JP2010028087A5 - - Google Patents
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- JP2010028087A5 JP2010028087A5 JP2009068086A JP2009068086A JP2010028087A5 JP 2010028087 A5 JP2010028087 A5 JP 2010028087A5 JP 2009068086 A JP2009068086 A JP 2009068086A JP 2009068086 A JP2009068086 A JP 2009068086A JP 2010028087 A5 JP2010028087 A5 JP 2010028087A5
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- Prior art keywords
- adhesive film
- semiconductor chip
- weight
- temperature range
- dicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (9)
エポキシ樹脂１００重量部と、硬化剤２０〜７０重量部と、ヒュームドシリカ粒子５〜３０重量部とを含み、
７０〜１２０℃の温度範囲内における最低溶融粘度が、２５００〜１００００Ｐａ・ｓの範囲内にある、接着フィルム。 An adhesive film used for bonding a semiconductor chip having a thickness of 50 μm or less and a flat area of 50 mm 2 or more on an electronic component,
Including 100 parts by weight of epoxy resin, 20 to 70 parts by weight of curing agent, and 5 to 30 parts by weight of fumed silica particles,
The adhesive film whose minimum melt viscosity in the temperature range of 70-120 degreeC exists in the range of 2500-10000 Pa.s.
得られた前記半導体チップ積層体を７０〜１２０℃の温度範囲内で加熱して、前記接着フィルムを硬化させることにより、半導体装置を得る工程とを備える、半導体装置の製造方法。 A semiconductor chip having a thickness of 50 μm or less and a flat area of 50 mm 2 or more is laminated on an electronic component through an adhesive film having a minimum melt viscosity of 2500 to 10,000 Pa · s within a temperature range of 70 to 120 ° C. And, by crimping, obtaining a semiconductor chip laminate,
A method of manufacturing a semiconductor device, comprising: heating the obtained semiconductor chip laminate in a temperature range of 70 to 120 ° C. to cure the adhesive film to obtain a semiconductor device.
前記接着フィルムに貼り付けられた半導体ウェーハを前記接着フィルムごとダイシングし、厚みが５０μｍ以下かつ平面積が５０ｍｍ２以上である個々の半導体チップに前記半導体ウェーハを分割する工程と、
ダイシング後に、前記接着フィルム付き前記半導体チップを取り出す工程とをさらに備え、
前記半導体チップ積層体を得る工程において、得られた前記接着フィルム付き前記半導体チップを電子部品上に積層し、圧着する、請求項６又は７に記載の半導体装置の製造方法。 A dicing die comprising an adhesive film having a minimum melt viscosity in the range of 2500 to 10000 Pa · s within a temperature range of 70 to 120 ° C., and a dicing film laminated directly or indirectly on one surface of the adhesive film. A step of attaching a semiconductor wafer to the adhesive film of the bonding tape;
Dicing the semiconductor wafer attached to the adhesive film together with the adhesive film, dividing the semiconductor wafer into individual semiconductor chips having a thickness of 50 μm or less and a flat area of 50 mm 2 or more;
A step of taking out the semiconductor chip with the adhesive film after dicing,
The method of manufacturing a semiconductor device according to claim 6 or 7, wherein, in the step of obtaining the semiconductor chip laminate, the obtained semiconductor chip with the adhesive film is laminated on an electronic component and pressure-bonded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009068086A JP5303326B2 (en) | 2008-06-18 | 2009-03-19 | Adhesive film, dicing die-bonding tape, and semiconductor device manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008158971 | 2008-06-18 | ||
| JP2008158971 | 2008-06-18 | ||
| JP2009068086A JP5303326B2 (en) | 2008-06-18 | 2009-03-19 | Adhesive film, dicing die-bonding tape, and semiconductor device manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010028087A JP2010028087A (en) | 2010-02-04 |
| JP2010028087A5 true JP2010028087A5 (en) | 2012-03-01 |
| JP5303326B2 JP5303326B2 (en) | 2013-10-02 |
Family
ID=41733586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009068086A Active JP5303326B2 (en) | 2008-06-18 | 2009-03-19 | Adhesive film, dicing die-bonding tape, and semiconductor device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5303326B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6013709B2 (en) * | 2010-06-08 | 2016-10-25 | 日東電工株式会社 | Thermosetting die bond film, dicing die bond film, and semiconductor device manufacturing method |
| JP5792592B2 (en) * | 2011-11-02 | 2015-10-14 | 積水化学工業株式会社 | Manufacturing method of semiconductor device, semiconductor device, adhesive film, and bonding method of adhesive film |
| SG11201700740QA (en) | 2014-08-29 | 2017-02-27 | Furukawa Electric Co Ltd | Adhesive film |
| WO2016031553A1 (en) | 2014-08-29 | 2016-03-03 | 古河電気工業株式会社 | Adhesive film and semiconductor package using adhesive film |
| JP5901715B1 (en) | 2014-09-05 | 2016-04-13 | 古河電気工業株式会社 | Film adhesive, semiconductor package using film adhesive, and manufacturing method thereof |
| JP2019178304A (en) * | 2018-03-30 | 2019-10-17 | 太陽インキ製造株式会社 | Curable resin composition, dry film, cured product and printed wiring board |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4309710B2 (en) * | 2003-07-11 | 2009-08-05 | 住友ベークライト株式会社 | Adhesive film for semiconductor, dicing film and semiconductor device |
| JP4625342B2 (en) * | 2005-02-03 | 2011-02-02 | 積水化学工業株式会社 | Electronic component device and method of manufacturing electronic component device |
| JP4691401B2 (en) * | 2005-06-22 | 2011-06-01 | 株式会社巴川製紙所 | Adhesive composition for semiconductor device and adhesive sheet for semiconductor device |
| JP5046366B2 (en) * | 2005-10-20 | 2012-10-10 | 信越化学工業株式会社 | Adhesive composition and sheet provided with an adhesive layer comprising the adhesive |
| JP2007270125A (en) * | 2006-03-08 | 2007-10-18 | Hitachi Chem Co Ltd | Adhesive sheet, integrated sheet, semiconductor device, and method for producing the semiconductor device |
-
2009
- 2009-03-19 JP JP2009068086A patent/JP5303326B2/en active Active
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