JP2009543324A - 静電気放電保護装置及びそのための方法 - Google Patents
静電気放電保護装置及びそのための方法 Download PDFInfo
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- JP2009543324A JP2009543324A JP2009517460A JP2009517460A JP2009543324A JP 2009543324 A JP2009543324 A JP 2009543324A JP 2009517460 A JP2009517460 A JP 2009517460A JP 2009517460 A JP2009517460 A JP 2009517460A JP 2009543324 A JP2009543324 A JP 2009543324A
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- electrostatic discharge
- discharge protection
- voltage
- npn transistor
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- 238000000034 method Methods 0.000 title description 4
- 238000005513 bias potential Methods 0.000 claims abstract description 10
- 230000003071 parasitic effect Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 description 4
- 230000001960 triggered effect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
以下の説明を通じて、同一の符号は同様の部材を示すように使用される。
Claims (6)
- 第2の静電気放電保護素子(114)に直列に接続された第1の静電気放電保護素子(102)を有するスタック構成(101)を備え、
前記スタック構成(101)は、使用時に前記第1及び第2の静電気放電保護素子(102,114)の間にバイアス電位を提供するように設けられ、
前記スタック構成(101)は、使用時に前記第1及び第2の静電気放電保護素子(102,114)にわたって追加のバイアス電位を提供するように設けられた静電気放電保護装置(100)において、
前記スタック構成(101)は、前記追加のバイアス電位以下における寄生現象に応答することが抑制される静電気放電保護装置。 - 前記バイアス電位は実質的に固定されている請求項1に記載の静電気放電保護装置。
- 前記スタック構成は、前記バイアス電位を提供するためのクランプ構成(122)を更に備える請求項1又は2に記載の静電気放電保護装置。
- 前記追加のバイアス電位は前記クランプ構成(122)によって提供される請求項3に記載の静電気放電保護装置。
- 前記第1及び第2の静電気放電保護素子(102,114)は、静電気放電現象を逸らすための閾値電圧を提供するように設けられている請求項1〜4の何れか1項に記載の静電気放電保護装置。
- 前記クランプ構成(124)は、第2の電圧クランプ(126)に接続された第1の電圧クランプ(124)を備える請求項3〜5の何れか1項に記載の静電気放電保護装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2006/053367 WO2008004035A1 (en) | 2006-07-03 | 2006-07-03 | Electrostatic discharge protection apparatus and method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009543324A true JP2009543324A (ja) | 2009-12-03 |
Family
ID=37806884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009517460A Pending JP2009543324A (ja) | 2006-07-03 | 2006-07-03 | 静電気放電保護装置及びそのための方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9536869B2 (ja) |
EP (1) | EP2041791A1 (ja) |
JP (1) | JP2009543324A (ja) |
WO (1) | WO2008004035A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010093000A (ja) * | 2008-10-07 | 2010-04-22 | New Japan Radio Co Ltd | 半導体静電保護装置 |
JP2011018685A (ja) * | 2009-07-07 | 2011-01-27 | Renesas Electronics Corp | Esd保護素子 |
JP2019197920A (ja) * | 2013-11-28 | 2019-11-14 | ローム株式会社 | 半導体装置および半導体モジュール |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5341501B2 (ja) * | 2008-12-24 | 2013-11-13 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | Rf信号切替回路 |
WO2012032476A1 (en) * | 2010-09-09 | 2012-03-15 | Koninklijke Philips Electronics N.V. | A method and a device for attracting magnetic particles to a surface |
US9620495B2 (en) | 2012-09-12 | 2017-04-11 | Nxp Usa, Inc. | Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device |
US9673189B2 (en) * | 2015-10-28 | 2017-06-06 | United Microelectronics Corp. | ESD unit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0297066A (ja) * | 1988-05-26 | 1990-04-09 | Texas Instr Inc <Ti> | Soi回路用esd保護 |
JPH07176682A (ja) * | 1993-11-03 | 1995-07-14 | Plessey Semiconductors Ltd | 過電圧保護回路 |
US5751525A (en) * | 1996-01-05 | 1998-05-12 | Analog Devices, Inc. | EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages |
JP2001339044A (ja) * | 2000-05-26 | 2001-12-07 | Mitsumi Electric Co Ltd | 半導体装置の静電保護回路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
JPH06169241A (ja) * | 1992-10-01 | 1994-06-14 | Mitsubishi Electric Corp | 短絡保護回路及び電力用ダーリントン・トランジスタ・モジュール |
US6479872B1 (en) * | 1998-12-28 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Dynamic substrate-coupled electrostatic discharging protection circuit |
US6577481B2 (en) * | 2000-11-07 | 2003-06-10 | Texas Instruments Incorporated | Cascoded NPN electrostatic discharge protection circuit |
US7075763B2 (en) * | 2002-10-31 | 2006-07-11 | Micron Technology, Inc. | Methods, circuits, and applications using a resistor and a Schottky diode |
US7638847B1 (en) * | 2002-11-14 | 2009-12-29 | Altera Corporation | ESD protection structure |
EP1482554B1 (en) | 2003-05-28 | 2006-03-01 | Interuniversitair Microelektronica Centrum ( Imec) | Electrostatic discharge protection device |
-
2006
- 2006-07-03 EP EP06809343A patent/EP2041791A1/en not_active Withdrawn
- 2006-07-03 US US12/304,849 patent/US9536869B2/en active Active
- 2006-07-03 WO PCT/IB2006/053367 patent/WO2008004035A1/en active Application Filing
- 2006-07-03 JP JP2009517460A patent/JP2009543324A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0297066A (ja) * | 1988-05-26 | 1990-04-09 | Texas Instr Inc <Ti> | Soi回路用esd保護 |
JPH07176682A (ja) * | 1993-11-03 | 1995-07-14 | Plessey Semiconductors Ltd | 過電圧保護回路 |
US5751525A (en) * | 1996-01-05 | 1998-05-12 | Analog Devices, Inc. | EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages |
JP2001339044A (ja) * | 2000-05-26 | 2001-12-07 | Mitsumi Electric Co Ltd | 半導体装置の静電保護回路 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010093000A (ja) * | 2008-10-07 | 2010-04-22 | New Japan Radio Co Ltd | 半導体静電保護装置 |
JP2011018685A (ja) * | 2009-07-07 | 2011-01-27 | Renesas Electronics Corp | Esd保護素子 |
JP2019197920A (ja) * | 2013-11-28 | 2019-11-14 | ローム株式会社 | 半導体装置および半導体モジュール |
US10886300B2 (en) | 2013-11-28 | 2021-01-05 | Rohm Co., Ltd. | Semiconductor device |
US11367738B2 (en) | 2013-11-28 | 2022-06-21 | Rohm Co., Ltd. | Semiconductor device |
US11908868B2 (en) | 2013-11-28 | 2024-02-20 | Rohm Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO2008004035A1 (en) | 2008-01-10 |
EP2041791A1 (en) | 2009-04-01 |
US20090116157A1 (en) | 2009-05-07 |
US9536869B2 (en) | 2017-01-03 |
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