JP2009543354A5 - - Google Patents

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Publication number
JP2009543354A5
JP2009543354A5 JP2009518512A JP2009518512A JP2009543354A5 JP 2009543354 A5 JP2009543354 A5 JP 2009543354A5 JP 2009518512 A JP2009518512 A JP 2009518512A JP 2009518512 A JP2009518512 A JP 2009518512A JP 2009543354 A5 JP2009543354 A5 JP 2009543354A5
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JP
Japan
Prior art keywords
chamber
module
processing
modular
spray cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009518512A
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English (en)
Japanese (ja)
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JP5313890B2 (ja
JP2009543354A (ja
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Publication date
Priority claimed from US11/767,619 external-priority patent/US20080072820A1/en
Application filed filed Critical
Publication of JP2009543354A publication Critical patent/JP2009543354A/ja
Publication of JP2009543354A5 publication Critical patent/JP2009543354A5/ja
Application granted granted Critical
Publication of JP5313890B2 publication Critical patent/JP5313890B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009518512A 2006-06-30 2007-06-26 モジュラーｃｖｄエピタキシャル３００ミリ型リアクタ Expired - Fee Related JP5313890B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81807206P 2006-06-30 2006-06-30
US60/818,072 2006-06-30
US11/767,619 US20080072820A1 (en) 2006-06-30 2007-06-25 Modular cvd epi 300mm reactor
US11/767,619 2007-06-25
PCT/US2007/072121 WO2008005754A2 (en) 2006-06-30 2007-06-26 Modular chemical vapor deposition (cvd) reactor

Publications (3)

Publication Number Publication Date
JP2009543354A JP2009543354A (ja) 2009-12-03
JP2009543354A5 true JP2009543354A5 (enExample) 2010-07-15
JP5313890B2 JP5313890B2 (ja) 2013-10-09

Family

ID=38895321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518512A Expired - Fee Related JP5313890B2 (ja) 2006-06-30 2007-06-26 モジュラーｃｖｄエピタキシャル３００ミリ型リアクタ

Country Status (6)

Country Link
US (1) US20080072820A1 (enExample)
JP (1) JP5313890B2 (enExample)
KR (1) KR20090024830A (enExample)
DE (1) DE112007001548T5 (enExample)
TW (1) TW200814155A (enExample)
WO (1) WO2008005754A2 (enExample)

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CN101980959A (zh) * 2008-03-26 2011-02-23 Gt太阳能公司 涂覆金的多晶硅反应器系统和方法
USD642605S1 (en) 2010-04-02 2011-08-02 Applied Materials, Inc. Lid assembly for a substrate processing chamber
JP5833429B2 (ja) * 2011-12-20 2015-12-16 スタンレー電気株式会社 半導体製造装置
KR101911722B1 (ko) * 2012-01-10 2018-10-25 에스케이실트론 주식회사 반도체 제조장치용 정렬 장치
US9905444B2 (en) * 2012-04-25 2018-02-27 Applied Materials, Inc. Optics for controlling light transmitted through a conical quartz dome
US10202707B2 (en) * 2012-04-26 2019-02-12 Applied Materials, Inc. Substrate processing system with lamphead having temperature management
KR20140023807A (ko) * 2012-08-17 2014-02-27 삼성전자주식회사 반도체 소자를 제조하는 설비
JP6101504B2 (ja) * 2013-02-14 2017-03-22 株式会社日立ハイテクノロジーズ 真空処理装置のモジュール検査装置
CN107546157A (zh) * 2013-11-22 2018-01-05 应用材料公司 易取灯头
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
JP6210382B2 (ja) * 2014-09-05 2017-10-11 信越半導体株式会社 エピタキシャル成長装置
US20230154766A1 (en) * 2021-11-18 2023-05-18 Applied Materials, Inc. Pre-clean chamber assembly architecture for improved serviceability
CN114875384A (zh) * 2022-04-26 2022-08-09 江苏微导纳米科技股份有限公司 半导体加工设备
CN115064471B (zh) * 2022-08-01 2023-11-28 北京屹唐半导体科技股份有限公司 晶圆的热处理装置

Family Cites Families (22)

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US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
US5855465A (en) * 1996-04-16 1999-01-05 Gasonics International Semiconductor wafer processing carousel
JPH10214117A (ja) * 1998-03-05 1998-08-11 Ckd Corp ガス供給集積ユニット及びそのシステム
US6019839A (en) * 1998-04-17 2000-02-01 Applied Materials, Inc. Method and apparatus for forming an epitaxial titanium silicide film by low pressure chemical vapor deposition
US6210484B1 (en) * 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
JP4294791B2 (ja) * 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
US6476362B1 (en) * 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
US6344631B1 (en) * 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
US6455814B1 (en) * 2001-11-07 2002-09-24 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP4215447B2 (ja) * 2002-04-17 2009-01-28 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US6827789B2 (en) * 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US6833322B2 (en) * 2002-10-17 2004-12-21 Applied Materials, Inc. Apparatuses and methods for depositing an oxide film
WO2004049405A1 (en) * 2002-11-22 2004-06-10 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP4522795B2 (ja) * 2003-09-04 2010-08-11 株式会社日立ハイテクノロジーズ 真空処理装置
US7335277B2 (en) * 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
JP2006022375A (ja) * 2004-07-08 2006-01-26 Alps Electric Co Ltd 基板処理装置
US20060137609A1 (en) * 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus

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