JP2010182788A - Stage device, and exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stage device capable of suppressing disturbance. <P>SOLUTION: The stage device has a moving body 2a which holds and moves a body P. Further, the stage device includes a suction device 84 which makes the moving body suck and holds the body by negative-pressure suction, and a temperature control device CC which can control the temperature of the body held by the suction device by supplying a temperature-controlled gas to the moving body. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a stage apparatus and an exposure apparatus.

  In an exposure apparatus used in a photolithography process, for example, an EUV exposure apparatus that uses extreme ultra-violet (EUV) light as exposure light has been devised as disclosed in Patent Document 1 below.

JP 2005-32510 A

However, the following problems exist in the conventional technology as described above.
In an EUV exposure apparatus, a predetermined space in which exposure light travels, that is, the periphery of the substrate such as a reticle or wafer is adjusted to a vacuum state, so the temperature of the substrate is adjusted by heat exchange (heat conduction) with the air around the substrate. We cannot expect to adjust. Therefore, it is conceivable to adjust the temperature of the substrate by exchanging heat with the holder by circulating the coolant through the holder that holds the substrate. However, when a refrigerant circulation pipe is connected to the holder, vibrations and forces transmitted to the holder through the pipe may be disturbed, leading to a decrease in accuracy.
In particular, when a liquid is used as the refrigerant, there is a high possibility that vibration accompanying the flow of the liquid becomes a disturbance and causes a decrease in accuracy.

  The present invention has been made in view of the above points, and an object thereof is to provide a stage apparatus and an exposure apparatus that can suppress the occurrence of disturbance.

In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 6 showing the embodiment.
The stage device of the present invention is a stage device (ST) having a moving body (2a) that holds and moves an object (P), and a suction device (84) that sucks and holds an object on the moving body by negative pressure suction. And a temperature adjusting device (CC) capable of adjusting the temperature of the object held by the suction device by supplying the temperature-adjusted gas to the moving body.
Therefore, in the stage apparatus of the present invention, since gas is supplied as the refrigerant, it is possible to suppress disturbance such as vibration transmitted to the moving body via the pipe.

The stage apparatus of the present invention is a stage apparatus (ST) having a moving body (2a) that moves while holding the object (P), and is a gas supply apparatus (ST) that supplies temperature-adjusted gas to the moving body ( 81) and a pressure adjusting device (82) for adjusting the temperature of the gas by adjusting the pressure of the supplied gas.
Therefore, in the stage apparatus of the present invention, since gas is supplied as the refrigerant, it is possible to suppress disturbance such as vibration transmitted to the moving body via the pipe. Moreover, in this invention, since the temperature of gas is adjusted by pressure adjustment, while the apparatus which concerns on adjustment can be reduced in size, it becomes possible to improve responsiveness and can implement | achieve rapid temperature control.

The exposure apparatus of the present invention includes the stage device (ST) described above.
Therefore, the exposure apparatus of the present invention can control the temperature of the moving body and the object while suppressing the occurrence of disturbance.
In order to explain the present invention in an easy-to-understand manner, the description has been made in association with the reference numerals of the drawings showing one embodiment, but it goes without saying that the present invention is not limited to the embodiment.

  In the present invention, it is possible to suppress the occurrence of disturbance when adjusting the temperature of an object.

1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. It is a perspective view which shows the structure of the substrate stage apparatus which concerns on this embodiment. It is sectional drawing which shows the principal part of the substrate stage apparatus which concerns on 1st Embodiment. It is sectional drawing which shows the principal part of the substrate stage apparatus which concerns on 2nd Embodiment. It is a flowchart which shows an example of the manufacturing process of a microdevice. It is a figure which shows an example of the detailed process of step S13 in FIG.

Hereinafter, an embodiment of the stage apparatus of the present invention will be described with reference to FIGS.
In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. In each of the following drawings, the predetermined direction in the horizontal plane is the X-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, the direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, the vertical direction). Is the Z-axis direction. The rotation (inclination) directions around the X, Y, and Z axes are the θX, θY, and θZ directions, respectively. In the present embodiment, a case where the stage apparatus of the present invention is applied to a substrate stage in an exposure apparatus will be described.

(First embodiment)
FIG. 1 is a schematic block diagram that shows the exposure apparatus EX.
In the present embodiment, a case where the exposure apparatus EX is an EUV exposure apparatus that exposes the substrate P with extreme ultra-violet (EUV) light will be described as an example. Extreme ultraviolet light is an electromagnetic wave in a soft X-ray region having a wavelength of about 5 to 50 nm, for example. In the following description, extreme ultraviolet light is appropriately expressed as EUV light. As an example, in the present embodiment, EUV light having a wavelength of 13.5 nm is used as the exposure light EL.

  As shown in FIG. 1, the exposure apparatus EX includes a stage apparatus ST including a mask stage apparatus 1 that can move while holding a mask M on which a pattern is formed, and a substrate stage apparatus 2 that can move while holding a substrate P. A light source device 3 that generates the exposure light EL, an illumination optical system IL that illuminates the mask M with the exposure light EL from the light source device 3, and an image of the pattern of the mask M illuminated with the exposure light EL on the substrate P. A projection optical system PL for projecting and a control device 4 for controlling the operation of the entire exposure apparatus EX are provided. The substrate P includes a substrate in which a film such as a photosensitive material (resist) is formed on the surface of a base material such as a semiconductor wafer. The mask M includes a reticle on which a device pattern projected onto the substrate P is formed.

  In the present embodiment, the mask M is a reflective mask having a multilayer film capable of reflecting EUV light. The exposure apparatus EX illuminates the surface (reflection surface) of the mask M, on which the pattern is formed of the multilayer film, with the illumination light EL (EUV light), and the substrate P having photosensitivity with the exposure light EL reflected by the mask M. Exposure.

  The exposure apparatus EX of the present embodiment has a chamber apparatus 6. The chamber device 6 covers the third space 5 in which the exposure light EL travels, and can set the third space 5 in a predetermined state environment. The chamber device 6 includes a third space forming member 7 that forms the third space 5 and a first adjusting device 8 that adjusts the environment of the third space 5.

The first adjustment device 8 includes a vacuum system and adjusts the third space 5 to a vacuum state. The control device 4 uses the first adjustment device 8 to adjust the third space 5 in which the exposure light EL travels to a substantially vacuum state. As an example, in the present embodiment, the pressure in the third space 5 is adjusted to a reduced pressure atmosphere of about 1 × 10 ⁻⁷ [Pa].

The illumination light emitted from the light source device 3 travels through the third space 5. In the third space 5, at least a part of the illumination optical system IL and the projection optical system PL are arranged. The illumination light emitted from the light source device 3 illuminates the mask M through the illumination optical system IL disposed in the third space 5.
The illumination light illuminated on the mask M becomes exposure light EL including information on the pattern image of the mask M and passes through the projection optical system PL. In the present embodiment, the substrate stage apparatus 2 is disposed in the third space 5.

  In the description of the present embodiment, the EUV light from the light source device 3 until it illuminates the mask M is described as illumination light, and the EUV light that is reflected by the mask M and projected onto the substrate P is described as exposure light EL. However, for convenience of explanation, the names are properly used, and both may be handled as the exposure light EL.

  The third space forming member 7 has a first opening 9 and a first surface 11 provided around the first opening 9. The first opening 9 is formed at a position where illumination light that has traveled through the third space 5 can enter. In the present embodiment, the first opening 9 is formed at a position where illumination light emitted from the illumination optical system IL can enter.

  The mask stage apparatus 1 is configured to move the mask M while holding the mask M, and is arranged to cover the first opening 9. The mask stage apparatus 1 has a second surface 12 facing the first surface 11 provided on the third space forming member 7 (guide member 18), and the second surface 12 is being guided by the first surface 11. Relative movement with the first opening 9 is possible. In the present embodiment, the gas seal mechanism 10 is formed between the first surface 11 of the third space forming member 7 and the second surface 12 of the mask stage apparatus 1. At this time, a predetermined gap G <b> 1 is formed between the first surface 11 and the second surface 12. The gap G1 is adjusted to a predetermined amount (for example, about 0.1 to 1 μm), and the gas is prevented from flowing into the third space 5 through the gap G1. In the present embodiment, the first opening 9 is covered with the mask stage device 1, and as described above, the gas seal mechanism 10 is formed between the first surface 11 and the second surface 12, so that the third The space 5 is almost sealed. Thereby, the chamber apparatus 6 can control the 3rd space 5 to a predetermined state (vacuum state).

  The mask stage apparatus 1 holds the mask M so that the mask M is arranged in the third space 5 through the first opening 9. In the present embodiment, the mask stage apparatus 1 is disposed on the + Z side of the third space 5 and holds the mask M so that the reflective surface of the mask M faces the −Z side (the third space 5 side). In the present embodiment, the mask stage apparatus 1 holds the mask M so that the reflective surface of the mask M and the XY plane are substantially parallel. The illumination light emitted from the illumination optical system IL is applied to the reflection surface of the mask M held by the mask stage apparatus 1.

  The mask stage apparatus 1 will be described in more detail. The mask stage apparatus 1 is configured to be larger than the first opening 9, have a second surface 12, and is configured to be movable with respect to the first surface 11 and the first opening. The first stage 13 includes a second stage 14 that is smaller than the first opening 9 and configured to be movable with respect to the first stage 13 while holding the mask M. The first stage 13 is disposed so as to cover the first opening 9, and the gas seal mechanism 10 is formed between the second surface 12 of the first stage 13 and the first surface 11 of the third space forming member 7. The The first stage 13 is movable with respect to the first surface 11 and the first opening 9 while being guided by the first surface 11. The second stage 14 is disposed on the −Z side (third space 5 side) of the first stage 13. The mask M held on the second stage 14 is disposed in the third space 5 through the first opening 9. The second stage 14 is movable with respect to the first stage 13 while holding the mask M. With such a configuration, the first stage 13 can function as a coarse movement stage for moving the mask M, and the second stage 14 can function as a fine movement stage for moving the mask M. Note that the first stage 13 and the second stage 14 have drive devices that move each stage, although not shown.

The chamber device 6 includes a second member 16 that forms the fourth space 15 between the outer surface of the third space forming member 7 and a second adjustment device 17 that adjusts the environment of the fourth space 15. ing. The fourth space 15 accommodates at least a part of the mask stage apparatus 1 (for example, the first stage 13 or the like). In the present embodiment, the outside of the third space 5 and the fourth space 15 is an atmospheric space, and the pressure is atmospheric pressure. The second adjustment device 17 adjusts the fourth space 15 to a pressure higher than the pressure of the third space 5 and lower than the atmospheric pressure. As an example, in the present embodiment, the pressure in the fourth space 15 is adjusted to a reduced pressure atmosphere of about 1 × 10 ⁻¹ [Pa].

  With the configuration described above, at least a part of the mask stage apparatus 1 is disposed in the fourth space 15, and the mask M held by the mask stage apparatus 1 is disposed in the third space 5.

The exposure apparatus EX is a scanning exposure apparatus (so-called scanning stepper) that projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P in a predetermined scanning direction in synchronization.
In the present embodiment, the scanning direction (synchronous movement direction) of the mask M is the Y-axis direction, and the scanning direction (synchronous movement direction) of the substrate P is also the Y-axis direction. The exposure apparatus EX moves the shot area of the substrate P in the Y-axis direction with respect to the projection area of the projection optical system PL, and synchronizes with the movement of the shot area of the substrate P in the Y-axis direction. While moving the pattern formation region of the mask M with respect to the illumination region of the IL in the Y-axis direction, the mask M is illuminated with the exposure light EL, and the substrate P is irradiated with the exposure light EL from the mask M. Expose P.

  The first stage 13 of the mask stage apparatus 1 is arranged in the Y-axis direction so that the entire pattern formation region of the mask M passes through the illumination region of the illumination optical system IL during scanning exposure of one shot region on the substrate P. It has a relatively large stroke in the scanning direction). As the first stage 13 moves in the Y-axis direction, the second stage 14 supported by the first stage 13 also moves in the Y-axis direction together with the first stage 13. Accordingly, when the first stage 13 moves in the Y-axis direction, the mask M held by the second stage 14 also moves in the Y-axis direction together with the first stage 13. The second stage 14 is slightly movable with respect to the first stage 13, and moves with a stroke smaller than the stroke of the first stage 13. Further, the second stage 14 may be movable with respect to the first stage 13 in the X direction with a small stroke.

  Further, the gas seal mechanism 10 is formed between the first surface 11 of the third space forming member 7 and the second surface 12 of the first stage 13, and the first stage 13 with respect to the third space forming member 7. Even when the gas is moved, the inflow of gas into the third space 5 is suppressed. In the present embodiment, a gap adjusting mechanism for adjusting the gap G 1 between the first surface 11 and the second surface 12 is provided, and the first stage 13 is moved relative to the third space forming member 7. Even in this state, the gap G1 between the first surface 11 and the second surface 12 is maintained at a predetermined amount. Thereby, even when the 1st stage 13 is moved with respect to the 3rd space formation member 7, it is suppressed that gas flows into the 3rd space 5 inside.

  The third space forming member 7 includes a guide member 18 on which the first surface 11 is formed, and a chamber member 19 facing at least a part of the guide member 18. The guide member 18 guides the movement of the mask stage apparatus 1. The mask stage apparatus 1 (first stage 13) moves relative to the first opening 9 while being guided by the first surface 11 of the guide member 18 as described above.

  The chamber device 6 includes a bellows member 20 that connects the guide member 18 and the chamber member 19 in addition to the third space forming member 7 and the first adjusting device 8. The bellows member 20 has flexibility and is elastically deformable. In the present embodiment, the bellows member 20 is made of stainless steel. Stainless steel has less outgassing. Therefore, the influence which the bellows member 20 has on the third space 5 can be suppressed. Note that the bellows member 20 is used as an example, and a material other than stainless steel can be used as long as the influence of degassing is small.

  The third space forming member 7 has a first opening 9 and a first surface 11, and is configured to include a guide member 18 and a chamber member 19. The guide member 18, the chamber member 19, the bellows member 20, the mask stage device 1 (mainly the first stage 13), and the chamber member SC provided in the stage device ST (part of the container, details will be described later). A substantially sealed third space 5 is formed. The chamber member 19 has an upper surface 19A facing the lower surface 18B of the guide member 18, and the bellows member 20 is disposed so as to connect the lower surface 18B of the guide member 18 and the upper surface 19A of the chamber member 19.

  In the present embodiment, the exposure apparatus EX includes a base member 21 and a first support member 23 supported on the base member 21 via a first vibration isolation system 22. The chamber member 19 is supported by the first support member 23. A first frame member 24 is disposed on the base member 21. The first frame member 24 includes a support portion 25 and a support portion 26 connected to the upper end of the support portion 25. A second support member 27 that supports the lower surface of the guide member 18 is connected to the support portion 26. The chamber member 19 and the second support member 27 are separated from each other. The chamber member 19 and the first frame member 24 are separated from each other, and a flexible (elastic) sealing mechanism such as a bellows member is disposed between the chamber member 19 and the first frame member 24. The chamber member 19 has an upper surface 19A facing the lower surface 18B of the guide member 18 supported by the second support member 27. The bellows member 20 is disposed so as to connect the lower surface 18B of the guide member 18 and the upper surface 19A of the chamber member 19.

  The light source device 3 is a so-called LPP (Laser Produced Plasma) light source that irradiates a target material such as xenon (Xe) with laser light, converts the target material into plasma, and generates EUV light. Device. The light source device 3 is a so-called DPP (Discharge Produced Plasma) type light source device that generates discharge in a predetermined gas, plasmifies the predetermined gas, and generates EUV light. Also good. EUV light (illumination light) generated by the light source device 3 enters the illumination optical system IL through a wavelength selection filter (not shown). Here, the wavelength selection filter has a characteristic of selectively transmitting only EUV light having a predetermined wavelength (for example, 13.4 nm) from light supplied from the light source device 3 and blocking transmission of light of other wavelengths. The EUV light that has passed through the wavelength selection filter illuminates a reflective mask (reticle) M on which a pattern to be transferred is formed via the illumination optical system IL.

  The illumination optical system IL illuminates the mask M with the exposure light EL from the light source device 3. The illumination optical system IL includes a plurality of optical elements, and illuminates a predetermined illumination area on the mask M with the exposure light EL having a uniform illuminance distribution. The optical element of the illumination optical system IL includes a multilayer film reflecting mirror including a multilayer film capable of reflecting EUV light. The multilayer film of the optical element includes, for example, a Mo / Si multilayer film.

  The first stage 13 of the mask stage apparatus 1 is movable in three directions, ie, the X axis, the Y axis, and the θZ direction while holding the mask M. The second stage 14 of the mask stage apparatus 1 is movable in six directions including the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions while the mask M is held. In the present embodiment, a laser interferometer (not shown) that can measure the position information of the mask stage apparatus 1 (mask M) and a focus / leveling detection system (not shown) that can detect the surface position information of the reflecting surface of the mask M. The control device 4 controls the position of the mask M held by the mask stage device 1 based on the measurement result of the laser interferometer and the detection result of the focus / leveling detection system.

  The first stage 13 and the second stage 14 of the mask stage apparatus 1 are made of metal. As an example, the first stage 13 and the second stage 14 of the present embodiment are made of stainless steel with less outgassing (outgassing).

  Projection optical system PL includes a plurality of optical elements, and projects an image of the pattern of mask M onto substrate P at a predetermined projection magnification. The optical element of the projection optical system PL includes a multilayer reflector having a multilayer film capable of reflecting EUV light. The multilayer film of the optical element includes, for example, a Mo / Si multilayer film.

  A plurality of optical elements of the projection optical system PL are held by the lens barrel 28. The lens barrel 28 has a flange 29. The lower end of the second frame member 30 is connected to the flange 29. The upper end of the second frame member 30 is connected to the support portion 26 of the first frame member 24 via a vibration isolation system 31. The lens barrel 28 (flange 29) is suspended from the second frame member 30.

FIG. 2 is an external perspective view of the substrate stage apparatus 2.
A substrate stage apparatus 2 shown in FIG. 2 includes a surface plate JB, a main body stage (moving body) 2a as a coarse movement stage that holds a substrate (object) P such as a wafer and can move in the X direction and the Y direction. have. The main body stage 2a is movable in the X and Y directions with a relatively large stroke. The main body stage 2a holds the substrate P and can move with six degrees of freedom in the X, Y, Z, θx, θy, and θz directions with a relatively small stroke relative to the main body stage 2a. As a substrate holder 40. The substrate holder 40 has an electrostatic chuck device (a suction device, not shown) that holds the substrate P with electrostatic force.

  The driving device for driving the main body stage 2a includes a first driving system 90 for driving the main body stage 2a in the X direction with a long stroke, and a second driving for driving the main body stage 2a and the first driving system 90 in the Y direction with a long stroke. Systems 73A and 73B are provided. The driving of the first drive system 90 and the second drive systems 73A and 73B is controlled by the control device 4.

The second drive system 73A has a linear motor, and this linear motor is composed of a stator 74A extending in the Y direction and a mover 75A driven with respect to the stator 74A.
The mover 75A has a magnet inside. A plurality of magnets are mounted side by side in the Y-axis direction, and magnets having different magnetic poles are alternately arranged. The stator 90A of the first drive system 90 and the movers 75A and 75B of the second drive systems 73A and 73B are integrally formed via connection members 70 and 71, respectively.

  As shown in FIG. 3, the substrate holder 40 is connected to the main body stage 2a via a Z motor 61, a Y motor 62, and an X motor (not shown). The Z motor 61 is composed of, for example, a voice coil motor, and includes a stator 61A provided on the main body stage 2a and a mover 61B provided on the substrate holder 40 and driven in the Z direction with respect to the stator 61A. Have. A plurality of Z motors 61 (for example, three locations, only two locations shown in FIG. 3) are arranged, and the drive amount of the mover 61B is the same for each Z motor 61, whereby the substrate holder 40 (that is, the substrate P). The position in the Z direction (the position in the focus direction) can be adjusted, and the position of the substrate holder 40 (that is, the substrate P) in the θX direction and the position in the θY direction ( Leveling) can be adjusted.

  The Y motor 62 is composed of, for example, a voice coil motor, and a stator 62A provided via support portions 62C that are defeated on both sides in the Y direction with the substrate holder 40 sandwiched between the main body stage 2a and the substrate holder 40. Each has a movable element 62B provided on the Y side surface and driven in the Y direction with respect to the stator 62A. Moreover, the Y motor 62 is arrange | positioned at two places at intervals in the X direction, for example on the -Y side of the substrate holder 40. By making the drive amount and drive direction of the mover 62B the same for each Y motor 62, the position of the substrate holder 40 (ie, the substrate P) in the Y direction can be adjusted, and the mover disposed on the −Y side. By varying the drive amount of 62B, the position of the substrate holder 40 (ie, substrate P) in the θZ direction can be adjusted.

  The X motor is composed of, for example, a voice coil motor, a stator provided via support portions (not shown) that are defeated on both sides in the X direction with the substrate holder 40 sandwiched between the main body stage 2a, and the substrate holder 40. Each has a mover (not shown) that is provided on the X side surface and is driven in the Y direction with respect to the stator.

  By driving the Z motor 61, the Y motor 62, and the X motor, the substrate holder 40 (substrate P) that is a fine movement stage is in the Z direction, the Y direction, the X direction, and θZ with respect to the main body stage 2a that is a coarse movement stage. Positioning is performed with six degrees of freedom in the direction, θY direction, and θX direction.

Further, the substrate stage device 2 is provided with a temperature adjusting device CC that adjusts the temperature of the substrate P by adjusting the pressure of the gas.
The temperature adjustment device CC includes a gas flow path 80 formed in the substrate holder 40, a gas supply device 81 that supplies a gas whose preliminary temperature has been adjusted, and a pressure adjustment that adjusts the pressure of the gas supplied from the gas supply device 81. A device 82, an introduction pipe 83 that guides the pressure-adjusted gas to the gas flow path 80, a suction device 84 that sucks the gas in the gas flow path 80 under a negative pressure, and a gas between the gas flow path 80 and the suction device 84. A pressure adjusting device 85 for adjusting the pressure of the gas, an introduction pipe 86 for guiding the gas in the gas flow path 80 to the pressure adjusting device 85, and a temperature measuring device 87 embedded in the vicinity of the adsorption portion of the substrate P of the substrate holder 40. is doing.

  Examples of the gas used for temperature adjustment include optically inert gas (for example, nitrogen gas) so that adverse effects can be suppressed even if the gas leaks into the third space 5 in a vacuum.

  The gas flow path 80 includes a main flow path 80A formed so as to penetrate the substrate holder 40, a plurality of openings 80B that open to the holding surface 40a that holds the substrate P of the substrate holder 40, the main flow path 80a, and the openings. The communication path 80C communicates with 80B.

  The temperature measuring device 87 measures the temperature of the substrate holder 40 and outputs it to the control device 4. The control device 4 controls the operation of the pressure adjusting device 82 and the pressure adjusting device 85 according to the measurement result of the temperature measuring device 87.

Next, an example of the operation of the exposure apparatus EX having the above-described configuration will be described.
The third space 5 is adjusted to a vacuum state (first pressure value) by the first adjusting device 8.
Further, the pressure in the fourth space 15 is approximately the same as the pressure in the third space 5 by the second adjustment device 17 or higher than the pressure in the third space 5 and lower than the atmospheric pressure (second pressure value). Adjusted to Alternatively, the fourth space 15 may be set to a pressure lower than that of the third space 5. The gap G1 between the first surface 11 and the second surface 12 is adjusted to a predetermined amount by the gap adjusting mechanism 35, and by the gas seal mechanism 10 formed between the first surface 11 and the second surface 12, Inflow of gas into the third space 5 is suppressed. Thereby, the vacuum state and environment of the third space 5 are maintained.

  After the mask M is held by the mask stage apparatus 1 and the substrate P is held by the substrate stage apparatus 2, the control device 4 starts an exposure process for the substrate P. In order to illuminate the mask M with illumination light, the control device 4 starts the light emission operation of the light source device 3.

  The EUV light emitted from the light source device 3 by the light emission operation of the light source device 3 enters the illumination optical system IL. The EUV light incident on the illumination optical system IL travels through the illumination optical system IL and is then supplied to the first opening 9. The EUV light supplied to the first opening 9 enters the mask M held by the mask stage apparatus 1 through the first opening 9 as illumination light. That is, the mask M held by the mask stage apparatus 1 is emitted from the light source device 3 and illuminated with illumination light (EUV light) via the illumination optical system IL. Illumination light that is irradiated onto the reflective surface of the mask M and reflected by the reflective surface enters the projection optical system PL that is disposed in the third space 5 as exposure light EL that includes information on the pattern image of the mask M. The exposure light EL that has entered the projection optical system PL travels through the projection optical system PL, and is then irradiated onto the substrate P held by the substrate stage apparatus 2.

  In synchronization with the movement of the mask M in the Y-axis direction, the control device 4 illuminates the mask M with the exposure light EL while scanning and moving the substrate P in the Y-axis direction by driving the second drive systems 73A and 73B. . Thereby, the substrate P is exposed with the exposure light EL, and an image of the pattern of the mask M is projected onto the substrate P. Then, the control device 4 performs step movement of the substrate P in the X-axis direction by driving the first drive system 90 and scanning movement of the substrate P in the Y-axis direction by driving the second drive systems 73A and 73B. By repeating, the pattern of the mask M is exposed to the substrate P.

  When the main body stage 2a and the substrate holder 40 are moved, the substrate holder 40 and the substrate P are heated by the first drive system 90 and illumination light irradiation. At this time, the substantially surface position temperature of the substrate holder 40 is measured by the temperature measuring device 87 and output to the control device 4. The controller 4 adjusts the pressure of the gas supplied to the gas flow path 80 so as to correct the difference between the measured temperature of the substrate holder 40 and the design temperature (predetermined temperature, for example, 23 ° C.). Adjust through. Specifically, when the temperature measured by the temperature measuring device 87 is higher than the design value, the gas is decompressed and a temperature drop corresponding to the amount of pressure reduction is generated in the gas by adiabatic expansion, and the measured temperature is lower than the design value. In some cases, the gas is pressurized and a temperature rise corresponding to the amount of pressurization is generated in the gas by adiabatic compression. As described above, the gas whose pressure has been adjusted undergoes a temperature change according to the pressure fluctuation, and the gas in which this temperature change has occurred is supplied to the gas flow path 80, whereby the temperature of the substrate holder 40 (that is, The temperature of the substrate P) is corrected to the design temperature.

  At this time, the pressure (positive pressure or negative pressure) applied to the gas is minute (for example, several kPa of 0.1 atm or less) because the temperature of the gas supplied from the gas supply device 81 is preliminarily adjusted. It becomes smaller than the holding force of the substrate P by the electrostatic chuck device. Therefore, the pressure applied from the gas to the substrate P through the opening 80B is smaller than the substrate holding force by the electrostatic chuck device, and does not adversely affect the holding of the substrate P on the substrate holder 40.

  The gas in the gas flow path 80 is sucked by negative pressure by the suction device 84, but the negative pressure is set so as not to affect the pressure control of the gas in the gas flow path 80 by the pressure adjusting device 82. Negative pressure is adjusted.

  As described above, in this embodiment, since the temperature of the substrate holder 40 and the substrate P is adjusted by the supplied gas medium, the substrate is interposed via the introduction pipe 83 (introduction pipe 86) as in the case of using a liquid medium. It is possible to suppress the occurrence of disturbance such as vibration and force transmitted to the holder 40. Therefore, in this embodiment, it becomes possible to improve the positioning accuracy of the substrate P, and a high-precision exposure process can be realized.

  Moreover, in this embodiment, since the temperature of the gas medium used for temperature adjustment is adjusted by pressure control, it is possible to adjust the temperature more quickly than in the case of directly heating and cooling the gas, and the temperature controllability can be improved. . In addition, in this embodiment, since the pressure of the gas is adjusted by the pressure adjusting device 85 in the gas discharge system of the gas flow path 80, the gas pressure in the gas flow path 80 is maintained at a constant control value with high accuracy. It is possible to control the temperature of the substrate P with high accuracy.

Furthermore, in this embodiment, since the gas flow path 80 is opened to the holding surface 40a of the substrate P, the temperature can be adjusted by bringing the gas medium into direct contact with the substrate P, and the responsiveness is high. Accurate temperature control is possible.
In addition, in this embodiment, since the pressure adjusting devices 82 and 85 constituting the temperature adjusting device CC are provided in the main body stage 2a that is a coarse movement stage, vibrations and the like are transmitted to the substrate holder 40 that is a fine movement stage. Can be suppressed.

(Second Embodiment)
Next, the second embodiment will be described.
FIG. 4 is a diagram showing a second embodiment of the stage apparatus of the present invention.
In this figure, the same reference numerals are given to the same elements as those of the first embodiment shown in FIG. 3, and the description thereof is omitted.
The difference between the second embodiment and the first embodiment described above is the structure for holding the substrate P on the substrate holder 40.

  Specifically, in the first embodiment, since the substrate stage device 2 in the EUV exposure apparatus EX is disposed in a vacuum environment, the substrate P is held on the substrate holder 40 by using an electrostatic force. In the case of the exposure apparatus EX used under atmospheric pressure, a configuration in which the substrate P is held on the substrate holder 40 by negative pressure suction can be adopted.

That is, as shown in FIG. 4, the substrate holder 40 is connected to the main flow path 80A in the gas flow path 80 described above, the communication path 80D is connected, and the communication path 80D is connected to the exhaust path 80E. Yes. An introduction pipe 86 is connected to the exhaust path 80E.
Other configurations are the same as those of the first embodiment.

In the present embodiment, when the substrate P is adsorbed and held by the substrate holder 40, the suction pressure greater than the supply pressure is supplied by the suction device 84 while supplying the temperature-adjusted gas to the gas flow path 80 by the gas supply device 81. Then, the gas in the gas flow path 80 is sucked under negative pressure. Thereby, the gas in the gas flow path 80 becomes a negative pressure, and the substrate P can be held on the substrate holder by the differential pressure from the atmospheric pressure. At this time, the gas supplied to the gas flow path 80 is pressure-controlled by the pressure adjusting device 82 according to the measurement result of the temperature measuring device 87 as described above, thereby correcting the difference from the design temperature. Can do.
Note that the gas pressure control related to the temperature correction is performed with a minute amount that does not adversely affect the holding pressure of the substrate P on the substrate holder 40, so that the stable holding of the substrate P on the substrate holder 40 can be maintained. . Moreover, dry air etc. are used as gas in the case of applying temperature control apparatus CC under atmospheric pressure like this embodiment.

  As described above, this embodiment can be applied to an exposure apparatus that performs exposure processing under atmospheric pressure, in addition to obtaining the same operations and effects as those of the first embodiment. Further, in the present embodiment, the present invention can be easily applied to an existing stage apparatus that sucks and holds the substrate P by negative pressure suction, and versatility can be improved.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, in the above embodiment, the temperature adjustment device CC is provided with the pressure adjustment device 82, but the present invention is not limited to this, and the temperature-adjusted gas is supplied to the gas flow path 80 without performing pressure control. The structure which supplies may be sufficient. Also in this case, the temperature of the substrate P can be adjusted via the substrate holder 40 without causing disturbance such as vibration and force.
In the above embodiment, the gas flow channel 80 is provided with the opening 80B that opens to the substrate holding surface 40a. However, the present invention is not limited to this, and only the main flow channel 80A passes through the substrate holder 40. It is good also as a structure which provides.
With this configuration, the present invention can be applied in both a vacuum environment and an atmospheric pressure environment, and gas can be reliably prevented from leaking to the substrate holding surface 40a.

  The substrate (object) in each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask or reticle used in an exposure apparatus. The original plate (synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the substrate P.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, two mask patterns are synthesized on a substrate through a projection optical system, and one scanning exposure is performed on one substrate. The present invention can also be applied to an exposure apparatus that performs double exposure of shot areas almost simultaneously.

  The type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto a substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). In addition, the present invention can be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask, or the like.

  In this embodiment, the case where the exposure light EL is EUV light has been described as an example. However, as the exposure light EL, for example, bright lines (g-line, h-line, i-line) emitted from a mercury lamp and KrF. It is also possible to use far ultraviolet light (DUV light) such as excimer laser light (wavelength 248 nm), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F2 laser light (wavelength 157 nm), or the like. In that case, the third space 5 is not necessarily adjusted to a vacuum state, and for example, the third space 5 can be filled with the first gas. When the third space 5 is filled with the first gas, the gas seal mechanism 10 of this embodiment can be used to maintain the environment of the third space 5 filled with the first gas. Further, the fourth space 15 formed by the second member 16 can be filled with the second gas.

  The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of substrate stages (wafer stages). The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to the wafer stage disclosed in Japanese Patent Application No. 2004-168482 filed earlier by the present applicant.

  An exposure apparatus to which the present invention is applied assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  Next, an embodiment of a manufacturing method of a micro device using the exposure apparatus and the exposure method according to the embodiment of the present invention in the lithography process will be described. FIG. 5 is a flowchart showing a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micro machine, etc.).

  First, in step S10 (design step), function / performance design (for example, circuit design of a semiconductor device) of a micro device is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S13 (wafer processing step), using the mask and wafer prepared in steps S10 to S12, an actual circuit or the like is formed on the wafer by lithography or the like, as will be described later. Next, in step S14 (device assembly step), device assembly is performed using the wafer processed in step S13. This step S14 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S14 are performed. After these steps, the microdevice is completed and shipped.

FIG. 6 is a diagram illustrating an example of a detailed process of step S13 in the case of a semiconductor device.
In step S21 (oxidation step), the surface of the wafer is oxidized. In step S22 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S24 (ion implantation step), ions are implanted into the wafer. Each of the above steps S21 to S24 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  In each stage of the wafer process, when the above-described pretreatment process is completed, the posttreatment process is executed as follows. In this post-processing process, first, in step S25 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in step S27 (development step), the exposed wafer is developed, and in step S28 (etching step), exposed members other than the portion where the resist remains are removed by etching. In step S29 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.

  Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., from mother reticles to glass substrates and The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a silicon wafer or the like. Here, in an exposure apparatus using DUV (deep ultraviolet), VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. In proximity-type X-ray exposure apparatuses, electron beam exposure apparatuses, and the like, a transmissive mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate. Such an exposure apparatus is disclosed in WO99 / 34255, WO99 / 50712, WO99 / 66370, JP-A-11-194479, JP-A2000-12453, JP-A-2000-29202, and the like. .

  CC ... Temperature adjustment device, EX ... Exposure device, P ... Substrate (object), ST ... Stage device, 2a ... Main body stage (moving body, first moving body), 40 ... Substrate holder (second moving body), 40a ... holding surface, 80B ... opening, 81 ... gas supply device, 82 ... pressure adjusting device, 84 ... suction device

Claims (11)

A stage apparatus having a moving body that moves while holding an object,
A suction device that sucks and holds the object on the moving body by negative pressure suction;
A stage device comprising: a temperature adjustment device capable of supplying a temperature-adjusted gas to the movable body and adjusting the temperature of the object held by the suction device.   The stage apparatus according to claim 1, further comprising a pressure adjusting device that adjusts a temperature of the gas whose temperature is adjusted to adjust a temperature of the gas.   The stage apparatus according to claim 2, wherein the pressure adjusting device is provided on both the inflow side and the outflow side of the gas with respect to the moving body.   The stage apparatus according to any one of claims 1 to 3, further comprising an opening that communicates with the temperature-adjusted gas flow path in the moving body and opens in a holding surface of the object in the moving body.   The stage device according to claim 4, wherein the flow path is connected to a negative pressure suction source of the suction device. A stage apparatus having a moving body that moves while holding an object,
A gas supply device for supplying temperature-adjusted gas to the moving body;
And a pressure adjusting device for adjusting a temperature of the gas by adjusting a pressure of the supplied gas.   The stage apparatus according to claim 6, wherein the pressure adjusting device is provided on both the inflow side and the outflow side of the gas with respect to the moving body.   The stage apparatus according to claim 6 or 7, further comprising an opening that communicates with the temperature-adjusted gas flow path in the movable body and opens in a holding surface of the object in the movable body.   The stage device according to any one of claims 6 to 8, further comprising an electrostatic chuck device that holds the object on the movable body by static electricity. A first moving body that moves with a predetermined movement stroke;
A second moving body mounted on the first moving body so as to be finely movable with a stroke smaller than the moving stroke;
The stage apparatus according to claim 1, wherein the object is held by the second moving body, and the temperature adjusting device is provided on the first moving body.   An exposure apparatus comprising the stage apparatus according to claim 1.

Images