KR20090018060A - High temperature anodic bonding apparatus - Google Patents

Abstract

a first bonding plate mechanism operable to engage a first material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a second bonding plate mechanism operable to engage a second material sheet, and to provide at least one of controlled heating, voltage, and cooling thereto; a pressure mechanism operatively coupled to the first and second bonding plate mechanisms and operable to urge the first and second bonding plate mechanisms toward one another to achieve controlled pressure of the first and second material sheets against one another along respective surfaces thereof; a control unit operable to produce control signals to the first and second bonding plate mechanisms and the pressure mechanism to provide heating, voltage, and pressure profiles sufficient to achieve anodic bonding between the first and second material sheets.

Description

HIGH TEMPERATURE ANODIC BONDING APPARATUS

Cross Citation for Related Applications

This application is currently pending, named "A BONDING PLATE MECHANISM FOR USE IN ANODIC BONDING." Claims priority to US Provisional Patent Application Serial No. 60 / 793,976, filed April 21, 2006 by Raymond C. Cady.

The present invention relates, for example, to an apparatus for fabricating a semiconductor-on-insulator (SOI) structure on an insulated substrate using an anodic bonding technique.

Recently, the most commonly used semiconductor material for semiconductor structures on insulating substrates has been silicon, and the abbreviation “SOI” has been applied to such structures. SOI technology is becoming increasingly important in displays such as high performance thin film transistors, solar cells and active matrix displays.

To facilitate the description, the following description will sometimes refer to SOI structures, but such references to such specific types of structures are intended to limit the scope of the present invention in any way to facilitate the description of the present invention. It should not be interpreted or interpreted. The abbreviation SOI is not limited to a silicon structure on an insulating substrate, but is used herein to generally refer to a semiconductor structure on an insulating substrate. Likewise, the abbreviation SOG is not limited to a silicon structure on a glass substrate, but is generally used to refer to a semiconductor structure on a glass substrate. The term SOG is not limited to the silicon structure on the glass-ceramic substrate, but includes the semiconductor on the glass-ceramic substrate. Abbreviated SOI includes SOG structure.

The SOI structure may comprise a thin layer of single crystal silicon (typically 0.1-0.3 microns thick) over an insulating material. Various methods for obtaining the SOI structure include: (i) bonding a single crystal silicon wafer to another silicon wafer on which an oxide layer of SiO ₂ is grown; (ii) an ion-implantation method for forming a buried oxide layer in the silicon wafer; (iii) an ion-implantation method for separating a silicon thin film layer from a silicon donor wafer and bonding the silicon thin film layer to another silicon wafer.

US Patent No. 5,374,564 discloses a process for obtaining a unitary silicon film on a substrate using a thermal process. A semiconductor donor wafer having a flat surface: (i) produces a gaseous micro-bubbles layer defined by a lower region consisting of a large amount of the donor wafer and an upper region consisting of a relatively thin exfoliation layer. Implanting by bombarding the wafer surface with ions; (ii) contacting a flat surface of the wafer with a stiffener composed of at least one layer of rigid material, and (iii) the ion irradiation is performed and the pressure effect in the micro-bubble and the thin film and mass substrate The third step is to heat-treat the wafer assembly at a temperature sufficient to separate the gaps.

In particular, these processes generally do not work with glass or glass-ceramic substrates because they require much higher temperatures to bond some glass and glass-ceramic substrates.

US Patent Application No. 2004/0229444 discloses a process for producing SOG structures, the entire disclosure of which is incorporated by reference. (i) exposing the silicon donor wafer surface to hydrogen ion implantation to produce a release layer having a bonding surface; (ii) bringing the bonding surface of the silicon donor wafer into contact with the glass substrate; (iii) applying pressure, temperature and voltage to them to facilitate bonding of the silicon donor wafer and the glass substrate; And (iv) cooling the structure to a general temperature to facilitate separation of the glass substrate and the silicon release layer from the silicon donor wafer.

The SOG structure resulting from the process disclosed in US Patent Application No. 2004/0229444 may include, for example, a glass substrate and a semiconductor layer bonded thereto. The particular material of the semiconductor layer may be in the form of a single crystal material in nature. The word "virtually" refers to the semiconductor layer in view of the fact that the semiconductor material usually contains at least some internal or surface defects intentionally added, such as inherent or lattice defects or a few grain boundaries. Used to describe this. The word "in fact" also reflects the fact that certain dopants can be distorted or otherwise affect the crystal structure of the bulk semiconductor.

For illustrative purposes, it can be assumed that the semiconductor layer discussed herein can be formed from silicon. However, of course, the semiconductor material may be a silicon-based semiconductor or any other type of semiconductor, such as III-V, II-IV, II-IV-V, or the like, which are semiconductor types. Examples of such materials include silicon (Si), silicon germanium (SiGe), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), gallium phosphorus (GaP), and indium phosphorus (InP). The glass substrate may be formed from oxide glass or oxide glass-ceramic.

Although not required, the SOG structures described herein may comprise oxide glass or oxide glass-ceramic.

For example, the said glass substrate is Corning Incorporated Compound No. It can be formed from a glass substrate containing alkaline-earth ions, such as a substrate made of Eagle 2000 ^™ . Such glass materials are used, for example, in the manufacture of liquid crystal displays.

Good quality anodic bonding between the thin exfoliation semiconductor layer (eg, silicon) and certain substrates, such as a kind of glass and glass ceramic substrate, requires the precise control of a number of process variables by the present invention. These variables include temperature (especially high temperatures approaching 1000 ° C. and / or above 1000 ° C.), pressure (between the semiconductor layer and the substrate), voltage (which induces electrolysis), atmospheric conditions (eg vacuum or non-vacuum). , One or more of a cooling profile (inducing peeling), a mechanical separation enhancement (eg, to aid exfoliation), and the like. Prior art for anodic bonding a semiconductor layer to a glass or glass-ceramic substrate does not sufficiently address the above process variables. For example, the temperature limit of a conventional anode bonding process is approximately 600 ° C.

Therefore, there is a need for a technique for a new device that can achieve the anodic bonding process, for example, by controlling one or more of the process variables.

An anode bonding apparatus according to one or more embodiments of the present invention comprises: a first bonding plate mechanical device operable to engage a first sheet of material and to provide at least one of controlled heating, voltage and cooling; A second bonding plate mechanical device operable to engage the second sheet of material and to provide at least one of controlled heating, voltage and cooling; To achieve a controlled pressure of the first and second sheet of material opposing one another along each surface of each of the first and second joining plate machinery and operatively coupled to the first and second joining plate machinery. A pressure mechanism operable to tighten the first and second joining plate machinery towards each other for And generate control signals for the first and second bond plate machinery and the pressure mechanism to provide sufficient heating, voltage, and pressure profiles to achieve an anodic bonding between the first and second sheet of materials. Control unit operable to operate.

An anode bonding apparatus according to one or more further embodiments of the present invention comprises: a first bonding plate mechanical device operable to engage a first sheet of material and provide at least one of controlled heating and voltage; A second bonding plate mechanical device operable to engage the second sheet of material and provide at least one of controlled heating and voltage; And the first operatively coupled to the first bonding plate machinery and facing each other along respective surfaces of the respective first and second bonding plate machinery to assist in anodic bonding of the first and second sheet of material. And a lift and press mechanism operable to act on each other to tighten the first and second bond plate mechanisms to achieve a controlled pressure of the second sheet of material.

An anode bonding apparatus according to one or more further embodiments of the present invention is a second bonding plate mechanical device operable to engage a first bond plate mechanism and a second material sheet to engage the first sheet of material, wherein The first and second joining plate machinery include: first and second joining plate machinery each comprising a respective bearing surface defining a bearing surface for engagement of each of the first and second sheets of material; And (i) control of said first and second sheet of material opposing each other along each surface of said first and second joining plate machinery when in the closing direction, operatively coupled to said second joining plate machinery. To help attained pressure; (ii) to provide a dual action open profile, wherein a first operation is performed from the first joining plate machine device from the first joining plate machine device in a direction perpendicular to each bearing surface of the first and second joining plate machine devices. Separating the device, and the second operation is to tilt the second joining plate mechanism away from the first joining plate mechanism such that the second joining plate mechanism is inclined to the bearing surface of the first joining plate machinery. Possible opening and closing mechanism.

An anode bonding apparatus according to one or more further embodiments of the present invention includes: a first bonding plate mechanical device operable to engage a first sheet of material and provide at least one of controlled heating, voltage, and cooling; A second bonding plate mechanical device operable to engage the second sheet of material and to provide at least one of controlled heating, voltage and cooling; And a shim assembly coupled between the first and second sheet of material toward the first and second sheet of material coupled to the first bonding plate machine and wherein the peripheral edges of the first and second sheet of material are not in contact with each other. and a spacer mechanism comprising a plurality of movable shim assemblies operable to move the shim assemblies symmetrically.

An anode bonding device (for use in anodic bonding a first and a second sheet of material together) according to one or more further embodiments of the present invention includes a base comprising a first and a second spacing surface; Operative thermal insulation to be supported by the second surface of the base and to impede heat transfer to the base; A heating disk coupled directly or indirectly to the insulator and operable to generate heat in response to power; And a heat dissipation plate coupled directly or indirectly to the heating disc and operable to at least channel heat from the heating disc, the heat dissipating plate applying a voltage to the first sheet of material; The voltage is in accordance with each heating and voltage profile to assist in anodic bonding of the first and second sheet of material.

An anode bonding device (for use in anodic bonding a first and a second sheet of material together) according to one or more further embodiments of the present invention includes a base comprising a first and a second spacing surface; A heating disk connected directly or indirectly to the base and operable to generate heat in response to power, wherein the heater disk comprises a plurality of heating zones operable to provide edge loss temperature compensation characteristics, The heat imparted to the sheet of material depends on a heating profile to assist in anodic bonding of the first and second sheet of material.

An anode bonding device (for use in anodic bonding a first and a second sheet of material together) according to one or more further embodiments of the present invention includes a first and a second spacing surface and is adapted to generate heat in response to power. An operable heating disk; A heat dissipation plate coupled directly or indirectly to the second surface of the heating disc and operable to at least channel heat from the heating disc and energizing the first sheet of material; And at least one cooling channel in thermal communication with the first surface of the heater disk and operable to transport a cooling fluid to remove heat from the first sheet of material through the heat sink and heater disk. The heating and voltage imparted to the first sheet of material was in accordance with each heating and voltage profile to assist in the anodic bonding of the first and second sheet of material, and the cooling imparted to the first sheet of material was bonded to the second sheet of material. Follow a cooling profile to help separate the release layer from the first sheet of material.

An anode bonding apparatus (for use in anodic bonding a first and second sheet of material together) in accordance with one or more further embodiments of the present invention comprises: a base comprising first and second spacing surfaces and openings therethrough; A heating disc supported by the base and thermally insulated from the base and operable to generate heat in response to power, the heating disc comprising an opening therethrough; A heat dissipation plate coupled directly or indirectly to the heating disc and operable to at least channel heat from the heating disc, the heat dissipation plate imparting a junction voltage to the first sheet of material, wherein the heat dissipation plate comprises an opening therethrough. ; And a preload plunger having an electrode extending through the opening of the base, the electrode operable to be electrically connected to the first sheet of material when it is connected to the heat sink.

Other aspects, features, advantages, and the like will become more apparent to those skilled in the art when the description of the present invention is described in conjunction with the accompanying drawings.

To illustrate the various aspects of the invention, the presently preferred drawings are shown, but the invention is not limited to the arrangement and means as shown.

1 is a perspective view of an embodiment of the bonding device of the present invention in a partially closed configuration.

2 is a front elevational view of the bonding apparatus of FIG. 1 in an open configuration;

3 is a front elevational view of the bonding device of FIG. 1 in a partially closed configuration.

4A is a front elevational view of the bonding device of FIG. 1 in a closed configuration.

4B is a side elevation view of the bonding device of FIG. 1 in a closed configuration.

5 is a partially exploded perspective view of the bonding apparatus of FIG. 1.

6 is a perspective view of an embodiment of a lift and press mechanical device suitable for use in the bonding device of FIG. 1 (and / or one or more other embodiments).

7 is a perspective view of an embodiment of an open and closed mechanical device suitable for use in the bonding device of FIG. 1 (and / or one or more other embodiments).

8A is a perspective view of an embodiment of an upper (or lower) joining plate mechanical device suitable for use in the joining device of FIG. 1 (and / or one or more other embodiments).

FIG. 8B is a cross-sectional view of the bonding plate mechanism of FIG. 8A taken through the line 8B-8B. FIG.

FIG. 9A is a perspective view illustrating a heater component suitable for use with the upper (or lower) bond plate mechanism of FIG. 8A or other embodiments. FIG.

FIG. 9B is a perspective view of an alternative heater component suitable for use with the upper (or lower) bond plate mechanism of FIG. 8A or other embodiments. FIG.

10 is an exploded perspective view of the joining plate mechanism of FIG. 8A.

FIG. 11A is a top view of the junction plate mechanism of FIG. 8A. FIG.

FIG. 11B is a cross-sectional view of the junction plate mechanism of FIG. 11A taken through line 11B-11B.

FIG. 11C is a cross-sectional view of the junction plate mechanical device of FIG. 11A taken through line 11C-11C. FIG.

FIG. 12A is a side elevation view of a preload plunger suitable for use with the junction plate machinery of FIG. 8A (and / or one or more other embodiments). FIG.

12B is a cross sectional view of the preload plunger of FIG. 12A taken through line 12B-12B.

FIG. 13 is a cross-sectional view of the upper and lower bonding plate machinery suitable for use in the bonding apparatus of FIG. 1 (and / or one or more other embodiments). FIG.

14 is a perspective view of an embodiment of a spacer mechanism suitable for use in the bonding apparatus of FIG. 1 (and / or one or more other embodiments).

FIG. 15 is an exploded view of a thermocouple in a preloaded fixture suitable for use with the junction plate machinery of FIG. 8A (and / or one or more other embodiments).

16 is a perspective view of an alternative embodiment of an upper (or lower joining plate mechanical device) suitable for use in the joining device of FIG. 1 (and / or one or more other embodiments).

FIG. 17 is an exploded view of the joining plate mechanism of FIG. 16.

FIG. 18 is an exploded view of a heater disk suitable for use with the junction plate mechanism of FIG. 16 (and / or one or more other embodiments).

19 is a cross-sectional view of the joining plate mechanism of FIG. 16.

20 is a cross-sectional view of an alternate embodiment of an upper (or lower) joining plate machinery suitable for use in the joining apparatus of FIG. 1 (and / or one or more other embodiments).

21 is an exploded perspective view of the joining plate mechanical device of FIG. 20.

22 is a side elevation view of the bonding apparatus of FIG. 1 disposed in an atmospheric control chamber.

FIG. 23 is a block diagram illustrating the structure of an SOG device that may be produced using the bonding device of FIG. 1. FIG.

24-26 are block diagrams illustrating intermediate structures that may be formed and / or operated when using the bonding apparatus of FIG. 1.

27 is a block diagram of the bonding apparatus of FIG. 1 adapted to micro-structure embossing applications.

Referring to the drawings, a perspective view of a bonding apparatus 10 according to one or more embodiments of the present invention is shown in FIG. 1, wherein like reference numerals denote similar components. In this embodiment, the bonding apparatus is an integrated processing system capable of anodizing two sheets of material of an SOI structure at temperatures approaching and / or exceeding the conventional bonding temperatures, such as 600 ° C. and 1000 ° C. (The bonding device 10 may also be anodically bonded at conventional temperatures.) For illustrative purposes, but not by way of limitation, an SOI structure may be used when the bonding device 10 operates (eg, the SOI). Will be described herein as a suitable work piece. Also for illustrative purposes (but not limiting), the particular SOI structure described below as a workpiece bonds a semiconductor donor wafer (such as a silicon wafer) to a glass (or glass ceramic) substrate and the semiconductor donor wafer is bonded to the glass. It will be an SOG structure formed by stripping the silicon layer from the silicon donor wafer so that it remains bonded to the substrate.

The bonding apparatus 10 includes a lift and crimping mechanism 100, an opening and closing mechanism 200, a spacer mechanism 300, an upper junction plate mechanism 400, and a lower junction plate mechanism 500. do. These major parts are joined together and the combination is supported by the base plate 12 and the support frame 14. A control unit (not shown), which may include one or more closed control loops, may operate (eg, by a computer program) to control various components of the bonding device 10 as described in more detail below. have.

Although the operation of the bonding device 910 and any particular bonding process will be described in more detail later herein, a brief overview of such operation will now be introduced. In FIG. 1, the bonding apparatus 10 is in a closed state by covering the upper bonding plate machinery 400 close to the lower bonding plate machinery 500. In FIG. 2, the upper junction plate 400 is removed from the lower junction plate machine 500 so that the two sheets of material (eg, silicon donor wafer and glass substrate) to be bonded together into the device 10 are inserted. It can be operated to rotate up and down. Again, to illustrate, it is assumed that the silicon donor wafer includes a release layer that will be bonded to the glass substrate and later separated from the silicon donor wafer.

In this example, it is assumed that the silicon donor wafer is in contact with the upper junction plate machinery 400 during the bonding process, while the glass substrate is in contact with the lower junction plate machinery 500. For example, the glass substrate may be installed on the lower junction plate machinery 500 and the silicon donor wafer may be mounted with the upper junction plate machinery 400 (when the apparatus 10 is closed). The glass substrate may be installed to be in contact with the glass substrate. (However, it can be appreciated that this state can be reversed without departing from the scope of the various embodiments of the present invention.) In an alternative embodiment, the silicon donor wafer is characterized in that the upper junction plate machine 400 When in the open position, it may be coupled to the upper junction plate mechanism 400 by, for example, a clip, a chuck mechanism, a vacuum, or the like.

Generally, the upper junction plate machinery 400 supplies at least one of controlled heating, voltage and cooling to the silicon donor wafer, while the lower junction plate machinery 500 controls controlled heating, voltage and cooling. At least one of which may be operated to supply the glass substrate. The lift and squeeze mechanism 100 is operatively coupled to the upper and lower bond plate machinery 400, 500 and control of the silicon donor wafer relative to the glass substrate along its respective surface (such as an interface). It may be operable to tighten the first and second joining plate machinery 400, 500 towards each other to achieve a predetermined pressure. The control unit is configured to provide heating and voltage and pressure profiles sufficient to achieve anodic bonding between the silicon donor wafer and the glass substrate, and the upper and lower bonding plate machinery 400, 500, and the lift and crimp mechanism. Operate to generate control signals for 100. The control unit also generates control signals for the upper and / or lower joining plate machinery 400, 500 and controls the upper and / or lower joining plate machinery 400, 500. And can be actively cooled to facilitate separation of the exfoliation layer from the silicon donor wafer after bonding.

As shown in FIG. 2, after the upper junction plate mechanism 400 is rotated away from the lower junction plate mechanism 500 and the silicon donor wafer and the glass substrate are inserted therebetween, the upper Junction plate machinery 400 may be operable to rotate down (via the open and close mechanism 200) such that the upper light lower junction plate machinery 400, 500 is spaced apart. Thus, when the silicon donor wafer is placed on top of the glass substrate, the upper junction plate machine 400 will be spaced apart from the silicon donor wafer. Alternatively, the silicon donor wafer may be spaced apart from the silicon donor wafer when the silicon donor wafer is coupled (eg, by the clip, chuck, vacuum, etc.) described above. If the latter method is used, the individual heating of the silicon donor wafer and the glass substrate to a particular temperature (which may approach and / or exceed 1000 ° C.) results in the respective upper and lower junction plate machinery 400, 500 By controlled energy of If the former method is used, individual heating may be carried out after the full closure of the bonding device 10.

As shown in FIGS. 4A and 4B, the silicon donor wafer and the glass substrate may be in contact with each other under controlled actuation of the lift and crimp mechanism 100. The lift and squeeze machine 100 raises the lower junction plate machine 500 (and glass substrate) to such a position that controlled heating and pressure is achieved between the silicon donor wafer and the glass substrate. The silicon donor wafer and the glass substrate may also require a differential potential of about 1750 volt DC power source added by each of the upper and lower junction plate machinery 400, 500. The pressure, temperature difference and voltage difference are applied for a controlled time period. Thereafter, the voltage (which may involve active cooling) reaches zero and the silicon donor wafer and the glass substrate are allowed to cool, which at least begins separation of the exfoliation layer from the silicon donor wafer. While it will not be easy to believe, if separation between the release layer and the silicon donor wafer has not been completed from the cooling process, one or more machines or other mechanical devices may be used to assist the peel process.

A more detailed description of each component of the bonding apparatus 10 will now be described. 5 is a partially disassembled perspective view of the bonding apparatus 10. Thus, specific parts of the lift and crimping mechanism 100, the opening and closing mechanism 200, the spacer mechanism 300, and the upper and lower bonding plate machinery 400, 500 are easily identified. .

With further reference to FIG. 6, an embodiment of the wrist and crimping machine 100 will now be described. The lift and squeeze machine 100 is coupled to the lower junction plate machine 500 and with the silicon donor wafer facing each other along their respective surfaces to assist in anodic bonding of the silicon donor wafer and the glass substrate. It may be operable to urge the upper and lower bonding plate machinery 400, 500 towards each other to achieve a controlled pressure of the glass substrate. In this embodiment, the lift and crimping mechanism 100 is configured such that (i) the lower joining plate mechanism 500 of the lower joining plate machinery 500 is the upper and lower joining plate machinery 400, 500. Pre-loading the glass substrate vertically towards the upper junction plate mechanism 400 to achieve an initial pre-load position of the glass substrate and thus the silicon wafer. -loading) movement; And (ii) the pressure loading movement in which the glass substrate is pressed against the silicon donor wafer at a controlled pressure (which may also allow self-alignment between the glass substrate and the silicon donor wafer for virtually uniform pressure distribution). It can work to allow two basic movements:

The lift and crimp mechanism 100 includes a base 102, a first actuator 104, a second actuator 106, and a lower mount 108. The base 102 includes an upper surface 110 and a lower surface 112. The first actuator 104 may be coupled to the bottom surface 112 of the base 102, while the second actuator 106 may be coupled to the top surface 110 of the base 102. The lower mount 108 is coupled to the second actuator 106 such that the second actuator 106 is inserted between the base 102 and the lower mount 108.

The base 102 is slidable with respect to a number of guide posts 114, 116, 118 (three guide posts are shown, but fewer or more guide posts may be used). For example, the base 102 may include respective guide bushings 120, 122, 124 (where bushing 124 is not visible), each of which guide bushings 120, 122, 24. ) Is disposed coaxially in each guide post 114, 116, 118 so that the guide posts 114, 116, 118 can slide longitudinally within the guide bushings 120, 122, 124. Each of the guide posts 114, 116, 118 may be secured to a base plate 12 of the bonding apparatus by fasteners 130.

According to one or more embodiments, operation of the first actuator 104 is such that the lower junction plate mechanism 500 allows the upper and lower junction plate mechanisms 400, 500 (therefore the glass substrate and the silicon). It is possible to achieve the above-described pre-loading movement of moving toward the upper junction plate machine 400 through the lower mount 108 to achieve initial pre-load positioning of the donor wafer. This pre-loading movement may be coarse displacement of the lower junction plate mechanism 500 towards the upper junction plate mechanism 400. The first actuator 104 and the second actuator 106 may be configured such that the operation of the first actuator 104 informs the operation of the second actuator 106 and the lower joining plate mechanical device 500. It may be mounted in axial alignment with the junction plate machinery 500.

In more detail, the first actuator 104 may include a shaft 104A capable of operating the first actuator 104 to move up and down. The shaft 104A may be driven by any suitable device, such as an electromechanical solenoid, a hydraulic piston device, or the like. The up and down movement of the first actuator 104 can cause the corresponding movement of the base 102, whereby the planar direction of the base 102 allows them to slide within the guide bushings 120, 122, 124. Thereby retained by the guide posts 114, 116, 118. Movement of the base 102 results in corresponding movement of the second actuator 106, the lower mount 108, and the lower joining plate mechanism 500. The movement of the first actuator 104 by the shaft 104A may be mechanically, electrically and / or hydraulically restricted such that the pre-loading movement of the lower junction plate mechanism 500 is controlled. As shown in FIG. 6, the limited motion is substantially zero or the distance between each fastener 130 and the guide bushings 120, 122, 124 as compared to the remaining distance between them as shown in FIG. 3. Measured by D).

The second actuator 106 of the lift and crimping mechanism 100 provides a controllable force (e.g., superior movement compared to the uncertain movement described above) on the lower joining plate mechanism 500. It is operable, wherein the controllable force is substantially perpendicular to the bearing surface (such as the surface in contact with the glass substrate) of the lower junction plate machine 500. As the bearing surface of the upper joining plate machinery 400 is parallel to the bearing surface of the lower joining plate machinery 500, the second actuator 106 of the lift and crimping mechanism 100 is anodized. It ensures that no lateral force is applied (or even at least) between the silicon donor wafer and the glass substrate, which can cause scraping or other obstacles to the quality of the substrate.

The second actuator 106 is a bellows actuator operable to move the lower mount 108 up and down in response to a change in the internal hydraulic pressure (eg, liquid or gas pressure) of the bellows. Can be. The second actuator 106 may be independently controlled (relative to the first actuator 104) to achieve the aforementioned pressure loading movement in which the glass substrate is pressed against the silicon donor waiter. Accurate control of the second actuator 106 by the control unit (eg, pressure control in the bellows) can be used to establish a suitable pressure such as between the glass substrate and the silicon donor wafer for anode bonding. have. Also, the use of bellows in the second actuator is such that the lower mount 108, the lower junction plate mechanism 500, and the glass substrate are used for the upper junction plate mechanism 400 (and silicon donor wafer). Make it rich or self-aligned.

The lift and compaction mechanism 100 may also include a number of mounting elements, such as an upside post 140 coupled to the bottom mount 108. The mounting element 140 can operate to engage and engage the spacer mechanism 300 as described in more detail in this description.

As best shown in FIG. 5, the lift and compaction mechanism 100 may also include a position sensor 150 coupled to the bottom mount 108 and / or the bottom junction plate mechanism 500. have. The position sensor 150 is operative to supply an output signal to the control mechanism indicating the magnitude from which the lower junction plate mechanism 500 has been moved. For example, the output signal of the position sensor 150 may give an indication of where the above described coarse displacement of the lower junction plate mechanism 500 (towards the upper junction plate mechanism 400) occurs. Can supply This may provide indications such as initiating heating, preloading pressure, seeding voltage applications, and the like. The output signal of the position sensor 150 may additionally or alternatively provide an indication of the speed and / or acceleration of the lower junction plate machine 500. For those of ordinary skill in the art, the position, speed, acceleration, etc. of the lower junction plate mechanical device 500 is one obtained from the output signal of the position sensor 10 and 150 and the time base. It will be appreciated that it can be calculated by the control unit based on the above position measurement. For example, the position sensor may be implemented using a linear voltage differential transformer (LVDT), providing a varying amplified output signal as a function of the movable core of the transformer.

An embodiment of the opening and closing mechanism 200 will be described with further reference to FIG. 7. In this embodiment, the opening and closing mechanism 200 includes a lift assembly 202, an actuator assembly 204, a tilt assembly 206 and a mount assembly 208. The opening and closing mechanism 200 is coupled to the upper junction plate mechanism 400 (not shown in FIG. 7, see FIGS. 1 and 5) and is operable as follows: (i) in a closed state When, the movement of the lower junction plate machinery 500 toward the upper junction plate machinery 400 causes the lower junction plate machinery 500 to achieve a controlled pressure of the silicon donor wafer against the glass substrate. Assisting in holding the upper joining plate mechanism 400 in position with respect to (i) and (ii) supplying a double action open profile, wherein the first motion is substantially perpendicular to the respective bearing face The upper joining plate machine 400 from the lower joining plate machine 500 in a direction, and the second operation is performed by the upper joining plate machine Wherein the bearing surface of teeth 400 is inclined away from the upper joint plate to be inclined to the bearing surface of the lower bonding plate mechanism 500 of the lower bonding plate mechanism 500.

With respect to the dual action open profile, the lift assembly 202, the actuator assembly 204, the tilt assembly 206 and the mount plate 208 have the following two movements, (i) the base plate 12. Vertical movement of the mount plate 208 relative to it; And (ii) to achieve a tilting motion to rotate the mount plate 208 up relative to the base plate 12. Note that the upper junction plate mechanism 400 is operable to couple to the mount plate 208, wherein rotation of the mount plate 208 bonds the silicon donor wafer and the glass substrate to the upper and lower bonds. Allows access (as described above) for insertion into the bonding device 10 between the plate machinery 400, 500. The vertical movement of the mount plate 208 (and the upper joining plate machinery 400) allows an initial detachment operation, such as between the upper and lower joining plate machinery 400, 500, which are substantially completely vertical. This will allow separation without scraping on the side or otherwise damage the SOG structure. This feature will be described in more detail below.

The lift assembly 202 includes a base 210, a guide shaft 212, and a guide bushing 214. The base 120 may be operable to contact the base plate 12 directly or indirectly and to provide a strict reference from which the lift and tilt operation may begin. The guide shaft 212 is operably coupled to the base 210 and extends vertically toward the tilt assembly 206 and the mount plate 208. The guide bushing 214 may be operable to slidably engage the guide shaft 212. As will be described in more detail below, the sliding movement of the guide bushing 214 relative to the guide shaft 212 results in the vertical and rotational movement of the mount plate 208. The guide bushing 214 includes a fastening plate 216 that is operable to allow mechanical fittings to the actuator assembly 204.

The actuator assembly 204 may be operable to provide a vertical force to the fastening plate 216 of the guide bushing 214 and again to obtain the lift and tilt motion of the mount plate 208. Such controlled sliding of) is achieved. In one embodiment, the actuator assembly 204 includes a jack 230, such as a Duff-Norton jack, a shaft 232 connected to the jack 230, and the guide bushing 214. Coupling element 234 in contact with the fastening plate 216 of FIG. In the above embodiments, the duff-none jack 230 is adapted such that the application of rotational force on the shaft 236 causes the vertical movement of the shaft 232 and the resulting vertical movement of the guide bushing 214. It can work. The operation of the jack 230 may be controlled through a control unit such as by using a mechanical motor to rotate the shaft 236.

The mount plate 208 may include a first end 240 operable to engage the upper junction plate mechanism 400, and a second end 242 operatively coupled to the tilt assembly 206. have. In this embodiment, the tilt assembly 206 includes a hinge plate 250 (described in more detail below) that couples the mount plate 208 to the lift assembly 202. The tilt assembly 206 also includes first and second stop arms 252 and 254 and pivoting linkages of the hinge plate 250 relative to the mount plate 208. The stop arms 252 and 254 are coupled to the base plate 12 at their first ends and to the mount plate 208 at their second ends. The stop arms 252, 254 are not capable of vertical movement (relative to the base plate 12) but permit rotational movement of the second end relative to the first end such that the base plate 12 is allowed at the first end. It can be coupled to rotate. Each of the stop arms 252, 254 may be operable to receive a corresponding roller or post 244 extending laterally from the second end 242 of the mount plate 208.

The mount plate 208 is operatively coupled to the hinge plate 250 by the pivoting fitting. More specifically, the hinge plate 250 includes a block 260 that extends at least partially into the opening 245 of the mount plate 208. The pivoting fitting 258 causes the mount plate 208 to pivot or rotate relative to the pivoting fitting 258. The opening 245 may be sized and shaped to allow the block 260 to pivot within the opening 245 without interference.

In response to the operation of the jack 230 (eg, through the application of rotational force to the shaft 236), the shaft 232 may raise or lower the guide bushing 214. In the illustrated state, the guide bushing 214 rises in response to the above-described operation, thereby imparting a vertical motion with respect to the hinge plate 250. In response, the hinge plate 250 exerts a vertical force on the mount plate 208 by the block 260 and the pivoting fitting 258. In particular, the mount plate 208 is such that the bearing surfaces of the upper and lower joining plate machinery 400, 500 are substantially parallel over virtually all limited travel of the upper joining plate machinery 400 during a lift operation. Is moved by the block 260.

The vertical force applied by the hinge plate 250 to the mount plate 208 is such that the rollers or pins 244 of the mount plate 208 are positioned within each slot 256 of each stop arm 252, 254. Let's move up. The mount plate 208 will thus rise vertically away from the base plate 12 while maintaining a substantially parallel relationship therewith. Vertical upward movement (or lift) occurs when the roller or pin 244 of the mount plate 208 is caught in the upper limit in the slot 256 while maintaining substantially parallel to the base plate 12. Will continue for limited travel distance. When the roller or pin 244 reaches this limit, the continued lifting force on the mount plate 208 by the block 260 causes the first end 240 of the mount plate 208 to be pivoted to the pivoting fitting. Tilt up in response to a rotational motion about 258. (Slight rotational movement of the stop arms 252 and 254 relative to the first end to account for the horizontal movement of the pivoting fitting 258.) The angle that the mount plate 208 tilts is the angle It can be adjusted by a stop 257 located at the distal end of the stop arms 252 and 254. For example, the stop 257 can include a threaded rod and a nut, where the threaded rod can enter and engage the interlocked slot 256 by varying the amount. This adjustment within the usable length of the slot 256 is allowed within the allowable travel of the roller or pin 244 and within the angle at which the mount plate 208 is tilted.

The reversal of the actuator assembly 204 is in a substantially parallel direction to the base plate 12, which is followed by a vertical downward movement when the mount plate 208 remains substantially parallel to the base plate 12. This results in the mount plate 208 tilting down. The parallel direction of the mount plate 208 may be adjusted by one or more stops 259 of the hinge plate 250. For example, the stop 259 may include threaded bolts that may be threaded into and out of the hinge plate 250 to provide an adjustable resting position for the mount plate 208. Can be.

The first end 240 of the mount plate 208 is also preferably the upper ends 114A, 116A, 118A of the guide posts 114, 116, 118 of the lift and crimping mechanism 100 (FIG. And a plurality of locks 246 operable to engage and engage. For example, the lock 246 can be implemented using a screw bolt that can be assembled manually. When the mount plate 208 is lowered to the position shown in FIGS. 4A and 4B, the lock 246 causes the lift assembly to be subjected to excessive force on the silicon donor wafer and upper junction plate machinery 400. 202, the actuator assembly 204 or the tilt assembly 206 is ensured without being exposed by the mount plate 208.

The first end 240 of the mount plate 208 also includes a number of openings through which various wires, cables, and conduits can be passed, as described in more detail below.

Reference is made to FIGS. 8A and 8B, which provide more details about the upper junction plate mechanism 400. FIG. 8A is a perspective view of the upper joining plate machinery 400, while FIG. 8B is a cross sectional view thereof. Since the bonding device 10 is symmetrical, the functional and / or structural details of the upper bonding plate machine 400 can be readily applied to the lower bonding plate machine 500 (as described below). It can be seen that.

The primary components of the upper junction plate machine 400 are the base 402, the insulator 404, the back plate 406, the heater disk 408, and the heat dissipation plate ( thermal spreader 410. Primary functions of the upper junction plate machine 400 include heating the silicon donor wafer, supplying pressure to the silicon donor wafer, supplying potential to the silicon donor wafer, and cooling the silicon donor wafer. do.

The heater function originates from the heater disk 408 and is operable to provide a temperature below or above about 600 ° C., and may be close to or exceed a temperature of 1000 ° C. This embodiment of the upper junction plate machine 400 is also operable to provide heat uniformly within +/- 0.5% of the controlled set-point over virtually the entire silicon donor wafer.

The pressure imparted to the silicon donor wafer by the upper junction plate machinery 400 is substantially evenly distributed over the wafer by the heat dissipation plate 410 (provided by the lower junction plate machinery 500). The glass substrate provides a counter-force to the upward pressure. This results in a pressure profile at the interface of the glass substrate suitable for anodic bonding with the silicon donor wafer. The pressure profile may comprise a peak pressure between at least about 1 psi to 100 psi by controlling the elevated pressure provided by the lower junction plate mechanism 500 (eg, under the control of the control unit). Low pressures (eg, about 20 psi) between about 10 to 50 psi are believed to be advantageous by making them less brittle of the silicon donor wafer or the glass substrate.

As mentioned above, the silicon donor wafer and the glass substrate require a differential voltage of about 1750 volts DC, which is provided by each of the upper and lower junction plate machinery 400. This potential can be achieved by (i) applying a potential to one of the silicon donor wafer and the glass substrate (while the other is grounded); Or (ii) by applying each potential to both the silicon donor wafer and the glass substrate (so that a positive potential is applied to the silicon donor wafer and a negative potential to the glass substrate). Thus, the ability of the upper junction plate mechanism 400 to impart a potential (not ground) to the silicon donor wafer is an additional feature. When a bonding potential (not ground) is applied to the silicon donor wafer by the upper junction plate machine 400, such a bonding potential is distributed substantially uniformly over the entire surface of the wafer by the heat sink 410. Can be.

While the invention is not limited to any theory of operation, it can be appreciated that there may be a general relationship between junction voltage, temperature, time, and material properties. For example, as the junction voltage decreases, the temperature, time, and / or amount of conductive ions (eg, of the glass substrate) can be increased in a trend that follows at least the same junction result. The relevance is also that the temperature, time and / or amount of conductive ions are independent variables. The junction potential between the silicon donor wafer and the glass substrate can be measured using peak value, average value, RMS, or other measurement agreement. Junction voltages in the range of about 1000 volts DC to about 2000 volts DC are suitable for certain types of glass substrates.

If active cooling of the silicon donor wafer is desired, such may be accomplished using controlled fluid flowing through the upper junction plate mechanism 400. These and other features of the upper junction plate mechanism 400 will be described in more detail below.

The base 402 of the upper junction plate mechanism 400 is substantially cylindrical in structure and defines an interior volume for receiving the insulator 404. For example, the base 402 may be formed from a glass moldable glass ceramic (eg, MACOR), providing high temperature properties as well as structural integrity. Other suitable materials may additionally or alternatively be used to form the base 402. The insulator 404 is operable to limit or hinder heat flowing from the heater disk 408 to the base 402 (and other portions of the bonding apparatus 10). For example, the insulator 404 may be formed from a ceramic foam insulating material, such as silica mixed at a 40% density. Other suitable insulating materials may additionally or alternatively be used. The insulator 404 must be able to provide significant insulating properties because the heater disk 408 is operable to reach temperatures above or above 600 ° C., ie 1000 ° C. It can be seen that insufficient insulation that causes significant heat to flow to the base 402 can have catastrophic consequences by proper operation of the other parts of the bonding device 10. In addition, relatively high insulation, such as between the base 402 and the heater disk 408, ensures relatively low thermal inertia of the upper junction plate mechanical device 400, thereby achieving rapid thermal cycling characteristics. Help.

The back plate 406 is insulated from the base 402 by the insulator 404. The back plate 406 is feasible to provide at least one cooling channel 420 through which cooling fluid can flow if it is desired to actively reduce the temperature of the SOG structure, particularly the silicon donor wafer. For example, the back plate 406 may be hot pressed boron nitride (HBN) to withstand high temperatures and relatively rapid temperature changes (as is the case when a cooling fluid is introduced into the channel 420). Can be formed from. Other suitable materials may additionally or alternatively be used to form the back plate 406. At least one inlet tube 422 is operable to introduce cooling fluid into the channel 420, while at least one outlet tube 424 (not shown in FIG. 8B, see FIG. 11B as described below). Is operable to remove the cooling fluid from the channel 420. A heat exchanger (not shown) can be used to cool the cooling fluid before reintroducing the cooling fluid into the inlet duct 422.

It can be achieved by controlling the temperature and flow rate of the cooling fluid through the channel 420 using a control unit. For example, the cooling profile of the upper junction plate mechanism 400 may be provided (eg, to provide at least one of varying the cooling rate for the silicon donor wafer and varying the cooling level (eg, rest). By the control unit). It is believed that various provisions of cooling profiles for the silicon donor wafer and the glass substrate each facilitate better separation of the exfoliation layer from the silicon donor wafer. In particular, the active cooling feature of the upper junction plate mechanism 400 is that the lower junction plate mechanism 500 (such as described in more detail below) has a different cooling profile, such as between the silicon donor wafer and the glass substrate. It is optional because it can be achieved through active cooling of the glass substrate (but not the silicon donor wafer).

A cap ring 426 (see FIG. 8B) not only retains the insulator 404 at a location within the base 402 but also a recess in which the heater disk 408 can be disposed. Is operable to provide. The cap ring 426 may be formed from a machine moldable glass ceramic (such as MACOR described above).

The heater disk 408 is operable to generate heat in response to electrical excitation (voltage and current), while no potential applied to the silicon donor wafer is also applied to the back plate 406 or the base 402. To provide electrical insulation properties. In practice, the relatively high potential applied to the silicon donor wafer can be limited. Thus, the heater disk 408 may be formed from a material that exhibits substantially electrical insulating properties and substantially thermal conductivity. One such suitable material is pyrlytic boron nitride (PBN).

9A and 9B, two embodiments of a heater disk design suitable for implementing the heater disk 408 are shown. 9A is a perspective view of the first heater disk 408A, while FIG. 9B is a perspective view of an alternative second heater disk 408B. Since substantially uniform heating is required, the heater disks 408A and 408B may include heat loss compensation, thereby allowing the outer portion of the heater disks 408A and 408B to cool more than its central portion. This can be In the illustrated embodiments, the edge heat loss compensation of the heater disks 408A, 408B is achieved using two heating zones, one substantially centered and the other in the form of an annular ring around the central region. Can be. The heating zone can be implemented using each heating element.

The heater disk 408A of FIG. 9A includes two separate heating elements 409A and 409B, where the heating element 409B is substantially centered and the heating element 409A is annular around the ring heating element 409B. It is in the form of. Each heating element 409A, 409B includes a pair of terminals 411A, 411B to which each power source can be connected. The voltage and current excitation from each power source to the heater elements 409A, 409B of the heater disc 408A allow the respective temperatures of the two heating zones to be individually controlled and the edge heat loss compensation to be achieved. Can be controlled individually through

The heating elements 409A and 409B may be formed from pyrolytic graphite (PG), THERMAFOIL, or the like. THERMOFOIL material is a thin film, soluble material having heating properties, and may include an etched thin film resistive element laminated between flexible insulating layers. THERMOFOIL may exhibit better reliability in vacuum environments, and non-vacuum environments (which may include one or more oxidants, such as atmospheric environments) are also contemplated herein. In the non-vacuum state, the heating elements 409A and 409B have a high strength austenitic nickel-chromium-ion alloy having good anti-corrosion and heat-resistance characteristics. It may be formed from INCONEL, including a group of nickelchromium-iron allys.

In one or more embodiments, the heater elements 409A and 409B may be vertically offset to help compensate for edge heat loss. For example, the heater element 409B in the central region may be located toward the bottom surface of the heater disk 408A, while the heater element 409A in the annular region is on the top surface of the heater disk 408A. Or it may be disposed toward the upper surface. This is due to the heat between the heater element 409A and the silicon donor wafer at the periphery of the heater disc 408A compared to the thermal resistance between the heater element 409B and the silicon donor wafer at the center of the heater disc 408A. Reduce resistance. The offset feature can be achieved by inserting a spacer element (not shown), for example, a sheet of material between the heater elements 409A, 409B. This may also cause the terminal 411B to be excited horizontally rather than downwardly, as shown in FIG. 9A.

The heater disk 408B of FIG. 9B includes an integrally formed, adjacent heating element that operates as though having individual heating elements 409C, 409D. In particular, the width (and / or thickness) of the resistive material used to form the heating element varies with its position in the heater disk 408B. For example, the width of the heating element at the peripheral position 409C is lower than the width of the heating element at the central position 409D. The change in the width of the heating element changes the resistance of the heating element (and thus the heating characteristic) as a function of position. By varying the resistance of the integrated heating element as a function of position from the central region of the heater disk 408B, only single voltage and current excitation are required to achieve the edge heat loss compensation. Indeed, the integrated heater element will react (heat) differently in response to excitation voltages and currents due to resistance changes of the integrated heater element in regions 409C and 409D.

Regardless of the heater element configuration, the resistance of the heating element (s) can be on the order of 10-20 ohms (eg, about 15 ohms). In order to achieve the above-described heating level of approximately 600 ° C. to 1000 ° C., a voltage of about 220 volts (AC) can be applied across the heating elements, which causes a heat loss on the order of about 3250 watts RMS.

In one or more embodiments, the heater disk 408 exhibits relatively low thermal inertia due to at least some of the choices of materials and configurations. The heater disc can be measured about 2 mm thick using the materials and configurations described above. The relatively low thickness (compared to conventional heating element measurements 1-2 inches thick) contributes to the low heat accumulator and thermal inertia, which helps to achieve rapid thermal cycling characteristics.

The heat sink 410 is operable to incorporate the heating profile represented by the heater disk 408 such that it is in thermal communication with the heater disk 408 and a more uniform heat is imparted to the silicon donor wafer. The heat dissipation plate 410 is in direct contact with the silicon donor wafer and can be electrically and thermally conductive by facilitating the wafer heating and the application of the high voltage described above.

Among the materials that can be used to implement the heat dissipation plate 410, electrically conductive graphite such as THERMAFOIL is preferred. In a non-vacuum state (e.g., atmosphere), the heat spreader plate 410 is made of copper (non-electrodepositable nickel, platinum, molybdenum, Non-oxidized electron-thermally conductive elements such as THERMOFOIL with a non-oxidizing coating (such as tantalum) and KEVLAR (with or without coating) silicon carbide (such as non-electrodepositable nickel, platinum, molybdenum, tantalum, etc.) It may be formed from other materials that can be more reliable in an oxidizing environment such as.

In one or more embodiments, the heat sink 410 also exhibits relatively low thermal inertia, at least in part due to the choice of material and composition. The heat dissipating plate 410 may measure a thickness of about 0.5-6 mm using the materials and composition details described above.

The relatively low thickness of the heater disk 408 and the heat dissipation plate 410, coupled with the high insulation properties indicated by the insulator 404 and the other material choices described above, results in the upper junction plate machinery 400 To very low heat accumulators and thermal inertia. Thus, the upper junction plate machine 400 can heat the material thin film from room temperature to about 1000 ° C. in approximately two minutes and cool the material thin film to room temperature within about 10 minutes or less. This is in comparison to conventional substrate heaters, which may take 30 minutes to 1 hour to raise the material thin film from a room temperature of only about 600 ° C. and about 20 minutes to cool the material thin film to room temperature.

The control unit is operable to program the upper junction plate machine 400 to cause the lamp to rise or cool to any predetermined temperature and to remain at any predetermined processing temperature.

As shown in FIG. 8A, the upper junction plate machine 400 includes an opening that allows access to the silicon donor wafer during the bonding process, for example, to impart a pre-charge voltage to the wafer. 450). These optional features will be described in more detail after this description.

FIG. 10 shows an exploded view of the upper junction plate mechanical device 400 (excluding the base 402 and the insulator 404). As shown in the exploded view, the upper junction plate machine 400 includes a support ring 430, a gasket 434, a heater disk 408, and a heat sink 410. It is a multilayer assembly comprising a. The support ring 430 provides support for the back plate 406 and for the gasket 432. The back plate 406 is inserted between the gasket 432 and the gasket 434 and operates to prevent cooling fluid from leaking as it flows through the channel 420. Among the materials from which the gaskets 432 and 434 can be formed, GRAFOIL ring materials are preferred because they exhibit suitable sealing and heating resistance properties. The heater disk 408 covers the gasket 434 and the heat dissipation plate 410 is disposed on the heater disk 408. Each layer of the upper junction plate machine 400 may be coupled to each other using bolts.

In one or more embodiments, the back plate 406 may include a single, adjacent channel 420 or multiple individual channels 420. As shown in FIG. 10, the back plate 406 may include two separate channels 420, each receiving cooling fluid through each individual inlet 406A, 406B, and having a common outlet ( Discharge the cooling fluid through 406C). Dual cooling channels 420 ensure even more cooling across the heat sink 410 (and thus the silicon donor wafer).

In particular, the heat radiating plate 410 includes a plurality of fins 436 extending radially outward from the peripheral edge of the heat radiating plate 410. The fins 436 provide a peripheral surface that is used to hold the heat sink 410 in position and to provide a connection to a high power source. As best seen in FIG. 8B, the fins 436 are engaged by respective securing clips 440 and prevent the movement of the heat sink 410. Preferably, the securing clip 440 may be formed from a mechanizable glass ceramic (eg, MACOR), thereby providing electrical insulation and good structural integrity.

As mentioned above, the upper junction plate mechanical device 400 includes individual openings of the base 402, the insulator 404, the back plate 406, the heating disk 408, and the heat sink 410. It may optionally include an opening 450, which may be implemented by 450. The opening 450 may be centered so that a central region (eg, its center) of the silicon donor wafer can be obtained. The use of access to the silicon donor wafer provided by the opening 450 will be described in more detail below.

Reference is made to FIGS. 11A, 11B and 11C, which also present structural and functional aspects of the upper junction plate mechanism 400. 11B and 11C are cross-sectional views cut through lines 11B-11B and 11C-11C, respectively. As shown in FIG. 11C, excitation voltages and currents are applied to the heater disk 408 by terminals 452 extending through the base 402, the insulator 404, and the back plate 406. Can be. The number of terminals 452 will depend on how many heating elements are used in the heating disk 408 and how they are implemented in the heating elements. As mentioned above, in one or more embodiments, two heating elements may be used such that the excitation voltage and current can be individually controlled through the control unit so that the temperatures of the two heating zones can be tightly regulated. Alternatively, the heating element can be integrated (using a variable resistor) so that a single excitation voltage can be used for temperature control and edge loss compensation.

As best shown in FIG. 11B, each fluid coupling 460 is connected to the inlet tube (s) 422 and outlet tube (s) to allow connection of a fluid source (not shown) to the upper junction plate mechanism 400. 424). In particular, the inlet 422 and outlet 424 extend far enough from the base 402 to pass through the opening of the mount plate 208.

As shown well in FIGS. 11B and 11C, a relatively high potential (eg, relative to the heater voltage) may cause the base 402, the insulator 404, the back plate 406, and the heater disc. It may be applied to the heat sink 410 by a high voltage terminal 453, extending through 408. As described above, the voltage applied to the heat dissipation plate 410 (which may be about 1000 to 2000 volts DC) is used to assist the anodic bonding of the silicon donor wafer to the glass substrate.

Although not shown, the upper junction plate mechanism 400 also includes the heat dissipation plate 410 through the base 402, the insulator 404, the back plate 406, and the heater disk 408. It may include one or more vacuum conduits extending to. When used, the vacuum conduit is coupled to the heat sink such that the wafer is coupled to the heat sink 410 when the upper junction plate mechanism 400 is in the rotated (open) position as shown in FIG. 2. Allow vacuum application to the silicon donor wafer when positioned against publication 410. The vacuum application can be achieved using a conventional vacuum source (not shown) which is manually controlled through the control unit or by an operator of the bonding apparatus 10.

As described above, the upper junction plate machine 400 may optionally include an opening 450 that allows access to the silicon donor wafer during the bonding process. When the opening 450 is used, its preferred use allows for preload pressure and / or seed voltage to be applied to the silicon donor wafer prior to application of the junction voltage. The purpose of the preload voltage and the seed voltage is to initialize the anode voltage at the local of the interface between the silicon donor wafer and the glass substrate prior to application of the junction voltage, and to establish an anode junction over substantially the entire area of the interface. To facilitate. However, the seed voltage may be the same or different magnitude depending on the junction voltage, but a small or the same voltage is not considered to be dependent on, for example, 750-1000 volts DC. The opening 450 may be centered such that the initial anodic junction occurs at or near the center of the interface between the silicon donor wafer and the glass substrate.

Reference is made to FIGS. 12A, 12B and 13, which illustrate a suitable device for achieving the correlation of the preload pressure and seed voltage described above. 12A shows a side view of a preload plunger 470 operable to engage the upper junction plate mechanism 400 and extend through its opening in mechanical and electrical communication with the silicon donor wafer. do. FIG. 12B is a cross-sectional view of the preload plunger 470 of FIG. 12A, while FIG. 13 shows the upper and lower junction plate machine with the preload plunger 470 coupled to the upper junction plate mechanism 400. A cross-sectional view of the apparatus 400, 500. The preload plunger 470 includes a housing 472 having a proximal end 474 and a distal end 476. An electrical terminal 478 is disposed at the proximal end of the housing 474 and provides a means for connecting a voltage source from which the preload potential is obtained. Plunger 480 is partially disposed within housing 472 and extends through distal end 476 of housing 472. The plunger 480 is slidable within the housing 472 in a telescoping manner. The plunger 480 includes a stop 482 at one end to prevent the plunger 480 from passing through all the way through the distal end 476 and disengaging from the housing 472. An electrode 484 is disposed coaxially within the plunger 480, and a tip 486 of the electrode 484 extends beyond the distal end of the plunger 480. (The tip 486 abuts the silicon donor wafer, as described in more detail below.)

The first compression spring 488 mechanically moves the electrode 484 and the terminal 478 such that the sliding movement of the plunger 480 does not interfere with the electrical connection between the terminal 478 and the electrode 484. And electrically coupled. The first compression spring 488 also tightens or biases the electrode 484 (and the plunger 480) in the forward direction so that the stop 482 engages the housing 472. A second compression spring 490 also tightens the plunger 480 in the forward direction so that the stop 482 engages the housing 472 and biases the extended plunger 480 and the electrode 484. . The axially directed forces on the electrode 484 and the plunger 480 are such that each compression spring allows the tip 486 of the electrode 484 to face the silicon donor wafer and maintain electrical contact with the silicon donor wafer. Absorbed by (488, 490). In one or more embodiments, the electrode 484 can slide within the plunger 480 such that the plunger 480 is also biased and applied toward the preload pressure on the silicon donor wafer.

In a preferred embodiment, the tip 486 of the electrode 484 causes the lift and compaction machine device 100 to coarsely drive the lower junction plate mechanism 500 towards the upper junction plate mechanism 400. When placed, it is in contact with the donor wafer (eg, as shown in FIGS. 4A-4B before the bonding apparatus 10 is fully closed), which causes the heat dissipation plate 410 of the upper bonding plate mechanical device 400 to be disposed. Extend down. Thus, the application of the preload pressure and seed voltage can initiate an anodic bonding of the silicon donor wafer and the glass substrate before full pressure, temperature and transfer are applied.

Similar to the application of the junction voltage to the silicon donor wafer and the glass substrate, the seed potential is (i) applying a voltage to one of the silicon donor wafer and the glass substrate, while the other is grounded. ; Or (ii) applying a potential to both the silicon donor wafer and the glass substrate, respectively. Thus, although an initial fold in the local portion of the interface between the silicon donor wafer and the glass substrate is required, the ability of the upper junction plate machine 400 to impart a seed potential to the silicon donor wafer is an optional feature. Indeed, as described later in this description, the seed potential can be applied to the glass substrate by the lower junction plate machine 500 (while the silicon donor wafer is grounded).

The preload pressure and seed voltage may be applied as described above, but limit the contact area of the silicon donor wafer and the glass substrate, while the preload pressure and seed voltage limit the area where pre-bonding is allowed. It is preferable to apply in order to. In this regard, the spacer mechanism 300 can be used in combination with the preload plunger 470 described above. Generally, the spacer machine 300 is coupled to the lower junction plate machine 500 (see FIGS. 1 and 5) and the silicon donor wafer and the glass substrate when pre-bonding is achieved in its central region. It is operable not to touch the peripheral edges of each other. After the pre-bonding is achieved, the spacer machine 300 allows the silicon donor wafer and the glass substrate to touch each other (including its peripheral edges) during the entire bonding process to be performed.

Reference is made to FIG. 14, which is a perspective view of the spacer mechanism 300. The spacer mechanism 300 is operable to mechanically assist in holding the silicon donor wafer and the surrounding area of the glass substrate away from each other during application of the preload pressure and seed voltage. In one or more embodiments, the spacer mechanism 300 is operable to provide a symmetrical (multi-position) shim action as between the silicon donor wafer and the glass substrate.

The spacer mechanism 300 is substantially annular in configuration and includes a mount ring 302, a swivel ring 304, and a number of shim assemblies 306. The mount ring 302 has a substantially annular configuration that includes a central opening 308 and a peripheral edge 310. A number of mounting elements 312 (such as openings) are disposed relative to the peripheral edge 310 and are complementary to the mounting element 140, with the upwardly facing post 140 (FIG. 1, 5 and 6). The size, shape and position of the mounting elements 140 and 312 are the size, shape and position at which the mounting ring 302 can be coupled to the lower mount 108 of the lift and compression mechanism 100. In the illustrated embodiment, the mount ring 302 cannot rotate relative to the lower mount 108 of the lift and compaction mechanism 100.

The rotating ring 304 is also in a substantially annular configuration and further defines the central opening 308. The rotatable ring 304 is rotatably coupled with the mount ring 302, and thus may rotate relative to the mount ring 302 and the lower mount 108 of the lift and compaction mechanism 100. The rotary ring 304 includes a plurality of cams 320 (eg, cam slots) disposed at its peripheral edge, one such cam (at each seam assembly 306). 320). One of the cams 320A is geared, including a plurality of teeth in a pitch corresponding to the gear 142 of the stepper motor 144 of the lift and crimping machine 100. (geared) cam (see FIG. 6). As the stepper motor 144 rotates the gear 142, the rotary ring 304 rotates relative to the mount ring 302 and the lower mount 108 of the lift and compression mechanism 100. . The control unit may provide drive excitation to the stepper motor 144 to obtain an accurate rotational motion of the rotary ring 304.

Each shim assembly 306 may include a shim 330 coupled to the slide block 332. The shim 330 is sized and shaped to fit between the silicon donor wafer and the glass substrate, respectively. The shim is operable to achieve radial in and out motion with respect to the center region of the spacer mechanism 300 (and thus the center region of the interface between the silicon donor wafer and the glass substrate). This radial movement is achieved by a slidable engagement between the slide block 332 and the mount ring 302. For example, each shim assembly may include one or more guide bushings 334 that are slidably engaged with corresponding one or more pins 336. The pin 336 is configured to allow the sliding movement of the guide bushing 334 along the pin 336 to cause the slide block 332 and the shim 330 to have the above-described radial movement of the mount ring 302. It may extend radially far from the peripheral edge 310.

Each slide block 332 also includes cam guides (not shown), such as rollers or posts, which engage each cam slot 320. Rotation of the rotary ring 304 (via the operation of the stepper motor 144) causes each slide block 332 to slide in a controlled manner along the post 336 (via the guide bushing 334). Apply radial force to Thus, all shims 330 move in symmetrical motion, which prevents any non-uniform frictional load, such as between the silicon donor wafer and the glass substrate. It is noted that the rotation of the rotary ring 304 can be accomplished using other operating means such as pneumatic cylinders, linear motors, solenoid devices and the like.

The shim 330 is preferably electrically insulated such that the potential (s) of the SOG are coupled with the mount ring 302 and other portions of the bonding apparatus 10. For example, the slide block 332 may be formed of a ceramic material. The mount ring 302 and the rotating ring 304 may be located below the high temperature heating zone of the lower junction plate machine 500, protecting them from overheating input.

As best seen in FIG. 11A, the upper junction plate mechanical device 400 may further include one or more openings to allow access to the heater disk 408. For example, a first opening 454 may be connected to the control unit where it thermally engages the heater disk 408 (allowing precise temperature control of the heater disk 408 and the silicon donor wafer). The insertion of a thermocouple may be allowed through the assembly to provide a temperature feedback signal. It is noted that the opening 454 extends from the rear of the upper joining plate mechanism as shown in FIG. 11A and is therefore shown in dashed lines. A second opening 456 may also be included (also from the rear) to provide additional access to the heater disk 408 for better heat regulation. In particular, the first opening 454 is disposed in the region of the central heating element of the heater disk 408, while the second opening 456 is in or near the annular heating element of the heater disk 408. Is placed. This allows control of the feedback and energy signals independent of the respective center and annular heating elements (unless they are formed integrally), thereby allowing compensation for temperature regulation as well as thermal edge effects.

15 is a perspective view of a thermocouple assembly 494 that may be used to extend through the openings 454 and 456 and engage the heater disk 408. The thermocouple assembly 494 includes a standard thermocouple plug 495, a spring assembly 496, and a probe 498. The probe 498 is clamped forward by the spring assembly 496 to be biased against the heater disk 408, thereby ensuring proper thermal conductivity between them.

Structural details of one or more embodiments of the lower joining plate machinery 500 will now be described. The primary function of the lower junction plate machinery 500 is complementary to the function of the upper junction plate machinery 400, namely the heating of the glass substrate, providing pressure to the glass substrate, and cooling the glass substrate.

According to one or more embodiments, the lower joining plate machinery 500 may include many features of the embodiments of the upper joining plate machinery 400 described above. For example, in the embodiment shown in FIG. 13, the upper and lower joining plate machinery 400, 500 has the upper joining plate machinery 400 having the opening 450 and the preload plunger 470. , While the lower junction plate machine 500 is not used, in fact the same.

The heating function of the lower junction plate machine 500 is operable to provide a temperature less than or greater than about 600 ° C., and may be close to or exceed the temperature of 1000 ° C. The lower junction plate machine 500 can be operated to provide heating evenly within +/- 0.5% of a controlled reference value over virtually the entire glass substrate. The potential (about 1750 volts DC) may be selectively applied to the glass substrate by the lower junction plate machine 500 and may be distributed substantially uniformly over the entire surface of the substrate. Alternative embodiments of the lower junction plate machine 500 may provide for active cooling of the glass substrate using a controlled flow rate.

The embodiment of the lower joining plate machinery 500 shown in FIGS. 16-21 includes similar features according to the upper joining plate machinery 400 described above, but the lower joining plate machinery 500 may also be It can include some other features. FIG. 16 is a perspective view of the lower joining plate machinery 500, while FIG. 17 is an exploded view of the same. The primary components of the lower bonded plate machine 500 include a base 502, an insulator 504, a heater disk 508, and a heat sink 510. These elements are disposed within the housing 506 and are coupled to or supported by the housing 506, and may be formed, for example, from stainless steel.

The base 502 is coupled to the bottom of the housing 506, thereby forming a substantially cylindrical structure that defines an interior volume for receiving the insulator 504. For example, but not by way of limitation, the base 502 may be formed from a mechanically moldable ceramic material (eg, a mechanically moldable alumina silicate Cotronics 902), and not only structural integrity but also high temperature properties. To provide. The insulator 504 is operable to limit heating from the heater disk 508 to the base 502, the housing 506, and other portions of the bonding apparatus 10. For example, but not by way of limitation, the insulator 504 may be formed from a ceramic foam insulating material, such as silica mixed at a 40% density. The thermal insulation characteristic of the insulator 504 prevents heating from flowing from the heating disk 508 to the base 502 (and other components) and for the rapid thermal cycling characteristics the junction plate machinery 500 Should provide relatively low thermal inertia.

The heater disk 508 and the insulator 504 may be bonded together using a ceramic adhesive, such as Cotronics RESBOND 905.

The heater disk 508 generates heat in response to electrical excitation (voltage and current), while electrical so that any voltage applied directly or indirectly to the glass substrate is not applied to the base 502 or the housing. Is operable to provide insulating properties. Thus, the heater disk 508 may be formed from a material that exhibits substantially electrical insulating properties and substantially thermal conductivity.

Referring to FIG. 18, the heater disk 508 may be formed from a resistive heater layer 508B sandwiched between two (or more) electrically insulating layers 508B. For example, but not by way of limitation, the resistive heater layer 508A may be formed from THERMAFOIL rolled graphite and the electrical insulation layer 508B may be formed from fused silica. The resistive heater layer 508A and the electrically insulating layer 508B may be bonded together using a ceramic adhesive, such as Cotronic RESBOD 905 (which exhibits low thermal expansion properties).

As virtually uniform heating is required, the heater disk 508 may include thermal edge loss compensation. In this embodiment, the heater disc 508 may include two heating zones, one in a substantially centrally located zone and one in the form of an annular ring around the central zone. The heating zone may be implemented within the resistive heater layer 508A. For example, the resistive heating zone can be formed by varying the resistive width of the resistive material as a spiral material out from the center of the layer 508A. This results in a change in the resistance of the material (and thus the heating properties) that depends on the radial distance of the helical material out from the center of the layer 508A. This allows the use of single voltage and current excitation to achieve the thermal edge loss compensation because the heater element will respond (heat) differently to the excitation voltage and current due to the difference in resistance as a function of radial position. .

The voltage and current excitation for the resistive heater layer 508A is provided by a power source (not shown) and controlled by the control unit to achieve temperature regulation (which may use feedback control as described below). The control unit may be operable to program the lower junction plate mechanical device 500 to heat or cool the lamp to any desired temperature and to stay at any desired processing temperature. Terminal 552 (FIGS. 16-17) and terminal 508C (FIG. 18) allow electrical contact from the power source to the resistive heater layer 508A.

The heat sink 510 is operable to integrate the heating profile provided by the heater disk 508 so that it is in thermal communication with the heater disk 508 and a more uniform heating is imparted to the glass substrate. The heat dissipation plate 510 may have both electrical and thermal conductivity by directly contacting the glass substrate to facilitate heating the substrate and selectively applying a junction voltage thereto. Again, the junction voltage applied to the silicon donor wafer and the glass substrate may be: (i) applying a potential to one of the silicon donor wafer and the glass substrate (while the other is grounded), or (ii) the silicon donor This can be accomplished by applying a potential to both the wafer and the glass substrate, respectively. Thus, the ability of the lower junction plate machine 500 to impart a potential (not ground) to the glass substrate is an optional feature. If a bonding potential (not ground) is applied to the glass substrate by the lower junction plate machine 500, it may be distributed substantially uniformly over the entire surface of the substrate and may be in the range of about 1750 volts DC.

Among the materials that can be used to implement the heat dissipation plate 510, electrically conductive graphite such as THERMAFOIL is preferred. Terminal 553 allows electrical contact from the high voltage power source (not shown) to the heat sink 510. The control unit may be operable to program the voltage level from the high voltage power source to reach a predetermined voltage (such as 1750 volts DC).

Reference is also made to FIG. 19, which also shows the structural and functional aspects of the lower junction plate machine 500. As shown, the lower junction plate machine 500 may have an opening 550 to allow access to the glass substrate during the bonding process, for example to impart preload pressure and / or seed voltage to the substrate. ) May be optionally included. It is noted that this optional feature requirement is not used, but can provide advantageous operation as described below. When the opening 550 is used, its preferred use is to allow a preload voltage and / or seed voltage to be applied to the glass substrate prior to the application of the junction voltage and total junction pressure. As described above for the upper junction plate machine 400, the preload pressure and seed voltage are for initiating an anodic junction at the local region of the interface between the silicon donor wafer and the glass substrate prior to application of the junction voltage. This facilitates anode bonding over virtually the entire area of the interface. The seed voltage may be the same or different magnitude depending on the junction voltage, but the lower or the same voltage is considered to be high, for example about 750-1000 volts DC.

For example, the preload plunger 570 can be used to achieve the pre-charge function described above. The preload plunger 570 may be present in substantially the same configuration as the preload plunger 470 described with respect to FIGS. 12A-12B. The preload plunger 570 is operable to engage the lower junction plate machine 500 and extends through its opening 550 in electrical and mechanical communication with the glass substrate. An electrode 584 of the preload plunger 570 at least engages the glass substrate for imparting the seed voltage. The plunger of the preload plunger 570 is disposed coaxially with respect to the electrode 584 and can only apply the preload pressure (or in communication with the electrode 584).

The lower junction plate mechanism 500 allows it to thermally engage the heater disk 508 and provide a temperature feedback signal to the control device (allowing precise temperature control of the heater disk 508 and the glass substrate). One or more openings may also be included to allow insertion of a thermocouple through the assembly. The structure and position of the thermocouple opening (s) (and the thermocouple itself) is substantially the same as described above for the upper junction plate mechanical device 400.

20-21 are also numbered, which further illustrates an alternative function that may be used in one or more embodiments of the lower junction plate mechanism. 20 is a cross-sectional view of the lower junction plate machine 500A using active cooling features. FIG. 21 is an exploded view of the lower joining plate mechanical apparatus 500A of FIG. 20. In this embodiment, the insulator 504A of the lower junction plate mechanism 500A provides for one or more cooling channels 520 through which cooling fluid can flow when it is desired to reduce the temperature of the SOG structure, especially its glass substrate. Include. For example, the cooling channel 520 may extend helically from the center of the insulator 504A toward its peripheral edge. The channel (s) 520 may be machined to the surface of the insulator 504A. Inlet tube 522 is operable to introduce cooling fluid into the channel 520, while outlet tube 524 is operable to remove the cooling fluid from the channel 520. A heat exchanger (not shown) may be used to cool the cooling fluid before reintroducing the cooling fluid into the inlet 522. Active cooling can be achieved by controlling the temperature and flow rate of the cooling fluid through the channel 520 using the control unit. As shown in FIG. 13, a suitable fluid coupling 560 may be connected to the inlet 522 and the outlet 524 to allow connection of a fluid source (not shown) to the lower junction plate mechanism 500. Can be connected.

Referring to FIG. 22, the bonding apparatus 10 may be placed in an atmospheric chamber that provides control of a vacuum, an atmospheric state of a bonding environment, such as a gaseous state (such as hydrogen, nitrogen, and the like), and other states. have. In particular, the bonding apparatus 10 may comprise a non-vacuum state (eg, one or more oxidants), without degradation of its various components, in particular the bonding plate machinery 400, 500. In the standby state).

More details of the operation of the bonding apparatus 10 will now be described with reference to FIGS. 23-27. FIG. 23 shows the final SOG structure 600, while FIGS. 24-27 show its intermediate structures created using one or more embodiments of the bonding device 10. Referring to FIG. 24, prior to introducing material into the bonding apparatus 10, a relatively flat and uniform injection surface 621 suitable for bonding to the glass or glass-ceramic substrate 602 (FIG. 23) is provided. The injection surface 621 of the donor semiconductor wafer 620 is prepared by polishing, cleaning, or the like to produce it. For purposes of illustration, the semiconductor wafer 620 may be a substantially single crystal Si wafer, and any other suitable semiconductor conductor material may be used as described above.

The exfoliation layer 622 is created by providing the implantation surface 621 in an ion implantation process to create a weak area of the exfoliation layer 622 below the implantation surface 621 of the donor semiconductor wafer 620. The release layer 622 is defined. For example, the implantation surface 621 may be provided for hydrogen ion implantation, or other lean rare earth ions such as boron, helium, and the like. The donor semiconductor wafer 620 may be processed, for example, to reduce the hydrogen ion concentration on the implantation surface 621. For example, the donor semiconductor wafer 620 may be washed and cleaned and the implanted donor surface 621 of the exfoliation layer 622 may be provided to be weakly oxidized. The weak oxidation treatment agent may include an oxygen plasma treatment agent, an ozone treatment agent, hydrogen peroxide, hydrogen peroxide and ammonia, a treatment agent having hydrogen peroxide and an acid, or a combination of these processes. During this treatment, hydrogen termiated surface groups oxidize to hydroxyl groups, which in turn also make the surface of the silicon wafer hydrophilic. The treatment may be carried out at room temperature for the oxygen plasma and at temperatures between 25-150 ° C. for ammonia or acidic treatment agents. Proper surface cleaning of the glass substrate 602 (and the release layer 622) may be performed.

The donor semiconductor wafer 620 and the glass substrate 602 are inserted into the bonding apparatus 10, assuming that the bonding apparatus 10 is in the initial direction by rotating the upper bonding plate machinery 400 upward. do. In this example, the glass substrate 602 is fixedly placed down through gravity into the lower junction plate machine 500 and the donor semiconductor wafer 620 is disposed on top of the glass substrate 602. When application of preload pressure and seed voltage is required to start bonding in the central region of the donor semiconductor wafer 620 and the glass substrate 602, the donor semiconductor wafer 620 is placed on top of the glass substrate 602. The spacer machine device 300 may be activated before being placed in. As illustrated in FIGS. 6 and 14, the sppper motor 144 can rotate the gear 142 such that the rotary ring 304 rotates relative to the mount ring 302, thereby the glass substrate. The shim 330 is driven to cover the periphery of 602. The donor semiconductor wafer 620 may then be disposed on top of the shim such that the shim 330 is inserted between the donor semiconductor wafer 620 and the glass substrate 602. Thus, the donor semiconductor wafer 620 and the glass substrate 602 may be spaced apart from each other by the thickness of the shim 330.

Next, the lower joining plate mechanism 400 is operated to rotate down (via the opening and closing mechanism 200) such that the upper and lower joining plate machinery 400, 500 are spaced apart in a parallel direction. It is possible. More specifically, as described above with reference to FIG. 7, the jack 230 is operated through operation of the shaft 236, which is the shaft 232, the guide bushing 214, and the hinge plate 250. Results in lowering. The lowering of the hinge plate 250 causes the mount plate 208 and the upper junction plate mechanism 400 to be lowered until the mount plate 208 engages the stop 259 of the hinge plate 250. The mount plate 208 is pivoted relative to the pivot fitting 258 to tilt. At this point, the upper joining plate machinery 400 is in a direction substantially parallel to the lower joining plate machinery 500. The continuous downward motion of the hinge plate 250 engages the locks that engage the ends 114A, 116A, 118A of the guide posts 114, 116, 118 of the lift and crimp mechanism 100 (FIG. 6). 246). The operator can then engage the lock 246 with the guide posts 114, 116, 118 of the lift and compression mechanism 100. The lock 246 is pressured upward on the donor semiconductor wafer 620 and the upper junction plate mechanical device 400 without exposing the lift and compaction device 100 to an excessive force on the mount plate 208. Can be countered by

The lift and crimp mechanism 10 is then inaccurate of the lower junction plate mechanism 500 (and the glass substrate 602 and donor semiconductor wafer 620) towards the upper junction plate mechanism 400. One batch can be given. As the electrode 484 of the preload plunger 470 extends below the heat sink 410 of the upper junction plate mechanism 400, the lift and compression mechanism 100 causes the upper junction plate mechanism When incorrectly placing the lower junction plate machine 500 towards 400 connects it to the donor semiconductor wafer 620. Since the shim 330 of the spacer mechanism 300 prevents the donor semiconductor wafer 620 and the glass substrate 602 from touching each other, the preload plunger 470 has a central portion thereof. Attempts to bend the donor semiconductor wafer 620 to contact 602. Accordingly, the application of the preload pressure and the seed voltage may start the anodic bonding of the donor semiconductor wafer 620 and the glass substrate 602 before the entire pressure, temperature, and voltage are applied.

Following initial bonding of the central portion of the donor semiconductor wafer 620 and the glass substrate 602, the spacer machine 300 may be performed to remove the shim 330. The control unit may perform the stepper motor 144 to rotate the gear 142 so that the rotary ring 304 rotates with respect to the mount ring 302, thereby and the donor semiconductor wafer 620 The force 330 is subtracted from between the glass substrates 602. The shim 330 moves in a symmetrical motion, preventing any non-uniform frictional loads, such as between the donor semiconductor wafer 620 and the glass substrate 602. Advantageously, when the bonding process takes place in a vacuum, the joining of the donor semiconductor wafer 620 and the central portion of the glass substrate 602 which follow by pulling the shim 330 is performed by the donor semiconductor wafer 620. And allow any gas to escape from between and the glass substrate 602. Thus, the possibility of a gas (eg, air) that prevents proper bonding between the donor semiconductor wafer 620 and the glass substrate 602 can be reduced.

Referring to FIG. 25, the glass substrate 602 brings the glass substrate and the donor semiconductor wafer 620 to a direct connection and uses them at the temperature, voltage and pressure using the bonding apparatus 10 as described above. By providing it can be bonded to the release layer 622 using the anode (electrolyte) process. The bonding apparatus 10 may operate under the control of a computer program (executed on the processor of the control unit) to achieve a predetermined anodic bonding. Thus, the computer program can expect that the various mechanical devices of the bonding device 10 will operate in the manner described herein to achieve the anodic bonding.

The thin film layer 622 of the donor semiconductor wafer 620 and the glass substrate 602 are heated under different temperature gradients. The glass substrate 602 may be heated to a higher temperature (via the lower junction plate machine 500) than the donor semiconductor wafer 620 and release layer 622. For example, the temperature difference between the glass substrate 602 and the donor semiconductor wafer 620 (and the release layer 622) may be about 6 ° C to about 200 ° C or between or more. This differential temperature facilitates the separation of the exfoliation layer 622 from the semiconductor wafer 620 due to thermal stresses later, so that the donor semiconductor (such as coincides with the coefficient of thermal expansion (CTE) of silicon) It is preferred for glass having a coefficient of thermal expansion (CTE) that matches that of the wafer 620. The glass substrate 602 and the donor semiconductor wafer 620 are received at a temperature within about +/− 650 ° C. of the strain point of the glass substrate 602.

Mechanical pressure is also applied to the intermediate assembly. The pressure range can be between about 1 to 100 pounds per square inch (psi), between about 6 to 50 psi, or about 20 psi. It is possible to apply a better pressure, for example a pressure of 100 psi or more, but such pressure should be used with caution as it may lead to the destruction of the glass substrate 602. As described above with reference to FIGS. 4A, 4B, and 6, the donor semiconductor wafer 620 and the glass substrate 602 may be in contact with each other under the controlled operation of the lift and crimp mechanism 100. The second actuator 106 of the lift and squeeze machine 100 is lowered to a position such that controlled heating and pressure between the donor semiconductor wafer 620 and the glass substrate 602 can be achieved. Mount 108, lower junction plate machine 500, and glass substrate 602.

A voltage is also applied across the intermediate assembly, for example with the donor semiconductor wafer 620 at a positive potential and the glass substrate 602 at a lower potential. The application of the potential causes alkali or alkaline earth ions in the glass substrate 602 to move further away from the semiconductor / glass interface to the glass substrate 602. This results in (i) an alkali or alkaline earth ion free interface being produced, and (ii) the glass substrate 602 being highly reactive and applying heating at a relatively low temperature to allow the release layer of the donor semiconductor wafer 620 ( 622 to achieve two functions that are strongly bonded.

Pressure, differential temperature, and differential voltage are applied for a controlled time period (eg, approximately 6 hours or less). Accordingly, a high level of potential is brought to zero and the donor semiconductor wafer 620 and the glass substrate 602 are cooled to at least begin separation of the exfoliation layer 622 from the donor semiconductor wafer 620. Is allowed. The cooling process may involve active cooling, whereby cooling fluid is introduced into one or both of the upper and lower bonding plate machinery 400, 500. In one or more embodiments, the active cooling profile may affect the donor semiconductor wafer 620 and the glass substrate in various profiles (eg, cooling rate, rest and / or level) to affect the degree and quality of the stripping process. May involve cooling of 602.

As shown in FIG. 26, the resulting structure after separation may include the glass substrate 602 and the release layer 622 bonded to it. To access this structure, the lock 246 is released from the guide posts 114, 116, 118 and the jack 230 is operated (eg, by applying rotational force to the shaft 236). The shaft 232 raises the guide bushing 214 and the hinge plate 250 is perpendicular to the mount plate 208 by the block 260 and the pivot joint 258 (FIGS. 6-7). Is applied. The upper joining plate machinery 400 therefore rises vertically away from the lower joining plate machinery 500 while maintaining correlation substantially parallel thereto. Continuous lifting force on the mount plate 208 causes the upper junction plate mechanism 400 to tilt upward in response to a rotational movement relative to the pivot joint 258. The intermediate structure of the SOG can then be extracted from the bonding apparatus 10.

Any unwanted or rough semiconductor material may be thinned and / or polished, such as CMP or known in the art, to obtain the semiconductor layer 604 on the glass substrate 602 as shown in FIG. 27. Other techniques may be removed from the surface 623.

It is noted that the donor semiconductor wafer 620 can be reused to continue with other SOG structures 600.

According to one or more embodiments of the present invention, the bonding apparatus 10 can also be used to engrave micro-structures on substrates such as glass, glass ceramics, ceramics and the like. Conventional methods for the creation of replicated patterns on substrates such as glass use additional processes (e.g., using UV curved polymers) or omission processes (e.g., chemical etching, reactive ion etching). did. Such conventional methods are undesirable for every application; Indeed, polymer structures are very versatile but may not have desirable material properties, and etching methods may produce good structures but are often very slow and expensive. However, in accordance with one or more aspects of the present invention, a pattern is stamped / engraved from the two masters to the substrate via heating. The master tool is constructed from a material that is substantially solid and has a melting point above the melting point of the substrate. The tool and / or substrate is heated to the level (s) through which the substrate flows into the micro-structure of the tool. As a result, the components are cooled and separated.

In one or more embodiments, the bonding apparatus 10 may be adapted to rapidly heat tools and / or substrates (eg, glass) that allow high workloads. The aforementioned active cooling features, controlled compression features, vacuum conditions, and the like of the bonding apparatus 10 may also increase the amount of work.

Referring to FIG. 28, the bonding apparatus 10 may be operated to receive a tool 700 having a micro-structure 701 (eg, on a nanometer scale) disposed on at least one surface thereof. The micro-structure on the tool 700 is the inverse of what one wants to be engraved on the substrate 702. For example, the tool 700 may be coupled to the lower junction plate machine 500 and the substrate 702 (eg, glass substrate) may be disposed on top of the tool 700. Alternatively, the substrate 702 may be coupled to the lower junction plate machine 500 and the tool may be disposed on top of the substrate 702. In a further alternative embodiment, the tool 700 may be clipped to or otherwise fastened to the lower joining plate mechanism 400. Each GRAFOIL gasket 704A, 704B may be sandwiched between the top / bottom bond plate mechanism 400, 500 and the substrate 702 / tool 700.

The bonding apparatus 10 can then be closed (as described above) and attain a temperature of at least Tg of the glass substrate 702. The pattern or structure is thus transferred from the tool 700 to the glass substrate 702. The replication process can be performed under high pressure from the control pressure characteristics of the bonding apparatus 10 such as the room described above. Alternatively, gravity and atmospheric pressure may be used to facilitate the flow of the glass substrate 702 into the micro-structure 710 of the tool 700.

The tool 700 may be constructed of a material that will not structurally change at or above the flow temperature of the substrate 702, such as the Tg of the glass substrate. For example, mixed silica can be used to implement the tool 700. The microstructure 701 may be formed in the tool 700 by reactive ion etching (RID). Surface treatment of the tool 700 and / or substrate 702 may be used, such as a diamond coating.

Although the present invention has been described herein with reference to specific embodiments, it can be seen that these embodiments merely represent the principles and applications of the present invention. Accordingly, it will be appreciated that numerous modifications may be made to representative embodiments and that other devices may be devised without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (42)

A first bond plate mechanical device operable to engage the first sheet of material and to provide at least one of controlled heating, voltage and cooling; A second bonding plate mechanical device operable to engage the second sheet of material and to provide at least one of controlled heating, voltage and cooling; To achieve a controlled pressure of the first and second sheet of material opposing one another along each surface of each of the first and second joining plate machinery and operatively coupled to the first and second joining plate machinery. A pressure mechanism operable to tighten the first and second joining plate machinery towards each other for And To generate control signals for the first and second bond plate mechanisms and the pressure mechanism to provide sufficient heating, voltage, and pressure profiles to achieve an anodic bonding between the first and second material sheets. And a control unit operable. The anode bonding apparatus according to claim 1, wherein the first material sheet is at least one of a glass substrate and a glass ceramic substrate, and the second material sheet is a donor semiconductor wafer. The anode bonding apparatus of claim 1, wherein the heating profile comprises at least a peak temperature of at least one of the first and second sheet of material greater than 600 ° C. The anode bonding apparatus of claim 1, wherein the heating profile comprises at least a peak temperature of at least one of the first and second sheet of material between 600 ° C and 1000 ° C. The anode bonding apparatus of claim 1, wherein the heating profile comprises at least a peak temperature of at least one of the first and second material sheets greater than 1000 ° C. 3. The anode bonding device of claim 1, wherein the voltage profile comprises at least a peak voltage of at least one of the first and second sheet of material between 1000 volts DC and 2000 volts DC. The method of claim 6, The voltage profile comprises at least a peak voltage difference between 1000 volts DC and 2000 volts DC between the first sheet of material and the second sheet of material, One of the first and second sheet of material is a ground potential; The peak voltage difference is at least one of achieved by applying a positive potential to one of the first and second sheet of material and a negative potential to the other of the first and second sheet of material Splicing device. The anode bonding device of claim 1, wherein the voltage profile comprises at least a peak pressure between pounds per square inch (psi) and 100 psi. The anode bonding apparatus of claim 1, wherein the pressure profile comprises at least a peak voltage between the first and second sheet of material of 20 psi. The first and second materials of claim 1, wherein the control unit is sufficient to facilitate separation of the exfoliation layer from one of the first and second material sheets that have been bonded to one of the first and second material sheets. And an operable to generate a control signal for at least one of said first and second bonding plate mechanical devices to provide an active cooling profile to the sheet. The anode bonding apparatus of claim 10, wherein the cooling profile provides at least one of a varying cooling rate and a varying level of cooling for the first and second sheet of material. A first bond plate mechanical device operable to engage the first sheet of material and provide at least one of controlled heating and voltage; A second bonding plate mechanical device operable to engage the second sheet of material and provide at least one of controlled heating and voltage; And The first and second operatively coupled to the first bonding plate machinery and facing each other along respective surfaces of the respective first and second bonding plate machinery to assist in anodic bonding of the first and second sheet of material. And a lift and press mechanism operable to act on each other to tighten the first and second bond plate mechanisms to achieve a controlled pressure of the second sheet of material. The method of claim 12, The first and second joining plate mechanisms each comprise a respective bearing surface defining a bearing surface for engaging each of the first and second sheet of material; And said lift and crimp mechanism is operable to impart a controllable force on said first joining plate mechanism perpendicular to the bearing surface of said lift and crimp mechanism. 14. Anodic bonding apparatus according to claim 13, wherein the lift and crimp mechanism comprises a lower actuator operable to impart the controllable force in response to a change in fluid pressure provided to the actuator. The anode bonding apparatus according to claim 14, wherein the fluid is a gas. The apparatus of claim 13, wherein the lift and crimp machine is A first actuator function to impart coarse displacement of the first joining plate machinery to move the first joining plate machinery towards the second joining plate machinery; And And provide a second actuator function to impart a controllable force to the first bond plate mechanism. 17. The anode bonding apparatus of claim 16, wherein the lift and press mechanism comprises a piston-driven actuator operable to provide the first actuator function. 17. The anode bonding apparatus of claim 16, wherein the lift and crimp mechanism comprises a lower actuator operable to provide the second actuator function. 17. The anode bonding apparatus of claim 16, wherein the first actuator function causes initial contact between the first and second sheet of material along each surface of the first and second sheet of material. 17. The apparatus of claim 16, wherein the lift and press mechanism comprises first and second actuators operable to provide the first and second actuator functions, the first and second actuators being the first bond plate machine. A positive electrode bonding device, characterized in that arranged coaxially to the device. 21. The anode bonding apparatus of claim 20, wherein the first and second actuators are arranged such that operation of the first actuator imparts coordination of both the second actuator and the first bonding plate mechanism. 22. The anode bonding apparatus according to claim 21, wherein the operation of the second actuator does not impart any arrangement of the first actuator. A first joining plate machine device operable to engage a first sheet of material and a second joining plate machine device operable to engage a second sheet of material, wherein the first and second joining plate machines are configured as the first and second joints. First and second joining plate machinery, each of which comprises a respective bearing surface defining a bearing surface for engagement of the sheet of material; And Operatively coupled to the second joining plate mechanical device, (i) when in the closed state help to achieve a controlled pressure of the first and second sheet of material opposite each other along each surface of the first and second bonding plate machinery; (ii) to provide a dual action open profile, wherein a first operation is performed from the first joining plate machine device from the first joining plate machine device in a direction perpendicular to each bearing surface of the first and second joining plate machine devices. Separating the device, and the second operation is to tilt the second joining plate mechanism away from the first joining plate mechanism such that the second joining plate mechanism is inclined to the bearing surface of the first joining plate machinery. Anode bonding device comprising a switchgear mechanism capable of opening and closing. 24. The anode bonding apparatus of claim 23, wherein bearing surfaces of the first and second joining plate machinery are present in parallel during all first opening operations of the second joining plate machinery. The method of claim 23, wherein the opening and closing mechanism, A lift assembly operable to extend and fold in a direction perpendicular to a bearing surface of the first joining plate machinery; And A mount plate having first and second ends, wherein the second joining plate mechanism is disposed toward the first end of the mount plate and pivotally coupled to the lift assembly at a piston medium to the first and second ends. Anode bonding apparatus comprising a mount plate. The method of claim 25, The opening and closing mechanism includes one or more stop arms extending in a direction parallel to the lift assembly slidably engaged at the first end of the mount plate with the second end of the mount plate; ; The stop arm provides a limited travel distance during the first operation such that the second joining plate mechanism separates away from the first joining plate mechanism in a direction perpendicular to each bearing surface of the first and second plate mechanisms. Extending to permit movement of the second end of the mount plate. 27. The system of claim 26, wherein the one or more stop arms are adapted to extend the first of the mount plate of the limited travel distance such that continued extension of the lift assembly creates a lever action at the second end of the mount plate. Anode bonding apparatus, characterized in that it is operable to prohibit movement of two ends. 28. The anode bonding apparatus of claim 27, wherein the lever action at the second end of the mount plate tilts the second bonding plate mechanism away from the first bonding plate mechanism. 28. The assembly of claim 27 wherein the retraction of the lift assembly from the open state of the first and second joining plate mechanisms is directed toward the first joining plate mechanism via a lever action at the second end of the mount plate. Inclining the second joining plate machine. 30. The method of claim 29, wherein the folding of the lift assembly causes the first joining plate machinery to be separated from the first joining plate machinery in a direction perpendicular to each bearing surface of the first and second joining plate machinery. And the second end of the mount plate is operable to reach limited travel movement with continued folding of the lift assembly. A first bond plate mechanical device operable to engage the first sheet of material and to provide at least one of controlled heating, voltage and cooling; A second bonding plate mechanical device operable to engage the second sheet of material and to provide at least one of controlled heating, voltage and cooling; And Shim assembly between the first and second sheet of material toward the first and second sheet of material coupled to the first bonding plate mechanism and such that peripheral edges of the first and second sheet of material are not touching each other. and a spacer machine comprising a plurality of movable shim assemblies operable to move the assemblies symmetrically. 32. An anode bonding apparatus according to claim 31, wherein said first sheet of material is at least one of a glass substrate and a glass ceramic substrate, and said second sheet of material is a donor semiconductor wafer. 32. The device of claim 31, wherein the spacer mechanism is of annular structure, A mount ring fixedly coupled to the first joining plate mechanism; And A rotating ring rotatably coupled to the mount ring, The plurality of shim assemblies are slidably coupled to the mount ring such that the plurality of shim assemblies can simultaneously move in and out of the space between the first and second sheet of material in response to the fore and aft rotation of the rotatable ring. Anode bonding device. The method of claim 33, wherein The rotary ring comprises one or more cams disposed at a peripheral edge of the rotary ring; Wherein each shim assembly each includes one or more cam guides that engage the one or more cams of the rotating ring such that the shim assembly simultaneously moves in and out of the space between the first and second sheet of material when the rotating ring rotates. Anode bonding apparatus characterized in that. 35. The anode bonding apparatus of claim 34, wherein the rotating ring includes one cam slot for each shim assembly that spirals away from the center of the spacer mechanism. The method of claim 31, wherein Each of the first and second joining plate mechanisms includes respective bearing surfaces defining a bearing surface for engaging each of the first and second sheet of material, The spacer mechanism is adapted to move at least parallel to at least a bearing surface of the first bonding plate mechanism such that the shim assembly is inserted between the first and second sheet of material or moves out from between the first and second sheet of material. Anode bonding apparatus, characterized in that it is operable. 32. The anode of claim 31, wherein the spacer mechanism is operable to move the shim assembly between the first and second sheet of material to be bonded only at the central region of the first and second sheet of material. Splicing device. 38. The device of claim 37, wherein the spacer mechanism is operable to move the shim assembly out between the first and second sheets of material after bonding is achieved in the central region of the first and second sheets of material. Anode bonding device. 38. The apparatus of claim 37, further comprising at least one preload plunger having at least electrodes operable to be electrically connected to the first sheet of material extending through the opening of the first joining plate machinery. Anode bonding apparatus characterized in that. 40. The anode bonding apparatus of claim 39, wherein the preload plunger is operable to bias and move relative to the first sheet of material opposite the second material in the central region of the preload plunger. 41. The method of claim 40, wherein the preload plunger is operative to provide a seed voltage to the first sheet of material to induce bonding between the first and second sheets of material in a central region of the preload plunger. Anode bonding apparatus, characterized in that possible. A first junction plate mechanical device operable to engage the sheet of material and to provide at least one of controlled heating, voltage and cooling; A second junction plate mechanical device operable to cause the micro-structured embossing tool to engage and provide at least one of controlled heating, voltage, and cooling; Operatively coupled to the first and second bonding plate machinery and towards each other to achieve a controlled pressure of the embossing tool opposite the material sheet along each surface of the first and second bonding plate machinery. A pressure mechanism operable to tighten the first and second bond plate mechanisms;

Images