KR20090024830A - 모듈형 ｃｖｄ ｅｐｉ 300ｍｍ 반응기 - Google Patents

모듈형 ｃｖｄ ｅｐｉ 300ｍｍ 반응기 Download PDF

Info

Publication number
KR20090024830A
KR20090024830A KR1020097002008A KR20097002008A KR20090024830A KR 20090024830 A KR20090024830 A KR 20090024830A KR 1020097002008 A KR1020097002008 A KR 1020097002008A KR 20097002008 A KR20097002008 A KR 20097002008A KR 20090024830 A KR20090024830 A KR 20090024830A
Authority
KR
South Korea
Prior art keywords
chamber
module
modular
processing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097002008A
Other languages
English (en)
Korean (ko)
Inventor
브라이언 에이치. 버로우즈
크레이그 알. 메츠너
데니스 엘. 데말스
로저 엔. 앤더슨
주안 엠. 차신
데이비드 케이. 칼손
데이비드 마사유키 이시카와
제프리 캠벨
리차드 오. 콜린스
케이쓰 엠. 마길
임란 아프잘
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090024830A publication Critical patent/KR20090024830A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020097002008A 2006-06-30 2007-06-26 모듈형 ｃｖｄ ｅｐｉ 300ｍｍ 반응기 Ceased KR20090024830A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US81807206P 2006-06-30 2006-06-30
US60/818,072 2006-06-30
US11/767,619 US20080072820A1 (en) 2006-06-30 2007-06-25 Modular cvd epi 300mm reactor
US11/767,619 2007-06-25

Publications (1)

Publication Number Publication Date
KR20090024830A true KR20090024830A (ko) 2009-03-09

Family

ID=38895321

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097002008A Ceased KR20090024830A (ko) 2006-06-30 2007-06-26 모듈형 ｃｖｄ ｅｐｉ 300ｍｍ 반응기

Country Status (6)

Country Link
US (1) US20080072820A1 (enExample)
JP (1) JP5313890B2 (enExample)
KR (1) KR20090024830A (enExample)
DE (1) DE112007001548T5 (enExample)
TW (1) TW200814155A (enExample)
WO (1) WO2008005754A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130081913A (ko) * 2012-01-10 2013-07-18 주식회사 엘지실트론 반도체 제조장치용 정렬 장치
KR20150003841A (ko) * 2012-04-26 2015-01-09 어플라이드 머티어리얼스, 인코포레이티드 온도 관리를 갖는 램프헤드를 구비하는 기판 처리 시스템

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101980959A (zh) * 2008-03-26 2011-02-23 Gt太阳能公司 涂覆金的多晶硅反应器系统和方法
USD642605S1 (en) 2010-04-02 2011-08-02 Applied Materials, Inc. Lid assembly for a substrate processing chamber
JP5833429B2 (ja) * 2011-12-20 2015-12-16 スタンレー電気株式会社 半導体製造装置
US9905444B2 (en) * 2012-04-25 2018-02-27 Applied Materials, Inc. Optics for controlling light transmitted through a conical quartz dome
KR20140023807A (ko) * 2012-08-17 2014-02-27 삼성전자주식회사 반도체 소자를 제조하는 설비
JP6101504B2 (ja) * 2013-02-14 2017-03-22 株式会社日立ハイテクノロジーズ 真空処理装置のモジュール検査装置
CN107546157A (zh) * 2013-11-22 2018-01-05 应用材料公司 易取灯头
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
JP6210382B2 (ja) * 2014-09-05 2017-10-11 信越半導体株式会社 エピタキシャル成長装置
US20230154766A1 (en) * 2021-11-18 2023-05-18 Applied Materials, Inc. Pre-clean chamber assembly architecture for improved serviceability
CN114875384A (zh) * 2022-04-26 2022-08-09 江苏微导纳米科技股份有限公司 半导体加工设备
CN115064471B (zh) * 2022-08-01 2023-11-28 北京屹唐半导体科技股份有限公司 晶圆的热处理装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
US5855465A (en) * 1996-04-16 1999-01-05 Gasonics International Semiconductor wafer processing carousel
JPH10214117A (ja) * 1998-03-05 1998-08-11 Ckd Corp ガス供給集積ユニット及びそのシステム
US6019839A (en) * 1998-04-17 2000-02-01 Applied Materials, Inc. Method and apparatus for forming an epitaxial titanium silicide film by low pressure chemical vapor deposition
US6210484B1 (en) * 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
JP4294791B2 (ja) * 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US6376387B2 (en) * 1999-07-09 2002-04-23 Applied Materials, Inc. Method of sealing an epitaxial silicon layer on a substrate
US6476362B1 (en) * 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
US6344631B1 (en) * 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
US6455814B1 (en) * 2001-11-07 2002-09-24 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP4215447B2 (ja) * 2002-04-17 2009-01-28 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US6827789B2 (en) * 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US6833322B2 (en) * 2002-10-17 2004-12-21 Applied Materials, Inc. Apparatuses and methods for depositing an oxide film
WO2004049405A1 (en) * 2002-11-22 2004-06-10 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP4522795B2 (ja) * 2003-09-04 2010-08-11 株式会社日立ハイテクノロジーズ 真空処理装置
US7335277B2 (en) * 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
JP2006022375A (ja) * 2004-07-08 2006-01-26 Alps Electric Co Ltd 基板処理装置
US20060137609A1 (en) * 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130081913A (ko) * 2012-01-10 2013-07-18 주식회사 엘지실트론 반도체 제조장치용 정렬 장치
KR20150003841A (ko) * 2012-04-26 2015-01-09 어플라이드 머티어리얼스, 인코포레이티드 온도 관리를 갖는 램프헤드를 구비하는 기판 처리 시스템

Also Published As

Publication number Publication date
WO2008005754A2 (en) 2008-01-10
WO2008005754A3 (en) 2008-10-23
TW200814155A (en) 2008-03-16
JP5313890B2 (ja) 2013-10-09
JP2009543354A (ja) 2009-12-03
US20080072820A1 (en) 2008-03-27
DE112007001548T5 (de) 2009-05-07

Similar Documents

Publication Publication Date Title
KR20090024830A (ko) 모듈형 ｃｖｄ ｅｐｉ 300ｍｍ 반응기
US8663753B2 (en) High throughput multi-wafer epitaxial reactor
US8142521B2 (en) Large scale MOCVD system for thin film photovoltaic devices
US9396909B2 (en) Gas dispersion apparatus
US9074284B2 (en) Heat treatment apparatus
US9920451B2 (en) High throughput multi-wafer epitaxial reactor
US9096930B2 (en) Apparatus for manufacturing thin film photovoltaic devices
JP5562409B2 (ja) 半導体装置の製造方法及び基板製造方法及び基板処理装置
TWI589724B (zh) 熱絲化學氣相沉積腔室之噴頭設計
US8420981B2 (en) Apparatus for thermal processing with micro-environment
JP2012195565A (ja) 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2017108152A (ja) 基板上に材料を堆積するための装置
JP2024534994A (ja) 原子層堆積部品コーティング用チャンバ
KR102323392B1 (ko) Epi 챔버 상의 이중 보조 도펀트 유입구들
CN101443475A (zh) 模块化化学气相沉积（cvd）反应器
JP2012174725A (ja) 基板処理装置
TWM413210U (en) MOCVD processing system to realize automatic substrate transmission
JP2022105278A (ja) コーティング装置およびそのキャリヤ受座
CN113957411B (zh) 一种热丝化学气相沉积设备
KR20050095413A (ko) 반도체 소자 제조용 화학 기상 증착 설비

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20090130

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20090130

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20101105

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20110127

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20101105

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I