JP2010016042A5 - - Google Patents
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- JP2010016042A5 JP2010016042A5 JP2008172379A JP2008172379A JP2010016042A5 JP 2010016042 A5 JP2010016042 A5 JP 2010016042A5 JP 2008172379 A JP2008172379 A JP 2008172379A JP 2008172379 A JP2008172379 A JP 2008172379A JP 2010016042 A5 JP2010016042 A5 JP 2010016042A5
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- JP
- Japan
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008172379A JP2010016042A (ja) | 2008-07-01 | 2008-07-01 | 元素分析方法および半導体装置の製造方法 |
US12/494,977 US8088632B2 (en) | 2008-07-01 | 2009-06-30 | Elemental analysis method and semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008172379A JP2010016042A (ja) | 2008-07-01 | 2008-07-01 | 元素分析方法および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010016042A JP2010016042A (ja) | 2010-01-21 |
JP2010016042A5 true JP2010016042A5 (ja) | 2011-08-04 |
Family
ID=41464694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008172379A Pending JP2010016042A (ja) | 2008-07-01 | 2008-07-01 | 元素分析方法および半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8088632B2 (ja) |
JP (1) | JP2010016042A (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569121A (zh) * | 2012-01-19 | 2012-07-11 | 叶伟清 | 一种检测晶圆内部的杂质的方法 |
US10705036B2 (en) * | 2017-01-23 | 2020-07-07 | Universitá Della Calabria | Method and system for analysis of objects |
US10245448B2 (en) * | 2017-07-21 | 2019-04-02 | Varian Medical Systems Particle Therapy Gmbh | Particle beam monitoring systems and methods |
US10843011B2 (en) | 2017-07-21 | 2020-11-24 | Varian Medical Systems, Inc. | Particle beam gun control systems and methods |
US10183179B1 (en) | 2017-07-21 | 2019-01-22 | Varian Medical Systems, Inc. | Triggered treatment systems and methods |
US10609806B2 (en) | 2017-07-21 | 2020-03-31 | Varian Medical Systems Particle Therapy Gmbh | Energy modulation of a cyclotron beam |
JP6603934B2 (ja) * | 2018-04-13 | 2019-11-13 | 東芝メモリ株式会社 | シリコン基板の分析方法 |
KR102250387B1 (ko) * | 2018-06-21 | 2021-05-10 | 주식회사 엘지화학 | 분리막 활성층의 제조 전 분리막 활성층을 구성하는 아민 화합물을 정량하는 방법, 분리막 활성층 중의 폴리아마이드 또는 미반응 아민 화합물을 정량하는 방법, 및 분리막 활성층의 제조 조건의 설정 기준 또는 제조 조건을 설정하는 방법 |
US11387073B2 (en) * | 2020-03-24 | 2022-07-12 | Applied Materials, Inc. | In situ angle measurement using channeling |
CN111445964B (zh) * | 2020-03-27 | 2023-05-12 | 合肥金星智控科技股份有限公司 | 成分分析结果的可视化方法 |
DE102022102340B4 (de) | 2022-02-01 | 2023-11-23 | Helmholtz-Zentrum Dresden - Rossendorf E. V. | Ionen-implantationsverfahren, ionenfeinstrahlanlage, bauelement und herstellungsverfahren |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61181949A (ja) * | 1985-02-07 | 1986-08-14 | Nec Corp | 不純物位置深さ方向分析装置 |
JPS6223126A (ja) * | 1985-07-23 | 1987-01-31 | Nec Corp | ド−ズ量測定方法 |
JPH04270953A (ja) * | 1991-01-09 | 1992-09-28 | Mitsubishi Electric Corp | 元素分析方法および元素分析装置ならびに薄膜形成装置 |
US5442174A (en) | 1992-10-23 | 1995-08-15 | Fujitsu Limited | Measurement of trace element concentration distribution, and evaluation of carriers, in semiconductors, and preparation of standard samples |
JP2843529B2 (ja) * | 1994-07-06 | 1999-01-06 | 理学電機工業株式会社 | 蛍光x線分析装置 |
JP3130222B2 (ja) * | 1995-02-14 | 2001-01-31 | 三菱電機株式会社 | 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法 |
JPH095263A (ja) * | 1995-06-14 | 1997-01-10 | Sumitomo Electric Ind Ltd | 微量元素の検出方法 |
US5656812A (en) | 1995-07-21 | 1997-08-12 | Jeol Ltd. | Electron probe microanalyzer and X-ray analysis using same |
JPH11248654A (ja) * | 1998-02-26 | 1999-09-17 | Nissin High Voltage Co Ltd | マイクロpixe分析方法及び装置 |
US5920068A (en) * | 1998-03-05 | 1999-07-06 | Micron Technology, Inc. | Analysis of semiconductor surfaces by secondary ion mass spectrometry |
JP2000275197A (ja) | 1999-03-25 | 2000-10-06 | Fuji Photo Optical Co Ltd | X線分析装置およびこれを使用した測定方法 |
JP2001235436A (ja) | 2000-02-23 | 2001-08-31 | Japan Science & Technology Corp | 斜出射プロトンビーム誘起特性x線分析による試料表面の観察・分析方法およびそのための装置 |
JP4346537B2 (ja) * | 2004-09-10 | 2009-10-21 | 富士通マイクロエレクトロニクス株式会社 | 表面検査装置および表面検査方法 |
JP4784420B2 (ja) * | 2005-11-30 | 2011-10-05 | 株式会社Sumco | 半導体基板の品質評価方法、半導体基板の製造方法 |
US20070274455A1 (en) * | 2006-03-03 | 2007-11-29 | The Board Of Regents Of The University Of Texas System | Methods and Systems for Analyzing Samples Using Particle Irradition |
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2008
- 2008-07-01 JP JP2008172379A patent/JP2010016042A/ja active Pending
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2009
- 2009-06-30 US US12/494,977 patent/US8088632B2/en not_active Expired - Fee Related