JP2020181894A - Manufacturing method of semiconductor device having dolmen structure - Google Patents

Abstract

To provide a manufacturing method of a semiconductor device which can simplify a process of manufacturing a support piece for a dolmen structure and efficiently arrange the support piece on a substrate.SOLUTION: A manufacturing method of a semiconductor device having a dolmen structure includes a step (A) of preparing a laminated film including an adhesive layer and a support piece forming film made of a predetermined material, a step (B) of individualizing the support piece forming film to obtain a support piece, a step (C) of picking up the support piece from the adhesive layer with a first suction collet, a step (D) of transporting the support piece to an intermediate stage with the first suction collet, a step (E) of picking up the support piece on the intermediate stage with a second suction collet, and a step (F) of crimping the support piece transported by the second suction collet around the first chip on the substrate, and a plurality of support pieces are arranged around the first chip by performing the series of steps (C) to (F) a plurality of times.SELECTED DRAWING: Figure 6

Description

The present disclosure is supported and first by a substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and a plurality of support pieces. The present invention relates to a method for manufacturing a semiconductor device having a dolmen structure including a second chip arranged so as to cover the chip. A dolmen (dolmen) is a kind of stone tomb, and has a plurality of pillar stones and a plate-shaped rock placed on the pillar stone. In a semiconductor device having a dolmen structure, a support piece corresponds to a "dolmen" and a second chip corresponds to a "plate-shaped rock".

In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed have been required. As one aspect of a semiconductor device, a structure in which a semiconductor chip is laminated on a controller chip arranged on a substrate is attracting attention. For example, Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported by a support member on the controller die. It can be said that the semiconductor assembly 100 illustrated in FIG. 1A of Patent Document 1 has a dolmen structure. That is, the semiconductor assembly 100 includes the package substrate 102, the controller dies 103 arranged on the surface of the package substrate 102, the memory dies 106a and 106b arranged above the controller dies 103, and the support members 130a and 130b for supporting the memory dies 106a. To be equipped.

Special Table 2017-515306

Patent Document 1 discloses that a semiconductor material such as silicon can be used as a support member (support piece), and more specifically, a fragment of the semiconductor material obtained by dicing a semiconductor wafer can be used (Patent Document 1). 1 [0012], [0014] and FIG. 2). In order to manufacture a support piece for a dolmen structure using a semiconductor wafer, for example, the following steps are required as in the case of manufacturing a normal semiconductor chip.
(1) Step of attaching back grind tape to semiconductor wafer (2) Step of back grinding semiconductor wafer (3) Adhesive layer and adhesive layer for dicing ring and semiconductor wafer after back grind placed in it Step of pasting a film (dicing / die bonding integrated film) with and (4) Step of peeling back grind tape from semiconductor wafer (5) Step of individualizing semiconductor wafer (6) Semiconductor chip and adhesive piece A process of picking up a support piece made of a laminated body from an adhesive layer

The present disclosure provides a method for manufacturing a semiconductor device, which can simplify the process of manufacturing a support piece used for manufacturing a semiconductor device having a dolmen structure and can efficiently arrange the support piece on a substrate.

One aspect of the present disclosure relates to a method for manufacturing a semiconductor device having a dolmen structure. This manufacturing method includes the following steps.
(A) Step of preparing a laminated film including a base film, an adhesive layer, and a support piece forming film in this order (B) By separating the support piece forming film onto the surface of the adhesive layer Step of forming a plurality of support pieces (C) Step of picking up the support piece from the adhesive layer with the first suction collet (D) Step of transporting the support piece to the intermediate stage by the first suction collet (E) Intermediate stage Step of picking up the upper support piece with the second suction collet (F) The support piece transported by the second suction collet is placed around the first chip on the substrate on which the first chip is arranged. Step of crimping (G) Step of preparing a chip with an adhesive piece provided with a second chip and an adhesive piece provided on one surface of the second chip (H) On the surface of a plurality of support pieces A plurality of support pieces are arranged around the first chip by carrying out a series of steps (C) to (F) for constructing the dolmen structure by arranging the adhesive piece-tid chips a plurality of times. The support piece forming film is one of the following films.
-A film composed of a thermosetting resin layer-A multilayer film having a thermosetting resin layer and a resin layer having a higher rigidity than the thermosetting resin layer-The thermosetting resin layer and the thermosetting resin layer A multilayer film having a metal layer having a higher rigidity. The thermosetting resin layer may have lower or higher rigidity after thermosetting than the resin layer or the metal layer. Rigidity means the ability of an object to withstand fracture against bending or twisting.

In the above-mentioned manufacturing method according to the present disclosure, a support piece obtained by individualizing a support piece forming film is used. As a result, the process of manufacturing the support piece can be simplified as compared with the conventional manufacturing method in which a fragment of the semiconductor material obtained by dicing a semiconductor wafer is used as the support piece. That is, while the above-mentioned steps (1) to (6) have been conventionally required, since the support piece forming film does not include the semiconductor wafer, the back grind of the semiconductor wafer (1), (2) and The step (4) can be omitted. In addition, since a semiconductor wafer, which is more expensive than a resin material, is not used, the cost can be reduced. Since the thermosetting resin layer has adhesiveness to other members (for example, a substrate), it is not necessary to separately provide an adhesive layer or the like on the support piece.

In the above-mentioned manufacturing method according to the present disclosure, after the first adsorption collet picks up the support piece from the adhesive layer, the support piece is conveyed to the intermediate stage. Then, after the second suction collet picks up the support piece on the stage, the support piece is conveyed to a predetermined position on the substrate and crimped. By using the first suction collet and the second suction collet together, the support pieces can be efficiently arranged on the substrate as follows. That is, according to the study by the present inventors, in the step (F), for example, when a substrate heated to 100 ° C. or higher is crimped with an adsorption collet, the heat of the substrate is transferred to the adsorption collet and the temperature of the adsorption collet rises. Rise. When the suction collet whose temperature has risen is also used to pick up the support piece from the adhesive layer without using the two suction collets together, the heat of the suction collet is transferred to the support piece and the support piece and the adhesive layer are relatively strong. It may stick to and reduce the pick-up property. In addition, a part of the resin component contained in the support piece may flow and an error may occur in which a plurality of adjacent support pieces are picked up at the same time. On the other hand, by using the first adsorption collet and the second adsorption collet together, these problems can be sufficiently suppressed. Further, by using two adsorption collets together, the moving distance of each adsorption collet can be shortened, and the steps (C) and (F) can be simultaneously advanced, so that the semiconductor per unit time can be shortened. The production volume of the equipment can be increased.

By using the first suction collet and the second suction collet together, the visibility of the support piece in the step (C) is improved. In the step (C), the position of the support piece may be recognized by the camera and the support piece may be picked up by the first suction collet. Since the temperature of the first adsorption collet does not rise, it is possible to suppress the flow of a part of the resin component contained in the support piece, and it is possible to sufficiently maintain a state in which the outline of the support piece is clear. On the other hand, from the viewpoint of arranging the support piece at a predetermined position on the substrate with high accuracy, in the step (E), the position and orientation of the support piece on the intermediate stage are recognized by the camera and the second suction collet is used. It is preferable to pick up the support piece. From the viewpoint of visibility of the support piece on the intermediate stage, the color of the surface of the intermediate stage is preferably different from the color of the surface of the support piece.

According to the present disclosure, there is provided a method for manufacturing a semiconductor device, which can simplify the process of manufacturing a support piece used for manufacturing a semiconductor device having a dolmen structure and can efficiently arrange the support piece on a substrate. To.

FIG. 1 is a cross-sectional view schematically showing a first embodiment of the semiconductor device according to the present disclosure. 2 (a) and 2 (b) are plan views schematically showing an example of the positional relationship between the first chip and the plurality of support pieces. FIG. 3A is a plan view schematically showing an embodiment of a laminated film for forming a support piece, and FIG. 3B is a cross-sectional view taken along the line bb of FIG. 3A. FIG. 4 is a cross-sectional view schematically showing a step of bonding the adhesive layer and the support piece forming film. 5 (a) to 5 (c) are cross-sectional views schematically showing a manufacturing process of a support piece. FIG. 6A is a cross-sectional view schematically showing a state in which the support piece is picked up from the adhesive layer by the first suction collet, and FIG. 6B is a cross-sectional view showing the support piece on the intermediate stage by the second suction collet. FIG. 6 (c) is a cross-sectional view schematically showing a state of picking up, and FIG. 6 (c) is a cross-sectional view schematically showing a state of crimping a support piece to a predetermined position on a substrate with a second suction collet. FIG. 7 is a cross-sectional view schematically showing an example of a chip with an adhesive piece. FIG. 8 is a cross-sectional view schematically showing a dolmen structure formed on the substrate. FIG. 9 is a cross-sectional view schematically showing a second embodiment of the semiconductor device according to the present disclosure. 10 (a) and 10 (b) are cross-sectional views schematically showing other embodiments of a laminated film for forming a support piece.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, in this specification, "(meth) acrylic acid" means acrylic acid or methacrylic acid, and "(meth) acrylate" means acrylate or the corresponding methacrylate. “A or B” may include either A or B, or both.

In the present specification, the term "layer" includes not only a structure having a shape formed on the entire surface but also a structure having a shape partially formed when observed as a plan view. Further, in the present specification, the term "process" is used not only as an independent process but also as a term as long as the desired action of the process is achieved even when it cannot be clearly distinguished from other processes. included. In addition, the numerical range indicated by using "~" indicates a range including the numerical values before and after "~" as the minimum value and the maximum value, respectively.

In the present specification, the content of each component in the composition is the total amount of the plurality of substances present in the composition unless otherwise specified, when a plurality of substances corresponding to each component are present in the composition. means. Further, unless otherwise specified, the exemplary materials may be used alone or in combination of two or more. Further, in the numerical range described stepwise in the present specification, the upper limit value or the lower limit value of the numerical range of one step may be replaced with the upper limit value or the lower limit value of the numerical range of another step. Further, in the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

<First Embodiment>
(Semiconductor device)
FIG. 1 is a cross-sectional view schematically showing a semiconductor device according to the present embodiment. The semiconductor device 100 shown in this figure includes a substrate 10, a chip T1 (first chip) arranged on the surface of the substrate 10, and a plurality of chips T1 arranged on the surface of the substrate 10 and around the chip T1. The support piece Dc, the chip T2 (second chip) arranged above the chip T1, the adhesive piece Tc sandwiched between the chip T2 and the plurality of support pieces Dc, and the chip T2 are laminated. A plurality of wires w that electrically connect the chips T3 and T4, electrodes (not shown) on the surface of the substrate 10 and the chips T1 to T4, respectively, and a seal filled in a gap between the chips T1 and T2 and the like. A stopper 50 is provided.

In the present embodiment, a dolmen structure is formed on the substrate 10 by a plurality of support pieces Dc, a chip T2, and an adhesive piece Tc located between the support piece Dc and the chip T2. The chip T1 is separated from the adhesive piece Tc. By appropriately setting the thickness of the support piece Dc, it is possible to secure a space for the wire w connecting the upper surface of the chip T1 and the substrate 10.

The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing the warp of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 300 μm, and may be 90 to 210 μm.

The chip T1 is, for example, a controller chip, which is adhered to the substrate 10 by an adhesive piece Tc and electrically connected to the substrate 10 by a wire w. The shape of the chip T1 in a plan view is, for example, a rectangle (square or rectangle). The length of one side of the chip T1 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm. The thickness of the chip T1 is, for example, 10 to 150 μm, and may be 20 to 100 μm.

The chip T2 is, for example, a memory chip, and is adhered onto the support piece Dc via the adhesive piece Tc. In plan view, the chip T2 has a larger size than the chip T1. The shape of the chip T2 in a plan view is, for example, a rectangle (square or rectangle). The length of one side of the chip T2 is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the chip T2 is, for example, 10 to 170 μm, and may be 20 to 120 μm. The chips T3 and T4 are also memory chips, for example, and are adhered onto the chip T2 via an adhesive piece Tc. The length of one side of the chips T3 and T4 may be the same as that of the chip T2, and the thickness of the chips T3 and T4 may be the same as that of the chip T2.

The support piece Dc acts as a spacer that forms a space around the chip T1. The support piece Dc is made of a cured product of a thermosetting resin composition. In addition, as shown in FIG. 2A, two support pieces Dc (shape: rectangle) may be arranged at positions separated from each other on both sides of the chip T1, or as shown in FIG. 2B. One support piece Dc (shape: square, total of four) may be arranged at a position corresponding to the corner of the chip T1. The length of one side of the support piece Dc in a plan view is, for example, 20 mm or less, and may be 1 to 20 mm or 1 to 12 mm. The thickness (height) of the support piece Dc is, for example, 10 to 180 μm, and may be 20 to 120 μm.

(Method of manufacturing support piece)
The method for manufacturing the support piece according to the present embodiment includes the following steps.
(A) A step of preparing a support piece forming laminated film 20 (hereinafter, sometimes referred to as "laminated film 20") including a base film 1, an adhesive layer 2, and a support piece forming film D in this order. (See FIG. 3 (a) and FIG. 3 (b))
(B) A step of forming a plurality of support pieces Da on the surface of the adhesive layer 2 by individualizing the support piece forming film D (see FIG. 5C).
The support piece Dc shown in FIG. 1 is after the thermosetting tree composition has been cured. On the other hand, the support piece Da is in a state before the thermosetting tree composition is completely cured.

[Step (A)]
The laminated film 20 includes a base film 1, an adhesive layer 2, and a support piece forming film D. The base film 1 is, for example, a polyethylene terephthalate film (PET film) or a polyolefin film. The adhesive layer 2 is formed in a circular shape by punching or the like (see FIG. 3A). The adhesive layer 2 is made of an ultraviolet curable adhesive. That is, the adhesive layer 2 has a property that the adhesiveness is lowered by being irradiated with ultraviolet rays. The support piece forming film D is formed in a circular shape by punching or the like, and has a diameter smaller than that of the adhesive layer 2 (see FIG. 3A). The support piece forming film D is made of a thermosetting resin composition.

The thermosetting resin composition constituting the support piece forming film D can be in a semi-cured (B stage) state and then in a completely cured product (C stage) state by a subsequent curing treatment. The thermosetting resin composition contains an epoxy resin, a curing agent, and an elastomer (for example, an acrylic resin), and further contains an inorganic filler, a curing accelerator, and the like, if necessary. Details of the thermosetting resin composition constituting the support piece forming film D will be described later.

The laminated film 20 is, for example, a second laminated film having a base film 1 and an adhesive layer 2 on the surface thereof, and a cover film 3 and a support piece forming film D on the surface thereof. It can be produced by laminating with a film (see FIG. 4). The first laminated film is obtained through a step of forming an adhesive layer on the surface of the base film 1 by coating and a step of processing the adhesive layer into a predetermined shape (for example, a circle) by punching or the like. The second laminated film has a step of forming a support piece forming film on the surface of the cover film 3 (for example, PET film or polyethylene film) by coating, and a predetermined shape (for example, by punching the support piece forming film). For example, it is obtained through a process of processing into a circular shape. When using the laminated film 20, the cover film 3 is peeled off at an appropriate timing.

[Step (B)]
As shown in FIG. 5A, the dicing ring DR is attached to the laminated film 20. That is, the dicing ring DR is attached to the adhesive layer 2 of the laminated film 20, and the support piece forming film D is arranged inside the dicing ring DR. The support piece forming film D is individualized by dicing (see FIG. 5B). As a result, a large number of support pieces Da can be obtained from the support piece forming film D. After that, the adhesive layer 2 is irradiated with ultraviolet rays to reduce the adhesive force between the adhesive layer 2 and the support piece Da. After the irradiation with ultraviolet rays, as shown in FIG. 5C, the base film 1 is expanded to separate the support pieces Da from each other.

(Manufacturing method of semiconductor device)
A method of manufacturing the semiconductor device 100 will be described. The manufacturing method according to the present embodiment includes a step of forming a plurality of support pieces Da on the surface of the adhesive layer 2 through the steps (A) and (B) described above, and the following steps.
(C) A step of picking up the support piece Da from the adhesive layer 2 with the first suction collet C1 (see FIG. 6A).
(D) A step of transporting the support piece Da to the intermediate stage S by the first suction collet C1 (E) A step of picking up the support piece Da on the intermediate stage S by the second suction collet C2 (see FIG. 6B). )
(F) A step of crimping the support piece Da conveyed by the second suction collet C2 on the substrate 10 on which the first chip T1 is arranged and around the first chip T1 (FIG. 6C). reference)
(G) A step of preparing a chip T2a with an adhesive piece, which includes a second chip T2 and an adhesive piece Ta provided on one surface of the second chip T2 (see FIG. 7).
(H) A step of constructing a dolmen structure by arranging a chip T2a with an adhesive piece on the surface of a plurality of support pieces Dc (see FIG. 8).
(I) A step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (see FIG. 1).
By carrying out the series of steps (C) to (F) a plurality of times, a plurality of support pieces Da are arranged around the first chip T1.

[Step (C)]
The step (C) is a step of picking up the support piece Da from the adhesive layer 2. First, by irradiating the adhesive layer 2 with ultraviolet rays, the adhesive force between the adhesive layer 2 and the support piece Da is reduced. After that, as shown in FIG. 6A, the support piece Da is peeled off from the adhesive layer 2 by pushing up the support piece Da with the push-up jig P, and the support piece Da is sucked by the first suction collet C1. To pick up. When the support piece Da is picked up by the first suction collet C1, the position of the target support piece Da is recognized by a camera (not shown), and the central portion of the surface of the support piece Da is set by the first suction collet C1. Suction. The curing reaction of the thermosetting resin may be allowed to proceed by heating the support piece forming film D before dicing or the support piece Da before picking up. Excellent pick-up property can be achieved by appropriately curing the support piece Da when picking up.

[Step (D)]
The step (D) is a step of transporting the support piece Da to the intermediate stage S by the first suction collet C1. After the first suction collet C1 is conveyed to the intermediate stage S in a state where the support piece Da is sucked by the first suction collet C1, the support piece Da is placed on the intermediate stage S by releasing the suction.

[Step (E)]
The step (E) is a step of picking up the support piece Da on the intermediate stage S by the second suction collet C2 as shown in FIG. 6 (b). In the step (E), the position and orientation of the support piece Da on the intermediate stage S are recognized, and the support piece Da is picked up by the second suction collet C2. By transporting the support piece Da to the position to be crimped on the substrate 10 by the second suction collet C2 while the position and orientation of the support piece Da are grasped, the support piece Da can be transferred with high accuracy in the step (F). It can be positioned.

[Step (F)]
The step (F) is a step of crimping the support piece Da carried by the second suction collet C2 on the substrate 10 on which the first chip T1 is arranged and around the first chip T1. A pressing force is applied to the support piece Da in the direction of the substrate 10 by the second suction collet C2. Through this step, the structure 30 shown in FIG. 6C is produced. The structure 30 includes a substrate 10, a chip T1 arranged on the surface thereof, and a plurality of support pieces Da. The support piece Da may be arranged by crimping. The surface temperature of the substrate 10 may be, for example, 60 to 180 ° C. For other crimping treatments, for example, the pressing pressure may be 0.01 to 0.50 MPa and the treatment time may be 0.5 to 3.0 seconds. The support piece Da may be completely cured at the time of the step (F) to become the support piece Dc, and may not be completely cured at this time. It is preferable that the support piece Da is completely cured to become the support piece Dc before the start of the step (H).

[Step (G)]
The step (G) is a step of preparing the adhesive chip T2a shown in FIG. 7. The adhesive piece T2a includes a chip T2 and an adhesive piece Ta provided on the surface of one of the chips T2. The chip T2a with an adhesive piece can be obtained through a dicing step and a pick-up step using, for example, a semiconductor wafer and a dicing / die bonding integrated film.

[Step (H)]
The step (H) is a step of arranging the chip T2a with the adhesive piece above the chip T1 so that the adhesive piece Ta is in contact with the upper surface of the plurality of support pieces Dc. Specifically, the chip T2 is crimped to the upper surface of the support piece Dc via the adhesive piece Ta. This crimping treatment is preferably carried out for 0.5 to 3.0 seconds under the conditions of, for example, 80 to 180 ° C. and 0.01 to 0.50 MPa. Next, the adhesive piece Ta is cured by heating. This curing treatment is preferably carried out for 5 minutes or more under the conditions of, for example, 60 to 175 ° C. and 0.01 to 1.0 MPa. As a result, the adhesive piece Ta is cured to become the adhesive piece Tc. Through this step, a dolmen structure is constructed on the substrate 10 (see FIG. 8).

After the step (H) and before the step (I), the chip T3 is placed on the chip T2 via the adhesive piece, and further, the chip T4 is placed on the chip T3 via the adhesive piece. .. The adhesive piece may be any thermosetting resin composition similar to the above-mentioned adhesive piece Ta, and becomes an adhesive piece Tc by heat curing (see FIG. 1). On the other hand, the chips T2, T3 and T4 and the substrate 10 are electrically connected by wires w. The number of chips stacked above the chip T1 is not limited to the three in this embodiment, and may be appropriately set.

[Step (I)]
The step (I) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50. Through this step, the semiconductor device 100 shown in FIG. 1 is completed.

(Thermosetting resin composition constituting the support piece forming film)
As described above, the thermosetting resin composition constituting the support piece forming film D contains an epoxy resin, a curing agent, and an elastomer, and further contains an inorganic filler, a curing accelerator, and the like, if necessary. According to the studies by the present inventors, it is preferable that the support piece Da and the support piece Dc after curing have the following characteristics.
-Characteristic 1: When the support piece Da is thermocompression-bonded to a predetermined position on the substrate 10, misalignment is unlikely to occur (the melt viscosity of the support piece Da at 120 ° C. is, for example, 4300 to 50,000 Pa · s or 5000 to 40,000 Pa · s. To be)
-Characteristic 2: The support piece Dc exhibits stress relaxation property in the semiconductor device 100 (the thermosetting resin composition contains an elastomer (rubber component)).
-Characteristic 3: The adhesive strength of the chip with the adhesive piece to the adhesive piece Tc is sufficiently high (the die share strength of the support piece Dc with respect to the adhesive piece Tc is, for example, 2.0 to 7.0 Mpa or 3.0 to 3.00. (Being 6.0 Mpa)
-Characteristic 4: The shrinkage rate due to curing is sufficiently small.-Characteristic 5: The visibility of the support piece Da by the camera in the pickup process is good (the thermosetting resin composition contains, for example, a colorant). )
-Characteristic 6: The support piece Dc has sufficient mechanical strength.

[Epoxy resin]
The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol S type epoxy resin, novolak type epoxy resins such as phenol novolac type epoxy resin and cresol novolac type epoxy resin can be used. Further, generally known ones such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic epoxy resin, and an alicyclic epoxy resin can be applied. These may be used alone or in combination of two or more.

[Hardener]
Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines and acid anhydrides. Of these, phenolic resins are preferred from the perspective of achieving high die shear strength. Commercially available phenolic resins include, for example, LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Co., Ltd. and HE-100C-30 (trade name, phenyl araquil type) manufactured by Air Water Inc. Phenolic resin), Phenolite KA and TD series manufactured by DIC Co., Ltd., Millex XLC-series and XL series manufactured by Mitsui Chemicals Co., Ltd. (for example, Millex XLC-LL), HE series manufactured by Air Water Inc. ( For example, HE100C-30), MEHC-7800 series manufactured by Meiwa Kasei Co., Ltd. (for example, MEHC-7800-4S), and JDPP series manufactured by JEF Chemical Co., Ltd. can be mentioned. These may be used alone or in combination of two or more.

The blending amount of the epoxy resin and the phenol resin is preferably such that the equivalent ratio of the epoxy equivalent and the hydroxyl group equivalent is 0.6 to 1.5, and is 0.7 to 1.4, respectively, from the viewpoint of achieving high die shear strength. More preferably, it is more preferably 0.8 to 1.3. When the compounding ratio is within the above range, it is easy to achieve both curability and fluidity at a sufficiently high level.

[Elastomer]
Examples of the elastoma include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene and carboxy-modified acrylonitrile.

From the viewpoint of achieving high die shear strength, an acrylic resin is preferable as the elastoma, and further, an epoxy group-containing epoxy group obtained by polymerizing an epoxy group such as glycidyl acrylate or glycidyl methacrylate or a functional monomer having a glycidyl group as a crosslinkable functional group. Acrylic resins such as (meth) acrylic copolymers are more preferable. Among the acrylic resins, epoxy group-containing (meth) acrylic acid ester copolymers and epoxy group-containing acrylic rubbers are preferable, and epoxy group-containing acrylic rubbers are more preferable. The epoxy group-containing acrylic rubber is a rubber having an epoxy group, which is mainly composed of an acrylic acid ester as a main component, a copolymer such as butyl acrylate and acrylonitrile, and a copolymer such as ethyl acrylate and acrylonitrile. The acrylic resin may have not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.

Commercially available acrylic resin products include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 solvent modified products manufactured by Nagase Chemtech Co., Ltd. (trade name, acrylic rubber, weight). Average molecular weight: 800,000, Tg: 12 ° C., solvent is cyclohexanone) and the like.

The glass transition temperature (Tg) of the acrylic resin is preferably −50 to 50 ° C., more preferably -30 to 30 ° C. from the viewpoint of achieving high die shear strength. The weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3 million, more preferably 500,000 to 2 million, from the viewpoint of achieving high die shear strength. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene. By using an acrylic resin having a narrow molecular weight distribution, a highly elastic adhesive piece tends to be formed.

The amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass with respect to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent from the viewpoint of achieving high die shear strength. More preferably, it is 20 to 100 parts by mass.

[Inorganic filler]
Inorganic fillers include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride and crystalline. Examples include silica and amorphous silica. These may be used alone or in combination of two or more.

The average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 to 0.5 μm, from the viewpoint of achieving high die shear strength. The surface of the inorganic filler is preferably chemically modified from the viewpoint of achieving high die shear strength. (Additional note) Silane coupling agents are suitable as materials for chemically modifying the surface. Examples of the types of functional groups of the silane coupling agent include vinyl group, acryloyl group, epoxy group, mercapto group, amino group, diamino group, alkoxy group and ethoxy group.

From the viewpoint of achieving high die shear strength, the content of the inorganic filler is preferably 20 to 200 parts by mass and 30 to 100 parts by mass with respect to 100 parts by mass of the resin component of the thermosetting resin composition. Is more preferable.

[Curing accelerator]
Examples of the curing accelerator include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high die shear strength, imidazole-based compounds are preferable. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.

The content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass with respect to 100 parts by mass in total of the epoxy resin and the epoxy resin curing agent from the viewpoint of achieving high die shear strength, and is 0. .04 to 0.2 parts by mass is more preferable.

<Second embodiment>
FIG. 9 is a cross-sectional view schematically showing the semiconductor device according to the second embodiment. In the semiconductor device 100 according to the first embodiment, the chip T1 is separated from the adhesive piece Tc, whereas in the semiconductor device 200 according to the present embodiment, the chip T1 is in contact with the adhesive piece Tc. .. That is, the adhesive piece Tc is in contact with the upper surface of the chip T1 and the upper surface of the support piece Dc. For example, by appropriately setting the thickness of the support piece forming film D, the position of the upper surface of the chip T1 and the position of the upper surface of the support piece Dc can be matched.

In the semiconductor device 200, the chip T1 is connected to the substrate 10 by a flip chip instead of wire bonding. If the chip T2 is embedded in the adhesive piece Ta constituting the adhesive piece T2a together with the chip T2, the chip T1 is in contact with the adhesive piece Tc even in the mode in which the chip T1 is wire-bonded to the substrate 10. Can be in the state of

Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above embodiments. For example, in the above embodiment, the laminated film 20 having the ultraviolet curable adhesive layer 2 is illustrated, but the adhesive layer 2 may be a pressure sensitive type. The pressure-sensitive adhesive layer may or may not contain a resin having a carbon-carbon double bond having photoreactivity. For example, the adhesive layer may be one in which the adhesiveness of the predetermined region is lowered by irradiating the predetermined region with ultraviolet rays, and for example, a resin having a carbon-carbon double bond having photoreactivity may be used. It may remain.

In the above embodiment, as shown in FIG. 3B, a support piece forming laminated film 20 including a support piece forming film D made of a thermosetting resin layer is illustrated, but the support piece forming laminated film is illustrated. , It may be provided with a multilayer film having a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer. The laminated film 20A for forming a support piece shown in FIG. 10A is a two-layer film D2 (for forming a support piece) having a thermosetting resin layer 5 and a resin layer 6 having a higher rigidity than the thermosetting resin layer. Film). That is, in the support piece forming laminated film 20A, the thermosetting resin layer 5 is arranged between the adhesive layer 2 and the outermost resin layer 6. The thermosetting resin layer 5 is made of a thermosetting resin composition constituting the support piece forming film D according to the first embodiment. The thickness of the resin layer 6 is, for example, 5 to 100 μm, and may be 10 to 90 μm or 20 to 80 μm. The resin layer 6 is, for example, a polyimide layer.

The laminated film 20B for forming a support piece shown in FIG. 10B has a resin layer 6 having a higher rigidity than a thermosetting resin layer and a two-layer thermosetting resin layer 5 sandwiching the resin layer 6. It has a layer film D3 (a film for forming a support piece). In the support piece forming laminated film 20B, the three-layer film D3 is arranged on the surface of the adhesive layer 2.

The laminated films 20A and 20B for forming support pieces include a resin layer 6 having a higher rigidity than the thermosetting resin layer 5, so that the thermosetting resin layer 5 is heat-cured after being individualized by dicing. Excellent pick-up performance can be achieved without performing processing. In the support piece forming laminated films 20A and 20B, a metal layer (for example, a copper layer or an aluminum layer) higher than the thermosetting resin layer may be adopted instead of the resin layer 6. The thickness of the metal layer is, for example, 5 to 100 μm, and may be 10 to 90 μm or 20 to 80 μm. By including the metal layer in the laminated films 20A and 20B for forming the support piece, in addition to the excellent pick-up property, the optical contrast between the resin material and the metal material can achieve excellent visibility of the support piece in the pick-up process. ..

The laminated film 20A for forming a support piece can be manufactured, for example, through the following steps.
-A step of preparing a laminated film including a base film 1, an adhesive layer 2, and a thermosetting resin layer 5 in this order.-A resin having a higher rigidity than the thermosetting resin layer 5 on the surface of the laminated film. Step of laminating layer 6 or metal layer

According to the present disclosure, there is provided a method for manufacturing a semiconductor device, which can simplify the process of manufacturing a support piece used for manufacturing a semiconductor device having a dolmen structure and can efficiently arrange the support piece on a substrate. To.

1 ... Base film, 2 ... Adhesive layer, 5 ... Thermocurable resin layer, 6 ... Resin layer, 10 ... Substrate, 20, 20A, 20B ... Laminated film for forming support pieces, 50 ... Encapsulant, 100, 200 ... Semiconductor device, C1 ... First adsorption collet, C2 ... Second adsorption collet, D ... Support piece forming film, D2 ... Double layer film (support piece forming film), D3 ... Three layer film (support piece forming) Film), Da ... Support piece, Dc ... Support piece (cured product), T1 ... First chip, T2 ... Second chip, T2a ... Adhesive piece chip, Ta ... Adhesive piece, Tc ... Adhesive piece (Hardened product)

Claims (5)

A substrate, a first chip arranged on the substrate, a plurality of support pieces arranged on the substrate and around the first chip, and the first support piece supported by the plurality of support pieces. A method for manufacturing a semiconductor device having a dolmen structure including a second chip arranged so as to cover one chip.
(A) A step of preparing a laminated film including a base film, an adhesive layer, and a support piece forming film in this order.
(B) A step of forming a plurality of support pieces on the surface of the adhesive layer by individualizing the support piece forming film.
(C) A step of picking up the support piece from the adhesive layer with the first adsorption collet, and
(D) A step of transporting the support piece to the intermediate stage by the first suction collet, and
(E) A step of picking up the support piece on the intermediate stage with a second suction collet, and
(F) A step of crimping the support piece conveyed by the second suction collet on the substrate on which the first chip is arranged and around the first chip.
(G) A step of preparing a chip with an adhesive piece, which comprises a second chip and an adhesive piece provided on one surface of the second chip.
(H) A step of constructing a dolmen structure by arranging the tip with the adhesive piece on the surface of the plurality of the support pieces.
Including
The support piece forming film is a film made of a thermosetting resin layer, or a multilayer film having a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer.
A method for manufacturing a semiconductor device, wherein a plurality of the support pieces are arranged around the first chip by carrying out a series of steps (C) to (F) a plurality of times. The method for manufacturing a semiconductor device according to claim 1, wherein in the step (F), the temperature of the substrate is 60 to 180 ° C. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein in the step (C), the position of the support piece is recognized by a camera and the support piece is picked up by the first suction collet. The method according to any one of claims 1 to 3, wherein in the step (E), the position and orientation of the support piece on the intermediate stage are recognized by a camera and the support piece is picked up by the second suction collet. Manufacturing method of semiconductor devices. The production method according to any one of claims 1 to 4, wherein the color of the surface of the intermediate stage is different from the color of the surface of the support piece.

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