JP2010087323A - Development processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a development processor reducing the number of components, and having a high level of design margin in a limited space. <P>SOLUTION: Three development processing units DEV are arranged side by side in a line at the same height in a common housing 50 with atmospheres thereof made to communicate with one another. A slit nozzle 610 and a porous nozzle 620 for supplying a developer are arranged for the three development processing units DEV in common. Among the development processing units DEV adjacent to one another, standby pods 70 each receiving the slit nozzle 610 and the porous nozzle 620 in a standby state are arranged. The standby pod 70 functions as a partition wall between the development processing units DEV adjacent to each other as well. Thereby, the need of newly arranging a separate partition plate is obviated, the number of components of the development processor can be reduced, and a high level of design margin can be provided in a limited space of the housing 50. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a development processing apparatus for supplying a developing solution to a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, an optical disk substrate or the like (hereinafter simply referred to as “substrate”) to perform development processing.

  As is well known, products such as semiconductors and liquid crystal displays are manufactured by performing a series of processes such as cleaning, resist coating, exposure, development, etching, interlayer insulation film formation, heat treatment, and dicing on the substrate. Has been. Among these various processes, for example, a plurality of processing units for performing resist coating processing, development processing, and heat treatment associated therewith are incorporated, and the substrate is circulated and transferred between the processing units by a transfer robot. A substrate processing apparatus that performs photolithography processing is widely used as a so-called coater and developer (see, for example, Patent Document 1).

  Conventionally, in a substrate processing apparatus as disclosed in Patent Document 1, a plurality of processing units have been individually incorporated. That is, each of the plurality of processing units is provided in a separate casing. For example, the substrate processing apparatus disclosed in Patent Document 1 is provided with five development processing units. Each development processing unit is attached to a spin chuck or a substrate that rotates by sucking and holding the substrate in one housing. One nozzle for supplying the developer is provided one by one. Therefore, the plurality of development processing units have their atmospheres separated from each other.

JP 2003-324139 A

  However, when a plurality of development processing units are individually incorporated independently, the number of parts such as nozzles increases in proportion to the number of units, and the cost increases accordingly. In addition, since a large number of parts necessary for development processing are provided in a limited space of one housing, restrictions on the design specifications of the development processing unit have become large. Furthermore, since the atmospheres of the plurality of development processing units are necessarily separated, there is a possibility that minute machine differences may occur in the process atmosphere.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a development processing apparatus that reduces the number of parts and has a high design margin in a restricted space.

  In order to solve the above-mentioned problems, the invention of claim 1 is a development processing apparatus for performing development processing by supplying a developing solution to a substrate, and having the same height in a common casing in a state where the atmosphere is communicated with each other. A plurality of development processing units arranged in a line at a position, and a plurality of the development processing units move along an arrangement direction of the plurality of development processing units, and a developer is discharged to a substrate accommodated in each of the plurality of development processing units. And a standby pod that is provided between adjacent development processing units in the arrangement of the plurality of development processing units and that receives the standby development nozzles. Each includes a rotation holding means for holding and rotating the substrate, a cup surrounding the periphery of the substrate held by the rotation holding means, and the cup to the rotation holding means. Elevating means for moving up and down between a loading / unloading position when entering and exiting and a processing position when performing development processing on the substrate held by the rotation holding means, and the height position of the upper end of the standby pod is The cup is higher than the upper end of the cup at the processing position, and the lower end of the standby pod is lower than the upper end of the cup at the processing position.

  According to a second aspect of the present invention, in the development processing apparatus according to the first aspect of the present invention, the standby pod is provided with a cleaning mechanism for cleaning the developer nozzle.

  According to a third aspect of the present invention, in the development processing apparatus according to the first or second aspect of the present invention, the substrate to be developed by the plurality of development processing units has a circular shape, and the standby pod is long. And the length of the standby pod in the longitudinal direction is longer than the diameter of the substrate.

  According to the present invention, a plurality of development processing units are arranged in a line at the same height in a state where atmospheres are communicated with each other in a common casing, and along the arrangement direction of the plurality of development processing units. A developer nozzle that moves and discharges the developer is provided, and a standby pod that receives the developer nozzle in a standby state is provided between adjacent development processing units in the arrangement of the plurality of development processing units. Is higher than the upper end of the cup of the development processing unit at the processing position, and the lower end of the standby pod is lower than the upper end of the cup at the processing position. Therefore, the standby pod is a partition that partitions adjacent development processing units. It also functions as a wall, eliminating the need for a separate partition plate. As a result, the number of parts can be reduced, and the space for installing the partition plate can be reduced to provide a high design margin in the restricted space of the housing.

  In particular, according to the second aspect of the present invention, since the standby pod is provided with the cleaning mechanism for cleaning the developer nozzle, the standby developer nozzle can be cleaned.

  In particular, according to the invention of claim 3, since the length of the standby pod in the longitudinal direction is longer than the diameter of the substrate, the standby pod can more effectively partition between the adjacent development processing units.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. Overall configuration>
First, the overall configuration of a substrate processing apparatus incorporating the development processing apparatus according to the present invention will be described. FIG. 1 is a plan view of a substrate processing apparatus 1 incorporating a development processing apparatus according to the present invention. 2 is a schematic side view showing the arrangement configuration of the liquid processing unit of the substrate processing apparatus 1, FIG. 3 is a schematic side view showing the arrangement configuration of the heat treatment unit, and FIG. 4 is a transfer robot and a substrate mounting portion. It is a side view which shows the arrangement configuration. In addition, in FIG. 1 and subsequent figures, in order to clarify the directional relationship, an XYZ orthogonal coordinate system in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane is appropriately attached.

  The substrate processing apparatus 1 of the present embodiment is an apparatus (so-called coater and developer) that applies a photoresist film to a disk-shaped semiconductor wafer as a substrate W and performs development processing on the semiconductor wafer after pattern exposure. The substrate W to be processed by the substrate processing apparatus 1 equipped with the development processing apparatus according to the present invention is not limited to a semiconductor wafer, but may be a glass substrate for a liquid crystal display device, a glass substrate for a photomask, or the like. Also good.

  The substrate processing apparatus 1 of the present embodiment is configured by connecting four processing blocks of an indexer block ID, a coating processing block SC, a development processing block SD, and an interface block IF in one direction (X-axis direction). An exposure apparatus (stepper) EXP, which is an external apparatus separate from the substrate processing apparatus 1, is connected to the interface block IF so as to be adjacent thereto.

  The indexer block ID is a processing block for carrying the unprocessed substrate W received from outside the apparatus into the coating process block SC and carrying out the processed substrate W after the development process to the outside of the apparatus. The indexer block ID includes a placement table 11 on which a plurality of carriers C (four in this embodiment) are placed side by side, and an unprocessed substrate W is taken out from each carrier C, and a processed substrate W is placed on each carrier C. And an indexer robot IDR for storage.

  A coating processing block SC is arranged adjacent to the indexer block ID. The coating processing block SC is a processing block for forming a resist film on the substrate W and an antireflection film on the base. The coating process block SC is roughly divided into upper and lower two stages of an upper coating cell UC and a lower coating cell LC. The upper coating cell UC includes a main transfer robot TR1 and a plurality of processing units that are in charge of transfer by the main transfer robot TR1. Similarly, the lower coating cell LC includes a main transfer robot TR2 and a plurality of processing units that are in charge of transfer by the main transfer robot TR2.

  A development processing block SD is arranged so as to be sandwiched between the coating processing block SC and the interface block IF. The development processing block SD is a processing block for performing development processing on the substrate W after the exposure processing. The development processing block SD is roughly divided into upper and lower two stages of an upper development cell UD and a lower development cell LD. The upper development cell UD includes a main transfer robot TR3 and a plurality of processing units that are in charge of transfer by the main transfer robot TR3. Similarly, the lower development cell LD is configured to include a main transfer robot TR4 and a plurality of processing units that are in charge of transfer by the main transfer robot TR4.

  The upper coating cell UC and the upper development cell UD arranged along the X-axis direction are connected to form one substrate processing path that connects the indexer block ID and the interface block IF. Similarly, the lower coating cells LC and the lower development cells LD arranged along the X-axis direction are connected to form one substrate processing path that connects the indexer block ID and the interface block IF. That is, the substrate processing apparatus 1 has two upper and lower substrate processing paths across the coating processing block SC and the development processing block SD.

  An interface block IF is disposed adjacent to the development processing block SD. The interface block IF is a processing block that transfers the unexposed substrate W to the exposure apparatus EXP that is an external apparatus separate from the substrate processing apparatus 1 and receives the exposed substrate W from the exposure apparatus EXP. The interface block IF includes a first interface robot IFR1 and a second interface robot IFR2 that transport the substrate W.

  Substrate placement portions PASS1U, PASS2U, PASS1L, and PASS2L are provided at the connection portion between the indexer block ID and the coating processing block SC. The substrate platforms PASS1U and PASS2U are provided in a vertically stacked manner at the connection portion between the indexer block ID and the upper coating cell UC. The transfer of the substrate W between the indexer robot IDR and the main transfer robot TR1 is performed via the substrate platforms PASS1U and PASS2U. On the other hand, the substrate platforms PASS1L and PASS2L are provided in a vertically stacked manner at the connection portion between the indexer block ID and the lower coating cell LC. Transfer of the substrate W between the indexer robot IDR and the main transport robot TR2 is performed via the substrate platforms PASS1L and PASS2L.

  In addition, substrate mounting portions PASS3U, PASS4U, PASS3L, and PASS4L are provided at a connection portion between the coating processing block SC and the development processing block SD. The substrate platforms PASS3U and PASS4U are provided in a vertically stacked manner at the connection portion between the upper coating cell UC and the upper development cell UD. The transfer of the substrate W between the main transfer robot TR1 and the main transfer robot TR3 is performed through the substrate platforms PASS3U and PASS4U. On the other hand, the substrate platforms PASS3L and PASS4L are provided in a vertically stacked manner at a connection portion between the lower coating cell LC and the lower developing cell LD. The transfer of the substrate W between the main transfer robot TR2 and the main transfer robot TR4 is performed via the substrate platforms PASS3L and PASS4L.

  The development processing block SD is provided with substrate platforms PASS5U, PASS6U, PASS5L, and PASS6L. The substrate platforms PASS5U and PASS6U are provided on the upper development cell UD so as to be stacked one above the other. The transfer of the substrate W between the main transfer robot TR3 and the first interface robot IFR1 is performed via the substrate platforms PASS5U and PASS6U. The substrate platforms PASS5L and PASS6L are provided in a vertically stacked manner on the lower development cell LD. The transfer of the substrate W between the main transfer robot TR4 and the first interface robot IFR1 is performed via the substrate platforms PASS5L and PASS6L.

  Furthermore, the substrate block portions PASS7 and PASS8 are provided on the interface block IF so as to be stacked one above the other. The transfer of the substrate W between the first interface robot IFR1 and the second interface robot IFR2 is performed via the substrate platforms PASS7 and PASS8. Each of the above substrate placement units is configured to include three support pins, and the transfer of the substrate W is performed when the other robot receives the substrate W placed on the support pin by one robot. . Each substrate placement unit is provided with an optical sensor that detects the presence or absence of the substrate W.

<1-1. Indexer Block>
Subsequently, each processing block will be described in order from the indexer block ID. A carrier C storing a plurality of unprocessed substrates W is loaded into the placement table 11 having the indexer block ID by an unmanned transport mechanism such as an AGV (automated guided vehicle). Further, the carrier C storing the processed plurality of substrates W is also carried out by AGV or the like. In addition to the FOUP (front opening unified pod) that stores the substrate W in a sealed space, the carrier C may be an OC (open cassette) that exposes the standard mechanical interface (SMIF) pod or the storage substrate W to the outside air. There may be.

  The indexer robot IDR includes a movable table 12 that moves horizontally along the arrangement direction (Y-axis direction) of the carrier C on the side of the mounting table 11 and a lift that expands and contracts in the vertical direction (Z-axis direction) with respect to the movable table 12. A shaft 13 and a holding arm 14 that holds the substrate W in a horizontal posture are provided. The holding arm 14 is mounted on the upper end of the elevating shaft 13 and is configured to be capable of turning around the axis along the vertical direction and sliding along the turning radius. Therefore, the holding arm 14 performs horizontal movement along the Y-axis direction, vertical movement, turning movement in the horizontal plane, and advance / retreat movement along the turning radius direction. As a result, the indexer robot IDR can cause the holding arm 14 to access each carrier C to take out the unprocessed substrate W and store the processed substrate W.

<1-2. Application processing block>
In the upper coating cell UC of the coating processing block SC, a heat treatment unit group and a liquid processing unit group are arranged facing each other across a transport space TP1 for the main transport robot TR1 to move. Specifically, the liquid processing unit group is located on the front side of the apparatus ((−Y) side), and the heat treatment unit group is located on the back side of the apparatus ((+ Y) side).

  As shown in FIG. 2, the upper coating cell UC includes a plurality of liquid processing unit groups in the upper stage (three in the present embodiment) and a plurality of antireflection film coating processing units BARC arranged adjacent to each other in the lower stage ( 3 in this embodiment) and a resist film coating processing unit RES arranged adjacent to each other. Each of the three antireflection film coating processing units BARC is mounted on a spin chuck that holds the substrate W in a substantially horizontal posture and rotates the substrate W in a substantially horizontal plane, a spin motor that rotates the spin chuck, and the spin chuck. A cup or the like surrounding the periphery of the held substrate W is provided. The three antireflection coating application units BARC are arranged in parallel without being partitioned by a partition wall or the like. A common anti-reflection film coating solution supply unit 21 is provided in the three anti-reflection film coating processing units BARC (FIG. 1). The antireflection film coating liquid supply unit 21 moves the discharge nozzle 22 along the arrangement of the three antireflection film coating processing units BARC, and moves it forward and backward toward the antireflection film coating processing unit BARC. The discharge nozzle 22 discharges the coating liquid for the antireflection film. A plurality of discharge nozzles 22 are provided for each type of coating liquid for the antireflection film, and the coating liquid supply unit 21 for the antireflection film grips and moves one of them.

  The three resist film coating processing units RES provided in the lower stage of the upper coating cell UC also have substantially the same configuration as the antireflection film coating processing unit BARC. That is, each of the three resist film coating processing units RES includes a spin chuck, a spin motor, a cup, and the like. The three resist film coating processing units RES are juxtaposed without being partitioned by a partition wall or the like, and the resist film coating liquid supply section (shared with the three resist film coating processing units RES) (Not shown) is provided. The resist film coating solution supply unit moves the discharge nozzle along the sequence of the three resist film coating processing units RES and moves forward and backward toward the resist film coating processing unit RES. The discharge nozzle discharges the coating liquid for the resist film. In the same manner as described above, a plurality of discharge nozzles are provided for each type of resist film coating liquid, and the resist film coating liquid supply unit grips and moves one of them.

  As shown in FIG. 3, the heat treatment unit group of the upper coating cell UC has heat treatment units stacked and arranged in three rows facing the transfer space TP1. In each of the columns closest to the indexer block ID and the development processing block SD, four heating units PHP and one cooling unit CP are vertically stacked. In the middle row, two heating units PHP and one cooling unit CP are stacked one above the other.

  The heating unit PHP includes a hot plate 25, a temporary placement unit 27, and a local transfer arm 26. The substrate W carried into the temporary placement unit 27 is transported to the hot plate 25 by the local transport arm 26, and the substrate W is heated to a predetermined temperature and subjected to heat treatment. The substrate W that has been subjected to the heat treatment is roughly cooled by being received by the local transfer arm 26. A cooling mechanism may be provided in the temporary placement unit 27 to further enhance the cooling capability of the local transfer arm 26. Note that the illustration of the local transfer arm 26 is omitted in the middle row of FIG.

  The cooling unit CP cools the heated substrate W to accurately lower the temperature to a predetermined temperature and maintains the substrate W at the predetermined temperature. In one of the ten heating units PHP arranged in the heat treatment unit group of the upper coating cell UC, in a vapor atmosphere of HMDS (hexamethyldisilazane) in order to improve the adhesion between the substrate W and the coating film. The substrate W is heat-treated (adhesion strengthening treatment). Note that the heating unit PHP for adhesion strengthening treatment forms a sealed space between the surface of the hot plate and a hot plate surface so that the atmosphere of HMDS does not leak outside.

  As shown in FIG. 4, the transport space TP1 is provided with two vertical guide rails 31 for guiding the main transport robot TR1 in the vertical direction and horizontal guide rails 32 for guiding in the horizontal direction (X direction). . The two vertical guide rails 31 are fixedly installed on the liquid processing unit group side at both ends in the X-axis direction of the transport space TP1. The horizontal guide rail 32 is slidably mounted between the two vertical guide rails 31. A base portion 33 is slidably attached to the lateral guide rail 32. The base portion 33 is attached so as to project laterally to the approximate center of the transport space TP1. The horizontal guide rail 32 is guided by the vertical guide rail 31 and moved in the vertical direction by a drive unit (not shown), and the base portion 33 is guided by the horizontal guide rail 32 and moved in the X-axis direction.

  The base portion 33 is provided with a turntable 35 so as to be able to turn around an axis along the vertical direction. On the turntable 35, two holding arms 37a and 37b for holding the substrate W are mounted so as to be independently slidable in the horizontal direction. The two holding arms 37a and 37b are provided at positions close to each other in the vertical direction. The base unit 33 is provided with a drive unit for rotating the turntable 35, and the turntable 35 has a built-in drive unit for slidingly moving the holding arms 37a and 37b in the turning radius direction of the turntable 35 (both shown). (Omitted). Accordingly, each of the holding arms 37a and 37b performs an up-and-down movement, a slide movement along the X-axis direction, a turning operation in a horizontal plane, and a forward and backward movement along the turning radius direction. As a result, the main transfer robot TR1 has the two holding arms 37a and 37b individually disposed in the liquid treatment unit group and the heat treatment unit group of the upper coating cell UC, and the substrate platforms PASS1U, PASS2U, and PASS3U. , PASS4U can be accessed and the substrate W can be exchanged between them.

  The configuration of the lower coating cell LC is substantially the same as the configuration of the upper coating cell UC. That is, also in the lower coating cell LC, the heat treatment unit group and the liquid treatment unit group are arranged to face each other across the transport space TP2 for the main transport robot TR2 to move.

  As shown in FIG. 2, the liquid processing unit group of the lower coating cell LC includes a plurality (three in the present embodiment) of the antireflection film coating processing units BARC arranged in the upper stage and a plurality of liquid processing units in the lower stage. (Three in this embodiment) are provided with resist film coating processing units RES arranged adjacent to each other. The antireflection film coating unit BARC and the resist film coating unit RES are the same as those in the upper coating cell UC.

  As shown in FIG. 3, the heat treatment unit group of the lower coating cell LC has heat treatment units stacked and arranged in three rows facing the transfer space TP2. In each of the columns closest to the indexer block ID and the development processing block SD, four heating units PHP and one cooling unit CP are vertically stacked. In the middle row, two heating units PHP and one cooling unit CP are stacked one above the other. The heating unit PHP and the cooling unit CP are the same as those in the upper application cell UC. Similarly to the upper coating cell UC, in one of the ten heating units PHP, the substrate W is heat-treated in a HMDS vapor atmosphere in order to improve the adhesion between the substrate W and the coating film. The heating unit PHP forms a sealed space with the surface of the hot plate by a cover (not shown) so that the HMDS atmosphere does not leak outside.

  The configuration of the main transfer robot TR2 is the same as that of the main transfer robot TR1 in the upper application cell UC. Therefore, the main transfer robot TR2 has the two holding arms 37a and 37b individually disposed in the liquid processing unit group and the heat treatment unit group of the lower coating cell LC, and the substrate platforms PASS1L, PASS2L, and PASS3L. , PASS4L can be accessed, and the substrate W can be exchanged between them.

<1-3. Development processing block>
In the upper development cell UD of the development processing block SD, a heat treatment unit group and a liquid processing unit group are arranged to face each other with a transport space TP3 for moving the main transport robot TR3. Specifically, like the coating processing block SC, the liquid processing unit group is located on the front side ((−Y) side) of the apparatus, and the heat treatment unit group is located on the rear side ((+ Y) side) of the apparatus.

  As shown in FIG. 2, the liquid processing unit group of the upper development cell UD includes a plurality of (three in the present embodiment) development processing units DEV arranged in two upper and lower stages. Each of the plurality of development processing units DEV includes a spin chuck that sucks and holds the substrate W in a substantially horizontal posture and rotates the substrate W in a substantially horizontal plane, a spin motor that rotates the spin chuck, and the substrate W held on the spin chuck. It has a cup that surrounds it. The three development processing units DEV in the upper stage of the upper development cell UD are arranged in a line at the same height in a state where the atmosphere is communicated with each other. A common developer supply unit 60 is provided for the three development processing units DEV (FIG. 1). A development processing apparatus according to the present invention is constituted by the three development processing units DEV arranged in parallel in a row at the same height, the details of which will be described later.

  The three development processing units DEV in the lower stage of the upper development cell UD are also arranged in a line at the same height in a state where the atmospheres are in communication with each other, as in the upper stage. A common developer supply unit is provided for the three development processing units DEV. This developer supply unit is also the same as the upper stage.

  As shown in FIG. 3, the heat treatment unit group of the upper development cell UD has the processing units stacked in three rows facing the transport space TP3. In the row closest to the coating processing block SC, three heating units PHP and two cooling units CP are vertically stacked. Further, in the row close to the interface block IF, four heating units PHP are stacked and the substrate platforms PASS5U and PASS6U are disposed at the top. In the middle row, a single edge exposure unit EEW and one cooling unit CP are stacked. The heating unit PHP and the cooling unit CP are generally the same as those in the above-described coating processing block SC. The edge exposure unit EEW includes a spin chuck that sucks and holds the substrate W in a substantially horizontal posture and rotates the substrate W in a substantially horizontal plane, a light irradiator that irradiates light to the periphery of the substrate W held by the spin chuck, and the like. (Both are not shown). The edge exposure unit EEW is not a processing unit corresponding to the heat treatment unit, but is disposed in the heat treatment unit group of the development processing block SD for the convenience of the apparatus layout.

  The four heating units PHP arranged in a row near the interface block IF are heat treatment units that perform post-exposure heat treatment (Post Exposure Bake) on the substrate W immediately after exposure. These four heating units PHP are different in character from the heating units PHP arranged in a row close to the coating processing block SC in that the first interface robot IFR1 of the interface block IF bears transportation, but the layout is convenient. Above, they are arranged in the heat treatment unit group of the development processing block SD. The four heating units PHP and the substrate platforms PASS5U and PASS6U arranged in a row close to the interface block IF have openings on both the front side facing the transfer space TP3 and the side facing the interface block IF. The board | substrate W can be carried in / out from those both sides.

  The configuration of the main transfer robot TR3 of the upper development cell UD is the same as that of the main transfer robots TR1 and TR2 in the coating processing block SC. Therefore, the main transfer robot TR3 has the two holding arms 37a and 37b individually disposed in the liquid processing unit group and the heat treatment unit group of the upper development cell UD, and the substrate platforms PASS3U, PASS4U, PASS5U, The PASS 6U can be accessed, and the substrate W can be exchanged between them.

  The configuration of the lower development cell LD is substantially the same as the configuration of the upper development cell UD. That is, also in the lower development cell LD, the heat treatment unit group and the liquid processing unit group are arranged to face each other across the transport space TP4 for the main transport robot TR4 to move.

  As shown in FIG. 2, the liquid processing unit group of the lower development cell LD includes a plurality (three in the present embodiment) of development processing units DEV arranged in two upper and lower stages. The development processing unit DEV is the same as that in the upper development cell UD. Similarly to the upper development cell UD, in each of the upper and lower two stages, the three development processing units DEV are arranged in a line at the same height in a state where the atmosphere is in communication with each other. A common developer supply section is provided in the development processing unit DEV.

  As shown in FIG. 3, the heat treatment unit group of the lower development cell LD has the processing units stacked in three rows facing the transport space TP4. In the row closest to the coating processing block SC, three heating units PHP and two cooling units CP are vertically stacked. In addition, in the row close to the interface block IF, four heating units PHP are stacked and the substrate platforms PASS5L and PASS6L are disposed at the top. In the middle row, a single edge exposure unit EEW and one cooling unit CP are stacked. The heating unit PHP, the cooling unit CP, and the edge exposure unit EEW are the same as those in the upper development cell UD. Further, the edge exposure unit EEW and four heating units PHP for performing post-exposure heating processing (heating units PHP in a row close to the interface block IF) are arranged in the heat treatment unit group of the development processing block SD for convenience of layout. . Further, the four heating units PHP and the substrate platforms PASS5L and PASS6L arranged in a row close to the interface block IF have openings on both the front side facing the transfer space TP4 and the side facing the interface block IF. The substrate W can be carried in and out from both sides.

  The configuration of the main transfer robot TR4 of the lower development cell LD is the same as that of the main transfer robots TR1 and TR2 in the coating processing block SC. Therefore, the main transfer robot TR4 has the two holding arms 37a and 37b individually disposed in the liquid processing unit group and the heat treatment unit group of the lower development cell LD, and the substrate platforms PASS3L, PASS4L, and PASS5L. , The PASS 6L can be accessed, and the substrate W can be exchanged between them.

<1-4. Interface block>
FIG. 5 is a side view showing the configuration of the interface block IF. The first interface robot IFR1 and the second interface robot IFR2 of the interface block IF are provided side by side in a direction (Y axis direction) perpendicular to the direction (X axis direction) of the processing blocks. The first interface robot IFR1 is disposed at a position close to the heat treatment unit group of the development processing block SD. The second interface robot IFR2 is disposed at a position close to the substrate carry-in / out entrance of the exposure apparatus EXP. Between the first interface robot IFR1 and the second interface robot IFR2, two substrate platforms PASS7 and PASS8, a substrate return return buffer RBF, and a substrate feed send buffer SBF are stacked one above the other. .

  When the development processing block SD cannot perform the development processing of the exposed substrate W due to some trouble, the return buffer RBF performs the post-exposure heating processing by the heating unit PHP of the development processing block SD, and then the substrate. W is temporarily stored and stored. On the other hand, the send buffer SBF temporarily stores and stores the substrate W before the exposure processing when the exposure apparatus EXP cannot accept the unexposed substrate W. Each of the return buffer RBF and the send buffer SBF is configured by a storage shelf that can store a plurality of substrates W in multiple stages. The first interface robot IFR1 accesses the return buffer RBF, and the second interface robot IFR2 accesses the send buffer SBF.

  The first interface robot IFR1 includes a base 43 that is fixedly installed, a lifting shaft 45 that expands and contracts in the vertical direction (Z-axis direction) with respect to the base 43, and a holding arm 47 that holds the substrate W. Yes. The holding arm 47 is mounted on the upper end of the elevating shaft 45, and is configured to be capable of turning around the axis along the vertical direction and sliding along the turning radius. Therefore, the holding arm 47 can move up and down, turn in the horizontal plane, and move forward and backward along the turning radius direction. As a result, the first interface robot IFR1 performs a post-exposure heating process in which the holding arm 47 is disposed in the return buffer RBF, the substrate platforms PASS5U, PASS6U, PASS5L, PASS6L, PASS7, PASS8 and the development processing block SD. The PHP can be accessed, and the substrate W can be exchanged with them.

  The second interface robot IFR2 also includes a base 43, a lifting shaft 45, and a holding arm 47, and has the same configuration as the first interface robot IFR1. For this reason, the second interface robot IFR2 can cause the holding arm 47 to access the send buffer SBF and the substrate platforms PASS7 and PASS8 and transfer the substrate W between them. Further, the second interface robot IFR2 delivers the unexposed substrate W to the substrate carry-in / out port of the exposure apparatus EXP and receives the exposed substrate W from the substrate carry-in / out port.

  The exposure apparatus EXP receives the unexposed substrate W coated with resist by the substrate processing apparatus 1 from the interface block IF, and performs the pattern exposure process. The substrate W subjected to the exposure processing by the exposure apparatus EXP is returned to the interface block IF. The exposure apparatus EXP performs so-called “immersion exposure processing” in which exposure processing is performed in a state where a liquid having a large refractive index (for example, pure water having a refractive index n = 1.44) is filled between the projection optical system and the substrate W. ”May be used.

<1-5. Control system>
Next, the control system of the substrate processing apparatus 1 will be described. FIG. 6 is a block diagram showing an outline of a control system of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control system configured in a hierarchical structure, and includes an upper main controller MC and a plurality of lower cell controllers CC as shown in FIG. The hardware configuration of the main controller MC and each cell controller CC is the same as that of a general computer. That is, each controller stores a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, and control applications and data. A magnetic disk or the like is provided.

  One upper main controller MC is provided for the entire substrate processing apparatus 1, and is mainly responsible for management of the entire apparatus, management of the main panel MP, and management of the cell controller CC. The main panel MP functions as a display for the main controller MC. Various commands can be input to the main controller MC from the keyboard KB. The main panel MP may be configured by a touch panel, and input work may be performed from the main panel MP to the main controller MC.

  The cell controller CC is composed of one transfer robot (including the main transfer robots TR1 to TR4, the indexer robot IDR, the first interface robot IFR1 and the second interface robot IFR2) and a processing unit that is in charge of transfer by the transfer robot. It is a control unit that manages the cells. The cell controller CC controls the transfer operation of the transfer robot via the lower transfer controller TC, and controls the operation of each processing unit in the cell via the unit controller PC.

  A host computer 100 connected to the substrate processing apparatus 1 via a LAN line is located as a higher-level control mechanism of the main controller MC. The host computer 100 is a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, and a magnetic that stores control applications and data. It has a disk and the like, and has the same configuration as a general computer. The host computer 100 is normally connected with a plurality of substrate processing apparatuses 1 of the present embodiment. The host computer 100 passes a recipe describing the processing procedure and processing conditions to each connected substrate processing apparatus 1. The recipe delivered from the host computer 100 is stored in a storage unit (for example, a memory) of the main controller MC of each substrate processing apparatus 1.

  The exposure apparatus EXP is provided with a separate control unit that is independent from the control mechanism of the substrate processing apparatus 1 described above. That is, the exposure apparatus EXP does not operate under the control of the main controller MC of the substrate processing apparatus 1 but performs independent operation control by itself. However, such an exposure apparatus EXP also performs operation control according to the recipe received from the host computer 100, and the substrate processing apparatus 1 performs a process synchronized with the exposure process in the exposure apparatus EXP.

<1-6. Substrate placement section>
The substrate processing apparatus 1 of the present embodiment is provided with a plurality of substrate platforms, which are provided with two substrate platforms as a pair (for example, the substrate platform PASS1U and the substrate platform). Part PASS2U, substrate platform PASS7 and substrate platform PASS8). This includes a sending substrate mounting portion for sending the substrate W before exposure from the indexer block ID to the interface block IF, and returning the substrate W after exposure from the interface block IF to the indexer block ID. This is because the return substrate mounting portion is separated. That is, the substrate platforms PASS1U, PASS1L, PASS3U, PASS3L, PASS5U, PASS5L, and PASS7 correspond to the sending substrate platform, and the substrate W before exposure is transferred via these. On the other hand, the substrate placement units PASS2U, PASS2L, PASS4U, PASS4L, PASS6U, PASS6L, and PASS8 correspond to the substrate placement unit, and the exposed substrate W is transferred via these.

  In addition, when each cell controller CC in FIG. 6 performs transport control in the cell, each substrate platform is placed on an entrance substrate platform on which the substrate W is carried into the cell or on an exit substrate placed on the cell. It becomes a placement part. The entrance substrate placement unit and the exit substrate placement unit are not absolutely defined for a certain substrate placement unit, but are relatively determined. For example, the substrate platform PASS3U on which the substrate W before exposure is placed is an exit substrate platform of the upper coating cell UC and an entrance substrate platform of the upper development cell UD.

<2. Configuration of development processing apparatus>
Next, the configuration of the development processing apparatus according to the present invention will be described. The development processing apparatus according to the present invention includes three development processing units DEV arranged in a line. Therefore, each of the upper development cell UD and the lower development cell LD of the development processing block SD is provided with two stages of development processing apparatuses according to the present invention.

  FIG. 7 is a plan view of the development processing apparatus according to the present invention, and FIG. 8 is a side view thereof. Within the common housing 50, the three development processing units DEV are arranged side by side along the X-axis direction at the same height in a state where the atmospheres are in communication with each other. FIG. 9 is an enlarged side view of two adjacent development processing units DEV among the three development processing units DEV.

  The three development processing units DEV have the same configuration. Each development processing unit DEV includes a rotation holding unit 110, a processing cup 120, a rinse nozzle 130, and a cup lifting mechanism 125. The rotation holding unit 110 includes a spin chuck 111, a rotation shaft 113, and a motor 114. The spin chuck 111 vacuum-sucks the vicinity of the center of the lower surface of the substrate W. The rotation shaft 113 is suspended from the central portion on the lower surface side of the spin chuck 111. The rotating shaft 113 is connected to the motor shaft of the motor 114. While the spin chuck 111 sucks and holds the substrate W in a substantially horizontal posture, the motor 114 rotates the rotating shaft 113, whereby the substrate W rotates around the axis along the vertical direction.

  A processing cup 120 is provided so as to surround the rotation holding unit 110. The processing cup 120 is moved up and down along the vertical direction between the loading / unloading position and the processing position by the cup lifting mechanism 125. The carry-in / out position is a height position of the processing cup 120 when the substrate W is carried in / out with respect to the rotation holding unit 110, and is a position indicated by a two-dot chain line in FIG. When the processing cup 120 is in the loading / unloading position, the upper end of the processing cup 120 is positioned below the upper surface of the spin chuck 111. On the other hand, the processing position is a height position of the processing cup 120 when performing development processing on the substrate W held by the rotation holding unit 110, and is a position indicated by a solid line in FIG. When the processing cup 120 is in the processing position, the processing cup 120 surrounds the periphery of the substrate W held by the rotation holding unit 110. Then, the droplets scattered from the rotating substrate W are collected by the processing cup 120 and discharged to a drain (not shown). An air cylinder or the like can be used as the cup lifting mechanism 125.

  The rinse nozzle 130 is provided so as to be pivotable about an axis along the vertical direction. The rinse nozzle 130 is pivotally driven between a retracted position outside the processing cup 120 and a rinse position immediately above the substrate W held by the rotation holding unit 110. The rinse nozzle 130 at the rinse position supplies the rinse liquid (pure water in the present embodiment) fed from a rinse liquid supply unit (not shown) to the upper surface of the substrate W held by the rotation holding unit 110.

  Further, a developer supply unit 60 is provided in the housing 50 that accommodates the three development processing units DEV. The developer supply unit 60 includes two types of developer nozzles, that is, a slit nozzle 610 and a porous nozzle 620. The slit nozzle 610 is a long developer nozzle that includes a slit-like discharge port having a length that is at least the diameter of the substrate W. The slit nozzle 610 is moved up and down along the vertical direction by the nozzle lifting mechanism 611 and is slid along the horizontal direction (X-axis direction) by the nozzle slide mechanism 612. For example, an air cylinder or the like can be used as the nozzle lifting mechanism 611, and a belt driving mechanism or the like can be used as the nozzle slide mechanism 612, for example. The slit nozzle 610 is moved along the arrangement direction of the three development processing units DEV by the nozzle slide mechanism 612, and can be positioned above any of the three development processing units DEV.

  A developer is supplied to the slit nozzle 610 from a developer supply unit (not shown). The supplied developer is discharged from the slit-shaped discharge port of the slit nozzle 610 in a strip shape. The slit nozzle 610 discharges developer to the substrate W accommodated in each of the three development processing units DEV. More specifically, in any of the three development processing units DEV, the slit nozzle 610 slides along the X-axis direction above the substrate W held in a stationary state or a low-speed rotation state by the rotation holding unit 110. However, the developer can be deposited on the upper surface of the substrate W by discharging the developer in a curtain shape.

  On the other hand, the multi-hole nozzle 620 is a developer nozzle having a plurality of small holes for discharging the developer. The perforated nozzle 620 is significantly shorter in length than the slit nozzle 610. The perforated nozzle 620 is moved up and down along the vertical direction by the nozzle lifting mechanism 621 and is slid along the horizontal direction (X-axis direction) by the nozzle slide mechanism 622. Similarly to the above, an air cylinder or the like can be used as the nozzle lifting mechanism 621, and a belt drive mechanism or the like can be used as the nozzle slide mechanism 622, for example. The multi-hole nozzle 620 is moved along the arrangement direction of the three development processing units DEV by the nozzle slide mechanism 622, and can be positioned above any of the three development processing units DEV.

  Developer is supplied to the porous nozzle 620 from a developer supply unit (not shown). The supplied developer is discharged from a plurality of small holes of the porous nozzle 620. The perforated nozzle 620 discharges the developing solution to the substrate W accommodated in each of the three development processing units DEV. More specifically, in any of the three development processing units DEV, the developer solution is discharged while the perforated nozzle 620 slides along the X-axis direction above the substrate W held by the rotation holding unit 110 and rotated at a low speed. By discharging from a plurality of small holes, the developer can be deposited on the upper surface of the substrate W. The multi-hole nozzle 620 moves so as to pass right above the center of the substrate W held by the rotation holding unit 110.

  In this way, both the slit nozzle 610 and the multi-hole nozzle 620 move along the arrangement direction of the plurality of development processing units DEV, and discharge the developer to the substrate W accommodated in each of the plurality of development processing units DEV. can do. That is, the slit nozzle 610 and the multi-hole nozzle 620 are not individually provided for each of the plurality of development processing units DEV, but are nozzles shared by the plurality of development processing units DEV. Whether the slit nozzle 610 or the porous nozzle 620 is used in the development processing can be appropriately selected according to the purpose and content of the process. Note that the sliding movement of the slit nozzle 610 and the multi-hole nozzle 620 is controlled by the cell controller CC so that they do not interfere with each other.

  In addition, a standby pod 70 is provided between the adjacent development processing units DEV in the housing 50. The standby pod 70 is for receiving developer nozzles (slit nozzle 610 and perforated nozzle 620) in a standby state. Specifically, the developer nozzle stands by at the standby pod 70 before and / or after the developer is discharged from any of the three development processing units DEV.

  The developer nozzle discharges and discharges the developer staying in the vicinity of the nozzle tip for a certain period of time in order to prevent the developer that has deteriorated or deteriorated over time near the nozzle tip from affecting the development processing result. Perform auto-dispensing. The developer nozzle performs such an automatic dispensing process in the standby pod 70. The standby pod 70 guides the developer discharged by the auto-dispensing process to a drain (not shown).

  The standby pod 70 is shared by the slit nozzle 610 and the multi-hole nozzle 620. That is, both the slit nozzle 610 and the multi-hole nozzle 620 wait on the standby pod 70. Therefore, the standby pod 70 is also a long box-shaped member so that the long slit nozzle 610 can be received. The length in the longitudinal direction of the standby pod 70 is longer than the diameter of the substrate W processed in the development processing unit DEV.

  9, the height position PT of the upper end of the standby pod 70 is higher than the height position CT of the upper end of the processing cup 120 at the processing position, and the height position PB of the lower end of the standby pod 70 is the processing position. Is lower than the height position CT of the upper end of the processing cup 120. Therefore, the upper side of the processing cup 120 when the processing cup 120 is raised to the processing position is covered with the standby pod 70.

  In addition, standby pods 75 and 76 are provided inside the housing 50 at both ends of the three development processing units DEV. The standby pod 75 at one end is for receiving the slit nozzle 610 in the standby state, and the standby pod 76 at the other end is for receiving the porous nozzle 620 in the standby state. The standby pods 75 and 76 guide the developer discharged by the auto-dispensing process to a drain (not shown).

  Also, as shown in FIG. 8, a filter unit 80 is provided above each of the three development processing units DEV. Air is supplied to the filter unit 80, and a clean air downflow is formed downward from the three filter units 80 inside the housing 50.

  Further, as shown in FIG. 7, a shutter 90 is provided on the front side (side facing the transport spaces TP <b> 3, TP <b> 4) of each of the three development processing units DEV in the wall surface of the housing 50. When the substrate W is carried in and out of the development processing unit DEV, the shutter 90 is opened. When performing development processing of the substrate W, the shutter 90 is closed.

<3. Operation of substrate processing apparatus>
Next, the operation of the substrate processing apparatus 1 having the above configuration will be described. First, a procedure for transporting a substrate in the entire substrate processing apparatus 1 will be briefly described. The processing procedure described below is executed by the control system of FIG. 6 controlling each part of the substrate processing apparatus 1 according to the description contents of the recipe received from the host computer 100.

  First, an unprocessed substrate W is loaded from the outside of the apparatus into the indexer block ID by AGV or the like while being stored in the carrier C. Subsequently, the unprocessed substrate W is paid out from the indexer block ID. Specifically, the indexer robot IDR takes out an unprocessed substrate W from a predetermined carrier C, and alternately transports and places it on the substrate platform PASS1U or the substrate platform PASS1L.

  When the unprocessed substrate W is placed on the substrate platform PASS1U, the main transport robot TR1 of the upper coating cell UC transports the substrate W to the cooling unit CP. The temperature of the substrate W is adjusted to a predetermined temperature by the cooling unit CP. Subsequently, the substrate W is transferred to one of the antireflection film coating units BARC by the main transfer robot TR1. In the coating processing unit BARC for antireflection film, a coating liquid for antireflection film is spin-coated on the substrate W. After the coating process is completed, the substrate W is transferred to the heating unit PHP by the main transfer robot TR1. By performing the heat treatment of the substrate W in the heating unit PHP, the coating liquid is dried, and a base antireflection film is formed on the substrate W. The antireflection film is a film formed on the base of the resist film in order to reduce standing waves and halation generated during exposure. Thereafter, the substrate W taken out from the heating unit PHP by the main transport robot TR1 is transported to the cooling unit CP and cooled. Before forming the base antireflection film, the substrate W may be transported to the heating unit PHP for the adhesion strengthening process and the adhesion strengthening process may be performed in a HMDS vapor atmosphere.

  The cooled substrate W is transferred from the cooling unit CP to one of the resist film coating units RES by the main transfer robot TR1. In the resist film coating processing unit RES, a resist film coating solution is spin-coated on the substrate W. In the present embodiment, a chemically amplified resist is used as the resist. After the coating process is completed, the substrate W is transferred to the heating unit PHP by the main transfer robot TR1. The substrate W is heated by the heating unit PHP, whereby the coating liquid is dried and a resist film is formed on the substrate W. Thereafter, the substrate W taken out from the heating unit PHP by the main transport robot TR1 is transported to the cooling unit CP and cooled. The cooled substrate W is taken out from the cooling unit CP by the main transport robot TR1 and placed on the substrate platform PASS3U.

  When the substrate W on which the resist film is formed is placed on the substrate platform PASS3U, the main transport robot TR3 of the upper development cell UD transports the substrate W to the edge exposure unit EEW. In the edge exposure unit EEW, the peripheral edge exposure process is performed by irradiating the peripheral edge with light while rotating the substrate W. The substrate W that has been subjected to the peripheral edge exposure processing is placed on the substrate platform PASS5U by the main transport robot TR3.

  On the other hand, the substrate W placed on the substrate platform PASS1L is subjected to the same processing as described above in the lower coating cell LC and the lower development cell LD and placed on the substrate platform PASS5L. The substrate W is transferred by the main transfer robot TR2 in the lower coating cell LC, and is transferred by the main transfer robot TR4 in the lower development cell LD. That is, the substrate W placed on the substrate platform PASS1U is transported from the upper coating cell UC to the substrate platform PASS5U via the substrate platform PASS3U and the upper substrate processing path passing through the upper development cell UD. Placed. The substrate W placed on the substrate platform PASS1L is transported from the lower coating cell LC via the substrate platform PASS3L along the lower substrate processing path passing through the lower development cell LD, and the substrate platform PASS5L. Placed on. The substrate W that has entered the upper substrate processing path does not move from the middle to the lower substrate processing path, and conversely, the substrate W that has entered the lower substrate processing path may move from the middle to the upper substrate processing path. Absent.

  The substrate W placed on the substrate platforms PASS5U and PASS5L is placed on the substrate platform PASS7 by the first interface robot IFR1 of the interface block IF. The substrate W placed on the substrate platform PASS7 is received by the second interface robot IFR2, carried into the exposure apparatus EXP, and subjected to pattern exposure processing. Since a chemically amplified resist is used in the present embodiment, an acid is generated by a photochemical reaction in the exposed portion of the resist film formed on the substrate W. In the exposure apparatus EXP, immersion exposure processing may be performed on the substrate W.

  The exposed substrate W after the pattern exposure processing is returned from the exposure apparatus EXP to the interface block IF, and placed on the substrate platform PASS8 by the second interface robot IFR2. When the exposed substrate W is placed on the substrate platform PASS8, the first interface robot IFR1 receives the substrate W and is heated in the upper development cell UD or the lower development cell LD of the development processing block SD. Transport to unit PHP. The heating unit PHP of the transport destination is a heating unit PHP arranged in a row close to the interface block IF. In the heating unit PHP, the product generated by the photochemical reaction at the time of exposure is used as an acid catalyst to advance reactions such as crosslinking and polymerization of the resin of the resist, and after exposure to locally change the solubility in the developer only in the exposed part Heat treatment (Post Exposure Bake) is performed. The substrate W that has been subjected to the post-exposure heat treatment is cooled by being transported by the local transport arm 26 provided in the heating unit PHP, and the chemical reaction is stopped. Subsequently, the substrate W is taken out from the heating unit PHP by the first interface robot IFR1, and placed on the substrate platform PASS6U or the substrate platform PASS6L.

  When the substrate W is placed on the substrate platform PASS6U, the main transport robot TR3 of the upper development cell UD receives the substrate W and transports it to the cooling unit CP. In the cooling unit CP, the substrate W that has been subjected to the post-exposure heat treatment is further cooled and accurately adjusted to a predetermined temperature. Thereafter, the main transfer robot TR3 takes out the substrate W from the cooling unit CP and transfers it to one of the development processing units DEV. Although the operation in the development processing unit DEV will be further described later, a developing solution is supplied to the substrate W to advance the development processing. After the development process is finished, the substrate W is transported to the heating unit PHP by the main transport robot TR3. At this time, it is transported to the heating unit PHP arranged in a row near the coating processing block SC. In the heating unit PHP, the substrate W is dried by heat treatment. Thereafter, the substrate W is transported to the cooling unit CP by the main transport robot TR3 and cooled. The cooled substrate W is taken out from the cooling unit CP by the main transport robot TR3 and placed on the substrate platform PASS4U. The substrate W placed on the substrate platform PASS4U is placed on the substrate platform PASS2U as it is by the main transfer robot TR1 of the upper coating cell UC.

  On the other hand, the substrate W placed on the substrate platform PASS6L is subjected to the same processing as described above in the lower development cell LD and the lower coating cell LC and placed on the substrate platform PASS2L. That is, the substrate W placed on the substrate platform PASS6U is transported from the upper development cell UD to the substrate platform PASS2U through the upper coating cell UC via the substrate platform PASS4U. Placed. The substrate W placed on the substrate platform PASS6L is transported from the lower development cell LD via the substrate platform PASS4L along the lower substrate processing path through the lower coating cell LC to be transferred to the substrate platform PASS2L. Placed on. Similarly to the forward path, the substrate W that has entered the upper substrate processing path does not move from the middle to the lower substrate processing path. It doesn't move on the route.

  The processed substrates W placed on the substrate platforms PASS2U and PASS2L are stored in a predetermined carrier C by the indexer robot IDR having the indexer block ID. Thereafter, the carrier C storing the predetermined number of processed substrates W is carried out of the apparatus, and a series of photolithography processes are completed.

<4. Operation of development processing apparatus>
Next, the operation of the development processing apparatus will be described. Here, the operation of the development processing apparatus provided in the upper development cell UD will be described, but the same applies to the development processing apparatus provided in the lower development cell LD. The operation of the development processing apparatus proceeds when the cell controller CC that manages the main transport robots TR3 and TR4 controls each part of the development processing apparatus.

  FIG. 10 is a diagram illustrating operations of the slit nozzle 610 and the multi-hole nozzle 620 in the development processing apparatus. After the post-exposure heat treatment is finished, the substrate W, which has been adjusted to a predetermined temperature, is carried into one of the three development processing units DEV by the main transport robot TR3. When the substrate W is carried in, the shutter 90 is opened, and the holding arm 37a (or 37b) of the main transfer robot TR3 enters from there. Further, the processing cup 120 is lowered to the carry-in / out position, and the carried-in substrate W is held by the spin chuck 111 of the rotation holding unit 110. After the substrate W is carried in, the holding arm 37a (or 37b) is withdrawn, and the shutter 90 is closed. Then, the processing cup 120 is raised to the processing position.

  When supplying the developer by the slit nozzle 610, the substrate W is held in a stationary state by the rotation holding unit 110. Then, as shown in FIG. 10, the slit nozzle 610 waiting in the standby pod 75 moves right above one end side of the substrate W, and horizontally moves toward the other end side while discharging the developer in a strip shape. As a result, the developer is deposited on the upper surface of the substrate W, and the development process proceeds. The slit nozzle 610 that has finished supplying the developer moves to the standby pod 70 and stands by.

  After a predetermined time has elapsed in the state where the developer is accumulated, the rinse nozzle 130 moves to the rinse position and discharges pure water onto the upper surface of the substrate W. Thereby, the density | concentration of a developing solution becomes thin and development processing reaction stops. Then, the rotation holding unit 110 rotates the substrate W to shake off the water droplets and dry them. After the swing-off drying process is completed, the processing cup 120 is lowered again to the loading / unloading position, the shutter 90 is opened, and the substrate W is unloaded by the main transfer robot TR3.

  On the other hand, when the developer is supplied by the multi-hole nozzle 620, the rotation holding unit 110 rotates the substrate W at a low speed. Then, the porous nozzle 620 that has been waiting in the standby pod 76 moves to a position directly above the rotation center of the substrate W, and horizontally moves toward the end of the substrate W while discharging the developer from the plurality of small holes. As a result, the developer is deposited on the upper surface of the plate W, and the development process proceeds. The porous nozzle 620 that has finished supplying the developer moves to the standby pod 70 and waits. The perforated nozzle 620 may be moved horizontally from the end of the rotating substrate W toward the center of rotation.

  In the same manner as described above, after a predetermined time has elapsed in the state in which the developer is accumulated, the rinse nozzle 130 moves to the rinse position and discharges pure water onto the upper surface of the substrate W, so that the concentration of the developer is increased. The development reaction stops when it becomes thinner. Then, the rotation holding unit 110 rotates the substrate W to shake off the water droplets and dry them. After the swing-off drying process is completed, the processing cup 120 is lowered again to the loading / unloading position, the shutter 90 is opened, and the substrate W is unloaded by the main transfer robot TR3.

  Both the slit nozzle 610 and the multi-hole nozzle 620 move from the standby pod 70 to above the substrate W when the subsequent new substrate W is carried into any of the development processing units DEV. The slit nozzle 610 and the multi-hole nozzle 620 may perform auto-dispensing processing in the standby pod 70.

  When the rotation holding unit 110 rotates the substrate W and shakes off the water droplets, most of the scattered water droplets are received and collected by the processing cup 120, but a part of the water droplets is scattered over the processing cup 120 as mist. Sometimes. In the present embodiment, the upper side of the processing cup 120 when the processing cup 120 is raised to the processing position is covered with the standby pod 70. Therefore, even if the mist is scattered beyond the processing cup 120, the standby pod 70 prevents the mist from scattering to the adjacent development processing unit DEV. As a result, it is possible to prevent the mist scattered from the adjacent development processing unit DEV from adhering to the substrate W and contaminating the substrate W. That is, the standby pod 70 has a function as a partition wall for partitioning the adjacent development processing units DEV in addition to the original function of receiving the developer nozzle in the standby state.

  In the development processing apparatus of the present embodiment, the slit nozzle 610 and the porous nozzle 620 are not individually provided in each of the three development processing units DEV, but one slit nozzle 610 and the porous nozzle 620 are provided in the three development processing units DEV. To share. For this reason, the number of parts related to the developer nozzle is reduced. Further, by serving as a partition wall for partitioning the development processing unit DEV adjacent to the standby pod 70 that receives the standby state developing solution nozzle 70, there is no need to newly provide a separate partition plate, further reducing the number of parts. can do. As a result, the cost required for the development processing apparatus can be reduced.

  Further, if it is not necessary to separately provide a partition plate, it is not necessary to separately design the standby pod 70 and the partition plate, and a space for installing the partition plate in the limited restricted space in the housing 50 is eliminated. It can also be reduced. For this reason, the reduced space can be used for the purpose of realizing other required specifications, and a high design margin can be provided in the restricted space of the housing 50. Alternatively, the area occupied by the development processing apparatus can be reduced by the reduced space.

  Further, since at least a space that allows at least the slit nozzle 610 and the multi-hole nozzle 620 to pass therethrough is vacant above the standby pod 70, the atmosphere of the three development processing units DEV is not completely blocked, but the atmosphere of each other. Is in communication. For this reason, it is possible to make the atmosphere such as humidity and temperature common to the three development processing units DEV, and to prevent machine differences from occurring. As a result, uniform development processing can be performed for the three development processing units DEV.

  Further, a clean air downflow is formed downward from the three filter units 80 provided in the ceiling portion of the housing 50. Since the standby pod 70 also functions as a partition wall, the downflows in the three development processing units DEV are prevented from interfering with each other, and as a result, a stable clean air stream is formed in each development processing unit DEV. Can do. For this reason, more stable development processing can be performed.

<5. Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. For example, in the above embodiment, three development processing units DEV are provided in the development processing apparatus, but the number of development processing units DEV provided in one development processing apparatus is not limited to three. It may be one or four or more. Regardless of the number of installations, if the standby pod 70 similar to that of the above embodiment is provided between adjacent development processing units DEV in the arrangement of the plurality of development processing units DEV, the same effect can be obtained.

  Further, the configuration of the standby pod provided between adjacent development processing units DEV may be as shown in FIGS. A standby pod 170 shown in FIG. 11 includes an atmosphere separation plate 171 inside. The slit nozzle 610 waits on one side of the atmosphere separation plate 171 and the porous nozzle 620 waits on the other side. In this way, even if the type of the developer discharged from the slit nozzle 610 and the type of the developer discharged from the perforated nozzle 620 are different, each developer affects the slit nozzle 610 or the perforated nozzle 620. Can be prevented.

  The standby pod 270 shown in FIG. 12 includes nozzle cleaning mechanisms 271 and 272 inside. The nozzle cleaning mechanism 271 cleans the tip of the slit nozzle 610 including the slit-like discharge port. The nozzle cleaning mechanism 272 cleans the tip of the multi-hole nozzle 620 including a plurality of small holes. If such nozzle cleaning mechanisms 271 and 272 are provided, it is possible to perform the cleaning process of the slit nozzle 610 and the porous nozzle 620 that are waiting in the standby pod 70.

  In the above-described embodiment, two types of developer nozzles, that is, the slit nozzle 610 and the multi-hole nozzle 620 are provided in the development processing apparatus. However, the two slit nozzles 610 or the two multi-hole nozzles 620 are provided. You may do it. In this case, when the configuration as shown in FIG. 12 is adopted, the two nozzle cleaning mechanisms 271 or the two nozzle cleaning mechanisms 272 may be provided inside the standby pod 270. Further, only one developer nozzle may be provided in the development processing apparatus, or a different type of developer nozzle may be provided. In any case, the developer nozzle is shared by the plurality of development processing units DEV.

  Further, in the operation example shown in FIG. 10, the slit nozzle 610 and the porous nozzle 620 move to the standby pod 70 after waiting for the discharge of the developer, but wait in advance before discharging the developer. You may make it move to 70 and wait.

  In the above-described embodiment, the standby pods 75 and 76 provided at both ends of the three development processing units DEV may be configured similarly to the standby pod 70.

  In addition, the overall configuration of the substrate processing apparatus 1 is not limited to the form shown in FIGS. 1 to 5, and the processing unit and the transfer robot can be used as long as the development processing apparatus according to the present invention is incorporated. The number and layout can be changed as appropriate.

1 is a plan view of a substrate processing apparatus incorporating a development processing apparatus according to the present invention. It is a schematic side view which shows the arrangement configuration of the liquid processing unit of the substrate processing apparatus of FIG. It is a schematic side view which shows the arrangement configuration of the heat processing unit of the substrate processing apparatus of FIG. It is a side view which shows the arrangement configuration of the conveyance robot and substrate mounting part of the substrate processing apparatus of FIG. It is a side view which shows the structure of an interface block. It is a block diagram which shows the outline of the control system of the substrate processing apparatus of FIG. 1 is a plan view of a development processing apparatus according to the present invention. FIG. 8 is a side view of the development processing apparatus of FIG. 7. FIG. 6 is an enlarged side view of two adjacent development processing units. It is a figure which shows operation | movement of the slit nozzle in a developing processing apparatus, and a porous nozzle. It is a figure which shows the other structural example of a standby pod. It is a figure which shows the other structural example of a standby pod.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 50 Housing | casing 70,170,270 Standby pod 80 Filter unit 110 Rotation holding part 120 Processing cup 125 Cup raising / lowering mechanism 130 Rinse nozzle 610 Slit nozzle 620 Porous nozzle BARC Antireflection film coating processing unit CP Cooling unit DEV Development Processing Unit ID Indexer Block IDR Indexer Robot IF Interface Block IFR1 First Interface Robot IFR2 Second Interface Robot LC Lower Coating Cell LD Lower Development Cell PHP Heating Unit RES Resist Film Coating Processing Unit SC Coating Processing Block SD Development Processing Block TR1 , TR2, TR3, TR4 Main transfer robot UC Upper coating cell UD Upper development cell W Substrate

Claims (3)

A development processing apparatus for supplying a developing solution to a substrate to perform development processing,
A plurality of development processing units arranged in a line at the same height in a common casing with the atmosphere communicating with each other;
A developer nozzle that moves along the direction in which the plurality of development processing units are arranged, and that discharges the developer to the substrates accommodated in each of the plurality of development processing units;
A standby pod that is provided between adjacent development processing units in the array of the plurality of development processing units and that receives a standby developing solution nozzle;
With
Each of the plurality of development processing units is
Rotation holding means for holding and rotating the substrate;
A cup surrounding the periphery of the substrate held by the rotation holding means;
Lifting and lowering means for raising and lowering the cup between a loading / unloading position when loading / unloading the substrate with respect to the rotation holding means and a processing position when developing the substrate held by the rotation holding means;
With
The height of the upper end of the standby pod is higher than the upper end of the cup at the processing position, and the height of the lower end of the standby pod is lower than the upper end of the cup at the processing position. apparatus. The development processing apparatus according to claim 1.
A development processing apparatus, wherein the standby pod is provided with a cleaning mechanism for cleaning the developer nozzle. The development processing apparatus according to claim 1 or 2,
The substrate to be developed by the plurality of development processing units has a circular shape,
The standby pod has an elongated shape,
The development processing apparatus, wherein a length of the standby pod in a longitudinal direction is longer than a diameter of the substrate.

Images