JP2010037585A - Copper foil and copper foil manufacturing method - Google Patents

Copper foil and copper foil manufacturing method Download PDF

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JP2010037585A
JP2010037585A JP2008200073A JP2008200073A JP2010037585A JP 2010037585 A JP2010037585 A JP 2010037585A JP 2008200073 A JP2008200073 A JP 2008200073A JP 2008200073 A JP2008200073 A JP 2008200073A JP 2010037585 A JP2010037585 A JP 2010037585A
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copper foil
copper
recess
plating layer
copper plating
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JP5351461B2 (en
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Toshio Hashiba
登志雄 端場
Yuko Matsumoto
雄行 松本
Kenji Yokomizo
健治 横溝
Chizuru Goto
千鶴 後藤
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide copper foil capable of securing adhesiveness to a resin base material or the like and a method of manufacturing the copper foil. <P>SOLUTION: The copper foil 1 is provided with a copper foil material 10 having a first recessed part 15 on one surface and a copper plated layer 20 provided on one surface to have a second recessed part 25 having average depth narrower than that of the first recessed part 15 at a position corresponding to the first recessed part 15. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、銅箔及び銅箔製造方法に関する。特に、本発明は、プリント基板等に用いる銅箔及び銅箔製造方法に関する。   The present invention relates to a copper foil and a copper foil manufacturing method. In particular, the present invention relates to a copper foil used for a printed circuit board and the like, and a copper foil manufacturing method.

銅膜を形成した樹脂基材は、Copper Clad Laminate(CCL)と呼ばれる。そして、フレキシブルプリント基板(FPC)用のCCLとして、接着剤を介して銅箔と樹脂基材とを貼り合わせる3層CCL、及び接着剤を介さずに銅箔と樹脂基材とを貼り合わせる2層CCL等が知られている。CCLに用いられる銅箔は、樹脂基材に対する密着性を向上させることを目的として、銅箔表面に粗化処理が施される。   The resin base material on which the copper film is formed is called Copper Clad Laminate (CCL). And as CCL for flexible printed circuit boards (FPC), 3 layers CCL which bonds a copper foil and a resin base material through an adhesive, and 2 which bonds a copper foil and a resin base material without using an adhesive Layer CCL and the like are known. The copper foil used for CCL is subjected to a roughening treatment on the surface of the copper foil for the purpose of improving the adhesion to the resin substrate.

従来、凹凸を有する圧延銅箔の表面に、銅めっき層が設けられているプリント配線板用圧延銅箔が知られている(例えば、特許文献1参照)。特許文献1に記載のプリント配線板用圧延銅箔は、圧延銅箔表面の凹凸を銅めっきにより消失させるので、粗化処理において電流が局部的に集中することがなく、いわゆる粗化コブが圧延銅箔表面に均一に形成される。これにより、特許文献1に記載のプリント配線板用圧延銅箔によれば、圧延銅箔の表面上に形成する粗化コブのばらつきを小さくすることができる。   Conventionally, the rolled copper foil for printed wiring boards with which the copper plating layer is provided in the surface of the rolled copper foil which has an unevenness | corrugation is known (for example, refer patent document 1). The rolled copper foil for printed wiring board described in Patent Document 1 eliminates unevenness on the surface of the rolled copper foil by copper plating, so that current does not concentrate locally in the roughening treatment, so-called roughened bumps are rolled. It is uniformly formed on the copper foil surface. Thereby, according to the rolled copper foil for printed wiring boards of patent document 1, the dispersion | variation in the roughening bump formed on the surface of a rolled copper foil can be made small.

特開2005−340635号公報JP 2005-340635 A

しかし、特許文献1に記載のプリント配線板用圧延銅箔は、圧延銅箔表面の凹凸を銅めっきにより消失させているので、圧延銅箔の表面粗さが小さくなり、圧延銅箔と樹脂基材との密着性が低下する場合がある。また、圧延銅箔に粗化処理を施すと、圧延銅箔表面の凹部にめっき層が形成されないクレータと呼ばれる欠陥が発生する場合がある。クレータのサイズが大きくなると、圧延銅箔への樹脂基材の貼り付け時、及び/又は塗布時に圧延銅箔と樹脂基材との間に気泡が残存する場合がある。   However, since the rolled copper foil for printed wiring boards described in Patent Document 1 has the unevenness on the surface of the rolled copper foil disappeared by copper plating, the surface roughness of the rolled copper foil is reduced, and the rolled copper foil and the resin base are reduced. Adhesion with the material may be reduced. Moreover, when a roughening process is given to rolled copper foil, the defect called a crater by which a plating layer is not formed in the recessed part of the rolled copper foil surface may generate | occur | produce. When the size of the crater is increased, air bubbles may remain between the rolled copper foil and the resin base material when the resin base material is attached to the rolled copper foil and / or applied.

したがって、本発明の目的は、樹脂基材等への密着性を確保できる銅箔及び銅箔製造方法を提供することにある。   Therefore, the objective of this invention is providing the copper foil and copper foil manufacturing method which can ensure the adhesiveness to the resin base material etc.

本発明は、上記目的を達成するため、一方の表面に第1の凹部を有する銅箔材と、第1の凹部の深さの平均値より小さい深さの平均値を有する第2の凹部を、第1の凹部に対応する位置に有して一方の表面上に設けられる銅めっき層とを備える銅箔が提供される。   In order to achieve the above object, the present invention provides a copper foil material having a first recess on one surface and a second recess having an average depth smaller than the average depth of the first recess. And a copper foil provided with a copper plating layer provided on one surface at a position corresponding to the first recess.

また、上記銅箔は、銅箔材は、電解銅箔又は圧延銅箔であってもよい。また、第1の凹部は、銅箔材の表面に対して第1の傾斜角度を有する第1の斜面を含み、第2の凹部は、銅箔材の表面に対して第2の傾斜角度を有する第2の斜面を含み、第2の傾斜角度の平均値は、第1の傾斜角度の平均値より小さくてもよい。また、第2の傾斜角度の平均値は、1度以上10度以下であってもよい。   Moreover, the copper foil may be an electrolytic copper foil or a rolled copper foil. The first recess includes a first slope having a first tilt angle with respect to the surface of the copper foil material, and the second recess has a second tilt angle with respect to the surface of the copper foil material. The average value of the second inclination angle may be smaller than the average value of the first inclination angle. Further, the average value of the second inclination angle may be not less than 1 degree and not more than 10 degrees.

また、上記銅箔は、第2の凹部の深さの平均値は、0.1μm以上0.7μm以下であってもよく、銅めっき層は、0.1μm以上1μm以下の厚さを有していてもよい。また、銅めっき層上に設けられる粗化処理層を更に備え、粗化処理層は、複数の構造物を含み、一方の表面に略水平な銅めっき層の表面と、少なくとも一部の第2の凹部の表面とに形成されてもよい。そして、粗化処理層は、銅又は銅合金から形成され、0.5μm以上3μm以下の表面粗さ(Rz)を有していてもよい。   The copper foil may have an average depth of the second recesses of 0.1 μm to 0.7 μm, and the copper plating layer has a thickness of 0.1 μm to 1 μm. It may be. Moreover, the roughening process layer provided on a copper plating layer is further provided, and the roughening process layer contains a some structure, the surface of the copper plating layer substantially horizontal on one surface, and at least one part 2nd. It may be formed on the surface of the recess. And the roughening process layer is formed from copper or a copper alloy, and may have surface roughness (Rz) of 0.5 micrometer or more and 3 micrometers or less.

また、本発明は、上記目的を達するため、銅箔材を準備する銅箔材準備工程と、銅箔材の表面に、限界電流密度未満の電流密度で銅めっき層を形成する銅めっき工程とを備える銅箔製造方法が提供される。   In order to achieve the above object, the present invention provides a copper foil material preparation step for preparing a copper foil material, and a copper plating step for forming a copper plating layer on the surface of the copper foil material with a current density less than the limit current density, and A copper foil manufacturing method is provided.

また、上記銅箔製造方法は、銅箔材準備工程は、一方の表面に第1の凹部を有する銅箔材を準備し、銅めっき工程は、第1の凹部の深さの平均値より小さい深さの平均値を有する第2の凹部を、第1の凹部に対応する位置に有する銅めっき層を形成してもよい。銅めっき層の表面に粗化処理層を形成する粗化処理工程を更に備え、粗化処理工程は、限界電流密度以上の電流密度で電解処理する第1処理工程と、第1処理工程後、限界電流密度未満の電流密度でめっき処理する第2処理工程とを含んでもよい。   Moreover, the said copper foil manufacturing method prepares the copper foil material which has a 1st recessed part in one surface, and a copper plating process is smaller than the average value of the depth of a 1st recessed part. You may form the copper plating layer which has the 2nd recessed part which has the average value of depth in the position corresponding to a 1st recessed part. Further comprising a roughening treatment step of forming a roughening treatment layer on the surface of the copper plating layer, the roughening treatment step is a first treatment step of electrolytic treatment at a current density equal to or higher than a limit current density, and after the first treatment step, And a second treatment step in which plating is performed at a current density less than the limit current density.

また、上記銅箔製造方法は、銅めっき工程は、5A/dm以上30A/dm未満の電流密度で銅めっき層を形成してもよい。銅めっき工程は、メルカプト基を有する有機硫黄化合物、界面活性剤、及び塩化物イオンを含むめっき液を用いて銅めっき層を形成してもよい。 Moreover, as for the said copper foil manufacturing method, a copper plating process may form a copper plating layer with the current density of 5 A / dm < 2 > or more and less than 30 A / dm < 2 >. In the copper plating step, a copper plating layer may be formed using a plating solution containing an organic sulfur compound having a mercapto group, a surfactant, and chloride ions.

また、本発明は、上記目的を達するため、一方の表面に第1の凹部を有する銅箔材と、第1の凹部に対応する位置に第2の凹部を有して一方の表面上に設けられる銅めっき層とを備え、第1の凹部は、銅箔材の表面に対して第1の傾斜角度を有する第1の斜面を含み、第2の凹部は、銅箔材の表面に対して第2の傾斜角度を有する第2の斜面を含み、第2の傾斜角度の平均値は、第1の傾斜角度の平均値より小さい銅箔が提供される。   In order to achieve the above object, the present invention provides a copper foil material having a first recess on one surface and a second recess on a surface corresponding to the first recess. And a first recessed portion includes a first slope having a first inclination angle with respect to the surface of the copper foil material, and the second recessed portion is directed to the surface of the copper foil material. A copper foil is provided that includes a second slope having a second slope angle, the average value of the second slope angles being less than the average value of the first slope angles.

また、上記銅箔は、銅めっき層は、0.1μm以上1μm以下の厚さを有していてもよい。   Moreover, as for the said copper foil, the copper plating layer may have thickness of 0.1 micrometer or more and 1 micrometer or less.

また、本発明は、上記目的を達するため、一方の表面に第1の凹部を有する銅箔材と、第1の凹部の深さの平均値より小さい深さの平均値を有する第2の凹部を、第1の凹部に対応する位置に有して一方の表面上に設けられ、0.1μm以上1μm以下の厚さを有する銅めっき層とを備える銅箔が提供される。   In order to achieve the above object, the present invention provides a copper foil material having a first recess on one surface and a second recess having an average depth smaller than the average depth of the first recess. Is provided on one surface at a position corresponding to the first recess, and a copper foil provided with a copper plating layer having a thickness of 0.1 μm or more and 1 μm or less is provided.

本発明に係る銅箔及び銅箔製造方法によれば、樹脂基材等への密着性を確保できる銅箔及び銅箔製造方法を提供できる。   According to the copper foil and the copper foil manufacturing method according to the present invention, it is possible to provide a copper foil and a copper foil manufacturing method capable of ensuring adhesion to a resin substrate or the like.

[実施の形態]
図1は、本発明の実施の形態に係る銅箔の断面の概要を示す。
[Embodiment]
FIG. 1 shows an outline of a cross section of a copper foil according to an embodiment of the present invention.

(銅箔1の構造)
本実施の形態に係る銅箔1は、一方の表面に第1の凹部15を有する銅箔材10と、一方の表面を覆って設けられ、第1の凹部15に対応する位置に第2の凹部25を有する銅めっき層20と、銅めっき層20の表面に形成される粗化処理層30とを備える。すなわち、銅箔1は、銅箔材10と銅めっき層20と粗化処理層30とを含んで形成される積層構造を備える。なお、図示しないが、粗化処理層30上に、所定の樹脂基材に対する銅箔1の密着性を更に向上させることを目的として、ニッケル−コバルト合金めっき層、亜鉛めっき層、クロメート処理層、及びシランカップリング処理層を形成することができる。
(Structure of copper foil 1)
The copper foil 1 according to the present embodiment is provided so as to cover the copper foil material 10 having the first recess 15 on one surface and the one surface, and the second position at a position corresponding to the first recess 15. The copper plating layer 20 which has the recessed part 25, and the roughening process layer 30 formed in the surface of the copper plating layer 20 are provided. That is, the copper foil 1 has a laminated structure formed including the copper foil material 10, the copper plating layer 20, and the roughening treatment layer 30. Although not shown, a nickel-cobalt alloy plating layer, a zinc plating layer, a chromate treatment layer, a roughening treatment layer 30 for the purpose of further improving the adhesion of the copper foil 1 to a predetermined resin base material, And a silane coupling process layer can be formed.

銅箔材10は、所定の厚さを有すると共に、銅を含んで形成される。また、銅箔材10は、一方の表面に複数の第1の凹部15を有する。複数の第1の凹部15はそれぞれ、銅箔材10の表面10aに対して第1の傾斜角度としての所定の角度を有して形成される斜面15aを含む。なお、本実施の形態において、複数の斜面15aの表面10aに対する角度の平均値をθaと表わす。また、複数の第1の凹部15のそれぞれは所定の深さを有しており、本実施の形態において、複数の第1の凹部15の深さの平均値をDaと表わす。   The copper foil material 10 has a predetermined thickness and is formed including copper. Further, the copper foil material 10 has a plurality of first recesses 15 on one surface. Each of the plurality of first recesses 15 includes an inclined surface 15a formed with a predetermined angle as a first inclination angle with respect to the surface 10a of the copper foil material 10. In the present embodiment, the average value of the angles of the plurality of inclined surfaces 15a with respect to the surface 10a is represented by θa. Each of the plurality of first recesses 15 has a predetermined depth, and in this embodiment, the average value of the depths of the plurality of first recesses 15 is represented by Da.

また、銅箔材10は、電解銅箔又は圧延銅箔から形成される。本実施の形態に係る銅箔1を形成する場合において、銅箔材10の表面の平坦性を確保すると共に、銅箔1に優れた折り曲げ性を付与することを目的とする場合、銅箔材10を圧延銅箔から形成することができる。また、銅箔材10は、純銅、又は銅合金材料から形成することもできる。なお、本実施の形態において、銅箔材10を純銅から形成する場合に、純銅に不可避的に含まれる不純物は排除されない。   Moreover, the copper foil material 10 is formed from an electrolytic copper foil or a rolled copper foil. In the case of forming the copper foil 1 according to the present embodiment, when the purpose is to ensure the flatness of the surface of the copper foil material 10 and to impart excellent bendability to the copper foil 1, the copper foil material 10 can be formed from rolled copper foil. Moreover, the copper foil material 10 can also be formed from pure copper or a copper alloy material. In the present embodiment, when the copper foil material 10 is formed from pure copper, impurities inevitably contained in the pure copper are not excluded.

銅めっき層20は、銅箔材10の一方の表面上に、複数の第1の凹部15のそれぞれを埋めて形成される。そして、銅めっき層20は、複数の第1の凹部15のそれぞれに対応する位置、すなわち、複数の第1の凹部15のそれぞれの上方に第2の凹部25をそれぞれ有する。複数の第2の凹部25はそれぞれ、銅箔材10の表面10a(又は、銅めっき層20の表面20a)に対して第2の傾斜角度としての所定の角度を有して形成される斜面25aを含む。   The copper plating layer 20 is formed on one surface of the copper foil material 10 by filling each of the plurality of first recesses 15. The copper plating layer 20 has second recesses 25 at positions corresponding to the plurality of first recesses 15, that is, above the plurality of first recesses 15, respectively. Each of the plurality of second recesses 25 is formed with a predetermined angle as a second inclination angle with respect to the surface 10a of the copper foil material 10 (or the surface 20a of the copper plating layer 20). including.

本実施の形態において、複数の斜面25aの表面10aに対する角度の平均値をθbと表わす。また、第2の凹部25は、対応する第1の凹部15の深さより浅い深さを有して形成される。そして、本実施の形態においては、θaとθbとの関係は、θa>θbとなり、DaとDbとの関係は、Da>Dbとなる。そして、本実施の形態においては、θbの値は、実施可能な範囲に設定すると共に、クレータの発生を抑制しやすい範囲に設定される。例えば、θbは、1度以上10度以下の範囲であることが好ましい。また、複数の第2の凹部25のそれぞれは所定の深さを有しており、本実施の形態において複数の第2の凹部25の深さの平均値をDbと表わす。そして、本実施の形態においては、Dbは、0.1μm以上0.7μm以下であることが好ましい。   In the present embodiment, an average value of angles with respect to the surface 10a of the plurality of inclined surfaces 25a is represented as θb. The second recess 25 is formed with a depth shallower than the depth of the corresponding first recess 15. In this embodiment, the relationship between θa and θb is θa> θb, and the relationship between Da and Db is Da> Db. And in this Embodiment, while setting the value of (theta) b to the range which can be implemented, it sets to the range which is easy to suppress generation | occurrence | production of a crater. For example, θb is preferably in the range of 1 to 10 degrees. Each of the plurality of second recesses 25 has a predetermined depth, and the average value of the depths of the plurality of second recesses 25 is represented as Db in the present embodiment. And in this Embodiment, it is preferable that Db is 0.1 micrometer or more and 0.7 micrometer or less.

なお、銅めっき層20は、少なくとも一部の第2の凹部25が有意な深さとなる厚さを有して銅箔材10上に形成される。例えば、銅めっき層20は、銅箔材10上に0.1μm以上1μm以下の厚さを有して形成されることが好ましい。   The copper plating layer 20 is formed on the copper foil material 10 so that at least a part of the second recesses 25 has a significant depth. For example, the copper plating layer 20 is preferably formed on the copper foil material 10 with a thickness of 0.1 μm or more and 1 μm or less.

粗化処理層30は、複数の構造物35が銅めっき層20の表面20aに形成されることにより、銅めっき層20上に設けられる。複数の構造物35は、銅箔材10の一方の表面に略水平な銅めっき層20の表面と、少なくとも一部の第2の凹部25の表面(すなわち、第2の凹部25の斜面25aの表面)とに形成される。また、構造物35は、表面20aと斜面25aとの境目上に形成されてもよい。複数の構造物35はそれぞれ、めっき処理により銅を含んで形成される。そして、複数の構造物35はそれぞれ、コブ形状を有して形成される。そして、本実施の形態に係る粗化処理層30は、樹脂との密着性を確保することができる0.5μm以上の表面粗さ(Rz)を有すると共に、樹脂との貼り合わせ時にボイドの発生を抑制できる3μm以下の表面粗さ(Rz)を有する。なお、本実施の形態に係る粗化処理層30は、複数の構造物35それぞれの先端を結んだ仮想的な線を考えると、当該線が、有意の凹凸形状を有することとなる。   The roughening treatment layer 30 is provided on the copper plating layer 20 by forming a plurality of structures 35 on the surface 20 a of the copper plating layer 20. The plurality of structures 35 include a surface of the copper plating layer 20 that is substantially horizontal to one surface of the copper foil material 10 and a surface of at least a portion of the second recess 25 (that is, the slope 25a of the second recess 25). Surface). The structure 35 may be formed on the boundary between the surface 20a and the inclined surface 25a. Each of the plurality of structures 35 is formed including copper by plating. The plurality of structures 35 are each formed with a bump shape. And the roughening process layer 30 which concerns on this Embodiment has a surface roughness (Rz) of 0.5 micrometer or more which can ensure adhesiveness with resin, and generation | occurrence | production of a void at the time of bonding with resin. Has a surface roughness (Rz) of 3 μm or less. In addition, when the roughening process layer 30 which concerns on this Embodiment considers the virtual line | wire which connected each front-end | tip of the some structure 35, the said line will have a significant uneven | corrugated shape.

(第1の凹部15及び第2の凹部25の詳細)
図2は、本発明の実施の形態に係る第1の凹部及び第2の凹部の深さの評価の概要を示す。
(Details of first recess 15 and second recess 25)
FIG. 2 shows an outline of evaluation of the depths of the first recess and the second recess according to the embodiment of the present invention.

銅箔材10が有する第1の凹部15の深さは、銅箔材10の表面10aから第1の凹部15の底部までの距離で表わされる。例えば、図2において一の第1の凹部15の深さは、Da1で表わされ、一の第1の凹部15に隣接する他の第1の凹部15の深さは、Da2で表わされる。同様にして、銅めっき層20が有する第2の凹部25の深さは、銅めっき層20の表面20aから第2の凹部25の底部までの距離で表わされる。例えば、一の第2の凹部25の深さは、Db1で表わされ、一の第2の凹部25に隣接する他の第2の凹部25の深さは、Db2で表わされる。なお、複数の第1の凹部15の深さの平均値Da及び複数の第2の凹部25の深さの平均値Dbはそれぞれ、所定数の各凹部の深さを測定して、その算術平均を算出することにより求めることができる。 The depth of the first recess 15 included in the copper foil material 10 is represented by the distance from the surface 10 a of the copper foil material 10 to the bottom of the first recess 15. For example, in FIG. 2, the depth of one first recess 15 is represented by D a1 , and the depth of another first recess 15 adjacent to one first recess 15 is represented by D a2 . It is. Similarly, the depth of the second recess 25 included in the copper plating layer 20 is represented by the distance from the surface 20 a of the copper plating layer 20 to the bottom of the second recess 25. For example, the depth of one second recess 25 is represented by D b1 , and the depth of another second recess 25 adjacent to one second recess 25 is represented by D b2 . The average value Da of the depths of the plurality of first recesses 15 and the average value Db of the depths of the plurality of second recesses 25 are respectively measured by measuring the depths of a predetermined number of each recess, and the arithmetic average thereof. Can be obtained by calculating.

図3は、本発明の実施の形態に係る第1の凹部の斜面及び第2の凹部の斜面の傾斜の評価の概要を示す。   FIG. 3 shows an outline of the evaluation of the slopes of the slopes of the first recess and the second recess according to the embodiment of the present invention.

銅箔材10が有する第1の凹部15の斜面15aの表面10aに対する傾斜は、角度θa1で表わされる。例えば、図3において一の第1の凹部15の斜面15aの傾斜は、θa1で表わされ、一の第1の凹部15に隣接する他の第1の凹部15の斜面15aの傾斜は、θa2で表わされる。同様にして、銅めっき層20が有する第2の凹部25の斜面25aの傾斜は、θb1で表わされる。例えば、一の第2の凹部25の斜面25aの傾斜は、θb1で表わされ、一の第2の凹部25に隣接する他の第2の凹部25の斜面25aの傾斜は、θb2で表わされる。なお、複数の第1の凹部15の斜面15aの傾斜の平均値θa及び複数の第2の凹部25の斜面25aの傾斜の平均値θbはそれぞれ、所定数の各凹部の斜面の傾斜を測定して、その算術平均を算出することにより求めることができる。 The inclination with respect to the surface 10a of the inclined surface 15a of the 1st recessed part 15 which the copper foil material 10 has is represented by angle (theta) a1 . For example, in FIG. 3, the slope of the slope 15 a of one first recess 15 is represented by θ a1 , and the slope of the slope 15 a of the other first recess 15 adjacent to one first recess 15 is It is represented by θ a2 . Similarly, the inclination of the inclined surface 25a of the second recess 25 with the copper plating layer 20 is represented by theta b1. For example, the slope of the slope 25a of one second recess 25 is represented by θb1 , and the slope of the slope 25a of another second recess 25 adjacent to the second recess 25 is θb2 . Represented. Note that the average value θa of the slopes 15a of the plurality of first recesses 15 and the average value θb of the slopes 25a of the plurality of second recesses 25 are measured by measuring the slopes of the predetermined number of recesses, respectively. Thus, it can be obtained by calculating the arithmetic average.

(銅箔1の製造方法)
図4は、本発明の実施の形態に係る銅箔の製造工程の一例を示す。
(Method for producing copper foil 1)
FIG. 4 shows an example of the manufacturing process of the copper foil according to the embodiment of the present invention.

(銅箔準備工程)
まず、所定の形状、所定厚、及び所定の表面粗さを有する電解銅箔又は圧延銅箔からなり、一方の表面に複数の第1の凹部15を有する銅箔材1を準備する(ステップ100(以下、ステップを「S」と略す))。
(Copper foil preparation process)
First, a copper foil material 1 made of an electrolytic copper foil or a rolled copper foil having a predetermined shape, a predetermined thickness, and a predetermined surface roughness and having a plurality of first recesses 15 on one surface is prepared (step 100). (Hereafter, step is abbreviated as “S”)).

(電解脱脂工程)
次に、銅箔材1の少なくとも一方の表面を清浄化する(S110)。具体的に、銅箔材1の表面に電解脱脂を施すことにより表面を清浄化する。例えば、水酸化ナトリウム等のアルカリ溶液を用い、陰極電解脱脂を銅箔材1の表面に施すことにより、銅箔材1の表面を電解脱脂する。
(Electrolytic degreasing process)
Next, at least one surface of the copper foil material 1 is cleaned (S110). Specifically, the surface of the copper foil material 1 is cleaned by electrolytic degreasing. For example, the surface of the copper foil material 1 is electrolytically degreased by applying a cathode electrolytic degreasing to the surface of the copper foil material 1 using an alkali solution such as sodium hydroxide.

(酸洗処理工程)
次に、銅箔材1の表面に残存しているアルカリ溶液の中和、及び銅箔材1の表面の酸化膜を除去することを目的として、銅箔材1の表面に酸洗処理を施す(S120)。例えば、硫酸等の酸性の水溶液に銅箔材1を浸漬することにより、銅箔材1の表面に酸洗処理を施す。なお、酸性の水溶液として、銅エッチング液を用いることもできる。
(Pickling process)
Next, pickling treatment is performed on the surface of the copper foil material 1 for the purpose of neutralizing the alkaline solution remaining on the surface of the copper foil material 1 and removing the oxide film on the surface of the copper foil material 1. (S120). For example, the surface of the copper foil material 1 is pickled by immersing the copper foil material 1 in an acidic aqueous solution such as sulfuric acid. A copper etching solution can also be used as the acidic aqueous solution.

(銅めっき工程)
次に、硫酸銅及び硫酸を主成分とした酸性の銅めっき浴を準備する。そして、当該銅めっき浴に銅箔材1を陰極として浸す。この状態で、銅箔材1に電流を供給して、銅箔材1の一方の表面に電解処理を施すことにより、当該表面に銅めっき層20を形成する(S130)。具体的には、第1の凹部15の深さの平均値より小さい深さの平均値を有する第2の凹部25を、第1の凹部15に対応する位置に有する銅めっき層を形成する。
(Copper plating process)
Next, an acidic copper plating bath mainly composed of copper sulfate and sulfuric acid is prepared. Then, the copper foil material 1 is immersed in the copper plating bath as a cathode. In this state, by supplying an electric current to the copper foil material 1 and performing electrolytic treatment on one surface of the copper foil material 1, the copper plating layer 20 is formed on the surface (S130). Specifically, a copper plating layer having a second recess 25 having an average depth smaller than the average depth of the first recess 15 at a position corresponding to the first recess 15 is formed.

電解処理は、所定の液組成を有する銅めっき浴を用い、所定の液温下で限界電流密度未満の電流密度で所定の時間、実施する。銅めっき層20は、例えば、0.1μm以上1μm以下の厚さに形成する。また、銅めっき浴を用いた電解処理は、一例として、以下の条件で実施できる。
硫酸銅五水和物:20g/dm以上300g/dm以下
硫酸:10g/dm以上200g/dm以下
液温:20℃以上50℃以下
めっき電流密度:5A/dm以上30A/dm未満(限界電流密度未満)
めっき時間:1秒以上20秒以下
The electrolytic treatment is performed using a copper plating bath having a predetermined liquid composition at a current density lower than the limit current density at a predetermined liquid temperature for a predetermined time. The copper plating layer 20 is formed to a thickness of 0.1 μm or more and 1 μm or less, for example. Moreover, the electrolytic treatment using a copper plating bath can be implemented under the following conditions as an example.
Copper sulfate pentahydrate: 20 g / dm 3 or more and 300 g / dm 3 or less Sulfuric acid: 10 g / dm 3 or more and 200 g / dm 3 or less Liquid temperature: 20 ° C. or more and 50 ° C. or less Plating current density: 5 A / dm 2 or more and 30 A / dm Less than 2 (less than the limit current density)
Plating time: 1 second to 20 seconds

また、銅めっき層20を形成する電解処理において、銅めっき層20の表面を平滑化することを目的として、所定の添加剤を添加することもできる。添加剤としては、例えば、塩素、3−メルカプト−1−スルホン酸又はビス(3−スルホプロピル)ジスルフィド等のメルカプト基を持つ有機硫黄化合物、ポリエチレングリコール又はポリプロピレングリコール等の界面活性剤、及び塩化物イオン等からなる群から選択される少なくとも1つの物質を用いることができる。   Moreover, in the electrolytic treatment for forming the copper plating layer 20, a predetermined additive can be added for the purpose of smoothing the surface of the copper plating layer 20. Examples of additives include organic sulfur compounds having mercapto groups such as chlorine, 3-mercapto-1-sulfonic acid or bis (3-sulfopropyl) disulfide, surfactants such as polyethylene glycol or polypropylene glycol, and chlorides. At least one substance selected from the group consisting of ions and the like can be used.

また、プリント配線板等の製造に用いられる各種の銅めっき用添加剤を用いることもできる。銅めっき用添加剤としては、例えば、CU−BRITE TH−RIII(荏原ユージライト社製)、トップルチナLS(奥野製薬社製)、カパーグリームCLX(メルテックス社製)、スルカップEUC(上村工業社製)等を用いることができる。   Moreover, the various additives for copper plating used for manufacture of a printed wiring board etc. can also be used. As an additive for copper plating, for example, CU-BRITE TH-RIII (manufactured by Sugawara Eugelite), Top Lucina LS (manufactured by Okuno Pharmaceutical Co., Ltd.), Capper Grime CLX (manufactured by Meltex Co., Ltd.), Sulcup EUC (manufactured by Uemura Kogyo Co., Ltd.) ) Etc. can be used.

めっき電流密度は、銅めっき層20の表面20aの凹凸の程度を抑制することを目的として、限界電流密度未満の電流密度に設定する。また、生産性を向上させることを目的として、めっき電流密度を所定値以上の値に設定すると共に、銅めっき層20の表面を平滑にすることを目的としてめっき電流密度を所定値以下の値に設定する。一例として、めっき電流密度は5A/dm以上30A/dm未満に設定する。 The plating current density is set to a current density less than the limit current density for the purpose of suppressing the degree of unevenness of the surface 20a of the copper plating layer 20. In addition, for the purpose of improving productivity, the plating current density is set to a value equal to or higher than a predetermined value, and the plating current density is set to a value equal to or lower than a predetermined value for the purpose of smoothing the surface of the copper plating layer 20. Set. As an example, the plating current density is set to 5 A / dm 2 or more and less than 30 A / dm 2 .

(粗化処理工程:第1処理工程)
続いて、銅めっき層20上に樹枝状銅めっき層を形成する(S140)。具体的には、硫酸銅及び硫酸を主成分として含む酸性の銅めっき浴を準備する。そして、この銅めっき浴に、銅めっき層20を有する銅箔材10を浸す。次に、当該銅箔材10を陰極として、所定の液温下で、銅めっき浴の限界電流密度以上の電流密度の電流を当該銅箔材10に供給する。これにより、銅めっき層20上に樹枝状の銅めっき層を形成する。なお、樹枝状の銅めっき層の大きさは、一例として、高さが0.2μm以上1.0μm以下程度であり、幅が0.2μm以上0.5μm以下程度である。
(Roughening treatment step: first treatment step)
Subsequently, a dendritic copper plating layer is formed on the copper plating layer 20 (S140). Specifically, an acidic copper plating bath containing copper sulfate and sulfuric acid as main components is prepared. And the copper foil material 10 which has the copper plating layer 20 is immersed in this copper plating bath. Next, using the copper foil material 10 as a cathode, a current having a current density equal to or higher than the limit current density of the copper plating bath is supplied to the copper foil material 10 at a predetermined liquid temperature. Thereby, a dendritic copper plating layer is formed on the copper plating layer 20. As an example, the dendritic copper plating layer has a height of about 0.2 μm to 1.0 μm and a width of about 0.2 μm to 0.5 μm.

樹枝状の銅めっき層を形成する場合における銅めっき浴、及び銅めっきの条件は、例えば、以下の条件を用いることができる。なお、樹枝状の銅めっき層を形成する場合には、例えば、銅を除く金属元素(モリブデン、鉄、又はコバルト等)を添加することもできる。なお、添加する金属元素としてモリブデンを用いた場合、形成される樹枝状の銅めっき層の断面形状に丸みを持たせること、及び銅めっき層20の特定の部分に樹枝状の銅めっき層が異常成長することを抑制できる。
硫酸銅五水和物:20g/dm以上300g/dm以下
硫酸:10g/dm以上200g/dm以下
液温:20℃以上50℃以下
めっき電流密度:30A/dm以上100A/dm以下(限界電流密度以上)
めっき時間:1秒以上10秒以下
For example, the following conditions can be used as the copper plating bath and the copper plating conditions in the case of forming the dendritic copper plating layer. In addition, when forming a dendritic copper plating layer, metal elements (such as molybdenum, iron, or cobalt) other than copper can be added, for example. When molybdenum is used as the metal element to be added, the cross-sectional shape of the dendritic copper plating layer to be formed is rounded, and the dendritic copper plating layer is abnormal in a specific portion of the copper plating layer 20. Growth can be suppressed.
Copper sulfate pentahydrate: 20 g / dm 3 to 300 g / dm 3 or less Sulfuric acid: 10 g / dm 3 to 200 g / dm 3 or less Liquid temperature: 20 ° C. to 50 ° C. Plating current density: 30 A / dm 2 to 100 A / dm 2 or less (over limit current density)
Plating time: 1 to 10 seconds

(粗化処理工程:第2処理工程)
次に、樹枝状銅めっき層からコブ状銅めっき層を形成する(S150)。具体的には、硫酸銅及び硫酸を主成分として含む酸性の銅めっき浴を準備する。そして、この銅めっき浴に、樹枝状銅めっき層を有する銅箔材10を浸す。次に、当該銅箔材10を陰極として、所定の液温下で、銅めっき浴の限界電流密度未満の電流密度の電流を当該銅箔材10に供給する。これにより、樹枝状銅めっき層の表面に、平滑な表面を有するコブ状の銅めっき層(被せめっき)が形成される。これにより、樹枝状銅めっき層に所定厚の銅めっき層が被覆され、コブ状銅めっき層が形成される。本実施の形態に係る粗化処理層30が形成される。
(Roughening treatment step: second treatment step)
Next, a bump-like copper plating layer is formed from the dendritic copper plating layer (S150). Specifically, an acidic copper plating bath containing copper sulfate and sulfuric acid as main components is prepared. And the copper foil material 10 which has a dendritic copper plating layer is immersed in this copper plating bath. Next, using the copper foil material 10 as a cathode, a current having a current density lower than the limit current density of the copper plating bath is supplied to the copper foil material 10 at a predetermined liquid temperature. As a result, a bump-shaped copper plating layer (cover plating) having a smooth surface is formed on the surface of the dendritic copper plating layer. Thus, the dendritic copper plating layer is coated with a copper plating layer having a predetermined thickness, and a bump-shaped copper plating layer is formed. A roughening treatment layer 30 according to the present embodiment is formed.

コブ状銅めっき層を形成する場合における銅めっき浴、及び銅めっきの条件は、例えば、以下の条件を用いることができる。
硫酸銅五水和物:20g/dm以上300g/dm以下
硫酸:10g/dm以上200g/dm以下
液温:20℃以上50℃以下
めっき電流密度:1A/dm以上20A/dm以下(限界電流密度未満)
めっき時間:1秒以上20秒以下
For example, the following conditions can be used as the copper plating bath and the copper plating conditions in forming the bumpy copper plating layer.
Copper sulfate pentahydrate: 20 g / dm 3 to 300 g / dm 3 or less Sulfuric acid: 10 g / dm 3 to 200 g / dm 3 or less Liquid temperature: 20 ° C. to 50 ° C. Plating current density: 1 A / dm 2 to 20 A / dm 2 or less (less than the limit current density)
Plating time: 1 second to 20 seconds

(後処理めっき工程)
本実施の形態に係る銅箔1の製造方法においては、コブ状銅めっき層を設けた後に、所定の特性を銅箔1に備えさせることを目的として、後処理めっき膜を粗化処理層30の上に形成することができる。まず、粗化処理層30等を構成する銅の拡散を防止することを目的として、粗化処理層30上にニッケルめっき層(又はニッケル合金めっき層)を形成する(S160)。
(Post-treatment plating process)
In the manufacturing method of the copper foil 1 according to the present embodiment, after the bump-shaped copper plating layer is provided, the post-treatment plating film is roughened with the purpose of providing the copper foil 1 with predetermined characteristics. Can be formed on top. First, a nickel plating layer (or nickel alloy plating layer) is formed on the roughening treatment layer 30 for the purpose of preventing diffusion of copper constituting the roughening treatment layer 30 and the like (S160).

次に、銅箔1の耐熱性を向上させることを目的として、亜鉛めっき層(又は亜鉛合金めっき層)を、ニッケルめっき層の上に形成する(S170)。更に、銅箔1の樹脂基材に対する密着性を向上させることを目的として、化成処理皮膜としてのシランカップリング処理層を、亜鉛めっき層の上に形成する(S180)。   Next, for the purpose of improving the heat resistance of the copper foil 1, a zinc plating layer (or zinc alloy plating layer) is formed on the nickel plating layer (S170). Furthermore, for the purpose of improving the adhesion of the copper foil 1 to the resin substrate, a silane coupling treatment layer as a chemical conversion treatment film is formed on the galvanized layer (S180).

以上の工程を経て、本実施の形態に係る銅箔1が製造される。本実施の形態に係る銅箔1は、例えば、プリント配線基板、プラズマディスプレイ用電磁波シールド、ICカードが備えるアンテナ等に適用できる。   Through the above steps, copper foil 1 according to the present embodiment is manufactured. The copper foil 1 according to the present embodiment can be applied to, for example, a printed wiring board, an electromagnetic wave shield for plasma display, an antenna provided in an IC card, and the like.

(実施の形態の効果)
本発明の実施の形態によれば、銅箔材10上に薄い膜厚の銅めっき層20を形成した後に粗化処理を施すことにより、表面粗さが小さいと共に、高い屈曲性を有した銅箔1を提供できる。これにより、本実施の形態に係る銅箔1によれば、極めて薄い銅めっき層20を形成した後に、表面に粗化処理層30を形成するだけで、樹脂基材に対する密着性を確保できると共に、銅箔1にエッチング処理を施して微細配線を形成する場合に、微細配線下にアンダーカットが発生することを抑制できる。
(Effect of embodiment)
According to the embodiment of the present invention, the copper plating layer 20 having a thin film thickness is formed on the copper foil material 10 and then subjected to the roughening treatment, whereby the surface roughness is small and the copper having high flexibility. The foil 1 can be provided. Thereby, according to the copper foil 1 which concerns on this Embodiment, while forming the very thin copper plating layer 20, only by forming the roughening process layer 30 on the surface, while ensuring the adhesiveness with respect to a resin base material, When the copper foil 1 is etched to form a fine wiring, it is possible to suppress the occurrence of undercuts under the fine wiring.

すなわち、本発明の実施の形態によれば、例えば、小型化が要求される電子機器に用いられるフレキシブルプリント基板(FPC)等のプリント配線基板において、銅配線からなる配線ピッチを微細化した場合であっても、微細化した銅配線の底部がエッチングにより除去されることを抑制できる。また、粗化処理を銅箔1に施した場合に、銅箔1の表面におけるクレータの発生を大幅に抑制することもでき、CCL作製時におけるボイド不良を低減できる。   That is, according to the embodiment of the present invention, for example, in a printed wiring board such as a flexible printed board (FPC) used for an electronic device that is required to be downsized, the wiring pitch made of copper wiring is reduced. Even if it exists, it can suppress that the bottom part of the refined | miniaturized copper wiring is removed by an etching. Moreover, when the roughening process is performed on the copper foil 1, the generation of craters on the surface of the copper foil 1 can be significantly suppressed, and void defects during CCL fabrication can be reduced.

[実施例]
図5は、本発明の実施例に係る銅箔の断面の概要を示す。
[Example]
FIG. 5 shows an outline of a cross section of a copper foil according to an embodiment of the present invention.

本発明の実施例1〜8においては、所定の銅箔材10に銅めっき層20を施した後、銅めっき層20上に粗化処理層30を形成した。この場合において、銅箔材10の第1の凹部15に対応する第2の凹部25の一部において、第2の凹部25の表面に粗化処理層30が形成されない部分があった。この粗化処理層30が形成されない部分をクレータ40とした。ここで、本実施例に係る粗化処理層30は、樹枝状銅めっき層36とコブ状銅めっき層37とから形成される。   In Examples 1 to 8 of the present invention, after the copper plating layer 20 was applied to the predetermined copper foil material 10, the roughening treatment layer 30 was formed on the copper plating layer 20. In this case, in the part of the second recess 25 corresponding to the first recess 15 of the copper foil material 10, there was a portion where the roughened layer 30 was not formed on the surface of the second recess 25. The portion where the roughened layer 30 is not formed was designated as a crater 40. Here, the roughening treatment layer 30 according to the present embodiment is formed of a dendritic copper plating layer 36 and a bump-like copper plating layer 37.

本発明の実施例1においては、銅箔材10として厚さが17μmの圧延銅箔を用いた。そして、この圧延銅箔の表面を電解脱脂処理、及び酸洗処理を施すことにより清浄化した。なお、電解脱脂処理は、水酸化ナトリウム40g/dm、及び炭酸ナトリウム20g/dmを含む水溶液中で温度を40℃に設定すると共に、電流密度を5A/dmに設定して、10秒間、実施した。また、酸洗処理は、硫酸150g/dmを含む水溶液で温度を25℃に設定して、5秒間、実施した。酸洗処理後、銅箔材10を流水により水洗した。 In Example 1 of the present invention, a rolled copper foil having a thickness of 17 μm was used as the copper foil material 10. And the surface of this rolled copper foil was cleaned by performing an electrolytic degreasing process and a pickling process. The electrolytic degreasing treatment is performed by setting the temperature to 40 ° C. in an aqueous solution containing sodium hydroxide 40 g / dm 3 and sodium carbonate 20 g / dm 3 and setting the current density to 5 A / dm 2 for 10 seconds. ,Carried out. The pickling treatment was performed for 5 seconds with an aqueous solution containing 150 g / dm 3 of sulfuric acid at a temperature of 25 ° C. After the pickling treatment, the copper foil material 10 was washed with running water.

次に、銅箔材10の表面に銅めっき層20をめっきにより形成した。具体的に、0.11μmの厚さを有する銅めっき層20を銅箔材10の表面に形成した。銅めっき液は、硫酸銅五水和物180g/dm、及び硫酸100g/dmを含む水溶液を用いた。銅めっきの条件は、めっき液の液温を45℃に設定すると共に、めっき電流密度を20A/dmに設定して、めっき時間は2秒間とした。 Next, the copper plating layer 20 was formed on the surface of the copper foil material 10 by plating. Specifically, a copper plating layer 20 having a thickness of 0.11 μm was formed on the surface of the copper foil material 10. As the copper plating solution, an aqueous solution containing copper sulfate pentahydrate 180 g / dm 3 and sulfuric acid 100 g / dm 3 was used. The conditions for copper plating were that the temperature of the plating solution was set to 45 ° C., the plating current density was set to 20 A / dm 2 , and the plating time was 2 seconds.

次に、銅めっき層20が形成された銅箔材10を水洗した。そして、硫酸銅五水和物75g/dm、硫酸150g/dm、硫酸鉄七水和物20g/dm、及びモリブデン酸ナトリウム1g/dmを含むめっき浴を調整した。そして、当該めっき浴の液温を30℃に設定すると共に、電流密度を40A/dmに設定して、5秒間の電解処理を銅めっき層20に施すことにより、銅めっき層20上に樹枝状銅めっき層36を形成した。 Next, the copper foil material 10 on which the copper plating layer 20 was formed was washed with water. Then, a plating bath containing copper sulfate pentahydrate 75 g / dm 3 , sulfuric acid 150 g / dm 3 , iron sulfate heptahydrate 20 g / dm 3 , and sodium molybdate 1 g / dm 3 was prepared. And while setting the liquid temperature of the said plating bath to 30 degreeC, setting a current density to 40 A / dm < 2 > and performing the electrolytic treatment for 5 second to the copper plating layer 20, dendritics on the copper plating layer 20 are carried out. A copper-like plated layer 36 was formed.

次に、樹枝状銅めっき層36が形成された銅箔材10を水洗した。そして、硫酸銅五水和物150g/dm、及び硫酸100g/dmを含むめっき液を調整した。このめっき液の液温を40℃に調整すると共に、電流密度を10A/dmに設定して、10秒間の電解処理を樹枝状銅めっき層36に施すことにより、樹枝状銅めっき層36からコブ状銅めっき層37を形成した。 Next, the copper foil material 10 on which the dendritic copper plating layer 36 was formed was washed with water. Then, a plating solution containing copper sulfate pentahydrate 150 g / dm 3 and sulfuric acid 100 g / dm 3 was prepared. The temperature of the plating solution is adjusted to 40 ° C., the current density is set to 10 A / dm 2, and the electrolytic treatment for 10 seconds is applied to the dendritic copper plating layer 36, thereby removing the dendritic copper plating layer 36. A bumpy copper plating layer 37 was formed.

続いて、硫酸ニッケル六水和物300g/dm、塩化ニッケル45g/dm、及び硼酸50g/dmを含むめっき液を調整した。このめっき液の液温を50℃に設定すると共に、電流密度を2A/dmに設定して、5秒間の電解処理をコブ状銅めっき層37が形成された銅箔材10に施した。これにより、コブ状銅めっき層37上に、l0μg/cmのニッケルめっき層を形成した。 Subsequently, a plating solution containing nickel sulfate hexahydrate 300 g / dm 3 , nickel chloride 45 g / dm 3 , and boric acid 50 g / dm 3 was prepared. The temperature of this plating solution was set to 50 ° C., the current density was set to 2 A / dm 2, and the electrolytic treatment for 5 seconds was applied to the copper foil material 10 on which the bumpy copper plating layer 37 was formed. Thereby, a nickel plating layer of 10 μg / cm 2 was formed on the bumpy copper plating layer 37.

次に、ニッケルめっき層が形成された銅箔材10を水洗した。そして、硫酸亜鉛90g/dm、及び硫酸ナトリウム70g/dmを含むめっき液を調整した。このめっき液の液温を30℃に設定すると共に、電流密度を1.5A/dmに設定して、4秒間の電解処理をニッケルメッキ層が形成された銅箔材10に施した。これにより、ニッケルメッキ層上に、l.0μg/cmの亜鉛めっき層を形成した。 Next, the copper foil material 10 on which the nickel plating layer was formed was washed with water. A plating solution containing 90 g / dm 3 of zinc sulfate and 70 g / dm 3 of sodium sulfate was prepared. The temperature of the plating solution was set to 30 ° C., the current density was set to 1.5 A / dm 2, and the electrolytic treatment for 4 seconds was applied to the copper foil material 10 on which the nickel plating layer was formed. As a result, l. A 0 μg / cm 2 galvanized layer was formed.

更に、亜鉛めっき層が形成された銅箔材10を水洗した。そして、3−アミノプロピルトリメトキシシラン10%のシランカップリング液に、当該銅箔材10を室温下で10秒間、浸漬した後、直ちに100℃の温度で当該銅箔材10を乾燥させた。これにより、亜鉛めっき層上にシランカップリング処理層が形成され、実施例1に係る銅箔1が得られた。   Furthermore, the copper foil material 10 on which the galvanized layer was formed was washed with water. Then, the copper foil material 10 was dipped in a 10% 3-aminopropyltrimethoxysilane silane coupling solution at room temperature for 10 seconds, and then the copper foil material 10 was immediately dried at a temperature of 100 ° C. Thereby, the silane coupling process layer was formed on the zinc plating layer, and the copper foil 1 which concerns on Example 1 was obtained.

本発明の実施例2に係る銅箔1は、0.42μm厚の銅めっき層20を銅箔材10上に形成した点以外は、実施例1に係る銅箔1と同様の方法で製造した。   The copper foil 1 according to Example 2 of the present invention was manufactured by the same method as that of the copper foil 1 according to Example 1, except that a 0.42 μm thick copper plating layer 20 was formed on the copper foil material 10. .

本発明の実施例3に係る銅箔1は、0.71μm厚の銅めっき層20を銅箔材10上に形成した点以外は、実施例1に係る銅箔1と同様の方法で製造した。   The copper foil 1 according to Example 3 of the present invention was manufactured in the same manner as the copper foil 1 according to Example 1 except that a 0.71 μm thick copper plating layer 20 was formed on the copper foil material 10. .

本発明の実施例4に係る銅箔1は、銅めっき層20の形成に用いた銅めっき液に所定の添加剤を添加した点と銅めっき層20を形成する電流密度を5A/dmに設定して、8秒間の電解処理とした点以外は、実施例1に係る銅箔1と同様の方法で製造した。添加した添加剤は以下のとおりである。すなわち、硫酸銅五水和物180g/dm、硫酸100g/dm、ビス(3−スルホプロピル)ジスルフィドを50mg/dm、ポリエチレングリコール3000を200mg/dm、及び塩化物イオンを50mg/dm含む水溶液を添加剤として用いた。 In the copper foil 1 according to Example 4 of the present invention, the point of adding a predetermined additive to the copper plating solution used for forming the copper plating layer 20 and the current density for forming the copper plating layer 20 to 5 A / dm 2 . It was manufactured by the same method as the copper foil 1 according to Example 1 except that the electrolytic treatment was performed for 8 seconds. The added additives are as follows. That is, copper sulfate pentahydrate 180 g / dm 3 , sulfuric acid 100 g / dm 3 , bis (3-sulfopropyl) disulfide 50 mg / dm 3 , polyethylene glycol 3000 200 mg / dm 3 , and chloride ion 50 mg / dm 3 An aqueous solution containing 3 was used as an additive.

本発明の実施例5に係る銅箔1は、0.42μm厚の銅めっき層20を銅箔材10上に形成した点と銅めっき層20を形成する電流密度を20A/dmに設定して、7.5秒間の電解処理とした点以外は、実施例4に係る銅箔1と同様の方法で製造した。 The copper foil 1 which concerns on Example 5 of this invention sets the current density which forms the point which formed the copper plating layer 20 of 0.42 micrometer thickness on the copper foil material 10, and the copper plating layer 20 to 20 A / dm < 2 >. The copper foil 1 was manufactured in the same manner as the copper foil 1 according to Example 4 except that the electrolytic treatment was performed for 7.5 seconds.

本発明の実施例6に係る銅箔1は、0.71μm厚の銅めっき層20を銅箔材10上に形成した点と銅めっき層20を形成する電流密度を30A/dmに設定して、8.7秒間の電解処理とした点以外は、実施例4に係る銅箔1と同様の方法で製造した。 The copper foil 1 which concerns on Example 6 of this invention sets the current density which forms the point which formed the copper plating layer 20 of 0.71 micrometer thickness on the copper foil material 10, and the copper plating layer 20 to 30 A / dm < 2 >. The copper foil 1 was manufactured in the same manner as the copper foil 1 according to Example 4 except that the electrolytic treatment was performed for 8.7 seconds.

本発明の実施例7に係る銅箔1は、樹枝状銅めっき層を形成する時の電流密度を変更した点以外は、実施例1に係る銅箔1と同様の方法で製造した。すなわち、実施例7においては、樹枝状銅めっき層を形成する時の電流密度を45A/dmに設定すると共に、めっき時間を10秒間とした。 The copper foil 1 which concerns on Example 7 of this invention was manufactured by the method similar to the copper foil 1 which concerns on Example 1 except the point which changed the current density at the time of forming a dendritic copper plating layer. That is, in Example 7, the current density when forming the dendritic copper plating layer was set to 45 A / dm 2 and the plating time was set to 10 seconds.

本発明の実施例8に係る銅箔1は、1.2μm厚の銅めっき層20を銅箔材10上に形成した点以外は、実施例1に係る銅箔1と同様の方法で製造した。   The copper foil 1 which concerns on Example 8 of this invention was manufactured by the method similar to the copper foil 1 which concerns on Example 1 except the point which formed the 1.2-micrometer-thick copper plating layer 20 on the copper foil material 10. FIG. .

(比較例1)
比較例1に係る銅箔は、銅箔材10上に銅めっき層を形成しない点を除き、本発明の実施例1と同様の方法で製造した。
(Comparative Example 1)
The copper foil which concerns on the comparative example 1 was manufactured by the method similar to Example 1 of this invention except the point which does not form a copper plating layer on the copper foil material 10. FIG.

(比較例2)
比較例2に係る銅箔は、銅箔材10上に銅めっき層を形成するときの電流密度を35A/dmとした点を除き、本発明の実施例1と同様の方法で製造した。
(Comparative Example 2)
Copper foil of Comparative Example 2, except that the current density 35A / dm 2 at the time of forming a copper plating layer on Dohakuzai 10 was prepared in the same manner as in Example 1 of the present invention.

以上のようにして製造した実施例1〜8に係る銅箔1と、比較例1〜2に係る銅箔とのそれぞれについてその特性を評価した。   The characteristic was evaluated about each of the copper foil 1 which concerns on Examples 1-8 manufactured as mentioned above, and the copper foil which concerns on Comparative Examples 1-2.

なお、銅箔材10上に形成された銅めっき層の厚さは、Foucused Ion Beamを用いて銅箔に加工を施して、加工後の断面を走査型電子顕微鏡で観察することにより求めた。また、銅箔の表面の凹部の形状(凹部の斜面、及び斜面の傾斜)は、原子間力顕微鏡(AFM SPM−9500J、島津製作所社製)を用いて評価した。   In addition, the thickness of the copper plating layer formed on the copper foil material 10 was calculated | required by processing a copper foil using Focused Ion Beam and observing the processed cross section with a scanning electron microscope. Moreover, the shape of the recessed part (the slope of a recessed part, and the inclination of a slope) of the surface of copper foil was evaluated using atomic force microscope (AFM SPM-9500J, Shimadzu Corp. make).

具体的には、銅めっき層を形成する前後において、銅箔材及び銅めっき層の表面を250μm×250μmの領域をAFMで走査して、走査した領域内の凹部の深さの平均値(Da及びDb)と、凹部の斜面の銅箔の表面に対する角度の平均値(θa及びθb)とを測定した。すなわち、本発明の実施の形態の図2及び図3において説明したのと同様に、Da及びDb、並びにθa及びθbを算出した。なお、実施例1〜8、及び比較例1〜2においてはそれぞれ、銅箔材表面の100か所の凹部、及び銅めっき層表面の100か所の凹部のそれぞれについて凹部の深さ及び斜面の角度を測定した。そして、測定結果から凹部の深さの平均値及び斜面の角度の平均値を算出した。   Specifically, before and after the formation of the copper plating layer, the surface of the copper foil material and the copper plating layer was scanned with an AFM on a 250 μm × 250 μm region, and the average value of the depths of the recesses in the scanned region (Da And Db) and average values (θa and θb) of the angles of the inclined surfaces of the recesses with respect to the surface of the copper foil were measured. That is, Da and Db, and θa and θb were calculated in the same manner as described in FIGS. 2 and 3 of the embodiment of the present invention. In Examples 1 to 8 and Comparative Examples 1 and 2, the depth of the recess and the slope of each of the 100 recesses on the surface of the copper foil material and the 100 recesses on the surface of the copper plating layer were each. The angle was measured. And the average value of the depth of a recessed part and the average value of the angle of a slope were computed from the measurement result.

また、粗化処理層を形成した後の銅箔の表面粗さは、JIS B0601−1994によるRzにより評価した。表面粗さは、表面粗さ測定機(SE500表面粗さ測定機、小坂研究所社製)を用いて評価した。   Moreover, the surface roughness of the copper foil after forming a roughening process layer was evaluated by Rz by JISB0601-1994. The surface roughness was evaluated using a surface roughness measuring machine (SE500 surface roughness measuring machine, manufactured by Kosaka Laboratory).

図6は、銅箔の屈曲特性の評価方法の概要を示す。   FIG. 6 shows an outline of a method for evaluating the bending characteristics of a copper foil.

銅箔の屈曲特性の評価には、図6に示す屈曲特性を調べることのできる試験機を用いた。試験機は、振動発生源としての振動発生装置100と、振動発生装置100によって発生した振動を銅箔1に伝達して付与する振動付加部110と、銅箔1を所定の位置に固定する導体固定部130a乃至130dと、振動発生装置100を所定の台に固定する支持部120a及び120bとを備える。   For the evaluation of the bending characteristics of the copper foil, a testing machine capable of examining the bending characteristics shown in FIG. 6 was used. The testing machine includes a vibration generating device 100 as a vibration generating source, a vibration adding unit 110 that transmits and applies the vibration generated by the vibration generating device 100 to the copper foil 1, and a conductor that fixes the copper foil 1 in a predetermined position. Fixed portions 130a to 130d and support portions 120a and 120b for fixing the vibration generating device 100 to a predetermined base are provided.

具体的に、銅箔1の一方の端部付近を導体固定部130aと130cとで固定して、銅箔1の他方の端部付近を導体固定部130bと130dとで固定すると共に、銅箔1の中央部に振動付加部110を接触させることにより、銅箔1を逆Wの字形状に保持した。なお、実施例1〜8、及び比較例1〜2に係る銅箔のそれぞれを、試験片の採取方向を圧延方向として、幅12.7mm、長さ200mmのテープ形状のサンプルにして屈曲特性を評価した。屈曲特性の測定は、曲率半径を2.5mm、ストロークを10mm、及び屈曲速度を1500回/分に設定したときの、サンプル破断時の屈曲回数を屈曲寿命として評価した。   Specifically, the vicinity of one end of the copper foil 1 is fixed by the conductor fixing portions 130a and 130c, and the vicinity of the other end of the copper foil 1 is fixed by the conductor fixing portions 130b and 130d. By bringing the vibration applying portion 110 into contact with the central portion of the copper foil 1, the copper foil 1 was held in an inverted W shape. In addition, each of the copper foils according to Examples 1 to 8 and Comparative Examples 1 to 2 is made into a tape-shaped sample having a width of 12.7 mm and a length of 200 mm, with the sampling direction of the test piece as the rolling direction, and the bending characteristics. evaluated. For the measurement of the bending characteristics, the number of bendings at the time of sample breakage when the radius of curvature was set to 2.5 mm, the stroke was set to 10 mm, and the bending speed was set to 1500 times / minute was evaluated as the bending life.

また、クレータ密度は、実施例及び比較例に係る銅箔表面の3mm×3mmの領域を光学顕微鏡を用いて撮影した光学顕微鏡写真中のクレータ数から求めた。   Moreover, the crater density was calculated | required from the number of craters in the optical microscope photograph which image | photographed the 3 mm x 3 mm area | region of the copper foil surface which concerns on an Example and a comparative example using the optical microscope.

以上のような手法を用いて、実施例及び比較例に係る銅箔の特性を評価した結果を表1に示す。   Table 1 shows the results of evaluating the characteristics of the copper foils according to Examples and Comparative Examples using the above-described method.

Figure 2010037585
Figure 2010037585

表1の結果から、実施例1〜8においては、銅箔材10の表面に銅めっき層20を形成してDa及びDb、並びにθa及びθbを減少させることにより、クレータ密度を比較例より低減させることができ、クレータ等の欠陥が少なく屈曲性の高い銅箔が形成できることが示された。   From the result of Table 1, in Examples 1-8, the crater density is reduced from the comparative example by forming the copper plating layer 20 on the surface of the copper foil material 10 and reducing Da and Db, and θa and θb. It was shown that a highly flexible copper foil with few defects such as craters can be formed.

以上、本発明の実施の形態及び実施例を説明したが、上記に記載した実施の形態及び実施例は特許請求の範囲に係る発明を限定するものではない。また、実施の形態及び実施例の中で説明した特徴の組合せの全てが発明の課題を解決するための手段に必須であるとは限らない点に留意すべきである。   While the embodiments and examples of the present invention have been described above, the embodiments and examples described above do not limit the invention according to the claims. It should be noted that not all combinations of features described in the embodiments and examples are necessarily essential to the means for solving the problems of the invention.

本発明の実施の形態に係る銅箔の断面図である。It is sectional drawing of the copper foil which concerns on embodiment of this invention. 本発明の実施の形態に係る第1の凹部及び第2の凹部の深さの評価方法の概要図である。It is a schematic diagram of the evaluation method of the depth of the 1st recessed part and 2nd recessed part which concerns on embodiment of this invention. 本発明の実施の形態に係る第1の凹部の斜面及び第2の凹部の斜面の傾斜の評価方法の概要図である。It is an outline figure of the evaluation method of the slope of the slope of the 1st crevice and the slope of the 2nd crevice concerning an embodiment of the invention. 本発明の実施の形態に係る銅箔の製造工程のフローを示す図である。It is a figure which shows the flow of the manufacturing process of the copper foil which concerns on embodiment of this invention. 本発明の実施例に係る銅箔の断面図である。It is sectional drawing of the copper foil which concerns on the Example of this invention. 銅箔の屈曲特性の評価方法の概要図である。It is a schematic diagram of the evaluation method of the bending characteristic of copper foil.

符号の説明Explanation of symbols

1 銅箔
10 銅箔材
10a 表面
15 第1の凹部
15a 斜面
20 銅めっき層
20a 表面
25 第2の凹部
25a 斜面
30 粗化処理層
35 構造物
40 クレータ
100 振動発生装置
110 振動付加部
120a、120b 支持部
130a、130b、130c、130d 導体固定部
DESCRIPTION OF SYMBOLS 1 Copper foil 10 Copper foil material 10a Surface 15 1st recessed part 15a Slope 20 Copper plating layer 20a Surface 25 2nd recessed part 25a Slope 30 Roughening process layer 35 Structure 40 Crater 100 Vibration generator 110 Vibration addition part 120a, 120b Support part 130a, 130b, 130c, 130d Conductor fixing part

Claims (16)

一方の表面に第1の凹部を有する銅箔材と、
前記第1の凹部の深さの平均値より小さい深さの平均値を有する第2の凹部を、前記第1の凹部に対応する位置に有して前記一方の表面上に設けられる銅めっき層と
を備える銅箔。
A copper foil material having a first recess on one surface;
A copper plating layer provided on the one surface having a second recess having an average depth smaller than the average depth of the first recess at a position corresponding to the first recess. Copper foil provided with.
前記銅箔材は、電解銅箔又は圧延銅箔である
請求項1に記載の銅箔。
The copper foil according to claim 1, wherein the copper foil material is an electrolytic copper foil or a rolled copper foil.
前記第1の凹部は、前記銅箔材の表面に対して第1の傾斜角度を有する第1の斜面を含み、
前記第2の凹部は、前記銅箔材の表面に対して第2の傾斜角度を有する第2の斜面を含み、
前記第2の傾斜角度の平均値は、前記第1の傾斜角度の平均値より小さい
請求項2に記載の銅箔。
The first recess includes a first inclined surface having a first inclination angle with respect to the surface of the copper foil material,
The second recess includes a second inclined surface having a second inclination angle with respect to the surface of the copper foil material,
The copper foil according to claim 2, wherein an average value of the second inclination angles is smaller than an average value of the first inclination angles.
前記第2の傾斜角度の平均値は、1度以上10度以下である
請求項3に記載の銅箔。
4. The copper foil according to claim 3, wherein an average value of the second inclination angles is not less than 1 degree and not more than 10 degrees.
前記第2の凹部の深さの平均値は、0.1μm以上0.7μm以下である
請求項4に記載の銅箔。
5. The copper foil according to claim 4, wherein an average value of the depth of the second recess is 0.1 μm or more and 0.7 μm or less.
前記銅めっき層は、0.1μm以上1μm以下の厚さを有する
請求項5に記載の銅箔。
The copper foil according to claim 5, wherein the copper plating layer has a thickness of 0.1 μm or more and 1 μm or less.
前記銅めっき層上に設けられる粗化処理層
を更に備え、
前記粗化処理層は、複数の構造物を含み、前記一方の表面に略水平な前記銅めっき層の表面と、少なくとも一部の前記第2の凹部の表面とに形成される
請求項6に記載の銅箔。
A roughening layer provided on the copper plating layer;
The roughening treatment layer includes a plurality of structures, and is formed on the surface of the copper plating layer substantially horizontal to the one surface and at least a part of the surface of the second recess. The described copper foil.
前記粗化処理層は、銅又は銅合金から形成され、0.5μm以上3μm以下の表面粗さ(Rz)を有する
請求項7に記載の銅箔。
The said roughening process layer is copper foil of Claim 7 formed from copper or a copper alloy, and having the surface roughness (Rz) of 0.5 micrometer or more and 3 micrometers or less.
銅箔材を準備する銅箔材準備工程と、
前記銅箔材の表面に、限界電流密度未満の電流密度で銅めっき層を形成する銅めっき工程と
を備える銅箔製造方法。
A copper foil material preparation step of preparing a copper foil material;
A copper foil manufacturing method comprising: a copper plating step of forming a copper plating layer on the surface of the copper foil material at a current density less than a limit current density.
前記銅箔材準備工程は、一方の表面に第1の凹部を有する前記銅箔材を準備し、
前記銅めっき工程は、前記第1の凹部の深さの平均値より小さい深さの平均値を有する第2の凹部を、前記第1の凹部に対応する位置に有する前記銅めっき層を形成する
請求項9に記載の銅箔製造方法。
The copper foil material preparation step prepares the copper foil material having a first recess on one surface,
The copper plating step forms the copper plating layer having a second recess having an average depth smaller than an average depth of the first recess at a position corresponding to the first recess. The copper foil manufacturing method according to claim 9.
前記銅めっき層の表面に粗化処理層を形成する粗化処理工程
を更に備え、
前記粗化処理工程は、
前記限界電流密度以上の電流密度で電解処理する第1処理工程と、
前記第1処理工程後、前記限界電流密度未満の電流密度でめっき処理する第2処理工程と
を含む請求項10に記載の銅箔製造方法。
Further comprising a roughening treatment step of forming a roughening treatment layer on the surface of the copper plating layer;
The roughening treatment step includes
A first treatment step for electrolytic treatment at a current density equal to or higher than the limit current density;
The copper foil manufacturing method according to claim 10, further comprising a second treatment step of performing a plating treatment at a current density lower than the limit current density after the first treatment step.
前記銅めっき工程は、5A/dm以上30A/dm未満の電流密度で前記銅めっき層を形成する
請求項11に記載の銅箔製造方法。
The said copper plating process is a copper foil manufacturing method of Claim 11 which forms the said copper plating layer with the current density of 5 A / dm < 2 > or more and less than 30 A / dm < 2 >.
前記銅めっき工程は、メルカプト基を有する有機硫黄化合物、界面活性剤、及び塩化物イオンを含むめっき液を用いて前記銅めっき層を形成する
請求項12に記載の銅箔製造方法。
The said copper plating process is a copper foil manufacturing method of Claim 12 which forms the said copper plating layer using the plating solution containing the organic sulfur compound which has a mercapto group, surfactant, and a chloride ion.
一方の表面に第1の凹部を有する銅箔材と、
前記第1の凹部に対応する位置に第2の凹部を有して前記一方の表面上に設けられる銅めっき層と
を備え、
前記第1の凹部は、前記銅箔材の表面に対して第1の傾斜角度を有する第1の斜面を含み、
前記第2の凹部は、前記銅箔材の表面に対して第2の傾斜角度を有する第2の斜面を含み、
前記第2の傾斜角度の平均値は、前記第1の傾斜角度の平均値より小さい銅箔。
A copper foil material having a first recess on one surface;
A copper plating layer provided on the one surface having a second recess at a position corresponding to the first recess,
The first recess includes a first inclined surface having a first inclination angle with respect to the surface of the copper foil material,
The second recess includes a second inclined surface having a second inclination angle with respect to the surface of the copper foil material,
The average value of the second inclination angle is a copper foil that is smaller than the average value of the first inclination angle.
前記銅めっき層は、0.1μm以上1μm以下の厚さを有する
請求項14に記載の銅箔。
The copper foil according to claim 14, wherein the copper plating layer has a thickness of 0.1 μm or more and 1 μm or less.
一方の表面に第1の凹部を有する銅箔材と、
前記第1の凹部の深さの平均値より小さい深さの平均値を有する第2の凹部を、前記第1の凹部に対応する位置に有して前記一方の表面上に設けられ、0.1μm以上1μm以下の厚さを有する銅めっき層と
を備える銅箔。
A copper foil material having a first recess on one surface;
A second recess having an average depth smaller than the average depth of the first recess is provided on the one surface at a position corresponding to the first recess; A copper foil provided with a copper plating layer having a thickness of 1 μm or more and 1 μm or less.
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JP5728118B1 (en) * 2014-09-22 2015-06-03 株式会社Shカッパープロダクツ Surface-treated copper foil, method for producing the surface-treated copper foil, and copper-clad laminate using the surface-treated copper foil
WO2018047443A1 (en) * 2016-09-09 2018-03-15 花王株式会社 Crystals of dicarboxylic acid and production process therefor
US10619262B1 (en) 2019-06-27 2020-04-14 Chang Chun Petrochemical Co., Ltd. Electrodeposited copper foil

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