JP2009540614A - 再発光半導体構成体を有する適応型ｌｅｄデバイス - Google Patents

再発光半導体構成体を有する適応型ｌｅｄデバイス Download PDF

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Publication number
JP2009540614A
JP2009540614A JP2009515571A JP2009515571A JP2009540614A JP 2009540614 A JP2009540614 A JP 2009540614A JP 2009515571 A JP2009515571 A JP 2009515571A JP 2009515571 A JP2009515571 A JP 2009515571A JP 2009540614 A JP2009540614 A JP 2009540614A
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led
light
layer
emitting semiconductor
article
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JP2009515571A
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Japanese (ja)
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JP2009540614A5 (enExample
Inventor
マイケル・エイ・ハース
トーマス・ジェイ・ミラー
アンドリュー・ジェイ・アウダーカーク
キャサリン・エイ・レザーデイル
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2009540614A publication Critical patent/JP2009540614A/ja
Publication of JP2009540614A5 publication Critical patent/JP2009540614A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
JP2009515571A 2006-06-14 2007-06-06 再発光半導体構成体を有する適応型ｌｅｄデバイス Pending JP2009540614A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80480006P 2006-06-14 2006-06-14
US11/755,010 US7902542B2 (en) 2006-06-14 2007-05-30 Adapted LED device with re-emitting semiconductor construction
PCT/US2007/070533 WO2007146709A2 (en) 2006-06-14 2007-06-06 Adapted led device with re-emitting semiconductor construction

Publications (2)

Publication Number Publication Date
JP2009540614A true JP2009540614A (ja) 2009-11-19
JP2009540614A5 JP2009540614A5 (enExample) 2010-07-15

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JP2009515571A Pending JP2009540614A (ja) 2006-06-14 2007-06-06 再発光半導体構成体を有する適応型ｌｅｄデバイス

Country Status (7)

Country Link
US (1) US7902542B2 (enExample)
EP (1) EP2038941A2 (enExample)
JP (1) JP2009540614A (enExample)
KR (1) KR20090015966A (enExample)
CN (1) CN101467279B (enExample)
TW (1) TW200812118A (enExample)
WO (1) WO2007146709A2 (enExample)

Cited By (2)

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JP2015079842A (ja) * 2013-10-16 2015-04-23 学校法人 名城大学 発光素子
JP2017517892A (ja) * 2014-05-27 2017-06-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体デバイス及び照明装置

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CN102804411A (zh) 2009-05-05 2012-11-28 3M创新有限公司 利用铟耗尽机理在含铟衬底上生长的半导体器件
JP2012526394A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Ｌｅｄとともに使用するための再発光半導体キャリア素子及び製造方法
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
CN102473817A (zh) 2009-06-30 2012-05-23 3M创新有限公司 无镉再发光半导体构造
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JP5765034B2 (ja) 2011-04-18 2015-08-19 セイコーエプソン株式会社 チアジアゾール系化合物、発光素子用化合物、発光素子、発光装置、認証装置および電子機器
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JP5970811B2 (ja) * 2011-12-28 2016-08-17 セイコーエプソン株式会社 発光素子、発光装置および電子機器
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JP2018508400A (ja) * 2015-01-06 2018-03-29 グリーン ライド リミテッドＧｒｅｅｎ Ｒｉｄｅ Ｌｔｄ． 車両用照明装置および方法
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JP2015079842A (ja) * 2013-10-16 2015-04-23 学校法人 名城大学 発光素子
JP2017517892A (ja) * 2014-05-27 2017-06-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体デバイス及び照明装置
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US20070290190A1 (en) 2007-12-20
WO2007146709A2 (en) 2007-12-21
CN101467279A (zh) 2009-06-24
EP2038941A2 (en) 2009-03-25
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TW200812118A (en) 2008-03-01
US7902542B2 (en) 2011-03-08

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