JP2010015086A - Manufacturing apparatus of liquid crystal device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a liquid crystal device, by which film quality of an inorganic alignment layer is improved by preventing attachment of a sputtered particle to a region where on attachment the particle adversely affects the film quality of the inorganic alignment layer, without disposing a shutter between a film depositing chamber and a sputtering apparatus. <P>SOLUTION: The manufacturing apparatus of the liquid crystal device is equipped with: the film depositing chamber 2; the sputtering apparatus 3 for depositing an alignment layer material on a substrate W via a sputtering method so as to form the inorganic alignment layer in the film depositing chamber 2; and a conveyance tray 6 for holding and conveying the substrate W, and the manufacturing apparatus is characterized in that a capturing member 6c to capture the sputtered particle 5p ejected from the sputtering apparatus 3 is mounted on a rear face 6r of the conveyance tray 6 opposite from the face holding the substrate W. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an apparatus for manufacturing a liquid crystal device.

  2. Description of the Related Art A liquid crystal device used as a light modulation unit of a projection display device such as a liquid crystal projector has a configuration in which a sealing material is disposed at a peripheral portion between a pair of substrates and a liquid crystal layer is sealed at the center. Electrodes for applying a voltage to the liquid crystal layer are formed on the inner surfaces of the pair of substrates, and an alignment film for controlling the alignment of the liquid crystal molecules when a non-selective voltage is applied is formed on the inner surfaces of these electrodes. With such a configuration, the liquid crystal device modulates light source light based on a change in the orientation of liquid crystal molecules when a non-selection voltage is applied and when a selection voltage is applied, thereby forming a display image.

  By the way, as the alignment film described above, a film obtained by rubbing the surface of a polymer film made of polyimide or the like to which a side chain alkyl group is added is generally used. However, although such a rubbing method is simple, various disadvantages have been pointed out in order to impart alignment characteristics to the polyimide film by physically rubbing the polyimide film. Specifically, (1) it is difficult to ensure uniformity of orientation, (2) traces are likely to remain during rubbing, (3) control of orientation direction and selective pretilt angle. Control is not possible, and it is not suitable for a liquid crystal panel using a multi-domain used to obtain a wide viewing angle. (4) The breakdown of the thin film transistor element or the alignment film due to static electricity from the glass substrate. Resulting in a decrease in yield, and (5) display defects due to the generation of dust from the rubbing cloth.

  In addition, when such an alignment film made of an organic material is used in a device equipped with a high output light source such as a liquid crystal projector, the organic material is damaged by light energy, resulting in alignment failure. In particular, when the projector is downsized and the brightness is increased, the energy per unit area incident on the liquid crystal panel is increased, the polyimide itself is decomposed by the absorption of incident light, and the light is absorbed. The decomposition is further accelerated by heat generation. As a result, a great deal of damage is added to the alignment film, and the display characteristics of the device deteriorate.

Therefore, in order to eliminate such inconvenience, by performing sputtering so that the sputtered particles emitted from the target are incident on the substrate obliquely from one direction, a plurality of columnar crystals grown in an oblique direction with respect to the substrate. A method of forming an alignment film made of an inorganic material having a structure has been proposed (see, for example, Patent Document 1). According to such a method, the obtained inorganic alignment film is expected to have high reliability.
JP 2007-286401 A

  However, in the above conventional sputtering apparatus, in order to form an inorganic alignment film with better film quality, there is a case where pre-sputtering is performed to generate plasma in the sputtering apparatus in advance and stabilize the plasma before film formation on the substrate. is there. When pre-sputtering is performed, sputtered particles are released from the sputtering device, and the sputtered particles adhere to the periphery of the substrate or to the inner wall of the film formation chamber before or during film formation on the substrate. There is. Thus, when sputtered particles adhere, a sputtered film is deposited on the periphery of the substrate, the inner wall of the film forming chamber, and the like, and the film is peeled off to cause generation of particles.

  In order to solve such a problem, it is conceivable to provide a shutter for shielding the sputtered particles in the vicinity of the opening of the sputter apparatus that emits the sputtered particles. However, when such a shutter is provided, the sputtered film adhering to the shutter may be peeled off as the shutter is opened and closed, and particles may adhere to the target of the sputtering apparatus. If particles adhere to the target of the sputtering apparatus, the quality of the inorganic alignment film formed on the substrate may be adversely affected.

The shutter is provided in a narrow region between the region through which the substrate passes and the opening of the sputtering apparatus. For this reason, the shutter prevents the flow of the sputtering gas in the film forming chamber or in the sputtering apparatus, which has a problem of affecting the partial pressure of the sputtering gas around the substrate during film formation. If the partial pressure of the sputtering gas around the substrate varies, the quality of the inorganic alignment film formed on the substrate may be adversely affected.
Also, if a space for providing a shutter is secured between the substrate and the opening of the sputtering apparatus, the distance (T-S distance) between the sputtering apparatus and the film formation surface of the substrate is increased, and the inorganic alignment film is formed. There is a problem that productivity of the product is reduced.

  Therefore, the present invention prevents the sputtered particles from adhering to places that adversely affect the film quality of the inorganic alignment film without providing a shutter between the film formation chamber and the sputtering apparatus, and improves the film quality of the inorganic alignment film. An apparatus for manufacturing a liquid crystal device that can be improved is provided.

  In order to solve the above problems, a liquid crystal device manufacturing apparatus of the present invention includes a liquid crystal layer sandwiched between a pair of opposing substrates, and an inorganic alignment film is formed on the inner surface side of at least one of the substrates. An apparatus for manufacturing a liquid crystal device comprising: a deposition chamber; a sputtering apparatus for forming an inorganic alignment film by depositing an alignment film material on the substrate by a sputtering method in the deposition chamber; and holding the substrate A capture tray for capturing the sputtered particles emitted from the sputtering apparatus on the back surface opposite to the surface holding the substrate of the transport tray. And

With this configuration, even if sputtered particles emitted from the sputtering apparatus sneak to the back side of the transport tray, the sputtered particles can be captured by the capturing member. Thereby, it is possible to prevent the sputtered particles from adhering to the back surface of the transport tray to form a sputtered film, and it is possible to prevent the sputtered film on the back surface of the transported tray from being peeled off when the substrate is transported.
Therefore, according to the apparatus for manufacturing a liquid crystal device of the present invention, the film quality of the inorganic alignment film is improved by preventing the adhesion of sputtered particles to the back surface of the transport tray that adversely affects the film quality of the inorganic alignment film without providing a shutter. Can be made. Further, it becomes possible to perform pre-sputtering before starting the film formation on the substrate, and the film quality of the inorganic alignment film can be improved.
Further, compared with the case where a shutter is provided, the generation of particles can be reduced, and the partial pressure of the sputtering gas around the substrate during film formation can be made uniform, thereby improving the film quality of the inorganic alignment film. Further, as compared with the case where a shutter is provided, the distance between the sputtering apparatus and the film formation surface of the substrate can be shortened, and the productivity of the step of forming the inorganic alignment film on the substrate can be improved.

  In the liquid crystal device manufacturing apparatus of the present invention, the film formation chamber is provided with gas supply means for circulating a sputtering gas in the film formation chamber, and the capturing member is a plate surface in the flow direction of the sputtering gas. Is a plurality of fin-like members erected so as to follow.

  With this configuration, it is possible to prevent the sputtering gas from flowing in the film formation chamber from being hindered by the capturing member, and to form a favorable inorganic alignment film. Moreover, it becomes possible to increase the surface area of the capturing member and capture the sputtered particles more effectively. Therefore, generation of particles can be prevented more reliably, and the film quality of the inorganic alignment film can be further improved.

  In the liquid crystal device manufacturing apparatus according to the present invention, an interval between the capturing members is equal to or less than an average free path of the sputtered particles. In the liquid crystal device manufacturing apparatus according to the present invention, the length of the capture member in the flow direction of the sputtering gas is equal to or greater than the mean free path of the sputtered particles. In the liquid crystal device manufacturing apparatus of the present invention, the height of the capturing member is equal to or greater than the mean free path of the sputtered particles.

  By comprising in this way, the sputter particle | grains which went around to the back surface side of a conveyance tray can be more reliably made to adhere to a capture member, and can be captured more effectively. Therefore, generation of particles can be prevented more reliably, and the film quality of the inorganic alignment film can be further improved.

  In the liquid crystal device manufacturing apparatus of the present invention, the capturing member is provided at at least one of a front end and a rear end of the transport tray in the transport direction of the substrate. Features.

With this configuration, even if the sputtered particles are released by the sputtering apparatus before film formation on the film formation surface of the substrate, such as pre-sputtering, the sputtered particles that have come around to the back side of the transport tray However, it can prevent adhering to the back surface of a conveyance tray.
That is, at the time of film formation on the substrate, the substrate is moved from the rear side in the transport direction to the front side by the transport tray while the sputter particles are released from the sputtering apparatus. Then, the transport tray enters the region where the sputtered particles are released from the front end in the transport direction. At this time, if a capturing member is provided at the front end in the transport direction on the back surface of the transport tray, the sputtered particles that have come from the front end of the transport tray to the back side of the transport tray are captured. It is captured by the member and is prevented from going around to the rear side in the substrate transport direction. Therefore, when the capture member is provided at the front end of the transport tray in the substrate transport direction, a sputtered film is formed on the back surface of the transport tray on the rear side in the substrate transport direction from the capture member. It is prevented.
When the substrate is further moved forward in the transport direction by the transport tray, the end of the transport tray on the rear side in the transport direction of the substrate eventually enters the region where the sputter particles are released. At this time, if a capture member is provided at the rear end of the transport tray in the substrate transport direction, the sputtered particles that have come around from the rear end of the transport direction to the back side of the transport tray are captured by the capture member. And is prevented from turning around to the front side in the substrate transport direction. Therefore, when the capture member is provided at the rear end of the transport tray in the substrate transport direction, a sputtered film is formed on the back surface of the transport tray on the front side in the substrate transport direction with respect to the capture member. It is prevented.

  In the liquid crystal device manufacturing apparatus of the present invention, the capturing member is provided at at least one of an upstream end and a downstream end of the transport tray in the flow direction of the sputtering gas. It is characterized by.

With this configuration, even if the sputtered particles are released by the sputtering apparatus before film formation on the film formation surface of the substrate, such as pre-sputtering, the sputtered particles that have come around to the back side of the transport tray However, it can prevent adhering to the back surface of a conveyance tray.
That is, at the time of film formation on the substrate, the substrate is moved from the rear side in the transport direction to the front side by the transport tray while the sputter particles are released from the sputtering apparatus. Then, the transport tray enters the region where the sputtered particles are released from the front end in the transport direction. Further, the sputtering gas circulates in the film forming chamber along the substrate transport direction, and circulates on the film forming surface of the substrate and on the back surface of the transport tray.
At this time, if a capture member is provided at the upstream end portion of the rear surface of the transport tray in the flow direction of the sputtering gas, the upstream end portion of the transport tray in the flow direction of the sputter gas flows from the upstream side of the transport tray to the rear surface side of the transport tray. The sputtered particles that have come around are caught by the catching member, and are prevented from going around further downstream in the flow direction of the sputtering gas. Therefore, when the capturing member is provided at the upstream end of the transport direction of the sputter gas in the transport tray, the sputter film is formed on the back surface of the transport tray downstream of the sputter gas in the flow direction of the sputter gas. It is prevented from forming.
In addition, turbulent flow may occur in the sputtering gas at the downstream end of the transport tray in the flow direction of the sputtering gas. At this time, if a capture member is provided at the downstream end of the rear surface of the transport tray in the flow direction of the sputter gas, the turbulent flow of the sputter gas causes the spatter gas to flow from the downstream side in the sputter gas flow direction to the rear surface of the transport tray. The trapped sputter particles are trapped by the trapping member and are prevented from flowing further upstream in the flow direction of the sputter gas. Therefore, when a capture member is provided at the downstream end of the transport direction of the sputtering gas in the transport tray, the sputtered film is formed on the back surface of the transport tray upstream of the capture member in the flow direction of the sputter gas. It is prevented from forming.

  Further, in the liquid crystal device manufacturing apparatus of the present invention, the capturing surface of the capturing member for capturing the sputtered particles is subjected to a surface treatment for preventing the sputtered film formed by adhering the sputtered particles. It is characterized by being.

  By comprising in this way, it is prevented that a sputtered film peels from a capture member and a particle is generated. Therefore, abnormal discharge of the sputtering apparatus and adhesion of particles to the substrate can be prevented, and the film quality of the inorganic alignment film can be improved.

  In the liquid crystal device manufacturing apparatus of the present invention, a second capturing member that captures the sputtered particles is provided on an inner wall of the film forming chamber, and the second capturing member is the sputter of the sputtering apparatus. It arrange | positions so that the opening part which discharge | releases particle | grains may be opposed to the discharge | release direction of the said sputtered particle.

With this configuration, the sputtered particles released from the sputtering apparatus can be disposed in the film forming chamber even when the substrate or the transport tray is not positioned in the direction in which the sputtered particles are discharged from the opening of the sputtering apparatus. It can be captured by the second capture member.
Therefore, even when the sputtered particles are released from the sputtering apparatus before film formation on the substrate, the sputtered particles are prevented from adhering to the inner wall of the film forming chamber to be formed. As a result, the sputtered film is prevented from peeling off from the inner wall of the film forming chamber and particles are prevented from being generated. Therefore, abnormal discharge of the sputtering apparatus and adhesion of particles to the substrate can be prevented, and the film quality of the inorganic alignment film can be improved.

  In the liquid crystal device manufacturing apparatus of the present invention, the surface of the second capturing member for capturing the sputtered particles may be subjected to a surface treatment for preventing the sputtered film formed by adhering the sputtered particles. It is characterized by being given.

  By comprising in this way, it is prevented that a sputtered film peels from a 2nd capture member and a particle | grain is generated. Therefore, abnormal discharge of the sputtering apparatus and adhesion of particles to the substrate can be prevented, and the film quality of the inorganic alignment film can be improved.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the technical scope of the present invention is not limited to the following embodiments. In the drawings used for the following description, the scale of each member is appropriately changed in order to make each member a recognizable size. In the following, description will be made using an orthogonal coordinate system in which the transport direction of the substrate is the X direction, the direction parallel to the film formation surface of the substrate and perpendicular to the X direction is the Y direction, and the thickness direction of the substrate is the Z direction. Further, the emission direction of the sputtered particles is Za direction, and the direction perpendicular to the target of the sputtering apparatus is Xa direction.

(Liquid crystal device manufacturing equipment)
FIG. 1A is a schematic configuration diagram showing an embodiment of a liquid crystal device manufacturing apparatus according to an embodiment of the present invention. FIG. 1B is a side view of the sputtering apparatus 3 observed in the Xa direction.
As shown in FIG. 1A, the manufacturing apparatus 1 is an apparatus that forms an inorganic alignment film on a substrate W, which is a constituent member of a liquid crystal device, by sputtering. The manufacturing apparatus 1 includes a film forming chamber 2 that is a vacuum chamber that accommodates a substrate W, and a sputtering apparatus 3 that forms an alignment film made of an inorganic material on the surface of the substrate W by a sputtering method.

The sputtering apparatus 3 includes a first gas supply unit 21 that circulates an argon gas for discharge in the plasma generation region.
The film forming chamber 2 includes second gas supply means 22 that supplies oxygen gas as a reaction gas that reacts with the alignment film material flying on the substrate W accommodated therein to form an inorganic alignment film. .
An exhaust controller 20 for controlling the internal pressure of the film forming chamber 2 and obtaining a desired degree of vacuum is connected to the film forming chamber 2 via a pipe 20a. Further, an apparatus connection portion 25 that forms a connection portion of the sputtering apparatus 3 is formed so as to protrude outward from the lower wall surface of the film forming chamber 2 in the figure.

  The apparatus connecting portion 25 is formed to extend obliquely at a predetermined angle (θ1) with the normal direction (Z-axis direction in the drawing) of the substrate W accommodated in the film forming chamber 2. . In addition, the apparatus connecting portion 25 is configured so that the sputtering apparatus 3 connected to the tip end portion thereof can be arranged obliquely with respect to the substrate W at a predetermined angle.

  The second gas supply means 22 is connected to the side opposite to the exhaust control device 20 with respect to the device connection portion 25, and oxygen gas supplied from the second gas supply means 22 is formed as shown by an arrow 22f. The film chamber 2 flows from the + X side to the exhaust control device 20 side via the substrate W in the illustrated -X direction.

  In an actual manufacturing apparatus, a load lock chamber that enables loading / unloading of the substrate W in a state where the degree of vacuum of the film forming chamber 2 is maintained is provided outside the film forming chamber 2 in the X-axis direction. An exhaust control device that independently adjusts the load lock chamber to a vacuum atmosphere is also connected. The load lock chamber and the film formation chamber 2 are connected via a gate valve that hermetically closes the chamber. With this configuration, the substrate W can be taken in and out without releasing the film formation chamber 2 to the atmosphere.

The sputtering apparatus 3 is a counter target type sputtering apparatus in which two targets 5a and 5b are arranged to face each other.
The first target 5a is attached to the substantially flat plate-like first electrode 9a, and the second target 5b is attached to the substantially flat plate-like second electrode 9b. The targets 5a and 5b supported by the electrodes 9a and 9b are made of a material containing a constituent material of an inorganic alignment film formed on the substrate W, for example, silicon. The targets 5a and 5b are elongated plate-like members extending in the Y direction in the figure (see FIG. 2), and are installed so that their opposing surfaces are substantially parallel to each other.

  The first electrode 9a is connected to a power source 4a composed of a DC power source or a high frequency power source, and the second electrode 9b is connected to a power source 4b composed of a DC power source or a high frequency power source. The plasma Pz is generated in the space (plasma generation region) where the targets 5a and 5b are opposed by the power supplied from the power sources 4a and 4b.

A first cooling means 8a for cooling the target 5a is provided on the opposite side of the first electrode 9a from the target 5a. A first refrigerant circulating means 18a is connected to the first cooling means 8a via a pipe or the like.
A second cooling means 8b for cooling the target 5b is provided on the opposite side of the second electrode 9b from the target 5b. A second refrigerant circulation means 18b is connected to the second cooling means 8b via a pipe or the like.

  The 1st cooling means 8a is formed in the substantially same planar dimension as the target 5a, as shown in FIG.1 (b). The first cooling means 8a is disposed at a position overlapping the target 5a in plan view via the first electrode 9a shown in FIG. Although not specifically shown, the second cooling unit 8b is also disposed at a position overlapping the target 5b in plan view. The cooling means 8a and 8b are provided with a refrigerant flow path for circulating the refrigerant therein, and the targets 5a and 5b are cooled by circulating the refrigerant supplied from the refrigerant circulation means 18a and 18b through the refrigerant flow path. To do.

Further, as shown in FIG. 1B, a first magnetic field generated by a rectangular frame-shaped permanent magnet, an electromagnet, a magnet combining these, etc. so as to surround the first cooling means 8a having a rectangular shape in plan view. Means 16a are provided. The second magnetic field generating means 16b surrounding the second cooling means 8b shown in FIG. 1 (a) has the same shape.
The cooling means 8a and 8b may be made of a conductive member and electrically connected to the first electrodes 9a and 9b, respectively. In this case, the power supplies 4a and 4b are electrically connected to the cooling means 8a and 8b, respectively. Can be connected. Moreover, it is good also as a structure by which the 1st electrodes 9a and 9b serve as a cooling means by forming a refrigerant | coolant flow path inside the 1st electrodes 9a and 9b.

FIG. 2 is a diagram showing a configuration of the sputtering apparatus 3 shown in FIG. FIG. 2A is a plan view of the sputtering apparatus 3 as viewed from the film formation chamber 2 side. FIG. 2B is a cross-sectional view taken along the line GG ′ in FIG.
As shown in FIGS. 1 and 2, the first electrode 9 a and the second electrode 9 b include a side wall member 19 connected to one end portion thereof (−Za side end portion), the first electrode 9 a and the second electrode 9 b. Together with the side wall members 9c and 9d respectively connected to both ends in the Y-axis direction, a box-shaped housing serving as a vacuum chamber of the sputtering apparatus 3 is configured. However, the first electrode 9a, the second electrode 9b, and the side wall members (9c, 9d, 19) constituting the box-shaped casing are insulated from each other. The box-shaped housing has an opening 3a through which sputtered particles are discharged at the ends of the first electrode 9a and the second electrode 9b opposite to the side wall member 19. And it connects with the apparatus connection part 25 protrudingly formed in the film-forming chamber 2 through the opening part 3a, and the inside of a box-shaped housing | casing is connected with the inside of the film-forming chamber 2 by this connection structure.

As shown in FIG. 1, a first gas supply means 21 is connected to a side wall member 19 disposed on the opposite side of the film formation chamber 2 with respect to the plasma generation region sandwiched between the targets 5a and 5b. Argon gas supplied from the first gas supply means 21 flows into the plasma generation region (target facing region) from the side wall member 19 side, and then flows into the film forming chamber 2 through the apparatus connection portion 25. ing.
The argon gas that has flowed into the film forming chamber 2 joins with the oxygen gas supplied from the second gas supply means 22 and circulated along the arrow 22f as shown by an arrow 21f, and moves to the exhaust control device 20 side. It comes to flow.

In the manufacturing apparatus 1 of the present embodiment, the argon gas that is the first sputtering gas is circulated to the film forming chamber 2 side along the Za direction in the drawing, and merges with the oxygen gas that circulates in the film forming chamber 2 in the −X direction. And then circulate in the -X direction. Further, the sputtering gas is smoothly circulated such that the angle formed by the flow direction of the oxygen gas that is the second sputtering gas and the flow direction of the argon gas is an acute angle.
Thereby, it is possible to prevent the gas flow from being disturbed at the junction of the oxygen gas and the argon gas, and it is possible to prevent the incident angle of the sputtered particles 5p with respect to the substrate W from varying.

  As shown in FIG. 1A, the first magnetic field generating means 16a is disposed on the opposite side of the first electrode 9a to the target 5a, and the second magnetic field generating means is disposed on the opposite side of the second electrode 9b to the target 5b. 16b is arranged. As shown in FIG. 2B, the second magnetic field generating means 16b has a rectangular frame shape arranged along the outer peripheral edge of the rectangular target 5b, and the first magnetic field generating means 16a is the same. It is.

  Therefore, the first magnetic field generating means 16a and the second magnetic field generating means 16b are arranged to face each other at the outer peripheral portions of the targets 5a and 5b arranged to face each other. Then, the magnetic field generating means 16a, 16b generate a magnetic field in the Xa direction surrounding the targets 5a, 5b in the sputtering apparatus 3, and the electronic restraining means for restraining electrons contained in the plasma Pz within the plasma generation region by the magnetic field. Is configured.

As shown in FIG. 1A, a transport tray 6 is provided in the film forming chamber 2 for holding the substrate W so that its processing surface (film forming surface) is horizontal (parallel to the XY plane). It has been.
A capture member 6c that captures the sputtered particles 5p emitted from the sputtering apparatus 3 is detachably provided on the back surface 6r opposite to the surface that holds the substrate W of the transport tray 6. The capture member 6c is made of, for example, a metal such as aluminum, and is provided along the flow direction of oxygen gas (the direction of the arrow 22f).

  The capturing surface 6f of the capturing member 6c that captures the sputtered particles 5p is subjected to a surface treatment for preventing the sputtered film formed by the adhesion of the sputtered particles 5p from being peeled off. As such a surface treatment method, for example, a method of increasing the surface area by roughening the capture surface 6f, such as sand blasting, or a method of forming a peel prevention layer for preventing the sputtered film from peeling on the capture surface 6f is used. Can do.

The transfer tray 6 is connected to a moving means 6a for horizontally transferring the transfer tray 6 from the load lock chamber side (not shown) to the opposite side. The transport direction of the substrate W by the moving means 6a and the transport tray 6 is parallel to the X-axis direction in FIG. 1 and is orthogonal to the length direction (Y-axis direction) of the targets 5a and 5b.
The transport tray 6 is provided with a heater (heating means) 7 for heating the held substrate W. Further, the transport tray 6 is provided with a third cooling means 8c for cooling the held substrate W.

The heater 7 is connected to a control unit 7a having a power source and the like. The heater 7 is configured to heat the transport tray 6 to a desired temperature by a temperature raising operation via the control unit 7a, thereby heating the substrate W to the desired temperature.
On the other hand, the third cooling means 8c is connected to the third refrigerant circulating means 18c via a pipe or the like. Then, the third cooling unit 8c cools the transport tray 6 to a desired temperature by circulating the refrigerant supplied from the third refrigerant circulating unit 18c, and thereby cools the substrate W to the desired temperature. It is configured.

FIG. 3A is an enlarged cross-sectional view of the vicinity of the opening 3 a of the sputtering apparatus 3. FIG. 3B is a plan view of the transport tray 6 taken along the line AA ′ in FIG. In addition, although FIG. 1 demonstrated the structure by which the heater 7 and the cooling means were provided in the conveyance tray 6, these may be provided in the exterior of the conveyance tray. In FIG. 3, the case where these are provided outside the transport tray 6 and the back surface Wr opposite to the film formation surface of the substrate W is exposed will be described.
As shown in FIGS. 3A and 3B, an opening 6 w that exposes the back surface Wr of the substrate W is formed on the back surface 6 r side of the transport tray 6. A capture member 6 c is provided around the opening 6 w on the back surface 6 r of the transport tray 6.
The capture member 6c has a plurality of fin-like shapes standing on the back surface 6r of the transport tray 6 so that the capture surface (plate surface) 6f is along the transport direction (X direction) and the vertical direction (Z direction) of the substrate W. It is a member.

As shown in FIG. 3 (b), the capturing member 6c has an end on the front side (+ X side) and an end on the rear side (−X side) in the transport direction (X direction) of the substrate W of the transport tray 6. It is provided on both sides. Further, the capturing member 6c provided on the side (± Y side) of the opening 6w of the transport tray 6 is continuously formed from the end on the + X side to the end on the −X side.
In addition, the capturing member 6c has both an upstream end (+ X side) and a downstream end (−X side) of the transport tray 6 with respect to the oxygen gas flow direction (X direction) indicated by the arrow 22f. Is provided.

  The height H of the capturing member 6c shown in FIG. 3A is equal to or greater than the mean free path of the sputtered particles 5p. Similarly, the length L in the X direction of the capturing member 6c shown in FIG. 3B is equal to or greater than the mean free path of the sputtered particles 5p. On the other hand, the arrangement interval S of the capturing members 6c is equal to or less than the mean free path of the sputtered particles 5p. Here, the mean free path of the sputtered particles 5p is, for example, about 10 mm. In addition, the thickness T in the Y direction of the capturing member 6c is preferably as thin as possible while ensuring the strength, and is, for example, about 0.1 mm to about 3 mm.

  As shown in FIG. 3A, a second capturing member 2 c that captures the sputtered particles 5 p is detachably provided on the inner wall on the + Z side of the film forming chamber 2. The second capturing member 2c is formed of a metal such as aluminum, for example, similarly to the capturing member 6c on the back surface 6r of the transport tray 6. The second capturing member 2c is disposed in a region facing the emission direction of the sputtered particles 5p with respect to the opening 3a that emits the sputtered particles 5p of the sputtering device 3.

Similar to the trapping surface 6f of the trapping member 6c, the trapping surface 2f that traps the sputtered particles 5p of the second trapping member 2c is subjected to a surface treatment that prevents the sputtered film formed by adhering the sputtered particles 5p. It has been subjected.
Further, in the vicinity of the opening 3 a of the sputtering apparatus 3, the deposition cover 11 that prevents the sputter particles 5 p from adhering to the apparatus connection section 25 and the inner wall of the film forming chamber 2 and the emission direction of the sputter particles 5 p are regulated. A slit (not shown) is provided.

  In order to form the inorganic alignment film on the substrate W, which is a constituent member of the liquid crystal device, by the manufacturing apparatus 1, while introducing argon gas from the first gas supply means 21, DC is applied to the first electrode 9a and the second electrode 9b. Power (RF power) is supplied. Thereby, plasma Pz is generated in the space between the targets 5a and 5b, and argon ions or the like in the plasma atmosphere collide with the targets 5a and 5b. Then, the alignment film material (silicon) is sputtered from the targets 5a and 5b as sputtered particles 5p. Further, among the sputtered particles 5p contained in the plasma Pz, only the sputtered particles 5p flying from the plasma Pz to the opening 3a side are selectively released to the film forming chamber 2 side. Then, the sputtered particles 5p flying from the oblique direction on the surface of the substrate W and the oxygen gas flowing through the film formation chamber 2 are reacted on the substrate W, whereby an alignment film made of silicon oxide is formed on the substrate W. It comes to form.

  In this embodiment, the case where silicon oxide is formed on the substrate W by reacting silicon as the sputtered particles 5p with oxygen gas that is the second sputtering gas has been described. , 5b using, for example, silicon oxide (SiOx), aluminum oxide (AlOy, etc.), etc., and performing sputtering operation by inputting RF power to the targets 5a, 5b, these silicon oxide and aluminum oxide An inorganic alignment film made of can be formed on the substrate W. In this case, the second sputtering gas (oxygen gas) is allowed to flow in the film formation chamber 2 to prevent deviation of the formed inorganic alignment film from the oxide composition. The insulating properties of the film can be increased.

  According to the manufacturing apparatus 1 having the above configuration, since the capturing member 6c is provided on the back surface 6r of the transport tray 6, the sputtered particles 5p emitted from the sputtering device 3 sneak to the back surface 6r side of the transport tray 6. Even so, the sputtered particles 5p can be captured by the capturing member 6c. This prevents the sputtered particles 5p from adhering to the back surface 6r of the transport tray 6 or the back surface Wr of the substrate W to form a sputtered film. Therefore, it is possible to prevent the sputtered film on the back surface 6r of the transport tray 6 from being peeled off when the substrate W is transported, and to improve the film quality of the inorganic alignment film. Further, it is not necessary to remove the sputtered film formed on the back surface Wr of the substrate W.

The capturing member 6c is formed in the shape of a fin arranged so that the capturing surface 6f is along the flow direction of the oxygen gas flowing through the film forming chamber 2 as shown by the arrow 22f. Therefore, the flow of oxygen gas in the film forming chamber 2 is prevented from being hindered by the capturing member 6c, and the oxygen gas concentration and partial pressure can be made uniform. Thus, a uniform inorganic alignment film can be formed by making the concentration and partial pressure of oxygen gas uniform.
A plurality of capture members 6c are arranged in a direction (Y direction) substantially perpendicular to the flow direction of oxygen gas. Thereby, the surface area of the capture surface 6f of the capture member 6c can be increased, and the sputtered particles 5p can be captured more effectively. Therefore, generation of particles can be prevented more reliably, and the film quality of the inorganic alignment film can be further improved.

  Further, the height H of the capturing member 6c shown in FIG. 3A and the length L shown in FIG. 3B are equal to or larger than the mean free path of the sputtered particles 5p, and the arrangement interval S of the capturing members 6c is sputtered particles. It is below the mean free path of 5p. Therefore, most of the sputtered particles 5p that have come to the back surface 6r side of the transport tray 6 adhere to one of the capturing surfaces 6f when passing between the capturing surfaces 6f, 6f of the pair of capturing members 6c, 6c. To do. That is, the sputtered particles 5p can be more reliably attached to the capturing member 6c and captured more effectively. Therefore, generation of particles can be prevented more reliably, and the film quality of the inorganic alignment film can be further improved.

  In addition, since the capture members 6c are provided at the front and rear ends of the transport tray 6 in the transport direction (X direction) of the substrate W, before film formation on the film formation surface of the substrate W such as pre-sputtering. Even when the sputtered particles 5p are released by the sputtering apparatus 3, the sputtered particles 5p that wrap around the back surface 6r side of the transport tray 6 adhere to the back surface 6r of the transport tray 6 or the back surface Wr of the substrate W. Can be prevented.

  That is, when the film is formed on the substrate W, the substrate W is moved from the rear side (−X side) in the transport direction to the front side (+ X side) by the transport tray 6 with the sputter particles 5p being released from the sputtering apparatus 3. To go. Then, the transport tray 6 enters the region where the sputtered particles 5p are emitted from the end on the + X side. At this time, the sputtered particles 5p that have circulated from the + X side end of the transport tray 6 to the back surface 6r side of the transport tray 6 are captured by the capturing member 6c provided at the + X side end of the back surface 6r of the transport tray 6. Thus, it is possible to prevent sneaking to the −X side. Accordingly, it is possible to prevent a sputtered film from being formed on the back surface 6r of the transport tray 6 on the −X side and the back surface Wr of the substrate W with respect to the capturing member 6c at the end portion on the + X side of the transport tray 6.

  Further, when the substrate W is moved in the + X direction by the transport tray 6, the −X end portion of the substrate W of the transport tray 6 eventually enters the region where the sputtered particles 5p are released. At this time, the sputtered particles 5p that have come around from the −X side end of the transport tray 6 to the back surface 6r side of the transport tray 6 are captured by the capturing member 6c provided at the −X side end of the transport tray 6. Further, it is possible to prevent the substrate W from going around to the + X side. Therefore, it is possible to prevent a sputtered film from being formed on the back surface 6r of the + X side transport tray 6 and the back surface Wr of the substrate W relative to the capturing member 6c at the −X side end of the transport tray 6.

  In addition, with respect to the oxygen gas flow direction indicated by the arrow 22f, a capturing member 6c is provided at both ends of the upstream and downstream transport trays 6 of the oxygen gas. Therefore, even when the sputter particles 5p are released by the sputtering apparatus 3 before film formation on the film formation surface of the substrate W, such as pre-sputtering, the oxygen gas flows to the back surface 6r side of the transport tray 6 It is possible to prevent the sputtered particles 5p from adhering to the back surface 6r of the transport tray 6 or the back surface of the substrate W.

  That is, during film formation on the substrate W, the sputter particles 5p are released from the sputtering apparatus 3, and the substrate W is transferred from the rear side (−X side) in the transport direction (X direction) to the front side (+ X) by the transport tray 6. To the side). Then, the transport tray 6 enters the region where the sputtered particles 5p are emitted from the end on the + X side. Further, as indicated by an arrow 22 f, oxygen gas circulates in the film forming chamber 2 along the X direction, and circulates on the film forming surface of the substrate W and on the back surface 6 r of the transfer tray 6.

  At this time, since the capturing member 6c is provided at the upstream end (+ X side) in the oxygen gas flow direction on the back surface 6r of the transport tray 6, the oxygen gas is discharged from the + X side end of the transport tray 6. The sputtered particles 5p that have flown toward the back surface 6r side of the transport tray 6 due to the flow are captured by the capturing member 6c, and are prevented from flowing further downstream (−X side) in the oxygen gas flow direction. Therefore, when the capturing member 6c is provided at the + X side end of the transport tray 6, the sputtered film is formed on the back surface 6r of the transport tray 6 on the S-X side with respect to the capturing member 6c or the back surface Wr of the substrate W. Is prevented from being formed.

  In addition, turbulence may occur in the oxygen gas at the −X side end of the transport tray 6. At this time, if a capturing member is provided at the −X side end of the back surface 6r of the transport tray 6, the sputtered particles 5p sneak from the −X side to the back surface 6r side of the transport tray 6 due to the turbulent flow of oxygen gas. Is captured by the capturing member 6c and is prevented from going around to the + X side. Accordingly, it is possible to prevent a sputtered film from being formed on the back surface 6r of the transport tray 6 on the + X side and the back surface Wr of the substrate W with respect to the capturing member 6c provided at the −X side end of the transport tray 6.

  Further, the capturing surface 6f of the capturing member 6c is subjected to a surface treatment for preventing the sputtered film from peeling off. Thereby, it is prevented that the sputtered film is peeled off from the capturing member 6c to generate particles. Accordingly, the particles are prevented from dropping and adhering to the targets 5a and 5b of the sputtering apparatus 3, and abnormal discharge of the sputtering apparatus 3 can be prevented. Further, particles are prevented from adhering to the film formation surface of the substrate W, and the film quality of the inorganic alignment film can be improved.

In addition, a second capturing member 2c is provided in a region where the sputtered particles 5p on the inner wall of the film forming chamber 2 are released. Therefore, even if the substrate W and the transport tray 6 are not located in the region where the sputtered particles 5p are discharged from the sputter device 3 in the film forming chamber 2, the sputtered particles 5p discharged from the sputter device 3 are used. Can be captured by the capture surface 2f of the second capture member 2c. Therefore, even when the sputtered particles 5p are released from the sputtering apparatus 3 before the film formation on the substrate W, the sputtered particles 5p are prevented from adhering to the inner wall of the film forming chamber 2 to form a sputtered film. Is done. Thereby, it is prevented that the sputtered film peels off from the inner wall of the film forming chamber 2 to generate particles.
Therefore, abnormal discharge of the sputtering apparatus 3 and adhesion of particles to the film formation surface of the substrate W can be prevented, and the film quality of the inorganic alignment film can be improved. In addition, pre-sputtering can be performed before film formation to stabilize the plasma of the sputtering apparatus 3, and film formation conditions can be stabilized to form a better inorganic alignment film.

  Further, the capture surface 2f of the second capture member 2c is subjected to a surface treatment for preventing the sputtered film from peeling off. Thereby, it is prevented that the sputtered film is peeled off from the second capturing member 2c and particles are generated. Therefore, the particles are prevented from dropping and adhering to the targets 5a and 5b of the sputtering apparatus 3, and abnormal discharge of the sputtering apparatus 3 can be prevented. Further, particles are prevented from adhering to the film formation surface of the substrate W, and the film quality of the inorganic alignment film can be improved.

  As described above, according to the liquid crystal device manufacturing apparatus 1 of the present embodiment, the back surface 6r of the transport tray 6 and the back surface Wr of the substrate W or the film formation are adversely affected on the film quality of the inorganic alignment film without providing a shutter. The adhesion of the sputtered particles 5p to the inner wall of the chamber 2 can be prevented, and the film quality of the inorganic alignment film can be improved. Moreover, it becomes possible to perform pre-sputtering before the start of film formation on the substrate W, and the film quality of the inorganic alignment film can be improved. Further, as compared with the case where a shutter is provided, the generation of particles can be reduced, and the partial pressure of the sputtering gas around the substrate W during film formation can be made uniform to improve the film quality of the inorganic alignment film. Further, the productivity of the process of forming the inorganic alignment film on the substrate W by shortening the distance (T-S distance) between the sputtering apparatus 3 and the film formation surface of the substrate W as compared with the case where the shutter is provided. Can be improved.

  Further, since the opposed target type sputtering apparatus 3 is disposed at a predetermined angle (θ1) with respect to the substrate W, the sputtered particles 5p emitted from the openings 3a of the sputtering apparatus 3 are obliquely inclined at a predetermined angle from the substrate. The light can enter the W film-forming surface. Then, an inorganic alignment film having a columnar structure oriented in one direction can be formed on the substrate W by depositing the sputtered particles 5p incident from an oblique direction in this way. Further, in the facing target type sputtering apparatus 3, sputtered particles that are not emitted from the opening 3a are mainly incident on the targets 5a and 5b and reused, so that extremely high target utilization efficiency can be obtained. . Further, in the sputtering apparatus 3, since the directivity of the sputtered particles 5p emitted from the opening 3a can be increased by narrowing the target interval, the incident angle of the sputtered particles 5p reaching the substrate W is highly controlled. Thus, the orientation of the columnar structure in the formed inorganic alignment film is also good.

[Method of manufacturing liquid crystal device]
Next, a method for manufacturing a liquid crystal device using the manufacturing apparatus 1 (step of forming an inorganic alignment film on the substrate W) will be described.
First, as the substrate W, a substrate on which predetermined components such as switching elements and electrodes are formed is prepared as a substrate for a liquid crystal device. Next, the substrate W is accommodated in a load lock chamber provided in the film formation chamber 2, and the inside of the load lock chamber is depressurized to be in a vacuum state. Separately from this, the exhaust control device is operated to adjust the inside of the film forming chamber 2 to a desired degree of vacuum.

  Subsequently, the substrate W is transferred into the film forming chamber 2 and set on the transfer tray 6. Then, as a pretreatment for forming the alignment film, the substrate W is heated at, for example, about 250 ° C. to 300 ° C. by the heater 7 of the transport tray 6 to perform dehydration / degassing processing such as adsorbed water and gas adhering to the surface of the substrate W Do. Next, after the heating by the heater 7 is stopped, the substrate W is held at a predetermined temperature, for example, room temperature, by operating the refrigerant circulating means 18c and circulating the refrigerant to the cooling means 8c in order to suppress an increase in the substrate temperature due to sputtering. To do.

Next, argon gas is introduced from the first gas supply means 21 into the sputtering apparatus 3 at a predetermined flow rate, oxygen gas is introduced from the second gas supply means 22 into the film formation chamber 2 at a predetermined flow rate, and evacuation is performed. The control device 20 is operated and adjusted to a predetermined operating pressure, for example, about 10 ⁻¹ Pa. Since oxygen radicals and negative ions of oxygen are generated in oxygen gas plasma, only the argon gas is introduced into the front surfaces of the targets 5a and 5b, which are plasma generation regions, in the manufacturing apparatus 1 of this embodiment, and the oxygen gas is a separate system. From the gas supply path to the substrate W. Further, it is preferable to keep the substrate W at room temperature by operating the heater 7 and the cooling means 8c as necessary during film formation.

  Thereafter, the substrate W is moved at a predetermined speed in the X direction in FIG. 1 by the moving means 6a under such film forming conditions, and sputtering by the sputtering apparatus 3 is performed. At this time, pre-sputtering that stabilizes the plasma of the sputtering apparatus 3 may be performed before film formation on the substrate W. When the film formation is started, sputtered particles (silicon) serving as the alignment film material are emitted from the targets 5a and 5b. In the facing target type sputtering apparatus 3, sputtered particles traveling in the target facing direction are in the plasma Pz. Only the sputtered particles 5p that are confined in the target surface and proceed toward the opening 3a in the target surface direction are emitted from the opening 3a into the film forming chamber 2, and only the sputtered particles 5p whose traveling direction is regulated are incident on the substrate W. To come.

  The sputtered particles 5p selectively enter only the film-forming surface of the substrate W facing the device connection portion 25, and react with oxygen gas on the substrate W to form a silicon oxide film. Sputtered particles emitted from the sputtering apparatus 3 arranged obliquely with respect to the substrate W in this way and further passed through the apparatus connecting portion 25 arranged obliquely with respect to the substrate W in the same manner as the sputtering apparatus 3. 5p is incident on the film formation surface of the substrate W at a predetermined angle, that is, θ1. As a result, the inorganic alignment film deposited on the substrate W with the reaction between the oxygen gas and the sputtered particles 5p becomes an inorganic alignment film having a columnar structure inclined at an angle corresponding to the incident angle θ1.

  As described above, the inorganic alignment film formed on the substrate W by the manufacturing apparatus 1 is an inorganic alignment film having a columnar structure inclined at a desired angle, and the liquid crystal device including the alignment film has such an inorganic alignment film. As a result, the pretilt angle of the liquid crystal can be controlled well.

  Further, by providing the capture member 6c and the second capture member 2c instead of the shutter, pre-sputtering can be performed without generating particles, and film formation on the substrate W can be performed under stable film formation conditions. Thus, an inorganic alignment film having better film quality can be formed.

  If the inorganic alignment film is formed on the substrate W through the above steps, a liquid crystal device can be manufactured by pasting together another separately manufactured substrate through a sealing material and enclosing a liquid crystal between the substrates. In the method for manufacturing a liquid crystal device according to the present invention, a known manufacturing method can be applied to a manufacturing process other than the process of forming the inorganic alignment film.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the capturing member may be provided only at the front end in the transport direction of the substrate of the transport tray or only at the rear end. Further, the capturing member may be provided only at the upstream end of the transport tray in the oxygen gas flow direction or only at the downstream end.
Further, the substrate transport direction and the gas flow direction during film formation are not limited to the above-described embodiment, and may be, for example, opposite to the above-described embodiment, or both may be in the same direction.

1 is a schematic configuration diagram of an apparatus for manufacturing a liquid crystal device according to an embodiment. The figure which shows the detailed structure of the sputtering device shown in FIG. (A) is a schematic block diagram of the opening part vicinity of the sputtering device of the manufacturing apparatus of the liquid crystal device shown in FIG. 1, (b) is an arrow top view of the conveyance tray in alignment with the A-A 'line of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Manufacturing apparatus, 2 Film formation chamber, 2c 2nd capture member, 2f Capture surface, 3 Sputter apparatus, 3a Opening part, 5p Sputter particle, 6 Conveying tray, 6c Capture member, 6r Back surface, 6f Capture surface (plate surface) 22 Gas supply means, H height, L length, S interval (arrangement interval), W substrate, X transport direction (distribution direction), Za discharge direction

Claims (10)

An apparatus for manufacturing a liquid crystal device comprising a liquid crystal layer sandwiched between a pair of opposing substrates, wherein an inorganic alignment film is formed on the inner surface side of at least one of the substrates,
A film forming chamber, a sputtering apparatus for forming an inorganic alignment film by forming an alignment film material on the substrate by sputtering in the film forming chamber, and a transport tray for holding and transporting the substrate,
An apparatus for manufacturing a liquid crystal device, wherein a capture member that captures sputtered particles emitted from the sputtering apparatus is provided on a back surface of the transport tray opposite to a surface that holds the substrate. The film formation chamber is provided with a gas supply means for circulating a sputtering gas in the film formation chamber,
The liquid crystal device manufacturing apparatus according to claim 1, wherein the capturing member is a plurality of fin-like members erected so that a plate surface extends along a flow direction of the sputtering gas.   The liquid crystal device manufacturing apparatus according to claim 2, wherein an interval between the capturing members is equal to or less than an average free path of the sputtered particles.   4. The apparatus for manufacturing a liquid crystal device according to claim 2, wherein a length of the capture member in a flow direction of the sputtering gas is equal to or greater than an average free path of the sputtered particles.   The liquid crystal device manufacturing apparatus according to claim 2, wherein a height of the capturing member is equal to or greater than an average free path of the sputtered particles.   6. The capture device according to claim 2, wherein the capturing member is provided at at least one of an end portion on a front side and an end portion on a rear side in the transport direction of the substrate of the transport tray. An apparatus for manufacturing a liquid crystal device according to claim 1.   7. The capture member according to claim 2, wherein the capture member is provided at at least one of an upstream end and a downstream end of the transport tray in the flow direction of the sputtering gas. The manufacturing apparatus of the liquid crystal device as described in any one.   2. A surface treatment for preventing separation of a sputtered film formed by adhering the sputtered particles is performed on a capturing surface for capturing the sputtered particles of the capturing member. 8. The apparatus for manufacturing a liquid crystal device according to claim 7. The inner wall of the film forming chamber is provided with a second capturing member that captures the sputtered particles,
The second capturing member is disposed so as to be opposed to the sputter particle emission direction of the sputter particle emission opening of the sputter device. 9. The apparatus for manufacturing a liquid crystal device according to claim 8.   The surface of the second capturing member for capturing the sputtered particles is subjected to a surface treatment for preventing the sputtered film formed by adhering the sputtered particles. A manufacturing apparatus of the liquid crystal device according to the description.

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