JP2006214943A - Probe device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure a high frequency electrical characteristic with high accuracy and efficiency by reducing ground inductance and minimizing a return path for a semiconductor integrated circuit element in a wafer state or a bare chip state.
SOLUTION: A ground metal foil 4 that is attached by closing a guide opening 7 formed in an insulating substrate 2 is provided, and each input / output electrode that faces the electrode forming surface 102a of the high-frequency semiconductor element 102 is attached to the ground metal foil 4. A large number of electrode openings 12 facing each of 109 are formed, and a sufficient ground area is secured on the electrode forming surface 102.
[Selection] Figure 1

Description

  The present invention relates to a probe apparatus suitably used when measuring electrical characteristics of a wafer or bare chip high-frequency semiconductor integrated circuit element or the like as an object.

  In various mobile devices such as electronic devices such as personal computers, mobile phones, video devices, and audio devices, miniaturization and weight reduction, multi-functionality, high functionality, etc. have been achieved, and the semiconductor integrated circuit elements to be mounted are extremely high. Strict downsizing and high-precision high-frequency characteristics are required. Semiconductor integrated circuit elements are generally supplied in a state of being sealed with an epoxy-based insulating synthetic resin, ceramic, or the like, but they are also supplied in a bare chip state by adopting so-called bare chip mounting technology that meets the demand for miniaturization. It has come to be.

  A semiconductor integrated circuit element is used to measure whether or not it has predetermined electrical characteristics in a wafer state or a bare chip state by using various probe devices. Since the probe device is used to measure the electrical characteristics of a semiconductor integrated circuit element in which a large number of electrodes are formed at a small pitch, a large number of probes arranged at a small pitch corresponding to the electrode pitch are provided. Provided. The probe device includes a passive element component such as a chip capacitor, a chip coil, or a decoupling capacitor between a power source and the ground, for example, in order to measure the high-frequency electrical characteristics of the semiconductor integrated circuit element with high accuracy. And impedance matching. In the probe apparatus, for example, it is possible to cope with the impedance matching adjustment operation by adopting a structure in which passive component parts and signal lines can be exchanged or moved.

  As a probe device, for example, a coplanar type probe device having a coplanar structure which is a kind of high-frequency line, a membrane probe device or a coaxial cable provided with terminals for forming an electric circuit on a flexible insulating film such as polyimide and contacting the electrodes A coaxial probe device or the like is provided that extends the tip of the signal line as a probe. Patent Document 1 discloses a blade-type device in which a microstrip transmission structure is formed on a substrate such as a ceramic substrate and a short needle probe protrudes from a signal line. In Patent Document 2, there is a probe card in which a ground plate having a sawtooth ground probe formed on the lower surface of an insulating substrate is attached, and a high frequency probe and a bias probe are projected from an opening formed in the ground plate. It is disclosed.

  However, in the high-frequency probe device, signal loss increases as the frequency band becomes higher, so that improvement for high-accuracy measurement is required. That is, in the high-frequency probe device, how to reduce the signal loss, minimize the electrical and physical distance of the signal line, and shorten the return path is an important issue. Further, in the high-frequency probe device, it is a problem to configure the shortest return path and the shortest signal transmission path by holding the high-frequency signal in a state in which impedance matching is achieved.

  The above-described conventional probe device has a problem that the grounding area of the opening of the ground cannot be sufficiently taken, or a problem that the grounding with respect to the high-frequency signal line becomes long. Further, in the conventional probe device, there is a problem that the impedance fluctuates at the tip portion of the probe even though the matching is performed by, for example, 50Ω matching using the ceramic blade.

  The conventional blade-type probe apparatus 100 shown in FIGS. 8 to 10 includes a large number of high-frequency semiconductor integrated circuit elements (hereinafter abbreviated as high-frequency semiconductor elements) formed on the main surface of the wafer 101 as shown in FIG. .) With 102 as an object, predetermined electrical characteristics are directly measured for each. The probe device 100 includes an insulating substrate 103, a large number of blades 104, a ground metal foil 105, and a large number of contact probes 106. The probe device 100 forms a guide opening 107 having an opening size larger than the electrode formation surface 102a of the semiconductor path element 102 in the insulating substrate 103, and is routed around the first main surface 103a and the second main surface 103b. As a result, the ground pattern 108 is formed.

  In the probe apparatus 100, each blade 104 is opposed to a large number of input / output electrodes (pads) 109, which are not formed in detail, formed on the electrode formation surface 102 a of the high-frequency semiconductor element 102. Are arranged radially on the first main surface 103a of the insulating substrate 103. Each blade 104 includes a dielectric base portion 110 formed in a substantially thin plate shape by ceramic or the like, a signal line 111 provided in an inner layer of the dielectric base portion 110, and a ground conductor 112 provided on a side surface. . Each blade 104 constitutes a microstrip line with the signal line 111 facing a ground pattern 113 formed on the bottom surface of the dielectric base 110. Each blade 104 is connected to the ground pattern 108 by overlapping the ground conductor 112 on the first main surface 103 a of the insulating substrate 103.

  In the probe device 100, the ground metal foil 105 is formed in a horizontally long rectangle as shown in FIG. 10 using a metal foil such as a copper foil. The ground metal foil 105 has an outer shape that is larger than the electrode formation surface 102a of the high-frequency semiconductor element 102 and larger than the opening width of the guide opening 107 of the insulating substrate 103, and is located at the center portion to form the electrode formation surface 102a. A horizontally-long rectangular electrode opening 114 having an opening size sufficient to position the input / output electrode 109 formed inside is formed. The ground metal foil 105 constitutes ground connection portions 115 and 115 by bending both end portions in the length direction into a crank shape.

  The ground metal foil 105 is combined with the second main surface 103b of the insulating substrate 103 so as to straddle the guide opening 107 with a shape like a concave underbridge, and as shown in FIG. 115 are soldered to the ground pattern 108 routed around the second main surface 103b. Therefore, the ground conductor 112 of each blade 104 is commonly connected to the ground metal foil 105 via the ground pattern 108.

  In the probe apparatus 100, each blade 104 is formed by drawing the signal line 111 to the tip 110a of the dielectric base 110 facing the second main surface 103b side of the insulating substrate 103 to form the probe connecting part 111a. The contact probes 106 are respectively attached to the probe connection portions 111a. Each contact probe 106 is formed finely and precisely by a lithography technique or an electroforming technique using a conductive metal thin plate or a thin plate material. Each contact probe 106 is cantilevered by the blade 104 by connecting the base end portion 106 a to the probe connection portion 111 a, and an electrode opening in which a tip end portion 106 b bent at a substantially right angle is formed in the ground metal foil 105. It protrudes through the portion 114.

  The probe device 100 is combined with the high-frequency semiconductor element 102 so that the electrode formation surface 102a is positioned in the electrode opening 114 of the ground metal foil 105, and a predetermined electrical characteristic is measured with respect to the high-frequency semiconductor element 102. Do. In the probe device 100, the tip end portions 106 b of the contact probes 106 protruding from the electrode openings 114 are in pressure contact with the input / output electrodes 109 facing each other of the high-frequency semiconductor element 102. In the probe apparatus 100, a measurement signal is applied to the input / output electrode 109 via each contact probe 106, and the output is measured to determine whether or not each high-frequency semiconductor element 102 has a predetermined electrical characteristic. .

Japanese National Patent Publication No. 8-510553 Japanese Utility Model Publication No. 4-121740

  By the way, since the blade type probe card described in Patent Document 1 described above has a limit in the thickness of the insulating substrate that supports the probe, the blade-type probe card is a semiconductor integrated circuit element in which a large number of input / output electrodes are arranged at a minute pitch. Application of was difficult. The blade-type probe card makes it difficult to bring the probe into contact with each input / output electrode at the same time.For example, it is possible to perform measurement while moving the probe, but the measurement efficiency deteriorates and high accuracy measurement is possible. It can't be done.

  Since the conventional probe device 100 described above has a structure in which the contact probe 106 is attached to each blade 104 configured by providing the dielectric base 110 with the signal line 111 and the ground conductor 112, the high frequency of each contact probe 106. The improvement of the characteristic is aimed at. In the probe apparatus 100, the ground conductor is provided with the ground metal foil 105 having the electrode opening 114 to surround the electrode forming surface 102a of the high-frequency semiconductor element 102, thereby improving the ground area and simplifying the ground connection. Is planned.

  However, even in such a probe device 100, it is difficult to ensure a sufficient ground area for the electrode forming surface 102a of the high-frequency semiconductor element 102, and the return path increases as the frequency band increases. Further, since the probe device 100 connects the electrical ground by the ground pattern 108 formed by drawing the ground conductor 112 of each blade 104 and the ground metal foil 105 around the insulating substrate 103, it is difficult to shorten the return path. Met. Therefore, the probe apparatus 100 cannot be used for measurement of, for example, a high frequency IC (MMIC) that requires high-precision electrical characteristics due to a large signal loss in a high frequency band.

  Therefore, the present invention makes it possible to reduce the ground inductance and measure the high-frequency electrical characteristics with high accuracy and efficiency with the shortest return path for a semiconductor integrated circuit element in a wafer state or a bare chip state. An object is to provide a probe device.

  A probe apparatus according to the present invention that achieves the above-described object includes an insulating substrate, a large number of blades, a ground metal foil, and a large number of contact probes. Measure characteristics. In the probe device, a guide opening having an opening size larger than the electrode formation surface of the high-frequency semiconductor integrated circuit element is formed in an insulating substrate. The probe device is configured such that each blade is opposed to each input / output electrode formed on the electrode forming surface of the high-frequency semiconductor integrated circuit element, and has its respective tip protruded into the guide opening to face the second main surface. Are arranged radially on the first main surface of the insulating substrate, and a signal line and a ground conductor are provided on each of the dielectric base portions. In the probe device, the ground metal foil is fixed to the second main surface side of the insulating substrate so as to close the guide opening, and is connected to the ground conductor of each blade in the vicinity of the opening edge of the guide opening. A large number of electrode openings corresponding to the input / output electrodes of the semiconductor integrated circuit element and having an opening size sufficient to face each of the input / output electrodes are formed. In the probe device, each contact probe is connected to each signal line at the tip of each blade and is cantilevered, and the tip protrudes from the opposing electrode opening of the circuit board.

  In the probe device, by combining with the electrode forming surface of the high-frequency semiconductor integrated circuit element, the input / output electrodes facing each other are faced in the respective electrode openings of the ground metal foil, and the contact probes are in contact with the respective input / output electrodes. To do. In the probe apparatus, a high frequency signal is applied to each input / output electrode of the device via each contact probe, and the output is detected to measure the electrical characteristics of the high frequency semiconductor integrated circuit element.

  In the probe apparatus, by allowing the opposing input / output electrodes to face the respective electrode openings formed in the ground metal foil, a substantially maximum ground area can be provided with respect to the electrode formation surface of the high-frequency semiconductor integrated circuit element. To be secured. The probe device has a structure in which the ground metal foil and the ground conductor portion of each blade are directly connected without a routing pattern, thereby shortening the return path and reducing the ground inductance. In the probe device, the ground metal foil that positions the respective input / output electrodes in each electrode opening functions as a ground having a large area of a high-frequency signal input / output from each input / output electrode via the contact probe. Therefore, shorten the return path.

  According to the probe device of the present invention, the electrode of the high-frequency semiconductor integrated circuit element has a simple structure having a ground metal foil, and a plurality of electrode openings are formed on the ground metal foil so that each input / output electrode faces each other. In addition to securing a sufficient ground area on the formation surface, the ground metal foil and the ground conductor are directly connected to shorten the return path and reduce the ground inductance, thereby suppressing the level reduction of the high frequency signal and the semiconductor integrated circuit. It becomes possible to measure the electrical characteristics in the high frequency band of the element with high accuracy.

  Hereinafter, a probe device 1 shown in the drawings as an embodiment of the present invention will be described in detail. Similarly to the above-described conventional probe apparatus 100, the probe apparatus 1 is also a large number of so-called wafer states formed on the main surface of the wafer 101 supplied by an appropriate handling apparatus or the like, for example, while being installed in the measurement main body apparatus. The high-frequency semiconductor elements 102 are used as measurement objects, and their operation is confirmed one by one, and predetermined high-frequency electrical characteristics are measured and inspected. Needless to say, the probe device 1 can also be used for a high-frequency semiconductor element mounted on an appropriate holding member.

  The basic configuration of the probe apparatus 1 is the same as that of the probe apparatus 100. As shown in FIGS. 1 and 2, the insulating substrate 2, the multiple blades 3, the ground metal foil 4, and the multiple contacts. The probe 5 is provided. The probe device 1 includes a pedestal member 6 for attaching the ground metal foil 4 to the insulating substrate 2 as will be described in detail later. Although not shown, the probe device 1 is provided with an impedance matching circuit having passive element components such as a chip capacitor, a chip coil, or a decoupling capacitor between a power source and a ground on the main body side, and performs, for example, 50Ω matching matching. The high frequency electrical characteristics of the high frequency semiconductor element 102 are measured via the line.

  In the probe device 1, the insulating substrate 2 is formed of an appropriate insulating synthetic resin material, for example, CFR (Carbon Fiber Reinforced Plastics), etc., and each blade 3 and the ground metal foil 4 are attached and illustrated as described in detail later. It is attached to a device frame that does not constitute a support base. The insulating substrate 2 is formed with a circular guide opening 7 located at the center thereof and having an opening diameter larger than that of the electrode forming surface 102a of the semiconductor path element 102.

  In the probe apparatus 1, each blade 3 is provided with the same number as the number of input / output electrodes 109 that are omitted from the details formed on the electrode formation surface 102 a of the high-frequency semiconductor element 102. Each blade 3 includes a dielectric base portion 8 formed in a substantially thin plate shape using ceramic or the like as a material, a signal line 9 provided in an inner layer of the dielectric base portion 8, a ground conductor 10 provided on a side surface, and a signal line. 9 and a ground pattern 11 provided on the bottom surface facing the substrate 9. In each blade 3, each dielectric base 8 is bent at a substantially right angle with the tip 8 a toward the insulating substrate 2, and the tip 8 a extends along the opening edge of the guide opening 7. Projecting toward the surface 2b side, the first main surface 2a, in other words, as shown in FIG.

  In each blade 3, the signal line 9 is formed over the entire length in the longitudinal direction by forming a copper foil layer on the dielectric base portion 8, for example, and subjecting this copper foil layer to photolithography. As shown in FIG. 1, each signal line 9 is formed so as to be routed to the end face of the tip 8a of the dielectric base 8 protruding into the guide opening 6 of the insulating substrate 2, and this route is a contact probe described later. The probe attachment part 9a which attaches 5 is comprised. Each signal line 9 is connected to a high-frequency signal input / output unit (not shown) via a high-frequency dedicated connector on the base end side of the dielectric base 8. Each signal line 9 constitutes a microstrip line that efficiently transmits a high-frequency signal by being opposed to the ground pattern 11 via the dielectric base portion 8.

  The ground conductor 10 is formed by a copper foil layer having a large area along the side surface of the dielectric base portion 8 as shown in FIG. The ground conductor 10 is formed so as to extend to the tip 8a of the dielectric base 8 facing the guide opening 7 of the insulating substrate 2, and this extended portion is electrically connected to the ground metal foil 4 described later. The ground connection portion 10a is configured. Needless to say, the ground conductor 10 is formed on the dielectric base 8 while being insulated from the signal line 9.

  In the probe device 1, the ground metal foil 4 is formed in a disc shape as shown in FIG. 4 using a metal foil such as a copper foil. The ground metal foil 4 has an inner diameter that is larger than the electrode forming surface 102 a of the high-frequency semiconductor element 102 and larger than the opening diameter of the guide opening 7 of the insulating substrate 2. The ground metal foil 4 is formed with a large number of electrode openings 12 penetrating in the thickness direction and arranged in the same number as the input / output electrodes 109 formed on the high-frequency semiconductor element 102 so as to face each other. .

  Each electrode opening 12 is formed to have an opening size slightly larger than the outer size of the input / output electrode 109, and one input / output electrode 109 is provided at the time of measurement as shown in FIGS. Make them face each other in a corresponding position. Each electrode opening 12 is precisely formed as a minute opening that is respectively opposed to the minute input / output electrode 109 by performing, for example, photolithography processing on the copper foil disk. Of course, each electrode opening 12 may be formed in the copper foil disk by other appropriate fine processing techniques.

  As will be described later, the ground metal foil 4 is positioned and fixed so as to close the guide opening 7 with respect to the insulating substrate 2 via the base member 6. In the ground metal foil 4, at least a first mounting hole 13 </ b> A and a second mounting hole 13 </ b> B are formed symmetrically in the vicinity of the outer peripheral portion. Although details are omitted, for example, the first metal mounting hole 13A is formed as a long hole in the circumferential direction and the second metal mounting hole 13B is formed as a long hole in the diameter direction. The position is adjusted and attached to the insulating substrate 2 in the circumferential direction and the diameter direction with respect to the length of the hole.

  A ground conductor 10 of each blade 3 is connected to the ground metal foil 4 through a ground lead 14 described later in a state of being attached to the insulating substrate 2. As shown in FIG. 4, the ground metal foil 4 is connected so that each ground lead 14 is soldered and connected to each other at a connection portion 15 located inside the mounting hole 13 and close to each electrode opening 12. To do. Therefore, the ground metal foil 4 forms a sufficiently large ground surface by allowing only the input / output electrodes 109 to face the respective electrode openings 12 on the electrode forming surface 102 a of the high-frequency semiconductor element 102. In addition, the ground metal foil 4 commonly connects the ground conductors 10 of the blades 3 with the shortest length via the ground leads 14 at positions close to the electrode openings 12.

  In the probe apparatus 1, as described above, each blade 3 causes the tip 8 a of the dielectric base 8 to protrude into the guide opening 6 of the insulating substrate 2, and the probe 3 1 is routed to form the probe attachment 9 a. is doing. As shown in FIG. 1, the probe device 1 is attached to each blade 3 in a cantilever state by soldering the proximal end portion 5a to the probe attachment portion 9a with respect to each blade 3. Each contact probe 5 is formed finely and precisely by a lithography technique or an electroforming technique using a metal thin plate or a thin plate material having conductivity. As shown in FIG. 2, each contact probe 5 is penetrated with a protruding amount of about 200 microns from the opposed electrode opening 12 formed on the ground metal foil 4 at the tip bent at a substantially right angle. A scrubbing portion 5 b is formed in pressure contact with the input / output electrode 109 of the high-frequency semiconductor element 102.

  Each contact probe 5 can be elastically deformed to some extent in the thickness direction and the height direction, and the scrubbing portion 5b is formed in a sharp shape. As will be described later, in each contact probe 5, a scrubbing portion 5 b protruding from each electrode opening 12 is pressed against an input / output electrode 109 of the high-frequency semiconductor element 102 facing the electrode opening 12 during a measurement operation. As a result, each contact probe 5 accumulates an elastic force, and the scrubbing portion 5 b is kept in contact with the input / output electrode 109. Each contact probe 5 measures the electrical characteristics of the high-frequency semiconductor element 102 when the probe device 1 is in a wafer state, but the scrubbing portion 5b peels off a thin oxide film layer formed on the surface of the input / output electrode 109 to electrically Ensure that the connection is made.

  In the probe device 1, a pair of pedestal members 6 </ b> A and 6 </ b> B are positioned and fixed to the second main surface of the insulating substrate 2 with the guide opening 7 interposed therebetween. Each pedestal member 6 is provided with a positioning pin 16 corresponding to each mounting hole 13 of the ground metal foil 4 described above, and the mounting metal 13 is fitted to each positioning pin 16 so that the ground metal foil 4 is formed. The outer periphery is fixed. Each pedestal member 6 holds the ground metal foil 4 and the contact probe 5 at a predetermined interval so that the ground metal foil 4 has a simple disk shape without a bent portion. Each pedestal member 6 enables the ground metal foil 4 to be positioned and attached by fitting a positioning pin 16 to each attachment hole 13 formed in a long hole.

  As described above, in the probe device 1, each blade 3 causes the tip 8a of the dielectric base 8 to protrude into the guide opening 6 of the insulating substrate 2 and extends the ground conductor 10 to the tip 8a to connect the ground connection 10a. Is forming. In the probe device 1, the other end of the ground lead 14 soldered at one end to the ground connection portion 10 a is soldered to the connection portion 15 of the ground metal foil 4, as shown in FIG. 2.

  In the probe device 1, the ground conductor 10 of each blade 3 is connected in common to the ground metal foil 4 that forms the maximum grounding area on the electrode forming surface 102 a of the high-frequency semiconductor element 102 by the above-described structure. This simplifies the wiring structure. In the probe apparatus 1, the line length is shortened by the shortest structure in which the ground conductor 10 of each blade 3 is connected to the ground metal foil 4 in the vicinity of the contact probe 5 and the input / output electrode 109 of the high-frequency semiconductor element 102. Is achieved.

  In the probe apparatus 1 configured as described above, the high-frequency semiconductor element 102 in the wafer state is arranged such that the opposing input / output electrodes 109 formed on the electrode formation surface 102a face the electrode openings 12 of the ground metal foil 4 respectively. Then, a predetermined electrical characteristic is measured for the high-frequency semiconductor element 102. In the probe apparatus 1, the scrub parts 5 b of the contact probes 5 protruding from the electrode openings 12 are pressed against the input / output electrodes 109 of the high-frequency semiconductor element 102, respectively. In the probe apparatus 1, the high frequency signal is applied to the input / output electrode 109 via each contact probe 5, and the output is measured to measure the electrical characteristics of each high frequency semiconductor element 102.

  FIG. 5 is a frequency characteristic diagram of the pass characteristic S21 showing the result of measuring the attenuation amount of the high frequency signal of 0 GHz to 6 GHz passing through the probe device 1 with the horizontal axis as the frequency band and the vertical axis as the attenuation amount. The probe device 1 obtained a measurement result in which the frequency characteristic of the pass characteristic S21 of 0 GHz to 6 GHz has a gain at 6 GHz of about −1.5 dB and the signal loss is extremely small as shown by a line a in FIG. Since the probe device 1 has a structure in which a large ground area is secured and the return path is minimized as described above, signal loss can be reduced, and signal level attenuation can be achieved even in a high frequency band. It is possible to carry out highly accurate measurement by reducing.

  On the other hand, in the conventional probe device 100 described above, the signal loss increases as the frequency characteristic of the pass characteristic S21 from 0 GHz to 6 GHz becomes a high frequency region as shown by the d line in FIG. In the probe apparatus 100, the gain at 6 GHz is −4.5 dB or more.

  The probe device 1 includes a ground metal foil 4 having a large number of electrode openings 12 corresponding to each input / output electrode 109 of the high-frequency semiconductor element 102 and facing each one of them. It is not limited to the foil 4. For example, the probe device 1 may include the ground metal foil 20 shown in FIG. 6 as the second embodiment. The ground metal foil 20 has an opening 21 having an opening dimension that is slightly larger than the outer dimension of the electrode forming surface 102 a of the high-frequency semiconductor element 102. In the ground metal foil 20, a plurality of bridge pieces 22 are left uncut so as to extend vertically and horizontally inside the opening 21, and the bridge pieces 22 are divided into a plurality of regions. The ground metal foil 20 is configured as an electrode opening 23 in which each divided region faces each input / output electrode 109 of the high-frequency semiconductor element 102 one by one.

  In the ground metal foil 20, each bridge piece 22 constitutes each electrode opening 23 by a relatively easy processing method by a method such as using a half edge technique adopted in a semiconductor chip assembly process or a copper foil tape. It is possible. The ground metal foil 20 has a simplified process for forming the electrode openings 23 and changes the number and position of the bridge pieces 22 compared to the ground metal foil 4 that forms the individual electrode openings 12 described above. Therefore, it is easy to cope with the high-frequency semiconductor element 102 in which the arrangement pattern of the input / output electrodes 109 is different. Further, the ground metal foil 20 is formed with the bridge piece 22 having an appropriate width, whereby the opening size of each electrode opening 23 is adjusted, and the positioning of the corresponding input / output electrodes 109 can be easily performed.

  As described above, the ground metal foil 20 forms the opening 21 having an opening size substantially equal to that of the electrode forming surface 102a and divides the inside by a plurality of bridge pieces 22 to form each electrode opening 23. In comparison with the ground metal foil 4 described above, the ground area on the electrode formation surface 102a of the high-frequency semiconductor element 102 is slightly reduced, and the return path is also somewhat longer. Also in the probe apparatus 1 including the ground metal foil 20, the frequency characteristic of the transmission characteristic S21 of 0 GHz to 6 GHz is slightly higher than that using the ground metal foil 4 as shown by the b line in FIG. However, the gain at 6 GHz is about -2.5 dB and the signal loss is small. Therefore, the signal loss of the probe device 1 including the ground metal foil 20 is greatly reduced as compared with the conventional probe device 100.

  For example, the probe device 1 may include the ground metal foil 25 shown in FIG. 7 as the third embodiment. The ground metal foil 25 also has an opening 26 whose opening dimension is slightly larger than the outer dimension of the electrode forming surface 102 a of the high-frequency semiconductor element 102. A plurality of jumper wires 27 are laid across the ground metal foil 25 so as to straddle the inside of the opening 26 in the vertical and horizontal directions (only in the horizontal direction in the figure), and these jumper wires 27 divide into a plurality of regions. Is done. The ground metal foil 25 is configured as an electrode opening 28 in which each divided region faces each input / output electrode 109 of the high-frequency semiconductor element 102 one by one.

  The ground metal foil 25 is fixed by soldering each jumper wire 27 to the opening edge of the opening 26 at a position where each jumper wire 27 does not face each input / output electrode 109 of the high-frequency semiconductor element 102. The ground metal foil 25 can form each electrode opening 28 by forming a simple-shaped opening 26 and soldering each jumper wire 27. The ground metal foil 25 is formed of the electrode opening 28 compared to the ground metal foil 4 forming the individual electrode openings 12 and the ground metal foil 20 forming the electrode openings 23 by cutting away the bridge pieces 22. The formation process is greatly simplified, and it is further easy to cope with the high-frequency semiconductor element 102 in which the arrangement pattern of the input / output electrodes 109 is changed by changing the number of the jumper wires 27 and the fixed position. . Each jumper wire 27 can be connected to the ground metal foil 25 by, for example, a wire bonding method or a spot welding method.

  As described above, the ground metal foil 25 forms the opening 21 having an opening size substantially equal to that of the electrode forming surface 102a and divides the inside by a plurality of jumper wires 27 to form each electrode opening 28. In comparison with the ground metal foil 4 and the ground metal foil 20 described above, the ground area on the electrode forming surface 102a of the high-frequency semiconductor element 102 is reduced, and the return path is also somewhat longer.

  Also in the probe device 1 including the ground metal foil 25, the frequency characteristic of the transmission characteristic S21 of 0 GHz to 6 GHz is compared with that using the ground metal foil 4 and the ground metal foil 20 as shown by the c line in FIG. As a result, although the pass characteristic is degraded, a measurement result is obtained in which the gain at 6 GHz is about −3.0 dB and the signal loss is small. Therefore, even in the probe device 1 including the ground metal foil 25, signal loss is reduced as compared with the conventional probe device 100. Although the ground metal foil 25 is formed in a horizontally long rectangular shape, the entire circular guide opening 7 of the insulating substrate 2 is closed in the same manner as the ground metal foil 4 and the ground metal foil 20 described above. Of course, it may be formed in the shape of a disk having an outer diameter dimension sufficient for.

It is principal part sectional drawing of the probe apparatus shown as embodiment. It is principal part sectional drawing which shows the connection site | part of the ground conductor part of the probe apparatus. It is a principal part top view which shows the arrangement | positioning state of a ground metal foil and a braid | blade. It is a perspective view of a ground metal foil. It is a frequency characteristic figure of 0 GHz-6 GHz passage characteristic S21 of each probe apparatus. It is a top view of the ground metal foil shown as 2nd Embodiment. It is a top view of the ground metal foil shown as 3rd Embodiment. It is principal part sectional drawing of the conventional probe apparatus. It is principal part sectional drawing which shows the connection site | part of the ground conductor part of the probe apparatus. It is a top view of the ground metal foil with which the probe apparatus is equipped. It is a perspective view of the wafer in which the high frequency semiconductor element was formed.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe apparatus, 2 Insulating board, 3 Blade, 4 Ground metal foil, 5 Contact probe, 6 Base member, 7 Guide opening, 8 Dielectric base | substrate part, 9 Signal line, 10 Ground conductor, 11 Ground pattern, 12 Electrode opening , 13 Mounting hole, 14 Ground lead, 15 Connection part, 16 Positioning pin, 20 Ground metal foil, 21 Opening part, 22 Bridge piece, 23 Electrode opening part, 25 Ground metal foil, 26 Opening part, 27 Jumper wire, 28 Electrode Opening, 102 High-frequency semiconductor element, 102a Electrode forming surface, 109 Input / output electrode

Claims (7)

In a probe device for measuring electrical characteristics of a high-frequency semiconductor integrated circuit element as an object,
An insulating substrate in which a guide opening having an opening size larger than an electrode formation surface of the high-frequency semiconductor integrated circuit element is formed;
The insulating substrate is opposed to each input / output electrode formed on the electrode forming surface of the high-frequency semiconductor integrated circuit element and protrudes from the leading end portion into the guide opening so as to face the second main surface. A plurality of blades, each of which is radially arranged on the first main surface of the substrate, each including a dielectric base portion, and a signal line and a ground conductor provided on the dielectric base portion;
The high frequency semiconductor integrated circuit is fixed to the second main surface side of the insulating substrate so as to close the guide opening and is connected to the ground conductor of each blade in the vicinity of the opening edge of the guide opening. A ground metal foil formed with a plurality of electrode openings corresponding to the input / output electrodes of the element and having an opening size sufficient to position each of the electrodes inside;
A plurality of contact probes that are connected to the respective signal lines at the tip of each blade and are cantilevered and the tip protrudes from the electrode openings facing the circuit board;
In combination with the electrode forming surface of the high-frequency semiconductor integrated circuit element, the ground metal foil faces the input / output electrodes facing each other in the electrode openings, and the contact probes are connected to the electrodes. A probe device that contacts. Each of the blades leads the signal line to the tip of the insulating base portion extending from the opening edge of the guide opening of the insulating substrate to the second main surface side of the insulating substrate to connect the probe connection portion. And forming a ground connection part integral with the ground conductor,
2. The probe device according to claim 1, wherein a base end portion of each of the contact probes is fixed to the probe connection portion, and the ground metal foil is connected at the ground connection portion. A pedestal member is provided on the second main surface side of the insulating substrate at the outer peripheral portion of the guide opening, and a mounting portion extended corresponding to the pedestal member is integrally formed on the outer peripheral portion of the ground metal foil. Forming,
The probe apparatus according to claim 2, wherein the ground metal foil fixes the attachment portion to the base member at an outer peripheral position of a connection portion with the ground connection portion with respect to the insulating substrate.   4. The probe apparatus according to claim 3, wherein the ground metal foil is positioned with respect to the circuit board by positioning means formed on the mounting portion and the pedestal member so as to be relatively fitted.   Each of the electrode openings is constituted by a large number of openings formed in the ground metal foil corresponding to each of the input / output electrodes formed on the electrode formation surface of the high-frequency semiconductor integrated circuit element. The probe apparatus according to claim 1.   Each electrode opening corresponds to each input / output electrode by a plurality of bridge pieces provided in the opening having substantially the same opening size as the electrode forming surface of the high-frequency semiconductor integrated circuit element in the ground metal foil. The probe apparatus according to claim 1, wherein the probe apparatus includes a plurality of divided space areas. Each of the input / output electrodes is formed by a plurality of metal wires spanning an opening having an opening size substantially equal to the electrode forming surface of the high-frequency semiconductor integrated circuit element formed on the ground metal foil. The probe apparatus according to claim 1, wherein the probe apparatus is configured by a plurality of spatial regions divided in accordance with

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