JP2010034590A - Semiconductor device and method of mounting the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents breakage of a mounted part by rapid volume expansion of absorbed moisture and suppresses loads to bonded parts of the semiconductor device. <P>SOLUTION: The semiconductor device is constructed such that a semiconductor chip 1 and a circuit board 3 are electrically connected via bumps 2 formed on the electrodes of the semiconductor chip 1 and via wiring 4 formed on the circuit board 3, while a sealing resin 5 is interposed between the semiconductor chip 1 and the circuit board 3. A structure capable of reducing stresses caused by the absorbed moisture contained in the sealing resin 5 is constructed by through-holes 21 formed in the circuit board 3, wherein the through-holes 21 are positioned at corners of the semiconductor-chip mounted region 3a of the circuit board 3. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device having a high-quality mounting structure on which a semiconductor element used for a general electric product is mounted, and a mounting method thereof.

  In recent years, downsizing of electronic circuit boards has been strongly demanded from the downsizing and thinning of electrical products. Mobile devices such as mobile phone terminals have a remarkable increase in functions, and there is a strong demand for flip chip mounting in which an IC chip of a circuit board is mounted barely instead of a resin molded package.

  For this reason, various semiconductor element mounting methods have been proposed and put into practical use. For example, in mounting a driver semiconductor element on a flexible substrate in a liquid crystal module, an anisotropic conductive film in which conductive particles are dispersed is generally used as a semiconductor. Many mounting methods of semiconductor elements used as a sealing material in mounting of elements have been put into practical use. However, in this mounting method, the limit of insulation adjacent to the junction is approaching the evolution of the narrow pitch of the semiconductor element, and the quality of moisture resistance reliability is becoming strict. In order to solve such a problem, Patent Document 1 discloses a mounting method in which a resin film containing no conductive particles is used as a sealing material in semiconductor element mounting.

  A method for bonding the IC chip to the circuit board of the electronic device will be described below. As shown in FIGS. 6A1 and 6A2, the wafer is divided by a dicing apparatus to divide the semiconductor element 31 into individual pieces, and stud bumps 32 using Au wires are formed on the electrode pads of the semiconductor element 31, respectively. To do. The height of these stud bumps 32 is usually 70 to 80 μm.

  Next, as shown in FIG. 6B, a resin sheet (sealing resin) 35 not containing conductive particles is placed in the semiconductor element mounting region on the circuit board 33, and heated and pressed using a crimping tool. Then, the resin sheet 35 is stuck on the circuit board 33. At this time, it is necessary to heat the resin sheet 35 without causing a curing reaction, to cause the resin sheet 35 to soften and to be easily attached to the circuit board 33. The heating temperature of 35 is normally 60-100 degreeC.

  The film 35a called a separator attached to the upper surface of the resin sheet 35 is peeled off, and the semiconductor element 31 is aligned so that the substrate electrode 34 on the circuit board 33 and the stud bump 32 are in contact with each other as shown in FIG. Then, it is mounted on the circuit board 33.

  As shown in FIG. 6D, the semiconductor element 31 is heated and pressed on the circuit board 33 by a heatable pressure bonding tool 37 to cause a curing reaction of the resin sheet 35 and pressure bonding. The crimping conditions at this time are usually 180 to 240 ° C. and 8 to 30 seconds.

  Through the above process, a semiconductor package called a CSP (chip size package) that can easily mount the semiconductor element 31 in a short time and has high reliability has been provided.

Japanese Patent No. 3150347

  However, the conventional method for mounting a semiconductor device has the following problems.

  In general, in a semiconductor package, it is necessary to solder and reflow a semiconductor device on which a semiconductor element is mounted on a circuit board. However, when the resin sheet having the function of sealing the semiconductor device absorbs moisture, the moisture absorption in the semiconductor device rapidly expands due to the rapid temperature rise of the soldering reflow, and the mounting portion of the semiconductor device becomes There arises a problem that the semiconductor device is broken or the quality of the junction of the semiconductor device is deteriorated.

  Therefore, as a conventional measure, the drying process of the semiconductor device is performed before soldering, or the humidity management is performed with high accuracy when the semiconductor device is stored, and the drying process and the humidity management are a cause of high cost. It was.

  An object of the present invention is to provide a semiconductor device that solves the above-described problems and a mounting method thereof.

  According to the first aspect of the present invention, a semiconductor element and a circuit board are electrically joined to each other through a bump formed on an electrode of the semiconductor element and a wiring provided on the circuit board. In a semiconductor device in which a sealing resin is interposed between circuit boards, a structure capable of reducing the stress generated by a moisture absorption component contained in the sealing resin is configured by a through hole formed in the circuit board, and the through hole The positions of the holes are formed in the corners of the semiconductor element mounting region of the circuit board.

  According to a second aspect of the present invention, the structure capable of reducing the stress generated by the moisture absorption component is constituted by a through hole formed in the circuit board, and the position of the through hole is adjacent to the semiconductor element mounting region of the circuit board. It is formed at the corner within 0.6 mm from the two sides.

  According to the third aspect of the present invention, the through hole is filled with a closing resin for preventing leakage of the sealing resin.

  According to a fourth aspect of the present invention, the opening of the through hole on the surface opposite to the mounting surface of the semiconductor element is covered with a closing sheet-like resin film that prevents leakage of the sealing resin.

According to a fifth aspect of the present invention, a semiconductor element and a circuit board are electrically joined to each other through a bump formed on an electrode of the semiconductor element and a wiring provided on the circuit board. In a semiconductor device in which a sealing resin is interposed between circuit boards, the moisture permeability of the resin material of the sealing resin is 32 to 58 g / as a material capable of reducing the stress generated by the moisture absorption component contained in the sealing resin. The range is m ² .

  According to a sixth aspect of the present invention, a semiconductor element and a circuit board are electrically joined to each other via a bump formed on an electrode of the semiconductor element and a wiring provided on the circuit board. In a semiconductor device in which a sealing resin is interposed between circuit boards, the amount of inorganic filler added to the resin material of the sealing resin is a material that can reduce the stress generated by the moisture absorption component contained in the sealing resin. The range is 40 to 60 w%.

  According to the seventh aspect of the present invention, when the bump on the semiconductor element electrode is electrically bonded to the wiring provided on the circuit board via the sealing resin, the corner of the semiconductor element mounting region on the circuit board is formed. Forming a through hole, and heating the semiconductor element, the circuit board, or the sealing resin to add the semiconductor element and the circuit board while dehumidifying moisture contained in the sealing resin from the through hole. The sealing resin is cured and the bumps of the semiconductor element are bonded to the wiring of the circuit board.

  According to an eighth aspect of the present invention, after the closing resin is filled in the through hole, heating and dehumidification are performed while applying pressure and bonding, and the sealing resin prevents leakage of the sealing resin.

  In the invention according to claim 9, after the opening portion of the through hole on the opposite surface to the mounting surface of the semiconductor element is covered with a closing sheet-like resin film, it is heated and dehumidified to be pressed and bonded, The sealing resin sheet prevents leakage of the sealing resin from the through hole.

In the invention according to claim 10, when the bumps on the semiconductor element electrode are electrically bonded to the wiring provided on the circuit board through the sealing resin, the moisture permeability of the resin material of the sealing resin is 32 g / m ² or more and 58 g / m ² or less, and heating the semiconductor element, the circuit board, or the sealing resin to dehumidify moisture absorbed in the sealing resin, Is applied to cure the sealing resin to bond the bumps of the semiconductor element and the wiring of the circuit board.

  The invention according to claim 11 is a method of electrically bonding the bumps on the semiconductor element electrodes to the wiring provided on the circuit board through the sealing resin, and the amount of the inorganic filler in the resin material of the sealing resin. The semiconductor element and the circuit board are pressed while heating any one of the semiconductor element, the circuit board, and the sealing resin to dehumidify the moisture absorption water contained in the sealing resin. The sealing resin is cured to bond the bumps of the semiconductor element and the wiring of the circuit board.

  In the invention of claim 12, the heating temperature of the sealing resin at the time of pressure bonding of the semiconductor element is in the range of 240 to 280 ° C.

  According to the present invention, the moisture absorption moisture of the sealing resin is effectively dehumidified at the time of heating and pressure bonding, so that the mounting portion is destroyed due to the rapid volume expansion of moisture absorption moisture, or the semiconductor device is bonded to the junction. The load can be suppressed and the quality is not reduced.

  According to the invention of claim 1, 2 or 7, by forming a through hole in the corner of the mounting region corresponding to the corner of the semiconductor element that is easily destroyed by rapid expansion of moisture absorption during soldering reflow, Dehumidification from the sealing resin can be performed effectively, and the mounting portion of the circuit board can be prevented from being destroyed.

  According to invention of Claim 3 or 8, it can prevent that sealing resin leaks outside from a through-hole by the resin for obstruction | occlusion at the time of soldering reflow.

  According to invention of Claim 4 or 9, it can prevent that sealing resin leaks outside from a through-hole by the sheet-like resin film for closure at the time of soldering reflow.

According to the invention of claim 5 or 10, by making the moisture permeability of the sealing resin 32 g / m ² or more and 58 g / m ² or less, it is easy to dehumidify moisture from the sealing resin, It is possible to prevent the mounting portion from being broken and the quality of the joint portion of the semiconductor device from being deteriorated due to rapid volume expansion of moisture absorption moisture.

  According to invention of Claim 6 or 11, the reflow connection reliability especially after moisture absorption can be improved by the amount of inorganic fillers of the resin material of sealing resin being 40-60 w%.

  According to the twelfth aspect of the present invention, by setting the heating temperature of the sealing resin to 240 to 280 ° C., the crosslink density at the time of resin curing is lowered, and the dehumidification of the semiconductor device from the sealing resin is facilitated. Can do.

(A)-(e) shows the semiconductor element concerning the 1st Embodiment of this invention, and the mounting method of the semiconductor element to a circuit board, (a1) is side sectional drawing of a semiconductor element, (a2) is a semiconductor The bottom view of the element, (a3) is an enlarged bottom view of the corner portion of the semiconductor element, (b) to (d) and (e1) are side sectional views showing how to mount the semiconductor element on the circuit board, and (e2) is It is the elements on larger scale of (e1). (A)-(c) shows the semiconductor device which concerns on the 2nd Embodiment of this invention, (a) is side surface sectional drawing of a semiconductor element mounting state, (b) is the principal part enlarged view of (a), (C) is an enlarged plan view of a corner portion of a semiconductor element mounting region. It is a partial expanded sectional view of the principal part which shows the 1st modification of the semiconductor device which concerns on 2nd Embodiment. It is a partial expanded sectional view of the principal part which shows the 2nd modification of the semiconductor device which concerns on 2nd Embodiment. (A)-(e2) shows the semiconductor element which concerns on 3rd thru | or 5th Embodiment, and the mounting method of the semiconductor element to a circuit board, (a1) is side sectional drawing of a semiconductor element, (a2) is a semiconductor The bottom view of an element, (b)-(d) (e1) is side sectional drawing which shows the mounting method of the semiconductor element to a circuit board, respectively, (e2) is the elements on larger scale of the principal part of (e1). (A)-(e2) each shows the conventional semiconductor element and the mounting method of the semiconductor element to a circuit board, (a1) is side surface sectional drawing of a semiconductor element, (a2) is a bottom view of a semiconductor element, (b) (D) and (e1) are side sectional views showing a method of mounting a semiconductor element on a circuit board, respectively, and (e2) is a partially enlarged view of the main part of (e1).

  Embodiments of a semiconductor device and a mounting method thereof according to the present invention will be described below with reference to FIGS.

(First embodiment)
First, a first embodiment of a semiconductor device and its mounting method will be described with reference to FIG. In the first embodiment, the structure capable of reducing the stress generated by the moisture absorption component contained in the resin sheet 5 due to the temperature rise during soldering is constituted by the through hole 11 formed in the semiconductor element 1. Has been.

  1A to 1E show a method for mounting a semiconductor element on a circuit board and a structure.

  As shown in FIGS. 1 (a1) to (a3), the semiconductor element 1 has a thickness of 0.4 mm and a size of 12 mm × 12 mm, for example, and has through holes 11 at four corners. These through-holes 11 have centers at corners within a distance x1 = 0.6 mm and y1 = 0.6 mm from two adjacent sides, and have an inner diameter d1 of, for example, 0.3 mm.

  The minimum pitch of the bumps 2 formed on the electrodes of the semiconductor element 1 is 120 μm, and gold bumps are formed as the bumps 2 by a stud bump formation method. The base size of the bumps 2 is 80 μm.

  Here, the through hole 11 may be formed in at least one of the four corners. Of course, the through holes 11 may be formed in areas other than the four corners, but there is no region where the through holes 11 can be formed in areas other than the four corners of the semiconductor element 1. Further, the reason why the position of the through hole 11 is within the distance x1 = 0.6 mm and y1 = 0.6 mm from the two adjacent sides is that when the distance x1 and y1 are exceeded, the IC active region is entered. Further, the inner diameter d1 of the through hole 11 is effectively in the range of 0.1 to 0.5 mm. This is because the through-hole 11 cannot be drilled when the inner diameter d1 is less than 0.1 mm, and when the inner diameter d1 exceeds 0.5 mm, resin leakage of the resin sheet 5 described later occurs. A plurality of through holes 11 may be formed at one corner.

  As shown in FIG. 1B, the circuit board 3 is a ceramic substrate having alumina as a main component (96 wt%) and has a thickness of 0.4 mm. The electrode 4 formed on the circuit board 3 is made of tungsten, and the surface thereof is plated with gold. A resin sheet (sealing resin) 5 mainly composed of an epoxy resin having a thickness of 60 μm is attached to the circuit board 3 in a mounting region of the semiconductor element 1. The resin sheet 5 is attached with a heating temperature of 80 ° C. and a pressurization time of 3 seconds.

  As shown in FIG. 1C, the electrodes 4 of the circuit board 3 and the bumps 2 of the semiconductor element 1 are aligned so as to contact each other, and then mounted by a mounting head. At the time of mounting, the stage temperature for holding the circuit board 3 and the mounting head temperature are set to room temperature.

  As shown in FIG. 1D, the crimping tool 7 heats the semiconductor element 1 from the upper surface to a temperature of 260 ° C. and pressurizes it for 20 seconds to connect the electrodes 4 of the circuit board 3 and the bumps 2 of the semiconductor element 1. The resin sheet 5 having a sealing function is simultaneously cured. The connection resistance value at this time is 10Ω / bump.

  FIGS. 1E1 and 1E2 show the structure of a semiconductor device on which the semiconductor element 1 is mounted.

  According to the first embodiment, the through holes 11 formed in the corners of the semiconductor element 1 allow the moisture absorbing component of the resin sheet 5 to escape well through the through holes 11, and the volume by the moisture absorbing component. Generation of stress due to expansion can be suppressed. Further, the remaining stress can be absorbed by the through hole 11. Therefore, it is possible to prevent damage to the mounting part and deterioration of the joint quality due to soldering reflow, improve connection reliability, eliminate the need for a drying process and high-precision humidity management, and reduce the manufacturing cost of semiconductor devices. it can.

  Table 1 shows the results of performing a reflow test of a semiconductor device manufactured by the above mounting method (test for heat treatment by reflow after moisture absorption in a constant environment: JEDEC levels 1 to 3 are standard, this evaluation is level 2) Show.

ここで評価レベルの条件は、吸湿条件が８５℃、１６５％−１６８時間放置後、リフロー（２４０℃以上、１０秒）である。上記実験によれば、全体に良好な結果を得た。

The condition of the evaluation level is reflow (240 ° C. or more, 10 seconds) after leaving the moisture absorption condition at 85 ° C. and 165% -168 hours. According to the above experiment, good results were obtained overall.

(Second Embodiment)
A semiconductor device and a method for mounting a semiconductor element on a circuit board according to the second embodiment will be described with reference to FIG. In the second embodiment, the structure capable of reducing the stress generated by the hygroscopic component contained in the resin sheet 5 due to the temperature rise during soldering is constituted by the through hole 21 formed in the circuit board 3. Has been. Note that the same members as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIGS. 2A to 2C, this semiconductor device is mounted using the semiconductor element 1 that does not have the through hole under the same conditions as those in the first embodiment.

  That is, the through holes 21 are formed in the four corners of the semiconductor element mounting region 3a of the circuit board 3 to which the resin sheet (sealing resin) 5 is attached. These through holes 21 have a center within a distance x2 = 0.6 mm and y2 = 0.6 mm from two adjacent sides of the semiconductor element mounting region 3a, and have an inner diameter d2 of, for example, 0.3 mm.

  Here, the through hole 21 may be at least one of the four corners of the semiconductor element mounting region 3 a of the circuit board 3. The positions of the through holes 21 are within the distance x2 = 0.6 mm and y2 = 0.6 mm from the two adjacent sides because the IC active region is entered when the distances x2 and y2 are exceeded. Further, the inner diameter d2 of the through hole 21 is effectively in the range of 0.1 to 0.5 mm. This is because the through hole 21 cannot be drilled when the inner diameter d2 is less than 0.1 mm, and when the inner diameter d2 exceeds 0.5 mm, resin leakage of the resin sheet 5 occurs. A plurality of through holes 21 may be formed at one corner.

  According to the second embodiment, the through-holes 21 formed in the corners of the semiconductor element mounting region 3a of the circuit board 3 can favorably release the moisture absorption component of the resin sheet 5, and the volume due to the moisture absorption component. Generation of stress due to expansion can be suppressed. Further, the remaining stress can be absorbed by the through hole 21. Therefore, it is possible to prevent damage to the mounting part and deterioration of the joint quality due to soldering reflow, improve connection reliability, eliminate the need for a drying process and high-precision humidity management, and reduce the manufacturing cost of semiconductor devices. it can.

  Table 2 shows the results of performing a reflow test of a semiconductor device manufactured by the above mounting method (test to heat-treat by reflow after absorbing moisture in a constant environment: JEDEC levels 1 to 3 are standard, this evaluation is level 2) Show.

ここで評価レベルの条件は、吸湿条件が８５℃、１６５％−１６８時間放置後、リフロー（２４０℃以上、１０秒）である。

The condition of the evaluation level is reflow (240 ° C. or more, 10 seconds) after leaving the moisture absorption condition at 85 ° C. and 165% -168 hours.

  According to the above experiment, the connection reliability in the moisture absorption reflow test could be improved by providing the through hole 21 in the circuit board 3. The connection resistance value per connection at this time was 10Ω / bump.

  FIG. 3 shows a first modification of the second embodiment, and shows a structure in which the through hole 21 is filled with a closing resin 22 in order to prevent leakage of the sealing resin of the resin sheet 5. Thereby, it can replace with the resin sheet 5 which is sealing resin, and can prevent the resin leak from the through-hole 21, even when liquid resin is used.

  FIG. 4 shows a second modification of the second embodiment. In order to prevent leakage of the sealing resin, the surface opposite to the mounting surface of the through hole 21 is closed with a blocking resin sheet (blocking sheet-like resin film). ) 23 shows the structure covered. Thereby, even if it replaces with the resin sheet 5 and uses liquid resin as sealing resin, the resin sheet 23 for closure can prevent the resin leak from the through-hole 21. FIG.

(Third embodiment)
A semiconductor device and a semiconductor element mounting method according to a third embodiment of the present invention will be described. In the third embodiment, the material capable of reducing the stress generated by the moisture absorption component contained in the resin sheet 5 due to the temperature rise during soldering is configured by selecting the moisture permeability of the resin sheet 5. Has been. Note that the same members as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

As shown in FIG. 5, using the semiconductor element 1 and the circuit board 3 that do not have the through holes 11 and 21 and the resin sheet 5 having different moisture permeability in the first and second embodiments, The semiconductor element is mounted under conditions. In this experiment, the moisture permeability of the resin sheet 5 was selected within the range of 17 to 65 g / m ² .

  Here, the resin sheet 5 is a thermosetting resin, and an epoxy resin is selected. For example, this epoxy resin has bisphenol A and F as the main components, and is added with butadiene rubber, acrylonitrile, and acryl, which are acrylic-modified epoxy or thermoplastic resin, as a moisture permeability improver.

表３にリフロー試験による樹脂シート５の透湿度条件とその結果を示している。樹脂シート５の透湿度を３２〜５８ｇ／ｍ²の範囲内として脱湿構造とすることにより、吸湿リフロー試験における接続信頼性を向上することができた。

Table 3 shows the moisture permeability conditions of the resin sheet 5 and the results of the reflow test. By making the moisture permeability of the resin sheet 5 in the range of 32 to 58 g / m ² and adopting a dehumidifying structure, connection reliability in the moisture absorption reflow test could be improved.

According to the said 3rd Embodiment, the moisture absorption component of the resin sheet 5 can be escaped favorably by making the moisture-removal structure of the resin sheet 5 into the range of 32-58 g / m < ² > of moisture permeability. In addition, it is possible to suppress the generation of stress caused by the volume expansion generated by the hygroscopic component. Therefore, it is possible to prevent damage to the mounting part and deterioration of the joint quality due to soldering reflow, improve connection reliability, eliminate the need for a drying process and high-precision humidity management, and reduce the manufacturing cost of semiconductor devices. it can.

(Fourth embodiment)
A semiconductor device and a semiconductor element mounting method according to a fourth embodiment of the present invention will be described. The material capable of reducing the stress generated by the moisture absorption component contained in the resin sheet 5 due to the temperature rise during soldering is configured by selecting the amount of inorganic filler added to the resin sheet 5 and adjusting the moisture absorption amount Has been. Note that the fourth embodiment is the same as that in FIG. 5, and the same members as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

  In the semiconductor device, the semiconductor element 1 not having the through hole 11 was mounted under the same conditions as in the first embodiment. By adding 40-60 wt% of an inorganic filler that hardly absorbs moisture to the resin sheet 5 having a sealing function, the amount of resin that absorbs moisture in the entire sheet is reduced, and the amount of moisture absorbed in the entire resin sheet 5 is reduced. Yes.

The resin sheet 5 is a thermosetting resin, and an epoxy resin is selected. For example, this epoxy resin is mainly composed of bisphenol A and F and added with butadiene rubber, acrylonitrile, or acrylic resin, which is an acrylic-modified epoxy or thermoplastic resin, as a moisture permeability improver. Silica SiO ₂ or alumina Al ₂ O ₃ is used as the inorganic filler. The connection resistance value per connection at this time was 10Ω / bump.

表４にリフロー試験の条件と結果を示している。樹脂シート５の吸湿量を無機フィラーをより減少させることで、吸湿リフロー試験における接続信頼性を向上することができた。

Table 4 shows the reflow test conditions and results. The connection reliability in the moisture absorption reflow test could be improved by further reducing the amount of moisture absorption of the resin sheet 5 with the inorganic filler.

  According to the fourth embodiment, by setting the inorganic filler added to the resin sheet 5 to a ratio of 40 to 60 wt%, the moisture absorption amount of the resin sheet 5 is greatly reduced, resulting from volume expansion due to moisture absorption components. Generation of stress can be suppressed. Therefore, it is possible to prevent damage to the mounting part and deterioration of the joint quality due to soldering reflow, improve connection reliability, eliminate the need for a drying process and high-precision humidity management, and reduce the manufacturing cost of semiconductor devices. it can.

(Fifth embodiment)
A fifth embodiment of a semiconductor device and a semiconductor element mounting method according to the present invention will be described. In the fifth embodiment, as a method capable of reducing the stress generated by the hygroscopic component contained in the resin sheet 5 due to the temperature rise during soldering, the pressure bonding temperature condition between the semiconductor element 1 and the circuit board 3 can be reduced. Is selected. Note that the same members as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

This semiconductor device uses a crimping tool 7 to bond the semiconductor element 1 and the circuit board 3 that do not have the through holes 11 and 21 according to the first and second embodiments to a temperature range of 200 to 320 ° C. The resin sheet 5 is manufactured by pressure bonding (heating) with a pressure (heating) time of 20 seconds. As shown in Table 3, the resin sheet 5 has a moisture permeability of 17 to 65 g / m ^2. Is selected. At this time, the connection of the electrodes 4 of the ceramic circuit board 3 and the bumps 2 on the semiconductor element 1 and the curing of the resin sheet 5 having a sealing function are performed simultaneously. The connection resistance value per connection at this time was 10Ω / bump.

  Table 3 shows the moisture permeability conditions and the results of the resin sheet 5 by the reflow test of the semiconductor device.

  According to Table 3, the connection reliability in the moisture absorption reflow test could be improved when the pressure bonding temperature was 240 to 280 ° C. Here, when the pressure bonding temperature is less than 240 ° C., the stress during reflow heating is large, and there is a possibility that the mounting portion may be broken or the quality of the bonded portion may be deteriorated. This is because the stress of becomes too large.

  The pressurization time is 20 seconds, but the pressurization time is preferably in the range of 5 to 30 seconds. If the pressurization time is less than 5 seconds, the resin sheet 5 is not sufficiently cured, and if it exceeds 30 seconds, the productivity decreases. Because it does.

According to the fifth embodiment, the moisture permeability of the resin sheet 5 is in the range of 32 to 58 g / m ² , and the pressure bonding temperature condition between the semiconductor element 1 and the circuit board 3 is in the range of 240 to 280 ° C. Thereby, the moisture absorption component of the resin sheet 5 can be escaped favorably, and the generation of stress due to volume expansion due to the moisture absorption component can be suppressed. Therefore, it is possible to prevent damage to the mounting part and deterioration of the joint quality due to soldering reflow, improve connection reliability, eliminate the need for a drying process and high-precision humidity management, and reduce the manufacturing cost of semiconductor devices. it can.

  The first to fifth embodiments can be arbitrarily selected and combined.

  In the semiconductor device and the mounting method thereof according to the present invention, the moisture absorption moisture of the sealing resin is effectively dehumidified at the time of heating and pressure bonding. The load on the junction of the device can be suppressed, and the quality is not deteriorated. For example, it is useful for a CSP type semiconductor device. For example, it is useful for a driver of a semiconductor device such as a liquid crystal module used in a mobile device such as a mobile phone terminal.

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Bump 3 Circuit board 4 Electrode 5 Resin sheet 7 Crimping tool 11 Through hole 21 Through hole 22 Closing resin 23 Closing resin sheet (closing sheet-like resin film)

Claims (12)

A semiconductor element and a circuit board are electrically bonded via bumps formed on the electrodes of the semiconductor element and wirings provided on the circuit board, and a sealing resin is provided between the semiconductor element and the circuit board. In a semiconductor device interposing
The structure capable of reducing the stress generated by the hygroscopic component contained in the sealing resin is constituted by a through hole formed in the circuit board, and the position of the through hole is at the corner of the semiconductor element mounting region of the circuit board. A semiconductor device formed.   The structure capable of reducing the stress generated by the moisture absorption component is constituted by a through hole formed in the circuit board, and the position of the through hole is within 0.6 mm from two adjacent sides of the semiconductor element mounting region of the circuit board. 2. The semiconductor device according to claim 1, wherein the semiconductor device is formed at a corner.   3. The semiconductor device according to claim 1, wherein the through hole is filled with a closing resin for preventing leakage of the sealing resin.   The opening of the through hole on the surface opposite to the mounting surface of the semiconductor element is covered with a closing sheet-like resin film that prevents leakage of the sealing resin. Semiconductor device. A semiconductor element and a circuit board are electrically bonded via bumps formed on the electrodes of the semiconductor element and wirings provided on the circuit board, and a sealing resin is provided between the semiconductor element and the circuit board. In a semiconductor device interposing
A semiconductor device characterized in that the moisture permeability of the resin material of the sealing resin is in the range of 32 to 58 g / m ² as a material capable of reducing the stress generated by the moisture absorption component contained in the sealing resin. A semiconductor element and a circuit board are electrically bonded via bumps formed on the electrodes of the semiconductor element and wirings provided on the circuit board, and a sealing resin is provided between the semiconductor element and the circuit board. In a semiconductor device interposing
A semiconductor device characterized in that the amount of inorganic filler added to the resin material of the sealing resin is in the range of 40 to 60 w% as a material capable of reducing the stress generated by the moisture absorption component contained in the sealing resin. . When electrically connecting the bumps on the semiconductor element electrode on the wiring provided on the circuit board via the sealing resin,
In the corner of the semiconductor element mounting area on the circuit board, through holes are formed,
Either the semiconductor element, the circuit board, or the sealing resin is heated to pressurize the semiconductor element and the circuit board while dehumidifying moisture contained in the sealing resin from the through hole, and the sealing resin is cured. A semiconductor device mounting method comprising bonding a bump of a semiconductor element and a wiring of a circuit board.   8. The semiconductor device according to claim 7, wherein the through hole is filled with a closing resin, and then heated and dehumidified and pressurized and bonded, and the sealing resin prevents leakage of the sealing resin. How to implement   The opening of the through hole on the surface opposite to the mounting surface of the semiconductor element is covered with a closing sheet-like resin film, and then heated and dehumidified to pressurize and join, and penetrated by the closing sheet-like resin film 8. The semiconductor device mounting method according to claim 7, wherein leakage of the sealing resin from the hole is prevented. When electrically connecting the bumps on the semiconductor element electrode on the wiring provided on the circuit board via the sealing resin,
The moisture permeability of the resin material of the sealing resin is 32 g / m ² or more and 58 g / m ² or less,
The semiconductor element, the circuit board, or the sealing resin is heated to dehumidify moisture contained in the sealing resin and pressurize the semiconductor element and the circuit board to cure the sealing resin. A method of mounting a semiconductor device, comprising bonding a bump and a wiring of a circuit board. When electrically connecting the bumps on the semiconductor element electrode on the wiring provided on the circuit board via the sealing resin,
The amount of inorganic filler in the resin material of the sealing resin is in the range of 40 to 60 w%,
The semiconductor element, the circuit board, or the sealing resin is heated to dehumidify moisture contained in the sealing resin and pressurize the semiconductor element and the circuit board to cure the sealing resin. A method of mounting a semiconductor device, comprising bonding a bump and a wiring of a circuit board. The method for mounting a semiconductor device according to claim 10, wherein the heating temperature of the sealing resin at the time of pressure bonding of the semiconductor element is in a range of 240 to 280 ° C.

Images