JP2009535814A5 - - Google Patents

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Publication number
JP2009535814A5
JP2009535814A5 JP2009507717A JP2009507717A JP2009535814A5 JP 2009535814 A5 JP2009535814 A5 JP 2009535814A5 JP 2009507717 A JP2009507717 A JP 2009507717A JP 2009507717 A JP2009507717 A JP 2009507717A JP 2009535814 A5 JP2009535814 A5 JP 2009535814A5
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JP
Japan
Prior art keywords
ion implantation
semiconductor material
uniform
measuring
function corresponding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2009507717A
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English (en)
Japanese (ja)
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JP2009535814A (ja
JP5231395B2 (ja
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Priority claimed from PCT/US2007/009257 external-priority patent/WO2007127084A1/en
Publication of JP2009535814A publication Critical patent/JP2009535814A/ja
Publication of JP2009535814A5 publication Critical patent/JP2009535814A5/ja
Application granted granted Critical
Publication of JP5231395B2 publication Critical patent/JP5231395B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009507717A 2006-04-26 2007-04-13 ドーズ均一性の補正技術 Expired - Fee Related JP5231395B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79497506P 2006-04-26 2006-04-26
US60/794,975 2006-04-26
PCT/US2007/009257 WO2007127084A1 (en) 2006-04-26 2007-04-13 Dose uniformity correction technique

Publications (3)

Publication Number Publication Date
JP2009535814A JP2009535814A (ja) 2009-10-01
JP2009535814A5 true JP2009535814A5 (https=) 2013-03-14
JP5231395B2 JP5231395B2 (ja) 2013-07-10

Family

ID=38445799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009507717A Expired - Fee Related JP5231395B2 (ja) 2006-04-26 2007-04-13 ドーズ均一性の補正技術

Country Status (5)

Country Link
US (1) US7692164B2 (https=)
JP (1) JP5231395B2 (https=)
KR (1) KR101353011B1 (https=)
TW (1) TWI435378B (https=)
WO (1) WO2007127084A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US8241924B2 (en) * 2009-02-27 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for controlling an implantation process
US8581217B2 (en) * 2010-10-08 2013-11-12 Advanced Ion Beam Technology, Inc. Method for monitoring ion implantation
US20140161651A1 (en) * 2012-12-11 2014-06-12 Micropump, Inc, a Unit of IDEX Corporation Compact integrated-drive pumps
WO2015077424A1 (en) * 2013-11-20 2015-05-28 Tel Epion Inc. Multi-step location specific process for substrate edge profile correction for gcib system
KR102439085B1 (ko) 2016-12-31 2022-08-31 어플라이드 머티어리얼스, 인코포레이티드 공간적 ald 프로세스 균일성을 개선하기 위한 웨이퍼 회전을 위한 장치 및 방법들
JP7177069B2 (ja) * 2017-01-27 2022-11-22 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 基板をプロセスチャンバ内で回転及び並進するためのシステム及び方法
JP6686962B2 (ja) * 2017-04-25 2020-04-22 信越半導体株式会社 貼り合わせウェーハの製造方法
CN117878003B (zh) * 2024-01-12 2025-08-08 西安奕斯伟材料科技股份有限公司 调整晶圆的参数的方法、装置、设备及计算机存储介质

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US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US4965862A (en) * 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
JPH02160354A (ja) * 1988-12-12 1990-06-20 Fuji Electric Co Ltd イオン注入制御装置
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5160846A (en) * 1990-10-03 1992-11-03 Eaton Corporation Method and apparatus for reducing tilt angle variations in an ion implanter
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5293216A (en) * 1990-12-31 1994-03-08 Texas Instruments Incorporated Sensor for semiconductor device manufacturing process control
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
US5432352A (en) * 1993-09-20 1995-07-11 Eaton Corporation Ion beam scan control
US5481116A (en) * 1994-06-10 1996-01-02 Ibis Technology Corporation Magnetic system and method for uniformly scanning heavy ion beams
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US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
US6534775B1 (en) * 2000-09-01 2003-03-18 Axcelis Technologies, Inc. Electrostatic trap for particles entrained in an ion beam
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US20030197133A1 (en) * 2002-04-23 2003-10-23 Turner Norman L. Method and apparatus for scanning a workpiece in a vacuum chamber
US6924215B2 (en) * 2002-05-29 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method of monitoring high tilt angle of medium current implant
KR20040060401A (ko) * 2002-12-30 2004-07-06 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법
US6777696B1 (en) * 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US6972236B2 (en) * 2004-01-30 2005-12-06 Chartered Semiconductor Manufacturing Ltd. Semiconductor device layout and channeling implant process
US7323695B2 (en) * 2004-04-05 2008-01-29 Axcelis Technologies, Inc. Reciprocating drive for scanning a workpiece
WO2005098909A2 (en) * 2004-04-05 2005-10-20 Axcelis Technologies, Inc. Drive system for scanning a workpiece through an ion beam
US7119343B2 (en) * 2004-05-06 2006-10-10 Axcelis Technologies, Inc. Mechanical oscillator for wafer scan with spot beam
US7462843B2 (en) * 2004-05-18 2008-12-09 Advanced Ion Bean Technology Inc. Apparatus and methods for ion beam implantation
US6992310B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Scanning systems and methods for providing ions from an ion beam to a workpiece
US6953942B1 (en) * 2004-09-20 2005-10-11 Axcelis Technologies, Inc. Ion beam utilization during scanned ion implantation

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