JP2009534842A - High temperature anodic bonding equipment - Google Patents

Abstract

  The anodic bond forming device includes a first bond forming plate mechanism that is operable to fit a first sheet of material and provide it with at least one of controlled heating, voltage, and cooling. Actuate second bond forming plate mechanism, first and second bond forming plate mechanisms that can be fitted and operated to provide at least one of controlled heating, voltage and cooling First and second bond formations to achieve a controlled pressure relative to each other of the first and second material sheets along the respective surfaces of the first and second material sheets, coupled in a possible manner A pressure mechanism that can operate to press the plate mechanism toward each other, sufficient heating, electrical power to achieve anodic bond formation between the first and second material sheets And a control unit which can operate to generate a control signal to the first and second bonding plate mechanism and the pressing mechanism for applying pressure profile.

Description

Explanation of related applications

  This application was filed on April 21, 2006 by Raymond C. Cady, with the name “A BONDING PLATE MECHANISM FOR USE IN ANODIC”. BONDING) ”claims the priority of the current pending US Provisional Patent Application No. 60/793976. The specification of this application is hereby incorporated by reference in its entirety.

  The present invention relates to an apparatus for making a semiconductor-on-insulator (SOI) structure, for example, using an anodic bonding method.

  To date, the semiconductor material most commonly used in semiconductor-on-insulator structures is silicon, and the abbreviation “SOI” has been applied to such structures. SOI technology is becoming increasingly important for displays such as high performance thin film transistors, solar cells and active matrix displays.

  For ease of explanation, the following discussion will sometimes refer to the SOI structure, but such reference to this particular type of structure is made to facilitate the description of the present invention and is never a book. It is not the goal to limit the scope of the invention and should not be so construed. The abbreviation “SOI” is used herein to refer to a general semiconductor-on-insulator structure, including but not limited to silicon-on-insulator. Similarly, the abbreviation “SOG” is used to refer to general semiconductor-on-glass structures, including but not limited to silicon-on-glass. The designation “SOG” is also meant to include glass-ceramic on semiconductor structures, including but not limited to glass-ceramic on silicon structures. The abbreviation “SOI” includes the SOG structure.

The SOI structure can have a substantially monocrystalline (generally 0.1-0.3 μm thick) thin silicon layer on an insulating material. Various methods for obtaining an SOI structure include (i) bonding a single crystal silicon wafer to another silicon wafer on which an oxide layer of SiO ₂ is grown, and (ii) embedded oxidation in the silicon wafer. There are an ion implantation method for forming a physical layer, and (iii) an ion implantation method for separating (peeling) a thin silicon layer from a silicon donor wafer and bonding it to another silicon wafer.

  Patent Document 1 discloses a process for obtaining a single crystal silicon film on a substrate using a thermal process. A semiconductor donor wafer having a flat surface is formed by the following steps: (i) Bombarding the surface of the wafer using ions that form a microbubble layer that defines a lower layer region constituting a donor wafer body and an upper layer region constituting a relatively thin release layer Implantation step, (ii) contacting the flat surface of the wafer with a stiffener composed of at least one hard material layer, and (iii) higher than the temperature at which the ion bombardment is performed and exerting a pressure effect in the microbubbles. A third stage temperature treatment step of the wafer and stiffener assembly at a temperature sufficient to cause separation between the thin film and the substrate body. Clearly, this process generally does not work for glass or glass-ceramic substrates, since certain glass and glass-ceramic bond formation requires fairly high temperatures.

  Patent Document 2 discloses a process for creating an SOG structure. The entire disclosure of Patent Document 2 is incorporated herein by reference. This process includes (i) a step of implanting hydrogen ions into the surface of the silicon donor wafer to form a release layer having a bonding surface, (ii) a step of bringing the bonding surface of the silicon donor wafer into contact with a glass substrate, iii) applying pressure, temperature and voltage to the silicon donor wafer and the glass substrate to facilitate bonding between the silicon donor wafer and the glass substrate, and (iv) a silicon donor for the glass substrate and the silicon release layer. Cooling the silicon donor wafer-glass substrate assembly to a common temperature to facilitate separation from the wafer.

  The SOG structure obtained by the process disclosed in Patent Document 2 can have, for example, a glass substrate and a semiconductor layer bonded to the glass substrate. The particular material of the semiconductor layer can be in the form of a substantially single crystal material. “Substantially” takes into account the fact that semiconductor materials usually contain at least some inherent or intentionally added internal or surface defects, such as lattice defects or few grain boundaries. , Used to represent semiconductor layers. “Substantially” also represents the fact that some dopant may distort the crystal structure of the bulk crystal or otherwise affect the crystal structure.

  For discussion purposes, the semiconductor layers discussed herein may be formed of silicon. However, it will be appreciated that the semiconductor material can be a silicon-based semiconductor or any other type of semiconductor, such as a III-V, II-VI, II-IV-V, etc. semiconductor. Examples of such materials include silicon (Si), germanium doped silicon (SiGe), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), GaP and InP. The glass substrate can be formed of oxide glass or oxide glass-ceramic. Although not required, the SOG structure described herein can have an oxide glass or an oxide glass-ceramic. As an example, the glass substrate is formed of a glass substrate containing alkaline earth ions, such as a substrate made with Corning Incorporated glass product catalog number 1737 or Corning glass product catalog number EAGLE2000 ™. Can do. These glass materials are used in particular for the production of liquid crystal displays, for example.

High quality anodic bonding between certain exfoliated semiconductor layers (eg, Si layers) and certain substrates, such as certain glass and glass-ceramic substrates, requires careful control of many process variables. Has been found by the inventors of the present invention. Such variables include temperature (especially high temperatures close to 1000 ° C. and / or high temperatures above 1000 ° C.), pressure (between the semiconductor layer and the substrate), voltage (to induce electrolysis), atmospheric conditions (eg , Vacuum or non-vacuum), cooling profile (to induce exfoliation), mechanical separation enhancement (eg to aid exfoliation), and the like. Conventional techniques for anodic bonding of semiconductor layers to glass substrates or glass-ceramic substrates do not fully address the above process variables. For example, the upper temperature limit of the conventional anodic bonding process is about 600 ° C.
US Pat. No. 5,374,564 US Patent Application Publication No. 2004/0229444

  Accordingly, there is a need in the art for a new apparatus that can achieve an improved anodic bonding process, for example, by controlling one or more of the above process variables.

  In accordance with one or more embodiments of the present invention, an anodic bond forming apparatus includes a first material sheet that is fitted and at least one of controlled heating, voltage, and cooling is the first material sheet. A first bond-forming plate mechanism that can be operated to provide a second material sheet that engages and operates to provide at least one of controlled heating, voltage, and cooling to the second material sheet A second bond-forming plate mechanism that can be operatively coupled to the first and second bond-forming plate mechanisms and first and second along respective surfaces of the first and second material sheets A pressure mechanism operable to press the first and second bond-forming plate mechanisms together to achieve a controlled pressure of the material sheets against each other; and Generate control signals to the first and second bond forming plate mechanisms and the pressure mechanism to provide sufficient heating, voltage and pressure profiles to achieve anodic bond formation between the first and second material sheets. A control unit capable of operating as described above.

  In accordance with one or more alternative embodiments of the present invention, an anodic bond forming apparatus includes a first material sheet that is fitted and at least one of controlled heating and voltage is applied to the first material sheet. A first bond-forming plate mechanism that can be operated to provide a second material sheet that is fitted and operates to provide at least one of controlled heating and voltage to the second material sheet. A second bond forming plate mechanism capable of being coupled, and operatively coupled to the first bond forming plate mechanism, the first and second to assist in anodic bond formation of the first and second material sheets Pressing the first and second bond forming plate mechanisms together to achieve a controlled pressure of the first and second material sheets against each other along the respective surfaces of the material sheets Increase may operate to - pressurizing mechanism comprises a.

  In accordance with one or more alternative embodiments of the present invention, an anodic bond forming device includes a first bond forming plate mechanism and a second bond forming plate mechanism operable to fit a first material sheet. A second bond forming plate mechanism operable to fit a material sheet, wherein each of the first and second bond forming plate mechanisms has a mounting surface; Operatively coupled to the first and second bond forming plate mechanisms and the second bond plate mechanisms defining a mounting plane for fitting each one of the second material sheets, and (i) closed When in position, movement of the lower bond forming plate mechanism toward the upper bond forming plate mechanism is controlled relative to the first and second each other along the respective surfaces of the first and second material sheets. To help hold the upper bond forming plate mechanism in place relative to the lower bond forming plate mechanism to achieve pressure, and (ii) the first movement of the first and second bond forming plate mechanisms The second bond forming plate mechanism is separated from the first bond forming plate mechanism in a direction substantially perpendicular to the respective mounting plane, and the second motion is such that the mounting plane of the second bond forming plate mechanism is the first. The second bond forming plate mechanism is tilted away from the first bond forming plate mechanism so as to form an oblique angle with respect to the mounting plane of the bond forming plate mechanism. An opening / closing mechanism capable of

  In accordance with one or more alternative embodiments of the present invention, an anodic bond forming apparatus includes a first sheet of material that is fitted with at least one of controlled heating, voltage, and cooling as a first. A first bond-forming plate mechanism operable to impart to the material sheet, the second material sheet is fitted, and at least one of controlled heating, voltage and cooling is provided to the second material sheet. And a spacer mechanism having a plurality of movable assembly gap adjustment plates, coupled to the first bond forming plate mechanism and having a circumference of the first and second materials. Operate to move the assembly gap adjustment plate symmetrically between the first material sheet and the second material sheet toward the first and second material sheets to prevent mutual contact of the edges Possible spacer mechanism comprises a.

  According to one or more alternative embodiments of the present invention, the bond-forming plate mechanism (for use in forming anodic bonds of the first and second material sheets) includes first and second spaced-apart A base having a second surface, a thermal insulator supported by the second surface of the base and operable to impede heat transfer to the base, directly or indirectly coupled to the thermal insulator, and heat in response to power A heating disk that can be operated to generate heat, and is directly or indirectly coupled to the heating disk and operates to carry heat from the heating disk at least through the passage and to apply a voltage to the first material sheet. The heat and voltage applied to the first material sheet have their respective heating and voltage profiles To assist in the anodic bonding of the first and second sheet of material I.

  According to one or more alternative embodiments of the present invention, the bond-forming plate mechanism (for use in forming anodic bonds of the first and second material sheets) includes first and second spaced-apart A base having a second surface and a heating disk coupled directly or indirectly to the base and operable to generate heat in response to power, the heating disk providing an edge loss temperature compensation function The heat applied to the first material sheet follows a heating profile to assist in the anodic bond formation of the first and second material sheets.

  According to one or more alternative embodiments of the present invention, the bond-forming plate mechanism (for use in forming anodic bonds of the first and second material sheets) includes first and second spaced-apart A heating disk having a second surface and operable to generate heat in response to power, directly or indirectly coupled to the second surface of the heating disk, and from the heating disk to the first material sheet A heat spreader operable to carry at least heat through the passage and to apply a voltage, and a first material in heat flow with the first surface of the heating disk and via the heat spreader and the heating disk Heat and electricity applied to the first sheet of material having at least one cooling channel operable to carry a cooling fluid to remove heat from the sheet. Follows the respective heating and voltage profiles to assist in the anodic bonding of the first and second material sheets, and the cooling provided to the first material sheet is of the release layer bonded to the second material sheet, According to a cooling profile to aid separation from the first material layer.

  According to one or more alternative embodiments of the present invention, the bond-forming plate mechanism (for use in forming anodic bonds of the first and second material sheets) includes first and second spaced-apart A heating disk that is operable to generate heat in response to electrical power, supported by the base and thermally insulated from the base, having a second surface and an opening through the first and second surfaces. A heating disk having an opening extending through the heating disk, directly or indirectly coupled to the heating disk, carrying heat from the heating disk through at least a passage to the first material sheet and applying a junction forming voltage. A heat spreader capable of operating, the heat spreader having an opening through the heat spreader, and the base, heating disk and heat spreader. A preload plunger having an electrode projecting through an opening in a redder, wherein the electrode can act to electrically connect to the first material sheet when the first material sheet contacts the heat spreader A plunger.

  Other aspects, features, advantages, etc. will become apparent to those skilled in the art when the description of the invention herein is taken in conjunction with the accompanying drawings.

  For the purpose of illustrating the various aspects of the invention, there are shown in the drawings embodiments that are presently preferred, but it is to be understood that the invention is not limited to the precise arrangements and equipment shown.

  Referring to the drawings, wherein like reference numerals indicate like elements, a bonding apparatus 10 according to one or more embodiments of the present invention is shown in FIG. In this embodiment, the junction forming apparatus is an anode of two material sheets of SOI structure at a temperature higher than the conventional junction forming temperature, eg, higher than about 600 ° C., close to 1000 ° C. and / or above 1000 ° C. It is an integrated processing system that can perform bond formation (note that the bond formation apparatus 10 can also perform anodic bond formation at conventional temperatures). For purposes of explanation (not for limitation), an SOI structure is described herein as a workpiece that is suitable for the bond forming apparatus 10 to perform operations (eg, for forming an SOI structure). Also, for illustrative purposes (but not for purposes of limitation), certain SOI structures, discussed below as workpieces, bond a semiconductor donor wafer (such as a silicon wafer) to a glass (or glass-ceramic) substrate. A SOG structure formed by peeling a silicon layer from a silicon donor wafer such that the silicon layer remains bonded onto the glass substrate.

  The bonding forming apparatus 10 includes the following components: a lift-pressing mechanism 100, an opening / closing mechanism 200, a spacer mechanism 300, an upper bonding forming plate mechanism 400, and a lower bonding forming plate mechanism 500. These main components are connected to each other and the composite is supported by a base plate 12 and a support frame 14. A control unit (not shown), which can have one or more closed control loops, controls various elements of the junction forming apparatus 10 (eg, using a computer program), as will be discussed in more detail below. Can operate to control.

  Although the operation of the bond forming apparatus 10 and some specific bond forming processes are discussed in more detail later herein, an overview of such operations is presented here. In FIG. 1, the bond forming apparatus is in a closed arrangement where the upper bond forming plate mechanism 400 closely overlaps the lower bond forming plate mechanism 500. As shown in FIG. 2, the upper bond forming plate mechanism 400 rotates upward to allow insertion of two sheets of material to be bonded (eg, silicon donor wafer and glass substrate) into the apparatus 10. Thus, it can operate to move away from the lower bond forming plate mechanism 500. Again, for discussion purposes, it is assumed that the silicon donor wafer has a release layer that will be bonded to the glass substrate and later separated from the silicon donor wafer.

  In this example, it is assumed that during the bond formation process, the silicon donor wafer contacts the upper bond formation plate mechanism 400 and the glass substrate contacts the lower bond formation plate mechanism 500. For example, a silicon donor can be placed on the lower bond formation plate mechanism 500 such that the silicon donor wafer will be in contact with the upper bond formation plate mechanism 400 (when the apparatus 10 is closed). The wafer can be placed on a glass substrate (but it is natural that this arrangement can be reversed without departing from the scope of the various embodiments of the invention). In another embodiment, the silicon donor wafer can be coupled to the upper bond forming plate mechanism 400, for example, by a clip, chuck mechanism, vacuum, etc., when the upper bond forming plate mechanism 400 is in the open position.

  In general, the upper bonding plate mechanism 400 can be operated to provide the silicon donor wafer with at least one of controlled heating, voltage and cooling, while the lower bonding plate mechanism 500 is controlled heating, voltage and voltage. And at least one of the cooling can be operated to provide the glass substrate. The lift-press mechanism 100 is operatively coupled to the upper bond forming plate mechanism 400 and the lower bond forming plate mechanism 500 and is a silicon donor to the glass substrate along the respective surfaces (ie, interfaces) of the silicon donor wafer and the glass substrate. The upper bond forming plate mechanism 400 and the lower bond forming plate mechanism 500 can be operated to press each other to achieve a controlled pressure on the wafer. The control unit provides an upper bonding plate mechanism 400 and a lower bonding plate mechanism 500 and a lift-press mechanism for providing sufficient heating, voltage and pressure profiles to achieve anodic bonding between the silicon donor wafer and the glass substrate. It can operate to generate a control signal to 100. The control unit forcibly cools the upper bonding plate mechanism 400 and / or the lower bonding plate mechanism 500 to facilitate separation of the release layer from the silicon donor wafer after bonding. Alternatively, it can also operate to generate a control signal to the lower bond forming plate mechanism 500.

  As shown in FIG. 2, the upper bonding plate mechanism 400 rotates upward to move away from the lower bonding plate mechanism 500, and the silicon donor wafer and the glass substrate are separated from the upper bonding plate mechanism 400 and the lower bonding plate mechanism 500. After being inserted in between, the upper bonding plate mechanism 400 is rotated downward (by the opening / closing mechanism 200) so that the upper bonding plate mechanism 400 and the lower bonding plate mechanism 500 are spaced apart. be able to. Thus, if the silicon donor wafer is placed on a glass substrate, the top bond forming plate mechanism 400 will be separated from the silicon donor wafer. Alternatively, if the silicon donor wafer is coupled to the top bond forming plate mechanism 400 (eg, by the previously described clip, chuck, vacuum, etc.), the silicon donor wafer and glass substrate will be separated. When the latter approach is used, the silicon donor wafer and the glass substrate are individually heated to a specific temperature (which can be close to 1000 ° C. and / or above 1000 ° C.), over-bonded It can be initiated by a controlled power supply to each of the plate mechanism 400 and the lower bond forming plate mechanism 500. When the former method is used, individual heating can be started after the bonding apparatus 10 is completely closed.

  As shown in FIGS. 4A and 4B, under the controlled operation of the lift-press mechanism 100, the silicon donor wafer and the glass substrate can contact each other. The lift-press mechanism 100 pushes the lower bond forming plate mechanism 500 (and the glass substrate) to a position such that controlled heating and pressure can be achieved between the silicon donor wafer and the glass substrate. The silicon donor wafer and the glass substrate are subjected to a potential difference of about 1750 VDC applied by the upper bonding plate mechanism 400 and the lower bonding plate mechanism 500, respectively. The pressure, temperature difference and potential difference are applied over a controlled time. Thereafter, the voltage is returned to zero, the silicon donor wafer and the glass substrate are cooled (which can be forced cooling), and cooling initiates at least the separation of the release layer from the silicon donor wafer. It is unlikely that this will happen, but if the separation between the release layer and the silicon donor wafer is not complete in the cooling process, one or more mechanical or other to assist the release process The mechanism can be used.

  Each element of the bonding apparatus 10 will now be discussed in further detail. FIG. 5 is a partially exploded perspective view of the bonding apparatus. That is, specific components of the ascending-pressurizing mechanism 100, the opening / closing mechanism 200, the spacer mechanism 300, the upper bonding formation plate mechanism 400, and the lower bonding formation plate mechanism 500 can be easily distinguished.

  Still referring to FIG. 6, one embodiment of the lift-press mechanism 100 will now be discussed. The lift-press mechanism 100 is coupled to the lower bond formation plate mechanism 500 and is provided along the respective surfaces of the silicon donor wafer and the glass substrate to assist in the anodic bond formation of the silicon donor wafer and the glass substrate. To achieve a controlled pressure of the substrates against each other, the upper bond forming plate mechanism 400 and the lower bond forming plate mechanism 500 can be operated to press each other. In this embodiment, the lift-press mechanism 100 is the initial preload of the lower bond forming plate mechanism 500, (i) the upper bond forming plate mechanism 400 and the lower bond forming plate mechanism 500 (and therefore of the glass substrate and silicon donor wafer). A preloading action in which the lower bond forming plate mechanism 500 moves the glass substrate vertically toward the upper bond forming plate mechanism 400 to achieve position, and (ii) the glass substrate is moved to the silicon donor wafer at a controlled pressure. To allow two basic operations of pressure application operation to be pressed (which can also allow automatic alignment between the glass substrate and the silicon donor wafer for a substantially uniform pressure distribution) Can work.

  The ascending-pressurizing mechanism 100 includes a base 102, a first actuator 104, a second actuator 106, and a lower mount 108. Base 102 has an upper surface 110 and a lower surface 112. The first actuator 104 can be coupled to the lower surface 112 of the base 102, and the second actuator 106 can be coupled to the upper surface 110 of the base 102. The lower mount 108 is coupled to the second actuator 106 such that the second actuator 106 is sandwiched between the base 102 and the lower mount 108.

  The base 102 is slidable relative to a plurality of guide posts 114, 116, 118 (three guide posts are shown, but fewer or more guide posts can be used). By way of example, the base 102 can have respective guide bushes 120, 122, 124 (the guide bush 124 is not visible), and the guide columns 114, 116, 118 are guide rails 114, 116, 118, respectively. The guide bushes 120, 122, 124 are arranged coaxially so that they can slide in the axial direction within the 120, 122, 124. Each of the guide pillars 114, 116, and 118 can be fixed to the base plate 12 of the bonding apparatus 10 using a fastener 130.

  In accordance with one or more embodiments, the actuation of the first actuator 104 is responsible for initial preloading positioning of the upper bonding plate mechanism 400 and the lower bonding plate mechanism 500 (and thus the glass substrate and silicon donor wafer). In order to achieve the above, the above-described preload application operation in which the lower bonding plate mechanism 500 moves through the lower mount 108 toward the upper bonding plate mechanism 400 can be achieved. This preload application operation can be a rough displacement of the lower bonding plate mechanism 500 toward the upper bonding plate mechanism 400. The first actuator 104 and the second actuator 106 are provided to the lower joint forming plate mechanism 500 such that the operation of the first actuator 104 provides a coarse displacement of either the second actuator 106 or the lower joint forming plate mechanism 500. Axis can be fitted together.

  More specifically, the first actuator 104 can have a shaft 104A that can be operated to move the first actuator 104 up and down. The shaft 104A can be driven using any suitable mechanism, such as an electromechanical solenoid, a hydraulic piston mechanism, or the like. The vertical movement of the first actuator 104 can cause the corresponding base 102 to move, and the planar arrangement of the base 102 is guided when the guide columns 114, 116, 118 slide in the guide bushes 120, 122, 124. Maintained by pillars 114, 116, 118. As a result of the movement of the base 102, corresponding movements of the second actuator 106, the lower mount 108, and the lower joint forming plate mechanism 500 occur. The movement of the first actuator 104 by the shaft 104A can be limited mechanically, electrically, and / or hydraulically such that the preload application operation of the lower bond forming plate mechanism 500 is controlled. . As shown in FIG. 6, the limited movement is such that the distance D between each fastener 130 and the guide bushes 120, 122, 124 is substantially zero as shown in FIG. Compared with, it can be measured.

  The second actuator 106 of the ascending-pressurizing mechanism 100 can operate to provide a controllable force (for example, a fine movement compared to the coarse movement described above) to the lower bonding formation plate mechanism 500. The possible force is substantially perpendicular to the mounting surface (ie, the surface in contact with the glass substrate) of the lower bond forming plate mechanism 500. Since the mounting surface of the upper bonding formation plate mechanism 400 is parallel to the mounting surface of the lower bonding formation plate mechanism 500, the second actuator 106 of the ascending-pressing mechanism 100 scrapes between the silicon donor wafer and the glass substrate. Ensure that no (or only minimal) lateral forces are applied that could cause scratches or other obstacles to the quality of the anodic bond.

  The second actuator 106 may be a bellows actuator that can operate to move the lower mount 108 up and down in response to a change in the internal fluid pressure (for example, hydraulic pressure or gas pressure) of the bellows. The second actuator 106 can be controlled independently (relative to the first actuator 104) to achieve the pressure application operation described above in which the glass substrate is pressed against the silicon donor wafer. Careful control (eg, pressure in the bellows) of the second actuator 106 by the control unit to establish a pressure (in psi units (Pa units)) appropriate for anodic bonding between the glass substrate and the silicon donor wafer. Control). Further, if a bellows is used for the second actuator 106, the lower mount 108, the lower bonding plate mechanism 500 and the glass substrate are floated or automatically aligned with respect to the upper bonding plate mechanism 400 (and the silicon donor wafer). It becomes possible to do.

  The lift-press mechanism 100 can also have a plurality of mounting elements, such as an upward post 140 coupled to the lower mount 108. The mounting element 140 can serve to fit and hold the spacer mechanism 300 as will be discussed in more detail later in this description.

  As best shown in FIG. 5, the lift-press mechanism 100 may also have a position sensor 150 coupled to the lower mount 108 and / or the lower bond forming plate mechanism 500. The position sensor 150 is operable to provide an output signal to the control mechanism indicating how much the lower bond forming plate mechanism 500 has moved. For example, the output signal of the position sensor 150 can provide an indication of whether or not the coarse displacement described above (toward the upper bonding plate mechanism 400) of the lower bonding plate mechanism 500 has been performed. This indicator can give an indication of when to start heating, preload pressure, seed voltage application, and the like. Additionally or alternatively, the position sensor 150 signal can provide an indication of the velocity and / or acceleration of the lower bond forming plate mechanism 500. A person skilled in the art can calculate the position, velocity, acceleration, etc. of the lower bonding plate mechanism 500 based on one or more position measurements and time bases obtained from the output signal of the position sensor 150. Would admit. As an example, the position sensor can be implemented using a linear voltage variable differential transformer (LVDT) that provides an output signal that varies in amplitude as a function of the moving core of the transducer.

  Still referring to FIG. 7, one embodiment of the opening and closing mechanism 200 will now be discussed. In the present embodiment, the opening / closing mechanism 200 includes a collective lift 202, a collective actuator 204, a collective tilt mechanism 206, and a mount plate 208. The opening and closing mechanism 200 is coupled to an upper bond forming plate mechanism 400 (not shown in FIG. 7; see FIGS. 1 and 5), and (i) a lower toward the upper bond forming plate mechanism 400 when in a closed configuration. To assist in holding the upper bonding plate 400 in place relative to the lower bonding plate mechanism 500 such that movement of the bonding plate 500 achieves a controlled pressure of the silicon donor wafer relative to the glass substrate, and (ii ) The first operation separates the upper bonding plate mechanism 400 from the lower bonding plate mechanism 500 in a direction substantially perpendicular to the respective mounting planes of the lower bonding plate mechanism 500 and the upper bonding plate mechanism 400; 2, the mounting plane of the upper bonding plate mechanism 400 forms an oblique angle with respect to the mounting plane of the lower bonding forming plate mechanism 500. Sea urchin, away from the lower bonding plate mechanism 500 by tilting the upper bonding plate mechanism 400 may operate to provide a dual opening motion profile.

  With respect to the double-open motion profile, the assembly lift 202, the assembly actuator 204, the assembly tilt mechanism 206 and the mount plate 208 cooperate to (i) vertical movement of the mount plate 208 relative to the base plate 12, and (ii) the mount plate relative to the base plate 12. Two basic movements of the tilting movement that allow for upward rotation of the are achieved. The upper bond forming plate mechanism 400 can be operated to couple to the mount plate 208 and is rotated between the upper bond forming plate mechanism 400 and the lower bond forming plate mechanism 500 (as discussed above) by rotation of the mount plate 208. Enables access for the insertion of the silicon donor wafer and the glass substrate into the bond forming apparatus 10. The vertical movement of the mount plate 208 (and the upper bonding plate mechanism 400) allows an initial separation movement between the upper bonding plate mechanism 400 and the lower bonding plate mechanism 500 that is substantially purely vertical. . This allows for separation without lateral scratching that could otherwise damage the SOG structure. These features are discussed in further detail below.

  The assembly lift 202 has a base 210, a guide shaft 212 and a guide bush 214. The base 210 can serve to couple directly or indirectly to the base plate 12 and provide a high stiffness reference from which lift and tilt movements can be initiated. The guide shaft 212 is operably coupled to the base 210 and extends vertically toward the assembly tilt mechanism 206 and the mount plate 208. Guide bushing 214 can serve to slide fit guide shaft 212. As discussed in more detail below, the sliding motion of the guide bushing 214 relative to the guide shaft 212 causes the mount plate 208 to move vertically and rotationally. The guide bushing 214 has a fastening plate 216 that can serve to allow mechanical connection to the assembly actuator 204.

  The integrated actuator 204 also applies a vertical force to the fastening plate 216 of the guide bush 214 so that a controlled slip of the guide bush 214 is achieved in order to obtain a rising and tilting movement of the mount plate 208. Can work. In one embodiment, the integrated actuator 204 includes a jack 230, such as a Duff-Norton jack, a shaft 232 coupled to the jack 230, and a coupling element 234 connected to the fastening plate 212 of the guide bush 214. Can have. In one or more embodiments, the duff-Norton jack 230 can operate such that application of rotational force to the shaft 236 causes vertical movement of the shaft 232, and thus vertical movement of the guide bushing 214. The operation of the jack 230 can be controlled by the control unit, such as by using an electric motor to rotate the shaft 236.

  The mount plate 208 can have a first end 240 that can serve to mate the upper bond forming plate mechanism 400 and a second end 242 that is operatively coupled to the assembled tilt mechanism 206. . In this embodiment, the assembly tilt mechanism 206 has a hinge plate 250 that couples the mount plate 208 to the assembly lift 202 (discussed in more detail below). The assembled tilt mechanism 206 also includes a first stop arm 252, a second stop arm 254, and an axis pivot link mechanism 258 of the hinge plate 250 to the mount plate 208. Stop arms 252 and 254 are coupled to the base plate 12 at respective first ends and to the mount plate 208 at respective second ends. The stop arms 252 and 254 are blocked at the first end so that their respective vertical movements (relative to the base plate 12) are prevented, but a second end pivoting movement about the first end is allowed. The base plate 12 can be coupled in a rotatable manner. Each stop arm 252, 254 has a slot 256 that extends horizontally from the second end 242 of the mount plate 208 and can serve to receive a corresponding roller or pin 244.

  Mount plate 208 is operably coupled to hinge plate 250 by pivot pivot link mechanism 258. More particularly, the hinge plate 250 includes a block 260 that extends at least partially into the opening 245 of the mount plate 208. The pivoting link mechanism 258 enables the mount plate 208 to rotate, that is, pivot, about the pivoting link mechanism 258. The opening 245 can be sized and shaped such that the block 260 can rotate within the opening 245 without obstruction.

  In response to actuation of the jack 230 (eg, by application of rotational force to the shaft 236), the shaft 232 can raise / lower the guide bushing 214. In the illustrated arrangement, the guide bushing 214 rises in response to the actuation described above, thus providing a vertical (upward) motion to the hinge plate 250. In response, the hinge plate 250 applies a vertical force to the mount plate 208 via the block 260 and the pivot axis linkage 258. Obviously, the mounting plate 208 remains substantially parallel through substantially all of the limited travel of the upper joint forming plate mechanism 400 during the upward movement of the mounting plane of the upper joint forming plate mechanism 400 and the lower joint forming plate mechanism 500. The motion by the block 260 is performed in such a manner.

  The vertical force applied to the mount plate 208 by the hinge plate 250 causes the mount plate 208 rollers or pins 244 to move upward within the respective slots 256 of the respective stop arms 252, 254. Thus, the mount plate 208 will rise vertically away from the base plate 12 while maintaining a substantially parallel relationship to the base plate 12. Vertical upward movement (i.e., elevation) while maintaining a substantially parallel arrangement with respect to the base plate 12 may occur during a limited stroke, i.e., until the roller or pin 244 of the mount plate 208 contacts the upper limit in the slot 256. Will continue. When the roller or pin 244 reaches this upper limit, the continuous upward force applied by the block 260 to the mount plate 208 is the first end of the mount plate 208 that is responsive to rotational movement about the pivot axis linkage 258. (In order to take into account the lateral movement of the mount plate 208 in response to pivoting about the pivot axis linkage 258 about the first end of each of the stop arms 252 and 254 as an axis. A slight swivel motion is allowed). The magnitude of the inclination of the mount plate 208 can be adjusted using a stop 257 disposed at the end of each stop arm 252, 254. As an example, the stop 257 can have a threaded rod and nut, which can be turned into and out of the associated slot 256 by a variable amount. This adjustment within the effective length of the slot 256 allows a change in the allowable travel of the roller or pin 244 and the amount of tilt of the mount plate 208.

  Reversing actuation of the assembly actuator 204 causes a downward tilt of the mount plate 208 to a position substantially parallel to the base plate 12, and subsequently the mount plate 208 maintains a substantially parallel relationship with the base plate 12. A downward movement occurs in the vertical direction. The parallel placement of the mount plate 208 can be adjusted by one or more stops 259 of the hinge plate 250. For example, the stop 259 can have a screw bolt that can be rotated into and out of the hinge plate 250 to provide an adjustable rest position for the mount plate 208.

  The first end 240 of the mount plate 208 also has a plurality of locks 246 that can serve to fit and couple to the upper ends 114A, 116A, 118A of the guide posts 114, 116, 118 of the lift-press mechanism 100. Preferably (see FIG. 6). As an example, the lock 246 can be implemented using a screw bolt that can be manually operated. When the mount plate 208 is lowered to the position shown in FIGS. 4A and 4B, the mount plate 208 is mounted on the silicon donor wafer and the top bond formation plate mechanism without applying excessive force to the assembly lift 202, assembly actuator 204 or assembly tilt mechanism 206. Ensure that it can counter upward pressure on 400.

  The first end 240 of the mount plate 208 also has a plurality of openings through which various wires, cables and conduits can pass, as will be discussed in more detail below.

  Reference is now made to FIGS. 8A and 8B, which provide further details regarding the top bond forming plate mechanism 400. FIG. 8A is a perspective view of the upper bonding formation plate mechanism 400, and FIG. 8B is a cross-sectional view of the upper bonding formation plate mechanism 400. It is noted that due to the symmetry of the bond forming device 10, the functional and / or structural details of the upper bond forming plate mechanism 400 can be easily applied to the lower bond forming plate mechanism 500 (as discussed below). I want.

  Major components of the upper bonding plate mechanism 400 include a base 402, an insulator 404, a back plate 406, a heating disk 408 and a heat spreader 410. The main functions of the upper bonding plate mechanism 400 include heating the silicon donor wafer, applying pressure to the silicon donor wafer, applying potential to the silicon donor wafer, and cooling the silicon donor wafer.

  The heating function is based on the heating disk 408 and can operate to provide a temperature that is above or below about 600 ° C. and can approach or exceed 1000 ° C. This embodiment of the top bond forming plate mechanism 400 can also operate to provide thermal uniformity within a range of ± 0.5% of the controlled set temperature over substantially the entire surface of the silicon donor wafer. .

The pressure applied to the silicon donor wafer by the upper bond forming plate mechanism 400 is distributed substantially evenly across the wafer by the heat spreader 410, which causes the upward force exerted by the glass substrate (provided by the lower bond forming plate mechanism 500). Give reaction force to. As a result, a pressure profile suitable for anodic bonding formation at the interface between the silicon donor wafer and the glass substrate is obtained. By controlling the upward pressure provided by the lower bond forming plate mechanism 500 (eg, under the control of a control unit), the pressure profile is about 1 pound per square inch (psi) to 100 psi (about 6.9 × 10 ^{3 to} 6.9 × 10 ⁵ Pa). A low side pressure (eg, about 20 psi (about 1.4 × 10 ⁴ Pa)) of about 10-50 psi (about 6.9 × 10 ^{4 to} 3.4 × 10 ⁵ Pa) is applied to the silicon donor wafer or glass substrate. It would be advantageous because it would be difficult to generate cracks.

  As discussed above, a potential difference of about 1750 VDC is applied to the silicon donor wafer and the glass substrate, and this potential difference is applied by each of the upper and lower bond forming plate mechanisms 400 and 500. This potential difference can be either (i) applying a potential to one of the silicon donor wafer and the glass substrate (the other being grounded) or (ii) both the silicon donor wafer and the glass substrate (positive potential for the silicon donor wafer respectively). Note that this can be achieved by applying a potential (such as a negative potential) to the glass substrate. That is, the capability of the upper bonding plate mechanism 400 that can apply a potential (other than ground) to the silicon donor wafer is a feature that is provided as necessary. If the upper bond forming plate mechanism 400 provides a bond forming potential (other than ground) to the silicon donor wafer, such a potential can be distributed substantially uniformly across the entire surface of the wafer by the heat spreader 410. .

  It should be noted that the present invention is not limited to any operating principle, but there may be a general relationship between junction formation voltage, temperature, time and financial characteristics. For example, as the junction formation voltage decreases, the temperature, time, and / or the amount of conductive ions (eg, of the glass substrate) can be increased to at least tend to the same junction formation result. This relationship is similarly established when temperature, time and / or the amount of conductive ions are independent variables. The junction formation potential difference between the silicon donor wafer and the glass substrate can range from about 100 VDC (or less) to about 2000 VDC (or more) using peak, average, RMS or other conventional measurement formats. Can be measured. For some types of glass substrates, junction formation voltages in the range of about 1000 VDC to about 2000 VDC are suitable.

  If forced cooling of the silicon donor wafer is desired, such cooling can be achieved using a controlled fluid flow through the top bond plate mechanism 400. These and other features of the top bond forming plate mechanism are discussed in further detail below.

  The base 402 of the upper bonding plate mechanism 400 has a substantially cylindrical structure and defines an internal space for receiving the insulator 404. As an example, the base 402 can be formed of a machinable glass-ceramic (eg, MACOR) that provides both structural integrity and heat resistance. Additionally or alternatively, other suitable materials can be used to form the base 402. The insulator 404 can serve to limit or prevent heat flow from the heating disk 408 to the base 402 (and other parts of the bonding apparatus 10). As an example, the insulator 404 can be formed of a ceramic cellular thermal insulation material, such as 40% low density quartz glass. Additionally or alternatively, other suitable insulation materials can be used. Insulator 404 should provide significant thermal insulation capability as long as the heating disk can be operated to achieve temperatures such as 600 ° C or higher, approaching or exceeding 1000 ° C. If significant heat can flow through the base 402 due to inadequate insulation, catastrophic results can occur with respect to proper operation of other parts of the bonding apparatus 10. Further, the relatively high thermal insulation between the base 402 and the heating disk 408 ensures that the thermal inertia of the upper bond forming plate mechanism 400 is relatively low, and the low thermal inertia helps to achieve fast thermal cycling capability.

  The back plate 406 is insulated from the base 402 by the insulator 404. The backplate 406 serves to provide at least one cooling channel 420 through which cooling fluid can flow when it is desirable to force the temperature of the SOG structure, particularly the silicon donor wafer, to drop. Can do. As an example, the backplate 406 may be formed of hot pressed boron nitride (HBN) to withstand high temperatures and relatively fast temperature changes (such as when cooling fluid is channeled into the channel 420). it can. Additionally or alternatively, other suitable materials can be used to form the backplate 406. At least one inflow tube 422 can serve to flow cooling fluid into the channel 420 and is not visible in FIG. 8B but can be seen in FIG. 11B as discussed below, at least one outflow tube. 424 can serve to remove cooling fluid from channel 420. A heat exchanger (not shown) can be used to cool the cooling fluid before it flows back into the inlet tube 422.

  Forced cooling can be achieved by controlling the temperature and flow rate of the cooling fluid flowing through the channel 420 using a control unit. For example, the cooling profile of the top bonding plate mechanism 400 may be aggressive (eg, by a control unit) to provide the silicon donor wafer with at least one of various cooling rates and various cooling levels (eg, residence time). Can be controlled. It is believed that better separation of the release layer from the silicon donor wafer is facilitated by providing different cooling profiles for the silicon donor wafer and the glass substrate. In particular, the forced cooling function of the upper bonding plate mechanism 400 is due to the different bonding profiles between the silicon donor wafer and the glass substrate (as discussed in more detail below) by the lower bonding plate mechanism 500 (silicon donor Since it can be achieved by forced cooling of the glass substrate (not the wafer), it is provided as needed.

  The cap ring 426 (see FIG. 8B) may serve to maintain the insulator 404 in place within the base 402 and also to provide a recess in which the heating disk 408 can be placed. it can. Cap ring 426 may be formed of a machinable glass-ceramic (such as MACOR described above).

  The heating disk 408 can be operated to generate heat in response to electrical (voltage and current) heating, and the electrical potential applied to the silicon donor wafer is not applied to the backplate 406 or base 402. Also has insulation properties. In practice, the relatively high potential applied should be limited to the silicon donor wafer. Accordingly, the heating disk 408 can be formed of a material that exhibits significant electrical insulation properties and significant thermal conductivity. One such material that is suitable is pyrolytic boron nitride (PBN).

  Referring to FIGS. 9A and 9B, two examples of heating disk structures suitable for implementation of the heating disk 408 are shown. 9A is a perspective view of the first heating disk 408A, and FIG. 9B is a perspective view of another second heating disk 408B. Since substantially uniform heating is desired, the heating discs 408A, 408B are capable of handling edge heat so that the outer portion of the heating discs 408A, 408B can cope with a tendency to be cooler than the central portion of the heating discs 408A, 408B. Can have loss compensation. In the illustrated embodiment, the edge heat loss compensation of the heating disks 408A, 408B is accomplished using two heating zones, one in the form of an annulus surrounding one in the center and the other in the middle. Can be achieved. These heating zones can be implemented using respective heating elements.

  The heating disk 408A of FIG. 9A has two individual heating elements 409A and 409B, the heating element 409B being disposed substantially in the center, and the heating element 409A is in the form of a ring surrounding the heating element 409B. The heating elements 409A and 409B each have a pair of terminals 411A and 411B that can be connected to respective power sources. The application of voltage and current from each power source to the heating elements 408A and 409B of the heating disk 408A allows the temperature of each of the two heating zones to be adjusted individually, so that edge heat loss compensation can be achieved. Can be controlled individually.

  The heating elements 409A and 409B can be formed of pyrolytic graphite (PG), THERMOFOIL, or the like. The THERMOFOIL material is a thin, flexible material with heating characteristics that has an etched foil resistance element sandwiched between flexible insulating layers. Although THERMOFOIL may exhibit better reliability in a vacuum environment, it is contemplated herein for use in non-vacuum environments (which may contain one or more oxidants, such as atmospheric environments). In a non-vacuum atmosphere, the heating elements 409A and 409B can be formed of Inconel including a high-strength austenitic nickel-chromium-iron alloy group having excellent corrosion resistance and heat resistance.

  In one or more embodiments, the heating elements 409A and 409B can be offset in the vertical direction to assist in edge heat loss compensation. For example, the heating element 409B in the central area can be arranged toward the bottom surface side of the heating disk 408A, and the heating element 409A in the annular area is arranged on the upper surface side or the upper surface side of the heating disk 408A. Can do. Thereby, the thermal resistance between the heating element 409A and the silicon donor wafer at the periphery of the heating disk 408A is smaller than the thermal resistance between the heating element 409B and the silicon donor wafer at the center of the heating disk 408A. The offset structure can be achieved, for example, by sandwiching a spacer element (not shown), for example, a sheet material, between the heating elements 409A and 409B. As a result, the terminal 411B can be pulled out in the horizontal direction instead of being pulled out downward as shown in FIG. 9A.

  The heating disk 408B of FIG. 9B has integrally formed continuous heating elements that operate as if having individual heating elements 409C, 409D. Specifically, the width (and / or thickness) of the resistive material used to form the heating element is varied depending on the position within the heating disk 408B. For example, the width of the heating element at the peripheral position 409C is narrower than the width of the heating element at the central position 409D. Changing the width of the heating element changes the resistance of the heating element (and hence the heating characteristics) as a function of position. By changing the resistance of the integral heating element as a function of position from the central region of the heating disk 408B, only one set of voltage and current is required to achieve edge heat loss compensation. In practice, the change in resistance of the heating element in regions 409C and 409D will cause the integral heating element to react (heat) in a different manner in response to applied voltage and current.

  Regardless of the configuration of the heating element, the resistance of the heating element can be about 10-20Ω (eg, about 15Ω). To achieve the heating level of about 600 ° C. to 1000 ° C. described above, a voltage of about 200 V (AC) can be applied across the heating element, resulting in a heat dissipation of about 3250 W RMS.

  In one or more embodiments, the heating disk 408 exhibits a relatively low thermal inertia due, at least in part, to material and configuration choices. The heating disk can be measured to be 2 mm thick using the materials and configurations discussed in detail above. The relatively thin thickness contributes to lower heat capacity and thermal inertia (compared to conventional heating elements of about 1 to 2 inches thick), which helps achieve fast thermal cycling capability. .

  The heat spreader 410 is in heat flow with the heating disk 408 and can serve to integrate the heating profile provided by the heating disk 408 so that a more uniform heat supply is provided to the silicon donor wafer. The heat spreader 410 can be electrically and thermally conductive to directly contact the silicon donor wafer to facilitate heating of the wafer and application of the aforementioned high voltage to the wafer.

  Of the materials that can be used to implement the heat spreader 410, conductive graphite, such as THERMOFOIL, is desirable. In a non-vacuum atmosphere (eg, in air), the heat spreader 410 can exhibit better reliability in an oxidizing environment, non-oxidizing electrical conducting-thermal conducting elements (electroless plated nickel, platinum, Copper with a non-oxidizing coating (such as molybdenum, tantalum, etc.), THERMOFOIL with a non-oxidizing coating (such as electroless plated nickel, platinum, molybdenum, tantalum, etc.) It can be formed of other materials such as silicon carbide (which can be left uncoated), Kevlar with a metal coating (such as electroless plated nickel, platinum, molybdenum, tantalum, etc.).

  In one or more embodiments, the heat spreader 410 also exhibits a relatively low thermal inertia, again at least in part due to material and configuration choices. The heat spreader 410 can be measured approximately 0.5-6 mm thick using the materials and configurations discussed in detail above.

  The relatively thin thickness of the heating disk 408 and the heat spreader 410, coupled with the high thermal insulation properties exhibited by the insulator 404 and other material choices discussed above, contributes to the very low heat capacity and thermal inertia of the upper bonding plate mechanism 400. Contribute. That is, the upper bonding plate mechanism 400 can heat the material sheet from room temperature to about 1000 ° C. in about 2 minutes, and cool the material sheet heated to about 1000 ° C. to room temperature in about 10 minutes to a shorter time. be able to. This is a conventional substrate heater, which can take about 30 minutes to 1 hour to raise the temperature of the material sheet from room temperature to only about 600 ° C. and can take about 20 minutes to cool the material sheet at about 600 ° C. to room temperature. Is not a comparison.

  The control unit can operate to program the top bond forming plate mechanism 400 to follow any desired ramp heating profile or ramp cooling profile and residence time at any desired processing temperature.

  As shown in FIG. 8A, the upper bond forming plate mechanism 400 may have an opening 450 that allows access to the wafer during the bond forming process, for example, to apply a preload voltage to the silicon donor wafer. it can. This optional feature is discussed in more detail below in this description.

  FIG. 10 shows an exploded view of the upper bond forming plate mechanism 400 (excluding the base 402 and the insulator 404). As shown in this exploded view, the upper bond forming plate mechanism 400 is a multi-layer assembly including a support ring 430, a gasket 432, a back plate 406, a gasket 434, a heating disk 408 and a heat spreader 410. Support ring 430 provides support for back plate 406 and gasket 432. The back plate 406 is sandwiched between the gasket 432 and the gasket 434 to prevent leakage of the cooling fluid as it flows through the channel 420. Of the materials from which gaskets 432 and 434 can be formed, GRAFOIL rings are desirable because they exhibit suitable sealing and heat resistance characteristics. A heating disk 408 overlies the gasket 434 and a heat spreader 410 is disposed on the heating disk 408. The respective layers of the top bond forming plate mechanism 400 can be coupled together using bolts.

  In one or more embodiments, the backplate 406 can have one continuous channel 420 or multiple independent channels 420. As shown in FIG. 10, the backplate 406 includes two independent channels 420 that each receive cooling fluid through respective inlets 406A, 406B and discharge cooling fluid through a common outlet 406C. Have. The dual cooling channel 420 ensures a more even cooling in the heat spreader 410 (and hence the silicon donor wafer) plane.

  In particular, the heat spreader 410 has a plurality of fins 436 that extend radially outward from the periphery of the heat spreader 410. Fins 436 provide a peripheral surface that is used to maintain heat spreader 410 in place and to provide a connection to a high voltage source. As best shown in FIG. 8B, fins 436 are fitted into respective retaining clips 440 to secure heat spreader 410. The retaining clip 440 is preferably formed of a machinable glass-ceramic (eg, MACOR) to provide electrical insulation and excellent structural integrity.

  As discussed above, the top bond forming plate mechanism 400 has openings 450 that can be implemented by individual openings 450 in the base 402, insulator 404, back plate 406, heating disk 408 and heat spreader 410, as desired. be able to. The opening 450 can be centrally located to provide access to a central region of the silicon donor wafer (eg, the center of the wafer). Applications for accessing a silicon donor wafer provided by opening 450 are discussed in further detail below.

  Reference is now made to FIGS. 11A, 11B and 11C, which further illustrate the structural and functional aspects of the top bond forming plate mechanism 400. FIG. 11B and 11C are cross-sectional views taken along lines 11B-11B and 11C-11C of FIG. 11A, respectively. As best shown in FIG. 11C, heating voltage and current can be applied to the heating disk 408 by terminals 452, which extend through the base 402, insulator 404, and backplate 406. The number of terminals 452 will depend on how many heating elements are used in the heating disk 408 and how the heating elements are implemented. As discussed above, in one or more embodiments, in order to allow independent control by the heating voltage and current control unit so that the temperature of the two heating zones can be precisely adjusted, A heating element can be used. Alternatively, the heating elements can be integrated (using variable resistance) so that a single heating voltage can be used for temperature regulation and edge heat loss compensation.

  As best shown in FIG. 11B, each fluid coupling 460 is connected to an inflow tube 422 and an outflow tube 424 to allow connection of a fluid source (not shown) to the upper bonding plate mechanism 400. can do. In particular, the inflow tube 422 and the outflow tube 424 extend sufficiently away from the base 402 so as to pass through the opening of the mount plate 208.

  As best shown in FIGS. 11B and 11C, a high voltage terminal that projects a relatively high voltage (eg, compared to the heater voltage) through base 402, insulator 404, backplate 406 and heating disk 408. 453 can be applied to the heat spreader 410. As discussed above, the voltage applied to the heat spreader 410 (which can range from about 1000 to 2000 VDC) is used to assist in the anodic bonding of the silicon donor wafer to the glass substrate.

  Although not shown, the upper bond forming plate mechanism 400 may have one or more vacuum conduits that extend through the base 402, insulator 404, back plate 406 and heating disk 408 to the heat spreader 410. If used, the silicon donor wafer would be bonded to the heat spreader 410 when the upper bonding plate mechanism 400 is in the upwardly rotated (open) position as shown in FIG. A vacuum conduit enables application of a vacuum to the wafer when the wafer is brought into close contact with the heat spreader 410. Application of the vacuum can be accomplished using a conventional vacuum source (not shown) that is controlled by the control unit or manually by the operator of the bond forming apparatus 10.

  As discussed above, the top bond formation plate mechanism 400 can optionally have an opening 450 to allow access to the silicon donor wafer during the bond formation process. When aperture 450 is used, its preferred use is to allow for the application of preload pressure and / or seed voltage to the silicon donor wafer prior to application of the junction formation voltage. The purpose of the preload pressure and seed voltage is to initiate anodic bond formation at a local region of the interface between the silicon donor wafer and the glass substrate prior to application of the bond forming voltage, thereby extending substantially across the interface. Anodic bonding is facilitated. The seed voltage can be the same or different magnitude as the junction formation voltage, but is considered to be superior to a voltage that is lower or equal, eg, about 750-1000 VDC. The opening 450 can be centrally located such that the initial anodic bond formation occurs at or near the central region of the interface between the silicon donor wafer and the glass substrate.

  Reference is now made to FIGS. 12A, 12B, and 13, which illustrate instruments suitable for achieving the preload pressure and seed voltage functions described above. FIG. 12A shows a side view of a preload plunger 470 that fits into the top bond forming plate mechanism 400 and can serve to mechanically and electrically contact the silicon donor wafer through its opening 450. . 12B is a cross-sectional view of the preload plunger 470 of FIG. 12A and FIG. 13 shows an upper bond forming plate mechanism 400 and a lower bond forming plate mechanism 500 that includes a preload plunger 470 coupled to the upper bond forming plate mechanism 400. FIG. Preload plunger 470 has a housing 472 having a proximal end 474 and a distal end 476. An electrical terminal 478 is disposed at the proximal end 474 of the housing 472 and provides a means for connecting a power source from which a seed voltage is obtained. A portion of the plunger 480 is disposed within the housing 472 and the plunger 480 protrudes through the distal end 476 of the housing 472. Plunger 480 can slide within housing 472 in the same manner as a telescope. Plunger 480 has a stop 482 at one end to prevent plunger 480 from passing completely through distal end 476 and falling out of housing 472. Electrode 484 is coaxially disposed within plunger 480 and tip 486 of electrode 484 protrudes beyond the distal end of plunger 480 (tip 486 contacts the silicon donor wafer, as will be discussed in more detail below).

  A first compression spring 488 mechanically and electrically couples electrode 484 and terminal 478 so that sliding of plunger 480 does not impede electrical contact between terminal 478 and electrode 484. The first compression spring 488 also pushes or shifts the electrode 484 (and the plunger 480) such that the stop 482 contacts the housing 472. The second compression spring 490 also pushes the plunger 480 so that the stop 482 contacts the housing 472 and shifts the plunger 480 and the electrode 484 to the protruding position. The axial force on electrode 484 and plunger 480 is caused by compression springs 488 and 490, respectively, such that tip 486 of electrode 484 is displaced toward the silicon donor wafer and maintains electrical contact with the wafer. Absorbed. In this way, electrode 484 delivers a seed voltage to the silicon donor wafer. In one or more embodiments, the electrode 484 is also displaced toward the silicon donor wafer, the plunger 480 itself, so as to apply a preload pressure to the wafer (alone or in combination with the electrode 484). In addition, the plunger 480 can be slid.

  In a preferred embodiment, the tip 486 of the electrode 484 is shown when the lift-pressurization mechanism 100 has coarsely displaced the lower bond forming plate mechanism 500 toward the upper bond forming plate mechanism 400 (ie, shown in FIGS. 4A-4B). As shown, before the junction forming apparatus 10 is completely closed), the top 486 protrudes under the heat spreader 410 of the upper junction formation plate mechanism 400 so that the tip 486 contacts the silicon donor wafer. In this way, anodic bonding of the silicon donor wafer and the glass substrate can be initiated by application of preload pressure and seed voltage before full pressure, temperature and voltage are applied.

  Similar to the application of the junction formation voltage to the silicon donor wafer and the glass substrate, the seed voltage applies (i) a potential to one of the silicon donor wafer and the glass substrate (the other is grounded), or (ii) silicon. This can be achieved by applying respective potentials to both the donor wafer and the glass substrate. That is, even when initial bonding formation in a local region at the interface between the silicon donor wafer and the glass substrate is desired, the ability to apply a seed voltage to the silicon donor wafer of the upper bonding plate mechanism 400 is necessary. This is a function provided accordingly. In fact, as discussed later in this description, the seed voltage can be applied to the glass substrate by the lower junction plate mechanism 500 (with the silicon donor wafer grounded).

  A preload pressure and seed voltage can be applied as discussed above, but to limit the area where pre-bonding can be made, the silicon donor wafer and It is desirable to limit the contact area of the glass substrate. In this regard, the spacer mechanism 300 can be used in combination with the preload plunger 470 described above. In general, the spacer mechanism 300 is coupled to the lower bond forming plate mechanism 500 (see FIGS. 1 and 5), and the silicon donor wafer and glass substrate when the prebond formation is accomplished in the central region of the silicon donor wafer and glass substrate. It can serve to prevent peripheral contact with each other. After the pre-bond formation is achieved, the spacer mechanism 300 brings the silicon donor wafer and the glass substrate into contact with each other (including the periphery of the silicon donor wafer and the glass substrate) to proceed with the entire bond formation process.

  Reference is now made to FIG. 14, which is a perspective view of the spacer mechanism 300. The spacer mechanism 300 can serve to mechanically assist the mutual separation and retention of the peripheral region of the silicon donor wafer and the peripheral region of the glass substrate during application of the preload pressure and seed voltage. In one or more embodiments, the spacer mechanism 300 can serve to provide a symmetrical (multi-position) gap adjustment between the silicon donor wafer and the glass substrate.

  The spacer mechanism 300 has a substantially annular structure, and includes a mount ring 302, a rotation ring 304, and a plurality of assembly gap adjusting parts 306. Mount ring 302 has a substantially annular configuration with a central opening 308 and a peripheral edge 310. A plurality of mounting elements 312 (such as apertures) are disposed around the periphery 310 and have a complementary configuration to the mounting elements 140 that can be the upward posts 140 (see FIGS. 1, 5 and 6). The dimensions, shape and position of the mounting elements 140 and 312 are defined so that the mounting ring 302 can be coupled to the lower mount 108 of the lift-press mechanism 100. In the illustrated embodiment, the mount ring 302 cannot rotate relative to the lower mount 108 of the lift-press mechanism 100.

  The rotating ring 304 also has a substantially annular structure and further defines a central opening 308. The rotation ring 304 is rotatably coupled to the mount ring 302 and thus can rotate relative to the mount ring 302 and the lower mount 108 of the lift-press mechanism 100. The rotating ring 304 has a plurality of cams 320 (eg, cam slots) disposed on the periphery of the rotating ring 304, and one such cam 320 can be provided for each of the assembly gap adjustment components 306. One of the cams 320 is a geared cam 320A having a plurality of teeth whose pitch corresponds to the gear 142 of the stepping motor 144 (see FIG. 6) of the lift-pressurization mechanism 100. As the step motor 144 rotates the gear 142, the rotating ring 304 rotates relative to the mount ring 302 and the lower mount 108 of the lift-press mechanism 100. In order to obtain an accurate rotational movement of the rotating ring 304, the control unit can provide a drive signal to the step motor 144.

  Each assembly gap adjustment component 306 may have a gap adjustment plate 330 coupled to the slide block 332. The gap adjusting plate 330 fits between the silicon donor wafer and the glass substrate and is sized and shaped to separate the silicon donor wafer and the glass substrate. The gap adjusting plate can operate to achieve radial inward and outward movement relative to the central region of the spacer mechanism 300 (and thus the central region of the interface between the silicon donor wafer and the glass substrate). This radial movement is achieved by a slidable fit between the slide block 332 and the mount ring 302. For example, each assembly gap adjustment component can have one or more guide bushings 334 that slidably engage with corresponding one or more pins 336. The pin 336 may extend radially from the peripheral edge 310 of the mount ring 302 such that the sliding motion along the pin 336 of the guide bush 334 results in the aforementioned radial movement of the slide block 332 and the gap adjustment plate 330. it can.

  Each slide block 332 also has a cam guide (not visible in the figure), such as a roller or a pin, that fits into a respective cam slot 320. The rotation of the rotating ring 304 (by actuation of the step motor 144) causes each slide block 332 to slide in a controlled manner along the pin 336 (via the guide bushing 334). Apply radial force. In this way, all gap adjustment plates 330 move in a symmetrical motion that prevents any non-uniform frictional loading between the silicon donor wafer and the glass substrate. Note that rotation of the rotating ring 304 can also be achieved using other actuation means such as air cylinders, linear motors, integrated solenoids, and the like. The gap adjusting plate 330 is preferably electrically insulated so that the potential applied to the SOG is not transmitted to the mount ring 302 and other parts of the bonding apparatus 10. For example, the slide block 332 can be formed of a ceramic material. The mount ring 302 and the rotating ring 304 can be placed below the high heat zone of the lower bonding plate mechanism 500, which protects the mounting ring 302 and the rotating ring 304 from excessive heat input.

  As best seen in FIG. 11A, the top bond forming plate mechanism 400 may have one or more additional openings to allow access to the heating disk 408. As an example, the first opening 454 provides a temperature feedback signal (allowing precise temperature adjustment of the heating disk 408 and the silicon donor wafer) to the control unit as a thermocouple is thermally coupled to the heating disk 408. As can be done, a thermocouple can be inserted through the upper bonding plate mechanism 400. Note that the opening 454 extends from the back side of the upper bonding plate mechanism 400 as seen in FIG. 11A and is therefore shown in dashed lines. It is also possible to have a second opening 456 (also from the back) that provides another access to the heating disk 408 for another temperature control. In particular, the first opening 454 is disposed in the region of the central heating element of the heating disk 408 and the second opening 456 is disposed in or near the region of the annular heating element of the heating disk 408. This allows independent feedback and control of the power signal to each of the central heating element and the annular heating element (unless the central heating element and the annular heating element are integrally formed), thus also providing edge thermal effect compensation. Overall temperature control is also possible.

  FIG. 15 is a perspective view of an integrated thermocouple 494 that can be extended through openings 454 and 456 and used to contact the heating disk 408. The assembled thermocouple 494 includes a standard thermocouple plug 495, an assembled spring part 496 and a probe 498. The probe 498 is pushed by the spring assembly 496 in an operable manner so that the probe 498 is pressed against the heating disk 408, thus ensuring proper heat conduction between the probe 498 and the heating disk 408.

  Details of the structure of one or more embodiments of the lower bonding plate mechanism 500 will now be discussed. The main functions of the lower bonding plate mechanism 500 are complementary to the main functions of the upper bonding plate mechanism 400, that is, heating the glass substrate, applying a pressure to the glass substrate, applying a potential to the glass substrate, and cooling the glass substrate. .

  In accordance with one or more embodiments, the lower bond forming plate mechanism 500 can have any number of features of the upper bond forming plate mechanism 400 embodiment described above. For example, in the embodiment shown in FIG. 13, the upper bond forming plate mechanism 400 and the lower bond forming plate mechanism 500 use an opening 450 and a preload plunger 470 in the upper bond forming plate mechanism 400, while the lower bond forming plate It is substantially the same except that it is not used in mechanism 500.

  The heating function of the lower bonding plate mechanism 500 can operate to provide a temperature below or above about 600 ° C., and the temperature can approach or exceed 1000 ° C. The lower bond forming plate mechanism 500 can operate to provide temperature uniformity within a range of ± 0.5% of the controlled set temperature over substantially the entire surface of the glass substrate. If desired, a potential (approximately 1750 VDC) can be applied to the glass substrate by the lower bonding plate mechanism 500 and can be distributed substantially uniformly across the entire surface of the glass substrate. In another embodiment of the lower bond forming plate mechanism 500, a controlled fluid flow can be used to provide forced cooling to the glass substrate.

  Although the embodiment of the lower bond forming plate mechanism 500 shown in FIGS. 16-21 has similar features to the upper bond forming plate mechanism 400 discussed above, the lower bond forming plate mechanism 500 may also have some different features. it can. 16 is a perspective view of the lower joint forming plate mechanism 500, and FIG. 17 is an exploded view of the lower joint forming plate mechanism 500. As shown in FIG. The main components of the lower bonding plate mechanism 500 include a base 502, an insulator 504, a heating disk 508, and a heat spreader 510. These elements are disposed within, coupled to, or supported by housing 506, which can be formed of, for example, stainless steel.

  Base 502 is coupled to the lower portion of housing 506, thus forming a substantially cylindrical structure that defines an interior space for receiving insulator 504. By way of example and not limitation, the base 502 can be formed of a machinable ceramic material (eg, Contronics 902 of machinable alumina silicate) that provides both structural integrity and high temperature resistance. it can. Insulator 504 can serve to limit the heat flow from the heating disk to base 502, housing 506 and other parts of bonding apparatus 10. By way of example and not limitation, the insulator 504 can be formed of a ceramic foam insulation material, such as 40% low-density quartz glass. The thermal insulation properties of the insulator 504 should prevent heat flow from the heating disk 508 to the base 502 (and other components) and provide a relatively low thermal inertia of the lower bond forming plate mechanism 500 (for fast thermal cycling capability). It is.

  The heating disk 509 and the insulator 504 can be joined using a ceramic adhesive, such as Contronics RESBOBD 905.

  The heating disk 508 can operate to generate heat in response to electrical (voltage and current) heating, and at the same time, any potential applied directly or indirectly to the glass substrate is not applied to the base 502 or the housing. As such, it also provides electrical insulation properties. That is, the heating disk 508 can be formed of a material that exhibits significant electrical insulation properties and significant thermal conductivity.

  Referring to FIG. 18, the heating disk 508 may be formed of a resistance heater layer 508A sandwiched between two (or more) electrical insulating layers 508B. By way of example and not limitation, the resistance heater layer 508A can be formed of THERMOFOIL-wound graphite and the electrical insulation layer 508B can be formed of quartz glass. The resistance heater layer 508A and the electrical insulation layer 508B can be joined using a ceramic adhesive, such as Contronics RESBOBD 905 (which exhibits low thermal expansion characteristics).

  Since substantially uniform heating is desired, the heating disk 508 can have edge heat loss compensation. In this embodiment, the heating disk 508 can have two heating zones, one in a substantially central configuration and the other in the form of a ring surrounding the central zone. A heating zone can be implemented in the resistance heater layer 508. For example, each heating zone can be formed by varying the width of each of the resistance heating materials as they spiral outward from the center of layer 508A. This results in a change in material resistance (and hence heating characteristics) that depends on the radial distance of the material from the center of layer 508A. This allows the heater element to respond (heat) differently to the heating voltage and current due to the difference in resistance as a function of radial position, so that the edge due to the use of a single heating voltage and current Heat loss compensation can be achieved.

  Voltage and current application to the resistive heater layer 508A is performed by a power source (not shown) and controlled by a control unit to achieve temperature regulation (which can use feedback control as discussed below). . The control unit can operate to program the lower bond forming plate mechanism 500 to follow any desired ramp heating profile or ramp cooling profile and residence time at any desired processing temperature. Terminal 552 (FIGS. 16-17) and terminal 508C (FIG. 18) allow electrical connection from the power source to resistance heater layer 508A.

  The heat spreader 510 is in heat flow with the heating disk 508 and can serve to integrate the heating profile provided by the heating disk 508 so that a more uniform heat supply is provided to the glass substrate. The heat spreader 510 can be electrically and thermally conductive so as to be in direct contact with the glass substrate to facilitate heating of the substrate and, if necessary, application of a junction forming voltage to the substrate. In this case as well, the junction formation voltage applied to the silicon donor wafer and the glass substrate is either (i) applying a potential to one of the silicon donor wafer and the glass substrate (the other being grounded) or (ii) the silicon donor. This can be achieved by applying respective potentials to both the wafer and the glass substrate. That is, the ability of the lower bonding formation plate mechanism 500 that can apply a potential (other than grounding) to the glass substrate is a feature provided as necessary. When a junction formation potential (other than ground) is applied to the glass substrate by the lower junction formation plate mechanism 500, such potential can be distributed substantially uniformly across the entire surface of the substrate, approximately 1750 VDC. It can be a range.

  Among materials that can be used to implement the heat spreader 510, conductive graphite, such as THERMOFOIL, is desirable. Terminal 553 allows electrical connection from a high voltage power supply (not shown) to heat spreader 510. The control unit can operate to program the voltage level from the high voltage power supply to achieve the desired voltage (such as 1750 VDC).

  FIG. 19, which illustrates further structural and functional aspects of the lower bond forming plate mechanism 500, will now be described. As shown, the lower bond forming plate mechanism 500 is an opening that allows access to the glass substrate during the bond forming process, for example, to provide preload pressure and / or seed voltage to the substrate, as needed. 550. This optionally provided feature need not be used, but can provide beneficial operation as discussed below. When aperture 550 is used, its preferred use is to allow for the application of preload pressure and / or seed voltage to the glass substrate prior to application of the junction formation voltage and the total junction formation pressure. As discussed above with respect to the top bond formation plate mechanism 400, the purpose of the preload pressure and seed voltage is to form an anodic bond at the local region of the interface between the silicon donor wafer and the glass substrate prior to application of the bond formation voltage. This facilitates anodic bond formation over substantially the entire area of the interface. The seed voltage can be the same or different magnitude as the junction formation, but a lower or equal voltage, such as 750-1000 VDC, is considered superior.

  As an example, a preload plunger 570 can be used to achieve the preload function described above. The preload plunger 570 may have substantially the same configuration as the preload plunger 470 discussed above with respect to FIGS. The preload plunger 570 can be fitted into the lower bond forming plate mechanism 500 and can pass through its opening 550 to make electrical and mechanical contact with the glass substrate. The electrode 584 of the preload plunger 570 contacts the glass substrate to provide at least a seed voltage. The plunger of the preload plunger 570 is placed coaxially around the electrode 584 and applies the preload pressure alone (or in combination with the electrode 584).

  The lower bond forming plate mechanism 500 allows a thermocouple to be thermally coupled to the heating disk 508 to provide a temperature feedback signal to the control unit (allowing precise temperature control of the heating disk 508 and the glass substrate). , May have one or more additional openings to allow insertion of a thermocouple through the lower bonding plate mechanism 500. The structure and position of the opening for the thermocouple (and the thermocouple itself) can be substantially the same as the structure and position discussed above with respect to the upper bonding plate mechanism 400.

  Reference is now made to FIGS. 20-21, which illustrate other features that can be used in one or more embodiments of the lower bonding plate mechanism. FIG. 20 is a cross-sectional view of the lower joint forming plate mechanism 500A using the forced cooling function. FIG. 21 is an exploded view of the lower joint forming plate mechanism 500A of FIG. In this embodiment, the insulator 504A of the lower bond forming plate mechanism 500A includes one or more cooling fluids through which cooling fluid can flow when it is desirable to lower the temperature of the SOG structure, particularly its glass substrate. It has a channel 520. For example, the cooling channel 520 can extend in a spiral from the center of the insulator 504A toward its periphery. Channel 520 can be machined into the surface of insulator 504A. Inflow tube 522 can work to flow cooling fluid into channel 520 and outflow tube 524 can operate to flow cooling fluid out of channel 520. A heat exchanger (not shown) can be used to cool the cooling fluid before flowing it back into the inlet tube 522. Forced cooling can be achieved by controlling the temperature and flow rate of the cooling fluid flowing through channel 520 using a control unit. Connecting an appropriate fluid coupling 560 to the inflow tube 522 and the outflow tube 524 to allow connection of a fluid source (not shown) to the lower bond forming plate mechanism 500A, as shown in FIG. Can do.

  Referring to FIG. 22, the bonding layer device 10 in an atmosphere control chamber 50 for providing control of the atmospheric conditions of the bonding environment such as vacuum and gas atmosphere (such as hydrogen, nitrogen, etc.) and other conditions. Can be arranged. In particular, the bond forming apparatus 10 is a non-vacuum atmosphere (eg, an atmosphere that may include one or more oxidants without degrading various components of the bond forming apparatus 10, particularly the bond forming plate mechanisms 400, 500. ) Can work within.

  Further details regarding the bond forming apparatus 10 will now be described with reference to FIGS. FIG. 23 shows the final SOG structure 600 and FIGS. 24-27 show the intermediate structure of the SOG structure formed using one or more embodiments of the bonding apparatus 10. Referring to FIG. 24, prior to entering material into the bond forming apparatus 10, the implantation surface 621 of the semiconductor donor wafer 620 is relatively flat and uniform suitable for bonding to a glass or glass-ceramic substrate 602 (FIG. 23). In order to form a smooth injection surface 621, it is prepared by, for example, polishing, cleaning, or the like. For discussion purposes, the semiconductor wafer 620 can be a substantially single crystal Si wafer, although any other semiconductor material can be used as discussed above.

  The release layer 622 is formed by subjecting the implantation surface 621 to an ion implantation process to create a weakened region that defines the release layer 622 below the implantation surface 621 of the semiconductor donor wafer 620. As an example, hydrogen ion implantation or other rare earth ions such as boron, helium, etc. can be implanted into the implantation surface 621. For example, a process for reducing the hydrogen ion concentration on the implantation surface 621 can be performed on the semiconductor donor wafer 620. For example, the semiconductor donor wafer 620 can be cleaned and the implantation surface 621 of the release layer 622 can be lightly oxidized. The light oxidation treatment can include treatment in oxygen plasma, ozone treatment, treatment with hydrogen peroxide, treatment with hydrogen peroxide and ammonia, treatment with hydrogen peroxide and acid, and combinations of these treatments. During these treatments, the hydrogen-terminated surface groups are oxidized to hydroxyl groups, which are thought to subsequently make the silicon wafer surface hydrophilic. The treatment can be performed at room temperature for oxygen plasma and can be performed at a temperature in the range of 25-150 ° C. for ammonia treatment or acid treatment. Appropriate surface cleaning of the glass substrate 602 (and the release layer 622) can be performed.

  If the bond formation apparatus 10 is in the initial position where the upper bond formation plate mechanism 400 is rotating upward (as in FIG. 2), the semiconductor donor wafer 620 and the glass substrate 602 are inserted into the bond formation apparatus 10. In this example, it is assumed that the glass substrate 602 is placed on the lower bonding formation plate mechanism 500 and held by gravity, and the semiconductor donor wafer 620 is placed on the glass substrate 602. If it is desired to apply a preload pressure and a seed voltage to initiate bond formation in the central region of the semiconductor donor wafer 620 and the glass substrate 602, the spacer mechanism 300 can be removed before placing the semiconductor donor wafer 620 on the glass substrate 602. Can be activated. As discussed with respect to FIGS. 6 and 14, the step motor is such that the rotating long 304 rotates relative to the mount ring 302, thus driving the gap adjusting plate 330 to place the gap adjusting plate 330 in the peripheral area of the glass substrate 602. 144 can rotate the gear 142. Next, the semiconductor donor wafer 620 can be placed on the gap adjusting plate 330 such that the gap adjusting plate 330 is sandwiched between the semiconductor donor wafer 620 and the glass substrate 602. In this way, the semiconductor donor wafer 620 and the glass substrate 602 will be separated by the thickness of the gap adjusting plate 330.

  Next, the upper bonding formation plate mechanism 400 is operated so as to rotate downward (by the opening / closing mechanism 200) so that the upper bonding formation plate mechanism 400 and the lower bonding formation plate mechanism 500 are arranged in parallel with a space therebetween. Can do. More particularly, as discussed above with respect to FIG. 7, manipulating the shaft 236 activates the jack 230, resulting in the shaft 232, the guide bushing 214 and the hinge plate 250 being lowered. The lowering of the hinge plate 250 pivots the mount plate 208 about the pivot axis link mechanism 258 so that the mount plate and upper joint forming plate mechanism 400 tilts downward until the mount plate 208 contacts the stop 259 of the hinge plate 250. Let At this point, the upper bond forming plate mechanism 400 is in a substantially parallel arrangement with respect to the lower bond forming plate mechanism 400. As a result of the hinge plate continuing to move downward, the lock 246 contacts the upper ends 114A, 116A, 118A (FIG. 6) of the guide posts 114, 116, 118 of the lift-pressurization mechanism 100. The operator can then fit the lock 246 into the guide posts 114, 116, 118 of the lift-pressurization mechanism 100. The lock 246 ensures that the mount plate 208 can counter the upward force on the semiconductor donor wafer 620 and the upper bonding plate mechanism 400 without applying excessive force to the lift-press mechanism 100.

  The ascending-pressurization mechanism 100 can then cause a coarse displacement toward the upper bond forming plate mechanism 400 of the lower bond forming plate mechanism 500 (and the glass substrate 602 and the semiconductor donor wafer 620). Since the electrode of the preload plunger 470 protrudes under the heat spreader 410 of the upper joint forming plate mechanism 400, the coarse displacement of the lower joint forming plate mechanism 500 as the ascending-pressurizing mechanism 100 moves toward the upper joint forming plate mechanism 400. When this occurs, the electrode 484 contacts the semiconductor donor wafer 620. Since the gap adjusting plate 330 of the spacer mechanism 300 prevents mutual contact between the semiconductor donor wafer 620 and the peripheral edge of the glass substrate 602, the preload plunger 470 is arranged so that the central region of the semiconductor donor wafer 620 contacts the glass substrate 602. The semiconductor donor wafer 620 will attempt to bow. In this way, anodic bonding of the semiconductor donor wafer 620 and the glass substrate 602 can be initiated by applying the preload pressure and seed voltage before the total pressure, temperature and voltage are applied.

  Following the initial anodic bonding formation of the central region of the semiconductor donor wafer 620 and the glass substrate 602, the spacer mechanism 300 can be commanded to withdraw the gap adjustment plate 330. The control unit commands the step motor 144 to rotate the gear 142 so that the rotating ring 304 rotates relative to the mount ring 302, thus pulling the gap adjustment plate 330 from between the semiconductor donor wafer 620 and the glass substrate 602. Can do. The gap adjustment plate 330 moves in a symmetrical motion, thereby preventing any uneven frictional loading between the semiconductor donor wafer 620 and the glass substrate 602. If the bonding process is performed in a vacuum, any gas is discharged from between the semiconductor donor wafer 620 and the glass substrate 602 by bonding the semiconductor donor wafer 620 and the central region of the glass substrate 602 prior to drawing the gap adjusting plate 330. can do. Therefore, the possibility that a gas (for example, air) prevents proper bonding between the semiconductor donor wafer 620 and the glass substrate 602 can be reduced.

  Referring to FIG. 25, the glass substrate 602 and the semiconductor donor wafer 620 are brought into direct contact using the bonding apparatus 10 as discussed above, and temperature, voltage and pressure are applied to the glass substrate 602 and the semiconductor donor wafer 620. The glass substrate 602 can be bonded to the release layer 622 using an anode (electrolysis) process. The bond forming device 10 can operate under the control of a computer program (running on the processor of the control unit) to achieve the desired anodic bond formation. Accordingly, it can be considered that the computer program operates the various mechanisms of the bonding apparatus 10 in the manner discussed herein to achieve anodic bonding.

  The release layer 622 and the glass substrate 602 of the semiconductor donor wafer 620 are heated under a temperature difference gradient. The glass substrate 602 can be heated (by the lower bonding plate mechanism 500) to a temperature higher than the heating temperature (by the upper bonding plate mechanism 400) of the semiconductor donor wafer 620 and the release layer 622. As an example, the temperature difference between the glass substrate 602 and the semiconductor donor wafer 620 (and the release layer 622) can be anywhere between about 6 ° C. and about 200 ° C. or higher. This temperature difference facilitates subsequent separation of the release layer 622 from the semiconductor donor wafer 620 due to thermal stress, so that the coefficient of thermal expansion (CTE) of the glass substrate is matched to the CTE of the semiconductor donor wafer 620 (eg, to the silicon CTE). Desirable to align). The temperature of the glass substrate 602 and the semiconductor donor wafer 620 can be within a range of about ± 650 ° C. of the strain point of the glass substrate 602.

Mechanical pressure is also applied to the assembly intermediate. The pressure ranges from about 1 to about 100 pounds per square inch (psi) (about 6.9 × 10 ³ to about 6.9 × 10 ⁵ Pa), about 6 to about 50 psi (about 4.1 × 10 ⁴ to In the range of about 3.4 × 10 ⁵ Pa), or about 20 psi (about 1.4 × 10 ⁵ Pa). Application of higher pressures, for example about 100 psi (about 6.9 × 10 ⁵ Pa) or higher, is possible, but such pressures can be used with caution since they can cause cracking of the glass substrate 602. Should. As discussed above with respect to FIGS. 4A, 4B and 6, the semiconductor donor wafer 620 and the glass substrate 602 can contact each other under the controlled operation of the lift-press mechanism 100. The second actuator 106 of the lift-press mechanism 100 can push up the lower mount 108, the lower bonding plate mechanism 500 and the glass substrate 602 to achieve controlled heating and pressure between the semiconductor donor wafer 620 and the glass substrate 602. Place it in such a position.

  A voltage is also applied across the assembled intermediate, for example by applying a positive potential to the semiconductor donor wafer 620 and a lower potential on the glass substrate 602. By application of the potential, alkali ions or alkaline earth ions in the glass substrate 602 move away from the semiconductor / glass interface and move deeper into the glass substrate 602. Thereby, (i) an alkali-free ion or alkali-free earth ion interface is formed, and (ii) the reactivity of the glass substrate 602 is very high, and the application of heat at a relatively low temperature causes the Two functions of strongly bonding to the release layer 622 are achieved.

  The pressure, temperature difference and potential difference are applied over a controlled time (eg, approximately 6 hours or less). Thereafter, the high level potential is lowered to zero and the semiconductor donor wafer 620 and the glass substrate 602 are cooled such that separation of the release layer 622 from the semiconductor donor wafer 620 is at least initiated. The cooling process may include forced cooling, in which a cooling fluid is poured into one or both of the upper bonding plate mechanism 400 and the lower bonding plate mechanism 500. In one or more embodiments, the forced cooling profile may include different profiles of the semiconductor donor wafer 620 and the glass substrate 602 (eg, cooling rate, dwell time and / or the like) to affect the strength and quality of the stripping process. Or cooling at the level) can be included.

  As shown in FIG. 26, after separation, the resulting structure can have a glass substrate 602 and a release layer 622 of semiconductor material bonded to the glass substrate 620. To access this structure, the lock 246 is removed from the guide posts 114, 116, 118, the shaft 232 raises the guide bushing 214, and the hinge plate 250 is perpendicular to the mount plate 208 by the block 260 and the pivot pivot linkage 258. The jack 230 is actuated (eg, by applying a rotational force to the shaft 236) to apply a directional force (FIGS. 6-7). This will cause the upper bond forming plate mechanism 400 to rise vertically away from the lower bond forming plate mechanism 500 while maintaining a substantially parallel relationship to the lower bond forming plate mechanism 500. The upward force that continues to be applied to the mount plate 208 causes the upper joint forming plate mechanism 400 to tilt in response to the rotational movement about the pivot link mechanism 258. Next, the intermediate SOG structure can be taken out from the bonding apparatus 10.

  In order to obtain a semiconductor layer 604 on a glass substrate 602 as shown in FIG. 27, any unnecessary or from the surface 623 by thinning and / or polishing techniques, for example by CMP or other techniques known in the art, or Coarse semiconductor material can also be removed.

  Note that the semiconductor donor wafer 620 can subsequently be reused to create another SOG structure 600.

  In accordance with one or more embodiments of the present invention, the bond forming apparatus 10 can be used to emboss a microstructure on a substrate such as glass, glass-ceramic, ceramic, and the like. Conventional techniques for forming replicated patterns on substrates such as glass include additive or subtractive processes (eg, using a UV curable polymer) (eg, chemical etching, reactive ion etching). These conventional approaches are undesirable in any application. In practice, polymer structures can be used for very versatile purposes, but cannot have the desired material properties, and etching methods can form microstructures, but are often very time consuming and expensive. However, according to one of many aspects of the present invention, the pattern is embossed / embossed from the seed to the substrate by heating. The seed mold is made of a material that is structurally rigid and has a melting point higher than that of the substrate. The seed mold and / or substrate is heated to a level at which the substrate flows into the seed mold microstructure. The components are then cooled and separated.

  In one or more embodiments, the bond forming device 10 can be adapted to rapidly heat the mold and / or substrate (eg, glass) to enable high throughput. The above-described forced cooling function, controlled pressure function, vacuum atmosphere, and the like of the bonding apparatus 10 can also increase the throughput.

  Referring to FIG. 28, the bonding apparatus 10 is operable to receive a seed 700 having a microstructure 701 (eg, nanometer scale) 701 disposed on at least one surface thereof. The microstructure on the seed mold 700 is a reversal of the microstructure that is desirably embossed on the substrate 702. As an example, the seed mold 700 can be coupled to the lower bond forming plate mechanism 500 and a substrate 702 (eg, a glass substrate) can be placed on the seed mold 700. Alternatively, the substrate 702 can be coupled to the lower bond forming plate mechanism 500 and the seed 700 can be placed on the substrate 702. In yet another embodiment, the seed mold 700 can be clipped or otherwise fastened to the upper bond forming plate mechanism 400. GRAFOIL gaskets 704A and 704B can be sandwiched between the upper bonding plate mechanism 400 / lower bonding plate mechanism 500 and the substrate 702 / seed mold 700, respectively.

  The bond forming device 10 can then be closed (as discussed above) and a temperature higher than the Tg of the glass substrate 702 is applied. In this way, the pattern or structure is transferred from the seed mold 700 to the glass substrate 702. The replication process can be performed under high pressure due to the controlled pressurization function of the bond forming device 10 as discussed above. Alternatively, gravity and atmospheric pressure can be used to facilitate the flow of the glass substrate 702 into the microstructure 700 of the seed mold 700.

  The seed mold 700 can be composed of a material that will not change structurally at elevated temperatures, such as the Tg of the glass substrate 702, up to or above the substrate flow temperature. As an example, quartz glass can be used to provide the seed mold 700. The microstructure 701 can be formed in the seed mold 700 by reactive ion etching (RIE). Surface treatment of the mold 700 and / or the substrate 702 can also be performed, such as diamond coating.

  Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. Thus, it will be appreciated that numerous modifications may be made to the illustrated embodiments and alternative configurations may be devised without departing from the spirit and scope of the invention as defined in the appended claims. is there.

1 is a perspective view of one embodiment of a bond forming device of the present invention in a somewhat closed arrangement. FIG. FIG. 2 is a front view of the bond forming device of FIG. 1 in an open configuration. FIG. 2 is a front view of the joint forming apparatus of FIG. 1 in a somewhat closed arrangement. FIG. 2 is a front view of the joint forming apparatus of FIG. 1 in a closed arrangement. FIG. 2 is a side view of the bond forming device of FIG. 1 in a closed configuration. FIG. 2 is a partial perspective exploded view of the joint forming apparatus of FIG. 1. FIG. 2 is a perspective view of one embodiment of a lift-press mechanism suitable for use in the bond forming apparatus of FIG. 1 (and / or one or more alternative embodiments). FIG. 2 is a perspective view of one embodiment of an opening and closing mechanism suitable for use in the joint forming apparatus of FIG. 1 (and / or one or more alternative embodiments). 2 is a perspective view of one embodiment of an upper (or lower) bond forming plate mechanism suitable for use in the bond forming apparatus of FIG. 1 (and / or one or more alternative embodiments). FIG. 8B is a cross-sectional view of the bond forming plate mechanism of FIG. 8A taken along line 8B-8B. FIG. 8B is a perspective view of a heater element suitable for use with the upper (or lower) bond forming plate mechanism of FIG. 8A or other embodiments. FIG. 8B is a perspective view of another heater element suitable for use with the upper (or lower) bond forming plate mechanism of FIG. 8A or other embodiments. FIG. 8B is a perspective exploded view of the joint forming plate mechanism of FIG. 8A. FIG. 8B is a top view of the bond forming plate mechanism of FIG. 8A. 11B is a cross-sectional view of the bond forming plate mechanism of FIG. 11A taken along line 11B-11B. 11B is a cross-sectional view of the bond-forming plate mechanism of FIG. 11A taken along line 11C-11C. FIG. 8B is a side view of a preload plunger suitable for use with the joint forming apparatus of FIG. 8A (and / or one or more alternative embodiments). 12B is a cross-sectional view of the preload plunger of FIG. 12A taken along line 12B-12B. FIG. 2 is a cross-sectional view of an upper bond forming plate mechanism and a lower bond forming plate mechanism suitable for use in the bond forming apparatus of FIG. 1 (and / or one or more alternative embodiments). 2 is a perspective view of one embodiment of a spacer mechanism suitable for use in the bond forming apparatus of FIG. 1 (and / or one or more alternative embodiments). FIG. FIG. 8B is a perspective view of a thermocouple of a preload fixture suitable for use with the bond forming plate mechanism of FIG. 8A (and / or one or more alternative embodiments). FIG. 6 is a perspective view of another embodiment of an upper (or lower) bond forming plate mechanism suitable for use in the bond forming apparatus of FIG. 1 (and / or one or more other embodiments). FIG. 17 is an exploded view of the joint forming plate mechanism of FIG. 16. FIG. 17 is an exploded view of a heating disk suitable for use with the bond forming plate mechanism of FIG. 16 (and / or one or more alternative embodiments). It is sectional drawing of the joint formation plate mechanism of FIG. FIG. 2 is a cross-sectional view of another embodiment of an upper (or lower) bond forming plate mechanism suitable for use in the bond forming apparatus of FIG. 1 (and / or one or more other embodiments). FIG. 21 is a perspective exploded view of the joint forming plate mechanism of FIG. 20. 2 is a side view of the bonding apparatus of FIG. 1 arranged in an atmosphere control chamber. FIG. It is a block diagram which shows the structure of the SOG device which can be produced using the junction forming apparatus of FIG. FIG. 2 is a block diagram illustrating an intermediate structure that can be formed and / or operated using the bonding apparatus of FIG. FIG. 2 is a block diagram illustrating an intermediate structure that can be formed and / or operated using the bonding apparatus of FIG. FIG. 2 is a block diagram illustrating an intermediate structure that can be formed and / or operated using the bonding apparatus of FIG. It is a block diagram which shows the last SOG structure which can be produced using the junction forming apparatus of FIG. FIG. 2 is a block diagram of the bond forming apparatus of FIG. 1 adapted for microstructural embossing applications.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Bonding apparatus 12 Base plate 14 Support frame 50 Atmosphere control chamber 100 Ascending-pressurizing mechanism 200 Opening / closing mechanism 300 Spacer mechanism 400,500 Bonding plate mechanism 600 SOG structure 602 Glass substrate 604 Semiconductor layer 620 Semiconductor donor wafer 622 Peeling layer 700 Type 701 Microstructure 702 Substrate

Claims (21)

In the anodic bonding apparatus,
A first bond forming plate mechanism that is operable to fit a first material sheet and provide the first material sheet with at least one of controlled heating, voltage, and cooling;
A second bond-forming plate mechanism operable to mate the second material sheet and to provide the second material sheet with at least one of controlled heating, voltage and cooling;
Operatively coupled to the first bond-forming plate mechanism and the second bond-forming plate mechanism, and along the respective surfaces of the first material sheet and the second material sheet, the first Operating the first bond forming plate mechanism and the second bond forming plate mechanism toward each other to achieve a controlled pressure on the material sheet and the second material sheet relative to each other. And a first bond forming plate mechanism for providing a heating, voltage and pressure profile sufficient to achieve anodic bond formation between the first material sheet and the second material sheet And a control unit operable to generate a control signal to the second bond forming plate mechanism and the pressure mechanism,
An anodic bonding apparatus comprising:   2. The anodic bonding apparatus according to claim 1, wherein the first material sheet is at least one of a glass substrate and a glass-ceramic substrate, and the second material sheet is a semiconductor donor wafer. . The heating profile includes at least a peak temperature greater than about 600 ° C. of at least one of the first material sheet and the second material sheet;
The heating profile includes at least a peak temperature between about 600 ° C. and 1000 ° C. of at least one of the first material sheet and the second material sheet;
The heating profile includes at least a peak temperature greater than about 1000 ° C. of at least one of the first material sheet and the second material sheet;
The voltage profile includes at least a peak voltage between about 100 VDC and about 2000 VDC of at least one of the first material sheet and the second material sheet;
The voltage profile includes at least a peak potential difference between about 1000 VDC and about 2000 VDC between the first material sheet and the second material sheet;
One of the first material sheet and the second material sheet is at ground potential;
The peak potential difference is such that a positive potential is applied to one of the first material sheet and the second material sheet, and a negative potential is applied to the other of the first material sheet and the second material sheet. Achieved by applying,
The pressure profile is about 1 pound per square inch (psi) (about 6.9 × 10 ³ Pa) and 100 psi (about 6.9 × 10 ⁵ ) between the first material sheet and the second material sheet. Pa) at least during peak times, and
The pressure profile includes at least a peak pressure of about 20 psi (about 1.4 × 10 ⁴ Pa) between the first material sheet and the second material sheet;
The anodic bonding apparatus according to claim 1, wherein at least one of the anodic bonding apparatus is provided.   The control unit facilitates separation of a release layer bonded to the other of the first material sheet and the second material sheet from one of the first material sheet and the second material sheet. Generate a control signal to at least one of the first bond forming plate mechanism and the second bond forming plate mechanism to provide a sufficient forced cooling profile to the first material sheet and the second material The anodic bonding apparatus according to claim 1, wherein the anodic bonding apparatus can operate.   The anodic bond formation according to claim 4, wherein the cooling profile provides the first material sheet and the second material sheet with at least one of different cooling rates and different cooling levels. apparatus. In the anodic bonding apparatus,
A first bond forming plate mechanism operable to mate a first material sheet and to provide at least one of controlled heating and voltage to the first material sheet;
A second bond forming plate mechanism operable to fit a second sheet of material and provide at least one of controlled heating and voltage to the second sheet of material; and Of the first material sheet and the second material sheet, operatively coupled to a bond forming plate mechanism, to assist in anodic bond formation of the first material sheet and the second material sheet Along the respective surfaces, the first bond forming plate mechanism and the second bond forming plate mechanism are configured to achieve a controlled pressure on the first material sheet and the second material sheet relative to each other. Lift-pressurization mechanism, which can operate to press towards each other
An anodic bonding apparatus comprising: Each of the first bonding formation plate mechanism and the second bonding formation plate mechanism has a mounting surface, and each of the mounting surfaces has one each of the first material sheet and the second material sheet. A mounting plane for fitting, and the lift-pressurization mechanism can operate to apply a controllable force to the first bond-forming plate mechanism, the controllable force being the first Substantially perpendicular to the mounting plane of the bonding plate mechanism;
The anodic bonding apparatus according to claim 6.   The lift-pressurization mechanism includes a bellows actuator, and the bellows actuator is operable to apply the controllable force in response to a change in fluid pressure applied to the bellows actuator. Item 8. The anodic bonding apparatus according to Item 7. The ascending-pressurizing mechanism is
A first actuator function for providing a rough displacement of the first bond forming plate mechanism for moving the first bond forming plate mechanism toward the second bond forming plate mechanism; and the first bond forming. A second actuator function for applying the controllable force to the plate mechanism;
The anodic bonding apparatus of claim 7, wherein the anodic bond forming apparatus is operable to provide   The first actuator function causes an initial contact between the first material sheet and the second material sheet along respective surfaces of the first material sheet and the second material sheet. The anodic bonding apparatus according to claim 9. A first actuator and a second actuator, wherein the first-actuator mechanism is operable to provide the first actuator function and the second actuator function, respectively, wherein the first actuator and The second actuator is axially aligned with the first bonding plate mechanism;
The first actuator and the second actuator are arranged such that operation of the first actuator imparts the coarse displacement to both the second actuator and the first joint forming plate mechanism. And actuating the second actuator does not impart any displacement to the first actuator;
The anodic bonding apparatus according to claim 9, wherein at least one of the anodic bonding apparatus is provided. In the anodic bonding apparatus,
A first bond forming plate mechanism operable to fit a first material sheet and a second bond forming plate mechanism operable to fit a second material sheet comprising: Each of the first bond forming plate mechanism and the second bond forming plate mechanism has a mounting surface, and each of the mounting surfaces is fitted with one each of the first material sheet and the second material sheet. A first and second joint forming plate mechanism that defines a mounting plane for insertion, and is operatively coupled to the second joint forming plate mechanism,
(I) a controlled pressure of the first material sheet and the second material sheet on each other along the respective surfaces of the first material sheet and the second material sheet when in a closed configuration; Help achieve,
(Ii) In the first operation, the second bonding formation plate mechanism is moved in the direction substantially perpendicular to the mounting plane of each of the first bonding formation plate mechanism and the second bonding formation plate mechanism. Separating from the first bonding plate mechanism, and the second operation is such that the mounting plane of the second bonding plate mechanism is at an oblique angle to the mounting plane of the first bonding plate mechanism. To provide a double open motion profile that tilts the second bond forming plate mechanism away from the first bond forming plate mechanism;
Opening and closing mechanism, which can operate
An anodic bonding apparatus comprising: The opening / closing mechanism is
An assembly lift operable to extend and retract in a direction substantially perpendicular to the mounting plane of the first bond-forming plate mechanism; and a first end edge and a second end edge A mounting plate, wherein the second bond-forming plate mechanism is disposed toward the first end edge of the mount plate and is intermediate between the first end edge and the second end edge. A mounting plate coupled in a pivotable manner to the assembly lift in position,
Have
The mounting planes of the first bond forming plate mechanism and the second bond forming plate mechanism remain substantially parallel throughout substantially all of the first opening operation of the second bond forming plate mechanism. is there,
The anodic bonding apparatus according to claim 12. The opening / closing mechanism extends in a direction substantially parallel to the assembly lift and is slidably fitted to the second end edge of the mount plate at a first end of the assembly lift. Or even more stop arms,
The stop arm causes the second bonding plate mechanism to move in the direction substantially perpendicular to the mounting plane of each of the first bonding plate mechanism and the second bonding plate mechanism. Allowing movement of the second end edge of the mounting plate such that the assembly lift extends over a limited stroke during the first movement away from the forming plate mechanism;
The anodic bonding apparatus according to claim 13. The one or more stop arms cause the continued extension of the assembly lift to produce a lever action at the second end of the mount plate about the pivot connection of the mount plate and the assembly lift. Can be operated to inhibit movement of the second end edge of the mount plate beyond the limited stroke,
The lever action at the second end edge of the mount plate tilts the second bond forming plate mechanism away from the first bond forming plate;
Retraction of the assembly lift from the open arrangement of the first bond forming plate mechanism and the second bond forming plate mechanism is due to the lever action at the second end edge of the mount plate. Tilting the mechanism toward the first bond forming plate mechanism, and the pulling of the assembly lift is substantially on the mounting surface of each of the first bond forming plate mechanism and the second bond forming plate mechanism. The assembly lift is continuously retracted so that the second bond forming plate mechanism is separated from the first bond forming plate mechanism in a direction perpendicular to the first bond forming plate mechanism. Can operate to complete the limited journey,
The anodic bonding apparatus according to claim 14, wherein at least one of In the anodic bonding apparatus,
A first bond forming plate mechanism that is operable to fit a first material sheet and provide the first material sheet with at least one of controlled heating, voltage, and cooling. A second bond forming plate mechanism operable to provide at least one of controlled heating, voltage and cooling to the second material sheet, and a plurality of movable assembly gap adjustment components A spacer mechanism, wherein the spacer mechanism is coupled to the first bond forming plate mechanism to prevent mutual contact between the peripheral edges of the first material sheet and the second material sheet; The assembly gap adjustment component is directed toward the first material sheet and the second material sheet, and symmetrically between the first material sheet and the second material sheet. Spacer mechanism that can operate to movement,
With
The first material sheet is at least one of a glass substrate and a glass-ceramic substrate, and the second material sheet is a semiconductor donor wafer;
An anodic bonding apparatus characterized by that. The spacer mechanism has a substantially annular structure;
A mount ring coupled in a fixed manner to the first joint-forming plate mechanism; and a rotary ring coupled in a rotatable manner to the mount ring;
Have
The plurality of assembly gap adjustment components move in and / or out of the space between the first material sheet and the second material sheet in response to forward and reverse rotations of the rotating ring. The plurality of assembly gap adjustment components are slidably attached to the mount ring, so that
The anodic bonding apparatus according to claim 16. The rotating ring has one or more cams disposed at an end edge of the rotating ring;
Each of the assembly gap adjustment components is synchronized with the assembly gap adjustment component in and / or from the space between the first material sheet and the second material sheet as the rotating ring rotates. One or more cam guides that fit into the one or more cams of the rotating ring to move, and the rotating ring has one cam slot for each assembly clearance adjustment component. And each of the cam slots spirals away from the center of the spacer mechanism,
The anodic bonding apparatus according to claim 14, wherein at least one of Each of the first bonding formation plate mechanism and the second bonding formation plate mechanism has a mounting surface, and each of the mounting surfaces includes one each of the first material sheet and the second material sheet. A mounting plane for fitting; and the spacer mechanism, wherein the assembly gap adjusting component moves at least substantially parallel to the mounting surface of the first joint forming plate mechanism and the first material sheet Operable to be sandwiched between the second material sheets or moved out of between the first material sheet and the second material sheet,
The anodic bonding apparatus according to claim 16. The assembly between the first material sheet and the second material sheet so that the spacer mechanism only allows a bond formation in the central region of the first material sheet and the second material sheet. Can operate to move the gap adjustment component,
After the spacer mechanism has been joined in the central region of the first material sheet and the second material sheet, the assembly gap is between the first material sheet and the second material sheet. Can operate to move the adjusting plate out,
The apparatus further comprises at least one preload plunger having at least an electrode protruding through an opening in the first bond forming plate mechanism, the electrode serving to electrically connect to the first sheet of material. be able to,
The preload plunger is operable to exert a force on the first material sheet and move relative to the second material sheet in a central region of the first material sheet and the second material sheet; and,
The preload plunger is configured to induce a bond formation between the first material sheet and the second material sheet in a central region of the first material sheet and the second material sheet. Operable to apply a seed voltage to one material sheet;
The anodic bonding apparatus according to claim 16, wherein at least one of In the device
A first bond-forming plate mechanism that is operable to fit a material sheet and provide the material sheet with at least one of controlled heating, voltage, and cooling. A second bond forming plate mechanism operable to provide at least one of controlled heating, voltage and cooling to the embossing mold,
The embossing type for the material sheet along the respective surfaces of the embossing die and the material sheet, which are operatively coupled to the first joining forming plate mechanism and the second joining plate mechanism. A pressure mechanism operable to press the first bond forming plate mechanism and the second bond forming plate mechanism toward each other to achieve a controlled pressure of the mold, and the material sheet Control of the first bond forming plate mechanism, the second bond forming plate mechanism, and the pressurizing mechanism to provide a heating profile sufficient to cause the embossing mold to flow into the microstructure. A control unit, which can operate to generate a signal,
A device comprising:

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