secure a work space, and there is a problem that the maintainability is inferior. In particular, when the temperature-controlled gas is supplied to almost the entire space in which the substrate stage is accommodated by downflow, there is a problem that the space occupied by the duct increases and the maintainability deteriorates.
Further, in the above-described technology and the like, it is intended to generate a uniform downflow on substantially the entire surface of the space by providing exhaust portions that exhaust gas at a plurality of locations on the bottom and sides of the space in which the substrate stage is accommodated. However, since the substrate stage or the like becomes an obstacle to the air flow, a uniform downflow is not necessarily realized. Therefore, there is a problem that air fluctuations occur from the optical path space of the laser interferometer that measures the position of the substrate stage, causing measurement errors.

The present invention has been made in view of the above-described circumstances, and an object thereof is to provide an exposure apparatus that can supply a substantially uniform flow of gas to a space in which a stage apparatus is accommodated and that can be easily maintained. And
It is another object of the present invention to provide an exposure apparatus capable of supplying the gas supplied to the space in which the stage apparatus is accommodated in the same direction.

The exposure apparatus and the device manufacturing method according to the present invention employ the following means in order to solve the above-described problems.
According to a first aspect of the present invention, an exposure apparatus (EX) includes a stage (22) capable of holding and moving an object (W), and a space (46) in which the stage is disposed, and a first stage in which the stage is accommodated. A sheet member (100) that partitions into a space (46b) and a second space (46a) into which gas (A) flows from a gas supply source (70), wherein the sheet member includes the first space and the Provided with a plurality of vent holes (102) communicating with the second space, forming a gas supply surface (100a) for supplying gas to the first space, and made of a flexible material did.
According to the present invention, the sheet member is formed with a plurality of vent holes in a flexible material and forms a gas supply surface that allows gas to flow into the first space in which the stage is accommodated. Compared to ducts and the like, it is possible to supply a uniform flow of gas to the first space with a simple structure.

Further, in the case where the sheet member (100) is configured to be detachable, the work space can be simply removed by removing the sheet member made of a flexible material during maintenance of the stage disposed in the first space. Therefore, maintenance can be performed efficiently.
In addition, if at least a part of the vent hole (102) is formed to be inclined with respect to the surface of the sheet member (100), the air supply direction of the gas supplied to the first space is easily adjusted. be able to.
Further, if the vent hole (102) has at least one of an inclination angle, a hole diameter, a number, and a distribution based on the movement locus of the stage (22), the stage can be an obstacle to the flow of gas. By adjusting the gas supply direction and flow rate of the gas supplied to the first space in consideration of the movement trajectory, the stagnation and fluctuation of the gas in the first space can be eliminated.

Moreover, the surface plate (24) which supports a stage (22) so that a movement is possible is provided, the said surface plate is provided facing a sheet | seat member (100), and exhausts the gas (A) of a 1st space (46b). With the exhaust part (110) which performs, it is possible to eliminate gas stagnation on the surface plate and to generate a stable gas flow in the first space.
Further, if the exhaust part (110) can change the exhaust position on the surface plate (24) according to the position of the stage (22), an exhaust port can be secured regardless of the position of the stage. The gas flow in the optical path space of the laser interferometer that measures the position of the stage can be maintained substantially constant regardless of the position of the stage.
In addition, if the exhaust section (110) can be adjusted so that the exhaust area is substantially constant regardless of the change in the exhaust position, the exhaust amount around the stage is maintained substantially constant. The gas flow in the optical path space of the laser interferometer for measuring the position can be stabilized regardless of the position of the stage.

According to a second invention, in the device manufacturing method including the lithography process, the exposure apparatus (EX) of the first invention is used in the lithography process.
According to the present invention, since the gas having a substantially uniform flow is supplied to the first space in which the stage or the like is accommodated, a device having a fine circuit pattern can be manufactured with high accuracy.
In addition, in order to explain each said invention clearly, it demonstrated corresponding to the code | symbol of drawing showing one Example, but it cannot be overemphasized that this invention is not limited to an Example.

According to the present invention, the following effects can be obtained.
A uniform flow of gas is supplied to the first space in which the stage is housed, and furthermore, the gas flow in the optical path space of the laser interferometer that measures the position of the stage can be stabilized. Positioning and the like can be performed, and exposure processing can be performed under a uniform flow of gas. Therefore, a fine circuit pattern or the like can be exposed on the photosensitive substrate with high accuracy.
Thereby, it becomes possible to manufacture a highly accurate device efficiently.

Embodiments of an exposure apparatus and a device manufacturing method according to the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus EX according to the present embodiment.
The exposure apparatus EX transfers the pattern formed on the reticle R to each shot area on the wafer W via the projection optical system 16 while moving the reticle R and the wafer W synchronously in a one-dimensional direction. This is a scanning type exposure apparatus, that is, a so-called scanning stepper.
The exposure apparatus EX includes an exposure apparatus main body 10, a main body chamber 40 that is installed on the floor surface F in the clean room and accommodates the exposure apparatus main body 10, and a machine room 70 disposed adjacent to the main body chamber 40. Prepare.

  The exposure apparatus main body 10 includes an illumination optical system 12 that illuminates the reticle R with exposure light EL, a reticle stage 14 that is movable while holding the reticle R, and a projection that projects the exposure light EL emitted from the reticle R onto the wafer W. An optical system 16, a wafer stage 20 that can move while holding the wafer W, a projection optical system 16, etc., and a main body column 30 on which the wafer stage 20 is mounted and an exposure apparatus EX are controlled in an integrated manner (not shown). A control device and the like are provided.

The illumination optical system 12 illuminates the reticle R supported by the reticle stage 14 with the exposure light EL, and an optical integrator and a condenser that uniformize the illuminance of the exposure light EL emitted from an exposure light source (not shown). A lens, a relay lens system, and a variable field stop for setting the illumination area by the exposure light EL on the reticle R in a slit shape (all not shown) are included.
With such a configuration, the illumination optical system 12 can illuminate a predetermined illumination area on the reticle R with the exposure light EL having a more uniform illuminance distribution.
The exposure light EL emitted from the exposure light source is, for example, an ultraviolet emission line (g line, h line, i line) emitted from a mercury lamp, KrF excimer laser light (wavelength 248 nm), ArF excimer laser light. Ultraviolet light such as (wavelength 193 nm) is used.

The reticle stage 14 performs two-dimensional movement and minute rotation in a plane perpendicular to the optical axis AX of the projection optical system 16 while supporting the reticle R. The reticle R is vacuum-sucked by a reticle suction mechanism provided around a rectangular opening formed in the reticle stage 14.
The position and rotation angle of the reticle R on the reticle stage 14 in a two-dimensional direction are measured in real time by a laser interferometer (not shown), and the measurement result is output to the control device. Then, the controller R drives a linear motor or the like based on the measurement result of the laser interferometer, thereby positioning the reticle R supported by the reticle stage 14.
The reticle stage 14 is supported by a support column 36.

The projection optical system 16 projects and exposes the pattern formed on the reticle R onto the wafer W at a predetermined projection magnification, and is composed of a plurality of optical elements. In the present embodiment, the projection optical system 16 is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system 16 may be either an equal magnification system or an enlargement system.
The projection optical system 16 is inserted into and supported by a hole 34 a provided in the top plate of the main column 34 via a sensor column 35. The sensor column 35 is provided with an FA sensor (not shown).

The wafer stage 20 holds the wafer W, and can move in three directions of freedom in the X direction, the Y direction, and the θZ direction, and a wafer surface that supports the XY table 22 to be movable in the XY plane. A board 24 is provided. Further, a measurement table 23 is provided that performs alignment processing by placing another wafer W during the exposure processing of the wafer W placed on the XY table 22.
A movable mirror 26 is provided on the wafer stage 20, and a laser interferometer 28 is provided at a position facing the movable mirror 26. The position and rotation angle of the wafer stage 20 in the two-dimensional direction are measured in real time by the laser interferometer 28, and the measurement result is output to the control device. The controller drives the linear motor or the like based on the measurement result of the laser interferometer 28, thereby controlling the position, moving speed, and the like of the wafer W held on the wafer stage 20.
The wafer surface plate 24 is formed with a stage exhaust unit 110 that collects air A and returns it to the machine chamber 70. Details will be described later.

The main body column 30 is supported above a base plate 38 installed on the bottom surface of the main body chamber 40 via a plurality of vibration isolation tables 32. The main body column 30 includes a main column 34 supported by a vibration isolation table 32 and a support column 36 provided upright on the main column 34.
The projection optical system 16 is supported on the main frame that is the ceiling of the main column 34. The support column 36 supports the reticle stage 14 and the illumination optical system 12.

The main body chamber 40 includes an exposure chamber 42 in which environmental conditions (cleanness, temperature, pressure, etc.) are maintained substantially constant, and a reticle loader chamber and a wafer loader chamber (not shown) arranged on the side of the exposure chamber 42. It is formed to have. In the exposure chamber 42, the exposure apparatus main body 10 is disposed.
On the upper side surface of the exposure chamber 42, a jet port 50 connected to a machine chamber 70 that supplies temperature-controlled air (gas) A into the main body chamber 40 is provided. The temperature-controlled air A sent from the machine chamber 70 is sent from the jet outlet 50 into the upper space 44 of the exposure chamber 42 by side flow.
A return portion 52 is provided at the bottom of the exposure chamber 42, and one end of a return duct 54 is connected to the lower portion of the return portion 52. The other end of the return duct 54 is connected to the machine room 70.
In addition, a return duct 56 is connected to a plurality of locations on the lower side surface and the bottom surface of the main column 34, and the other end of the return duct 56 is connected to the machine room 70. That is, although not shown, the return duct 56 includes a plurality of branch paths, and each branch path is connected to a plurality of locations on the lower side surface and the bottom surface of the main column 34.
That is, the air A in the exposure chamber 42 is returned from the return portion 52 and the like to the machine chamber 70 via the return ducts 54 and 56.

An air supply line 60 connected to the machine chamber 70 is connected to the side surface of the exposure chamber 42 and further extends into the exposure chamber 42. Inside, a heater 62, a blower 64, a chemical filter CF, and a filter box AF are sequentially arranged.
Further, the air supply line 60 is branched into two branch paths 66a and 66b. One branch path 66a is connected to the inner space 46 of the main column 34 via the temperature stabilization flow path device 80a. The other branch path 66b is connected to the inner space 46 of the main column 34 via the temperature stabilization flow path device 80b.
The temperature stabilization flow path devices 80a and 80b are devices that further accurately regulate the temperature of the air A by performing heat exchange with the air A sent from the air supply pipe 60. Specifically, the temperature stabilization flow path device disclosed in JP-T-2002-101804 is used.
And the temperature control apparatus 90 is connected to each of the temperature stabilization flow path apparatus 80a, 80b via the supply pipe | tube 92 and the discharge pipe 94. FIG. Thereby, a circulation path of the temperature adjusting medium C including the temperature adjusting device 90, the supply pipe 92, the temperature stabilizing flow path devices 80a and 80b, and the discharge pipe 94 is configured.
Further, as the temperature adjustment medium C, for example, Fluorinert (registered trademark) is used, and the temperature is adjusted to a substantially constant temperature by the temperature adjustment device 90. As a result, the temperature of the temperature stabilization flow path devices 80a and 80b is kept constant. As the temperature control medium C, hydrofluoroether (HFE) or water can also be used.

In the vicinity of the ceiling of the inner space 46 of the main column 34, the sheet member 100 is stretched in a substantially horizontal direction, whereby the inner space 46 is introduced into the gas introduction space 46a into which the air A is introduced from the two branch paths 66a and 66b. And a stage space 46b in which the wafer stage 20 is arranged. The substantially central portion of the sheet member 100 is provided with an opening so as not to interfere with the projection optical system 16 (lens barrel) and the sensor column 35 disposed on the outer periphery of the projection optical system 16.
The sheet member 100 is made of a fluororesin (tetrafluoroethylene resin) or the like, and a large number of fine air holes 102 are formed on the surface thereof. Thus, the temperature-controlled air A supplied from the machine room 70 passes through the gas introduction space 46a of the inner space 46 of the main column 34, and then the numerous vent holes 102 (see FIG. 2) of the seat member 100. Is sent to the stage space 46b of the inner space 46 by a down flow. That is, the sheet member 100 forms a gas supply surface 100a that supplies the temperature-controlled air A to the stage space 46b by downflow. The sheet member 100 and the main column 43, and the sheet member 100 and the sensor column 35 are detachably joined by, for example, a zipper. Thereby, the internal pressure of the gas introduction space 46a can be secured and the pressure can be made uniform, and the temperature-controlled air A can be supplied to a wide range of the stage space 46b. Further, unlike the structure, the sheet member 100 is a flexible sheet-like member and can be easily removed. Therefore, a maintenance area can be easily secured when performing maintenance of an optical unit disposed in the gas introduction space 46a, for example, a wafer alignment optical system or an autofocus optical system. Note that the sheet member 100 is not necessarily configured by a single sheet, and may be configured by a plurality of divided sheets that can be separated and joined to each other.

FIG. 2 is a cross-sectional view showing the sheet member 100.
The vent hole 102 formed in the sheet member 100 is formed using laser processing, and has a diameter of about 10 μm, for example. The laser processing method is used because it is easy to arbitrarily set the hole diameter, inclination angle, number, distribution and the like of the vent holes 102. The inclination angle is an inclination angle of the air hole 102 with respect to the surface (gas supply surface) 100a of the sheet member 100, and is formed by projecting a laser beam to the sheet member 100 from an oblique direction. In this case, the air A is sent obliquely downward from the vent hole 102 to the stage space 46b.

  The hole diameter, inclination angle, number, distribution and the like of the vent holes 102 are defined by the movement locus of the XY table 22 of the wafer stage 20 arranged in the stage space 46b. For example, in the optical path space through which the measurement beam of the laser interferometer 28 that measures the position of the XY table 22 passes, air A at a constant temperature is supplied in a downflow with a uniform wind speed in order to prevent measurement errors. There is a need to. Therefore, in the region along the measurement beam of the sheet member 100 located above the optical path space, the air holes 102 having no inclination angle are formed with a uniform distribution. And in the area | region adjacent to the both sides of the area | region along this measurement beam, the inclined ventilation hole 102 which supplies the air A toward the direction away from a measurement beam is formed. This is to prevent air having different temperatures from flowing into the optical path space.

  Further, in a region other than the region along the measurement beam and through which the XY table 22 passes during the exposure operation, the measurement beam is used to prevent the air A on the XY table 22 from flowing into the optical path space. A vent hole 102 having an inclination angle so that air A is sent in a direction away from the air is formed. The hole diameter of the vent hole 102 formed in this region is smaller than the hole diameter in the optical path space. Further, in the regions other than the above, the air holes 102 having no inclination angle are formed with a smaller hole diameter and a coarse distribution than the air holes 102 in the respective regions. Furthermore, an intermediate region that continuously changes the hole diameter, the inclination angle, and the distribution may be provided between the regions. Thus, the entire gas supply surface 100a is formed by a combination of a plurality of types of regions formed on the sheet member 100. In forming the vent hole 102, the arrangement of a laser interferometer (not shown) that measures the position of the measurement cable 23, the movement locus of the measurement table 23, and the positional relationship with the XY table 22 are also taken into consideration.

  As described above, the hole diameter, the inclination angle, the number, the distribution, and the like of the vent hole 102 are the optical path space of the laser interferometer 28 that measures the position of the XY table 22 and the laser interferometer that measures the position of the measurement table 23. In order to prevent the air A having different temperatures from flowing into the optical path space, it is determined on the basis of the movement route, the positional relationship, the standby position, etc. of the respective tables 22 and 23. As a result, it is possible to eliminate the stagnation and fluctuation of the air A in the stage space 46b and prevent the measurement error of the laser interferometer 28 from occurring.

FIG. 3 is a conceptual diagram showing the configuration of the stage exhaust unit 110 provided on the wafer stage 20.
As described above, the wafer stage 20 includes the XY table 22 and the wafer surface plate 24, and the XY table 22 is supported on the wafer surface plate 24 in a non-contact manner via an air bearing (not shown).
An opening penetrating in the Y direction is provided on the side surface of the XY table 22, and a Y guide bar 122 that also serves as a Y linear motor extends from the opening. That is, the XY table 22 is configured to be guided in the Y direction along the Y guide bar 122.
A pair of linear motors 124 that move the XY table 22 greatly in the X direction are disposed at both ends of the wafer stage 20 in the Y direction. The linear motor 124 is disposed at both ends of the Y guide bar 122 and has a movable element 124A that houses a coil winding, and a plate-shaped permanent element that is opposed to the Z-direction surface of the movable element 124A and is stacked in the X direction. It is configured by combining with a stator 124B made of a magnet.

As shown in FIG. 3, a pair of stage exhaust parts 110 having a plurality of exhaust ports 112 are disposed on the wafer surface plate 24.
The stage exhaust unit 110 is disposed inside the linear motor 124 on the wafer surface plate 24 so as to be inserted into a groove (not shown) in a concave shape formed along the X direction. That is, the stage exhaust unit 110 is arranged in an area excluding the moving area of the XY table 22 and the arrangement area of the linear motor 94 on the wafer surface plate 24.
A return duct 58 is connected to each side surface of each stage exhaust unit 110 in the X direction. The return duct 58 is connected to the return duct 56 (see FIG. 1). As a result, the air A in the vicinity of the wafer stage 20 is fed into the stage exhaust unit 110 from a plurality of exhaust ports 112 formed on the wafer surface plate 24, and the machine room 70 is passed through the return ducts 58 and 56. It is supposed to be returned to.
In addition, each exhaust port 112 in the stage exhaust unit 110 is configured to be openable and closable by an unillustrated electromagnetic valve or the like. The reason why the exhaust port 112 is configured to be openable and closable as described above is to enable selection of the exhaust port 112 to be opened in accordance with the movement of the XY table 22. In other words, even if the XY table 22 moves, the flow of the surrounding air A is not disturbed. A method for opening and closing the exhaust port 112 of the stage exhaust unit 110 will be described later.

Next, the operation of the exposure apparatus EX, particularly the air conditioning method will be described.
First, the machine room 70 is operated by the control device, and the temperature-controlled air A is supplied toward the exposure room 42. Thereby, in the exposure chamber 42, the temperature-controlled air A is sent from the jet nozzle 50 to the upper space 44 of the exposure chamber 42 with a uniform side flow.
In addition, the temperature-controlled air A is fed into the gas introduction space 46 a partitioned by the sheet member 100 in the inner space 46 of the main column 34 through the branch paths 66 a and 66 b. The air A sent into the gas introduction space 46a passes through the plurality of vent holes 102 formed in the sheet member 100 and is sent into the stage space 46b. At this time, the air A sent into the gas introduction space 46a is sent through the vent hole 102 after being in a substantially constant pressure state in the gas introduction space 46a. Therefore, the air A having a substantially constant pressure is sent into the stage space 46b.
Further, since the plurality of vent holes 102 formed in the sheet member 100 are defined by the movement locus of the XY table 22 of the wafer stage 20 disposed in the stage space 46b, the air A sent into the stage space 46b. Flows smoothly downward substantially without causing stagnation or fluctuation in the stage space 46b. This prevents the occurrence of measurement errors in the laser interferometer 28 and the like. In addition, since the temperature of the wafer stage 20 disposed in the stage space 46b is controlled almost uniformly, the wafer stage 20 can be functioned (driven) with high accuracy.

Further, by providing the pair of stage exhaust parts 110 on the wafer surface plate 24, the air A supplied from the gas supply surface 100a is exhausted without colliding with the wafer surface plate 24 and disturbing the flow. Therefore, a stable flow of air A can be generated in the stage space 46b.
In addition, by controlling the opening and closing of each exhaust port 112 in the stage exhaust unit 110, the air A sent toward the wafer stage 20 flows smoothly even when the XY table 22 is moving. Adjusted.
4 and 5 are diagrams for explaining a change in the flow of air A on the wafer stage 20. 4 and 5, the measurement table 23 is omitted.
As shown in FIG. 4, when all the exhaust ports 112 of the stage exhaust unit 110 are always opened, the air A is exhausted on the −X direction side of the wafer surface plate 24 when the XY table 22 moves in the + X direction. Since the number of exhaust ports 112 to be increased increases, the air A in the stage space 46b is rapidly exhausted, and the pressure drop and the flow velocity increase of the air A occur. On the other hand, on the + X direction side of the wafer surface plate 24, since the number of the exhaust ports 112 for exhausting the air A decreases, it becomes difficult to exhaust the air A, and the pressure of the air A increases and the flow velocity decreases. That is, as the XY table 22 moves, the opening area of the exhaust port 112 that exhausts the air A changes on both sides in the X direction of the XY table 22, so that the flow state of the air A is disturbed. For this reason, even if all the exhaust ports 112 of the stage exhaust unit 110 are always opened, stagnation and fluctuation of the air A occur in the stage space 46b due to the movement of the XY table 22.
On the other hand, as shown in FIG. 5, when each exhaust port 112 of the stage exhaust unit 110 is opened and closed according to the movement of the XY table 22, Since a difference in flow velocity is prevented, it is possible to eliminate stagnation and fluctuation of the air A from the stage space 46b.
That is, the opening / closing of each exhaust port 112 of the stage exhaust unit 110 is controlled so as to follow the movement of the XY table 22. In other words, each exhaust port 112 is opened and closed so that the position (exhaust position) and area (exhaust area) of the exhaust port 112 that opens are substantially constant on both sides in the X direction of the XY table 22. Thereby, although the direction of the flow of the air A slightly changes on both sides of the XY table 22 in the X direction, it is reliably prevented that a difference in the pressure or flow velocity of the air A occurs. Therefore, the air A such as the optical path space of the laser interferometer 28 that measures the position of the XY table 22 is maintained substantially constant without being disturbed, thereby preventing measurement errors.

The air A sent into the stage space 46 b is exhausted from the stage exhaust part 110 to the return duct 58, exhausted from the lower end side surface of the main column 34, etc. to the return duct 56, and returned to the machine room 70.
Further, the air A sent into the exposure chamber 42 is exhausted to the return duct 54 and returned to the machine chamber 70.
Thus, the exposure chamber 42 and the inner space 46 of the main column 34 are air-conditioned.

Then, exposure processing by the exposure apparatus main body 10 is performed in a state where such temperature control is performed. Specifically, a pattern is formed after exposure light EL emitted from an exposure light source (not shown) is shaped to a required size and illuminance uniformity in the illumination optical system 12 including various lenses and mirrors. The reticle R is illuminated, and the pattern formed on the reticle R is reduced and transferred to each shot area on the wafer W held on the wafer stage 20 via the projection optical system 16.
Thereby, a fine pattern is formed on the wafer W with high accuracy.

As described above, according to the exposure apparatus EX of the present invention, in the inner space 46 of the main column 34, the sheet member 100 formed with a plurality of vent holes 102 in a flexible material is stretched. Since the gas A is partitioned into the gas introduction space 46a and the stage space 46b and the air A is supplied to the stage space 46b through the vent hole 102, the stage space has a simple structure compared to a metal duct or the like. The air A having a uniform flow can be supplied to 46b. In particular, it is possible to secure a work space for performing maintenance of the wafer stage 20 and the like simply by removing the sheet member 100 made of a flexible material, so that maintenance can be performed efficiently.
In addition, since the inclination angle, hole diameter, number (arrangement), and the like of the vent hole 102 are defined based on the movement trajectory of the XY table 22 of the wafer stage 20, the stagnation of the air A over almost the entire surface of the stage space 46b. Fluctuations can be effectively eliminated.
Furthermore, since the stage exhaust unit 110 having a plurality of exhaust ports 112 is provided on the wafer surface plate 24 and the exhaust ports 112 are opened and closed in accordance with the movement of the XY table 22, laser interference for measuring the position of the XY table 22 is achieved. The flow of the air A in the optical path space of the total 28 can be maintained substantially constant. As a result, it is possible to prevent the measurement error of the laser interferometer 28 caused by the fluctuation of the air A or the like.

Although the embodiment of the present invention has been described above, the operation procedure shown in the above-described embodiment, or the shapes and combinations of the constituent members are examples, and the design is made without departing from the gist of the present invention. Various changes can be made based on the requirements.
For example, the present invention includes the following modifications.

  For example, the branch paths 66a and 66b for introducing the air A into the gas introduction space 46a are not limited to two. It is desirable that more branch paths are connected. This is because the air A introduced into the gas introduction space 46a surely has a substantially uniform pressure.

  In order to stretch the sheet member 100 in the inner space 46 of the main column 34, the sheet member 100 and the main column 34 may be joined by a magnetic sheet, or may be joined by an adhesive seal. Good. Alternatively, the sheet member 100 may be stretched in advance on the frame member, and the frame member may be fitted into the main column 34.

Further, although the laser processing method has been described as the method for forming the air holes 102, other methods may be used. Further, the material of the sheet member 100 is not limited to the fluororesin, and other resin materials, a thin metal sheet having flexibility, or a composite material thereof can also be used.
Furthermore, a mesh sheet knitted with metal fibers may be used. In this case, the air A ejection direction cannot be defined, but the air volume distribution of the air A can be defined by adjusting the braiding density.

  As a method for opening and closing each exhaust port 112 of the stage exhaust unit 110, the case where an electromagnetic valve is used has been described, but the method is not limited thereto. For example, as shown in FIG. 6, a strip-shaped sheet member in which a plurality of exhaust ports are formed may be moved by a motor or the like. That is, the plurality of exhaust ports may be moved together with the XY table 22 instead of opening and closing the plurality of exhaust ports. In this case, a linear motor 124 may be used instead of the motor or the like.

  In the above embodiment, the case where a KrF excimer laser, an ArF excimer laser, or the like is used as a light source has been described. However, the present invention is not limited to this, and an F2 laser or Ar2 laser may be used as a light source, or a metal vapor laser or a YAG laser is used. These harmonics may be used as exposure illumination light. Alternatively, infrared or visible single wavelength laser light oscillated from a DFB semiconductor laser or fiber laser is amplified by a fiber amplifier doped with, for example, erbium (Er) (or both erbium and ytterbium (Yb)). Then, a harmonic wave converted to ultraviolet light using a nonlinear optical crystal may be used as illumination light for exposure.

In the above embodiment, the step-and-repeat type exposure apparatus has been described as an example. However, the present invention can also be applied to a step-and-scan type exposure apparatus. Furthermore, the present invention is not limited to an exposure apparatus used for manufacturing a semiconductor element, but also used for manufacturing a display including a liquid crystal display element (LCD) and the like. An exposure apparatus for transferring a device pattern onto a glass plate, and a thin film magnetic head. The present invention can also be applied to an exposure apparatus that is used for manufacturing and transfers a device pattern onto a ceramic wafer, and an exposure apparatus that is used to manufacture an image sensor such as a CCD.
The projection optical system 16 may be any of a refraction system, a catadioptric system, and a reflection system, and may be any one of a reduction system, an equal magnification system, and an enlargement system.
Furthermore, in an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer in order to manufacture a reticle or mask used in an optical exposure apparatus, EUV exposure apparatus, X-ray exposure apparatus, electron beam exposure apparatus, or the like. The present invention can also be applied. Here, in an exposure apparatus using DUV (far ultraviolet) light, VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. Further, in a proximity type X-ray exposure apparatus or an electron beam exposure apparatus, a transmission mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate.
Such an exposure apparatus is disclosed in WO99 / 34255, WO99 / 50712, WO99 / 66370, JP-A-11-194479, JP-A2000-12453, JP-A-2000-29202, and the like. .

  In addition, the present invention appropriately applies necessary liquid countermeasures to an immersion exposure apparatus that forms a predetermined pattern on a substrate via a liquid supplied between the projection optical system and the substrate (wafer). Is applicable. The structure and exposure operation of the immersion exposure apparatus are disclosed in, for example, WO99 / 49504 pamphlet, JP-A-6-124873, and JP-A-10-303. The present invention can also be applied to a twin stage type exposure apparatus. The structure and exposure operation of a twin stage type exposure apparatus are disclosed in, for example, Japanese Patent Laid-Open Nos. 10-163099, 10-214783, 2000-505958, or US Pat. No. 6,208,407. In addition, as disclosed in JP-A-11-135400, the present invention includes an exposure stage that can move while holding a substrate to be processed such as a wafer, and a measurement stage that includes various measurement members and sensors. The present invention can also be applied to other exposure apparatuses.

  An exposure apparatus to which the present invention is applied is a light transmissive mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light transmissive substrate, or a light transmissive substrate. For example, a transmission pattern based on electronic data of a pattern to be exposed, such as disclosed in US Pat. No. 6,778,257, is not limited to the one using a light reflection type mask on which a reflection pattern is formed. Alternatively, it may be an exposure apparatus using an electronic mask that forms a reflection pattern or a light emission pattern.

As described in JP-A-8-330224 (corresponding to US Pat. No. 5,874,820), the reaction force generated by the movement of the reticle stage is not mechanically transmitted to the projection optical system using a frame member. You may escape to the floor (ground).
Further, the reaction force generated by the movement of the wafer stage is not transmitted to the projection optical system by using a frame member as described in JP-A-8-166475 (corresponding USP 5,528, 126). You may mechanically escape to the floor (ground).

Next, an embodiment of a manufacturing method of a micro device using the exposure apparatus and the exposure method according to the embodiment of the present invention in the lithography process will be described.
FIG. 7 is a flowchart showing a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micro machine, etc.).
First, in step S10 (design step), function / performance design (for example, circuit design of a semiconductor device) of a micro device is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S13 (wafer processing step), using the mask and wafer prepared in steps S10 to S12, an actual circuit or the like is formed on the wafer by lithography or the like, as will be described later. Next, in step S14 (device assembly step), device assembly is performed using the wafer processed in step S13. This step S14 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S14 are performed. After these steps, the microdevice is completed and shipped.

FIG. 8 is a diagram illustrating an example of a detailed process of step S13 in the case of a semiconductor device.
In step S21 (oxidation step), the surface of the wafer is oxidized. In step S22 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S24 (ion implantation step), ions are implanted into the wafer. Each of the above steps S21 to S24 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, in step S25 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in step S27 (development step), the exposed wafer is developed, and in step S28 (etching step), the exposed members other than the portion where the resist remains are removed by etching. In step S29 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.

  Further, the present invention can be applied not only to microdevices such as semiconductor elements but also to the production of reticles or masks used in optical exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, and the like.

It is a schematic diagram which shows the structure of the exposure apparatus EX which concerns on this embodiment. 2 is an enlarged cross-sectional view showing a sheet member 100. FIG. 2 is a conceptual diagram showing a configuration of a stage exhaust unit 110. FIG. FIG. 6 is a diagram for explaining a change in the flow of air A on the wafer stage 20. FIG. 6 is a diagram for explaining a change in the flow of air A on the wafer stage 20. It is a conceptual diagram which shows the modification of the stage exhaust part 110. FIG. It is a flowchart figure which shows an example of the manufacturing process of a microdevice. It is a figure which shows an example of the detailed process of step S13 in FIG.

Explanation of symbols

EX ... Exposure apparatus W ... Wafer A ... Air 22 ... XY table 24 ... Wafer surface plate 46 ... Inner space 46a ... Gas introduction space 46b ... Stage space 70 ... Machine room 100 ... Sheet member 100a ... Surface 102 ... Vent 110 ... Stage Exhaust part 112 ... Exhaust port


Claims (8)

  1. A stage capable of holding and moving an object;
    A sheet member that partitions the space in which the stage is disposed into a first space in which the stage is accommodated and a second space into which gas flows from a gas supply source;
    The sheet member includes a plurality of vent holes communicating the first space and the second space, and forms a gas supply surface for supplying gas to the first space, and is a flexible material. An exposure apparatus characterized by being formed.
  2.   The exposure apparatus according to claim 1, wherein the sheet member is configured to be detachable.
  3.   The exposure apparatus according to claim 1, wherein at least a part of the vent hole is formed to be inclined with respect to a surface of the sheet member.
  4.   4. The exposure apparatus according to claim 3, wherein the vent hole has at least one of an inclination angle, a hole diameter, a number, and a distribution defined based on a movement locus of the stage.
  5. A surface plate that movably supports the stage,
    5. The exposure according to claim 1, wherein the surface plate is provided to face the sheet member and includes an exhaust unit that exhausts the gas in the first space. apparatus.
  6.   6. The exposure apparatus according to claim 5, wherein the exhaust unit is capable of changing an exhaust position on the surface plate in accordance with the position of the stage.
  7.   6. The exposure apparatus according to claim 5, wherein the exhaust unit is adjustable so that an exhaust area is substantially constant regardless of a change in an exhaust position.
  8. A device manufacturing method including a lithography step, wherein the exposure apparatus according to claim 1 is used in the lithography step.


JP2005108538A 2005-04-05 2005-04-05 Exposure device and manufacturing method therefor Pending JP2006287160A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011081049A (en) * 2009-10-05 2011-04-21 Hitachi High-Technologies Corp Exposing device
JP2011248381A (en) * 2011-08-29 2011-12-08 Asahikogyosha Co Ltd Nozzle structure for glass substrate temperature adjustment
JP2012027047A (en) * 2010-05-21 2012-02-09 Asahi Kogyosha Co Ltd Nozzle structure for controlling temperature of glass substrate

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JPH0397216A (en) * 1989-09-11 1991-04-23 Hitachi Ltd Projection aligner
JPH05126522A (en) * 1991-11-01 1993-05-21 Nikon Corp Length-measuring device
JPH08266988A (en) * 1995-03-31 1996-10-15 Trinity Ind Corp Painting booth fitted with air supply means
JP2001133959A (en) * 1999-11-08 2001-05-18 Nikon Corp Mask substrate, pattern protective material, mask protective device and mask as well as exposure device and method for manufacturing device
WO2002101804A1 (en) * 2001-06-11 2002-12-19 Nikon Corporation Exposure device, device manufacturing method, and temperature stabilization flow passage device
JP2004266051A (en) * 2003-02-28 2004-09-24 Canon Inc Exposure system
JP2005043021A (en) * 2003-07-25 2005-02-17 Nikon Corp Air conditioner, position sensor and exposure device
JP2005079585A (en) * 2003-08-29 2005-03-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0397216A (en) * 1989-09-11 1991-04-23 Hitachi Ltd Projection aligner
JPH05126522A (en) * 1991-11-01 1993-05-21 Nikon Corp Length-measuring device
JPH08266988A (en) * 1995-03-31 1996-10-15 Trinity Ind Corp Painting booth fitted with air supply means
JP2001133959A (en) * 1999-11-08 2001-05-18 Nikon Corp Mask substrate, pattern protective material, mask protective device and mask as well as exposure device and method for manufacturing device
WO2002101804A1 (en) * 2001-06-11 2002-12-19 Nikon Corporation Exposure device, device manufacturing method, and temperature stabilization flow passage device
JP2004266051A (en) * 2003-02-28 2004-09-24 Canon Inc Exposure system
JP2005043021A (en) * 2003-07-25 2005-02-17 Nikon Corp Air conditioner, position sensor and exposure device
JP2005079585A (en) * 2003-08-29 2005-03-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011081049A (en) * 2009-10-05 2011-04-21 Hitachi High-Technologies Corp Exposing device
JP2012027047A (en) * 2010-05-21 2012-02-09 Asahi Kogyosha Co Ltd Nozzle structure for controlling temperature of glass substrate
JP2011248381A (en) * 2011-08-29 2011-12-08 Asahikogyosha Co Ltd Nozzle structure for glass substrate temperature adjustment

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