JP2009538761A5 - - Google Patents
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- Publication number
- JP2009538761A5 JP2009538761A5 JP2009513363A JP2009513363A JP2009538761A5 JP 2009538761 A5 JP2009538761 A5 JP 2009538761A5 JP 2009513363 A JP2009513363 A JP 2009513363A JP 2009513363 A JP2009513363 A JP 2009513363A JP 2009538761 A5 JP2009538761 A5 JP 2009538761A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dyads
- absorbent
- essentially
- substrate film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002745 absorbent Effects 0.000 claims 3
- 239000002250 absorbent Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000031700 light absorption Effects 0.000 claims 2
Claims (2)
- 少なくとも2つのダイアドを含む層のスタックを備える熱転写ドナー要素の基材フィルムであって、各ダイアドが、
吸収性の第1層と、
本質的に非吸収性の第2層とを含み、
前記少なくとも2つのダイアドの各吸収性第1層が、本質的に同じ光吸収率を有する、基材フィルム。 - 熱転写ドナー要素の基材フィルムを調製する方法であって、
少なくとも2つのダイアドを備える層のスタックを形成する工程
を含み、各ダイアドが、
吸収性の第1層と、
本質的に非吸収性の第2層と
を含み、前記少なくとも2つのダイアドの各吸収性第1層が、本質的に同じ光吸収率を有する、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/420,894 | 2006-05-30 | ||
US11/420,894 US7223515B1 (en) | 2006-05-30 | 2006-05-30 | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
PCT/US2007/068526 WO2007143322A1 (en) | 2006-05-30 | 2007-05-09 | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009538761A JP2009538761A (ja) | 2009-11-12 |
JP2009538761A5 true JP2009538761A5 (ja) | 2010-07-01 |
JP4897880B2 JP4897880B2 (ja) | 2012-03-14 |
Family
ID=38056735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513363A Active JP4897880B2 (ja) | 2006-05-30 | 2007-05-09 | 熱物質転写基材フィルム、ドナー要素、並びにそれを作製及び使用する方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7223515B1 (ja) |
JP (1) | JP4897880B2 (ja) |
KR (1) | KR101320383B1 (ja) |
CN (1) | CN101448640A (ja) |
TW (1) | TW200806496A (ja) |
WO (1) | WO2007143322A1 (ja) |
Families Citing this family (20)
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US20090110892A1 (en) * | 2004-06-30 | 2009-04-30 | General Electric Company | System and method for making a graded barrier coating |
US7223515B1 (en) * | 2006-05-30 | 2007-05-29 | 3M Innovative Properties Company | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
US8072402B2 (en) * | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US20090130427A1 (en) * | 2007-10-22 | 2009-05-21 | The Regents Of The University Of California | Nanomaterial facilitated laser transfer |
JP5449358B2 (ja) * | 2008-08-21 | 2014-03-19 | エーエスエムエル ホールディング エヌ.ブイ. | レチクル、リソグラフィ装置、およびレチクルを生成する方法 |
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WO2012003215A1 (en) | 2010-06-30 | 2012-01-05 | 3M Innovative Properties Company | Retarder film combinations with spatially selective birefringence reduction |
WO2012091243A1 (ko) * | 2010-12-27 | 2012-07-05 | 제일모직 주식회사 | 열전사 필름 |
GB201104565D0 (en) | 2011-03-17 | 2011-05-04 | Dupont Teijin Films Us Ltd | Polyester films |
US20130328098A1 (en) * | 2012-05-15 | 2013-12-12 | High Power Opto. Inc. | Buffer layer structure for light-emitting diode |
KR20150012591A (ko) * | 2013-07-25 | 2015-02-04 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
JP6497128B2 (ja) * | 2015-02-26 | 2019-04-10 | 住友金属鉱山株式会社 | ドナーシート |
CN108697955B (zh) * | 2016-01-12 | 2022-02-11 | 佐治亚-太平洋Mt.哈利有限责任公司 | 非织造清洁基材 |
GB201710213D0 (en) | 2017-06-27 | 2017-08-09 | Dupont Teijin Films U S Ltd Partnership | Functional film and production method |
CN110148678A (zh) * | 2019-04-29 | 2019-08-20 | 深圳市华星光电半导体显示技术有限公司 | 辅助电极转移结构及显示面板的制作方法 |
CN110794595A (zh) * | 2019-11-28 | 2020-02-14 | 华中科技大学 | 一种球形颗粒填充液晶的近场辐射热调整器 |
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US7223515B1 (en) * | 2006-05-30 | 2007-05-29 | 3M Innovative Properties Company | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
-
2006
- 2006-05-30 US US11/420,894 patent/US7223515B1/en active Active
-
2007
- 2007-04-19 US US11/737,345 patent/US7396632B2/en active Active
- 2007-05-09 CN CNA2007800182489A patent/CN101448640A/zh active Pending
- 2007-05-09 WO PCT/US2007/068526 patent/WO2007143322A1/en active Application Filing
- 2007-05-09 JP JP2009513363A patent/JP4897880B2/ja active Active
- 2007-05-09 KR KR1020087029158A patent/KR101320383B1/ko active IP Right Grant
- 2007-05-28 TW TW096119022A patent/TW200806496A/zh unknown
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