JP2010067805A - Grinding device, grinding method, and method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a grinding device capable of grinding a semiconductor wafer within a thickness tolerance for high-precision semiconductor wafers, to provide a grinding method, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The grinding method includes a step of measuring a thickness of a protection tape 1 stuck to a front surface of a substrate 2, a step of roughly grinding a rear surface of the substrate 2 on which the thickness of the protection tape 1 has been measured, and a step of finishing the rear surface of the substrate 2 so that a total thickness of the substrate 2 and the protection tape 1 has a set value of finish thickness. The set value of finish thickness results from adding a measurement value of the thickness of the protection tape to a preliminarily set thickness of the semiconductor wafer after grinding. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a grinding apparatus, a grinding method, and a semiconductor device manufacturing method, and more particularly, a grinding apparatus, a grinding method, and a semiconductor device manufacturing method capable of grinding a semiconductor wafer within a highly accurate thickness tolerance of a semiconductor wafer. About.

  Conventionally, while further miniaturization of devices has been demanded, after forming a circuit pattern on the surface of a semiconductor wafer, the back surface of the semiconductor wafer is polished or ground. Thereby, the thickness of the semiconductor wafer after the circuit pattern is laminated is reduced.

  In this semiconductor wafer grinding process, an adhesive protective tape is attached to the circuit pattern forming surface of the semiconductor wafer in order to protect the semiconductor wafer. Thereafter, the surface of the semiconductor wafer is scraped while supplying the pure water as cooling water with a grindstone with the surface to which the protective tape is applied facing downward (see, for example, Patent Document 1).

  Further, in the conventional grinding process, the grinding process is performed on the assumption that the thickness of the protective tape is constant without considering the variation in the thickness of the protective tape for grinding.

  Semiconductor wafer grinding is performed until a desired thickness is obtained while always measuring the thickness of the semiconductor wafer in a grinding apparatus. At this time, the thickness of the semiconductor wafer including the thickness of the protective tape is measured while grinding by a measuring device in the grinding apparatus. Further, since the thickness of the protective tape for grinding is assumed to be constant, the thickness of the semiconductor wafer is predicted.

  In addition, a single dummy substrate is ground before the mass-produced product is ground, and the measurement device in the grinding device is corrected with reference to the result.

  Specifically, in a conventional semiconductor wafer grinding process, for example, when a protective tape having a nominal thickness of 170 μm is used and the thickness of the semiconductor wafer is ground to 450 μm, the protective tape has a thickness equal to that of the semiconductor wafer. The thickness including the thickness of 620 μm must be ground with the finished thickness set value. First, a single dummy substrate is ground until the thickness including the thickness of the protective tape reaches 620 μm. Next, the protective tape is peeled off and the thickness of the dummy substrate is measured. As a result, since the thickness of the dummy substrate was 452 μm, it is estimated that the thickness of the protective tape was 168 μm. That is, 2 μm was thinner than the nominal thickness of 170 μm of the protective tape. With reference to this result, the measuring instrument in the grinding apparatus is corrected, and the set value of the finished thickness is set to 618 μm to continuously grind the semiconductor wafer as a product.

JP-A-8-181197 (paragraphs 0001 to 0033)

  By the way, in recent MEMS devices and the like, in order to guarantee the performance, high accuracy is required for the thickness tolerance of a semiconductor wafer which is an element part of a mechanical structure.

  However, as described above, after the set value of the finished thickness is corrected by one dummy substrate, the thickness of the semiconductor wafer including the thickness of the protective tape is assumed, assuming that the thickness of the protective tape is 168 μm. Grinding is performed until becomes 618 μm. For this reason, in addition to the variation in the thickness of the semiconductor wafer due to the grinding apparatus, a variation in the thickness of the protective tape for grinding is added. As a result, the semiconductor wafer cannot be ground so as to be within the thickness tolerance of the highly accurate semiconductor wafer.

  Some embodiments according to the present invention are a grinding apparatus, a grinding method, and a method for manufacturing a semiconductor device that can grind a semiconductor wafer within a thickness tolerance of a highly accurate semiconductor wafer.

In order to solve the above problems, a grinding apparatus according to the present invention is a grinding apparatus for grinding a back surface of a substrate.
A protective tape thickness measuring instrument for measuring the thickness of the protective tape attached to the surface of the substrate;
A first chuck table on which the substrate on which the thickness of the protective tape is measured by the protective tape thickness measuring instrument is placed;
A first grindstone for roughly grinding a back surface of the substrate placed on the first chuck table;
A second chuck table on which the substrate ground by the first grindstone is placed;
A second grindstone for finish grinding a back surface of the substrate placed on the second chuck table;
A grinding object thickness measuring instrument for measuring the thickness of the substrate and the protective tape placed on the second chuck table;
When finishing grinding the back surface of the substrate with the second grindstone, a control unit that controls the grinding to stop when the measured value measured by the thickness measuring instrument to be ground reaches a finished thickness setting value. When,
Comprising
The control unit calculates a thickness obtained by adding the thickness of the protective tape measured by the protective tape thickness measuring instrument to the thickness of the semiconductor wafer after grinding, which is set in advance, and calculates the calculated thickness. Control is made so as to obtain a finished thickness setting value.

  According to the grinding apparatus, the thickness of the semiconductor wafer after the grinding process set in advance is calculated by adding the thickness of the protective tape measured by the protective tape thickness measuring instrument, and this calculation is performed. The thickness is the finished thickness setting value. Thereby, it can suppress that the dispersion | variation in the thickness of the protective tape for grinding influences the dispersion | variation in the thickness of the semiconductor wafer after a grinding process. Therefore, the processing accuracy of the semiconductor wafer is improved, and it becomes easy to grind the semiconductor wafer to a desired thickness within the thickness tolerance of the highly accurate semiconductor wafer.

A grinding apparatus according to the present invention is a grinding apparatus that grinds the back surface of a substrate having a protective tape attached to the surface.
A first chuck table for placing the substrate;
A first grindstone for roughly grinding a back surface of the substrate placed on the first chuck table;
A protective tape thickness measuring instrument for measuring the thickness of the protective tape after being ground by the first grindstone;
A second chuck table for placing the substrate after the thickness of the protective tape is measured by the protective tape thickness measuring instrument;
A second grindstone for finish grinding a back surface of the substrate placed on the second chuck table;
A grinding object thickness measuring instrument for measuring the thickness of the substrate and the protective tape placed on the second chuck table;
When finishing grinding the back surface of the substrate with the second grindstone, a control unit that controls the grinding to stop when the measured value measured by the thickness measuring instrument to be ground reaches a finished thickness setting value. When,
Comprising
The control unit calculates a thickness obtained by adding the thickness of the protective tape measured by the protective tape thickness measuring instrument to the thickness of the semiconductor wafer after grinding, which is set in advance, and calculates the calculated thickness. Control is made so as to obtain a finished thickness setting value.

A grinding apparatus according to the present invention is a grinding apparatus that grinds the back surface of a substrate having a protective tape attached to the surface.
A first chuck table for placing the substrate;
A first grindstone for roughly grinding a back surface of the substrate placed on the first chuck table;
A second chuck table on which the substrate ground by the first grindstone is placed;
A second grindstone for finish grinding a back surface of the substrate placed on the second chuck table;
A grinding object thickness measuring instrument for measuring the thickness of the substrate and the protective tape placed on the second chuck table;
When finishing grinding the back surface of the substrate with the second grindstone, a control unit that controls the grinding to stop when the measured value measured by the thickness measuring instrument to be ground reaches a finished thickness setting value. When,
Comprising
The control unit calculates a thickness obtained by adding a measured value of the thickness of the protective tape to a thickness of a semiconductor wafer after grinding, which is set in advance, and sets the calculated thickness as the finished thickness setting value. It is characterized by controlling to.

  Further, in the grinding apparatus according to the present invention, the measured value of the thickness of the protective tape is a value measured before or after the protective tape is attached to the substrate outside the grinding apparatus. Features.

  Further, in the grinding method according to the present invention, when measuring the thickness of the protective tape, an optical measuring method using reflection of a laser beam is used.

A grinding apparatus according to the present invention is a grinding method for grinding a back surface of a substrate.
Measuring the thickness of the protective tape affixed to the surface of the substrate;
Rough grinding the back surface of the substrate, the thickness of the protective tape was measured;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of the semiconductor wafer after grinding.

The grinding apparatus according to the present invention is a grinding method for grinding the back surface of a substrate having a protective tape attached to the surface.
Rough grinding the back surface of the substrate;
Measuring the thickness of the protective tape;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of the semiconductor wafer after grinding.

A grinding apparatus according to the present invention is a grinding method for grinding a back surface of a substrate.
Measuring the thickness of the protective tape before being attached to the surface of the substrate;
Rough grinding the back surface of the substrate with the protective tape attached to the surface;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of the semiconductor wafer after grinding.

A method of manufacturing a semiconductor device according to the present invention includes a step of grinding a back surface of a substrate.
The process includes
Measuring the thickness of the protective tape affixed to the surface of the substrate;
Rough grinding the back surface of the substrate, the thickness of the protective tape was measured;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of the semiconductor wafer after grinding.

A method for manufacturing a semiconductor device according to the present invention includes a step of grinding a back surface of a substrate having a protective tape attached to the surface.
The process includes
Rough grinding the back surface of the substrate;
Measuring the thickness of the protective tape;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of the semiconductor wafer after grinding.

A method of manufacturing a semiconductor device according to the present invention includes a step of grinding a back surface of a substrate.
The process includes
Measuring the thickness of the protective tape before being attached to the surface of the substrate;
Rough grinding the back surface of the substrate with the protective tape attached to the surface;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of the semiconductor wafer after grinding.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIGS. 1A to 1C are schematic views for explaining a semiconductor wafer grinding method according to the first embodiment of the present invention.

First, a grinding apparatus according to this embodiment will be described.
The grinding apparatus includes a protective tape thickness measuring device 3 for measuring the thickness of the protective tape 1, a rough grinding wheel 4 for roughing the back surface of the semiconductor wafer 2, and a finish for finishing the back surface of the semiconductor wafer 2. A fine grindstone 5, a rotation mechanism (not shown) such as a motor for rotating these grindstones 4, 5, a chuck table for placing the semiconductor wafer 2, a motor for rotating the chuck table, etc. A rotation mechanism (not shown), a supply mechanism for supplying pure water as cooling water to the surface of the semiconductor wafer 2 during grinding, and the thickness of the protective tape 1 while the semiconductor wafer 2 is being ground by the grindstone 5 A thickness of the semiconductor wafer 2 including the thickness of the protective tape 1 while the semiconductor wafer 2 is being ground by the grindstone 4 and a first gauge (not shown) for measuring the thickness of the semiconductor wafer 2 including And a control unit (not shown) for controlling the operation of the protective tape thickness measuring instrument 3 and the grindstones 4 and 5 so as to realize a grinding method described later. Have.

  The first and second gauges mechanically measure the distance between the surface of the chuck table and the back surface of the semiconductor wafer 2 in a state where the semiconductor wafer 2 is placed on the chuck table.

  Next, a method for grinding a semiconductor wafer using the above grinding apparatus will be described. In addition, the circuit pattern is formed in the semiconductor wafer 2 to be ground, and the surface on which the circuit pattern is formed is the front surface, and the surface on which the circuit pattern is not formed is the back surface. Further, the grinding device is controlled by the control unit so as to realize the following grinding method.

  First, the protective tape 1 for grinding is affixed on the surface of the semiconductor wafer 2 on which the circuit pattern is formed (FIG. 1A). At this time, the protective tape for grinding is wound around a feeding roll (not shown), and is cut along the outer periphery of the semiconductor wafer 2 on the surface of the semiconductor wafer 2.

  Next, as shown in FIG. 1A, the thickness of the protective tape 1 for grinding attached to the surface of the first semiconductor wafer 2 is measured by the protective tape thickness measuring device 3. As the protective tape thickness measuring device 3, for example, an optical measuring device using reflection of a laser beam is used. Further, by measuring the thickness of the protective tape 1, the thickness of the semiconductor wafer 2 can also be measured. That is, when the thickness of the semiconductor wafer 2 including the thickness of the protective tape 1 is measured by the first or second gauge in the grinding apparatus, the thickness obtained by subtracting the thickness of the protective tape 1 is the thickness of the semiconductor wafer 2. It becomes thickness. The protective tape 1 uses a transparent material such as vinyl chloride.

  Next, the measured value of the thickness of the protective tape 1 before grinding measured by the protective tape thickness measuring device 3 is incorporated into the control unit. And in this control part, the thickness which added the measured value of the thickness of the protective tape 1 to the finishing thickness after the grinding process of the semiconductor wafer 2 set beforehand is calculated. This calculated thickness is a set value of the thickness at the end of finish grinding of the semiconductor wafer 2, that is, the finished thickness.

  Next, as shown in FIG. 1 (b), the surface of the first semiconductor wafer 2 to which the protective tape 1 for grinding is attached is faced down, and the back surface of the semiconductor wafer 2 is faced up. Secure it on a chuck table (not shown). At this time, for example, the chuck table is provided with vacuum suction means, and the semiconductor wafer is fixed to the chuck table by sucking the protective tape 1 stretched on the semiconductor wafer 2. Thereafter, while rotating the chuck table, the rotating grindstone 4 for roughing which is used for roughing is pressed against the back surface of the semiconductor wafer 2 for rough grinding. At this time, rough grinding of the back surface of the semiconductor wafer 2 is stopped in a state thicker than the set value of the finished thickness. During the rough grinding of the first semiconductor wafer as described above, the thickness of the protective tape 1 of the second semiconductor wafer to be roughed and ground next is measured by the protective tape thickness measuring device 3 shown in FIG. Measure with

  Next, as shown in FIG. 1 (c), the surface of the first semiconductor wafer 2 to which the protective tape 1 for grinding is attached is faced down, and the back surface of the semiconductor wafer 2 is faced up. Secure it on a chuck table (not shown). At this time, for example, the chuck table is provided with vacuum suction means, and the semiconductor wafer is fixed to the chuck table by sucking the protective tape 1 stretched on the semiconductor wafer 2. Thereafter, while rotating the chuck table, the rotating grinding wheel 5 for fine finishing is pressed against the back surface of the semiconductor wafer 2 for finish grinding. Then, by finishing grinding the back surface of the semiconductor wafer 2 while measuring the thickness with the first gauge, the processing proceeds to the set value of the finished thickness, and the measured value by the first gauge is the set value of the finished thickness. When the value is reached, the grinding with the grindstone 5 is finished. During the finishing process of the first semiconductor wafer, the second semiconductor wafer is subjected to the rough grinding process shown in FIG. 1B, and then the third semiconductor wafer to be further subjected to the rough grinding process. The thickness of the protective tape 1 of the semiconductor wafer is measured by a protective tape thickness measuring device 3 shown in FIG.

  As described above, the thickness of the protective tape 1 for grinding by the protective tape thickness measuring device 3 is measured for each semiconductor wafer when a plurality of semiconductor wafers are ground by continuous processing. Thereby, the dispersion | variation in the thickness of the masking tape 1 is not added to the finishing thickness for every semiconductor wafer. As a result, the semiconductor wafer 2 after grinding can be set to a thickness within a high accuracy tolerance.

  In the grinding apparatus, the thickness of the protective tape 1 of the second semiconductor wafer is measured during the grinding of the first semiconductor wafer. That is, when grinding a plurality of semiconductor wafers by continuous processing, the thickness of the first protective tape 1 for grinding is measured, and the set value of the finished thickness is calculated by the control unit. After that, grinding is performed. During the first grinding process, the thickness of the protective tape 1 for the second grinding is measured, and the set value of the finished thickness of the second semiconductor wafer is calculated by the control unit. is doing. In this way, after measuring the thickness of the first protective tape 1 for grinding, since each process is repeated, the total processing time of all processes for grinding a plurality of semiconductor wafers is the protective tape. Only the measurement time of the thickness of the first protective tape 1 is increased as compared with the case where the semiconductor wafer is ground without measuring the thickness of 1.

(Example)
An example will be described in which a protective tape having a nominal thickness of 170 μm is used to grind the semiconductor wafer to a thickness of 450 μm.

  Measure the thickness of the protective tape before grinding. As a result of measuring the thickness of the protective tape, the thickness of the protective tape was 171 μm. Therefore, the above-described finished thickness setting value (the thickness of the semiconductor wafer 2 + the thickness of the protective tape 1) is set to 621 μm. And it grinds so that it may become this finishing thickness setting value. Thereby, the thickness variation of the protective tape can be canceled for each semiconductor wafer. For example, when the thickness variation of the protective tape is 3 μm and the grinding accuracy in the grinding device (motor, chuck table, grindstone, etc.) is a set value ± 5 μm, the conventional method performs grinding with the thickness of the protective tape constant. The processing accuracy of the grinding device of this embodiment can be improved to the set value of ± 5 μm, whereas the processing accuracy of the grinding device of the present embodiment can be improved to the set value of ± 5 μm. Therefore, it is possible to cope with high-precision grinding required for MEMS devices and the like.

  As described above, according to the first embodiment of the present invention, by measuring the thickness of the protective tape 1 for grinding for each semiconductor wafer, the thickness to be actually ground for each semiconductor wafer is automatically corrected. Is possible. Thereby, it can suppress that the dispersion | variation in the thickness of the protective tape for grinding influences the dispersion | variation in the thickness of the semiconductor wafer after a grinding process. Therefore, the processing accuracy of the semiconductor wafer is improved, and it becomes easy to grind the semiconductor wafer to a desired thickness within the thickness tolerance of the highly accurate semiconductor wafer.

  Further, by measuring the thickness of the protective tape 1 for each semiconductor wafer 2 and automatically correcting the actual grinding thickness, it is possible to improve the processing accuracy while using the conventional grinding device. Become.

  Next, a second embodiment of the present invention will be described with reference to FIGS. 2A to 2C, and portions different from the first embodiment will be described. FIGS. 2A to 2C are schematic views for explaining a semiconductor wafer grinding method according to the second embodiment of the present invention.

  First, in the semiconductor wafer 2 on which the circuit pattern is formed, the protective tape 1 for grinding is attached to the surface of the semiconductor wafer 2.

  Next, as shown in FIG. 2 (a), the surface of the first semiconductor wafer 2 to which the protective tape 1 for grinding is attached is faced down and the back surface of the semiconductor wafer 2 is faced up. Place on a chuck table (not shown). Thereafter, the back surface of the semiconductor wafer 2 is rough-ground and ground with a coarse-grained grindstone 4 for roughing. At this time, the rough grinding of the back surface of the semiconductor wafer 2 is stopped in the middle of the set value of the finished thickness of the semiconductor wafer 2.

  Next, as shown in FIG. 2B, the surface of the semiconductor wafer 2 to which the protective tape 1 for grinding is attached is turned up. Then, the thickness of the protective tape 1 for grinding affixed on the surface of the first semiconductor wafer 2 is measured by the protective tape thickness measuring device 3. As the protective tape thickness measuring device 3, for example, an optical measuring device using reflection of a laser beam is used. Further, by measuring the thickness of the protective tape 1 after rough grinding, the thickness of the semiconductor wafer 2 after rough grinding can also be measured. In other words, the thickness obtained by subtracting the thickness of the protective tape 1 from the measurement value obtained by measuring the thickness of the semiconductor wafer 2 including the thickness of the protective tape 1 with the first gauge in the grinding apparatus is the semiconductor after rough grinding. This is the thickness of the wafer 2.

  Subsequently, the measured value of the thickness of the protective tape 1 after rough grinding measured by the protective tape thickness measuring device 3 is incorporated into the control unit of the grinding apparatus. And in this control part, the thickness which added the measured value of the thickness of the protective tape 1 to the finishing thickness after the grinding process of the semiconductor wafer 2 set beforehand is calculated. This calculated thickness is a set value of the thickness at the end of finish grinding of the semiconductor wafer 2, that is, the finished thickness. Further, during the measurement of the thickness of the protective tape 1 of the first semiconductor wafer, rough grinding as shown in FIG. 2A is performed on the second semiconductor wafer.

  Next, as shown in FIG. 2C, the chuck table (not shown) of the grinding apparatus is shown with the front surface of the semiconductor wafer 2 to which the protective tape 1 for grinding is attached facing down and the back surface of the semiconductor wafer 2 facing up. Put on. Thereafter, the back surface of the semiconductor wafer 2 is finish-ground with a fine grinding wheel 5 for finishing. At this time, the process proceeds to the set value of the finished thickness of the semiconductor wafer 2 by finish grinding of the back surface of the semiconductor wafer 2. During the finishing process of the first semiconductor wafer, the thickness of the protective tape 1 shown in FIG. 1B is measured for the second semiconductor wafer. Rough grinding shown in 1 (a) is performed.

  As described above, also in the second embodiment of the present invention, the same effect as that of the first embodiment can be obtained.

  Next, a third embodiment of the present invention will be described with reference to FIGS. 3A and 3B, and portions different from the first embodiment will be described. FIGS. 3A and 3B are schematic views for explaining a method for measuring the thickness of the protective tape according to the third embodiment of the present invention.

  First, as shown in FIGS. 3A and 3B, in a semiconductor wafer 2 on which a circuit pattern is formed, a protective tape 1 for grinding is attached to the surface of the semiconductor wafer. At this time, the protective tape for grinding is wound around the feeding roll, and is cut along the outer periphery of the semiconductor wafer 2 on the surface of the semiconductor wafer 2.

  Next, as shown in FIG. 3A, the thickness of the protective tape 6 for grinding left after cutting is measured by the protective tape thickness measuring device 3. The measurement location at this time is the vicinity of the cut location 5 of the protective tape 6 affixed to the semiconductor wafer. Thereby, the thickness equivalent to the thickness of the protective tape 1 for grinding affixed on the surface of the semiconductor wafer 2 can be measured.

  Next, the measured value of the thickness of the protective tape 1 is automatically input to the control unit of the grinding apparatus. And in this control part, the thickness which added the measured value of the thickness of the protective tape 1 to the finishing thickness after the grinding process of the semiconductor wafer 2 set beforehand is calculated. This calculated thickness is a set value of the thickness at the end of finish grinding of the semiconductor wafer 2, that is, the finished thickness. Thereafter, roughing and finishing are performed in the grinding apparatus.

  As described above, also in the third embodiment of the present invention, the same effect as that of the first embodiment can be obtained.

  Next, a fourth embodiment of the present invention will be described with reference to FIGS. 4A and 4B, and portions different from the first embodiment will be described. FIGS. 4A and 4B are schematic views for explaining a method for measuring the thickness of the protective tape according to the fourth embodiment of the present invention.

  First, as shown in FIG. 4A, the thickness of the protective tape 6 for grinding to be pasted on the surface of the semiconductor wafer 2 is measured by the protective tape thickness measuring device 3 in advance. At this time, the thickness of the protective tape 6 is measured inside a portion 7 corresponding to the shape of the semiconductor wafer 2 to which the protective tape 6 is to be attached. Thereafter, the protective tape 6 is cut along the outer periphery 5 of the semiconductor wafer 2 on the surface of the semiconductor wafer 2.

  Next, as shown in FIG. 4B, in the semiconductor wafer 2 on which the circuit pattern is formed, the protective tape 1 for grinding is attached to the surface of the semiconductor wafer.

  Next, the measured value of the thickness of the protective tape 1 is automatically input to the control unit of the grinding apparatus. And in this control part, the thickness which added the measured value of the thickness of the protective tape 1 to the finishing thickness after the grinding process of the semiconductor wafer 2 set beforehand is calculated. This calculated thickness is a set value of the thickness at the end of finish grinding of the semiconductor wafer 2, that is, the finished thickness. Thereafter, roughing and finishing are performed in the grinding apparatus.

  As described above, also in the fourth embodiment of the present invention, the same effect as that of the first embodiment can be obtained.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, a mechanical measuring device or a measuring device using capacitance can be used as the protective tape thickness measuring device.

(A)-(c) is a schematic diagram for demonstrating the grinding process of the semiconductor wafer which concerns on the 1st Embodiment of this invention. (A)-(c) is a schematic diagram for demonstrating the grinding process of the semiconductor wafer which concerns on the 2nd Embodiment of this invention. (A)-(c) is a schematic diagram for demonstrating the grinding process of the semiconductor wafer which concerns on the 3rd Embodiment of this invention. (A)-(c) is a schematic diagram for demonstrating the grinding process of the semiconductor wafer which concerns on the 4th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Protective tape, 2 ... Semiconductor wafer, 3, 6 ... Protective tape thickness measuring instrument, 4, 5 ... Grinding stone, 5 ... Cutting location, 7 ... Planned cutting location

Claims (11)

In a grinding machine that grinds the backside of a substrate,
A protective tape thickness measuring instrument for measuring the thickness of the protective tape attached to the surface of the substrate;
A first chuck table on which the substrate on which the thickness of the protective tape is measured by the protective tape thickness measuring instrument is placed;
A first grindstone for roughly grinding a back surface of the substrate placed on the first chuck table;
A second chuck table on which the substrate ground by the first grindstone is placed;
A second grindstone for finish grinding a back surface of the substrate placed on the second chuck table;
A grinding object thickness measuring instrument for measuring the thickness of the substrate and the protective tape placed on the second chuck table;
When finishing grinding the back surface of the substrate with the second grindstone, a control unit that controls the grinding to stop when the measured value measured by the thickness measuring instrument to be ground reaches a finished thickness setting value. When,
Comprising
The control unit calculates a thickness obtained by adding the thickness of the protective tape measured by the protective tape thickness measuring instrument to the thickness of the semiconductor wafer after grinding, which is set in advance, and calculates the calculated thickness. A grinding apparatus that is controlled to have a finished thickness set value. In a grinding device that grinds the back side of a substrate with a protective tape attached to the surface,
A first chuck table for placing the substrate;
A first grindstone for roughly grinding a back surface of the substrate placed on the first chuck table;
A protective tape thickness measuring instrument for measuring the thickness of the protective tape after being ground by the first grindstone;
A second chuck table for placing the substrate after the thickness of the protective tape is measured by the protective tape thickness measuring instrument;
A second grindstone for finish grinding a back surface of the substrate placed on the second chuck table;
A grinding object thickness measuring instrument for measuring the thickness of the substrate and the protective tape placed on the second chuck table;
When finishing grinding the back surface of the substrate with the second grindstone, a control unit that controls the grinding to stop when the measured value measured by the thickness measuring instrument to be ground reaches a finished thickness setting value. When,
Comprising
The control unit calculates a thickness obtained by adding the thickness of the protective tape measured by the protective tape thickness measuring instrument to the thickness of the semiconductor wafer after grinding, which is set in advance, and calculates the calculated thickness. A grinding apparatus that is controlled to have a finished thickness set value. In a grinding device that grinds the back side of a substrate with a protective tape attached to the surface,
A first chuck table for placing the substrate;
A first grindstone for roughly grinding a back surface of the substrate placed on the first chuck table;
A second chuck table on which the substrate ground by the first grindstone is placed;
A second grindstone for finish grinding a back surface of the substrate placed on the second chuck table;
A grinding object thickness measuring instrument for measuring the thickness of the substrate and the protective tape placed on the second chuck table;
When finishing grinding the back surface of the substrate with the second grindstone, a control unit that controls the grinding to stop when the measured value measured by the thickness measuring instrument to be ground reaches a finished thickness setting value. When,
Comprising
The control unit calculates a thickness obtained by adding a measured value of the thickness of the protective tape to a thickness of a semiconductor wafer after grinding, which is set in advance, and sets the calculated thickness as the finished thickness setting value. A grinding apparatus characterized by being controlled to the above.   4. The grinding apparatus according to claim 3, wherein the measured value of the thickness of the protective tape is a value measured before or after the protective tape is attached to the substrate outside the grinding apparatus. .   5. The grinding apparatus according to claim 1, wherein an optical measurement method using reflection of a laser beam is used when measuring the thickness of the protective tape. 6. In the grinding method for grinding the back surface of the substrate,
Measuring the thickness of the protective tape affixed to the surface of the substrate;
Rough grinding the back surface of the substrate, the thickness of the protective tape was measured;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measured value obtained by measuring the thickness of the protective tape to a preset thickness of a semiconductor wafer after grinding. In a grinding method for grinding the back surface of a substrate with a protective tape attached to the surface,
Rough grinding the back surface of the substrate;
Measuring the thickness of the protective tape;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measured value obtained by measuring the thickness of the protective tape to a preset thickness of a semiconductor wafer after grinding. In the grinding method for grinding the back surface of the substrate,
Measuring the thickness of the protective tape before being attached to the surface of the substrate;
Rough grinding the back surface of the substrate with the protective tape attached to the surface;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measured value obtained by measuring the thickness of the protective tape to a preset thickness of a semiconductor wafer after grinding. In a method for manufacturing a semiconductor device comprising a step of grinding a back surface of a substrate,
The process includes
Measuring the thickness of the protective tape affixed to the surface of the substrate;
Rough grinding the back surface of the substrate, the thickness of the protective tape was measured;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of a semiconductor wafer after grinding. In a method for manufacturing a semiconductor device comprising a step of grinding a back surface of a substrate having a protective tape attached to the front surface,
The process includes
Rough grinding the back surface of the substrate;
Measuring the thickness of the protective tape;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of a semiconductor wafer after grinding. In a method for manufacturing a semiconductor device comprising a step of grinding a back surface of a substrate,
The process includes
Measuring the thickness of the protective tape before being attached to the surface of the substrate;
Rough grinding the back surface of the substrate with the protective tape attached to the surface;
Finishing grinding the back surface of the substrate until the thickness of the substrate and the protective tape is a finished thickness setting value;
Comprising
The finished thickness setting value is a thickness obtained by adding a measurement value obtained by measuring the thickness of the protective tape to a preset thickness of a semiconductor wafer after grinding.

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