EP2013407A4 - High temperature anodic bonding apparatus - Google Patents

High temperature anodic bonding apparatus

Info

Publication number
EP2013407A4
EP2013407A4 EP07755626A EP07755626A EP2013407A4 EP 2013407 A4 EP2013407 A4 EP 2013407A4 EP 07755626 A EP07755626 A EP 07755626A EP 07755626 A EP07755626 A EP 07755626A EP 2013407 A4 EP2013407 A4 EP 2013407A4
Authority
EP
European Patent Office
Prior art keywords
high temperature
bonding apparatus
anodic bonding
temperature anodic
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07755626A
Other languages
German (de)
French (fr)
Other versions
EP2013407A2 (en
Inventor
Raymond C Cady
Iii John J Costello
Alexander Lakota
William E Lock
John C Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of EP2013407A2 publication Critical patent/EP2013407A2/en
Publication of EP2013407A4 publication Critical patent/EP2013407A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
EP07755626A 2006-04-21 2007-04-18 High temperature anodic bonding apparatus Withdrawn EP2013407A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79397606P 2006-04-21 2006-04-21
US11/417,445 US20070246450A1 (en) 2006-04-21 2006-05-03 High temperature anodic bonding apparatus
PCT/US2007/009423 WO2007127111A2 (en) 2006-04-21 2007-04-18 High temperature anodic bonding apparatus

Publications (2)

Publication Number Publication Date
EP2013407A2 EP2013407A2 (en) 2009-01-14
EP2013407A4 true EP2013407A4 (en) 2011-05-18

Family

ID=38618501

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07755626A Withdrawn EP2013407A4 (en) 2006-04-21 2007-04-18 High temperature anodic bonding apparatus

Country Status (6)

Country Link
US (1) US20070246450A1 (en)
EP (1) EP2013407A4 (en)
JP (1) JP2009534842A (en)
KR (1) KR20090018060A (en)
TW (1) TW200811992A (en)
WO (1) WO2007127111A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602007006051D1 (en) * 2006-11-30 2010-06-02 Corning Inc PRECISION GRINDING OF WORKPIECE SURFACES
US7947570B2 (en) * 2008-01-16 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and manufacturing apparatus of semiconductor substrate
JP5412731B2 (en) * 2008-02-19 2014-02-12 株式会社ニコン Heating and pressing system and cooling device
JP5386193B2 (en) * 2008-02-26 2014-01-15 株式会社半導体エネルギー研究所 Method for manufacturing SOI substrate
JP5455445B2 (en) * 2009-05-29 2014-03-26 信越化学工業株式会社 Manufacturing method of bonded wafer
US8062956B2 (en) * 2009-08-26 2011-11-22 Corning Incorporated Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process
JP4801769B2 (en) * 2009-11-30 2011-10-26 三菱重工業株式会社 Joining method, joining device control device, joining device
US8357974B2 (en) 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
US20130089968A1 (en) 2010-06-30 2013-04-11 Alex Usenko Method for finishing silicon on insulator substrates
US8557679B2 (en) 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
JP5882939B2 (en) * 2013-05-01 2016-03-09 東京エレクトロン株式会社 Joining method, joining apparatus and joining system
KR102455439B1 (en) * 2017-10-26 2022-10-14 엘지전자 주식회사 Sintering apparatus for power module
CN112216632A (en) * 2020-09-24 2021-01-12 广东海信宽带科技有限公司 LD chip eutectic welding platform
US11825568B2 (en) * 2021-04-01 2023-11-21 Whirlpool Corporation Segmented thermoresistive heating system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4219774C1 (en) * 1992-06-17 1994-01-27 Mannesmann Kienzle Gmbh Method and device for stacking substrates to be bonded together
US5472549A (en) * 1994-07-08 1995-12-05 Enclosure Technologies, Inc. Apparatus for electronically seam fusing dissimilar polymeric materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures

Also Published As

Publication number Publication date
US20070246450A1 (en) 2007-10-25
JP2009534842A (en) 2009-09-24
WO2007127111A3 (en) 2008-12-11
TW200811992A (en) 2008-03-01
KR20090018060A (en) 2009-02-19
EP2013407A2 (en) 2009-01-14
WO2007127111A2 (en) 2007-11-08

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