JP2010034575A - Device for evaluating semiconductor laser - Google Patents

Device for evaluating semiconductor laser Download PDF

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JP2010034575A
JP2010034575A JP2009248375A JP2009248375A JP2010034575A JP 2010034575 A JP2010034575 A JP 2010034575A JP 2009248375 A JP2009248375 A JP 2009248375A JP 2009248375 A JP2009248375 A JP 2009248375A JP 2010034575 A JP2010034575 A JP 2010034575A
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semiconductor laser
ground
conductor plates
probe
evaluation apparatus
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JP4515536B2 (en
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Yasuhiro Yamauchi
康寛 山内
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To measure a high-frequency characteristic even for a semiconductor laser where a signal electrode and a ground electrode are not positioned on the same plane. <P>SOLUTION: The device for evaluating a semiconductor laser is structured such that, when the semiconductor laser 1 is mounted on a ground stage 2 and the semiconductor laser 1 is sandwiched between two conductor plates 3 and 4 from both its sides, the upper surface of the semiconductor 1 and the upper surfaces of the two conductor plate 3 and 4 are set on the same plane, and a signal terminal of a probe and a ground terminal of the probe are brought into contact with a signal electrode of the semiconductor laser 1 and the upper surface of the conductor plate 3 or 4, respectively. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

この発明は、半導体レーザの高周波特性をチップもしくはサブマウント状態で測定する半導体レーザ評価装置に関するものである。   The present invention relates to a semiconductor laser evaluation apparatus for measuring high-frequency characteristics of a semiconductor laser in a chip or submount state.

光通信分野等で使用される半導体レーザは、高周波変調時の特性評価が必要であるが、一方、デバイスの低価格化に伴うテストコストの削減には、チップ状態での高精度な選別が不可欠である。
図８は従来の半導体レーザの形状を示す斜視図であり、図において、３１は表面に設けられた信号電極、３２は裏面にパターニングされた接地電極、３３は発光点であり、矢印は発光方向を表している。このような形状を持つ半導体レーザは、信号電極３１及び接地電極３２が素子の表裏にあるため、両電極間にチップ厚みの分の段差が生じ、高周波でのインピーダンスが取れず、チップ状態では高周波での測定が正確にできない問題があった。 Semiconductor lasers used in the field of optical communications, etc. need to be evaluated at the time of high-frequency modulation. On the other hand, high-precision selection in the chip state is indispensable for reducing test costs associated with lower device costs. It is.
FIG. 8 is a perspective view showing the shape of a conventional semiconductor laser. In the figure, 31 is a signal electrode provided on the front surface, 32 is a ground electrode patterned on the back surface, 33 is a light emitting point, and an arrow is a light emitting direction. Represents. In the semiconductor laser having such a shape, since the signal electrode 31 and the ground electrode 32 are on the front and back of the element, a step corresponding to the chip thickness is generated between both electrodes, and high frequency impedance cannot be obtained. There was a problem that could not be measured accurately.

従来の半導体レーザ評価装置は以上のように構成されているので、信号電極と接地電極が同一平面上にない半導体レーザでは、高周波信号源とのインピーダンス整合が取れず、高周波変調時の特性を高精度に測定することができないという問題点があった。   Since the conventional semiconductor laser evaluation apparatus is configured as described above, a semiconductor laser in which the signal electrode and the ground electrode are not on the same plane cannot achieve impedance matching with a high-frequency signal source and has high characteristics during high-frequency modulation. There was a problem that it could not be measured accurately.

この発明は上記のような問題点を解消するためになされたもので、信号電極と接地電極が同一平面上にない半導体レーザであっても、高周波特性を測定することが可能な半導体レーザ評価装置を提供することを目的とする。   The present invention has been made to solve the above problems, and a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics even in a semiconductor laser in which a signal electrode and a ground electrode are not on the same plane. The purpose is to provide.

この発明の請求項１に係る半導体レーザ評価装置は、接地ステージ上に、同じ高さを有する２つの導体プレートを電気的接触を保って配置するとともに、表面に信号電極かつ裏面に接地電極を設けた所定厚みの半導体レーザを上記２つの導体プレートの間に挟み込むことにより上記半導体レーザの評価を行う半導体レーザ評価装置であって、上記半導体レーザを上記接地ステージ上に載置すると共に上記２つの導体プレートを上記半導体レーザの両側から挟み込んだときには、上記半導体レーザの上面と上記２つの導体プレートの上面とが同一平面上にあるように構成し、上記半導体レーザの信号電極にプローブの信号端子を、上記導体プレートの上面に上記プローブの接地端子を接触させたものである。   In the semiconductor laser evaluation apparatus according to claim 1 of the present invention, two conductor plates having the same height are arranged on the ground stage while maintaining electrical contact, and a signal electrode is provided on the front surface and a ground electrode is provided on the back surface. A semiconductor laser evaluation apparatus for evaluating a semiconductor laser by sandwiching a semiconductor laser having a predetermined thickness between the two conductor plates, the semiconductor laser being placed on the ground stage and the two conductors When the plate is sandwiched from both sides of the semiconductor laser, the upper surface of the semiconductor laser and the upper surface of the two conductor plates are on the same plane, and the signal terminal of the probe is connected to the signal electrode of the semiconductor laser, The ground terminal of the probe is brought into contact with the upper surface of the conductor plate.

この発明の請求項２に係る半導体レーザ評価装置は、接地ステージ上に、同じ高さを有する２つの導体プレートを配置するとともに、表面に信号電極かつ裏面に接地電極を設け更に上記裏面に設けられた上記接地電極にサブマウントを接着した所定厚みの半導体レーザを上記２つの導体プレートの間に挟み込むことにより上記半導体レーザの評価を行う半導体レーザ評価装置であって、上記２つの導体プレートの下面に上記サブマウントの厚み分の切り取り部を設け、上記サブマウントを上記接地ステージ上に載置すると共に上記２つの導体プレートを上記サブマウントとの電気的接触を保ちながら上記半導体レーザの両側から挟み込んだときには、上記半導体レーザの上面と上記２つの導体プレートの上面とが同一平面上にあるように構成し、更に上記半導体レーザの信号電極にプローブの信号端子を、上記導体プレートの上面に上記プローブの接地端子を接触させたものである。   According to a second aspect of the present invention, there is provided the semiconductor laser evaluation apparatus according to the present invention, wherein two conductor plates having the same height are arranged on the ground stage, the signal electrode is provided on the front surface, the ground electrode is provided on the back surface, and the back surface is provided. A semiconductor laser evaluation apparatus for evaluating the semiconductor laser by sandwiching a semiconductor laser having a predetermined thickness with a submount bonded to the ground electrode between the two conductor plates, the semiconductor laser evaluation device being formed on a lower surface of the two conductor plates. A cut-out portion corresponding to the thickness of the submount is provided, the submount is placed on the ground stage, and the two conductor plates are sandwiched from both sides of the semiconductor laser while maintaining electrical contact with the submount. Sometimes, the upper surface of the semiconductor laser and the upper surfaces of the two conductor plates are on the same plane. , And further the signal terminals of the probe to the signal electrode of the semiconductor laser, is brought into contact with the ground terminal of the probe to the upper surface of the conductor plate.

この発明によれば、信号電極と接地電極が同一平面上にない半導体レーザであっても、高周波特性を測定することが可能な半導体レーザ評価装置を提供できる。   According to the present invention, it is possible to provide a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics even with a semiconductor laser in which the signal electrode and the ground electrode are not on the same plane.

この発明の実施の形態１による半導体レーザ評価装置を示す斜視図である。It is a perspective view which shows the semiconductor laser evaluation apparatus by Embodiment 1 of this invention. この発明の実施の形態１による半導体レーザ評価装置を示す斜視図である。It is a perspective view which shows the semiconductor laser evaluation apparatus by Embodiment 1 of this invention. この発明の実施の形態２による半導体レーザ評価装置を示す平面図である。It is a top view which shows the semiconductor laser evaluation apparatus by Embodiment 2 of this invention. この発明の実施の形態３による半導体レーザ評価装置を示す平面図である。It is a top view which shows the semiconductor laser evaluation apparatus by Embodiment 3 of this invention. この発明の実施の形態４によるプローブを示す斜視図である。It is a perspective view which shows the probe by Embodiment 4 of this invention. この発明の実施の形態５による半導体レーザ評価装置を示す側面図である。It is a side view which shows the semiconductor laser evaluation apparatus by Embodiment 5 of this invention. この発明の実施の形態６による半導体レーザ評価装置を示す斜視図である。It is a perspective view which shows the semiconductor laser evaluation apparatus by Embodiment 6 of this invention. 従来の半導体レーザを示す斜視図である。It is a perspective view which shows the conventional semiconductor laser.

実施の形態１．
以下、この発明の一実施形態を図について説明する。図１はこの発明の実施の形態１による高周波特性が測定可能な半導体レーザ評価装置を示す斜視図であり、図において、１は半導体レーザ、１ａは半導体レーザ１の発光点、１ｂは半導体レーザ１の表面に設けられた信号電極、２は接地ステージ、３，４は半導体レーザ１と高精度に同じ厚みを持つよう加工された導体プレートである。導体プレート３，４は、半導体レーザ１を両側から挟み込む形で、接地ステージ２上に電気的接触を保って配置され、更に導体プレート３，４は、半導体レーザ１の発光点の位置精度を合わせる目的も兼ねている。 Embodiment 1 FIG.
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 1 is a perspective view showing a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics according to Embodiment 1 of the present invention. In FIG. 1, 1 is a semiconductor laser, 1a is a light emitting point of a semiconductor laser 1, and 1b is a semiconductor laser 1. Signal electrodes 2 are provided on the surface of the substrate 2, a grounding stage 2, and 3 and 4 are conductor plates processed to have the same thickness as the semiconductor laser 1 with high accuracy. The conductor plates 3 and 4 are disposed on the ground stage 2 so as to sandwich the semiconductor laser 1 from both sides, and the conductor plates 3 and 4 further match the positional accuracy of the light emitting point of the semiconductor laser 1. It also serves a purpose.

また、半導体レーザ１を両側から挟み込む構造は、半導体レーザ１の裏面光の採光を可能にし、裏面光に対する特性評価を可能にする。
接地ステージ２及び導体プレート３，４は、マイクロ波帯の高周波信号を良好に伝達するため、金などの材質を使用する必要がある。この構造により接地面を導体プレート３，４の上面まで延長することができる。導体プレート３，４は半導体レーザ１と高精度に厚みを同じくしているため、図２に示すように、一般的なＧＳＧ（接地―信号−接地）構造やＳＧ構造を持つ高周波プローブによる高周波コンタクトが可能となる。図２において、５は接地―信号−接地構造を持つ高周波プローブである。 In addition, the structure in which the semiconductor laser 1 is sandwiched from both sides enables the back light of the semiconductor laser 1 to be collected and the characteristics of the back light can be evaluated.
The ground stage 2 and the conductor plates 3 and 4 need to use a material such as gold in order to satisfactorily transmit a microwave band high-frequency signal. With this structure, the ground plane can be extended to the upper surfaces of the conductor plates 3 and 4. Since the conductor plates 3 and 4 have the same thickness as the semiconductor laser 1 with high accuracy, as shown in FIG. 2, a high frequency contact by a high frequency probe having a general GSG (ground-signal-ground) structure or SG structure is used. Is possible. In FIG. 2, 5 is a high-frequency probe having a ground-signal-ground structure.

実施の形態２．
図３はこの発明の実施の形態２による高周波特性が測定可能な半導体レーザ評価装置を示す平面図であり、図において、２は接地ステージ、３，４は導体プレート、６は接地ステージ２上の半導体レーザ配置箇所に埋め込んだ、抵抗，容量，インダクタンス等を持つ受動素子成分である。
受動素子成分６は、半導体レーザの持つインピーダンスを考慮に入れて、高周波信号源とのインピーダンス整合を取るように設計する必要があり、半導体レーザのような抵抗性を示す素子については、抵抗成分を埋め込むことで信号源とのインピーダンス整合を図ることが可能となる。 Embodiment 2. FIG.
3 is a plan view showing a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics according to Embodiment 2 of the present invention. In the figure, 2 is a ground stage, 3 and 4 are conductor plates, and 6 is on the ground stage 2. It is a passive element component having resistance, capacitance, inductance, etc., embedded in a semiconductor laser arrangement location.
The passive element component 6 needs to be designed so as to achieve impedance matching with the high-frequency signal source in consideration of the impedance of the semiconductor laser. By embedding, impedance matching with the signal source can be achieved.

実施の形態３．
図４はこの発明の実施の形態３による高周波特性が測定可能な半導体レーザ評価装置を示す平面図であり、図において、２は接地ステージ、３，４は導体プレート、７は導体プレート３，４上の高周波プローブコンタクト位置に埋め込んだ、抵抗，容量，インダクタンス等を持つ受動素子成分である。
受動素子成分７は、半導体レーザの持つインピーダンスを考慮に入れて、高周波信号源とのインピーダンス整合を取るように設計する必要があり、半導体レーザのような抵抗性を示す素子については、抵抗成分を埋め込むことで信号源とのインピーダンス整合を図ることが可能となる。 Embodiment 3 FIG.
4 is a plan view showing a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics according to Embodiment 3 of the present invention. In FIG. 4, 2 is a ground stage, 3 and 4 are conductor plates, and 7 is conductor plates 3 and 4. It is a passive element component having resistance, capacitance, inductance, etc., embedded in the above high frequency probe contact position.
The passive element component 7 needs to be designed so as to obtain impedance matching with the high-frequency signal source in consideration of the impedance of the semiconductor laser. By embedding, impedance matching with the signal source can be achieved.

実施の形態４．
図５はこの発明の実施の形態４による半導体レーザ評価装置にコンタクトを取るための高周波プローブを示す斜視図であり、図において、８は信号源と接続されている高周波ケーブル、９は高周波コネクタ、１０はセラミック等からなる誘電体プレート、１１，１２は接地信号ライン、１３は高周波信号ライン、１４は信号源と被測定物とのインピーダンス整合を取るための抵抗，容量，インダクタンス等を持つ受動素子成分、１５は接地信号ライン１１，１２及び高周波信号ライン１３から被測定物へコンタクトを取るためのプローブ先端部である。 Embodiment 4 FIG.
5 is a perspective view showing a high-frequency probe for making contact with a semiconductor laser evaluation apparatus according to Embodiment 4 of the present invention. In the figure, 8 is a high-frequency cable connected to a signal source, 9 is a high-frequency connector, 10 is a dielectric plate made of ceramic or the like, 11 and 12 are ground signal lines, 13 is a high-frequency signal line, and 14 is a passive element having resistance, capacitance, inductance, etc. for impedance matching between the signal source and the object to be measured. Reference numeral 15 denotes a probe tip for making contact from the ground signal lines 11 and 12 and the high-frequency signal line 13 to the object to be measured.

接地信号ライン１１，１２は高周波コネクタ９の接地部と電気接触を取り、高周波信号ライン１３は高周波コネクタ９の中心の信号ラインと電気接触を取る必要がある。又、接地信号ライン１１，１２及び高周波信号ライン１３は金などのマイクロ波帯良導体により構成される必要があり、分布定数を持つ導波路で構成しても良い。
受動素子成分１４は、半導体レーザの持つインピーダンスを考慮に入れて、高周波信号源とのインピーダンス整合を取るように設計する必要があり、半導体レーザのような抵抗性を示す素子については、抵抗成分を埋め込むことで、信号源とのインピーダンス整合を図ることが可能となる。 The ground signal lines 11 and 12 need to be in electrical contact with the ground portion of the high frequency connector 9, and the high frequency signal line 13 needs to be in electrical contact with the signal line at the center of the high frequency connector 9. The ground signal lines 11 and 12 and the high-frequency signal line 13 need to be made of a good microwave band conductor such as gold, and may be made of a waveguide having a distributed constant.
The passive element component 14 needs to be designed so as to obtain impedance matching with the high-frequency signal source in consideration of the impedance of the semiconductor laser. By embedding, impedance matching with the signal source can be achieved.

実施の形態５．
図６はこの発明の実施の形態５による高周波特性が測定可能な半導体レーザ評価装置を示す側面図であり、図において、１は被測定物である半導体レーザ、２は接地ステージ、１６，１７は下面に切欠きを設けてバネ性を有するようにした導体プレートである。
即ち、導体プレート１６，１７には、半導体レーザ１の厚みのばらつきを吸収し、接地面と高周波信号面を高精度に同一平面にするための板バネ構造を持つよう加工する。 Embodiment 5 FIG.
FIG. 6 is a side view showing a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics according to Embodiment 5 of the present invention. In the figure, 1 is a semiconductor laser as a device to be measured, 2 is a grounding stage, 16 and 17 are It is a conductor plate provided with a notch on the lower surface so as to have a spring property.
That is, the conductor plates 16 and 17 are processed to have a leaf spring structure for absorbing the variation in the thickness of the semiconductor laser 1 and making the ground plane and the high-frequency signal plane on the same plane with high accuracy.

接地ステージ２上の斜線部分は、導体プレート１６，１７との電気接触を取っている部位を示している。半導体レーザ１及び導体プレート１６，１７の上面から図示しない高周波プローブにてコンタクトを行った場合、導体プレート１６，１７がプレート自身の持つバネ性により、半導体レーザ１の上面と高さが同じくなるまで矢印の方向にたわむことで、接地面と信号面の高さを高精度に同じくすることができる。   A hatched portion on the ground stage 2 indicates a portion in electrical contact with the conductor plates 16 and 17. When contact is made from the upper surfaces of the semiconductor laser 1 and the conductor plates 16 and 17 with a high-frequency probe (not shown), the conductor plates 16 and 17 have the same height as the upper surface of the semiconductor laser 1 due to the spring property of the plates themselves. By bending in the direction of the arrow, the height of the ground plane and the signal plane can be made the same with high accuracy.

実施の形態６．
図７はこの発明の実施の形態６による高周波特性が測定可能な半導体レーザ評価装置を示す斜視図であり、図において、１は被測定物である半導体レーザ、２は接地ステージ、１８，１９は下面に切り取り部が設けられている導体プレート、２０は半導体レーザ１を接着しているサブマウント又はブロック等である。
導体プレート１８，１９は、サブマウント２０の厚み分の切り取り部を設け、図７に示されるような斜線部分にてサブマウント２０と接地させるようにする。サブマウント２０には、導体プレート１８，１９の斜線部分において接触可能なように、半導体レーザ１の裏面の接地電極と電気的に接触している構造を取る必要がある。 Embodiment 6 FIG.
FIG. 7 is a perspective view showing a semiconductor laser evaluation apparatus capable of measuring high-frequency characteristics according to Embodiment 6 of the present invention. In the figure, 1 is a semiconductor laser as a device to be measured, 2 is a grounding stage, 18 and 19 are A conductor plate 20 having a cut-out portion on the lower surface, 20 is a submount or block to which the semiconductor laser 1 is bonded.
The conductor plates 18 and 19 are provided with a cutout portion corresponding to the thickness of the submount 20 so as to be grounded to the submount 20 at a hatched portion as shown in FIG. The submount 20 needs to have a structure in which the submount 20 is in electrical contact with the ground electrode on the back surface of the semiconductor laser 1 so as to be able to come into contact with the hatched portions of the conductor plates 18 and 19.

導体プレート１８，１９は、半導体レーザ１と高精度に高さを同じくするよう加工することで、被測定物である半導体レーザ１の接地面と信号面をほぼ同一平面上に配置することができ、ＧＳＧ構造やＳＧ構造を持つ高周波プローブによる高周波コンタクトが可能となる。
更に、インピーダンス整合を取るためには、上記形態による構造に加えて、実施の形態２〜実施の形態４に示した構造を採用することにより実現する。 The conductor plates 18 and 19 are processed so as to have the same height as the semiconductor laser 1 so that the ground plane and the signal plane of the semiconductor laser 1 to be measured can be arranged on substantially the same plane. , High-frequency contact using a high-frequency probe having a GSG structure or SG structure is possible.
Furthermore, impedance matching is realized by adopting the structure shown in the second to fourth embodiments in addition to the structure according to the above embodiment.

１ 半導体レーザ、２ 接地ステージ、
３，４，１６，１７，１８，１９ 導体プレート、５ プローブ、
６，７，１４ 受動素子成分、１１，１２ 接地信号ライン、１３ 高周波信号ライン、２０ サブマウント。 1 semiconductor laser, 2 ground stage,
3, 4, 16, 17, 18, 19 Conductor plate, 5 probe,
6, 7, 14 Passive element component, 11, 12 Ground signal line, 13 High-frequency signal line, 20 Submount.

Claims (5)

接地ステージ上に、同じ高さを有する２つの導体プレートを電気的接触を保って配置するとともに、表面に信号電極かつ裏面に接地電極を設けた所定厚みの半導体レーザを上記２つの導体プレートの間に挟み込むことにより上記半導体レーザの評価を行う半導体レーザ評価装置であって、上記半導体レーザを上記接地ステージ上に載置すると共に上記２つの導体プレートを上記半導体レーザの両側から挟み込んだときには、上記半導体レーザの上面と上記２つの導体プレートの上面とが同一平面上にあるように構成し、上記半導体レーザの信号電極にプローブの信号端子を、上記導体プレートの上面に上記プローブの接地端子を接触させたことを特徴とする半導体レーザ評価装置。 Two conductor plates having the same height are arranged on the ground stage while maintaining electrical contact, and a semiconductor laser having a predetermined thickness provided with a signal electrode on the front surface and a ground electrode on the back surface is disposed between the two conductor plates. A semiconductor laser evaluation apparatus for evaluating the semiconductor laser by being sandwiched between the semiconductor laser and the semiconductor laser when the semiconductor laser is placed on the ground stage and the two conductor plates are sandwiched from both sides of the semiconductor laser. The upper surface of the laser and the upper surfaces of the two conductor plates are arranged on the same plane, and the signal terminal of the probe is brought into contact with the signal electrode of the semiconductor laser, and the ground terminal of the probe is brought into contact with the upper surface of the conductor plate. A semiconductor laser evaluation apparatus. 接地ステージ上に、同じ高さを有する２つの導体プレートを配置するとともに、表面に信号電極かつ裏面に接地電極を設け更に上記裏面に設けられた上記接地電極にサブマウントを接着した所定厚みの半導体レーザを上記２つの導体プレートの間に挟み込むことにより上記半導体レーザの評価を行う半導体レーザ評価装置であって、上記２つの導体プレートの下面に上記サブマウントの厚み分の切り取り部を設け、上記サブマウントを上記接地ステージ上に載置すると共に上記２つの導体プレートを上記サブマウントとの電気的接触を保ちながら上記半導体レーザの両側から挟み込んだときには、上記半導体レーザの上面と上記２つの導体プレートの上面とが同一平面上にあるように構成し、更に上記半導体レーザの信号電極にプローブの信号端子を、上記導体プレートの上面に上記プローブの接地端子を接触させたことを特徴とする半導体レーザ評価装置。 A semiconductor having a predetermined thickness in which two conductor plates having the same height are arranged on a ground stage, a signal electrode is provided on the front surface, a ground electrode is provided on the back surface, and a submount is bonded to the ground electrode provided on the back surface. A semiconductor laser evaluation apparatus for evaluating the semiconductor laser by sandwiching a laser between the two conductor plates, wherein a cut portion having a thickness of the submount is provided on a lower surface of the two conductor plates, When the mount is placed on the ground stage and the two conductor plates are sandwiched from both sides of the semiconductor laser while maintaining electrical contact with the submount, the upper surface of the semiconductor laser and the two conductor plates The top surface is on the same plane, and the probe signal is also connected to the signal electrode of the semiconductor laser. The terminals, the semiconductor laser evaluation device, characterized in that contacting the ground terminals of the probe to the upper surface of the conductor plate. 接地ステージ上の半導体レーザ設置個所に受動素子成分を埋め込んだことを特徴とする請求項１又は請求項２に記載の半導体レーザ評価装置。 3. The semiconductor laser evaluation apparatus according to claim 1, wherein a passive element component is embedded in a semiconductor laser installation location on the ground stage. 導体プレート上のプローブコンタクト位置に受動素子成分を埋め込んだことを特徴とする請求項１又は請求項２に記載の半導体レーザ評価装置。 3. The semiconductor laser evaluation apparatus according to claim 1, wherein a passive element component is embedded in a probe contact position on the conductor plate. プローブにおける接地信号ライン及び高周波信号ラインとの間に受動素子成分を接続させたことを特徴とする請求項１又は請求項２に記載の半導体レーザ評価装置。 3. The semiconductor laser evaluation apparatus according to claim 1, wherein a passive element component is connected between the ground signal line and the high-frequency signal line in the probe.
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JPH10125997A (en) * 1996-10-22 1998-05-15 Matsushita Electric Ind Co Ltd Semiconductor laser module
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JP5987977B2 (en) * 2013-04-25 2016-09-07 株式会社村田製作所 Electronic component testing equipment
US10060970B2 (en) 2013-04-25 2018-08-28 Murata Manufacturing Co., Ltd. Electronic component testing device

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