JP2010015855A - Substrate processing method, deposition method, and method of manufacturing organic electroluminescent device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem of substrate processing methods in the prior art having difficulty forming a plurality of films over one another in such a way as to form each film throughout the inside of an area surrounded by barrier ribs. <P>SOLUTION: A substrate processing method has, in that order, a step of preparing a substrate 41a provided with an insulating film 63 in such a way as to define a pixel formation area on a planar view; a lyophilic processing step of providing at least a portion of the insulating film 63 with a greater lyophilic property than the lyophilic property of the insulating film 63 toward a first liquefied body; a repellent processing step of providing a portion of the insulating film 63 with liquid repellency so that the portion has a greater liquid repellency toward the first liquefied body than the insulating film 63 made lyophilic toward the first liquefied body; and a heating step of heating the substrate 41a. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing method, a film forming method, and an organic EL device manufacturing method.

  Conventionally, as a treatment for a substrate having a partition wall provided so as to partition a pixel formation region, lyophilicity is imparted in a region surrounded by the partition wall in a plan view, and liquid repellency is imparted to the surface of the partition wall. Processing is known (see, for example, Patent Document 1).

Japanese Patent No. 3328297 (pages 21 to 22, FIGS. 23 and 24)

  According to the process described in Patent Document 1, when a liquid material is applied to a region surrounded by the partition walls, the liquid material is likely to spread over the region surrounded by the partition walls. On the other hand, the partition surface tends to repel the liquid. For this reason, the liquid is difficult to get over the partition. As a result, when the film is formed by applying the liquid material, the film can be easily formed over the region surrounded by the partition walls.

By the way, when a plurality of films are formed in a region surrounded by the partition walls, the first layer which is the layer closest to the substrate is surrounded by the partition walls by applying the process described in Patent Document 1. Can be formed in the region.
However, when a new liquid material is applied on the first layer within the region surrounded by the partition walls, the wettability of the new liquid material with respect to the first layer may not be sufficiently obtained. That is, a new liquid may be easily repelled on the first layer. When a film that becomes the second layer is formed from a new liquid in such a state, an opening that exposes the first layer is likely to occur in the second layer. Such a phenomenon may occur not only in the first layer but also in other layers.

  In other words, the conventional substrate processing method has a problem that it is difficult to form each film over a region surrounded by the partition walls when a plurality of films are formed to overlap each other.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  [Application Example 1] A step of preparing a substrate in which a partition wall divides a pixel formation region in a plan view, and a lyophilic property of the partition wall with respect to the first liquid material in at least a part of the partition wall A lyophilic step for imparting greater lyophilicity, and the partition so as to have a greater liquid repellency to the first liquid than the partition made lyophilic to the first liquid. A substrate processing method comprising: a lyophobic step for imparting repellency to a part of the substrate and a heating step for heating the substrate in this order.

The substrate processing method of Application Example 1 includes a substrate preparation step, a lyophilic step, a lyophobic step, and a heating step in this order. A partition wall for partitioning a pixel formation region is provided on the substrate. In the lyophilic step, lyophilicity greater than the lyophilic property of the first partition is imparted to at least a part of the partition. In the liquid repellency step, liquid repellency is imparted to a part of the partition so that the first liquid is more liquid repellent than the partition made lyophilic with respect to the first liquid. In the heating step, the substrate is heated.
According to this substrate processing method, when the first liquid material is applied to the pixel formation region surrounded by the partition walls after the heating process, the first liquid material can be easily spread in the pixel formation region. it can. Therefore, when a film is formed from the first liquid, this film can be easily formed over the pixel formation region. When a new liquid material is applied on the film, the new liquid material can be easily spread in the pixel formation region. Therefore, according to this substrate processing method, it is possible to easily improve the lyophilicity with respect to a new liquid material in the film formed after the heating step. As a result, when a plurality of films are formed in an overlapping manner, each film can be easily formed over the pixel formation region surrounded by the partition walls.

  Application Example 2 In the above substrate processing method, the partition is made of a material containing an organic material, and in the heating step, the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C. And a substrate processing method.

  In the substrate according to the substrate processing method of Application Example 2, the partition walls are made of a material containing an organic material. And in a heating process, this board | substrate is heated in 50 degreeC or more and less than 280 degreeC. If it is less than 280 degreeC, it can make it easy to avoid damaging the partition comprised with the material containing an organic material. Moreover, if it is 50 degreeC or more, it can make it easy to improve the lyophilicity with respect to a liquid body in the film | membrane formed after the heating process.

  Application Example 3 In the substrate processing method described above, in the liquid repellency step, the substrate is subjected to plasma processing in an environment containing a gas containing at least one of fluorine and a fluorine compound. A substrate processing method.

  In Application Example 3, since the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound in the liquid repellency step, liquid repellency can be imparted to the partition walls.

  Application Example 4 In the substrate processing method described above, in the lyophilic step, the substrate is subjected to plasma processing in an environment containing a gas containing oxygen.

  In Application Example 4, in the lyophilic step, the substrate is subjected to plasma treatment in an environment containing a gas containing oxygen, so that lyophilicity can be imparted to the substrate.

  Application Example 5 A step of preparing a substrate in which a partition wall is provided so as to partition a pixel formation region in a plan view, and a lyophilic property of the partition wall with respect to the first liquid material in at least a part of the partition wall A lyophilic step for imparting greater lyophilicity, and the partition so as to have a greater liquid repellency to the first liquid than the partition made lyophilic to the first liquid. A liquid repellent process for imparting liquid repellency to a part of the substrate, a heating process for heating the substrate, and the first liquid material is disposed in the pixel formation region surrounded by the partition wall after the heating process. A step of forming a first film with a substance contained in the first liquid material by drying at least a part of the liquid contained in the first liquid material, and the step surrounded by the partition wall A second liquid material on the first film in the pixel formation region And a step of forming a second film with a substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material in this order. A characteristic film forming method.

The film forming method of application example 5 includes a step of preparing a substrate, a lyophilic step, a lyophobic step, a heating step, a step of arranging a first liquid, a step of forming a first film, The step of arranging the two liquid materials and the step of forming the second film are included in this order. A partition wall for partitioning a pixel formation region is provided on the substrate. In the lyophilic step, lyophilicity greater than the lyophilic property of the first partition is imparted to at least a part of the partition. In the liquid repellency step, liquid repellency is imparted to a part of the partition so that the first liquid is more liquid repellent than the partition made lyophilic with respect to the first liquid. In the heating step, the substrate is heated. In the step of disposing the first liquid material, the first liquid material is disposed in the pixel formation region surrounded by the partition walls after the heating step. In the step of forming the first film, at least a part of the liquid contained in the first liquid is dried to form the first film with the substance contained in the first liquid. In the step of arranging the second liquid material, the second liquid material is arranged on the first film in the pixel formation region surrounded by the partition walls. In the step of forming the second film, at least a part of the liquid contained in the second liquid material is dried to form the second film with the substance contained in the second liquid material.
According to this film forming method, when the first liquid material is applied in the pixel formation region, the first liquid material can be easily spread in the pixel formation region. Therefore, when the first film is formed from the first liquid, the first film can be easily formed over the pixel formation region. In addition, when the second liquid material is disposed on the first film, the second liquid material can be easily spread on the first film. Therefore, according to this film forming method, the lyophilicity with respect to the second liquid can be easily improved in the first film formed after the heating step. As a result, when a plurality of films including the first film and the second film are formed in an overlapping manner, each film can be easily formed over the region surrounded by the partition walls.

  Application Example 6 In the film forming method described above, the first liquid material and the second liquid material have different compositions.

  In Application Example 6, since the first liquid body and the second liquid body have different compositions, the first film and the second film having different properties can be formed.

  Application Example 7 In the film forming method described above, the partition is made of a material containing an organic material, and in the heating step, the substrate is heated in a range of 50 ° C. or more and less than 280 ° C. A film forming method characterized by the above.

  In the substrate according to the film forming method of Application Example 7, the partition walls are made of a material containing an organic material. And in a heating process, this board | substrate is heated in 50 degreeC or more and less than 280 degreeC. If it is less than 280 degreeC, it can make it easy to avoid damaging the partition comprised with the material containing an organic material. Moreover, if it is 50 degreeC or more, it can make it easy to improve the lyophilicity with respect to a liquid body in the film | membrane formed after the heating process.

  Application Example 8 In the film forming method described above, in the liquid repellency step, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound. A film forming method.

  In Application Example 8, since the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound in the liquid repellency step, liquid repellency can be imparted to the partition walls.

  Application Example 9 In the film forming method described above, in the lyophilic step, the substrate is subjected to plasma treatment in an environment containing a gas containing oxygen.

  In Application Example 9, in the lyophilic step, the substrate is subjected to plasma treatment in an environment containing a gas containing oxygen, so that the lyophilic property can be imparted to the substrate.

  Application Example 10 For each of the plurality of pixels, the pixel includes a pair of electrodes facing each other, an organic layer interposed between the pair of electrodes, and a partition wall surrounding the organic layer in plan view, An organic EL device manufacturing method in which an organic layer has a plurality of layers including at least a first layer and a second layer, the step of preparing a substrate having the partition, and at least a part of the partition A lyophilic step for imparting greater lyophilicity to the first liquid than the lyophilic property of the partition, and the first liquid rather than the partition made lyophilic to the first liquid. So as to have a large liquid repellency with respect to the body, a liquid repellency process for imparting liquid repellency to a part of the partition wall, a heating process for heating the substrate, and the partition wall surrounded by the partition wall after the heating process. Disposing the first liquid material in the pixel forming region, The step of forming the first layer with a substance contained in the first liquid by drying at least a part of the liquid contained in the first liquid, and the pixel formation region surrounded by the partition wall And disposing at least a part of the liquid contained in the second liquid material by disposing the second liquid material on the first layer in the second layer, so that the second liquid material is contained in the second liquid material. And a step of forming layers in this order.

The organic EL device according to the manufacturing method of Application Example 10 includes, for each pixel of a plurality of pixels, a pair of electrodes facing each other, an organic layer interposed between the pair of electrodes, a partition wall surrounding the organic layer in plan view, have. In this organic EL device, the organic layer has a plurality of layers including at least a first layer and a second layer.
The manufacturing method of this application example includes a step of preparing a substrate, a lyophilic step, a lyophobic step, a heating step, a step of disposing a first liquid, a step of forming a first layer, and a second step. A step of disposing a liquid material; and a step of forming a second layer.
A partition wall for partitioning a pixel formation region is provided on the substrate. In the lyophilic step, lyophilicity greater than the lyophilic property of the first partition is imparted to at least a part of the partition. In the liquid repellency step, liquid repellency is imparted to a part of the partition so that the first liquid has greater liquid repellency than the partition made lyophilic with respect to the first liquid. In the heating step, the substrate having a partition having liquid repellency is heated. In the step of disposing the first liquid material, the first liquid material is disposed in the pixel formation region surrounded by the partition walls after the heating step. In the step of forming the first layer, the first layer is formed of the substance contained in the first liquid by drying at least a part of the liquid contained in the first liquid. In the step of arranging the second liquid material, the second liquid material is arranged on the first layer in the pixel formation region surrounded by the partition walls. In the step of forming the second layer, the second layer is formed of the substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material.
According to this method for manufacturing an organic EL device, when the first liquid material is applied in the pixel formation region, the first liquid material can be easily spread in the pixel formation region. Therefore, when the first layer is formed from the first liquid, the first layer can be easily formed over the pixel formation region. When the second liquid material is disposed on the first layer, the second liquid material can be easily spread and wetted on the first layer. Therefore, according to this manufacturing method, the lyophilicity with respect to the second liquid can be easily improved in the first layer formed after the heating step. As a result, when a plurality of layers including the first layer and the second layer are formed in an overlapping manner, each layer can be easily formed over the pixel formation region surrounded by the partition walls.
As a result, it is possible to easily reduce the occurrence of defective pixels and the like in a plurality of pixels. For this reason, the display quality of the organic EL device can be easily improved.

  [Application Example 11] In the method of manufacturing the organic EL device described above, the partition is made of a material containing an organic material, and in the heating step, the substrate is placed in a range of 50 ° C or higher and lower than 280 ° C. A method for manufacturing an organic EL device, comprising heating.

  In the substrate according to the manufacturing method of Application Example 11, the partition wall is made of a material containing an organic material. And in a heating process, this board | substrate is heated in 50 degreeC or more and less than 280 degreeC. If it is less than 280 degreeC, it can make it easy to avoid damaging the partition comprised with the material containing an organic material. Moreover, if it is 50 degreeC or more, it can make it easy to improve the lyophilicity with respect to a liquid body in the film | membrane formed after the heating process.

  Application Example 12 In the above-described organic EL device manufacturing method, in the liquid repellency process, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound. A method of manufacturing an organic EL device characterized by the above.

  In Application Example 12, in the liquid repellency step, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound, so that the partition walls can be provided with liquid repellency.

  Application Example 13 In the method of manufacturing an organic EL device described above, in the lyophilic step, the substrate is subjected to plasma treatment in an environment containing a gas containing oxygen. Production method.

  In Application Example 13, in the lyophilic step, the substrate is subjected to plasma treatment in an environment containing a gas containing oxygen, so that the lyophilic property can be imparted to the substrate.

  Application Example 14 A method for manufacturing an organic EL device according to the above-described method, wherein the second layer is a light emitting layer.

  Application Example 15 A method for manufacturing an organic EL device according to the above-described method, wherein the second layer is a hole transport layer.

Embodiments will be described with reference to the drawings, taking a display device using an organic EL device as an example.
The display device 1 according to the embodiment has a display surface 3 as shown in FIG.

  Here, a plurality of pixels 5 are set in the display device 1. The plurality of pixels 5 are arranged in the X direction and the Y direction in the drawing within the display area 7, and constitute a matrix M in which the X direction is the row direction and the Y direction is the column direction. The display device 1 can display an image on the display surface 3 by selectively emitting light from the plurality of pixels 5 to the outside of the display device 1 via the display surface 3. The display area 7 is an area where an image can be displayed. In FIG. 1, the pixels 5 are exaggerated and the number of the pixels 5 is reduced for easy understanding of the configuration.

The display device 1 includes an element substrate 11 and a sealing substrate 13 as shown in FIG. 2 which is a cross-sectional view taken along the line AA in FIG.
The element substrate 11 is provided with an organic EL element, which will be described later, corresponding to each of the plurality of pixels 5 on the display surface 3 side, that is, the sealing substrate 13 side. The surface 15 of the element substrate 11 opposite to the display surface 3 side is set as the bottom surface of the display device 1. Hereinafter, the surface 15 is referred to as a bottom surface 15.

The sealing substrate 13 is provided in a state facing the element substrate 11 on the display surface 3 side with respect to the element substrate 11. The element substrate 11 and the sealing substrate 13 are bonded via an adhesive 16. In the display device 1, the organic EL element is covered with the adhesive 16 from the display surface 3 side.
Further, the element substrate 11 and the sealing substrate 13 are sealed with a sealing material 17 that surrounds the display region 7 inside the periphery of the display device 1. That is, in the display device 1, the organic EL element and the adhesive 16 are sealed with the element substrate 11, the sealing substrate 13, and the sealing material 17.

Here, each of the plurality of pixels 5 in the display device 1 has a red color (R), a green color (G), and a blue color (B) as shown in FIG. Is set to one of these. That is, the plurality of pixels 5 constituting the matrix M include a pixel 5r that emits R light, a pixel 5g that emits G light, and a pixel 5b that emits B light.
In the following description, the expression “pixel 5” and the expressions “pixels 5r, 5g, and 5b” are appropriately used.

  Here, the color of R is not limited to a pure red hue, and includes orange and the like. The color of G is not limited to a pure green hue, and includes bluish green and yellowish green. The color of B is not limited to a pure blue hue, and includes bluish purple and blue-green. From another viewpoint, light exhibiting the color of R can be defined as light having a light wavelength peak in a range of 570 nm or more in the visible light region. The light exhibiting the color G can be defined as light having a light wavelength peak in the range of 500 nm to 565 nm. Light exhibiting the color B can be defined as light having a light wavelength peak in the range of 415 nm to 495 nm.

In the matrix M, a plurality of pixels 5 arranged along the Y direction form one pixel column 18. A plurality of pixels 5 arranged along the X direction form one pixel row 19.
Each pixel 5 in one pixel column 18 has a light color set to one of R, G, and B. That is, the matrix M includes a pixel column 18r in which a plurality of pixels 5r are arranged in the Y direction, a pixel column 18g in which the plurality of pixels 5g are arranged in the Y direction, and a pixel column 18b in which the plurality of pixels 5b are arranged in the Y direction. have. In the display device 1, the pixel column 18r, the pixel column 18g, and the pixel column 18b are repeatedly arranged in this order along the X direction.
In the following, the notation of the pixel column 18 and the notation of the pixel column 18r, the pixel column 18g, and the pixel column 18b are appropriately used.

The display device 1 includes a selection transistor 21, a drive transistor 23, a capacitor element 25, and an organic EL element 27 for each pixel 5, as shown in FIG. The organic EL element 27 includes a pixel electrode 29, an organic layer 31, and a common electrode 33. Each of the selection transistor 21 and the driving transistor 23 is configured by a TFT (Thin Film Transistor) element and has a function as a switching element.
In addition, the display device 1 includes a scanning line driving circuit 34, a data line driving circuit 35, a plurality of scanning lines GT, a plurality of data lines SI, and a plurality of power supply lines PW.

The plurality of scanning lines GT are respectively connected to the scanning line driving circuit 34, and extend in the X direction with a space therebetween in the Y direction.
The plurality of data lines SI are respectively connected to the data line driving circuit 35 and extend in the Y direction with a space therebetween in the X direction.
The plurality of power supply lines PW extend in the X direction in a state in which the power supply lines PW are spaced from each other in the Y direction, and the power supply lines PW and the scanning lines GT are spaced in the Y direction.

Each pixel 5 is set corresponding to the intersection of each scanning line GT and each data line SI. Each scanning line GT and each power supply line PW correspond to each pixel row 19 shown in FIG. Each data line SI corresponds to each pixel column 18 shown in FIG.
The gate electrode of each selection transistor 21 shown in FIG. 4 is electrically connected to each corresponding scanning line GT. The source electrode of each select transistor 21 is electrically connected to each corresponding data line SI. The drain electrode of each select transistor 21 is electrically connected to the gate electrode of each drive transistor 23 and one electrode of each capacitive element 25.

The other electrode of the capacitive element 25 and the source electrode of the driving transistor 23 are electrically connected to the corresponding power supply line PW.
The drain electrode of each drive transistor 23 is electrically connected to each pixel electrode 29. Each pixel electrode 29 and the common electrode 33 constitute a pair of electrodes having the pixel electrode 29 as an anode and the common electrode 33 as a cathode.
Here, the common electrode 33 is provided in a series of states between the plurality of pixels 5 constituting the matrix M, and functions in common between the plurality of pixels 5.
The organic layer 31 interposed between each pixel electrode 29 and the common electrode 33 is made of an organic material and has a configuration including a light emitting layer to be described later.

  The selection transistor 21 is turned on when a selection signal is supplied to the scanning line GT connected to the selection transistor 21. At this time, a data signal is supplied from the data line SI connected to the selection transistor 21, and the drive transistor 23 is turned on. The gate potential of the driving transistor 23 is held for a certain period by holding the potential of the data signal in the capacitor 25 for a certain period. As a result, the ON state of the drive transistor 23 is held for a certain period. Each data signal is generated at a potential corresponding to the gradation display.

When the ON state of the driving transistor 23 is maintained, a current corresponding to the gate potential of the driving transistor 23 flows from the power supply line PW to the common electrode 33 through the pixel electrode 29 and the organic layer 31. Then, the light emitting layer included in the organic layer 31 emits light with a luminance corresponding to the amount of current flowing through the organic layer 31. Thereby, the display device 1 can perform gradation display.
The display device 1 is one of top emission type organic EL devices in which a light emitting layer included in the organic layer 31 emits light, and light from the light emitting layer is emitted from the display surface 3 through the sealing substrate 13. In the display device 1, the expression “display surface 3 side” is also expressed as the upper side, and the expression “bottom surface 15 side” is also expressed as the lower side.

Here, the details of the configurations of the element substrate 11 and the sealing substrate 13 will be described.
The element substrate 11 has a first substrate 41 as shown in FIG. 5 which is a cross-sectional view taken along the line CC in FIG. In FIG. 5, the selection transistor 21, the capacitor 25, the data line SI, and the power supply line PW are omitted for easy understanding of the configuration.
The first substrate 41 is made of a light-transmitting material such as glass or quartz, for example, and includes a first surface 42a facing the display surface 3 side and a second surface 42b facing the bottom surface 15 side. have.

A gate insulating film 43 is provided on the first surface 42 a of the first substrate 41. An insulating film 45 is provided on the display surface 3 side of the gate insulating film 43. An insulating film 47 is provided on the display surface 3 side of the insulating film 45.
A semiconductor layer 51 is provided on the first surface 42 a of the first substrate 41 corresponding to the drive transistor 23 of each pixel 5. The semiconductor layer 51 is covered with the gate insulating film 43 from the display surface 3 side. As a material of the gate insulating film 43, for example, a material such as silicon oxide can be adopted.

  On the display surface 3 side of the gate insulating film 43, a gate electrode 53 is provided in a region overlapping the semiconductor layer 51 in plan view. As a material of the gate electrode 53, for example, a metal such as aluminum, copper, molybdenum, tungsten, or chromium, or an alloy containing these metals can be used. The gate electrode 53 is covered with the insulating film 45 from the display surface 3 side.

  On the display surface 3 side of the insulating film 45, a source electrode 55 is provided in a region overlapping a source region (not shown) of the semiconductor layer 51 in plan view. The source electrode 55 is connected to a source region (not shown) of the semiconductor layer 51 through a contact hole 57 provided in the insulating film 45 and the gate insulating film 43. As a material of the source electrode 55, for example, a metal such as aluminum, copper, molybdenum, tungsten, or chromium, or an alloy containing these metals can be employed. The source electrode 55 is covered with the insulating film 47 from the display surface 3 side.

  A pixel electrode 29 is provided on the display surface 3 side of the insulating film 47. The pixel electrode 29 is connected to a drain region (not shown) of the semiconductor layer 51 through a contact hole 59 provided in the insulating film 47, the insulating film 45, and the gate insulating film 43. As a material of the pixel electrode 29, for example, a light-reflective metal such as silver, platinum, aluminum, or copper, or an alloy containing these metals can be employed.

When the pixel electrode 29 functions as an anode, it is preferable to use a material having a relatively high work function such as silver or platinum as the material of the pixel electrode 29. Further, ITO (Indium Tin Oxide), indium zinc oxide (Indium Zinc Oxide) or the like is used as the material of the pixel electrode 29, and a light reflective member is provided between the pixel electrode 29 and the first substrate 41. Can also be employed. In this embodiment, ITO is used as the material of the pixel electrode 29.
Further, as the material of the insulating films 45 and 47, for example, materials such as silicon oxide, silicon nitride, and acrylic resin can be adopted.

  Between the adjacent pixel electrodes 29, an insulating film (first partition) 61 that partitions each pixel 5 is provided over the region 62. The insulating film 61 is made of a light transmissive material such as silicon oxide, silicon nitride, or acrylic resin. The insulating film 61 is provided in a lattice shape over the display region 7 in plan view. For this reason, the display region 7 is partitioned into regions of the plurality of pixels 5 by the insulating film 61. When attention is paid to one pixel 5, the insulating film 61 is provided in an annular shape in plan view. Each pixel electrode 29 overlaps the area of each pixel 5 surrounded by the insulating film 61 in plan view. In the present embodiment, silicon oxide is used as the material of the insulating film 61.

On the display surface 3 side of the insulating film 61, an insulating film (second partition) 63 surrounding the area of each pixel 5 is provided. The insulating film 63 is made of, for example, an organic material such as an acrylic resin or a polyimide resin containing a material having a high light absorption property such as carbon black or chromium, and has a lattice shape along the insulating film 61 in a plan view. Is provided. Focusing on one pixel 5, the insulating film 63 surrounds the area of each pixel 5 in plan view. For this reason, the insulating film 63 can be considered to be provided in a ring shape for each pixel 5. In the present embodiment, an acrylic resin is employed as the material of the insulating film 63.
On the display surface 3 side of the pixel electrode 29, an organic layer 31 is provided in a region surrounded by the insulating film 63 (hereinafter referred to as a pixel formation region).

The organic layer 31 is provided corresponding to each pixel 5 and includes a hole injection layer 65, a hole transport layer 67, and a light emitting layer 69.
The hole injection layer 65 is made of an organic material, and is provided on the display surface 3 side of the pixel electrode 29 in the pixel formation region surrounded by the insulating film 63 in plan view.
As the organic material for the hole injection layer 65, a mixture of a polythiophene derivative such as 3,4-polyethylenedioxythiophene (PEDOT) and polystyrene sulfonic acid (PSS) or the like may be employed. As the organic material for the hole injection layer 65, polystyrene, polypyrrole, polyaniline, polyacetylene, derivatives thereof, and the like may be employed.

The hole transport layer 67 is made of an organic material, and is provided on the display surface 3 side of the hole injection layer 65 in the pixel formation region surrounded by the insulating film 63 in plan view.
As the organic material of the hole transport layer 67, for example, a configuration including a triphenylamine-based polymer such as TFB shown as the following compound 1 can be adopted.

The light emitting layer 69 is made of an organic material, and is provided on the display surface 3 side of the hole transport layer 67 in the pixel formation region surrounded by the insulating film 63 in plan view.
As the organic material of the light emitting layer 69 corresponding to the R pixel 5r, for example, a mixture of F8 (polydioctylfluorene) shown as the following compound 2 and a perylene dye may be employed.

  As the organic material of the light emitting layer 69 corresponding to the G pixel 5g, for example, a mixture of F8BT shown as the following compound 3, TFB shown as the compound 1, and F8 shown as the compound 2 is adopted. Can be done.

  As an organic material of the light emitting layer 69 corresponding to the B pixel 5b, for example, F8 shown as the compound 2 can be adopted.

On the display surface 3 side of the organic layer 31, as shown in FIG. 5, an electron injection layer 71 is provided in the pixel formation region surrounded by the insulating film 63. As a material of the electron injection layer 71, for example, an alloy containing magnesium and silver, calcium, or the like can be adopted. In this embodiment, an alloy containing magnesium and silver is employed as the material of the electron injection layer 71.
A common electrode 33 is provided on the display surface 3 side of the electron injection layer 71. As the common electrode 33, for example, a thin film made of a metal such as aluminum can be used. The common electrode 33 can also be configured by, for example, a thin film made of an alloy containing magnesium and silver to provide light transmission. In the present embodiment, an aluminum thin film is employed as the common electrode 33. The common electrode 33 covers the electron injection layer 71 and the insulating film 63 across the plurality of pixels 5 from the display surface 3 side.

  In the display device 1, the region that emits light in each pixel 5 can be defined as a region where the pixel electrode 29, the organic layer 31, and the common electrode 33 overlap in a plan view. In addition, a group of elements constituting a region that emits light for each pixel 5 may be defined as one organic EL element 27. In the display device 1, one organic EL element 27 includes one pixel electrode 29, one organic layer 31, one electron injection layer 71, and a common electrode 33 corresponding to one pixel 5. have.

The sealing substrate 13 is made of a light-transmitting material such as glass or quartz, for example, and has an outward surface 13a facing the display surface 3 side and an opposing surface 13b facing the bottom surface 15 side. is doing.
In the element substrate 11 and the sealing substrate 13 having the above-described configuration, the common electrode 33 of the element substrate 11 and the facing surface 13 b of the sealing substrate 13 are bonded via an adhesive 16.

  In the display device 1, the sealing material 17 illustrated in FIG. 2 is sandwiched between the first surface 42 a of the first substrate 41 and the facing surface 13 b of the sealing substrate 13 illustrated in FIG. 5. That is, in the display device 1, the organic EL element 27 and the adhesive 16 are sealed with the first substrate 41, the sealing substrate 13, and the sealing material 17. The sealing material 17 may be provided between the facing surface 13 b and the common electrode 33. In this case, the organic EL element 27 and the adhesive 16 can be regarded as being sealed by the element substrate 11, the sealing substrate 13, and the sealing material 17.

Here, a method for manufacturing the display device 1 will be described.
The manufacturing method of the display device 1 is roughly divided into a step of manufacturing the element substrate 11 and a step of assembling the display device 1.
In the process of manufacturing the element substrate 11, first, the drive element layer 81 is formed on the first surface 42 a of the first substrate 41 as shown in FIG. The drive element layer 81 includes the selection transistor 21 (FIG. 4), the drive transistor 23, the capacitor element 25 (FIG. 4), the power supply line PW (FIG. 4), the pixel electrode 29, the gate insulating film 43, and the insulating film 45. Insulating film 47 is included.

  Next, as illustrated in FIG. 6B, the insulating film 61 is formed in a region overlapping the periphery of the pixel electrode 29 and the insulating film 47 (region 62 illustrated in FIG. 5) in plan view. In forming the insulating film 61, first, a silicon oxide film that covers the pixel electrode 29 and the insulating film 47 in a plan view is formed by utilizing a CVD technique or the like. Next, the silicon oxide film is patterned by utilizing, for example, a photolithography technique and an etching technique. Thereby, the insulating film 61 can be formed.

Next, as shown in FIG. 6C, an insulating film 63 is formed in a region overlapping the insulating film 61 in plan view. In forming the insulating film 63, first, a resin film that covers the pixel electrode 29 and the insulating film 61 in a plan view is formed with an acrylic resin containing a negative photosensitive material. In the formation of the resin film, spin coating technology, printing technology, or the like can be used. Next, the resin film is patterned by using, for example, a photolithography technique. Thereby, the insulating film 63 can be formed.
The first substrate 41 on which the configuration from the drive element layer 81 to the insulating film 63 is formed is hereinafter referred to as a substrate 41a.

Next, as shown in FIG. 7A, the substrate 41a is subjected to oxygen plasma treatment. Thereby, lyophilicity is imparted to the liquid materials 65a, 67a, and 69a, which will be described later, to the pixel electrode 29 and the insulating film 61 than before the oxygen plasma treatment. In the present embodiment, a method is employed in which plasma is generated in the processing chamber while introducing a processing gas into the processing chamber while the processing chamber is kept at a predetermined degree of vacuum. In the present embodiment, a gas containing oxygen is employed as the processing gas.
Here, an example of a plasma processing apparatus applied to the oxygen plasma processing in the present embodiment will be described. The plasma processing apparatus 83 includes a chamber (processing chamber) 85, a table 87, a coil 89, and a shower plate 91, as shown in FIG.

Connected to the chamber 85 are an introduction pipe 93 that guides the processing gas from the outside into the chamber 85 and an exhaust pipe 95 that discharges the gas from the chamber 85 to the outside. A dielectric plate 97 made of a dielectric is provided on the top plate portion of the chamber 85.
The table 87 is disposed in the chamber 85. The coil 89 is provided outside the chamber 85 so as to face the dielectric plate 97. The shower plate 91 is provided in a state facing the dielectric plate 97 in the chamber 85. A gap is provided between the dielectric plate 97 and the shower plate 91.
A high frequency bias power source 101 is connected to the table 87 via a matching unit 99. A high frequency power source 105 is connected to one end of the coil 89 via a matching unit 103. The other end of the coil 89 is grounded.

The introduction pipe 93 extends from the outside of the chamber 85 into the gap between the dielectric plate 97 and the shower plate 91. A valve 107 is connected to the introduction pipe 93 outside the chamber 85. The processing gas is introduced into the gap between the dielectric plate 97 and the shower plate 91 through the introduction pipe 93 after passing through the valve 107. The processing gas introduced into the gap between the dielectric plate 97 and the shower plate 91 is introduced into the chamber 85 through the shower plate 91.
A vacuum pump 109 is connected to the exhaust pipe 95 outside the chamber 85. The pressure in the chamber 85 is reduced by discharging the gas in the chamber 85 to the outside of the chamber 85 through the exhaust pipe 95 by the vacuum pump 109.

In the step of performing oxygen plasma treatment on the substrate 41 a, first, the substrate 41 a is placed on the table 87.
Next, the vacuum pump 109 is driven to keep the pressure in the chamber 85 in a reduced pressure state.
Next, the valve 107 is opened to introduce oxygen into the chamber 85.
Next, the high frequency power source 105 and the high frequency bias power source 101 are driven to apply a high frequency voltage to the coil 89 and a bias voltage to the table 87.
Thereby, oxygen plasma is induced in the chamber 85.

In the present embodiment, the oxygen plasma treatment conditions are as follows: the pressure in the chamber 85 is about 133 Pa (1 Torr), the amount of oxygen introduced is about 500 SCCM, the plasma irradiation intensity is 1 W / cm ² , and the treatment time is 1 minute. did.

Following the step of performing oxygen plasma treatment on the substrate 41a, as shown in FIG. 7B, the substrate 41a is subjected to UV ozone treatment. Thereby, the lyophilicity of the pixel electrode 29 and the insulating film 61 is enhanced. In the present embodiment, a method of generating ultraviolet rays in the processing chamber while introducing a gas containing oxygen into the processing chamber while the substrate 41a is accommodated in the processing chamber is employed.
Here, an example of a UV ozone treatment apparatus applied to the UV ozone treatment in the present embodiment will be described. As shown in FIG. 9 which is a sectional view showing a schematic configuration, the UV ozone treatment apparatus 111 includes a chamber (treatment chamber) 113, a table 115, a low-pressure mercury lamp 117, an introduction pipe 119, an exhaust pipe 121, ,have.

  Connected to the chamber 113 are an introduction pipe 119 that guides the processing gas from the outside into the chamber 113 and an exhaust pipe 121 that discharges the decomposition gas from the chamber 113 to the outside. The table 115 is disposed in the chamber 113. The low-pressure mercury lamp 117 is provided facing the table 115 in the chamber 113. In this embodiment, the low-pressure mercury lamp 117 emits ultraviolet light having a wavelength of about 254 nm and ultraviolet light having a wavelength of about 185 nm. The energy ratio between the ultraviolet light having a wavelength of about 254 nm and the ultraviolet light having a wavelength of about 185 nm is set to about 4: 1.

In the step of performing the UV ozone treatment on the substrate 41a, the processing gas is introduced into the chamber 113 while the low-pressure mercury lamp 117 is turned on with the substrate 41a placed on the table 115. In the present embodiment, the processing gas contains oxygen. Oxygen is decomposed by ultraviolet rays having a wavelength of about 185 nm and converted into ozone. Thereby, the UV ozone treatment is performed on the substrate 41a.
Note that ozone in the chamber 113 is decomposed by ultraviolet rays having a wavelength of about 254 nm, and changes to oxygen. The cracked gas changed from ozone to oxygen is discharged to the outside of the chamber 113 through the exhaust pipe 121.

Following the step of performing UV ozone treatment on the substrate 41a, as shown in FIG. 7C, CF ₄ plasma treatment is performed on the substrate 41a. Thereby, than before the CF ₄ plasma treatment, the insulating film 63, described later liquid material 65a, 67a, liquid repellency is imparted to 69a. In the present embodiment, a method is employed in which plasma is generated in the processing chamber while introducing a processing gas into the processing chamber while the processing chamber is kept at a predetermined degree of vacuum. In the present embodiment, CF ₄ gas that is a gas containing a fluorine compound is employed as the processing gas.

The above-described plasma processing apparatus 83 (FIG. 8) can be applied to the CF ₄ plasma processing. In the present embodiment, the CF ₄ plasma processing conditions are such that the pressure in the chamber 85 is about 133 Pa (1 Torr), the amount of CF ₄ gas introduced is about 900 SCCM, the plasma irradiation intensity is 1 W / cm ² , and the processing time is set. 30 minutes.
The processing gas is not limited to CF ₄ gas, and halogen gas such as SF ₆ or CHF ₃ , fluorine gas, or the like may be employed.

Subsequent to the step of subjecting the substrate 41a to CF ₄ plasma treatment, the substrate 41a is subjected to heat treatment. In the present embodiment, as a heat treatment method, a method is employed in which the substrate 41a is held for a predetermined holding time in an environment maintained in a predetermined temperature range. As the conditions for the heat treatment, in the present embodiment, a temperature range of 50 ° C. or higher and lower than 280 ° C. and a holding time of about 10 minutes may be employed. If it is less than 50 degreeC, the time required for the effect mentioned later to be acquired will become long. For this reason, it is unpreferable from a viewpoint of efficiency to fall below 50 degreeC. Further, at 280 ° C. or higher, the insulating film 63 made of an organic material may be softened or the weight may be reduced. For this reason, 280 degreeC or more is not preferable.

Following the step of performing the heat treatment on the substrate 41a, as shown in FIG. 10A, the liquid material 65a is disposed in the region (pixel formation region) of each pixel 5 surrounded by the insulating film 63. The liquid material 65 a contains an organic material that forms the hole injection layer 65. For the arrangement of the liquid material 65a, an ink jet method using a droplet discharge head 131 can be used.
The technique for ejecting the liquid material 65a and the like as the droplet 65b from the droplet ejection head 131 is called an inkjet technique. And the method of arrange | positioning the liquid body 65a etc. in a predetermined position using an inkjet technique is called the inkjet method. This ink jet method is one of coating methods.

  A hole injection layer 65 shown in FIG. 10B can be formed by drying the liquid material 65a arranged in the region of each pixel 5 by a reduced pressure drying method and then performing firing. In addition, the liquid material 65a may employ a configuration in which a mixture of PEDOT and PSS is dissolved in a solvent. As the solvent, for example, diethylene glycol, isopropyl alcohol, normal butanol and the like can be employed. The reduced pressure drying method is a drying method performed under a reduced pressure environment, and is also called a vacuum drying method. The firing conditions for the liquid 65a are an environmental temperature of about 200 ° C. and a holding time of about 10 minutes.

Next, as illustrated in FIG. 10B, the liquid material 67 a is discharged as droplets 67 b from the droplet discharge head 131 into the pixel formation region surrounded by the insulating film 63, thereby being surrounded by the insulating film 63. A liquid 67a is disposed in the pixel formation region. The liquid material 67 a contains an organic material that constitutes the hole transport layer 67.
At this time, the hole injection layer 65 is covered with the liquid 67a. In addition, the liquid material 67a may employ a configuration in which TFB is dissolved in a solvent. As the solvent, for example, cyclohexylbenzene can be employed.

  Next, after the liquid 67a is dried by a reduced pressure drying method, the hole transport layer 67 shown in FIG. 10C can be formed by firing in an inert gas. The firing conditions for the liquid 67a are an environmental temperature of about 130 ° C. and a holding time of about 1 hour.

  Next, as illustrated in FIG. 10C, the liquid material 69 a is disposed in each region surrounded by the insulating film 63. The liquid material 69 a contains an organic material that constitutes the light emitting layer 69. The liquid material 69a is disposed by discharging the liquid material 69a from the droplet discharge head 131 as droplets 69b. At this time, the hole transport layer 67 is covered with the liquid 69a. In addition, the liquid material 69a may employ a configuration in which the organic material described above corresponding to each of the pixels 5r, 5g, and 5b is dissolved in a solvent. As the solvent, for example, cyclohexylbenzene can be employed.

  Next, after the liquid 69a is dried by a reduced pressure drying method, the light emitting layer 69 shown in FIG. 5 can be formed by firing in an inert gas. The firing conditions of the liquid 69a are an environmental temperature of about 130 ° C. and a holding time of about 1 hour.

Next, an electron injection layer 71 shown in FIG. 5 can be formed by using a vapor deposition technique or the like to form a film of calcium or the like in the pixel formation region surrounded by the insulating film 63. At this time, the electron injection layer 71 can be formed in a state where the insulating film 63 is covered from the display surface 3 side with a mask.
Next, the common electrode 33 shown in FIG. 5 can be formed by forming a film of aluminum or the like by utilizing a vapor deposition technique using a mask. Thereby, the element substrate 11 can be manufactured.

In the process of assembling the display device 1, as shown in FIG. 2, the element substrate 11 and the sealing substrate 13 are joined via an adhesive 16 and a sealing material 17.
At this time, the element substrate 11 and the sealing substrate 13 are joined in a state where the first surface 42a of the first substrate 41 and the facing surface 13b of the sealing substrate 13 face each other, as shown in FIG. Thereby, the display apparatus 1 can be manufactured.

In the present embodiment, the insulating film 63 corresponds to the partition, the substrate 41a corresponds to the substrate, the liquid material 65a corresponds to the first liquid material, the liquid material 67a corresponds to the second liquid material, and the hole injection layer. 65 corresponds to the first film as the first layer, and the hole transport layer 67 corresponds to the second film as the second layer. Further, the pixel electrode 29 and the common electrode 33 in each pixel 5 correspond to a pair of electrodes.
Further, the step of performing the heat treatment on the substrate 41a corresponds to the heating step. Each of the step of performing oxygen plasma treatment on the substrate 41a and the step of performing UV ozone treatment on the substrate 41a corresponds to the lyophilic step. Further, the process of performing the CF ₄ plasma treatment on the substrate 41a corresponds to the liquid repellency process.

In the present embodiment, lyophilicity is imparted to the pixel electrode 29 and the insulating film 61 by oxygen plasma treatment. In addition, liquid repellency is imparted to the insulating film 63 by the CF ₄ plasma treatment. For this reason, when the liquid material 65a is disposed in the region surrounded by the insulating film 63 on the substrate 41a, the liquid material 65a is likely to wet and spread on the pixel electrode 29 and the insulating film 61, and the liquid material 65a is formed into the insulating film 63. Easy to be repelled. For this reason, it is difficult for the liquid material 65 a to get over the insulating film 63. As a result, the hole injection layer 65 can be easily formed over the pixel electrode 29 and the insulating film 61 in the region surrounded by the insulating film 61. That is, in each pixel 5, it is possible to easily suppress the occurrence of a defect that a part of the hole injection layer 65 is lost, for example.

In this embodiment, the substrate 41a is subjected to heat treatment after the oxygen plasma treatment and the CF ₄ plasma treatment. As a result, the liquid 67a easily spreads over the hole injection layer 65 in the region surrounded by the insulating film 63. For this reason, the hole transport layer 67 can be easily formed over the hole injection layer 65 in the region surrounded by the insulating film 63.
The same effect can be obtained in the light emitting layer 69. The liquid 69a is easily spread over the hole transport layer 67 in the region surrounded by the insulating film 63.

  As described above, in this embodiment, each of the hole injection layer 65, the hole transport layer 67, and the light emitting layer 69 can be easily formed over a region surrounded by the insulating film 63. As a result, in the plurality of pixels 5, for example, it is possible to suppress the occurrence of defective pixels in which a part of each layer is missing in the pixel 5. For this reason, the display quality in the display of the display device 1 can be easily improved.

Here, examples and comparative examples will be described.
In Examples and Comparative Examples described below, samples formed by arranging an ITO film and an acrylic resin film on a glass substrate were used as samples. Three samples prepared under the same conditions were prepared. The three samples are identified as Sample 1, Sample 2 and Sample 3.
Samples 1 to 3 were subjected to oxygen plasma treatment, UV ozone treatment, and CF ₄ plasma treatment. The order and conditions of these processes were made the same as the order and conditions described above.

Example 1
Sample 1 was subjected to heat treatment under the conditions of a temperature of 200 ° C. and a holding time of 10 minutes.
Next, a liquid material 65a was applied on each of the ITO film and the acrylic resin film, and the contact angle was measured. For the measurement of the contact angle, a fine contact angle meter FTA4000 (manufactured by First Ten Angstroms) was used.
The contact angle in the ITO film was 9 degrees. The contact angle in the acrylic resin film was 90 degrees.

Next, the liquid body 65a was dried by a reduced pressure drying method and then fired. Thus, a first film equivalent to the hole injection layer 65 was formed on the ITO film. Drying conditions and firing conditions were the same as those described above.
Next, the liquid 67a was applied on each of the first film and the acrylic resin film, and the contact angle was measured.
The contact angle in the first film was 9 degrees. The contact angle in the acrylic resin film was 90 degrees.

Next, the liquid 67a was dried by a reduced pressure drying method and then fired. As a result, a second film equivalent to the hole transport layer 67 was formed on the first film. Drying conditions and firing conditions were the same as those described above.
Next, a liquid material 69a was applied on each of the second film and the acrylic resin film, and the contact angle was measured.
The contact angle in the second film was 9 degrees. The contact angle in the acrylic resin film was 90 degrees.

(Example 2)
Sample 2 was subjected to heat treatment under the conditions of a temperature of 100 ° C. and a holding time of 10 minutes.
Next, a liquid material 65a was applied on each of the ITO film and the acrylic resin film, and the contact angle was measured.
The contact angle in the ITO film was 9 degrees. The contact angle in the acrylic resin film was 90 degrees.

Next, the liquid body 65a was dried by a reduced pressure drying method and then fired. Thus, a first film equivalent to the hole injection layer 65 was formed on the ITO film. Drying conditions and firing conditions were the same as those described above.
Next, the liquid 67a was applied on each of the first film and the acrylic resin film, and the contact angle was measured.
The contact angle in the first film was 15 degrees. The contact angle in the acrylic resin film was 90 degrees.

Next, the liquid 67a was dried by a reduced pressure drying method and then fired. As a result, a second film equivalent to the hole transport layer 67 was formed on the first film. Drying conditions and firing conditions were the same as those described above.
Next, a liquid material 69a was applied on each of the second film and the acrylic resin film, and the contact angle was measured.
The contact angle in the second film was 15 degrees. The contact angle in the acrylic resin film was 90 degrees.

(Comparative example)
Without subjecting the sample 3 to heat treatment, the liquid material 65a was applied on each of the ITO film and the acrylic resin film, and the contact angle was measured.
The contact angle in the ITO film was 9 degrees. The contact angle in the acrylic resin film was 90 degrees.

Next, the liquid body 65a was dried by a reduced pressure drying method and then fired. Thus, a first film equivalent to the hole injection layer 65 was formed on the ITO film. Drying conditions and firing conditions were the same as those described above.
Next, the liquid 67a was applied on each of the first film and the acrylic resin film, and the contact angle was measured.
The contact angle in the first film was 50 degrees. The contact angle in the acrylic resin film was 90 degrees.

Next, the liquid 67a was dried by a reduced pressure drying method and then fired. Drying conditions and firing conditions were the same as those described above.
However, a second film equivalent to the hole transport layer 67 could not be formed on the first film. Since the contact angle of the liquid 67a on the first film was 50 degrees, no film was formed even when the liquid 67a was dried and fired. For this reason, about the sample 3, subsequent evaluation was not able to be continued.

  The results of Example 1, Example 2, and Comparative Example are shown in Table 1 below.

なお、表１では、アクリル樹脂の膜が「樹脂の膜」と表記されている。

In Table 1, an acrylic resin film is described as a “resin film”.

From the results of Example 1, Example 2, and Comparative Example, it is understood that it is preferable to heat-treat the substrate 41a after the oxygen plasma treatment and the CF ₄ plasma treatment. Further, from this result, it is understood that a higher temperature is preferable for the same holding time. From the opposite viewpoint, it is understood that when the temperature is lowered, the holding time required to obtain the same wettability is increased.

  The display state of the display device 1 created under each condition in Example 1, Example 2, and Comparative Example was observed. As a result, in the display device 1 corresponding to each of Example 1 and Example 2, it was confirmed that the luminance unevenness was reduced as compared with the display device corresponding to the comparative example.

  In the present embodiment, the display device 1 in which a plurality of pixels 5 are set and the organic EL element 27 is provided for each pixel 5 has been described as an example, but the embodiment is not limited thereto. As an embodiment, there is also a form such as a lighting device in which the organic EL elements 27 are arranged in a series over the display region 7. Such an illuminating device is suitable for a light source such as a liquid crystal display device.

  In the present embodiment, a configuration in which the hole transport layer 67 is the second layer is employed, but the configuration is not limited to this. If a layer capable of generating holes and sending holes to the light emitting layer 69 is provided as the first layer, a configuration in which the light emitting layer 69 is the second layer may be employed.

In this embodiment, the top emission type organic EL device that emits light from the organic layer 31 from the display surface 3 through the sealing substrate 13 is described as an example. However, the organic EL device is not limited to this. As the organic EL device, a bottom emission type in which light from the organic layer 31 is emitted from the bottom surface 15 through the element substrate 11 may be employed.
In the case of the bottom emission type, since the light from the organic layer 31 is emitted from the bottom surface 15, the display surface 3 is set on the bottom surface 15 side. That is, in the bottom emission type, the bottom surface 15 of the display device 1 and the display surface 3 are interchanged. In the bottom emission type, the bottom surface 15 side corresponds to the upper side, and the display surface 3 side corresponds to the lower side.

In the case of the bottom emission type, ITO, indium zinc oxide, or the like can be adopted as the material of the pixel electrode 29. In addition, calcium or the like can be adopted as a material for the electron injection layer 71. Aluminum or the like can be used as the material of the common electrode 33.
In Samples 1 to 3, when the ITO film was replaced with a platinum film, the same results as those of the above-described Example 1, Example 2, and Comparative Example were obtained.

  The display device 1 described above can be applied to, for example, the display unit 510 of the electronic device 500 illustrated in FIG. The electronic device 500 is a mobile phone. This electronic device 500 has an operation button 511. The display unit 510 can display various information including information input by the operation buttons 511 and incoming call information. In this electronic apparatus 500, since the display device 1 is applied to the display unit 510, luminance unevenness in each pixel 5 can be suppressed low.

  The electronic device 500 is not limited to a mobile phone, and includes various electronic devices such as mobile computers, digital still cameras, digital video cameras, in-vehicle devices such as display devices for car navigation systems, and audio devices.

The top view which shows the display apparatus in this embodiment. Sectional drawing in the AA in FIG. FIG. 3 is a plan view showing a part of a plurality of pixels in the embodiment. 1 is a diagram showing a circuit configuration of a display device in an embodiment. Sectional drawing in the CC line | wire in FIG. The figure explaining the manufacturing process of the element substrate in this embodiment. The figure explaining the manufacturing process of the element substrate in this embodiment. Sectional drawing which shows the structure of an outline of an example of the plasma processing apparatus applied to the oxygen plasma processing in this embodiment. Sectional drawing which shows the schematic structure of an example of the UV ozone treatment apparatus applied to the UV ozone treatment in this embodiment. The figure explaining the manufacturing process of the element substrate in this embodiment. The perspective view of the electronic device to which the display apparatus in this embodiment is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 3 ... Display surface, 5 ... Pixel, 7 ... Display area, 11 ... Element substrate, 15 ... Bottom surface, 27 ... Organic EL element, 29 ... Pixel electrode, 31 ... Organic layer, 33 ... Common electrode, 41 1st substrate, 41a ... substrate, 61 ... insulating film, 62 ... region, 63 ... insulating film, 65 ... hole injection layer, 65a ... liquid, 65b ... droplet, 67 ... hole transport layer, 67a ... liquid Body, 67b ... droplet, 69 ... light emitting layer, 69a ... liquid, 69b ... droplet, 71 ... electron injection layer, 81 ... drive element layer, 83 ... plasma treatment apparatus, 111 ... UV ozone treatment apparatus, 131 ... liquid Drop ejection head, 500... Electronic device, 510.

Claims (15)

A step of preparing a substrate in which a partition wall is provided so as to partition a pixel formation region in plan view;
A lyophilic step of imparting at least a part of the partition with a lyophilic property greater than the lyophilic property of the partition with respect to the first liquid;
A liquid repellency step for imparting liquid repellency to a part of the partition so as to have a greater liquid repellency with respect to the first liquid than the partition made lyophilic with respect to the first liquid. ,
A heating step of heating the substrate;
In this order. The partition is made of a material containing an organic material,
2. The substrate processing method according to claim 1, wherein in the heating step, the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C. 3.   3. The substrate processing method according to claim 1, wherein in the liquid repellency step, the substrate is subjected to a plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound.   4. The substrate processing method according to claim 1, wherein in the lyophilic step, plasma processing is performed on the substrate in an environment containing a gas containing oxygen. 5. A step of preparing a substrate in which a partition wall is provided so as to partition a pixel formation region in plan view;
A lyophilic step of imparting at least a part of the partition with a lyophilic property greater than the lyophilic property of the partition with respect to the first liquid;
A liquid repellency step for imparting liquid repellency to a part of the partition so as to have a larger liquid repellency to the first liquid than the partition made lyophilic to the first liquid. ,
A heating step of heating the substrate;
After the heating step, disposing the first liquid material in the pixel formation region surrounded by the partition;
Forming a first film with a substance contained in the first liquid by drying at least a part of the liquid contained in the first liquid;
Disposing a second liquid material on the first film in the pixel formation region surrounded by the partition;
Forming a second film with a substance contained in the second liquid by drying at least a part of the liquid contained in the second liquid;
In this order.   The film forming method according to claim 5, wherein the first liquid body and the second liquid body have different compositions. The partition is made of a material containing an organic material,
The film forming method according to claim 5, wherein, in the heating step, the substrate is heated in a range of 50 ° C. or more and less than 280 ° C. 7.   8. The plasma treatment is performed on the substrate in an environment containing a gas containing at least one of fluorine and a fluorine compound in the liquid repellency step. Film forming method.   9. The film forming method according to claim 5, wherein in the lyophilic step, plasma treatment is performed on the substrate in an environment containing a gas containing oxygen. Each of the plurality of pixels includes a pair of electrodes facing each other, an organic layer interposed between the pair of electrodes, and a partition wall surrounding the organic layer in plan view, and the organic layer is at least a first layer A method for manufacturing an organic EL device having a plurality of layers including a first layer and a second layer,
Preparing a substrate having the partition;
A lyophilic step of imparting at least a part of the partition with a lyophilic property greater than the lyophilic property of the partition with respect to the first liquid;
A liquid repellency step for imparting liquid repellency to a part of the partition so as to have a larger liquid repellency to the first liquid than the partition made lyophilic to the first liquid. ,
A heating step of heating the substrate;
After the heating step, disposing the first liquid material in the pixel formation region surrounded by the partition;
Forming the first layer with a substance contained in the first liquid by drying at least a portion of the liquid contained in the first liquid;
Disposing a second liquid material on the first layer in the pixel formation region surrounded by the partition;
Forming the second layer with a substance contained in the second liquid material by drying at least part of the liquid contained in the second liquid material;
In this order. A method of manufacturing an organic EL device. The partition is made of a material containing an organic material,
The method for manufacturing an organic EL device according to claim 10, wherein in the heating step, the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C.   12. The manufacturing of an organic EL device according to claim 10, wherein in the lyophobic process, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound. Method.   13. The method of manufacturing an organic EL device according to claim 10, wherein in the lyophilic step, the substrate is subjected to plasma treatment in an environment containing a gas containing oxygen.   The method for manufacturing an organic EL device according to claim 10, wherein the second layer is a light emitting layer.   The method for manufacturing an organic EL device according to claim 10, wherein the second layer is a hole transport layer.

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