JP2010020095A - Device for manufacturing liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device for manufacturing liquid crystal devices, which can form excellent inorganic alignment layers by preventing abnormal discharge from occurring to a sputtering device. <P>SOLUTION: The device for manufacturing the liquid crystal devices includes a film-forming chamber 2 and a sputtering device 3 which forms an inorganic alignment layer on a substrate with an alignment layer material, by means of a spattering method, in the film-forming chamber 2. The sputtering device 3 has a pair of targets 5a and 5b which face each other across a plasma generating area, an aperture part 3a which is provided at the end part, on the upper side (+Z side), of the sputtering device 3 and emits sputter particles 5p from the plasma generating area, and a first adhesion-preventing cover 11A which is provided so that it may extend from the lower end parts of the targets to the lower side (-Z side) and covers the inner wall of the sputtering device 3. An accommodation part 11s, which accommodates particles P which peel off and drop in the film-forming chamber 2 or in the sputtering device 3, is provided on the lower side of the first adhesion-preventing cover 11A. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an apparatus for manufacturing a liquid crystal device.

  2. Description of the Related Art A liquid crystal device used as a light modulation unit of a projection display device such as a liquid crystal projector has a configuration in which a sealing material is disposed at a peripheral portion between a pair of substrates and a liquid crystal layer is sealed at the center. Electrodes for applying a voltage to the liquid crystal layer are formed on the inner surfaces of the pair of substrates, and an alignment film for controlling the alignment of the liquid crystal molecules when a non-selective voltage is applied is formed on the inner surfaces of these electrodes. With such a configuration, the liquid crystal device modulates light source light based on a change in the orientation of liquid crystal molecules when a non-selection voltage is applied and when a selection voltage is applied, thereby forming a display image.

  By the way, as the alignment film described above, a film obtained by rubbing the surface of a polymer film made of polyimide or the like to which a side chain alkyl group is added is generally used. However, although such a rubbing method is simple, various disadvantages have been pointed out in order to impart alignment characteristics to the polyimide film by physically rubbing the polyimide film. Specifically, (1) it is difficult to ensure uniformity of orientation, (2) traces are likely to remain during rubbing, (3) control of orientation direction and selective pretilt angle. Control is not possible, and it is not suitable for a liquid crystal panel using a multi-domain used to obtain a wide viewing angle. (4) The breakdown of the thin film transistor element or the alignment film due to static electricity from the glass substrate. Resulting in a decrease in yield, and (5) display defects due to the generation of dust from the rubbing cloth.

  In addition, when such an alignment film made of an organic material is used in a device equipped with a high output light source such as a liquid crystal projector, the organic material is damaged by light energy, resulting in alignment failure. In particular, when the projector is downsized and the brightness is increased, the energy per unit area incident on the liquid crystal panel is increased, the polyimide itself is decomposed by the absorption of incident light, and the light is absorbed. The decomposition is further accelerated by heat generation. As a result, a great deal of damage is added to the alignment film, and the display characteristics of the device deteriorate.

Therefore, in order to eliminate such inconvenience, by performing sputtering so that the sputtered particles emitted from the target are incident on the substrate obliquely from one direction, a plurality of columnar crystals grown in an oblique direction with respect to the substrate. A method of forming an alignment film made of an inorganic material having a structure has been proposed (see, for example, Patent Document 1). According to such a method, the obtained inorganic alignment film is expected to have high reliability.
JP 2007-286401 A

  However, in the above conventional sputtering apparatus, when the sputtered film deposited inside the apparatus peels off and particles fall and deposit on the lower side of the sputtering apparatus, the deposited particles come into contact with the target and cause abnormal discharge. There is. Further, when the generated film is an insulating film, there is a problem that the inside of the device is covered with the insulating film and the function of the anode is lost and abnormal discharge occurs. When such abnormal discharge occurs in the sputtering apparatus, the film quality of the inorganic alignment film formed on the substrate is deteriorated.

  Accordingly, the present invention provides an apparatus for manufacturing a liquid crystal device capable of preventing the occurrence of abnormal discharge in a sputtering apparatus and forming a good inorganic alignment film.

  In order to solve the above problems, a liquid crystal device manufacturing apparatus of the present invention includes a liquid crystal layer sandwiched between a pair of opposing substrates, and an inorganic alignment film is formed on the inner surface side of at least one of the substrates. An apparatus for manufacturing a liquid crystal device comprising: a film forming chamber; and a sputtering apparatus for forming an inorganic alignment film by forming an alignment film material on the substrate by a sputtering method in the film forming chamber. The apparatus includes a pair of targets facing each other across the plasma generation region, an opening provided at an upper end portion of the sputtering apparatus for emitting sputtered particles from the plasma generation region, and a lower side from the lower end portion of the target And a first deposition cover that covers the inner wall of the sputtering apparatus, and is peeled inside the film formation chamber or the sputtering apparatus on the lower side of the first deposition cover. Then fall And wherein the accommodating portion for accommodating the particles is provided.

With this configuration, when the sputtered film deposited on the inner wall of the film forming chamber or the inner wall of the sputtering apparatus is peeled off to generate particles, and the particles fall to the lower side of the sputtering apparatus, the particles It is accommodated in the accommodating portion of the protective cover. Here, the first deposition cover is formed so as to extend downward from the lower ends of the pair of targets, and the housing portion is provided on the lower side of the first deposition cover. That is, the accommodating part is provided in the position away from the target below the target. Therefore, it is possible to prevent the particles accommodated in the accommodating portion from contacting the target.
Therefore, according to the present invention, it is possible to prevent contact between the particles deposited below the sputtering apparatus and the target, prevent abnormal discharge from occurring in the sputtering apparatus, and form a favorable inorganic alignment film. . In addition, since particles can be stored and stored in the storage unit, contact between the particles and the target can be continuously prevented until the particle storage capacity of the storage unit reaches a limit. Thereby, the maintenance frequency of a manufacturing apparatus can be reduced and productivity can be improved.

  Further, in the liquid crystal device manufacturing apparatus according to the present invention, the sputtering apparatus has a second deposition cover in the vicinity of the opening, and the dimension of the first deposition cover in the emission direction of the sputtered particles is The dimension is larger than the dimension of the second deposition cover in the discharge direction.

  With this configuration, even when the sputtered particles adhere to the first and second deposition covers and the sputter film is formed, even when the surface of the second deposition cover is covered with the sputter film. A region that is not covered with the sputtered film can remain on the surface of the first deposition cover. That is, by making the dimension of the first deposition cover in the emission direction of the sputtered particles larger than the dimension of the second deposition cover, the first deposition cover is placed on the first deposition cover from the target rather than the second deposition cover. A remote area is formed, and it is possible to make it difficult to attach sputtered particles to the area. Thereby, even if the second deposition cover is insulated and the anode function is lost, the first deposition cover can leave an uninsulated portion, and the anode function can be maintained. Thereby, the maintenance cycle of the first deposition cover can be made longer than the maintenance cycle of the second deposition cover. Therefore, the maintenance of the first deposition cover can be performed simultaneously with the second deposition cover, and the maintenance can be facilitated.

  In the apparatus for manufacturing a liquid crystal device of the present invention, the sputtering apparatus is provided with a gas nozzle that penetrates the first deposition cover and supplies a sputtering gas to the plasma generation region. Further, the plasma generation region is disposed on the plasma generation region side with respect to the housing portion and outside the plasma generation region.

By comprising in this way, it is prevented that the gas flow of the sputtering gas ejected from the front-end | tip of a gas nozzle and the particle accommodated in the accommodating part of the 1st adhesion prevention cover contact directly. Thereby, it is possible to prevent particles from being blown up by the gas flow of the sputtering gas. Therefore, it is possible to prevent particles from adhering to the target, to prevent abnormal discharge of the sputtering apparatus, and to form an inorganic alignment film having good film quality.
Further, by disposing the tip of the gas nozzle outside the plasma generation region, it is possible to prevent the nozzle from being adversely affected by the plasma. In addition, the sputtering gas can be supplied more uniformly to the plasma generation region to stabilize the film formation conditions of the sputtering apparatus, and an inorganic alignment film having a good film quality can be formed.

  In the liquid crystal device manufacturing apparatus according to the present invention, the accommodating portion is provided by extending the first deposition cover in a horizontal direction or a downward direction in the vertical direction.

  By comprising in this way, the capacity | capacitance of an accommodating part can be increased and more particles can be accommodated now. In addition, the particles in the housing portion are further away from the target and are less likely to contact the target. Therefore, according to the present invention, it is possible to form an inorganic alignment film having a good film quality by reducing the maintenance frequency and preventing abnormal discharge of the sputtering apparatus.

  In the liquid crystal device manufacturing apparatus of the present invention, a particle trap is provided on the inner side surface of the first deposition cover to prevent the particles collected in the housing portion from moving to the target side. It is characterized by being. Further, the particle trap is a plurality of step portions provided on an inner surface of the first deposition cover. Further, the particle trap is a plurality of fin-like members erected on the inner surface of the first deposition cover.

  With this configuration, after the particles that have fallen off from the inside of the film forming chamber or the sputtering apparatus are accommodated in the accommodating portion, the particles move in the target direction along the inner surface of the first deposition cover. To prevent contact. Therefore, according to the present invention, it is possible to prevent abnormal discharge of the sputtering apparatus and to form an inorganic alignment film having good film quality.

<First embodiment>
Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the technical scope of the present invention is not limited to the following embodiments. In the drawings used for the following description, the scale of each member is appropriately changed in order to make each member a recognizable size. In the following, description will be made using an orthogonal coordinate system in which the transport direction of the substrate is the X direction, the direction parallel to the film formation surface of the substrate and perpendicular to the X direction is the Y direction, and the thickness direction of the substrate is the Z direction. Further, the emission direction of the sputtered particles is Za direction, and the direction perpendicular to the target of the sputtering apparatus is Xa direction.

(Liquid crystal device manufacturing equipment)
FIG. 1A is a schematic configuration diagram showing an embodiment of a liquid crystal device manufacturing apparatus according to an embodiment of the present invention. FIG. 1B is a side view of the sputtering apparatus 3 observed in the Xa direction.
As shown in FIG. 1A, the manufacturing apparatus 1 is an apparatus that forms an inorganic alignment film on a substrate W, which is a constituent member of a liquid crystal device, by sputtering. The manufacturing apparatus 1 includes a film forming chamber 2 that is a vacuum chamber that accommodates a substrate W, and a sputtering apparatus 3 that forms an alignment film made of an inorganic material on the surface of the substrate W by a sputtering method.

The sputtering apparatus 3 includes a first gas supply unit 21 that circulates an argon gas for discharge in the plasma generation region.
The film forming chamber 2 includes second gas supply means 22 that supplies oxygen gas as a reaction gas that reacts with the alignment film material flying on the substrate W accommodated therein to form an inorganic alignment film. .
An exhaust controller 20 for controlling the internal pressure of the film forming chamber 2 and obtaining a desired degree of vacuum is connected to the film forming chamber 2 via a pipe 20a. Further, an apparatus connecting portion 25 that forms a connecting portion with the sputtering apparatus 3 is formed so as to protrude outward from the lower wall surface of the film forming chamber 2 in the figure.

  The apparatus connecting portion 25 is formed to extend obliquely at a predetermined angle (θ1) with the normal direction (Z-axis direction in the drawing) of the substrate W accommodated in the film forming chamber 2. . In addition, the apparatus connecting portion 25 is configured so that the sputtering apparatus 3 connected to the tip end portion thereof can be arranged obliquely with respect to the substrate W at a predetermined angle.

  The second gas supply means 22 is connected to the side opposite to the exhaust control device 20 with respect to the device connection portion 25, and oxygen gas supplied from the second gas supply means 22 is formed as shown by an arrow 22f. The film chamber 2 flows from the + X side to the exhaust control device 20 side via the substrate W in the illustrated -X direction.

  In an actual manufacturing apparatus, a load lock chamber that enables loading / unloading of the substrate W in a state where the degree of vacuum of the film forming chamber 2 is maintained is provided outside the film forming chamber 2 in the X-axis direction. An exhaust control device that independently adjusts the load lock chamber to a vacuum atmosphere is also connected. The load lock chamber and the film formation chamber 2 are connected via a gate valve that hermetically closes the chamber. With this configuration, the substrate W can be taken in and out without releasing the film formation chamber 2 to the atmosphere.

The sputtering apparatus 3 is a counter target type sputtering apparatus in which two targets 5a and 5b are arranged to face each other.
The first target 5a is attached to the substantially flat plate-like first electrode 9a, and the second target 5b is attached to the substantially flat plate-like second electrode 9b. The targets 5a and 5b supported by the electrodes 9a and 9b are made of a material containing a constituent material of an inorganic alignment film formed on the substrate W, for example, silicon. The targets 5a and 5b are elongated plate-like members extending in the Y direction in the figure (see FIG. 2), and are installed so that their opposing surfaces are substantially parallel to each other.

  The first electrode 9a and the second electrode 9b are mounted and supported on the first electrode support member 9A and the second electrode support member 9B, respectively. The first electrode 9a and the first electrode support member 9A, and the second electrode 9b and the second electrode support member 9B are electrically insulated from each other. The first electrode 9a is connected to a power source 4a composed of a DC power source or a high frequency power source, and the second electrode 9b is connected to a power source 4b composed of a DC power source or a high frequency power source. The plasma Pz is generated in the space (plasma generation region) where the targets 5a and 5b are opposed by the power supplied from the power sources 4a and 4b.

A first cooling means 8a for cooling the target 5a is provided on the opposite side of the first electrode 9a from the target 5a. A first refrigerant circulating means 18a is connected to the first cooling means 8a via a pipe or the like.
A second cooling means 8b for cooling the target 5b is provided on the opposite side of the second electrode 9b from the target 5b. A second refrigerant circulation means 18b is connected to the second cooling means 8b via a pipe or the like.

  The 1st cooling means 8a is formed in the substantially same planar dimension as the target 5a, as shown in FIG.1 (b). The first cooling means 8a is disposed at a position overlapping the target 5a in plan view via the first electrode 9a shown in FIG. Although not specifically shown, the second cooling unit 8b is also disposed at a position overlapping the target 5b in plan view. The cooling means 8a and 8b are provided with a refrigerant flow path for circulating the refrigerant therein, and the targets 5a and 5b are cooled by circulating the refrigerant supplied from the refrigerant circulation means 18a and 18b through the refrigerant flow path. To do. In addition, it is good also as a structure by which the 1st electrodes 9a and 9b serve as a cooling means by forming a refrigerant | coolant flow path inside the 1st electrodes 9a and 9b.

As shown in FIG. 1A, second magnetic field generating means 16a is arranged on the opposite side of the first electrode support member 9A from the first electrode 9a and the target 5a, and the second electrode of the first electrode support member 9B. 9b, the second magnetic field generating means 16b is disposed on the opposite side of the target 5b.
As shown in FIG. 1B, the first magnetic field generation means 16a is provided in a rectangular frame shape arranged along the outer peripheral edge of the rectangular target 5a. The first magnetic field generating means 16a is composed of a permanent magnet, an electromagnet, a magnet combining these, and the like, and is provided so as to surround the first cooling means 8a having a rectangular shape in a plan view. The second magnetic field generating means 16b surrounding the second cooling means 8b shown in FIG. 1A also has a rectangular frame shape similar to that of the first magnetic field generating means 16a.

  Therefore, the first magnetic field generating means 16a and the second magnetic field generating means 16b are arranged to face each other at the outer peripheral portions of the targets 5a and 5b arranged to face each other. Then, the magnetic field generating means 16a, 16b generate a magnetic field in the Xa direction surrounding the targets 5a, 5b in the sputtering apparatus 3, and the electronic restraining means for restraining electrons contained in the plasma Pz within the plasma generation region by the magnetic field. Is configured.

As shown in FIG. 1A, a transport tray 6 is provided in the film forming chamber 2 for holding the substrate W so that its processing surface (film forming surface) is horizontal (parallel to the XY plane). It has been.
The transfer tray 6 is connected to a moving means 6a for horizontally transferring the transfer tray 6 from the load lock chamber side (not shown) to the opposite side. The transport direction of the substrate W by the moving means 6a and the transport tray 6 is parallel to the X-axis direction in FIG. 1 and is orthogonal to the length direction (Y-axis direction) of the targets 5a and 5b.
The transport tray 6 is provided with a heater (heating means) 7 for heating the held substrate W. Further, the transport tray 6 is provided with a third cooling means 8c for cooling the held substrate W.

The heater 7 is connected to a control unit 7a having a power source and the like. The heater 7 is configured to heat the transport tray 6 to a desired temperature by a temperature raising operation via the control unit 7a, thereby heating the substrate W to the desired temperature.
On the other hand, the third cooling means 8c is connected to the third refrigerant circulating means 18c via a pipe or the like. Then, the third cooling unit 8c cools the transport tray 6 to a desired temperature by circulating the refrigerant supplied from the third refrigerant circulating unit 18c, and thereby cools the substrate W to the desired temperature. It is configured.

FIG. 2 is a diagram showing a configuration of the sputtering apparatus 3 shown in FIG. FIG. 2A is a plan view of the sputtering apparatus 3 as viewed from the film formation chamber 2 side. FIG. 2B is a cross-sectional view taken along the line GG ′ in FIG.
As shown in FIGS. 1 and 2, the first electrode support member 9 </ b> A and the second electrode support member 9 </ b> B that support the first electrode 9 a and the second electrode 9 b have one end (−Za side end) at their one end. A side wall member 19 is connected. Side wall members 9c and 9d are connected to both ends of the first electrode support member 9A and the second electrode support member 9B in the Y-axis direction, respectively.

  The first electrode support member 9A, the second electrode support member 9B, the side wall member 19, and the side wall members 9c and 9d constitute a box-shaped casing that serves as a vacuum chamber of the sputtering apparatus 3. However, the first electrode support member 9A, the second electrode support member 9B, and the side wall members 9c, 9d, and 19 constituting the box-shaped housing are insulated from each other. The box-shaped housing constituted by these mutually insulated members has an opening 3 a through which sputtered particles 5 p are discharged at the end opposite to the side wall member 19.

  The opening 3 a is arranged obliquely upward (+ Za direction) at an end on the upper side (+ Z side) in the vertical direction of the sputtering apparatus 3. The sputtering apparatus 3 is connected to the apparatus connecting portion 25 that is formed to project into the film forming chamber 2 through the opening 3a, and the inside of the box-shaped housing communicates with the inside of the film forming chamber 2 by such a connection structure. ing.

  A first deposition cover 11 </ b> A that covers the inner wall of the box-shaped housing is provided at the end opposite to the opening 3 a of the sputtering apparatus 3. The first deposition cover 11A is formed of a nonmagnetic material such as aluminum and is grounded. The first protective cover 11A is obliquely downward (in the −Za direction) from the lower end portion (−Z side) in the vertical direction of the targets 5a and 5b supported on the first electrode 9a and the second electrode 9b, respectively. ) To extend.

  The first deposition cover 11 </ b> A is formed in a box-shaped housing shape that covers the inner surfaces of the first electrode support member 9 </ b> A, the second electrode support member 9 </ b> B, and the side wall member 19. The box-shaped housing-shaped first deposition cover 11 </ b> A has an opening 11 a facing the plasma generation region on the upper side (+ Z side) in the vertical direction. In addition, the bottom portion 11 b on the lower side is provided with a storage portion 11 s for storing the particles P that have been peeled off in the film forming chamber 2 or the sputtering apparatus 3.

FIG. 3 is an enlarged cross-sectional view of the sputtering apparatus 3. In FIG. 3, the magnetic field generating means 16a and 16b, the cooling means 8a and 8b, etc. are not shown.
As shown in FIG. 3, the accommodating portion 11 s is provided by extending the bottom portion 11 b of the box-shaped housing-shaped first deposition cover 11 A obliquely downward (−Za direction) from the horizontal direction (X direction). It has been. The container 11s has a predetermined capacity in advance so that the particles P that are peeled off inside the film forming chamber 2 or the sputtering apparatus 3 and fall into the opening 11a can be continuously accumulated for a predetermined time. Is set.

  Further, a gas nozzle 19n is provided on the side wall member 19 disposed on the opposite side to the film forming chamber 2 with respect to the plasma generation region sandwiched between the targets 5a and 5b. As shown in FIG. 1, the first gas supply means 21 is connected to the gas nozzle 19n. The tip 19a of the gas nozzle 19n is disposed outside the plasma generation region on the side of the plasma generation region (the region where the targets 5a and 5b and the electrodes 9a and 9b face each other) with respect to the accommodating portion 11s.

  The argon gas supplied from the first gas supply means 21 is discharged from the tip of the gas nozzle 19n, flows into the plasma generation region, and flows into the film forming chamber 2 through the apparatus connection portion 25. Yes. The argon gas flowing into the film forming chamber 2 joins with the oxygen gas supplied from the second gas supply means 22 and circulated along the arrow 22f as shown by an arrow 21f in FIG. It flows to the 20 side.

  As shown in FIG. 3, a second deposition cover 11 </ b> B is provided in the vicinity of the opening 3 a of the sputtering apparatus 3. The second deposition cover 11B is formed of, for example, the same material as that of the first deposition cover 11A and is grounded. The second deposition cover 11B is provided so as to cover at least a part of the inner surface of the apparatus connection portion 25 and the inner surface of the film forming chamber 2, and is provided so as to slightly overlap the upper ends of the targets 5a and 5b. ing.

  Here, in this embodiment, the dimension La from the opening 11a to the bottom 11b of the first deposition cover 11A in the emission direction (+ Za direction) of the sputtered particles 5p of the sputtering apparatus 3 is the second deposition cover 11B. It is formed to be larger than the minimum dimension Lb in the + Za direction.

  In order to form the inorganic alignment film on the substrate W, which is a constituent member of the liquid crystal device, by the manufacturing apparatus 1, as shown in FIG. 1, argon gas is introduced from the first gas supply means 21 and ejected from the gas nozzle 19 n. Meanwhile, DC power (RF power) is supplied to the first electrode 9a and the second electrode 9b. Thereby, plasma Pz is generated in the space between the targets 5a and 5b, and argon ions or the like in the plasma atmosphere collide with the targets 5a and 5b. Then, the alignment film material (silicon) is sputtered from the targets 5a and 5b as sputtered particles 5p. Further, among the sputtered particles 5p contained in the plasma Pz, only the sputtered particles 5p flying from the plasma Pz to the opening 3a side are selectively released to the film forming chamber 2 side. Then, the sputtered particles 5p flying from the oblique direction on the surface of the substrate W and the oxygen gas flowing through the film formation chamber 2 are reacted on the substrate W, whereby an alignment film made of silicon oxide is formed on the substrate W. It comes to form.

In the manufacturing apparatus 1 of the present embodiment, as shown in FIG. 1, argon gas as a first sputtering gas is circulated along the Za direction to the film forming chamber 2 side, and the inside of the film forming chamber 2 is in the −X direction. The oxygen gas that is circulated in the gas is combined with the oxygen gas and then circulated in the −X direction. Further, the sputtering gas is smoothly circulated such that the angle formed by the flow direction of the oxygen gas that is the second sputtering gas and the flow direction of the argon gas is an acute angle.
Thereby, it is possible to prevent the gas flow from being disturbed at the junction of the oxygen gas and the argon gas, and it is possible to prevent the incident angle of the sputtered particles 5p with respect to the substrate W from varying.

  In this embodiment, the case where silicon oxide is formed on the substrate W by reacting silicon as the sputtered particles 5p with oxygen gas that is the second sputtering gas has been described. , 5b using, for example, silicon oxide (SiOx), aluminum oxide (AlOy, etc.), etc., and performing sputtering operation by inputting RF power to the targets 5a, 5b, these silicon oxide and aluminum oxide An inorganic alignment film made of can be formed on the substrate W. In this case, the second sputtering gas (oxygen gas) is allowed to flow in the film formation chamber 2 to prevent deviation of the formed inorganic alignment film from the oxide composition. The insulating properties of the film can be increased.

  Further, since the opposed target type sputtering apparatus 3 is disposed at a predetermined angle (θ1) with respect to the substrate W, the sputtered particles 5p emitted from the openings 3a of the sputtering apparatus 3 are obliquely inclined at a predetermined angle from the substrate. The light can enter the W film-forming surface. Then, an inorganic alignment film having a columnar structure oriented in one direction can be formed on the substrate W by depositing the sputtered particles 5p incident from an oblique direction in this way. Further, in the facing target type sputtering apparatus 3, sputtered particles that are not emitted from the opening 3a are mainly incident on the targets 5a and 5b and reused, so that extremely high target utilization efficiency can be obtained. . Further, in the sputtering apparatus 3, since the directivity of the sputtered particles 5p emitted from the opening 3a can be increased by narrowing the target interval, the incident angle of the sputtered particles 5p reaching the substrate W is highly controlled. Thus, the orientation of the columnar structure in the formed inorganic alignment film is also good.

When the film formation on the substrate W is performed for a predetermined time by the manufacturing apparatus 1, the inner wall of the film forming chamber 2, the inner wall of the sputtering apparatus 3, or the first and second cover 11A and 11A shown in FIG. In some cases, the sputtered film adhering to the surface of the cover 11B peels off and the particles P fall.
Here, when the particle P falls from the upper side (+ Z side) of the first deposition cover 11A, the particle P is provided so as to extend downward (−Z side) from the lower ends of the targets 5a and 5b. It falls to the inner side of the opening 11a of the first protective cover 11A.
And the particle P which fell to the inner side of the opening part 11a of 11 A of box-shaped housing | casing-like 1st deposition covers is accommodated in the accommodating part 11s provided in the bottom part 11b. Similarly, the particles P dropped from the inner side wall of the first deposition cover 11A are also accommodated in the accommodating portion 11s.

  That is, the particles P are accommodated in an accommodating portion 11s that is provided at a position farther downward from the lower ends of the targets 5a and 5b than the conventional one and has a capacity set according to the amount of particles P generated in a predetermined time. The Therefore, when the sputtered film adhered to the inner wall of the film forming chamber 2, the inner wall of the sputtering apparatus 3, or the surfaces of the first and second deposition covers 11A and 11B is peeled off and the particles P fall. Even in such a case, the particles P are accommodated in the accommodating portion 11s, and the contact between the particles P and the targets 5a and 5b can be prevented until the accommodating portion 11s is filled with the particles P.

In the liquid crystal device manufacturing apparatus 1 of the present embodiment, the dimension La of the first deposition cover 11A in the emission direction (Za direction) of the sputtered particles 5p is the minimum dimension of the second deposition cover 11B in the Za direction. It is formed so as to be larger than Lb. Therefore, when the sputtered particles 5p are attached to the first deposition cover 11A and the second deposition cover 11B to form the sputtering film, the surface of the second deposition cover 11B is covered with the sputtering film. Even in this case, a region not covered with the sputtered film can remain on the surface of the first deposition cover 11A.
That is, by making the dimension La of the first deposition cover 11A in the emission direction of the sputtered particles 5p larger than the dimension Lb of the second deposition cover 11B, the second deposition prevention is provided on the first deposition cover 11A. A region farther from the targets 5a and 5b than the landing cover 11B is formed, and the sputtered particles 5p can be made difficult to adhere to the region.

  As a result, when the first deposition cover 11A and the second deposition cover 11B are grounded and used as an anode, the function of the first deposition cover 11A as an anode due to adhesion of an insulating sputtered film. Can be prevented from being lost prior to the function as the anode of the second deposition cover 11B. Therefore, the maintenance cycle of the first deposition cover 11A can be made longer than the maintenance cycle of the second deposition cover 11B. Therefore, maintenance of the first deposition cover 11A can be performed simultaneously with the second deposition cover 11B, and maintenance of the manufacturing apparatus 1 can be facilitated.

  In addition, in the liquid crystal device manufacturing apparatus 1 of the present embodiment, a gas nozzle 19n that penetrates the first deposition cover 11A and supplies argon gas to the plasma generation region is provided. Furthermore, the tip 19a of the gas nozzle 19n is disposed on the plasma generation region side with respect to the housing portion 11s and outside the plasma generation region. Therefore, it is possible to prevent the gas flow of argon gas ejected from the tip 19a of the gas nozzle 19n from directly contacting the particles P accommodated in the accommodating portion 11s of the first deposition cover 11A. Thereby, it can prevent that the particle P is blown up by the gas flow of argon gas.

  Therefore, it is possible to prevent the particles P from adhering to the targets 5a and 5b, to prevent abnormal discharge in the sputtering apparatus 3, and to form an inorganic alignment film having good film quality. In addition, by disposing the tip 19a of the gas nozzle 19n outside the plasma generation region, it is possible to prevent the gas nozzle 19n from being adversely affected by the plasma Pz. In addition, the argon gas can be more uniformly supplied to the plasma generation region to stabilize the film formation conditions of the sputtering apparatus 3, and an inorganic alignment film with good film quality can be formed.

  In addition, since the housing portion 11s of the first deposition cover 11A is provided by extending the first deposition cover 11A obliquely downward from the horizontal direction, the particles P that have fallen on the bottom portion 11b are separated by gravity. It can be accommodated in the accommodating portion 11s by the action. Moreover, the capacity | capacitance of 11 s of accommodating parts can be increased, and more particles P can be accommodated. Further, the particles P in the accommodating portion 11s are further away from the targets 5a and 5b, and are less likely to contact the targets 5a and 5b. Therefore, the maintenance frequency of the manufacturing apparatus 1 can be reduced, and the abnormal discharge of the sputtering apparatus 3 can be prevented, so that an inorganic alignment film having good film quality can be formed.

  As described above, according to the liquid crystal device manufacturing apparatus 1 of the present embodiment, the contact between the particles P deposited under the sputtering apparatus 3 and the targets 5a and 5b can be prevented, and the sputtering apparatus 3 is abnormal. A good inorganic alignment film can be formed by preventing discharge. Further, since the particles P can be stored and stored in the storage portion 11s, the contact between the particles P and the targets 5a and 5b is continuously performed until the storage capacity of the particles P in the storage portion 11s reaches the limit. Can be prevented. Thereby, 1 maintenance frequency of a manufacturing apparatus can be reduced and productivity can be improved.

[Method of manufacturing liquid crystal device]
Next, a method for manufacturing a liquid crystal device using the manufacturing apparatus 1 (step of forming an inorganic alignment film on the substrate W) will be described.
First, as the substrate W, a substrate on which predetermined components such as switching elements and electrodes are formed is prepared as a substrate for a liquid crystal device. Next, the substrate W is accommodated in a load lock chamber provided in the film formation chamber 2, and the inside of the load lock chamber is depressurized to be in a vacuum state. Separately from this, the exhaust control device is operated to adjust the inside of the film forming chamber 2 to a desired degree of vacuum.

  Subsequently, the substrate W is transferred into the film forming chamber 2 and set on the transfer tray 6. Then, as a pretreatment for forming the alignment film, the substrate W is heated at, for example, about 250 ° C. to 300 ° C. by the heater 7 of the transport tray 6 to perform dehydration / degassing processing such as adsorbed water and gas adhering to the surface of the substrate W Do. Next, after the heating by the heater 7 is stopped, the substrate W is held at a predetermined temperature, for example, room temperature, by operating the refrigerant circulating means 18c and circulating the refrigerant to the cooling means 8c in order to suppress an increase in the substrate temperature due to sputtering. To do.

Next, argon gas is supplied from the first gas supply means 21 and ejected from the gas nozzle 19n and introduced into the sputtering apparatus 3 at a predetermined flow rate, and oxygen gas is formed from the second gas supply means 22 at a predetermined flow rate. It is introduced into the chamber 2. At the same time, the exhaust control device 20 is operated to adjust the film forming chamber 2 to a predetermined operating pressure, for example, about 10 ⁻¹ Pa. Since oxygen radicals and negative ions of oxygen are generated in oxygen gas plasma, only the argon gas is introduced into the front surfaces of the targets 5a and 5b, which are plasma generation regions, in the manufacturing apparatus 1 of this embodiment, and the oxygen gas is a separate system. From the gas supply path to the substrate W. Further, it is preferable to keep the substrate W at room temperature by operating the heater 7 and the cooling means 8c as necessary during film formation.

  Thereafter, the substrate W is moved at a predetermined speed in the X direction in FIG. 1 by the moving means 6a under such film forming conditions, and sputtering by the sputtering apparatus 3 is performed. Then, sputtered particles (silicon) serving as the alignment film material are emitted from the targets 5a and 5b. However, in the facing target type sputtering apparatus 3, the sputtered particles traveling in the target facing direction are confined in the plasma Pz. Only the sputtered particles 5p traveling toward the opening 3a in the target surface direction are emitted into the film forming chamber 2 from the opening 3a, and only the sputtered particles 5p whose traveling direction is regulated are incident on the substrate W. .

  The sputtered particles 5p selectively enter only the film-forming surface of the substrate W facing the device connection portion 25, and react with oxygen gas on the substrate W to form a silicon oxide film. Sputtered particles emitted from the sputtering apparatus 3 arranged obliquely with respect to the substrate W in this way and further passed through the apparatus connecting portion 25 arranged obliquely with respect to the substrate W in the same manner as the sputtering apparatus 3. 5p is incident on the film formation surface of the substrate W at a predetermined angle, that is, θ1. As a result, the inorganic alignment film deposited on the substrate W with the reaction between the oxygen gas and the sputtered particles 5p becomes an inorganic alignment film having a columnar structure inclined at an angle corresponding to the incident angle θ1.

  As described above, the inorganic alignment film formed in the substrate W shape by the manufacturing apparatus 1 is an inorganic alignment film having a columnar structure inclined at a desired angle, and a liquid crystal device including the alignment film has such an inorganic alignment film. As a result, the pretilt angle of the liquid crystal can be controlled well.

  In addition, contact between the particles P deposited under the sputtering apparatus 3 and the targets 5a and 5b can be prevented, and abnormal discharge can be prevented from occurring in the sputtering apparatus 3, and a good inorganic alignment film can be formed. . Further, since the particles P can be stored and stored in the storage portion 11s, the contact between the particles P and the targets 5a and 5b is continuously performed until the storage capacity of the particles P in the storage portion 11s reaches the limit. Can be prevented. Thereby, one maintenance frequency of a manufacturing apparatus can be reduced and the productivity of a liquid crystal device can be improved.

  If the inorganic alignment film is formed on the substrate W through the above steps, a liquid crystal device can be manufactured by pasting together another separately manufactured substrate through a sealing material and enclosing a liquid crystal between the substrates. In the method for manufacturing a liquid crystal device according to the present invention, a known manufacturing method can be applied to a manufacturing process other than the process of forming the inorganic alignment film.

<Second embodiment>
Next, a second embodiment of the present invention will be described with reference to FIGS. This embodiment is different from the liquid crystal device manufacturing apparatus described in the first embodiment described above in that the housing portion 12s of the first deposition cover 12 is extended in different directions. Since the other points are the same as in the first embodiment, the same parts are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 4, in the liquid crystal device manufacturing apparatus of this embodiment, the side wall member 19A provided at the end opposite to the opening 3a of the sputtering apparatus 3B extends obliquely downward (in the −Xa direction). Is formed. Further, the side wall member 19C is provided so as to extend obliquely downward so as to face the side wall member 19A. Further, the side wall member 19B is detachably attached by a fastening member such as a bolt so as to close the obliquely lower ends of the side wall members 19A and 19C. Further, the side wall members 9c and 9d (see FIG. 1) constituting the box-shaped housing of the sputtering apparatus 3B are the first electrode support member 9A, the second electrode support member 9B and the side wall members 19A, 19B and 19C shown in FIG. Is formed in a substantially L-shape when viewed in the Y direction.

Further, the first deposition cover 12 of the present embodiment is provided so as to extend downward in the emission direction (Za direction) of the sputtered particles 5p, similarly to the first deposition cover 11A of the first embodiment. ing. Furthermore, in the first deposition cover 12 of the present embodiment, the accommodating portion 12s of the bottom portion 12b is extended obliquely downward (−Xa side), and the end portion on the obliquely downward side is opened.
Therefore, the particles P that have fallen on the bottom 12b of the first deposition cover 12 are accommodated in the accommodating portion 12s that is extended obliquely downward by the action of gravity.

  Therefore, according to the manufacturing apparatus of the liquid crystal device of the present embodiment, the capacity of the storage portion 12s is further increased and more particles P are stored compared to the storage portion 11s of the manufacturing apparatus 1 of the first embodiment. It becomes possible. Moreover, compared with 1st embodiment, the particle P in the accommodating part 12s moves away from the targets 5a and 5b more, and becomes difficult to contact with the targets 5a and 5b. Thereby, the maintenance frequency of the manufacturing apparatus 1 can be reduced, the abnormal discharge of the sputtering apparatus 3B can be prevented, and an inorganic alignment film with good film quality can be manufactured. Further, since the end of the accommodating portion 12s on the oblique lower side is opened and the side wall member 19B is detachably provided, the side wall member 19B can be removed to easily remove the particles P accumulated in the accommodating portion 12s. it can. Thereby, the maintainability of the manufacturing apparatus 1 can be improved.

<Third embodiment>
Next, a third embodiment of the present invention will be described with reference to FIGS. This embodiment is different from the liquid crystal device manufacturing apparatus described in the first embodiment in that a particle trap 13t is provided in the first deposition cover 13 and a gas nozzle is not provided in the side wall member 19. Yes. Since the other points are the same as in the first embodiment, the same parts are denoted by the same reference numerals and description thereof is omitted.

As shown in FIG. 5, in the liquid crystal device manufacturing apparatus of the present embodiment, a plurality of stepped particle traps (steps) 13t are provided on the side wall of the first deposition cover 13 of the sputtering apparatus 3C. The gas supply port 19h formed in the side wall member 19 is connected to the first gas supply means 21 (see FIG. 1).
Therefore, the argon gas supplied from the first gas supply means 21 is introduced into the inside of the sputtering apparatus 3 from the gas supply port 19h and flows around the first deposition cover 13 to the plasma generation region. Supplied. Thereby, it can prevent that the particle P accommodated in the accommodating part 13s of the 1st deposition cover 13 is wound up by the gas flow of argon gas.

Even when the action of moving the particles P upward due to the flow of argon gas, mechanical vibrations, etc., the particles P are moved to the inner wall by the particle trap 13t formed in a step shape. It can be prevented from moving upward along.
Therefore, according to the manufacturing apparatus of the liquid crystal device of the present embodiment, the particles P that have been peeled off from the inside of the film forming chamber 2 and the sputtering device 3 are accommodated in the accommodating portion 13s, and then contact the targets 5a and 5b. It is prevented. Therefore, abnormal discharge of the sputtering apparatus 3 can be prevented, and an inorganic alignment film with good film quality can be formed.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described with reference to FIGS. This embodiment is different from the liquid crystal device manufacturing apparatus described in the first embodiment in that a particle trap 14t is provided on the first deposition cover 14. Since the other points are the same as in the first embodiment, the same parts are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 6, in the liquid crystal device manufacturing apparatus of the present embodiment, particle traps 14 t that are a plurality of fin-like members are provided on the side wall of the first deposition cover 14 of the sputtering apparatus 3 </ b> D. The particle trap 14t is provided obliquely with respect to the inner wall so that the tip thereof faces the bottom 14b of the first deposition cover 14.

Therefore, even when the action of moving the particle P upward due to the flow of argon gas, mechanical vibration, or the like, the particle trap 14t is formed on the inner wall by the particle trap 14t formed in a fin shape. It can be prevented from moving upward along.
Therefore, according to the manufacturing apparatus of the liquid crystal device of the present embodiment, the particles P that have been peeled off from the inside of the film forming chamber 2 and the sputtering device 3 are accommodated in the accommodating portion 14s, and then contact the targets 5a and 5b. It is prevented. Therefore, abnormal discharge of the sputtering apparatus 3 can be prevented, and an inorganic alignment film with good film quality can be formed.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the sputtering apparatus may be arranged perpendicular to the substrate transport direction. Further, the substrate transport direction and the oxygen gas introduction direction may be opposite to those in the above-described embodiment.

1 is a schematic configuration diagram of an apparatus for manufacturing a liquid crystal device according to a first embodiment. The figure which shows the detailed structure of the sputtering device shown in FIG. The schematic block diagram of the opening part vicinity of the sputtering device of the manufacturing apparatus of the liquid crystal device shown in FIG. The schematic block diagram equivalent to FIG. 3 of the manufacturing apparatus of the liquid crystal device which concerns on 2nd embodiment. The schematic block diagram equivalent to FIG. 3 of the manufacturing apparatus of the liquid crystal device which concerns on 3rd embodiment. The schematic block diagram equivalent to FIG. 3 of the manufacturing apparatus of the liquid crystal device which concerns on 4th embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Manufacturing apparatus, 2 Deposition chamber, 3, 3B, 3C, 3D Sputter apparatus, 3a opening part, 5a, 5b target, 5p sputter particle | grains, 11A 1st deposition cover, 11B 2nd deposition cover, 11s accommodation Part, 12 first protective cover, 12s storage part, 13 first protective cover, 13s storage part, 13t particle trap (step part), 14 first protective cover, 14s storage part, 14t particle trap, 19a tip, 19n gas nozzle, La and Lb dimensions, P particles, W substrate, X horizontal direction, Y horizontal direction, Z vertical direction, Za discharge direction

Claims (7)

An apparatus for manufacturing a liquid crystal device comprising a liquid crystal layer sandwiched between a pair of opposing substrates, wherein an inorganic alignment film is formed on the inner surface side of at least one of the substrates,
A film forming chamber; and a sputtering apparatus for forming an inorganic alignment film by forming an alignment film material on the substrate by sputtering in the film forming chamber;
The sputtering apparatus includes a pair of targets opposed to each other with a plasma generation region interposed therebetween, an opening provided at an upper end of the sputtering apparatus to discharge sputtered particles from the plasma generation region, and a lower end of the target A first deposition cover provided to extend downward and covering the inner wall of the sputtering apparatus,
2. A liquid crystal device manufacturing apparatus according to claim 1, further comprising: an accommodating portion that accommodates particles that have fallen off after being deposited inside the film formation chamber or the sputtering apparatus, below the first deposition cover. The sputtering apparatus has a second deposition cover in the vicinity of the opening,
2. The liquid crystal device manufacturing apparatus according to claim 1, wherein a dimension of the first deposition cover in the emission direction of the sputtered particles is larger than a dimension of the second deposition cover in the emission direction. The sputtering apparatus includes a gas nozzle that penetrates the first deposition cover and supplies a sputtering gas to the plasma generation region.
3. The apparatus for manufacturing a liquid crystal device according to claim 1, wherein a distal end portion of the gas nozzle is disposed on a side closer to the plasma generation region than the housing portion and outside the plasma generation region. .   4. The liquid crystal device according to claim 1, wherein the housing portion is provided by extending the first deposition cover in a horizontal direction or a vertically downward direction. 5. Manufacturing equipment.   The particle trap for preventing the particles collected in the accommodating portion from moving to the target side is provided on the inner side surface of the first deposition cover. 5. The apparatus for manufacturing a liquid crystal device according to claim 4.   The liquid crystal device manufacturing apparatus according to claim 5, wherein the particle trap is a plurality of step portions provided on an inner surface of the first deposition cover.   6. The apparatus for manufacturing a liquid crystal device according to claim 5, wherein the particle trap is a plurality of fin-like members erected on an inner surface of the first deposition cover.

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