JP2010004038A - ニュートロン検出構造 - Google Patents
ニュートロン検出構造 Download PDFInfo
- Publication number
- JP2010004038A JP2010004038A JP2009138161A JP2009138161A JP2010004038A JP 2010004038 A JP2010004038 A JP 2010004038A JP 2009138161 A JP2009138161 A JP 2009138161A JP 2009138161 A JP2009138161 A JP 2009138161A JP 2010004038 A JP2010004038 A JP 2010004038A
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- layer
- device layer
- conversion
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- neutron detection
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- 238000001514 detection method Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 77
- 230000005855 radiation Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 27
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- ZOXJGFHDIHLPTG-BJUDXGSMSA-N Boron-10 Chemical compound [10B] ZOXJGFHDIHLPTG-BJUDXGSMSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Abstract
【解決手段】シリコン-オン-絶縁体メモリセルから作られた中性子検出構造体は、入射中性子を放射帯電粒子に変換するための変換層と、放射帯電粒子を受けるデバイス層と、該デバイス層および変換層に直接隣接して、該デバイス層から変換層を隔てる埋設された酸化物層と、絶縁層と、埋設された酸化物層およびデバイス層に対向して絶縁層上に形成されたパッシベーション層と、デバイス層に電気的な接触を提供する複数の伝導コンタクトとを有する。
【選択図】図1
Description
Claims (3)
- 入射ニュートロンを放射帯電粒子に変換するための変換層と、
前記放射帯電粒子を受けるデバイス層と、
前記変換層と前記デバイス層とに直接隣接し、前記デバイス層から前記変換層を隔てる埋設された酸化物層と、
絶縁層であって、少なくともその一部が前記埋設された酸化物層から前記デバイス層に対向していることを特徴とする絶縁層と、
前記埋設された酸化物層および前記デバイス層に対向した絶縁層の上に形成されたパッシベーション層と、
前記絶縁層に対向した前記パッシベーション層に対して接着層によって接着されたキャリアと、
前記デバイス層に電気的接触を提供するための複数の伝導コンタクトと、
を有することを特徴とするニュートロン検出構造体。 - 前記変換層がボロンを有することを特徴とする請求項1に記載の構造体。
- 前記デバイス層が、静的ランダムアクセスメモリ(SRAM)デバイスを含むことを特徴とする請求項1に記載の構造体。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/135,787 US7791031B2 (en) | 2008-06-09 | 2008-06-09 | Neutron detection structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010004038A true JP2010004038A (ja) | 2010-01-07 |
Family
ID=41110545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009138161A Pending JP2010004038A (ja) | 2008-06-09 | 2009-06-09 | ニュートロン検出構造 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7791031B2 (ja) |
EP (1) | EP2133929A3 (ja) |
JP (1) | JP2010004038A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013537622A (ja) * | 2010-07-13 | 2013-10-03 | ハネウェル・インターナショナル・インコーポレーテッド | ウェハ間(wafer−to−wafer)ボンディングを有する中性子探知器 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7838324B2 (en) * | 2008-12-19 | 2010-11-23 | Honeywell International Inc. | Neutron detection structure and method of fabricating |
US8153985B2 (en) * | 2009-01-30 | 2012-04-10 | Honeywell International Inc. | Neutron detector cell efficiency |
US8383457B2 (en) | 2010-09-03 | 2013-02-26 | Stats Chippac, Ltd. | Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect |
USRE48111E1 (en) | 2009-08-21 | 2020-07-21 | JCET Semiconductor (Shaoxing) Co. Ltd. | Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect |
US8169058B2 (en) | 2009-08-21 | 2012-05-01 | Stats Chippac, Ltd. | Semiconductor device and method of stacking die on leadframe electrically connected by conductive pillars |
US20110186940A1 (en) * | 2010-02-03 | 2011-08-04 | Honeywell International Inc. | Neutron sensor with thin interconnect stack |
US8890083B2 (en) | 2012-05-23 | 2014-11-18 | International Business Machines Corporation | Soft error detection |
CN104111471B (zh) * | 2013-04-18 | 2017-03-08 | 中国科学院高能物理研究所 | 中子探测器与中子探测方法 |
CN110018514B (zh) * | 2019-04-16 | 2020-10-20 | 东莞中子科学中心 | 一种基于sram的中子能谱探测器及测量中子能谱的反演算法 |
Citations (8)
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JPS6135384A (ja) * | 1984-07-28 | 1986-02-19 | Fuji Electric Corp Res & Dev Ltd | 中性子検出装置 |
JPH05182909A (ja) * | 1991-06-13 | 1993-07-23 | Seiko Instr Inc | 半導体集積回路装置 |
JPH05281364A (ja) * | 1992-04-06 | 1993-10-29 | Aloka Co Ltd | 中性子線量当量測定装置 |
JP2001511605A (ja) * | 1997-07-28 | 2001-08-14 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 自己制限動作モードで真性アバランシェ増倍をする半導体放射線検出器 |
JP2002501679A (ja) * | 1998-03-19 | 2002-01-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 放射感知半導体装置及びそれを製造する方法 |
JP2006525677A (ja) * | 2003-04-21 | 2006-11-09 | シオプティカル インコーポレーテッド | シリコン・ベースの光デバイスの電子デバイスとのcmos互換集積化 |
JP2007509345A (ja) * | 2003-10-20 | 2007-04-12 | アメリカ合衆国 | 中性子検出デバイス及びその製造方法 |
JP2007516432A (ja) * | 2003-10-20 | 2007-06-21 | アメリカ合衆国 | 中性子変換層組み込み型半導体基板 |
Family Cites Families (20)
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US5319210A (en) * | 1992-11-10 | 1994-06-07 | Georgetown University | Neutron dosimetry using three-dimensional optical memory |
KR0152901B1 (ko) * | 1993-06-23 | 1998-10-01 | 문정환 | 플라스틱 반도체 패키지 및 그 제조방법 |
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-
2008
- 2008-06-09 US US12/135,787 patent/US7791031B2/en active Active
-
2009
- 2009-06-04 EP EP09161983A patent/EP2133929A3/en not_active Ceased
- 2009-06-09 JP JP2009138161A patent/JP2010004038A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135384A (ja) * | 1984-07-28 | 1986-02-19 | Fuji Electric Corp Res & Dev Ltd | 中性子検出装置 |
JPH05182909A (ja) * | 1991-06-13 | 1993-07-23 | Seiko Instr Inc | 半導体集積回路装置 |
JPH05281364A (ja) * | 1992-04-06 | 1993-10-29 | Aloka Co Ltd | 中性子線量当量測定装置 |
JP2001511605A (ja) * | 1997-07-28 | 2001-08-14 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 自己制限動作モードで真性アバランシェ増倍をする半導体放射線検出器 |
JP2002501679A (ja) * | 1998-03-19 | 2002-01-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 放射感知半導体装置及びそれを製造する方法 |
JP2006525677A (ja) * | 2003-04-21 | 2006-11-09 | シオプティカル インコーポレーテッド | シリコン・ベースの光デバイスの電子デバイスとのcmos互換集積化 |
JP2007509345A (ja) * | 2003-10-20 | 2007-04-12 | アメリカ合衆国 | 中性子検出デバイス及びその製造方法 |
JP2007516432A (ja) * | 2003-10-20 | 2007-06-21 | アメリカ合衆国 | 中性子変換層組み込み型半導体基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013537622A (ja) * | 2010-07-13 | 2013-10-03 | ハネウェル・インターナショナル・インコーポレーテッド | ウェハ間(wafer−to−wafer)ボンディングを有する中性子探知器 |
Also Published As
Publication number | Publication date |
---|---|
EP2133929A3 (en) | 2013-01-16 |
US7791031B2 (en) | 2010-09-07 |
US20090302227A1 (en) | 2009-12-10 |
EP2133929A2 (en) | 2009-12-16 |
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