JP2009534820A - 大基板のレーザアニーリング用装置および大基板のレーザアニーリング方法 - Google Patents

大基板のレーザアニーリング用装置および大基板のレーザアニーリング方法 Download PDF

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JP2009534820A
JP2009534820A JP2009505824A JP2009505824A JP2009534820A JP 2009534820 A JP2009534820 A JP 2009534820A JP 2009505824 A JP2009505824 A JP 2009505824A JP 2009505824 A JP2009505824 A JP 2009505824A JP 2009534820 A JP2009534820 A JP 2009534820A
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substrate
irradiation
spread
line
section
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Inventor
エガー ラファエル
マルクツク ピオトル
サイフェルト ヴォルフガング
トリチュラー トーステン
ツェンツィンガー マルクス
アンデル ヴィリ
ヴァルター ヨーク
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カール ツァイス レーザー オプティクス ゲーエムベーハー
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0652—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2009505824A 2006-04-21 2007-03-29 大基板のレーザアニーリング用装置および大基板のレーザアニーリング方法 Withdrawn JP2009534820A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74533306P 2006-04-21 2006-04-21
PCT/EP2007/053030 WO2007122061A1 (en) 2006-04-21 2007-03-29 Apparatus for laser annealing of large substrates and method for laser annealing of large substrates

Publications (1)

Publication Number Publication Date
JP2009534820A true JP2009534820A (ja) 2009-09-24

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JP2009505824A Withdrawn JP2009534820A (ja) 2006-04-21 2007-03-29 大基板のレーザアニーリング用装置および大基板のレーザアニーリング方法

Country Status (5)

Country Link
EP (1) EP2010355A1 (ko)
JP (1) JP2009534820A (ko)
KR (2) KR20080113121A (ko)
TW (1) TW200741883A (ko)
WO (1) WO2007122061A1 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148182A1 (ja) * 2013-03-21 2014-09-25 株式会社日本製鋼所 アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置
JP2018049897A (ja) * 2016-09-21 2018-03-29 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
JP2020202388A (ja) * 2016-10-14 2020-12-17 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
JP2021077904A (ja) * 2021-01-21 2021-05-20 株式会社日本製鋼所 レーザ照射装置

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Publication number Priority date Publication date Assignee Title
DE102007057868B4 (de) 2007-11-29 2020-02-20 LIMO GmbH Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung
DE102009021251A1 (de) 2009-05-14 2010-11-18 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung von Laserstrahlung sowie Laservorrichtung mit einer derartigen Vorrichtung
DE102012012883B4 (de) * 2012-06-28 2015-11-12 Innolas Solutions Gmbh Laserbearbeitungsvorrichtung zur Laserbearbeitung eines Ausgangssubstrats für die Herstellung von Solarzellen
JP6985249B2 (ja) * 2015-07-29 2021-12-22 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 回転基板レーザアニール
CN115121940A (zh) 2016-07-27 2022-09-30 通快激光有限责任公司 激光线照射
WO2018083572A1 (ja) * 2016-11-03 2018-05-11 株式会社半導体エネルギー研究所 レーザ加工装置、積層体の加工装置およびレーザ加工方法
DE102017213168A1 (de) 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Verfahren zum Behandeln eines reflektiven optischen Elements für den EUV-Wellenlängenbereich, Verfahren zu dessen Herstellung sowie Vorrichtung zur Behandlung
DE102018115126B4 (de) 2018-06-22 2020-02-13 Trumpf Laser- Und Systemtechnik Gmbh Optische Anordnung zur Umwandlung eines Eingangslaserstahls in einen linienartigen Ausgangsstrahl sowie Lasersystem mit einer solchen optischen Anordnung

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JPH10209069A (ja) * 1997-01-17 1998-08-07 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置
KR100430231B1 (ko) * 1998-10-02 2004-07-19 엘지.필립스 엘시디 주식회사 레이저어닐장비
JP2002141301A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
JP3949564B2 (ja) * 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148182A1 (ja) * 2013-03-21 2014-09-25 株式会社日本製鋼所 アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置
JP2014187066A (ja) * 2013-03-21 2014-10-02 Japan Steel Works Ltd:The アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置
CN104508797A (zh) * 2013-03-21 2015-04-08 株式会社日本制钢所 退火处理半导体基板的制造方法、扫描装置以及激光处理装置
JP2018049897A (ja) * 2016-09-21 2018-03-29 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
JP2020202388A (ja) * 2016-10-14 2020-12-17 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
JP2021077904A (ja) * 2021-01-21 2021-05-20 株式会社日本製鋼所 レーザ照射装置
JP7159363B2 (ja) 2021-01-21 2022-10-24 Ｊｓｗアクティナシステム株式会社 レーザ照射装置

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Publication number Publication date
WO2007122061A1 (en) 2007-11-01
EP2010355A1 (en) 2009-01-07
TW200741883A (en) 2007-11-01
KR20080113077A (ko) 2008-12-26
KR20080113121A (ko) 2008-12-26

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