JP2010034429A5 - - Google Patents

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Publication number
JP2010034429A5
JP2010034429A5 JP2008197159A JP2008197159A JP2010034429A5 JP 2010034429 A5 JP2010034429 A5 JP 2010034429A5 JP 2008197159 A JP2008197159 A JP 2008197159A JP 2008197159 A JP2008197159 A JP 2008197159A JP 2010034429 A5 JP2010034429 A5 JP 2010034429A5
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Japan
Prior art keywords
polishing
roller
wafer
peripheral portion
rotating
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JP2008197159A
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Japanese (ja)
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JP5386874B2 (en
JP2010034429A (en
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Priority to JP2008197159A priority Critical patent/JP5386874B2/en
Priority claimed from JP2008197159A external-priority patent/JP5386874B2/en
Publication of JP2010034429A publication Critical patent/JP2010034429A/en
Publication of JP2010034429A5 publication Critical patent/JP2010034429A5/ja
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Claims (10)

研磨スラリーが貯留されて上方が開放したタンクと、A tank in which the polishing slurry is stored and the upper part is opened;
ローラの一部が前記スラリーの液面より上部に存在して、かつ水平に前記タンクに設けられた研磨ローラと、  A part of the roller exists above the liquid level of the slurry, and a polishing roller provided horizontally in the tank;
前記研磨ローラと平行に設けられウェーハ周辺部形状に相応した形状の複数の周溝が所定の間隔をあけて形成され前記周溝にウェーハ周辺部を収容することにより前記研磨ローラとともに複数の半導体ウェーハを鉛直状態に保持する複数の回転ローラと、  A plurality of circumferential grooves provided in parallel with the polishing roller and having a shape corresponding to the shape of the peripheral portion of the wafer are formed at predetermined intervals, and a plurality of semiconductor wafers are formed together with the polishing roller by accommodating the peripheral portion of the wafer in the circumferential groove. A plurality of rotating rollers that hold the device in a vertical state;
前記研磨ローラを回転駆動する第１ローラ回転手段と、  First roller rotating means for rotating the polishing roller;
前記複数の回転ローラを回転駆動する第２ローラ回転手段と  Second roller rotating means for rotating the plurality of rotating rollers;
を備え、  With
前記第１及び第２ローラ回転手段により前記研磨ローラ及び前記複数の回転ローラを回転駆動して前記ウェーハを円周方向に回転させることにより前記研磨ローラに保持された研磨スラリーで前記ウェーハの周辺部を研磨する  The polishing roller and the plurality of rotating rollers are rotationally driven by the first and second roller rotating means to rotate the wafer in the circumferential direction, thereby polishing the peripheral portion of the wafer with the polishing slurry held on the polishing roller. To polish
ことを特徴とする半導体ウェーハ周辺部の研磨装置。  An apparatus for polishing a peripheral portion of a semiconductor wafer. 研磨ローラに接触回転した直後の半導体ウェーハの周辺部に超純水を噴射するためのシャワーノズルを更に備えたことを特徴とする請求項１記載の半導体ウェーハ周辺部の研磨装置。2. The polishing apparatus for a peripheral portion of a semiconductor wafer according to claim 1, further comprising a shower nozzle for jetting ultrapure water to the peripheral portion of the semiconductor wafer immediately after rotating in contact with the polishing roller. 研磨ローラに接触回転して研磨される半導体ウェーハの数と少なくとも同数の周溝が前記研磨ローラに形成され、前記周溝の内面形状が前記ウェーハの所望の面取り形状に相応することを特徴とする請求項１又は２記載の半導体ウェーハ周辺部の研磨装置。At least the same number of circumferential grooves as the number of semiconductor wafers to be polished by rotating in contact with the polishing roller are formed on the polishing roller, and the inner surface shape of the circumferential grooves corresponds to a desired chamfered shape of the wafer. 3. A polishing apparatus for a peripheral portion of a semiconductor wafer according to claim 1 or 2. 研磨ローラが高硬度材料からなる軸芯とこの軸芯の周囲に設けられたエンジニアリングプラスチックと前記エンジニアリングプラスチックの周囲に設けられた研磨クロスとにより構成されたことを特徴とする請求項１ないし３いずれか１項に記載の半導体ウェーハ周辺部の研磨装置。4. The polishing roller according to claim 1, wherein the polishing roller comprises an axial core made of a high-hardness material, an engineering plastic provided around the axial core, and an abrasive cloth provided around the engineering plastic. 2. A polishing apparatus for peripheral portions of a semiconductor wafer according to claim 1. ウェーハ表裏面をフリーな状態にして所定の間隔をあけて鉛直方向に保持された複数の半導体ウェーハを、研磨スラリーを保持して回転する研磨ローラに接触回転させて前記ウェーハの周辺部を研磨することを特徴とする半導体ウェーハ周辺部の研磨方法。   A plurality of semiconductor wafers held in a vertical direction at predetermined intervals with the front and back surfaces of the wafer being in a free state are contacted and rotated by a rotating polishing roller that holds polishing slurry and polishes the peripheral portion of the wafer. A method for polishing a peripheral portion of a semiconductor wafer. 研磨ローラに接触回転した直後の半導体ウェーハの周辺部に超純水を噴射して前記ウェーハに付着した研磨スラリーを除去することを特徴とする請求項５記載の半導体ウェーハ周辺部の研磨方法。 6. The method for polishing a peripheral portion of a semiconductor wafer according to claim 5, wherein ultrapure water is sprayed on the peripheral portion of the semiconductor wafer immediately after rotating in contact with the polishing roller to remove the polishing slurry adhering to the wafer. 研磨ローラに接触回転して研磨される半導体ウェーハの数と少なくとも同数の周溝が前記研磨ローラに形成され、前記周溝の内面形状が前記ウェーハの所望の面取り形状に相応する請求項５又は６記載の半導体ウェーハ周辺部の研磨方法。 The number and at least as many peripheral groove of the semiconductor wafer to be polished in contact rotates the polishing roller is formed in the polishing roller, according to claim 5 or 6 inner face of the circumferential grooves corresponding to the desired chamfer shape of the wafer A method for polishing a peripheral portion of the semiconductor wafer as described. 研磨ローラの周囲を研削した後、前記研磨ローラに接触回転して研磨される半導体ウェーハの数と少なくとも同数の周溝を前記研磨ローラに形成することを特徴とする請求項７記載の半導体ウェーハ周辺部の研磨方法。 8. The periphery of a semiconductor wafer according to claim 7 , wherein after the periphery of the polishing roller is ground, at least as many peripheral grooves as the number of semiconductor wafers to be polished by rotating in contact with the polishing roller are formed in the polishing roller. Part polishing method. 複数の半導体ウェーハをウェーハキャリアに収容した状態で研磨ローラに接触回転させることを特徴とする請求項５又は６記載の半導体ウェーハ周辺部の研磨方法。 The method for polishing a peripheral portion of a semiconductor wafer according to claim 5 or 6 , wherein a plurality of semiconductor wafers are rotated in contact with a polishing roller while being accommodated in a wafer carrier. ウェーハキャリアに収容していた複数の半導体ウェーハを前記キャリアから取り出した状態で研磨ローラに接触回転させることを特徴とする請求項５又は６記載の半導体ウェーハ周辺部の研磨方法。 Method of polishing a semiconductor wafer periphery according to claim 5 or 6, wherein the contacting rotating the polishing rollers a plurality of semiconductor wafers are accommodated in a wafer carrier in a state taken out from the carrier.
JP2008197159A 2008-07-31 2008-07-31 Semiconductor wafer peripheral polishing apparatus and method Active JP5386874B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008197159A JP5386874B2 (en) 2008-07-31 2008-07-31 Semiconductor wafer peripheral polishing apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008197159A JP5386874B2 (en) 2008-07-31 2008-07-31 Semiconductor wafer peripheral polishing apparatus and method

Publications (3)

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JP2010034429A JP2010034429A (en) 2010-02-12
JP2010034429A5 true JP2010034429A5 (en) 2011-09-15
JP5386874B2 JP5386874B2 (en) 2014-01-15

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110099108A (en) * 2008-11-19 2011-09-06 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Method and system for stripping the edge of a semiconductor wafer
KR101089480B1 (en) * 2010-06-01 2011-12-07 주식회사 엘지실트론 Wafer polishing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04129656A (en) * 1990-09-19 1992-04-30 Kawasaki Steel Corp Beveling device for semiconductor wafer
JP3256808B2 (en) * 1991-04-30 2002-02-18 東芝セラミックス株式会社 Peripheral polishing equipment for semiconductor wafers
JP2542445Y2 (en) * 1992-07-14 1997-07-30 信越半導体株式会社 Buff groove processing equipment
JPH11297665A (en) * 1998-04-06 1999-10-29 Takahiro Oishi Wafer end face processing apparatus
JPH11300587A (en) * 1998-04-15 1999-11-02 Mitsubishi Materials Corp Semi-conductor wafer grinding device
JP4743951B2 (en) * 2000-11-13 2011-08-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Polishing apparatus and polishing method for notch portion of semiconductor wafer
JP2007248812A (en) * 2006-03-16 2007-09-27 Bridgestone Corp Conductive roller
JP2008023603A (en) * 2006-07-18 2008-02-07 Nippon Seimitsu Denshi Co Ltd Retainer ring of two-layer structure

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