JP2010001553A - Cvd system and method for producing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CVD system which can prevent the phenomenon that a film peeled from the outer circumferential part of a wafer sticks to a color ring as foreign matters, and to provide a method for producing a semiconductor device. <P>SOLUTION: Regarding the high density plasma CVD system, film deposition and etching are simultaneously or repeatedly performed, so as to form a film having high implantation properties on a wafer, and which comprises: an electrostatic chuck 2 holding a wafer 21 and having a size smaller than that of the wafer 21; and a collar ring 1b installed so as to surround the side wall of the electrostatic chuck 2. The collar ring 1b comprises a confronted part 40a confronted with the side wall of the electrostatic chuck 2 and located at the lower part of the outer circumferential part of the wafer, the confronted part 40a is formed so as to surround the side wall of the electrostatic chuck, and, to the electrostatic chuck 2 in the confronted part 40a, the outside is located at the inside than the outermost part of the outer circumferential part in the wafer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a CVD apparatus and a method for manufacturing a semiconductor device, and more particularly to a CVD apparatus and a method for manufacturing a semiconductor device that can prevent a film peeled off from the outer periphery of a wafer from adhering to a coloring as a foreign matter.

Semiconductor integrated circuits have been miniaturized and highly integrated, and pattern miniaturization and film thinning have been accelerated. Therefore, a high-density plasma CVD apparatus (HDP.CVD apparatus) that can form a highly embeddable SiO ₂ film in a step shape portion of a fine pattern is used.

The HDP.CVD apparatus has a high-frequency plasma source and a gas introduction nozzle at the top of the chamber. SiH ₄ , O _2, Ar, and the like are used as the gases to be introduced, and these gases are used to generate plasma dielectrically coupled under low pressure conditions using an RF (radio frequency) coil and supplied onto the wafer. The wafer is held by an electrostatic chuck (ESC) installed at the lower part of the chamber, and the back surface of the wafer is chucked by static electricity during film formation. On the ESC surface, there is a He gas supply port, and an HDP film is formed while cooling the wafer by flowing He gas on the back surface.

10A to 10D are cross-sectional views for explaining the film forming process of the SiO ₂ film by the HDP.CVD apparatus. As shown in FIG. 10A, SiO ₂ 33 is formed on the wiring layers 30a, 35, and 36 by reacting SiH ₄ that has been made into plasma and O ₂ . Thereby, the SiO ₂ film 32a is formed on the wiring layers 30a, 35, and 36. Further, as shown in FIG. 10 (b), a part 32b of the SiO ₂ film is Ar-etched with Ar34 which is also made into plasma. Then, as shown in FIG. 10 (c), it is stacked new SiO ₂ film 32c on the SiO ₂ film 32a by depositing new _SiO 2 33 on the SiO ₂ film 32a. Further, as shown in FIG. 10D, a part 32d of the SiO ₂ film is etched by Ar34. A high-density plasma oxide film (SiO ₂ film) is formed by carrying out the film formation process and the etching process simultaneously or repeatedly. As a result, a highly embedded SiO ₂ film can be formed in the step-shaped portion.

As for the above, etching by Ar34 is promoted during the deposition of SiO ₂ 33 by the high-density plasma. Thereby, the wiring layer 30a by etching during deposition of _SiO 2 33, deposition of _SiO 2 33 is delayed with respect to the stepped portions of 35 and 36, the gap filling capability of the deposited film increases.

  FIG. 8A shows HDP. In a CVD apparatus, it is a top view of the conventional wafer holding part. As shown in FIG. 8A, the wafer holder mainly includes an electrostatic chuck (ESC) 2, a coloring ring 1 surrounding the electrostatic chuck, and a wafer stopper 20, and pusher pins 3 for transporting the wafer are static. Built in the electric chuck 2. The wafer stopper 20 is provided to prevent the wafer from being displaced until the wafer 21 is transported and fixed by the electrostatic chuck 2. The coloring ring 1 is made of ceramics and is installed to protect the side surface of the electrostatic chuck 2 from plasma and introduced gas.

Japanese Patent Laid-Open No. 10-12608 (paragraphs 0016 to 0020)

The problem to be solved by the present invention will be described with reference to FIGS.
FIG. 9 is a process flow for explaining a process of forming a general Al wiring layer and a buried oxide film of Al wiring, and FIG. 7 is a conceptual diagram of the process flow shown in FIG.

  First, in the step of forming an Al sputtered film as a wiring layer, when a sputter apparatus having a wafer support portion smaller than the wafer diameter is used, the Al sputtered film 30 becomes the outer peripheral back surface of the wafer 21 as shown in FIG. (1).

  Thereafter, as shown in FIG. 7B, a resist pattern 31 for forming an Al wiring layer is formed on the Al sputtered film 30 (S2). Next, as shown in FIG. 7C, the Al sputtered film 30 is etched using the resist pattern 31 as a mask, thereby forming an Al wiring layer 30a (S3). At this time, the Al sputtered film that wraps around the back surface is not removed by the subsequent etching, and remains as the Al film remaining 30b. The state is maintained until the buried oxide film forming process using the CVD apparatus.

  Next, as shown in FIG. 7D, the resist pattern 31 is peeled off (S4). Thereafter, as shown in FIG. 7E, HDP. A buried oxide film 32 is formed using a CVD apparatus (S5).

  FIG. 8B is a cross-sectional view for explaining the conventional wafer holding portion shown in FIG. As shown in FIG. 8B, since the electrostatic chuck 2 of the wafer holding unit is smaller than the diameter of the wafer 21, the film forming process is performed with the end of the wafer 21 and its back surface protruding into the space. At this time, the Al film 30 b existing at the end of the wafer 21 is etched by the action of Ar etching and peeled off from the wafer 21. As a result, it adheres to the coloring 1 for protecting the electrostatic chuck 2 installed on the outer periphery of the wafer and deposits as a foreign matter 30b. Many foreign substances 30b are stacked by repeatedly performing wafer processing.

  As described above, a large amount of Al deposits (foreign matter) stacked on the coloring ring causes abnormal adhesion of foreign matter on the wafer surface, transport errors caused by foreign matter adhering to the electrostatic chuck during wafer transport, and wafers. This causes a problem such as processing interruption. This makes it impossible to produce a stable product.

  HDP. In the pre-use process of the CVD apparatus, there is a method in which the outer peripheral portion of the wafer and the back surface thereof are washed or etched to wash off Al products or other deposits. However, this method is an additional step, which leads to additional investment in the cleaning apparatus, an increase in manufacturing cost, and an increase in processing time. Furthermore, it is very difficult from a technical point of view to clean or etch the foreign material or other products of the Al film adhering to the outer peripheral portion and the back surface thereof without affecting the wafer surface.

  Some embodiments according to the present invention are a CVD apparatus and a semiconductor device manufacturing method capable of suppressing the film peeled from the outer peripheral portion of the wafer from adhering to the coloring as a foreign matter.

In order to solve the above problems, a high-density plasma CVD apparatus according to the present invention is a high-density plasma CVD apparatus that forms a highly embedded film on a wafer by performing film formation and etching simultaneously or repeatedly.
An electrostatic chuck holding the wafer and having a smaller diameter than the wafer;
A color ring installed to surround the side wall of the electrostatic chuck;
Comprising
The coloring has a facing portion that faces the side wall of the electrostatic chuck and is located below the outer peripheral portion of the wafer, and the facing portion is formed to surround the side wall of the electrostatic chuck,
The outer side of the opposing part with respect to the electrostatic chuck is located on the inner side of the outermost end part of the outer peripheral part of the wafer.

  According to the high-density plasma CVD apparatus, the facing portion of the coloring is positioned inside the outermost end portion of the outer peripheral portion of the wafer held by the electrostatic chuck so as to surround the side wall of the electrostatic chuck. Forming. Thereby, even if the film adhering to the outer peripheral portion of the wafer and the back surface of the wafer is peeled off, it can be prevented that the film adheres as foreign matter to the upper portion of the coloring.

  In the solid-state imaging device according to the present invention, an inclined surface may be formed at an upper end portion of the facing portion.

  Further, in the solid-state imaging device according to the present invention, the gap between the upper end portion of the facing portion and the back surface of the wafer is a range that does not come into contact with the wafer in consideration of a dimensional error when manufacturing the coloring. It is also possible to make it as small as possible.

  According to the method for manufacturing a semiconductor device of the present invention, the gap between the upper end portion of the facing portion and the back surface of the wafer is made as small as possible without contacting the wafer. As a result, there is no space for the foreign matter peeled off from the outer peripheral portion of the wafer and its back surface to adhere to the upper end portion of the coloring. As a result, stable production can be realized without any particle abnormality or conveyance error abnormality.

In the method for manufacturing a semiconductor device according to the present invention, a wafer having a film formed on the outer periphery of the wafer is introduced into a high-density plasma CVD apparatus, and film formation and etching are simultaneously or repeatedly performed by the high-density plasma CVD apparatus. In a manufacturing method of a semiconductor device including a step of forming a highly embedded film on the wafer by performing,
The high-density plasma CVD apparatus holds the wafer and has an electrostatic chuck having a smaller diameter than the wafer;
A color ring installed to surround the side wall of the electrostatic chuck;
Comprising
The coloring has a facing portion that faces the side wall of the electrostatic chuck and is located below the outer peripheral portion of the wafer, and the facing portion is formed to surround the side wall of the electrostatic chuck,
The outer side of the opposing part with respect to the electrostatic chuck is located on the inner side of the outermost end part of the outer peripheral part of the wafer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 6 shows a representative HDP. It is a schematic diagram for demonstrating a CVD apparatus.
FIG. 1A shows the HDP. It is a top view of the wafer holding part in a CVD apparatus, FIG.1 (b) is sectional drawing for demonstrating the structure of a coloring in the wafer holding part shown to Fig.1 (a).

  HDP. As shown in FIG. 6, the CVD apparatus has a high-frequency plasma power source (not shown) in the upper portion of the vacuum chamber, and a bias power source (not shown) and a power source for the electrostatic chuck (not shown) in the lower portion. )have. These power supplies are installed in the ground. A current flows in the direction indicated by arrows 5 and 7 in the apparatus by the high-frequency power source, and a current flows in the direction indicated by arrow 10 in the apparatus by the bias power source. HDP. The CVD apparatus has a wafer holder made of an electrostatic chuck (ESC) 2 and a ceramic color ring 1a surrounding the electrostatic chuck 2, and pusher pins 3 built in the electrostatic chuck 2 are used to carry the wafer. Used when doing. The coloring ring 1 is made of an insulator such as ceramics or quartz, and protects the side surface of the electrostatic chuck (ESC) 2 from plasma and film forming gas. The bias power source and the power source for the electrostatic chuck are connected to the electrostatic chuck 2 by a collective wiring 12.

  The wafer is held by an electrostatic chuck (ESC) 2 installed at the lower part of the chamber, and the back surface of the wafer is chucked by static electricity during film formation. At this time, as indicated by an arrow 11, static electricity is generated by passing a current. Further, there is a He gas supply port on the surface of the electrostatic chuck (ESC) 2, and a film forming process is performed while the wafer is cooled by flowing He gas to the back surface of the wafer through a path indicated by an arrow 8. Further, the temperature in the apparatus is adjusted with a coolant so that the temperature in the vacuum chamber and the wafer does not rise due to the generation of plasma. At this time, ethylene glycol or the like is used as the coolant, and the coolant is circulated in the apparatus as indicated by arrows 4 and 9.

A source gas for film formation is supplied from a gas introduction nozzle into a vacuum chamber through a line having a control valve and a mass flow controller (MFC) as indicated by an arrow 6. In addition, SiH ₄ , O _2, Ar, or the like is used as the gas to be introduced, and plasma in which these gases are dielectrically coupled at a high frequency is generated and supplied onto the wafer.

  The wafer holder shown in FIG. 1A is provided with an electrostatic chuck (ESC) 2 and a ceramic color ring 1 a so as to surround the electrostatic chuck 2. At the time of film formation, the wafer 21 is transported into the vacuum chamber, and the wafer 21 is fixed on the electrostatic chuck 2 while placing the wafer 21 on the pusher pins 3 and detecting whether or not the wafer is displaced. In order to prevent the wafer 21 from being displaced during film formation, a wafer stopper is provided on the color ring 1a.

  FIG. 1B is a cross-sectional view for explaining the structure of the coloring in the wafer holder shown in FIG. As shown in FIG. 1B, the coloring ring 1a installed so as to surround the electrostatic chucks 2 and 2a is obtained by partially removing the conventional coloring (see FIG. 8B). . Specifically, the wafer stopper 20 incorporated in the coloring ring 1a is left, and a portion facing the side wall portion of the electrostatic chuck 2 is left, and the other portion y is removed. Therefore, the portion of the upper portion of the coloring ring 1a that overlaps the outer peripheral portion of the wafer 21 is reduced by a part x of the shaved portion y. Further, an inclined portion 13a remains in the upper portion of the coloring ring 1a.

  That is, the coloring ring 1 a has a facing portion 40 a that faces the side wall of the electrostatic chuck 2 and is located below the outer peripheral portion of the wafer 21, and the facing portion 40 a is formed so as to surround the side wall of the electrostatic chuck 2. Thus, the outer side 41 a is located on the inner side by a predetermined distance x from the outermost end portion of the outer peripheral portion of the wafer 21 with respect to the electrostatic chuck 2 in the facing portion 40 a.

  Next, the HDP. Of FIG. 6 having the wafer holder shown in FIGS. An explanation will be given of forming a buried oxide film after forming an Al wiring by using a CVD apparatus. A wafer in which the Al film or Al alloy film formed on the outer periphery of the wafer and the back surface of the outer periphery remains is HDP. Put in CVD equipment. Since the electrostatic chuck 2 of the wafer holding unit is smaller than the diameter of the wafer 21, the film forming process is performed with the end of the wafer 21 and its back surface protruding into the space as shown in FIG. At this time, the Al film existing on the end portion and the back surface of the wafer 21 is etched by the action of the Ar etching described with reference to FIG. The foreign matter peeled off from the wafer 21 falls on the coloring ring 1a. At that time, since the coloring ring 1a is scraped off directly under the outer peripheral portion of the wafer 21, it is exhausted to the outside of the wafer while it falls.

  As described above, according to the first embodiment of the present invention, the portion where the rear surface of the wafer 21 and the upper portion of the coloring ring 1a overlap is made as small as possible by removing the inclined portion 13a on the upper portion in the structure of the coloring ring 1a. ing. Therefore, even if the film adhering to the outer peripheral portion and the back surface of the wafer 21 is peeled off by Ar etching, it can be prevented from adhering as a foreign matter to the upper portion of the coloring 1a, and the exhaust is performed without adhering to the coloring 1a. be able to. Thereby, it is possible to prevent foreign matters from remaining on the coloring and in the apparatus. As a result, stable production can be realized without any particle abnormality or conveyance error abnormality.

  Next, a second embodiment of the present invention will be described with reference to FIG. 2, and portions different from the first embodiment will be described. FIG. 2 is a cross-sectional view for explaining the structure of the coloring in the wafer holder.

  As shown in FIG. 2, the coloring ring 1a installed so as to surround the electrostatic chucks 2 and 2a is obtained by partially removing the conventional coloring (see FIG. 8B). Specifically, the wafer stopper 20 incorporated in the coloring ring 1b is left, and a portion facing the side wall portion of the electrostatic chuck 2 is left, and the other portion y is removed. Thereby, an inclined portion remains in the upper part of the coloring ring 1b, and the same shape as that of the first embodiment is obtained. Furthermore, by advancing the inclined portion, the inclined portion 13b is shaped such that the inclined surface faces the outside of the chamber and the uppermost portion of the inclined portion is located on the side close to the electrostatic chuck side wall surface.

  The coloring ring 1 b has a facing portion 40 b that faces the side wall of the electrostatic chuck 2 and is positioned below the outer peripheral portion of the wafer 21. The facing portion 40 b is formed so as to surround the side wall of the electrostatic chuck 2. In addition, the outer side 41 b with respect to the electrostatic chuck 2 in the facing portion 40 b is located on the inner side by a predetermined distance x from the outermost end portion of the outer peripheral portion of the wafer 21.

  6 having the wafer holder shown in FIG. The description of the step of forming the buried oxide film after forming the Al wiring using the CVD apparatus is the same as that in the first embodiment, and therefore will be omitted.

  As described above, also in the second embodiment of the present invention, the same effect as that of the first embodiment can be obtained. Further, the inclined surface of the inclined portion 13b is opposite to that of the first embodiment. Thereby, when the foreign matter is peeled off from the outer peripheral portion of the wafer, it can be discharged to the outside of the wafer. As a result, stable production can be realized without any particle abnormality or conveyance error abnormality.

  Next, a third embodiment of the present invention will be described with reference to FIG. 3, and portions different from the first embodiment will be described. FIG. 3 is a cross-sectional view for explaining the structure of the coloring in the wafer holder.

  As shown in FIG. 3, in the coloring 1c installed so as to surround the electrostatic chucks 2 and 2a, the existing coloring is not reworked, but the shape is changed at the ceramic manufacturing stage. The upper portion of the coloring ring 1c has a flat surface 13c, and the gap between the back surface of the wafer and the flat surface 13c of the coloring ring 1c is formed as small as possible. This gap is made as small as possible within the range where it does not come into contact with the wafer in consideration of dimensional errors in manufacturing the coloring. Other shapes of the color ring 1c are the same as those in FIG.

  The coloring ring 1 c has a facing portion 40 c that faces the side wall of the electrostatic chuck 2 and is located below the outer peripheral portion of the wafer 21. The facing portion 40 c is formed so as to surround the side wall of the electrostatic chuck 2. The outer side 41 c of the opposing portion 40 c with respect to the electrostatic chuck 2 is located on the inner side by a predetermined distance x from the outermost end of the outer peripheral portion of the wafer 21.

  6 having the wafer holder shown in FIG. The description of the step of forming the buried oxide film after forming the Al wiring using the CVD apparatus is the same as that in the first embodiment, and therefore will be omitted.

  As described above, also in the third embodiment of the present invention, the same effect as that of the first embodiment can be obtained. In addition, since the shape is changed at the ceramic manufacturing stage of the coloring, it is not necessary to scrape after the manufacturing. The upper portion of the coloring ring 1c has a flat surface 13c, and the gap between the wafer back surface and the flat surface 13c of the coloring ring 1c is made as small as possible. Thereby, there is no space for foreign matter on the outer periphery of the wafer to adhere to the upper end of the coloring. As a result, stable production can be realized without any particle abnormality or conveyance error abnormality.

  Next, a fourth embodiment of the present invention will be described with reference to FIG. 4, and portions different from the first embodiment will be described. FIG. 4 is a cross-sectional view for explaining the structure of the coloring in the wafer holder.

  As shown in FIG. 4, in the color ring 1d installed so as to surround the electrostatic chucks 2 and 2a, the existing color ring is not reworked but the shape is changed at the ceramic manufacturing stage. An inclined portion 13d is formed on the upper portion of the coloring ring 1d, and a gap between the wafer back surface and the upper end portion of the coloring ring 1c is formed as small as possible. Further, by forming the inclined portion 13d on the upper portion of the coloring ring 1d, it is possible to further suppress foreign matters from adhering to the upper portion of the coloring ring 1d. The inclined surface of the inclined portion 13d faces the outside of the chamber, and the uppermost portion of the inclined portion is located on the side close to the side wall surface of the electrostatic chuck 2. Other shapes of the color ring 1d are the same as those in FIG.

  The coloring ring 1 d has a facing portion 40 d that faces the side wall of the electrostatic chuck 2 and is located below the outer peripheral portion of the wafer 21. The facing portion 40 d is formed so as to surround the side wall of the electrostatic chuck 2. In addition, the outer side 41 d with respect to the electrostatic chuck 2 in the facing portion 40 d is located on the inner side by a predetermined distance x from the outermost end portion of the outer peripheral portion of the wafer 21.

  As described above, also in the fourth embodiment of the present invention, the same effect as that of the third embodiment can be obtained.

  Next, a fifth embodiment of the present invention will be described with reference to FIG. 5, and portions different from the fourth embodiment will be described. FIG. 5 is a cross-sectional view for explaining the structure of the coloring in the wafer holder.

As shown in FIG. 5, the coloring ring 1e installed so as to surround the electrostatic chucks 2 and 2a is thinner in the portion facing the electrostatic chuck 2 than that of the coloring ring 1d shown in FIG. Is formed. Therefore, the portion where the upper portion of the coloring ring 1e and the back surface of the wafer 21 overlap can be made smaller than that of the coloring ring 1d shown in FIG. Specifically, it can be reduced by “x ₁ -x” as compared with the coloring shown in FIG.

Specifically, the coloring ring 1 e has a facing portion 40 e that faces the side wall of the electrostatic chuck 2 and is located below the outer peripheral portion of the wafer 21, and the facing portion 40 e surrounds the side wall of the electrostatic chuck 2. outer 41e against the electrostatic chuck 2 is formed, the facing portion 40e to is positioned inside a predetermined distance x ₁ from the outermost end of the outer peripheral portion of the wafer 21.

  As described above, also in the fifth embodiment of the present invention, the same effect as in the fourth embodiment can be obtained. Further, by forming the color ring 1e facing the side wall of the electrostatic chuck 2 to be thinner, the portion where the outer periphery of the wafer 21 and the color ring 1e overlap can be made smaller.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

(A) is an HDP. The top view of the wafer holding part in a CVD apparatus. (B) is sectional drawing for demonstrating the structure of a coloring in the wafer holding part shown to Fig.1 (a). Sectional drawing for demonstrating the structure of a coloring in the wafer holding part which concerns on 2nd Embodiment. Sectional drawing for demonstrating the structure of a coloring in the wafer holding part which concerns on 3rd Embodiment. Sectional drawing for demonstrating the structure of a coloring in the wafer holding part which concerns on 4th Embodiment. Sectional drawing for demonstrating the structure of a coloring in the wafer holding part which concerns on 5th Embodiment. A representative HDP. The schematic diagram for demonstrating a CVD apparatus. Sectional drawing for demonstrating the manufacturing method of the conventional semiconductor device. (A) shows a conventional HDP. The top view of the wafer holding part in a CVD apparatus. (B) is sectional drawing for demonstrating the structure of a coloring in the wafer holding part shown to Fig.8 (a). 9 is a flowchart for explaining a conventional method for manufacturing a semiconductor device. Sectional drawing for demonstrating the manufacturing method of the conventional semiconductor device.

Explanation of symbols

1, 1a, 1b, 1c, 1d, 1e ... coloring, 2, 2a ... electrostatic chuck (ESC), 3 ... pusher pin, 4 ... coolant (upper part), 5, 7 ... High frequency power supply (upper part), 6 ... gas introduction nozzle, 8 ... He gas supply port, 9 ... coolant (lower part), 10 ... bias power supply, 11 ... electrostatic Power supply for chuck, 12 ... wiring connected to the lower electrode, 20 ... wafer stopper, 21 ... wafer, 30, 30a, 35, 36 ... wiring layer, 30b ... film residue of Al film, 31 ... resist pattern, 32, 32a, 32b, 32c, 32d ... SiO ₂ film, 33 ... SiO ₂ , 34 ... Ar, 13a, 13b, 13d, 13e ... inclined portion, 13c ... flat _{surface, x} 1 ... predetermined _{distance, y} 1, ... that Orientation of the parts, 40a, 40b, 40c, 40d, 40e ··· facing portion, 41a, 41b, 41c, 41d, of 41e · · · inclined surface

Claims (4)

In a high-density plasma CVD apparatus that forms a highly embedded film on a wafer by performing film formation and etching simultaneously or repeatedly,
An electrostatic chuck holding the wafer and having a smaller diameter than the wafer;
A color ring installed to surround the side wall of the electrostatic chuck;
Comprising
The coloring has a facing portion facing the side wall of the electrostatic chuck and below the outer peripheral portion of the wafer, and the facing portion is formed to surround the side wall of the electrostatic chuck,
The high-density plasma CVD apparatus characterized in that the outer side of the counter part with respect to the electrostatic chuck is located on the inner side of the outermost end part of the outer peripheral part of the wafer.   2. The high density plasma CVD apparatus according to claim 1, wherein an inclined surface is formed at an upper end portion of the facing portion.   3. The gap between the upper end portion of the facing portion and the back surface of the wafer according to claim 1 or 2 as much as possible within a range that does not contact the wafer in consideration of a dimensional error in manufacturing the coloring. A high density plasma CVD apparatus characterized by being made small. A wafer having a film formed on the outer periphery of the wafer is introduced into a high-density plasma CVD apparatus, and film formation and etching are performed simultaneously or repeatedly by the high-density plasma CVD apparatus to form a highly embedded film. In a method for manufacturing a semiconductor device having a step of forming on a top,
The high-density plasma CVD apparatus holds the wafer and has an electrostatic chuck having a smaller diameter than the wafer;
A color ring installed to surround the side wall of the electrostatic chuck;
Comprising
The coloring has a facing portion that faces the side wall of the electrostatic chuck and is located below the outer peripheral portion of the wafer, and the facing portion is formed to surround the side wall of the electrostatic chuck,
The method of manufacturing a semiconductor device, wherein an outer side of the opposing portion with respect to the electrostatic chuck is positioned on an inner side of an outermost end portion of an outer peripheral portion of the wafer.

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