JP2010050406A - Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents poor electric optical characteristics owing to variations in an amount of supply of adhesive and a deterioration in outer shape by housing a superfluously supplied adhesive and has high yield and high reliability, and to provide a method of manufacturing the semiconductor device, and an electronic apparatus equipped with the semiconductor device. <P>SOLUTION: A semiconductor device 1 includes a semiconductor chip 10 for performing photoelectric conversion, a placing part 20 on which the semiconductor chip 10 is placed, a protruded frame 30 which is protruded in the shape of a frame on the placing part 20 on the outer periphery of the semiconductor chip 10, and a translucent protective board 40 adhered to the protruded frame 30 with an adhesive BD. The protruded frame 30 includes a first surface 31 which has a first height H1 relative to the placing part 20 and to which the translucent protective board 40 is adhered and a second surface 32 which has a second height H2 higher than the first height H1 relative to the placing part 20. A step 33 between the first surface 31 and the second surface 32 has a recess 34 formed in the surface direction of the first surface 31. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention manufactures a semiconductor device including a translucent protective plate bonded to a projecting frame portion projecting in a frame shape on the outer periphery of a placement portion on which a semiconductor chip is placed, and such a semiconductor device. The present invention relates to a semiconductor device manufacturing method and an electronic apparatus equipped with such a semiconductor device.

  2. Description of the Related Art Conventionally, a semiconductor device (an optical semiconductor device) is mounted on an electronic device having a function using light, such as an optical sensor or an optical pickup. A semiconductor package of such a semiconductor device is formed of a material such as ceramic, and includes a mounting portion on which a semiconductor chip is mounted, a translucent protective plate that transmits light, and a protruding frame portion that bonds the translucent protective plate. The semiconductor chip is sealed by the mounting portion, the projecting frame portion, and the translucent protective plate to form a so-called hollow semiconductor package.

  A conventional semiconductor device will be described with reference to FIGS. 10A to 11. A semiconductor device according to a conventional example is disclosed in Patent Document 1, for example.

  FIG. 10A is a plan view showing a planar state of a semiconductor device according to a conventional example.

  FIG. 10B is a plan view showing a planar state of the semiconductor device shown in FIG. 10A excluding the translucent protective plate.

  FIG. 10C is a bottom view illustrating a planar state of the back surface of the semiconductor device illustrated in FIG. 10A.

  10D is a cross-sectional view illustrating a cross-sectional state of the semiconductor device illustrated in FIG. 10A.

  FIG. 11 is a cross-sectional view showing an adhesive failure state of a semiconductor device according to a conventional example.

  A semiconductor device 101 according to a conventional example is provided with a semiconductor chip 110 that performs photoelectric conversion, a mounting portion 120 on which the semiconductor chip 110 is mounted, and a protruding portion in a frame shape on the mounting portion 120 on the outer periphery of the semiconductor chip 110. The protruding frame part 130 and the translucent protective plate 140 bonded to the protruding frame part 130 with an adhesive BD are provided.

  The mounting part 120, the protruding frame part 130, and the translucent protective plate 140 are so-called semiconductor packages, and the mounting part 120 and the protruding frame part 130 are made of a material such as ceramic. The translucent protective plate 140 is made of a material such as glass.

  Further, the projecting frame portion 130 includes a first surface 131 to which the translucent protective plate 140 is bonded, and a second surface 132 that is higher than the first surface 131. Note that a stepped portion 133 exists between the first surface 131 and the second surface 132.

  A wiring pattern 121 is formed in advance on the mounting portion 120, and the semiconductor chip 110 is fixed to a die bonding area of the wiring pattern 121 with a die bonding paste such as an epoxy-based adhesive. Further, the surface electrode (not shown) of the semiconductor chip 110 and the wiring pattern 121 are connected by a wire 122 formed of a gold wire or the like. Further, the wiring pattern 121 is connected to an external terminal 123 disposed on the back surface (bottom surface) of the placement unit 120 through a through hole formed in the placement unit 120.

  Since the translucent protective plate 140 is bonded to the first surface 131 via the adhesive BD, the semiconductor chip 110 and the wire 122 are sealed inside the semiconductor package.

  Adjustment of the supply amount of the adhesive BD supplied to the first surface 131 is often difficult. Generally, the adhesive BD is supplied to the projecting frame portion 130 (first surface 131: light-transmitting protective plate bonding surface) to which the light-transmitting protective plate 140 is bonded using equipment such as a dispenser. Due to variations in the air pressure of the dispenser and changes in the viscosity of the adhesive due to changes in the surrounding temperature, variations in the supply amount at each time occur.

  When an excessive amount of the adhesive BD is supplied, when the translucent protective plate 140 is placed on the adhesive BD, excess adhesive is translucent from the gap between the translucent protective plate 140 and the stepped portion 133. And the semiconductor package (the projecting frame portion 130, the second surface 132) overflow (see FIG. 11). Moreover, it may overflow to the semiconductor chip 110 side.

  When the adhesive BD overflows on the protruding frame portion 130 (first surface 131) or the upper part of the translucent protective plate 140, or overflows toward the semiconductor chip 110, the overflowing adhesive BD Adhering to the surface 131, the surface of the translucent protective plate 140, or adhering to the wire 122 or the like causes various problems.

  In other words, defects such as failure to satisfy the electro-optical characteristics, resulting in a defective product, failure to satisfy the external dimension specification, resulting in a defective product, adhesive BD adhering to a production apparatus or jig, etc., deteriorating productivity. Occurs, causing a decrease in yield and a decrease in productivity.

In addition, when the amount of the adhesive BD is too small, the adhesive does not sufficiently reach the adhesive surface between the first surface 131 and the translucent protective plate 140 and the adhesive strength is insufficient. In a reliability test such as a moisture resistance test, the package and the light transmission plate are peeled off, so that the airtightness of the semiconductor device cannot be secured and the reliability is deteriorated.
Japanese Patent No. 3838571

  The present invention has been made in view of such circumstances, and includes a semiconductor chip that performs photoelectric conversion, a mounting portion on which the semiconductor chip is mounted, and a frame-like projection on the mounting portion on the outer periphery of the semiconductor chip. A projecting frame portion and a translucent protective plate bonded to the projecting frame portion with an adhesive, wherein the projecting frame portion has a recess that accommodates an excessively supplied adhesive. Providing a semiconductor device with high yield and reliability by accommodating an excessively supplied adhesive and preventing electro-optical characteristic defects and external defects due to variations in the amount of adhesive supplied. Objective.

  Moreover, this invention is a semiconductor device manufacturing method which manufactures the semiconductor device based on this invention, Comprising: By applying the semiconductor package (projection frame part) which provided the recessed part which accommodates the adhesive agent supplied excessively, It is possible to prevent the electro-optical characteristic failure and the external shape defect due to the variation of the supplied adhesive amount, the adjustment of the adhesive supply amount is easy, the workability is improved and the yield and reliability are improved. Another object of the present invention is to provide a semiconductor device manufacturing method for manufacturing a semiconductor device with high productivity with high productivity.

  Another object of the present invention is to provide an inexpensive electronic device with a high yield, in which a highly reliable semiconductor device is mounted, by mounting the semiconductor device according to the present invention.

  A semiconductor device according to the present invention includes a semiconductor chip that performs photoelectric conversion, a mounting portion on which the semiconductor chip is mounted, and a protruding frame that protrudes in a frame shape from the mounting portion on the outer periphery of the semiconductor chip. And a translucent protective plate bonded to the projecting frame portion with an adhesive, wherein the projecting frame portion has a first height relative to the mounting portion. A first surface to which the translucent protective plate is bonded; and a second surface having a second height higher than the first height with respect to the placement portion, the first surface and the second surface. The step portion between the first portion and the second portion has a concave portion formed in the surface direction of the first surface.

  With this configuration, when the supply amount of the adhesive supplied to the first surface of the projecting frame portion varies, it is possible to store the excessively supplied adhesive in the recess, and thus supply the adhesive. It is possible to prevent a defect in electro-optical characteristics and a defect in outer shape due to variation in the amount, and to obtain a semiconductor device with high yield and reliability.

  In the semiconductor device according to the present invention, the first surface has a first groove.

  With this configuration, since it is possible to act the first groove portion of the first surface in addition to the concave portion as the region for accommodating the adhesive, the depth of the concave portion is reduced to reduce the depth of the protruding frame portion in the plane direction. The outer dimension (package size) can be reduced, and the semiconductor device can be reduced in size.

  In the semiconductor device according to the present invention, the first groove is arranged on the outer peripheral side of the end of the translucent protective plate.

  With this configuration, the adhesion area of the translucent protective plate to the first surface can be increased. Therefore, the adhesiveness of the translucent protective plate to the first surface can be improved and the reliability can be improved. .

  In the semiconductor device according to the present invention, an end portion of the translucent protective plate has a chamfered portion on a side facing the first surface.

  With this configuration, a chamfered portion can be allowed to act in addition to the concave portion as a region for accommodating the adhesive. Therefore, the depth of the concave portion is reduced and the outer peripheral dimension in the planar direction of the protruding frame portion (package size) ) Can be reduced, and the semiconductor device can be reduced in size.

  In the semiconductor device according to the present invention, an inner surface of the translucent protective plate facing the first surface has a second groove portion at a position where it is bonded to the first surface.

  With this configuration, it becomes possible to act the second groove on the inner surface in addition to the recess as a region for accommodating the adhesive, and thus the depth of the recess is reduced and the outer periphery in the planar direction of the projecting frame portion The dimensions (package size) can be reduced, and the semiconductor device can be reduced in size.

  In the semiconductor device according to the present invention, the end portion of the translucent protective plate has a third groove portion at a position facing the step portion.

  With this configuration, it is possible to cause the third groove portion at the end portion to act as a region for accommodating the adhesive in addition to the concave portion, so that the depth of the concave portion is reduced and the outer periphery in the planar direction of the projecting frame portion The dimensions (package size) can be reduced, and the semiconductor device can be reduced in size.

  In the semiconductor device according to the present invention, the first surface has a chip-side step portion on a side close to the semiconductor chip.

  With this configuration, it is possible to act on the chip side step portion in addition to the recess as a region for accommodating the adhesive. Therefore, the outer dimension in the planar direction of the projecting frame portion by reducing the depth of the recess ( The package size can be reduced, and the semiconductor device can be reduced in size.

  Further, in the semiconductor device according to the present invention, the second height is higher than a third height with respect to the mounting portion which the outer surface of the translucent protective plate has.

  With this configuration, it is possible to prevent the translucent protective plate from coming into contact with surrounding members, so that it is possible to prevent the translucent protective plate from being damaged, and a semiconductor device having a high yield can be obtained. Can do.

  The semiconductor device manufacturing method according to the present invention includes a semiconductor chip that performs photoelectric conversion, a mounting portion on which the semiconductor chip is mounted, and a frame-like protrusion on the mounting portion on the outer periphery of the semiconductor chip. A semiconductor device manufacturing method for manufacturing a semiconductor device comprising: a protruding frame portion; and a translucent protective plate bonded to the protruding frame portion with an adhesive, wherein the protruding frame portion is A first surface having a first height with respect to the portion and having the translucent protective plate adhered thereto, and a second surface having a second height higher than the first height with respect to the placement portion. A step portion between the first surface and the second surface has a recess formed in the surface direction of the first surface, and the semiconductor chip is placed on the placement portion; The method includes a step of supplying an adhesive to the first surface and a step of bonding the translucent protective plate to the adhesive.

  With this configuration, it becomes possible to prevent the electro-optical characteristic defect and the external shape defect accompanying the variation in the supply amount of the adhesive supplied to the first surface, so the adjustment of the supply amount of the adhesive becomes easy. It is possible to improve workability and manufacture a semiconductor device with high yield and reliability with high productivity.

  In the semiconductor device manufacturing method according to the present invention, the first surface has a first groove portion, and a step of placing the semiconductor chip on the mounting portion and supplying an adhesive to the first groove portion. And a step of bonding the translucent protective plate to the adhesive.

  With this configuration, it is possible to prevent a decrease in electro-optical characteristics due to variations in the amount of adhesive supplied to the first groove, and to manufacture a semiconductor device with high yield and reliability with high productivity.

  An electronic apparatus according to the present invention is an electronic apparatus having a semiconductor device mounted thereon, and the semiconductor device is the semiconductor apparatus according to the present invention.

  With this configuration, it is possible to provide a low-cost electronic device with a high yield in which a highly reliable semiconductor device is mounted.

  According to the semiconductor device of the present invention, a semiconductor chip that performs photoelectric conversion, a mounting portion on which the semiconductor chip is mounted, and a protruding frame portion that protrudes in a frame shape on the mounting portion on the outer periphery of the semiconductor chip And a translucent protective plate bonded to the projecting frame portion with an adhesive, wherein the projecting frame portion has a first height with respect to the mounting portion and has a translucent protection. A first surface to which the plate is bonded, and a second surface having a second height higher than the first height with respect to the mounting portion, and the stepped portion between the first surface and the second surface is Since it has a recess formed in the surface direction of one surface, when the supply amount of the adhesive supplied to the first surface of the projecting frame portion varies, the excessively supplied adhesive is accommodated in the recess. It is possible to prevent defective electrical and optical characteristics and outer shape due to variations in the amount of adhesive supplied, and to achieve a semiconductor device with high yield and reliability. An effect that theft can be.

  In addition, according to the semiconductor device manufacturing method of the present invention, the semiconductor chip that performs photoelectric conversion, the mounting portion on which the semiconductor chip is mounted, and the mounting portion protruding in a frame shape on the outer periphery of the semiconductor chip A semiconductor device manufacturing method for manufacturing a semiconductor device comprising a protruding frame portion and a translucent protective plate bonded to the protruding frame portion with an adhesive, wherein the protruding frame portion A first surface having a first height and having a translucent protective plate bonded thereto; and a second surface having a second height higher than the first height with respect to the mounting portion. The step portion between the two surfaces has a recess formed in the surface direction of the first surface, a step of placing the semiconductor chip on the placement portion, a step of supplying an adhesive to the first surface, A step of adhering the translucent protective plate to the adhesive, so that the electrical and optical characteristics are poor due to variations in the amount of adhesive supplied to the first surface, and the outer shape. As it possible to prevent the good, the adjustment of the supply amount of the adhesive and facilitate an effect that improves the workability becomes possible to manufacture, with good productivity, a semiconductor device with high yield and reliability.

  In addition, according to the electronic device according to the present invention, since the electronic device is equipped with a semiconductor device, and the semiconductor device is the semiconductor device according to the present invention, the yield is high with a high yield including the highly reliable semiconductor device. The effect that it becomes possible to set it as an electronic device is produced.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Embodiment 1>
Based on FIG. 1A thru | or FIG. 1D, the semiconductor device which concerns on this Embodiment is demonstrated.

  FIG. 1A is a plan view showing a planar state of the semiconductor device according to the first embodiment of the present invention.

  FIG. 1B is a plan view showing a planar state of the semiconductor device shown in FIG. 1A excluding the translucent protective plate.

  1C is a bottom view showing a planar state of the back surface of the semiconductor device shown in FIG. 1A.

  1D is a cross-sectional view illustrating a cross-sectional state of the semiconductor device illustrated in FIG. 1A.

  The semiconductor device 1 according to the present embodiment includes a semiconductor chip 10 that performs photoelectric conversion, a mounting portion 20 on which the semiconductor chip 10 is mounted, and a protruding portion in a frame shape on the mounting portion 20 on the outer periphery of the semiconductor chip 10. And the translucent protective plate 40 bonded to the protruding frame 30 with an adhesive BD.

  The mounting part 20, the protruding frame part 30, and the translucent protective plate 40 are so-called semiconductor packages, and the mounting part 20 and the protruding frame part 30 are made of a material such as ceramic, for example. Moreover, the translucent protection board 40 is formed, for example with materials, such as glass.

  Further, the projecting frame portion 30 has a first height 31 with respect to the placement portion 20 and a first surface 31 to which the translucent protective plate 40 is bonded. A second surface 32 having a second height H2 higher than the height H1, and a stepped portion 33 between the first surface 31 and the second surface 32 is a recess 34 formed in the surface direction of the first surface 31. Have

  Therefore, when the supply amount of the adhesive BD supplied to the first surface 31 for bonding the translucent protective plate 40 to the first surface 31 varies, the excessively supplied adhesive BD is accommodated in the recess 34. It becomes possible to do. That is, the adhesive BD can be prevented from overflowing from the gap between the translucent protective plate 40 and the projecting frame 30 onto the projecting frame 30, onto the translucent protective plate 40, or to the semiconductor chip 10 side. Therefore, it is possible to prevent the electro-optical characteristic defect and the external defect due to the variation in the supply amount of the adhesive BD, and to obtain the semiconductor device 1 with high yield and reliability.

  Since the first surface 31 is disposed on the semiconductor chip 10 side and the second surface 32 is disposed on the outer periphery of the first surface 31, the translucent protective plate 40 is securely bonded to the first surface 31. Is possible.

  A wiring pattern 21 is formed in advance on the mounting portion 20, and the semiconductor chip 10 is fixed to a die bonding area of the wiring pattern 21 with a die bonding paste such as an epoxy adhesive. Further, the surface electrode (not shown) of the semiconductor chip 10 and the wiring pattern 21 are connected by a wire 22 formed of, for example, a gold wire. Further, the wiring pattern 21 is connected to an external terminal 23 disposed on the back surface (bottom surface) of the placement unit 20 through a through-hole formed in the placement unit 20.

  Since the translucent protective plate 40 is adhered to the first surface 31 with the adhesive BD, the semiconductor chip 10 and the wires 22 are sealed inside the semiconductor package.

  The concave portion 34 can be formed in the same manner as a multilayer substrate manufacturing method such as ceramic. That is, the first surface 31 is divided into two layers, a layer corresponding to the recess 34 and a layer corresponding to the second surface 32, and two layers having different widths in the surface direction of the first surface 31 are laminated on the first surface 31. The recess 34 can be formed by forming the stepped portion 33.

<Embodiment 2>
Based on FIG. 2A thru | or FIG. 2C, the semiconductor device manufacturing method which manufactures the semiconductor device based on this Embodiment is demonstrated. Since the semiconductor device manufacturing method according to the present embodiment is a manufacturing method for manufacturing the semiconductor device 1 according to the first embodiment, description of the structure of the semiconductor device 1 will be omitted as appropriate.

  FIG. 2A is a cross-sectional view showing a state in which die bonding and wire bonding of a semiconductor chip are completed in the semiconductor device according to Embodiment 2 of the present invention.

  2B is a cross-sectional view illustrating a state in which an adhesive is supplied to the first surface of the protruding frame portion of the semiconductor device illustrated in FIG. 2A.

  FIG. 2C is a cross-sectional view illustrating a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device illustrated in FIG. 2A.

  The semiconductor chip 10 is fixed (die bonding) to the die bonding area of the wiring pattern 21 formed on the mounting portion 20 using, for example, a conductive paste, and the semiconductor chip 10 (surface electrode) and the wiring pattern 21 are bonded to, for example, gold. They are connected by a wire 22 such as a wire (FIG. 2A).

  Next, the adhesive BD is supplied to the first surface 31 (translucent protective plate bonding portion) of the projecting frame portion 30 using a device such as a dispenser (FIG. 2B). As the adhesive BD, for example, an ultraviolet curing type or a thermosetting type is used.

  Next, the translucent protective plate 40 having a size that can be placed on the first surface 31 (translucent protective plate bonding portion) is placed on the adhesive BD while restricting the position, and ultraviolet rays from a UV lamp or the like are placed. The translucent protective plate 40 is fixed to the first surface 31 (semiconductor package) by irradiation or heat curing by oven curing or the like. The semiconductor chip 10 and the wire 22 are sealed by a semiconductor package (the mounting portion 20, the protruding frame portion 30, and the translucent protective plate 40), and the semiconductor device 1 is completed (FIG. 2C).

  In the present embodiment, the semiconductor device manufacturing method in which the semiconductor chip 10 is assembled into the semiconductor package (the mounting unit 20 and the projecting frame unit 30) that has been separated into pieces in advance has been described. The present invention can be similarly applied to a plurality of semiconductor packages (semiconductor package aggregates) connected in series. In the multiple state, after the translucent protective plate 40 is fixed to each semiconductor package, the individual semiconductor devices 1 are formed by dividing into individual pieces by a dividing method using a substrate dividing device or a method such as dicing.

  As described above, the semiconductor device manufacturing method for manufacturing the semiconductor device 1 according to the present embodiment includes the step of mounting the semiconductor chip 10 on the mounting portion 20 and the step of supplying the adhesive BD to the first surface 31. And a step of adhering the translucent protective plate 40 to the adhesive BD.

  Accordingly, since it becomes possible to prevent the electro-optical characteristic defect and the external shape defect due to the variation in the supply amount of the adhesive BD supplied to the first surface 31, it becomes easy to adjust the supply amount of the adhesive, It becomes possible to improve the workability and manufacture the semiconductor device 1 with high yield and reliability with high productivity.

<Embodiment 3>
Based on FIG. 3A thru | or FIG. 3C, the semiconductor device which concerns on this Embodiment, and a semiconductor device manufacturing method are demonstrated. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first and second embodiments, different items will be mainly described.

  FIG. 3A is a cross-sectional view showing a state where die bonding and wire bonding of a semiconductor chip are finished in the semiconductor device according to Embodiment 3 of the present invention.

  3B is a cross-sectional view showing a state where an adhesive is supplied to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 3A.

  FIG. 3C is a cross-sectional view showing a state in which a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 3A.

  In the semiconductor device 1 according to the present embodiment, the first surface 31 has a first groove portion 31g. Accordingly, since the first groove 31g of the first surface 31 can be made to act in addition to the recess 34 as a region for accommodating the adhesive BD, the depth of the recess 34 can be reduced and the protruding frame 30 can be reduced. The outer peripheral dimension (package size) in the planar direction can be reduced, and the semiconductor device 1 can be reduced in size.

  The first groove 31g can be formed by grooving before firing or cutting after firing in a semiconductor package made of, for example, ceramic.

  By forming the first groove portion 31g, it is possible to form a space for storing an extra adhesive BD due to an excessive supply amount of the adhesive BD separately from the recess 34. Therefore, the depth (depth) of the recessed part 34 formed in the level | step-difference part 33 can be reduced by the part which increased the space which stores adhesive agent BD. That is, since the external dimensions of the semiconductor package (the mounting portion 20 and the projecting frame portion 30) can be reduced by the reduction in the depth of the concave portion 34, the size can be reduced.

  Since the semiconductor device manufacturing method is the same as that of the second embodiment, detailed description thereof is omitted. In the present embodiment, the adhesive BD is supplied in accordance with the position of the first groove 31g and is supplied in a state of filling the first groove 31g.

  That is, in the semiconductor device manufacturing method according to the present embodiment, when the adhesive BD is supplied to the first surface 31, the first groove 31g is provided on the first surface 31 in advance so as to be formed on the first groove 31g. It becomes possible to supply adhesive BD. When the translucent protective plate 40 is placed on the adhesive BD by providing the first groove 31g at an appropriate position and supplying an appropriate amount of the adhesive BD, the translucent protective plate 40 and It is possible to prevent the adhesive BD from overflowing from the gap of the projecting frame portion 30 onto the projecting frame portion 30, the translucent protective plate 40, or the semiconductor device 1 side.

  As described above, in the semiconductor device manufacturing method according to the present embodiment, the step of mounting the semiconductor chip 10 on the mounting portion 20, the step of supplying the adhesive BD to the first groove portion 31g, and the translucent protective plate And 40 for bonding the adhesive 40 to the adhesive BD.

  Accordingly, it is possible to prevent a decrease in electro-optical characteristics due to variations in the supply amount of the adhesive BD supplied to the first groove portion 31g, and to manufacture the semiconductor device 1 with high yield and reliability with high productivity. .

  Other functions and effects are the same as those in the first and second embodiments, and thus description thereof is omitted.

<Embodiment 4>
A semiconductor device and a semiconductor device manufacturing method according to the present embodiment will be described based on FIGS. 4A and 4B. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first to third embodiments, different items will be mainly described.

  FIG. 4A is a cross-sectional view showing a state where die bonding and wire bonding of a semiconductor chip are finished in the semiconductor device according to Embodiment 4 of the present invention.

  4B is a cross-sectional view showing a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 4A.

  The semiconductor device 1 according to the present embodiment is obtained by further changing the position of the first groove portion 31g according to the third embodiment.

  In the semiconductor device 1 according to the present embodiment, the first groove portion 31g is disposed on the outer peripheral side of the end portion 41 of the translucent protective plate 40. That is, the first groove portion 31 g is formed at a portion that is not directly under the translucent protective plate 40 at the end portion of the first surface 31.

  Therefore, since it becomes possible to enlarge the adhesion area with respect to the 1st surface 31 of the translucent protective plate 40, the adhesiveness with respect to the 1st surface 31 of the translucent protective plate 40 is improved, and reliability is improved. Can do.

  Other functions and effects are the same as those of the first to third embodiments, and thus description thereof is omitted.

<Embodiment 5>
The semiconductor device according to the present embodiment will be described based on FIGS. 5A and 5B. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first to fourth embodiments, different items will be mainly described.

  FIG. 5A is a cross-sectional view showing a state where an adhesive is supplied to the first surface of the projecting frame portion of the semiconductor device according to the fifth embodiment of the present invention to align the translucent protective plate.

  FIG. 5B is a cross-sectional view illustrating a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device illustrated in FIG. 5A.

  In the semiconductor device 1 according to the present embodiment, the end portion 41 of the translucent protective plate 40 has a chamfered portion 42 on the side facing the first surface 31. Therefore, since it becomes possible to make the chamfered portion 42 act in addition to the concave portion 34 as a region for accommodating the adhesive BD, the outer peripheral dimension in the planar direction of the projecting frame portion 30 is reduced by reducing the depth of the concave portion 34. (Package size) can be reduced, and the semiconductor device 1 can be reduced in size.

  Other functions and effects are the same as those in the first and second embodiments, and thus description thereof is omitted.

<Embodiment 6>
A semiconductor device according to the present embodiment will be described with reference to FIGS. 6A and 6B. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first to fifth embodiments, different items will be mainly described.

  FIG. 6A is a cross-sectional view showing a state where an adhesive is supplied to the first surface of the projecting frame portion of the semiconductor device according to the sixth embodiment of the present invention to align the translucent protective plate.

  6B is a cross-sectional view showing a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 6A.

  In the semiconductor device 1 according to the present embodiment, the inner side surface 43 of the translucent protective plate 40 facing the first surface 31 has a second groove portion 43 g at a position where it is bonded to the first surface 31. Accordingly, since the second groove 43g of the inner surface 43 can be made to act in addition to the recess 34 as a region for accommodating the adhesive BD, the depth of the recess 34 is reduced and the plane of the projecting frame 30 is reduced. It is possible to reduce the outer peripheral dimension (package size) in the direction, and the semiconductor device 1 can be miniaturized.

  Other functions and effects are the same as those in the first and second embodiments, and thus description thereof is omitted.

<Embodiment 7>
Based on FIGS. 7A and 7B, the semiconductor device according to the present embodiment will be described. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first to sixth embodiments, different items will be mainly described.

  FIG. 7A is a cross-sectional view showing a state where an adhesive is supplied to the first surface of the projecting frame portion of the semiconductor device according to the seventh embodiment of the present invention to align the translucent protective plate.

  FIG. 7B is a cross-sectional view showing a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 7A.

  In the semiconductor device 1 according to the present embodiment, the end portion 41 (end surface 41) of the translucent protective plate 40 has a third groove portion 41g at a position facing the step portion 33. Accordingly, since the third groove 41g of the end 41 can be made to act in addition to the recess 34 as a region for accommodating the adhesive BD, the depth of the recess 34 can be reduced and the plane of the projecting frame 30 can be reduced. It is possible to reduce the outer peripheral dimension (package size) in the direction, and the semiconductor device 1 can be miniaturized.

  Moreover, since the 1st surface 31 and the translucent protection board 40 can take the mutual adhesion area large, the adhesiveness of a semiconductor package (projection frame part 30) and the translucent protection board 40 improves.

  Other functions and effects are the same as those in the first and second embodiments, and thus description thereof is omitted.

<Eighth embodiment>
Based on FIG. 8A and FIG. 8B, the semiconductor device according to the present embodiment will be described. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first to seventh embodiments, different items will be mainly described.

  FIG. 8A is a cross-sectional view showing a state where die bonding and wire bonding of a semiconductor chip are finished in the semiconductor device according to Embodiment 8 of the present invention.

  FIG. 8B is a cross-sectional view showing a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 8A.

  In the semiconductor device 1 according to the present embodiment, the first surface 31 has a chip-side step portion 31 s on the side close to the semiconductor chip 10. Accordingly, since it is possible to act the chip side step portion 31s as the region for accommodating the adhesive BD in addition to the concave portion 34, the depth of the concave portion 34 is reduced and the projecting frame portion 30 in the planar direction is reduced. The outer peripheral dimension (package size) can be reduced, and the semiconductor device 1 can be reduced in size.

  The chip-side step portion 31s can be formed in the same manner as a multilayer substrate manufacturing method such as ceramic. That is, the first surface 31 is divided into two layers, a layer corresponding to the chip-side step portion 31 s and a layer corresponding to the first surface 31, and two layers having different widths in the surface direction of the first surface 31. The chip-side step portion 31s can be formed by stacking correspondingly. In addition, for example, a semiconductor package made of ceramic or the like can be formed by grooving before firing or cutting after firing.

  When the translucent protective plate 40 is placed on the adhesive BD, the adhesive BD overflowing from the first surface 31 to the semiconductor chip 10 side can be accumulated in the chip-side step portion 31s, so that the wire 22, The influence of the adhesive BD on the wiring pattern 21 and the semiconductor chip 10 can be prevented.

  When the adhesive BD flows into the semiconductor chip 10 side, a quality defect occurs due to adhesion to the semiconductor chip 10, the wire 22, and the wiring pattern 21, but in this embodiment, such a problem is prevented. It becomes possible to improve the yield.

  Other functions and effects are the same as those in the first and second embodiments, and thus description thereof is omitted. Note that this embodiment can be applied to other embodiments as they are.

<Embodiment 9>
The semiconductor device according to the present embodiment will be described with reference to FIG. Since the basic configuration of the semiconductor device 1 and the basic configuration of the semiconductor device manufacturing method are the same as those in the first to eighth embodiments, different items will be mainly described.

  FIG. 9 is a cross-sectional view showing a state in which a translucent protective plate is bonded to the first surface of the projecting frame portion of the semiconductor device according to the ninth embodiment of the present invention.

  In the semiconductor device 1 according to the present embodiment, unlike the case of the first to eighth embodiments, the second height H2 of the second surface 32 with respect to the mounting portion 20 is the translucent protective plate. The configuration is higher than the third height H3 with respect to the mounting portion 20 of the outer surface 44 of the forty.

  Accordingly, it is possible to prevent the translucent protective plate 40 from coming into contact with surrounding members, so that it is possible to prevent the translucent protective plate 40 from being damaged, and the semiconductor device 1 having a high yield can be obtained. be able to.

  In the electro-optical performance inspection process after the translucent protective plate 40 is bonded to complete the semiconductor package, the packaging process at the time of shipment, etc., the top surface of the semiconductor package is attached to a processing device, jig, or packaging material. May come into contact. When the height of the translucent protective plate 40 (third height H3) is larger than the height of the second surface 32 (second height H2) as in the first to eighth embodiments, that is, In the case where the optical protective plate 40 protrudes from the semiconductor package (projecting frame portion 30), the transparent protective plate 40 may come into direct contact with the processing apparatus, jig, packaging material, etc. In some cases, defects such as scratches, chips and cracks occur in the protective plate 40 and the yield is reduced.

  However, the semiconductor device 1 according to the present embodiment has a structure in which the outer side surface 44 of the translucent protective plate 40 is hidden from the top surface of the semiconductor package (second surface 32). Therefore, since the translucent protective plate 40 does not come into direct contact with the processing apparatus, jig, or packaging material, it is possible to prevent the translucent protective plate 40 from being scratched, chipped or cracked. It becomes possible to improve the yield.

  Other functions and effects are the same as those in the first and second embodiments, and thus description thereof is omitted. Note that this embodiment can be applied to other embodiments as they are.

<Embodiment 10>
An electronic device (not shown) according to the present embodiment is an electronic device on which the semiconductor device 1 is mounted, and the semiconductor device 1 is the semiconductor device described in any one of the first to ninth embodiments. 1. Therefore, it is possible to obtain an inexpensive electronic device with a high yield, on which the highly reliable semiconductor device 1 is mounted.

It is a top view which shows the planar state of the semiconductor device which concerns on Embodiment 1 of this invention. It is a top view which shows the planar state except the translucent protection board of the semiconductor device shown to FIG. 1A. FIG. 1B is a bottom view showing a planar state of the back surface of the semiconductor device shown in FIG. 1A. FIG. 1B is a cross-sectional view showing a cross-sectional state of the semiconductor device shown in FIG. 1A. It is sectional drawing which shows the state which complete | finished die bonding and wire bonding of the semiconductor chip with the semiconductor device which concerns on Embodiment 2 of this invention. It is sectional drawing which shows the state which supplied the adhesive agent to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 2A. It is sectional drawing which shows the state which bonded the translucent protective board to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 2A. It is sectional drawing which shows the state which complete | finished die bonding and wire bonding of the semiconductor chip with the semiconductor device which concerns on Embodiment 3 of this invention. It is sectional drawing which shows the state which supplied the adhesive agent to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 3A. It is sectional drawing which shows the state which adhered the translucent protection board to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 3A. It is sectional drawing which shows the state which complete | finished die bonding and wire bonding of the semiconductor chip with the semiconductor device which concerns on Embodiment 4 of this invention. FIG. 4B is a cross-sectional view showing a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 4A. It is sectional drawing which shows the state which supplied the adhesive agent to the 1st surface of the protrusion frame part of the semiconductor device which concerns on Embodiment 5 of this invention, and aligned the translucent protective plate. It is sectional drawing which shows the state which adhered the translucent protective board to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 5A. It is sectional drawing which shows the state which supplied the adhesive agent to the 1st surface of the protrusion frame part of the semiconductor device which concerns on Embodiment 6 of this invention, and aligned the translucent protective plate. FIG. 6B is a cross-sectional view showing a state where a translucent protective plate is bonded to the first surface of the protruding frame portion of the semiconductor device shown in FIG. 6A. It is sectional drawing which shows the state which supplied the adhesive agent to the 1st surface of the protrusion frame part of the semiconductor device which concerns on Embodiment 7 of this invention, and aligned the translucent protective plate. It is sectional drawing which shows the state which adhered the translucent protective board to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 7A. It is sectional drawing which shows the state which complete | finished die bonding and wire bonding of the semiconductor chip with the semiconductor device which concerns on Embodiment 8 of this invention. It is sectional drawing which shows the state which bonded the translucent protective board to the 1st surface of the protrusion frame part of the semiconductor device shown to FIG. 8A. It is sectional drawing which shows the state which adhered the translucent protection board to the 1st surface of the protrusion frame part of the semiconductor device which concerns on Embodiment 9 of this invention. It is a top view which shows the planar state of the semiconductor device which concerns on a prior art example. It is a top view which shows the planar state except the translucent protection board of the semiconductor device shown to FIG. 10A. FIG. 10B is a bottom view showing a planar state of the back surface of the semiconductor device shown in FIG. 10A. FIG. 10B is a cross-sectional view showing a cross-sectional state of the semiconductor device shown in FIG. 10A. It is sectional drawing which shows the adhesive malfunction state of the semiconductor device which concerns on a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Semiconductor chip 20 Mounting part 21 Wiring pattern 22 Wire 23 External terminal 30 Projection frame part 31 1st surface 31g 1st groove part 31s Chip side step part 32 2nd surface 33 Step part 34 Concave part 40 Translucent protection Plate 41 End portion 41g Third groove portion 42 Chamfered portion 43 Inner side surface 43g Second groove portion 44 Outer side surface BD Adhesive H1 First height H2 Second height H3 Third height

Claims (11)

A semiconductor chip for performing photoelectric conversion, a mounting portion on which the semiconductor chip is mounted, a protruding frame portion protruding in a frame shape from the mounting portion on the outer periphery of the semiconductor chip, and the protruding frame portion A translucent protective plate bonded with an adhesive to a semiconductor device,
The protruding frame portion has a first height with respect to the mounting portion, a first surface to which the translucent protective plate is bonded, and a height higher than the first height with respect to the mounting portion. A second surface having two heights,
The step portion between the first surface and the second surface has a recess formed in the surface direction of the first surface. The semiconductor device according to claim 1,
The semiconductor device, wherein the first surface has a first groove. The semiconductor device according to claim 2,
The semiconductor device according to claim 1, wherein the first groove portion is disposed on an outer peripheral side of an end portion of the translucent protective plate. The semiconductor device according to claim 1,
The end portion of the translucent protective plate has a chamfered portion on the side facing the first surface. The semiconductor device according to claim 1,
The semiconductor device according to claim 1, wherein an inner side surface of the translucent protective plate facing the first surface has a second groove portion at a position bonded to the first surface. The semiconductor device according to claim 1,
An end portion of the translucent protective plate has a third groove portion at a position facing the step portion. A semiconductor device according to any one of claims 1 to 6,
The semiconductor device according to claim 1, wherein the first surface has a chip side step portion on a side close to the semiconductor chip. A semiconductor device according to any one of claims 1 to 7,
Said 2nd height is higher than 3rd height with respect to the said mounting part which the outer surface of the said translucent protective board has. The semiconductor device characterized by these. A semiconductor device manufacturing method for manufacturing the semiconductor device according to claim 1,
Placing the semiconductor chip on the mounting portion;
Supplying an adhesive to the first surface;
A step of adhering the translucent protective plate to the adhesive. A semiconductor device manufacturing method for manufacturing the semiconductor device according to claim 2,
Placing the semiconductor chip on the mounting portion;
Supplying an adhesive to the first groove,
A step of adhering the translucent protective plate to the adhesive. An electronic device equipped with a semiconductor device,
The electronic device according to claim 1, wherein the semiconductor device is the semiconductor device according to claim 1.

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