JP2009528969A5 - - Google Patents

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Publication number
JP2009528969A5
JP2009528969A5 JP2008552497A JP2008552497A JP2009528969A5 JP 2009528969 A5 JP2009528969 A5 JP 2009528969A5 JP 2008552497 A JP2008552497 A JP 2008552497A JP 2008552497 A JP2008552497 A JP 2008552497A JP 2009528969 A5 JP2009528969 A5 JP 2009528969A5
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catalyst
temperature
eutectic point
carbon precursor
particle size
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JP2008552497A
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Japanese (ja)
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JP2009528969A (ja
JP5550833B2 (ja
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Priority claimed from PCT/US2007/002513 external-priority patent/WO2008016388A2/en
Publication of JP2009528969A publication Critical patent/JP2009528969A/ja
Publication of JP2009528969A5 publication Critical patent/JP2009528969A5/ja
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JP2008552497A 2006-01-30 2007-01-30 高品質単層カーボンナノチューブ成長の方法および装置 Expired - Fee Related JP5550833B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76381306P 2006-01-30 2006-01-30
US60/763,813 2006-01-30
PCT/US2007/002513 WO2008016388A2 (en) 2006-01-30 2007-01-30 Method and apparatus for growth of high quality carbon single-walled nanotubes

Publications (3)

Publication Number Publication Date
JP2009528969A JP2009528969A (ja) 2009-08-13
JP2009528969A5 true JP2009528969A5 (https=) 2010-03-18
JP5550833B2 JP5550833B2 (ja) 2014-07-16

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JP2008552497A Expired - Fee Related JP5550833B2 (ja) 2006-01-30 2007-01-30 高品質単層カーボンナノチューブ成長の方法および装置

Country Status (3)

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US (1) US20080279753A1 (https=)
JP (1) JP5550833B2 (https=)
WO (1) WO2008016388A2 (https=)

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